WO2018196111A1 - Ltps阵列基板及其制作方法 - Google Patents

Ltps阵列基板及其制作方法 Download PDF

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Publication number
WO2018196111A1
WO2018196111A1 PCT/CN2017/087784 CN2017087784W WO2018196111A1 WO 2018196111 A1 WO2018196111 A1 WO 2018196111A1 CN 2017087784 W CN2017087784 W CN 2017087784W WO 2018196111 A1 WO2018196111 A1 WO 2018196111A1
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Prior art keywords
layer
pressure sensing
organic film
pressure
array substrate
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PCT/CN2017/087784
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English (en)
French (fr)
Inventor
杨成奥
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武汉华星光电技术有限公司
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Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US15/569,315 priority Critical patent/US10289231B2/en
Publication of WO2018196111A1 publication Critical patent/WO2018196111A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to an LTPS array substrate and a method for fabricating the LTPS array substrate.
  • the pressure touch technology mainly presses the touch panel according to the finger, such as a mobile phone or a tablet computer, and the surface of the touch panel is deformed, and the pressure sensor is used to sense the magnitude of the pressure change, thereby implementing the pressure touch.
  • most commonly used pressure touch screens adopt an externally-mounted solution, that is, a pressure sensor is separately prepared, and then the liquid crystal panel is attached to the pressure sensor. Because of the distance from the surface cover glass, the external pressure sensor is less sensitive.
  • the existing display panel with pressure touch function has a pressure sensor that is externally mounted, and the distance between the pressure sensor and the cover glass is relatively long, resulting in low sensitivity of the pressure touch, and the external type.
  • the pressure sensor will increase the thickness and weight of the mobile device, so a new pressure touch display panel is needed.
  • the invention provides an LTPS array substrate, which can integrate a pressure sensor in an array substrate to solve the existing pressure touch display panel, and the distance between the external pressure sensor and the cover glass is long, resulting in pressure touch.
  • the low sensitivity and the external pressure sensor add to the technical problems of the thickness and weight of the mobile device.
  • the invention provides an LTPS array substrate, comprising:
  • the pressure sensing plate being a piezoelectric material
  • the metal layer is patterned, forming a common electrode and a pressure sensing line insulated from each other, and the pressure sensing line is connected to the pressure sensing plate;
  • One side of the common electrode is provided with a plurality of notches, and each of the notches forms a pressure sensing point, and the pressure sensing points located in the same row are connected to the same pressure sensing line.
  • the metal layer includes a plurality of spaced apart common electrodes, and one of the pressure sensing lines is disposed between adjacent common electrodes, and the same end of each of the pressure sensing lines Parallel to the same signal trace.
  • a surface of the organic film layer is formed with a dielectric layer, and a touch through hole is formed on the dielectric layer.
  • a surface of the dielectric layer is formed with a planar touch signal line, and the planar touch signal line is connected to the common electrode through the touch through hole.
  • the organic film layer includes a first planarization layer and a second planarization layer formed on a surface of the first planarization layer, and the pressure sensing plate is located at the first planarization layer. Between the layer and the second planarization layer, the second planarization layer is provided with a pressure sensitive through hole, and the pressure sensing plate and the pressure sensing wire are connected through the pressure sensitive through hole.
  • the pressure sensing plate is formed on the surface of the organic film layer
  • the pressure sensing wire is formed on the surface of the pressure sensing plate
  • the pressure sensing wire is in contact connection with the pressure sensing plate.
  • the common electrode and the pressure sensing line are both transparent metal electrodes.
  • the present invention also provides another LTPS array substrate, comprising:
  • the pressure sensing plate being a piezoelectric material
  • a common electrode and a pressure sensing line are formed which are insulated from each other, and the pressure sensing line is connected to the pressure sensing plate.
  • the metal layer includes a plurality of spaced apart common electrodes, and one of the pressure sensing lines is disposed between adjacent common electrodes, and the same end of each of the pressure sensing lines Parallel to the same signal trace.
  • a surface of the organic film layer is formed with a dielectric layer, and a touch through hole is formed on the dielectric layer.
  • a surface of the dielectric layer is formed with a planar touch signal line, and the planar touch signal line is connected to the common electrode through the touch through hole.
  • the organic film layer includes a first planarization layer and a second planarization layer formed on a surface of the first planarization layer, and the pressure sensing plate is located at the first planarization layer. Between the layer and the second planarization layer, the second planarization layer is provided with a pressure sensitive through hole, and the pressure sensing plate and the pressure sensing wire are connected through the pressure sensitive through hole.
  • the pressure sensing plate is formed on the surface of the organic film layer
  • the pressure sensing wire is formed on the surface of the pressure sensing plate
  • the pressure sensing wire is in contact connection with the pressure sensing plate.
  • the common electrode and the pressure sensing line are both transparent metal electrodes.
  • the invention also provides a method for fabricating an LTPS array substrate, the manufacturing method comprising:
  • the step of forming an organic film layer on the substrate, forming a pressure sensing plate in the organic film layer, and then forming a pressure sensitive through hole on the organic film layer includes:
  • a second planarization layer is formed on the substrate, and the pressure sensitive through hole is formed on the second planarization layer.
  • the invention has the beneficial effects that the present invention provides an LTPS array substrate, which is formed in the film structure of the LTPS array substrate and closes the pressure sensor, compared to the existing display panel with pressure touch function.
  • the distance between the glass cover of the display panel and the glass touch panel of the display panel improves the pressure sensitivity of the touch panel and reduces the thickness of the display module, and the integrated pressure sensor is shared with the existing film layer process, thereby saving the panel manufacturing process;
  • Some pressure touch display panels, the distance between the external pressure sensor and the cover glass is relatively long, resulting in low sensitivity of the pressure touch, and the external pressure sensor will increase the thickness and weight of the mobile device. .
  • FIG. 1 is a cross-sectional view showing the structure of an LTPS array substrate according to an embodiment of the present invention
  • FIG. 2 is a top plan view of a pressure sensing structure of an LTPS array substrate according to an embodiment of the present invention
  • 3A to 3M are flowcharts showing a method of manufacturing an LTPS array substrate according to an embodiment of the present invention.
  • the present invention is directed to the existing pressure touch display panel, wherein the distance between the external pressure sensor and the cover glass is relatively long, resulting in low sensitivity of the pressure touch, and the external pressure sensor increases the thickness of the mobile device and The technical problem of weight, the present invention can solve the technical drawback.
  • FIG. 1 is a cross-sectional view showing the structure of an LTPS array substrate according to an embodiment of the present invention.
  • the array substrate includes a substrate 101.
  • the surface of the substrate 101 is formed with a gate insulating layer 102.
  • the surface of the gate insulating layer 102 is formed with an insulating layer 103.
  • the surface of the insulating layer 103 is organic.
  • a film layer 104, the organic film layer 104 is formed with a pressure sensing plate 105 made of a piezoelectric material, and a surface of the organic film layer 104 is formed with a metal layer, and the metal layer is patterned to form a mutual insulation.
  • the common electrode 106 is connected to the pressure sensing line 107, wherein the pressure sensing line 107 is connected to the pressure sensing plate 105.
  • the metal layer is used to form a common electrode 106, and the common electrode 106 forms a storage capacitor with the pixel electrode 108.
  • the mask is replaced in this process. The shape, without introducing additional masks and wires, is consistent with the prior art in the manufacturing process, thereby reducing the cost of process modification.
  • a dielectric layer 109 is formed on the surface of the organic film layer 104.
  • the dielectric layer 109 is, for example, a dielectric material such as nitrogen silicide or oxysilicide.
  • the dielectric layer 109 is formed with a touch through hole 110, and the surface of the dielectric layer 109 is formed.
  • a planar touch signal line 111 is formed, and a surface of the dielectric layer 109 is further formed with a passivation layer 112, and a surface of the passivation layer 112 is formed with a pixel electrode 108.
  • the planar touch signal line 111 is connected to the common electrode 106 through the touch through hole 110.
  • the common electrode 106 and the planar touch signal line 111 form a planar touch panel.
  • the common electrode 106 is further configured to form a storage capacitor with the pixel electrode 108 to pre-display the display pixel Charging.
  • a light shielding layer 113 is formed in the substrate 101, and a surface of the substrate 101 is formed with a polysilicon layer 114, the polysilicon layer 114 forms a channel region, and source doped regions located on both sides of the channel region.
  • the gate insulating layer 102 on the surface of the substrate 101, forming a gate electrode 115 on the surface of the gate insulating layer 102, and the inter-insulating layer 103, the surface of the inter-insulating layer 103 forming a source 116 and a drain 117, the source 116 is in contact connection with the source 116 doped region through a source via 120, and the drain 117 is in contact with the drain 117 doped region through a drain via 121
  • the organic film layer 104, the dielectric layer 109, and the passivation layer 112 form a pixel electrode via 118, and the pixel electrode 108 is connected to the drain 117 through the pixel electrode via 118.
  • the piezoelectric material used in the pressure sensing plate 105 refers to a crystal material which generates a voltage between both end faces when subjected to pressure.
  • the piezoelectric material may generate an electric field due to mechanical deformation, or may cause mechanical deformation due to an electric field.
  • a pressure is applied to the piezoelectric material, it generates a potential difference, that is, a positive piezoelectric effect.
  • the common electrode 106 formed by the metal layer and the pressure sensing line 107 are insulated from each other to prevent cross-piezoelectric effects of the pressure sensing plate 105 from causing crosstalk to the display screen.
  • the pressure sensing line 107 is connected to the pressure sensing plate 105.
  • the organic film layer 104 includes a first planarization layer and a second planarization layer formed on a surface of the first planarization layer, the pressure sensing plate 105 is located at the first planarization layer and the Between the second planarization layers, the second planarization layer is provided with a pressure sensitive through hole 119, and the pressure sensing plate 105 is connected to the pressure sensing line 107 through the pressure sensitive through hole 119.
  • the pressure sensing plate 105 is formed on the surface of the organic film layer 104, the pressure sensing line 107 is formed on the surface of the pressure sensing plate 105, and the pressure sensing wire 107 is in contact with the pressure sensing plate 105.
  • the pressure sensing plate 105 is closer to the protective cover of the display panel, and the pressure detection is more sensitive, which saves the process of making through holes in the manufacturing process.
  • FIG. 2 is a top plan view of a pressure sensing structure of an LTPS array substrate according to an embodiment of the present invention.
  • a metal layer is disposed on the surface of the pressure sensing plate 203, the metal layer includes a plurality of spaced apart common electrodes 201, and one of the pressure sensing lines is disposed between the adjacent common electrodes 201. 202, the same end of each of the pressure sensing lines 202 is connected in parallel to the same signal trace 205; therefore, when one or more of the pressure sensing lines 202 are disconnected, the induction of the overall pressure touch is not affected, and the increase is performed. The tolerance of the process.
  • a plurality of notches are formed on one side of the common electrode 201, and a pressure sensing point 204 is formed in each of the notches.
  • the pressure sensing points 204 in the same row are connected to the same pressure sensing line 202, one detecting line. Connecting a plurality of pressure sensing points 204 to increase the accuracy of the sensing position, and placing the pressure sensing point 204 in the common electrode 201 can save the occupied area of the metal layer on the surface of the organic film layer, thereby increasing The density of the common electrode 201 and the pressure sensing line 202 increases the touch sensitivity.
  • 3A to 3M are flowcharts showing a method of manufacturing an LTPS array substrate according to an embodiment of the present invention.
  • a substrate 301 is provided; the substrate 301 is generally selected from a transparent glass substrate 301.
  • a light shielding layer 302 is formed at a position corresponding to the thin film transistor of the substrate 301.
  • the light shielding layer 302 may be a molybdenum aluminum alloy, a chrome metal, a molybdenum metal, or other materials having both a light shielding function and an electrical conductivity. Its function is to prevent the light emitted from the backlight unit from being irradiated onto the channel layer, thus generating an extra current.
  • a buffer layer 303 is formed on the substrate 301 to cover the light shielding layer 302.
  • a polysilicon layer 304 is formed on the substrate 301, and the polysilicon layer 304 is ion-implanted to form a channel and a source-drain doped region, respectively.
  • a gate insulating layer 305 is formed on the substrate 301, and a gate electrode 306 and a scan line are formed on the gate insulating layer 305.
  • the material of the gate electrode 306 may be nitrogen silicide or oxysilicide. Dielectric materials such as materials.
  • an insulating layer 307 is formed on the substrate 301, and a source via 322 and a drain via 323 are formed on the insulating layer 307.
  • a first metal layer is deposited on the substrate 301, and a source 308 of the thin film transistor is formed on the interlayer insulating layer 307 by patterning the first metal layer.
  • a drain 309 of the thin film transistor and a data line the source 308 is connected to one side of the channel through the source via 322, and the drain 309 passes through the drain 309 The other side of the channel is connected; wherein the source 308 of the thin film transistor is connected to a corresponding data line.
  • a first planarization layer 321 is deposited on the substrate 301.
  • a pressure sensing plate 105 is formed on the substrate 301.
  • a second planarization layer 312 is formed on the substrate 301, and a pressure sensitive through hole 311 is formed on the pressure sensing plate 310.
  • a second metal layer is deposited on the substrate 301, and a common electrode 313 is formed on the second planarization layer 312 by patterning the second metal layer.
  • the pressure sensing line 314 is connected to the pressure sensing plate 310 through the pressure sensitive through hole 311.
  • a dielectric layer 315 and a planar touch signal line 316 are formed on the substrate 301, and a touch through hole is formed on the dielectric layer 315, and the planar touch signal line 316 passes through the touch.
  • a via hole is connected to the common electrode 313.
  • a passivation layer 318 and a pixel electrode 319 are formed on the substrate 301, and a pixel electrode via 320 is formed on the passivation layer 318, the dielectric layer 315, and the second planarization layer 312.
  • the pixel electrode 319 is connected to the drain 309 through the pixel electrode via 320.
  • the LTPS array substrate 301 as shown in FIG. 3M has been formed.
  • the invention has the beneficial effects that the present invention provides an LTPS array substrate 301, which is formed in the film structure of the LTPS array substrate 301, and is closer to the existing display panel with pressure touch function.
  • the distance between the pressure sensor and the glass cover of the display panel, thereby improving the pressure touch sensitivity and reducing the thickness of the display module, and the integrated pressure sensor is shared with the existing film layer process, thereby saving the panel manufacturing process;
  • the distance between the external pressure sensor and the cover glass is relatively long, resulting in low sensitivity of the pressure touch, and the external pressure sensor increases the thickness and weight of the mobile device. technical problem.

Abstract

提供了一种低温多晶硅（LTPS）阵列基板，包括：层叠设置的基板（101）、绝缘栅层（102）、间绝缘层（103）、有机膜层（104）以及压力感应板（105），压力感应板（105）形成于有机膜层（104）内；还包括金属层，形成于所述有机膜层（104）上；其中，所述金属层经图形化处理后，形成相互绝缘的公共电极（106）与压力传感线（107），所述压力传感线（107）连接所述压力感应板（105）。

Description

LTPS阵列基板及其制作方法 技术领域
本发明涉及液晶显示技术领域，尤其涉及一种LTPS阵列基板及所述LTPS阵列基板的制作方法。
 背景技术
随着智能手机的飞速发展，基本取代了传统的非智能手机，手机屏幕的尺寸也越来越大，手机的操作模式也从传统的按键操作模式向触控操作模式转变，随之而来是压力触控技术的迅速发展。
压力触控技术主要根据手指按压触控面板，如手机、平板电脑，触控面板表面会产生形变，利用压力传感器来感测压力变化量的大小，进而实现压力触控。目前常用的压力触控屏幕大多采用外挂式的方案，即单独制备压力传感器，然后将液晶面板与压力传感器进行贴合，由于距离表面盖板玻璃较远，这种外挂式的压力传感器灵敏较低，且在压力传感器制备过程中需要引入新的基板，贴合次数的增加和压力传感器中的额外的金属导线和柔性电路板都增大了面板的制造成本，此外在完成压力传感器和液晶面板的贴合后整个模组的厚度和重量都有比较大的增加，与手机和移动办公所追求的超薄化、轻量化不符，不是压力触控感应最理想的技术解决方案。
综上所述，现有的具有压力触控功能的显示面板，其压力传感器为外挂式，压力传感器与盖板玻璃之间的距离较远，导致压力触控的灵敏度较低，而且，外挂式的压力传感器会增加移动设备的厚度及重量，因此，需要提供一种新的压力触控显示面板。
 技术问题
本发明提供一种LTPS阵列基板，能够将压力传感器集成在阵列基板内，以解决现有的压力触控显示面板，外挂式的压力传感器与盖板玻璃之间的距离较远，导致压力触控的灵敏度较低，以及外挂式的压力传感器会增加移动设备的厚度及重量的技术问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种LTPS阵列基板，包括：
基板；
绝缘栅层，形成于所述基板表面；
间绝缘层，形成于所述绝缘栅层表面；
有机膜层，形成于所述间绝缘层表面，以及
压力感应板，形成于所述有机膜层，所述压力感应板为压电材料；以及
金属层，形成于所述有机膜层上；其中，
所述金属层经图形化处理后，形成相互绝缘的公共电极与压力传感线，所述压力传感线连接所述压力感应板；
所述公共电极一侧开设有若干缺口，每一所述缺口内形成一压力感应点，位于同一行的所述压力感应点连接同一条所述压力传感线。
根据本发明一优选实施例，所述金属层包括若干间隔分布的所述公共电极，相邻所述公共电极之间设置有一条所述压力传感线，各所述压力传感线的同一端并联于同一条信号走线。
根据本发明一优选实施例，所述有机膜层表面形成介质层，所述介质层上形成有触控通孔。
根据本发明一优选实施例，所述介质层表面形成有平面触控信号线，所述平面触控信号线通过所述触控通孔连接所述公共电极。
根据本发明一优选实施例，所述有机膜层包括第一平坦化层、及形成于所述第一平坦化层表面的第二平坦化层，所述压力感应板位于所述第一平坦化层与所述第二平坦化层之间，所述第二平坦化层开设有压感通孔，所述压力感应板与所述压力传感线通过所述压感通孔连接。
根据本发明一优选实施例，所述压力感应板形成于所述有机膜层表面，所述压力传感线形成于所述压力感应板表面，所述压力传感线与压力感应板接触连接。
根据本发明一优选实施例，所述公共电极与所述压力传感线均为透明金属电极。
本发明还提供另一种LTPS阵列基板，包括：
基板；
绝缘栅层，形成于所述基板表面；
间绝缘层，形成于所述绝缘栅层表面；
有机膜层，形成于所述间绝缘层表面，以及
压力感应板，形成于所述有机膜层，所述压力感应板为压电材料；以及
金属层，形成于所述有机膜层上；其中，
所述金属层经图形化处理后，形成相互绝缘的公共电极与压力传感线，所述压力传感线连接所述压力感应板。
根据本发明一优选实施例，所述金属层包括若干间隔分布的所述公共电极，相邻所述公共电极之间设置有一条所述压力传感线，各所述压力传感线的同一端并联于同一条信号走线。
根据本发明一优选实施例，所述有机膜层表面形成介质层，所述介质层上形成有触控通孔。
根据本发明一优选实施例，所述介质层表面形成有平面触控信号线，所述平面触控信号线通过所述触控通孔连接所述公共电极。
根据本发明一优选实施例，所述有机膜层包括第一平坦化层、及形成于所述第一平坦化层表面的第二平坦化层，所述压力感应板位于所述第一平坦化层与所述第二平坦化层之间，所述第二平坦化层开设有压感通孔，所述压力感应板与所述压力传感线通过所述压感通孔连接。
根据本发明一优选实施例，所述压力感应板形成于所述有机膜层表面，所述压力传感线形成于所述压力感应板表面，所述压力传感线与压力感应板接触连接。
根据本发明一优选实施例，所述公共电极与所述压力传感线均为透明金属电极。
本发明还提供一种LTPS阵列基板制作方法，所述制作方法包括：
提供一基板；
在所述基板上制作缓冲层；
在所述基板上制作薄膜晶体管的沟道；
在所述基板上制作栅绝缘层、栅极以及扫描线，其中所述栅极与对应的扫描线连接；
在所述基板上制作间绝缘层，并在所述间绝缘层上形成源极通孔与漏极通孔；
在所述基板上沉积第一金属层，并通过对所述第一金属层进行图形化处理，在所述间绝缘层上形成所述薄膜晶体管的源极、所述薄膜晶体管的漏极、以及数据线；所述源极通过所述源极通孔与所述沟道的一侧连接，所述漏极通过所述漏极通过与所述沟道的另一侧连接；其中所述薄膜晶体管的源极与对应的数据线连接；
在所述基板上制作有机膜层，并在所述有机膜层内形成压力感应板，然后在所述有机膜层上形成压感通孔；
在所述有基板上沉积第二金属层，并通过对所述第二金属层进行图形化处理，在所述有机膜层上形成相互绝缘的公共电极与压力传感线；所述压力传感线通过所述压感通孔与所述压力感应板连接；
在所述基板上制作介质层以及平面触控信号线，并在所述介质层上形成触控通孔，所述平面触控信号线通过所述触控通孔与所述公共电极相连接；以及
在所述基板上制作钝化层以及像素电极，并在所述钝化层、介质层以及所述有机膜层上形成像素电极通孔，所述像素电极通过所述像素电极通孔与所述漏极连接。
根据本发明一优选实施例，所述在所述基板上制作有机膜层，并在所述有机膜层内形成压力感应板，然后在所述有机膜层上形成压感通孔的步骤包括：
在所述基板上制作第一平坦化层，并在所述第一平坦化层上制作所述压力感应板；
在所述基板上制作第二平坦化层，并在所述第二平坦化层上形成所述压感通孔。
 有益效果
本发明的有益效果为：相较于现有的具有压力触控功能的显示面板，本发明提供一种LTPS阵列基板，将压力传感器制作在LTPS阵列基板的膜层结构中，拉近了压力传感器与显示面板的玻璃盖板间距离，进而提高压力触控灵敏度，同时降低了显示模组的厚度，并且，集成的压力传感器与现有的膜层制程共用，节省了面板制作工序；解决了现有的压力触控显示面板，外挂式的压力传感器与盖板玻璃之间的距离较远，导致压力触控的灵敏度较低，以及外挂式的压力传感器会增加移动设备的厚度及重量的技术问题。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例的LTPS阵列基板结构剖视图；
图2为本发明实施例的LTPS阵列基板压力感应结构俯视图；
图3A至图3M为本发明实施例的LTPS阵列基板的制造方法流程图。
本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的压力触控显示面板，外挂式的压力传感器与盖板玻璃之间的距离较远，导致压力触控的灵敏度较低，以及外挂式的压力传感器会增加移动设备的厚度及重量的技术问题，本发明能够解决该技术缺陷。
图1为本发明实施例的LTPS阵列基板结构剖视图。
如图1所示，所述阵列基板包括有基板101，所述基板101表面形成有栅绝缘层102，所栅绝缘层102表面形成有间绝缘层103，所述间绝缘层103表面形成有有机膜层104，所述有机膜层104形成有由压电材料制备而成的压力感应板105，所述有机膜层104表面形成有金属层，所述金属层通过图形化处理，形成相互绝缘的公共电极106与压力传感线107，其中所述压力传感线107连接所述压力感应板105。
在现有的LTPS阵列基板101制程中，所述金属层用于图形化为公共电极106，所述公共电极106与像素电极108形成存储电容，而本发明，在此工序中仅更换了光罩形状，没有引入额外的光罩和导线，在制程工序上与现有技术保持一致，从而降低了制程改造成本。
所述有机膜层104表面形成有介质层109，介质层109例如为氮硅化物、氧硅化物等介电材料；所述介质层109上形成有触控通孔110，所述介质层109表面形成有平面触控信号线111，所述介质层109表面还形成有钝化层112，所述钝化层112表面形成有像素电极108。
所述平面触控信号线111通过所述触控通孔110连接所述公共电极106，所述公共电极106与所述平面触控信号线111形成平面触控板，当手指触摸面板时，通过检测所述公共电极106的电容值的变化，可获得触控点的平面位置进而实现平面触控；所述公共电极106还用作与所述像素电极108形成存储电容，以对显示像素进行预充电。
具体的，所述基板101内形成有遮光层113，所述基板101表面形成有多晶硅层114，所述多晶硅层114形成沟道区、及位于所述沟道区两侧的源极掺杂区与漏极掺杂区，所述基板101表面形成所述栅绝缘层102，所述栅绝缘层102表面形成栅极115、以及所述间绝缘层103，所述间绝缘层103表面形成源极116与漏极117，所述源极116通过源极通孔120与所述源极116掺杂区接触连接，所述漏极117通过漏极通孔121与所述漏极117掺杂区接触连接，所述有机膜层104、介质层109以及钝化层112形成像素电极通孔118，所述像素电极108通过像素电极通孔118连接所述漏极117。
所述压力感应板105所使用的压电材料，是指受到压力作用时会在两端面间出现电压的晶体材料，压电材料可以因机械变形产生电场，也可以因电场作用产生机械变形，如果对压电材料施加压力，它便会产生电位差，即正压电效应，反之，施加电压则产生机械应力，即称为逆压电效应；当手指按压在显示器的外保护玻璃时，显示面板发生形变，所述压力感应板105随之产生形变，即在受力的方向上产生电信号，通过手指接触面板位置相对应的压力感应点，将检测到的电流通过所述压力传感线107输入至IC驱动，进而使得面板的相应位置执行相应的功能反馈。
所述金属层所形成的公共电极106与压力传感线107相互绝缘，以避免所述压力感应板105的逆压电效应对显示画面产生串扰。
所述压力传感线107连接所述压力感应板105。
例如，所述有机膜层104包括第一平坦化层、及形成于所述第一平坦化层表面的第二平坦化层，所述压力感应板105位于所述第一平坦化层与所述第二平坦化层之间，所述第二平坦化层开设有压感通孔119，所述压力感应板105与所述压力传感线107通过所述压感通孔119连接。
又如，所述压力感应板105形成于所述有机膜层104表面，所述压力传感线107形成于所述压力感应板105表面，所述压力传感线107与压力感应板105接触连接，此方案中，所述压力感应板105距离显示面板的保护盖板较近，压力检测更加灵敏，在制作工艺上节省了制作通孔的工序。
图2为本发明实施例的LTPS阵列基板压力感应结构俯视图。
如图2所示，在压力感应板203表面设置有金属层，所述金属层包括若干间隔分布的所述公共电极201，相邻所述公共电极201之间设置有一条所述压力传感线202，各所述压力传感线202的同一端并联于同一条信号走线205；因此，当有一条或多条压力传感线202断路时，不会影响整体压力触控的感应，增大了制程的容差。
所述公共电极201一侧开设有若干缺口，每一所述缺口内形成一压力感应点204，位于同一行的所述压力感应点204连接同一条所述压力传感线202，一条检测线上连接多个压力感应点204，以增大感应位置的精度，而且，将所述压力感应点204置于所述公共电极201内，可节省金属层在有机膜层表面的占用面积，进而增大公共电极201与压力传感线202的设置密度，提高触控灵敏度。
图3A至图3M为本发明实施例的LTPS阵列基板的制造方法流程图。
如图3A所示，提供一基板301；所述基板301通常选用透明玻璃基板301。
如图3B所示，在所述基板301对应薄膜晶体管的位置制作遮光层302；所述遮光层302可以为钼铝合金、铬金属、钼金属或者其它既具有遮光功能又具有导电性能的材料，其作用是为了防止背光单元发射出的光照射到沟道层上，因此而产生额外的电流。
如图3C所示，在所述基板301上形成缓冲层303，以覆盖所述遮光层302。
如图3D所示，在所述基板301上形成多晶硅层304，并对所述多晶硅层304进行离子注入，分别形成沟道及源漏极掺杂区域。
如图3E所示，在所述基板301上形成栅绝缘层305，并在所述栅绝缘层305上形成栅极306以及扫描线，所述栅极306的材质可以为氮硅化物、氧硅化物等介电材质。
如图3F所示，在所述基板301上制作间绝缘层307，并在所述间绝缘层307上形成源极通孔322与漏极通孔323。
如图3G所示，在所述基板301上沉积第一金属层，并通过对所述第一金属层进行图形化处理，在所述间绝缘层307上形成所述薄膜晶体管的源极308、所述薄膜晶体管的漏极309、以及数据线；所述源极308通过所述源极通孔322与所述沟道的一侧连接，所述漏极309通过所述漏极309通过与所述沟道的另一侧连接；其中所述薄膜晶体管的源极308与对应的数据线连接。
如图3H所示，在所述基板301上沉积第一平坦化层321。
如图3I所示，在所述基板301上制作压力感应板105。
如图3J所示，在所述基板301上制作第二平坦化层312，并在所述压力感应板310上形成压感通孔311。
如图3K所示，在所述基板301上沉积第二金属层，并通过对所述第二金属层进行图形化处理，在所述第二平坦化层312上形成相互绝缘的公共电极313与压力传感线314；所述压力传感线314通过所述压感通孔311与所述压力感应板310连接。
如图3L所示，在所述基板301上制作介质层315以及平面触控信号线316，并在所述介质层315上形成触控通孔，所述平面触控信号线316通过所述触控通孔与所述公共电极313相连接。
如图3M所示，在所述基板301上制作钝化层318以及像素电极319，并在所述钝化层318、介质层315以及所述第二平坦化层312上形成像素电极通孔320，所述像素电极319通过所述像素电极通孔320与所述漏极309连接。
至此，形成了如图3M所示的LTPS阵列基板301。
本发明的有益效果为：相较于现有的具有压力触控功能的显示面板，本发明提供一种LTPS阵列基板301，将压力传感器制作在LTPS阵列基板301的膜层结构中，拉近了压力传感器与显示面板的玻璃盖板间距离，进而提高压力触控灵敏度，同时降低了显示模组的厚度，并且，集成的压力传感器与现有的膜层制程共用，节省了面板制作工序；解决了现有的压力触控显示面板，外挂式的压力传感器与盖板玻璃之间的距离较远，导致压力触控的灵敏度较低，以及外挂式的压力传感器会增加移动设备的厚度及重量的技术问题。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (16)

  1. 一种LTPS阵列基板，其包括：
    基板；
    绝缘栅层，形成于所述基板表面；
    间绝缘层，形成于所述绝缘栅层表面；
    有机膜层，形成于所述间绝缘层表面，以及
    压力感应板，形成于所述有机膜层，所述压力感应板为压电材料；以及
    金属层，形成于所述有机膜层上；其中，
    所述金属层经图形化处理后，形成相互绝缘的公共电极与压力传感线，所述压力传感线连接所述压力感应板；
    所述公共电极一侧开设有若干缺口，每一所述缺口内形成一压力感应点，位于同一行的所述压力感应点连接同一条所述压力传感线。
  2. 根据权利要求1所述的LTPS阵列基板，其中，所述金属层包括若干间隔分布的所述公共电极，相邻所述公共电极之间设置有一条所述压力传感线，各所述压力传感线的同一端并联于同一条信号走线。
  3. 根据权利要求1所述的LTPS阵列基板，其中，所述有机膜层表面形成介质层，所述介质层上形成有触控通孔。
  4. 根据权利要求3所述的LTPS阵列基板，其中，所述介质层表面形成有平面触控信号线，所述平面触控信号线通过所述触控通孔连接所述公共电极。
  5. 根据权利要求1所述的LTPS阵列基板，其中，所述有机膜层包括第一平坦化层、及形成于所述第一平坦化层表面的第二平坦化层，所述压力感应板位于所述第一平坦化层与所述第二平坦化层之间，所述第二平坦化层开设有压感通孔，所述压力感应板与所述压力传感线通过所述压感通孔连接。
  6. 根据权利要求1所述的LTPS阵列基板，其中，所述压力感应板形成于所述有机膜层表面，所述压力传感线形成于所述压力感应板表面，所述压力传感线与压力感应板接触连接。
  7. 根据权利要求1所述的LTPS阵列基板，其中，所述公共电极与所述压力传感线均为透明金属电极。
  8. 一种LTPS阵列基板，其包括：
    基板；
    绝缘栅层，形成于所述基板表面；
    间绝缘层，形成于所述绝缘栅层表面；
    有机膜层，形成于所述间绝缘层表面，以及
    压力感应板，形成于所述有机膜层，所述压力感应板为压电材料；以及
    金属层，形成于所述有机膜层上；其中，
    所述金属层经图形化处理后，形成相互绝缘的公共电极与压力传感线，所述压力传感线连接所述压力感应板。
  9. 根据权利要求8所述的LTPS阵列基板，其中，所述金属层包括若干间隔分布的所述公共电极，相邻所述公共电极之间设置有一条所述压力传感线，各所述压力传感线的同一端并联于同一条信号走线。
  10. 根据权利要求8所述的LTPS阵列基板，其中，所述有机膜层表面形成介质层，所述介质层上形成有触控通孔。
  11. 根据权利要求10所述的LTPS阵列基板，其中，所述介质层表面形成有平面触控信号线，所述平面触控信号线通过所述触控通孔连接所述公共电极。
  12. 根据权利要求8所述的LTPS阵列基板，其中，所述有机膜层包括第一平坦化层、及形成于所述第一平坦化层表面的第二平坦化层，所述压力感应板位于所述第一平坦化层与所述第二平坦化层之间，所述第二平坦化层开设有压感通孔，所述压力感应板与所述压力传感线通过所述压感通孔连接。
  13. 根据权利要求8所述的LTPS阵列基板，其中，所述压力感应板形成于所述有机膜层表面，所述压力传感线形成于所述压力感应板表面，所述压力传感线与压力感应板接触连接。
  14. 根据权利要求8所述的LTPS阵列基板，其中，所述公共电极与所述压力传感线均为透明金属电极。
  15. 一种LTPS阵列基板制作方法，其中，所述制作方法包括：
    提供一基板；
    在所述基板上制作缓冲层；
    在所述基板上制作薄膜晶体管的沟道；
    在所述基板上制作栅绝缘层、栅极以及扫描线，其中所述栅极与对应的扫描线连接；
    在所述基板上制作间绝缘层，并在所述间绝缘层上形成源极通孔与漏极通孔；
    在所述基板上沉积第一金属层，并通过对所述第一金属层进行图形化处理，在所述间绝缘层上形成所述薄膜晶体管的源极、所述薄膜晶体管的漏极、以及数据线；所述源极通过所述源极通孔与所述沟道的一侧连接，所述漏极通过所述漏极通过与所述沟道的另一侧连接；其中所述薄膜晶体管的源极与对应的数据线连接；
    在所述基板上制作有机膜层，并在所述有机膜层内形成压力感应板，然后在所述有机膜层上形成压感通孔；
    在所述有基板上沉积第二金属层，并通过对所述第二金属层进行图形化处理，在所述有机膜层上形成相互绝缘的公共电极与压力传感线；所述压力传感线通过所述压感通孔与所述压力感应板连接；
    在所述基板上制作介质层以及平面触控信号线，并在所述介质层上形成触控通孔，所述平面触控信号线通过所述触控通孔与所述公共电极相连接；以及
    在所述基板上制作钝化层以及像素电极，并在所述钝化层、介质层以及所述有机膜层上形成像素电极通孔，所述像素电极通过所述像素电极通孔与所述漏极连接。
  16. [根据细则26改正03.07.2017]
    根据权利要求15所述的LTPS阵列基板制作方法，其中，所述在所述基板上制作有机膜层，并在所述有机膜层内形成压力感应板，然后在所述有机膜层上形成压感通孔的步骤包括：
    在所述基板上制作第一平坦化层，并在所述第一平坦化层上制作所述压力感应板；
    在所述基板上制作第二平坦化层，并在所述第二平坦化层上形成所述压感通孔。
PCT/CN2017/087784 2017-04-26 2017-06-09 Ltps阵列基板及其制作方法 WO2018196111A1 (zh)

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Publication number Priority date Publication date Assignee Title
CN110085601A (zh) * 2018-01-26 2019-08-02 华为技术有限公司 一种阵列基板及其制备方法、显示面板、终端设备
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008180953A (ja) * 2007-01-25 2008-08-07 Seiko Epson Corp 表示装置及び表示装置の製造方法並びに電子ペーパー
CN103018974A (zh) * 2012-11-30 2013-04-03 京东方科技集团股份有限公司 液晶显示装置、多晶硅阵列基板及制作方法
CN203553175U (zh) * 2013-11-07 2014-04-16 北京京东方光电科技有限公司 一种薄膜晶体管及阵列基板、显示器
US20160202519A1 (en) * 2015-01-09 2016-07-14 Samsung Display Co., Ltd. Liquid crystal display having improved lateral visibility
CN105808001A (zh) * 2016-03-10 2016-07-27 京东方科技集团股份有限公司 一种压感触摸屏及显示装置
CN105807991A (zh) * 2016-03-03 2016-07-27 京东方科技集团股份有限公司 一种显示基板、内嵌式触摸屏、其驱动方法及显示装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105892758B (zh) * 2016-06-30 2019-05-07 武汉华星光电技术有限公司 阵列基板、触控显示器及电子装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008180953A (ja) * 2007-01-25 2008-08-07 Seiko Epson Corp 表示装置及び表示装置の製造方法並びに電子ペーパー
CN103018974A (zh) * 2012-11-30 2013-04-03 京东方科技集团股份有限公司 液晶显示装置、多晶硅阵列基板及制作方法
CN203553175U (zh) * 2013-11-07 2014-04-16 北京京东方光电科技有限公司 一种薄膜晶体管及阵列基板、显示器
US20160202519A1 (en) * 2015-01-09 2016-07-14 Samsung Display Co., Ltd. Liquid crystal display having improved lateral visibility
CN105807991A (zh) * 2016-03-03 2016-07-27 京东方科技集团股份有限公司 一种显示基板、内嵌式触摸屏、其驱动方法及显示装置
CN105808001A (zh) * 2016-03-10 2016-07-27 京东方科技集团股份有限公司 一种压感触摸屏及显示装置

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