WO2018196110A1 - 一种扇出导线结构及显示面板 - Google Patents

一种扇出导线结构及显示面板 Download PDF

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Publication number
WO2018196110A1
WO2018196110A1 PCT/CN2017/087782 CN2017087782W WO2018196110A1 WO 2018196110 A1 WO2018196110 A1 WO 2018196110A1 CN 2017087782 W CN2017087782 W CN 2017087782W WO 2018196110 A1 WO2018196110 A1 WO 2018196110A1
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WO
WIPO (PCT)
Prior art keywords
metal layer
sub
fan
out wire
layer
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PCT/CN2017/087782
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English (en)
French (fr)
Inventor
安立扬
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深圳市华星光电技术有限公司
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Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/572,835 priority Critical patent/US10276599B2/en
Publication of WO2018196110A1 publication Critical patent/WO2018196110A1/zh

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals

Definitions

  • the present invention relates to the field of liquid crystal display, and in particular to a fan-out wire structure and a display panel.
  • VA vertical Alignment
  • the display mode has the advantages of wide viewing angle, high contrast, and no friction, making it a common display mode for TFT-LCDs for large-size TVs.
  • Large size, high ppi (pixels per Inch) products are the consistent pursuit of the display industry. Due to limitations in product size, peripheral boarder, and large board utilization, it is difficult to design an equal-resistance wiring when designing a fanout trace.
  • panel signals are provided by COF, each COF (Chip On Flex, or, Chip On Film, often referred to as a flip-chip film, is responsible for the signal in one area, and the signal is introduced into the plane via a fan-shaped fanout line connected to the COF.
  • the circuit signals inside the fanout input panel will have different degrees of attenuation.
  • the signal near each side of the COF area is severely deformed, and the signal in the middle area is relatively perfect. Due to the difference of the input signals at different positions, the panel is easy to display defects such as vertical bright and dark bands when displaying the screen, which reduces the product level and causes losses.
  • the present invention provides a fan-out wire structure, comprising: a first metal layer, a second metal layer, and a third metal layer disposed in an insulating manner, wherein the first metal layer includes a first sub-metal layer disposed at intervals And a second sub-metal layer, the third metal layer includes a third sub-metal layer and a fourth sub-metal layer, wherein the first sub-metal layer passes through the third sub-metal layer and the second metal layer One end of the second metal layer is connected to the second sub-metal layer through the fourth sub-metal layer.
  • the first metal layer, the second metal layer, and the third metal layer are stackedly stacked from bottom to top, and the first metal layer and the second metal layer are disposed between a second insulating layer is disposed between the first insulating layer, the second metal layer and the third metal layer;
  • the fan-out wire structure further includes a first through hole penetrating the first insulating layer and the second insulating layer And two second through holes penetrating the second insulating layer, one end of the third sub-metal layer is connected to the first sub-metal layer through the first through hole, the third sub-metal layer
  • the other end of the second metal layer is connected to one end of the second metal layer, and the other end of the second metal layer is connected to one end of the fourth sub-metal layer through the second through hole.
  • the fourth sub-metal layer is connected to the second sub-metal layer.
  • the first through holes are two, the first sub-metal layer is provided with two first connection branches, and the first sub-metal layer of the third metal layer is provided with Two third connection branches, the two third connection branches are respectively connected to the first connection branch through the first through hole.
  • the fan-out wire structure includes a third through hole penetrating the first insulating layer, and the fourth sub-metal layer penetrates the third through hole and the second sub-hole Metal layer connection.
  • the fourth sub-metal layer includes a body and a connection end disposed at both ends of the body, one of the connection ends connecting the second metal layer, and the other connection end is connected
  • the main body and the second sub-metal layer are on the same horizontal surface, and a third insulating layer is disposed between the main body and the first sub-metal layer.
  • the first metal layer is a gate layer
  • the second metal layer is a source
  • the third metal layer is a pixel electrode layer
  • the resistance of the fan-out wire structure changes the third metal layer and/or by modulating the distance between the first through hole and the second through hole. Adjusting a length of the second metal layer, or changing a resistance of the fan-out wire structure to change the third metal layer and/or the first portion by modulating a distance between the two second through holes The length of the two metal layers is adjusted.
  • the resistance of the fan-out wire structure is adjusted by modulating the width of the second metal layer and/or the third metal layer.
  • the resistance of the fan-out wire structure is adjusted by modulating the width of the second metal layer and/or the third metal layer.
  • the present invention also provides a display panel, comprising: a lead pad region, a control wire and a fan-out wire combination, one end of the fan-out wire combination is connected to the lead pad, and the other end is connected to the control The wire, the fan-out wire combination comprising a plurality of fan-out wire structures as described in any of the above.
  • the present invention provides three metal layers as a fan-out wire structure, and the three-layer metal layer is arranged to adjust the fan-out by adjusting the length and/or width of the second metal layer and/or the third metal layer.
  • the resistance of the wire structure can eliminate the difference in resistance caused by the length of the COF internal traces, and ensure that the internal signal delay of the panel is consistent to some extent, eliminating vertical bright and dark bands.
  • Figure 1 is a cross-sectional view showing a preferred embodiment of a fan-out wire structure of the present invention.
  • FIG. 2 is a plan view showing a preferred embodiment of the fan-out conductor structure of the present invention.
  • FIG 3 is a schematic view of a fan-out wire assembly of a preferred embodiment of the display panel of the present invention.
  • FIG. 4 is a schematic view of a fan-out wire assembly of still another preferred embodiment of the display panel of the present invention.
  • the fan-out wire structure including: a first metal layer 1, a second metal layer 2, and a third metal stacked in an insulating manner a layer 3, wherein the first metal layer 1 includes a first sub-metal layer 11 and a second sub-metal layer 12 that are not directly connected to each other, and the third metal layer 3 includes a third sub-metal layer 31 that is not directly connected to each other and a fourth sub-metal layer 32, the first sub-metal layer 11 being connected to one end of the second metal layer 2 through a third sub-metal layer 31 of the third metal layer 3, the second metal layer 2 The other end is connected to the second sub-metal layer 12 of the first metal layer 1 through the fourth sub-metal layer 32 of the third metal layer 3.
  • the resistance of the fan-out wire structure can be adjusted by modulating the parameters of the second metal layer 2 and/or the third metal layer 3.
  • the parameter includes at least: a
  • the length and/or width of the second metal layer 2 can be adjusted to adjust the resistance of the fan-out wire structure, or the resistance of the fan-out wire structure can be adjusted by adjusting the length and/or width of the third metal layer 3.
  • adjusting the resistance of the fan-out wire structure by adjusting the length and/or width of the second metal layer 2 and the third metal layer 3, etc. and may be other, for example, by modulating the second
  • the length of the metal layer 2 and/or the third metal layer 3 adjusts the resistance of the fan-out wire structure, and the fan can also be adjusted by modulating the width of the second metal layer 2 and/or the third metal layer 3.
  • the resistance of the wire structure is not limited here.
  • the first metal layer 1, the second metal layer 2, and the third metal layer 3 are stacked from bottom to top, and the first metal layer 1 and the second metal layer are stacked.
  • a first insulating layer 4 is disposed between the two, and a second insulating layer 5 is disposed between the second metal layer 2 and the third metal layer 3.
  • the fan-out wire structure further includes a first through hole 6 penetrating through the first insulating layer 4 and the second insulating layer 5, and two second through holes 7 penetrating the second insulating layer 5, the third metal layer 3
  • One end of the first sub-metal layer 31 is connected to the first sub-metal layer 11 of the first metal layer 1 through the first through hole 6, and the other end of the third sub-metal layer 31 of the third metal layer 3 is penetrated through the second through hole.
  • the sub-metal layer 32 is connected to the second sub-metal layer 12 of the first metal layer 1.
  • the resistance of the fan-out wire structure changes the third metal layer 3 and/or the second metal layer by modulating the distance between the first through hole 6 and the second through hole 7.
  • the length of 2 is adjusted, or the resistance of the fan-out wire structure is adjusted by changing the distance between the two second through holes 7 to change the length of the third metal layer 3 and/or the second metal layer 2.
  • the first through holes 6 are respectively disposed on two sides of the third metal layer 3, and preferably, the first through holes 6 are symmetrically disposed on the third metal layer 3.
  • the first sub-metal layer 11 of the first metal layer 1 is provided with two first connecting branches (in the figure)
  • the third sub-metal layer 31 of the third metal layer 3 is provided with two third connection branches (not shown), and the two third connection branches respectively penetrate the first through hole 4 and the The first connection branch is connected.
  • the first through hole 6 passes through the first insulating layer 4 and the second insulating layer 5, and is disposed on both sides of the third metal layer 3, and can be electrically connected by bypassing the third metal layer 3.
  • the fan-out wire structure further includes a third through hole 8 penetrating through the first insulating layer 4, and the fourth sub-metal layer 32 of the third metal layer 3 penetrates the third through hole 8 (see 2) is connected to the second sub-metal layer 12 of the first metal layer 1.
  • the second sub-metal layer 32 of the third metal layer 3 includes a main body and a connecting end (not shown) disposed at two ends of the main body, and one connecting end is connected to the second metal.
  • Layer 2 the other connection end is connected to the second sub-metal layer 12 of the first metal layer 1
  • the main body and the second sub-metal layer 12 of the first metal layer 1 are on the same horizontal surface, the main body and the first metal layer 1
  • a third insulating layer 9 is disposed between the first sub-metal layers 11 to insulate between the first metal layer 1 and the third metal layer 3.
  • the first metal layer 1 is a gate layer (M1)
  • the second metal layer is a source (M2)
  • the third metal layer is a pixel electrode layer (ITO electrode layer).
  • the resistance of the fan-out wire structure can also be adjusted by changing the width of the second metal layer 2 and/or the third metal layer 3.
  • the width of the second metal layer 2 becomes small, the resistance of the corresponding fan-out wire structure becomes large.
  • the width of the partial structure of the third metal layer 3 can be adjusted. As shown in FIG. 4, the width of the second metal layer 2 is equal to the width of the third sub-metal layer 31 of the third metal layer 3, and is smaller than The width of the fourth sub-metal layer 32 of the trimetal layer 3.
  • the parameter may also be a material (resistivity, conductivity, etc.) of the corresponding metal layer, for example, by changing the material of the source and/or ITO electrode layer (eg, doping, etc.) to obtain a desired
  • the resistance value can also be adjusted by changing the length and width of the source and/or ITO electrode layer to obtain a desired resistance value, and the width of the source can be greater than or equal to the width of the ITO electrode layer, in this embodiment. In a further preferred embodiment, the width of the source is equal to the width of the ITO electrode layer.
  • the resistance of the corresponding fan-out wire structure is adjusted by comprehensively considering changing the length and width of the second metal layer 2 and/or the third metal layer 3, for example, when it is necessary to increase the corresponding
  • the length of the second metal layer 2 and/or the third metal layer 3 may be lengthened while reducing the width of the corresponding metal layer.
  • a three-layer metal layer is disposed as a fan-out wire structure, and the three-layer metal layer is disposed, and the fan-out wire is adjusted by adjusting parameters (such as length and width) of the second metal layer and/or the third metal layer.
  • the resistance of the structure can eliminate the difference in resistance caused by the length of the COF internal traces, and ensure that the internal signal delay of the panel is consistent to some extent, eliminating the vertical bright and dark bands.
  • the invention further provides a display panel, the display panel comprises at least a lead pad area (not shown), a fan-out wire combination and a plurality of control wires, the plurality of control wires are arranged in parallel and connected to the corresponding plurality of wires.
  • a thin film transistor the fan-out wire combination is connected to the control wire to a lead pad of a lead pad region, the lead pad region is used to set a control integrated circuit, so that the control integrated circuit can combine the control signal through the fan-out wire And the control wire is transferred to the corresponding thin film transistor.
  • FIG. 3 is a schematic diagram of a fan-out wire assembly of a display panel of the present invention, the fan-out wire combination including a plurality of fan-out wire structures b and at least two metal wires a, the plurality of fan-out wire structures b Arranging in an inner region of a region (fan-out region) where the fan-out wire combination is located, the at least two metal wires a are disposed at an edge (periphery) of the fan-out region, and the lengths of the two metal wires are greater than The distance from the lead pad region to the control wire of the fan-out wire structure.
  • the specific structure, the technical effect, and the working principle of the fan-out wire structure are substantially the same as those of the foregoing embodiment. For details, refer to the description of the foregoing embodiment, and details are not described herein again.
  • the plurality of fan-out wire structures are disposed on the fan-out area, and the adjacent fan-out wire structures are opposite in direction, specifically, one of the fan-out wire structures
  • a first sub-metal layer 11 of a metal layer 1 is connected to the lead pad
  • a second sub-metal layer 12 is connected to the control wire
  • a first sub-metal layer 11 of the first metal layer 1 of the other fan-out wire structure is connected.
  • the control wire, the second sub-metal layer 12 is connected to the lead pad.
  • the second of the fan-out conductor structure b1 near the middle of the area where the fan-out wire combination is located The width of the metal layer is smaller than the width of the second metal layer of the fan-out wire structure b2 away from the middle of the area where the fan-out wire combination is located, and/or the third metal layer of the fan-out wire structure b1 near the middle of the area where the fan-out wire combination is located.
  • the width is less than the width of the third metal layer of the fan-out conductor structure b2 away from the middle of the area where the fan-out wire combination is located.
  • the width of the metal layer of the fan-out wire structure disposed at the middle position is smaller than the width of the metal layer of the fan-out wire structure at both ends, and the resistance is large on both sides of the wound area, and the intermediate resistance is small.
  • the resistance compensation is performed by the width of the metal layer of the fan-out wire structure in the inner region, so that the uniformity of the resistance of the fan-out wire structure in the fan-out region can be achieved, and the internal winding of the COF is eliminated to some extent due to the length difference. Resistance difference.
  • the widths of the first metal layer 1, the second metal layer 2, and the third metal layer 3 of the fan-out wire structure may be equal.
  • the second metal layer 2 and the third metal layer 3 of the fan-out wire structure have the same width and are smaller than the width of the first metal layer 1.
  • a fan-out wire structure of three metal layers is provided at an internal position (excluding a position other than the edge) to perform resistance compensation, so that the fan The resistance value of the fan-out line in the out-of-area becomes uniform, which ensures the delay of the internal signal of the input panel to a certain extent and improves the display quality.
  • the resistance of the corresponding fan-out wire structure can be adjusted by controlling the lengths of the second metal layer and the third metal layer, so that the fan-out wire structure is disposed from the edge of the fan-out region to the middle position.
  • the lengths of the second metal layer and/or the third metal layer become large to achieve uniformity of the fan-out wire structure of the fan-out region.
  • the present invention also provides a display device, which includes the display panel described in the above embodiments.
  • the specific structure and technical effects of the display panel are substantially the same as those described in the foregoing embodiments. For details, refer to the foregoing embodiment. I won't go into details here.
  • the fan-out wire structure In the present invention, three metal layers are provided as the fan-out wire structure, and the three-layer metal layer is disposed, and the resistance of the fan-out wire is adjusted by adjusting the length and/or width of the second metal layer and/or the third metal layer.
  • the value can eliminate the difference in resistance caused by the length of the COF internal traces, and ensure that the internal signal delay of the panel is consistent to some extent, eliminating the vertical bright and dark bands.

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Abstract

一种扇出导线结构、显示面板及显示器件,扇出导线结构包括:第一金属层(1)、第二金属层(2)及第三金属层(3),第一金属层(1)包括第一子金属层(11)及第二子金属层(12),第三金属层(3)包括第三子金属层(31)及第四子金属层(32),第一子金属层(11)通过第三子金属层(31)与第二金属层(2)的一端连接,第二金属层(2)的另一端通过第四子金属层(32)与第二子金属层(12)连接。

Description

一种扇出导线结构及显示面板 技术领域
本发明涉及液晶显示领域,特别是涉及一种扇出导线结构及显示面板。
背景技术
液晶面板行业已经历了数十年的发展,VA(vertical alignment)显示模式以其宽视野角、高对比度和无须摩擦配相等优势,成为大尺寸TV用TFT-LCD的常见显示模式。大尺寸、高ppi(pixels per inch)产品是显示行业的一贯追求。由于产品尺寸,外围boarder,大板利用率等方面的限制,在设计fanout走线时很难设计成等电阻的布线。一般来讲,面板信号由COF提供,每个COF(Chip On Flex, or, Chip On Film,常称覆晶薄膜)负责一片区域的信号,信号经由与COF相连的扇形fanout走线导入面内。越靠近COF两侧的fanout走线阻值越大,越靠近COF中间阻值越小。由于fanout走线阻值的差异,经fanout输入面板内部的电路信号会有不同程度的衰减,每个COF区域靠近两侧的信号变形严重,中间区域信号相对较完美。而由于不同位置输入信号的差异,面板在显示画面时容易垂直亮暗带等显示不良,降低产品等级,造成损失。
因此,现有技术存在缺陷,急需改进。
技术问题
本发明的目的在于提供一种扇出导线结构及显示面板,旨在解决现有技术中的扇出导线阻值不一致导致的延迟不一致影响显示品质的问题。
技术解决方案
为解决上述问题,本发明提供的技术方案如下:
本发明提供一种扇出导线结构,包括:绝缘地叠放设置的第一金属层、第二金属层及第三金属层,其中,所述第一金属层包括间隔设置的第一子金属层及第二子金属层,第三金属层包括间隔设置的的第三子金属层及第四子金属层,所述第一子金属层通过所述第三子金属层与所述第二金属层的一端连接,所述第二金属层的另一端通过所述第四子金属层与所述第二子金属层连接。
在本发明的扇出导线结构中,所述第一金属层、第二金属层及第三金属层由下至上绝缘地叠放设置,所述第一金属层与第二金属层之间设置有第一绝缘层、所述第二金属层与第三金属层之间设置有第二绝缘层;所述扇出导线结构还包括贯穿所述第一绝缘层及第二绝缘层的第一通孔,及两个贯穿所述第二绝缘层的第二通孔,所述第三子金属层的一端贯穿所述第一通孔与所述第一子金属层连接,所述第三子金属层的另一端贯穿所述第二通孔与所述第二金属层的一端连接,所述第二金属层的另一端贯穿所述第二通孔与所述第四子金属层的一端连接,所述第四子金属层与所述第二子金属层连接。
在本发明的扇出导线结构中,所述第一通孔为两个,所述第一子金属层设置有两个第一连接分支,所述第三金属层的第一子金属层设置有两个第三连接分支,所述两个第三连接分支分别贯穿所述第一通孔与所述第一连接分支连接。
在本发明的扇出导线结构中,所述扇出导线结构包括贯穿所述第一绝缘层的第三通孔,所述第四子金属层贯穿所述第三通孔与所述第二子金属层连接。
在本发明的扇出导线结构中,所述第四子金属层包括主体及设置在所述主体两端的连接端,一个所述连接端连接所述第二金属层,另一个所述连接端连接所述第二子金属层,所述主体与所述第二子金属层处于同一水平面上,所述主体与所述第一子金属层之间设置有第三绝缘层。
在本发明的扇出导线结构中,所述第一金属层为栅极层、第二金属层为源极、第三金属层为像素电极层。
在本发明的扇出导线结构中,所述扇出导线结构的阻值通过调变所述第一通孔与所述第二通孔之间的距离来改变所述第三金属层和/或所述第二金属层的长度来调整,或者所述扇出导线结构的阻值通过调变两个所述第二通孔之间的距离来改变所述第三金属层和/或所述第二金属层的长度来调整。
在本发明的扇出导线结构中,所述扇出导线结构的阻值通过调变所述第二金属层和/或第三金属层的宽度来调整。
在本发明的扇出导线结构中,所述扇出导线结构的阻值通过调变所述第二金属层和/或第三金属层的宽度来调整。
本发明还提供一种显示面板,其特征在于,包括:一引线焊盘区、控制导线及扇出导线组合,所述扇出导线组合的一端连接所述引线焊盘,另一端连接所述控制导线,所述扇出导线组合包括多个如上述任一项所述的扇出导线结构。
有益效果
本发明相对于现有技术,设置三层金属层作为扇出导线结构,该三层金属层叠放设置,通过调整第二金属层和/第三金属层的长度和/或宽度来调整该扇出导线结构的阻值,可消除COF内部走线因长度不一引起的阻值差异,一定程度上保证面板内部信号延迟一致,消除垂直亮暗带。
附图说明
图1是为本发明的扇出导线结构的一较佳实施例的剖视图。
图2是为本发明的扇出导线结构的一较佳实施例的平面图。
图3是本发明的显示面板的一较佳实施例的扇出导线组合的示意图。
图4是本发明的显示面板的又一较佳实施例的扇出导线组合的示意图。
本发明的最佳实施方式
以下各实施例的说明是参考附加的图式,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。
在图中,结构相似的模块是以相同标号表示。
请参照图1,为本发明的扇出导线结构的一较佳实施例的剖视图,该扇出导线结构包括:绝缘地叠放设置的第一金属层1、第二金属层2及第三金属层3,其中,所述第一金属层1包括彼此不直接连接的第一子金属层11及第二子金属层12,第三金属层3包括彼此不直接连接的第三子金属层31及第四子金属层32,所述第一子金属层11通过所述第三金属层3的第三子金属层31与所述第二金属层2的一端连接,所述第二金属层2的另一端通过所述第三金属层3的第四子金属层32与所述第一金属层1的第二子金属层12连接。具体地,所述扇出导线结构的阻值可通过调变所述第二金属层2和/或第三金属层3的参数来调整。具体地,所述参数至少包括:对应金属层的长度、宽度。
例如:可调整第二金属层2的长度和/或宽度来调整该扇出导线结构的阻值,或者通过调整第三金属层3的长度和/或宽度来调整该扇出导线结构的阻值,又或者通过调整第二金属层2及第三金属层3的长度和/或宽度等来调整该扇出导线结构的阻值,还可以是其他,又例如,可通过调变所述第二金属层2和/或第三金属层3的长度来调整该扇出导线结构的阻值,还可通过调变所述第二金属层2和/或第三金属层3的宽度来调整该扇出导线结构的阻值,此处对此不作限制。
在本实施例的一个优选方案中,所述第一金属层1、第二金属层2及第三金属层3由下至上绝缘地叠放设置,所述第一金属层1与第二金属层2之间设置有第一绝缘层4、所述第二金属层2与第三金属层3之间设置有第二绝缘层5。
进一步地,该扇出导线结构还包括贯穿第一绝缘层4及第二绝缘层5的第一通孔6,及两个贯穿第二绝缘层5的第二通孔7,第三金属层3的第一子金属层31的一端贯穿第一通孔6与第一金属层1的第一子金属层11连接,第三金属层3的第三子金属层31的另一端贯穿第二通孔7与第二金属层2的一端连接,第二金属层2的另一端贯穿第二通孔7与第三金属层3的第四子金属层32的一端连接,第三金属层3的第四子金属层32与第一金属层1的第二子金属层12连接。
在本实施例的一个优选方案中,该扇出导线结构的阻值通过调变第一通孔6与第二通孔7之间的距离来改变第三金属层3和/或第二金属层2的长度来调整,或者该扇出导线结构的阻值通过调变两个第二通孔7之间的距离来改变第三金属层3和/或第二金属层2的长度来调整。在本实施例的一个优选方案中,该第一通孔6为两个,分别设置在该第三金属层3的两侧,优选地,该第一通孔6对称设置在第三金属层3的两侧(该两个第一通孔6的连线垂直所述第三金属层3所在直线),第一金属层1的第一子金属层11设置有两个第一连接分支(图中未示),第三金属层3的第三子金属层31设置有两个第三连接分支(图中未示),所述两个第三连接分支分别贯穿所述第一通孔4与所述第一连接分支连接。该第一通孔6穿过第一绝缘层4及第二绝缘层5,设置在第三金属层3的两侧,可绕开该第三金属层3而进行电连接。
进一步地,如图2所示,该扇出导线结构还包括贯穿第一绝缘层4的第三通孔8,该第三金属层3的第四子金属层32贯穿第三通孔8(见图2)与第一金属层1的第二子金属层12连接。
在本实施例的一个优选方案中,该第三金属层3的第二子金属层32包括主体及设置在所述主体两端的连接端(图中未示),一个连接端连接该第二金属层2,另一个连接端连接第一金属层1的第二子金属层12,该主体与第一金属层1的第二子金属层12处于同一水平面上,该主体与第一金属层1的第一子金属层11之间设置有第三绝缘层9,将第一金属层1与第三金属层3之间绝缘。
优选地,该第一金属层1为栅极层(M1)、第二金属层为源极(M2)、第三金属层为像素电极层(ITO电极层)。
在本实施例的又一个优选方案中,还可通过改变第二金属层2和/或第三金属层3的宽度来调整所述扇出导线结构的阻值。例如,当第二金属层2的宽度变小时,对应扇出导线结构的阻值就会变大。具体地,可调整第三金属层3的部分结构的宽度来实现,如图4所示,第二金属层2的宽度等于第三金属层3的第三子金属层31的宽度,且小于第三金属层3的第四子金属层32的宽度。
本实施例中,上述参数还可为对应金属层的材质(电阻率、导电率等),例如,可通过改变该源极和/或ITO电极层的材质(例如掺杂等)以获得需要的电阻阻值,也可以通过改变该源极和/或ITO电极层的长度、宽度来调整以获得需要的电阻阻值,该源极的宽度可大于或等于ITO电极层的宽度,在本实施例的进一步优选方案中,该源极的宽度等于ITO电极层的宽度。
在本实施例的另一优选方案中,综合考虑改变第二金属层2和/或第三金属层3的长度及宽度来调整对应的扇出导线结构的阻值,例如,当需要增加对应的扇出导线结构的阻值时,可延长所述第二金属层2和/或第三金属层3的长度,并同时减小对应的金属层的宽度来实现。
本实施例中,设置三层金属层作为扇出导线结构,该三层金属层叠放设置,通过调整第二金属层和/第三金属层的参数(如长度、宽度)来调整该扇出导线结构的阻值,可消除COF内部走线因长度不一引起的阻值差异,一定程度上保证面板内部信号延迟一致,消除垂直亮暗带。
本发明还提供一种显示面板,该显示面板至少包括一引线焊盘区(图中未示)、扇出导线组合及多条控制导线,该多条控制导线平行排列并连接至对应的多个薄膜晶体管,所述扇出导线组合连接该控制导线至引线焊盘区的引线焊盘中,该引线焊盘区用于设置控制集成电路,以使得控制集成电路能够将控制信号通过扇出导线组合及控制导线传送至对应的薄膜晶体管。
如图3所示,为本发明的显示面板的扇出导线组合的示意图,该扇出导线组合包括多个扇出导线结构b及至少两条金属导线a,所述多个扇出导线结构b设置在所述扇出导线组合所在区域(扇出区域)的内部区域,所述至少两条金属导线a设置在该扇出区域的边缘(外围),所述两条金属导线的长度大于所述扇出导线结构的从所述引线焊盘区到所述控制导线的距离。该扇出导线结构的具体结构、技术效果及工作原理与上述实施例的描述基本一致,具体可参考上述实施例的描述,此处不再赘述。
在本实施例的一个优选方案中,所述多个扇出导线结构设置在所述扇出区域上,相邻的所述扇出导线结构方向相反,具体地,其中一个扇出导线结构的第一金属层1的第一子金属层11连接所述引线焊盘,第二子金属层12连接所述控制导线,另一个扇出导线结构的第一金属层1的第一子金属层11连接所述控制导线,第二子金属层12连接所述引线焊盘。
在本实施例的又一优选方案中,如图4所示,相邻的两个扇出导线结构(b1、b2)中,靠近扇出导线组合所在区域中部的扇出导线结构b1的第二金属层的宽度小于远离扇出导线组合所在区域中部的扇出导线结构b2的第二金属层的宽度,和/或靠近扇出导线组合所在区域中部的扇出导线结构b1的第三金属层的宽度小于远离扇出导线组合所在区域中部的扇出导线结构b2的第三金属层的宽度。
本实施例中,设置在中部位置的扇出导线结构的金属层的宽度小于位于两端的扇出导线结构的金属层的宽度,在伤处区域的两侧电阻较大,中间电阻较小的情况下,通过内部区域的扇出导线结构的金属层的宽度来进行电阻补偿,可实现扇出区域的扇出导线结构的阻值均匀性,一定程度上消除COF内部走线因长度不一引起的阻值差异。
在本实施例的又一优选方案中,扇出导线结构的第一金属层1、第二金属层2及第三金属层3的宽度可相等。
在本实施例的又一优选方案中,扇出导线结构的第二金属层2及第三金属层3的宽度相等,且均小于第一金属层1的宽度。
本实施例中,对扇出区域的两侧电阻较大、中间电阻较小的情况,在内部位置(除去边缘以外的位置)设置三层金属层的扇出导线结构来进行电阻补偿,使得扇出区域的扇出线的阻值变均匀,一定程度上保证输入面板内部信号的延迟一致,提高显示品质。
需要说明的是,可以通过控制该第二金属层及第三金属层的长度来调整对应的扇出导线结构的阻值,因此由扇出区域的边缘到中部位置设置的扇出导线结构中,第二金属层和/第三金属层的长度变大,以实现扇出区域的扇出导线结构的均匀性。
本发明还提出一种显示器件,该显示器件包括上述实施例描述的显示面板,该显示面板的具体结构及带来的技术效果与上述实施例描述的基本一致,具体可参考上述实施例,此处不再赘述。
在本发明中,设置三层金属层作为扇出导线结构,该三层金属层叠放设置,通过调整第二金属层和/第三金属层的长度和/或宽度来调整该扇出导线的阻值,可消除COF内部走线因长度不一引起的阻值差异,一定程度上保证面板内部信号延迟一致,消除垂直亮暗带。综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。

Claims (11)

  1. 一种扇出导线结构,其包括:绝缘地叠放设置的第一金属层、第二金属层及第三金属层,其中,所述第一金属层包括间隔设置的第一子金属层及第二子金属层,第三金属层包括间隔设置的的第三子金属层及第四子金属层,所述第一子金属层通过所述第三子金属层与所述第二金属层的一端连接,所述第二金属层的另一端通过所述第四子金属层与所述第二子金属层连接。
  2. 根据权利要求1所述的扇出导线结构,其中,所述第一金属层、第二金属层及第三金属层由下至上绝缘地叠放设置,所述第一金属层与第二金属层之间设置有第一绝缘层、所述第二金属层与第三金属层之间设置有第二绝缘层;所述扇出导线结构还包括贯穿所述第一绝缘层及第二绝缘层的第一通孔,及两个贯穿所述第二绝缘层的第二通孔,所述第三子金属层的一端贯穿所述第一通孔与所述第一子金属层连接,所述第三子金属层的另一端贯穿所述第二通孔与所述第二金属层的一端连接,所述第二金属层的另一端贯穿所述第二通孔与所述第四子金属层的一端连接,所述第四子金属层与所述第二子金属层连接。
  3. 根据权利要求2所述的扇出导线结构,其中,所述第一通孔为两个,所述第一子金属层设置有两个第一连接分支,所述第三金属层的第一子金属层设置有两个第三连接分支,所述两个第三连接分支分别贯穿所述第一通孔与所述第一连接分支连接。
  4. 根据权利要求3所述的扇出导线结构,其中,所述扇出导线结构包括贯穿所述第一绝缘层的第三通孔,所述第四子金属层贯穿所述第三通孔与所述第二子金属层连接。
  5. 根据权利要求4所述的扇出导线结构,其中,所述第四子金属层包括主体及设置在所述主体两端的连接端,一个所述连接端连接所述第二金属层,另一个所述连接端连接所述第二子金属层,所述主体与所述第二子金属层处于同一水平面上,所述主体与所述第一子金属层之间设置有第三绝缘层。
  6. 根据权利要求5所述的扇出导线结构,其中,所述第一金属层为栅极层、第二金属层为源极、第三金属层为像素电极层。
  7. 根据权利要求2所述的扇出导线结构,其中,所述扇出导线结构的阻值通过调变所述第一通孔与所述第二通孔之间的距离来改变所述第三金属层和/或所述第二金属层的长度来调整,或者所述扇出导线结构的阻值通过调变两个所述第二通孔之间的距离来改变所述第三金属层和/或所述第二金属层的长度来调整。
  8. 根据权利要求2所述的扇出导线结构,其中,所述扇出导线结构的阻值通过调变所述第二金属层和第三金属层的宽度来调整。
  9. 根据权利要求2所述的扇出导线结构,其中,所述扇出导线结构的阻值通过调变所述第二金属层或第三金属层的宽度来调整。
  10. 一种扇出导线结构,其包括:绝缘地叠放设置的第一金属层、第二金属层及第三金属层,其中,所述第一金属层包括间隔设置的第一子金属层及第二子金属层,第三金属层包括间隔设置的的第三子金属层及第四子金属层,所述第一子金属层通过所述第三子金属层与所述第二金属层的一端连接,所述第二金属层的另一端通过所述第四子金属层与所述第二子金属层连接;
    所述第一金属层、第二金属层及第三金属层由下至上绝缘地叠放设置,所述第一金属层与第二金属层之间设置有第一绝缘层、所述第二金属层与第三金属层之间设置有第二绝缘层;所述扇出导线结构还包括贯穿所述第一绝缘层及第二绝缘层的第一通孔,及两个贯穿所述第二绝缘层的第二通孔,所述第三子金属层的一端贯穿所述第一通孔与所述第一子金属层连接,所述第三子金属层的另一端贯穿所述第二通孔与所述第二金属层的一端连接,所述第二金属层的另一端贯穿所述第二通孔与所述第四子金属层的一端连接,所述第四子金属层与所述第二子金属层连接;
    所述第一通孔为两个,所述第一子金属层设置有两个第一连接分支,所述第三金属层的第一子金属层设置有两个第三连接分支,所述两个第三连接分支分别贯穿所述第一通孔与所述第一连接分支连接;
    所述扇出导线结构包括贯穿所述第一绝缘层的第三通孔,所述第四子金属层贯穿所述第三通孔与所述第二子金属层连接;
    所述第四子金属层包括主体及设置在所述主体两端的连接端,一个所述连接端连接所述第二金属层,另一个所述连接端连接所述第二子金属层,所述主体与所述第二子金属层处于同一水平面上,所述主体与所述第一子金属层之间设置有第三绝缘层;
    所述扇出导线结构的阻值通过调变所述第一通孔与所述第二通孔之间的距离来改变所述第三金属层和/或所述第二金属层的长度来调整,或者所述扇出导线结构的阻值通过调变两个所述第二通孔之间的距离来改变所述第三金属层和/或所述第二金属层的长度来调整。
  11. 一种显示面板,其包括:一引线焊盘区、控制导线及扇出导线组合,所述扇出导线组合的一端连接所述引线焊盘,另一端连接所述控制导线,所述扇出导线组合包括多个如权利要求1所述的扇出导线结构。
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