CN110928085B - 阵列基板及显示面板 - Google Patents
阵列基板及显示面板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 101
- 239000000463 material Substances 0.000 claims abstract description 30
- 238000003466 welding Methods 0.000 claims abstract description 12
- 238000002161 passivation Methods 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 abstract description 26
- 238000005260 corrosion Methods 0.000 abstract description 26
- 239000011651 chromium Substances 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 239000011148 porous material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910001868 water Inorganic materials 0.000 description 3
- 229910018575 Al—Ti Inorganic materials 0.000 description 2
- 229910018580 Al—Zr Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910017813 Cu—Cr Inorganic materials 0.000 description 2
- 229910017945 Cu—Ti Inorganic materials 0.000 description 2
- 229910017985 Cu—Zr Inorganic materials 0.000 description 2
- 229910018487 Ni—Cr Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-RNFDNDRNSA-N lead-211 Chemical compound [211Pb] WABPQHHGFIMREM-RNFDNDRNSA-N 0.000 description 1
- WABPQHHGFIMREM-BKFZFHPZSA-N lead-212 Chemical compound [212Pb] WABPQHHGFIMREM-BKFZFHPZSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Abstract
本发明提供一种阵列基板及显示面板。显示面板包括阵列基板,阵列基板包括显示区和非显示区,所述非显示区包括扇出区和焊垫区,所述焊垫区包括多个焊垫,每一条扇出线与一个焊垫对应连接;每一条扇出线均包括:第一金属层、设置在所述第一金属层上的第二金属层、设置在所述第二金属层上的第三金属层和设置在所述第三金属层上的第四金属层,其中,所述第一金属层、所述第二金属层、所述第三金属层、所述第四金属层的材料均不同。本发明通过把扇出线的结构进行改变来增加产品的耐腐蚀性。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种阵列基板及显示面板。
背景技术
当前液晶显示面板的周边布线处的腐蚀一直以来都是液晶显示行业改善的难点与重点,尤其容易发生在IC绑定(bonding)的深浅孔处对焊垫腐蚀,焊垫腐蚀具有持续性,而腐蚀的类型为孔蚀类腐蚀,当孔蚀一旦发生,蚀孔内金属就会溶解,尤其是构成焊垫的金属层的一些金属与外界侵入深孔的杂质金属就会溶解。
如图1所示,为现有的一种液晶显示面板的周边布线处的阵列基板结构示意图,阵列基板90包括层叠设置的扇出线91、绝缘层92、钝化层93、电极层94和阻隔层95。由于阵列基板清洗时可能存在氯气和水氧侵蚀,经侵蚀形成侵蚀孔或者其本身存在深浅孔,如果是在含Cl离子水溶液中,则阴极反应为吸氧反应,由于孔内氧的不断消耗,孔内氧浓度下降,而孔蚀外溶液仍保持富氧,形成孔内外“供氧差异电池”,从而扇出线91作为阳极、电极层94作为阴极。在阳极处涉及到的一些反应主要为In2O3+6H+→2In3++3H2O;在阳极处涉及到的一些反应主要有:2H2O→O2+4H++4e-,M→Mn++ne-,4Cl-→2Cl2+4e-;即孔内为阳离子,金属溶解使阳离子不断增加,为保持电中性,孔外阴离子(Cl离子)向孔内迁移,孔内氯化物浓集并发生水解,反应式为Mn++nH2O→M(OH)n+nH+,其中M包括构成扇出线91的一些金属与外界侵入深孔的杂质金属。从而进一步促进阳极溶解,阳离子更多,如此循环下去,直至孔完全被破坏。并且由于电势差的存在会加速腐蚀的速度。
由于扇出线91的结构大致为两层金属结构或三层金属结构,很容易被腐蚀。因此,需要设计一种新的阵列基板及显示面板,来克服现有技术中的缺陷。
发明内容
针对以上现有技术存在的缺点和不足之处,本发明提供一种阵列基板及显示面板,从防腐蚀性方面考虑,通过把焊垫的金属结构改变来增加产品的耐腐蚀性。
本发明其中一实施例中提供一种阵列基板,其包括显示区和非显示区,所述非显示区包括扇出区和焊垫区,所述扇出区包括多条扇出线,所述焊垫区包括多个焊垫,每一条扇出线与一个焊垫对应连接;每一条扇出线均包括:第一金属层、设置在所述第一金属层上的第二金属层、设置在所述第二金属层上的第三金属层和设置在所述第三金属层上的第四金属层,其中,所述第一金属层、所述第二金属层、所述第三金属层、所述第四金属层的材料均不同。
进一步地,每一条扇出线还包括设置在所述第四金属层上的第五金属层。
进一步地,所述第五金属层的材料与所述第三金属层的材料相同。
进一步地,所述第一金属层的材质包括Ti、Cr或Zr中的任一种。
进一步地,所述第二金属层的材质包括Ni。
进一步地,所述第三金属层的材质包括Mo。
进一步地,所述第四金属层的材质包括Cu或Al。
进一步地,所述扇出区还包括绝缘层、钝化层以及电极层;所述绝缘层设于所述扇出线上方两侧且中部裸露所述扇出线;所述钝化层设于所述绝缘层上且中部裸露所述扇出线;所述电极层设于所述钝化层以及所述扇出线上。
进一步地,所述扇出区还包括阻隔层,所述阻隔层设于所述电极层上。
本发明再一实施例中一种显示面板,包括上述阵列基板。
本发明的技术效果在于,提供一种阵列基板及显示面板,通过把扇出线的结构进行改变来增加产品的耐腐蚀性。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为现有的一种阵列基板的结构示意图;
图2为本发明实施例的一种阵列基板结构示意图;
图3为本发明实施例的扇出区的截面图。
图中部件标识如下:
1扇出线,2绝缘层,3钝化层,4电极层,5阻隔层,
10显示区,11第一金属层,12第二金属层,13第三金属层,
14第四金属层,15第五金属层,20非显示区,21扇出区,22焊垫区,
100阵列基板,110像素单元,210扇出线,211、212驱动电压引线,
213数据电压引线,220焊垫,221、222驱动传输垫,223数据传输垫。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或成一体;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
如图2所示,本发明实施例提供一种阵列基板100,包括显示区10和非显示区20,所述显示区10设置多个像素单元110,每一像素单元110连接对应的驱动电压引线211、212以及数据电压引线213,所述非显示区20包括扇出区21和焊垫区22,所述扇出区21包括多条扇出线210,所述扇出线210由所述驱动电压引线211、212及所述数据电压引线213延伸构成,所述焊垫区22包括多个焊垫220,每一条扇出线210与一个焊垫220对应连接,分别对应为多各驱动传输垫221、222以及多个数据传输垫220。具体的,多条驱动电压引线211、212一对一连接到连接到多个驱动传输垫221、222,多个数据电压引线213一对一连接到多个数据传输垫223。
本实施例中,所述焊垫220用于绑定驱动电路(未图示),数据传输垫220用来接收驱动电路中图像处理器传送的数据电压Vdata,并将数据电压Vdata经由数据电压引线213传送至对应的像素单元110。驱动传输垫221、222分别用来传送高/低电平的驱动电压Vdd/Vss,并将驱动电压Vdd/Vss经由驱动电压引线211、212传送至对应的像素单元110。
需要说明的是,在其他实施例中,所述焊垫220用于绑定驱动电路,该驱动电路可以为数据线(Data)提供驱动信号;或者,可以为向栅线层(Gate)提供驱动信号;又或者,可以为向阵列基板100中的读取信号线提供触控信号;又或者,对于具有GOA(Gate Driver onArray,阵列基板行驱动)电路的阵列基板100而言,还可以为用于向该GOA电路提供时钟信号、电压源(VSS、VDD、VGL、VGH等),本发明对此不作限定。
由于阵列基板100清洗时可能存在氯气和水氧侵蚀,经侵蚀形成侵蚀孔或者走线本身存在深浅孔,因此容易被腐蚀。
如图3所示,所述阵列基板100的所述扇出区21包括层叠设置的扇出线1、绝缘层2、钝化层3以及电极层4;所述绝缘层2设于所述扇出线1上方两侧且中部裸露所述扇出线1;所述钝化层3设于所述绝缘层2上且中部裸露所述扇出线1;所述电极层4设于所述钝化层3以及所述扇出线1上。
本实施例中,所述扇出区21还包括阻隔层5,所述阻隔层5设于所述电极层4上,用于阻隔外界氯气和水氧侵蚀。
在所述焊垫区22的所述焊垫220的上表面不设置所述阻隔层5,所述焊垫220的上表面用于绑定驱动电路实现电连接。
为增加所述扇出线1的耐腐蚀性,每一个条扇出线210均包括:第一金属层11、设置在所述第一金属层11上的第二金属层12、设置在所述第二金属层12上的第三金属层13和设置在所述第三金属层13上的第四金属层14,其中,所述第一金属层11、所述第二金属层12、所述第三金属层13、所述第四金属层14的材料均不同。这样有助于抵抗多种不同环境的侵蚀,当某一层被腐蚀后其他各层均不受影响,从而能够保证正常的信号传输。
本实施例中,所述第一金属层11的材质包括Ti、Cr或Zr中的任一种。
本实施例中,所述第二金属层12的材质包括Ni。
本实施例中,所述第三金属层13的材质包括Mo。
本实施例中,所述第四金属层14的材质包括Cu或Al。
本实施例中,所述第一金属层11的材质包括Ti、Cr或Zr中的任一种。其中Ti、Cr、Zr均为惰性金属,其本身具有耐腐蚀性。所述第二金属层12的材质包括Ni,优选所述第一金属层11的材质为Cr,此时形成Ni-Cr结构,具有很好的稳定性。在奥氏体不锈钢中,耐腐蚀性18Cr-9Ni<17Cr-12Ni-2.5Mo<20Cr-14Ni-3.5Mo,由此看出铬含量越高其稳定性越好,所述Ni金属可增加奥氏体结构的稳定性;另外,一方面Ni含量的增加可使Ni-Cr结合能力增加,从而阻碍了Cl-离子向氧化膜中最大拉应力的迁移;另一方面Ni含量的增加可提高合金层错能,使裂纹和扩展困难;此外Ni可以控制电化学行为和控制。因此采用Ni-Cr结构,其耐腐蚀性会得到很大提高。
本实施例中,所述第四金属层14的材质包括Cu或Al。这两种材料的材质具有低电阻率,且价格低廉,因此可被广泛采用。
因此,对于所述第四金属层14为Cu结构产品,所述扇出线1的结构优选为Ni-Mo-Cu-Mo,Ni-Ti-Cu-Ti,Ni-Cr-Cu-Cr,Ni-Zr-Cu-Zr,Cr-Ni-Mo-Cu-Mo,Cr-Ni-Ti-Cu-Ti,Cr-Ni-Cr-Cu-Cr,Cr-Ni-Zr-Cu-Zr。其中抗腐蚀性Ti>Cr>Zr,因此优选抗腐蚀性强的Ti。
对于所述第四金属层14为Al结构产品,所述扇出线1的结构优选为Ni-Mo-Al-Mo,Ni-Ti-Al-Ti,Ni-Cr-Al-Cr,Ni-Zr-Al-Zr,Cr-Ni-Mo-Al-Mo,Cr-Ni-Ti-Al-Ti,Cr-Ni-Cr-Al-Cr,Cr-Ni-Zr-Al-Zr。其中抗腐蚀性Ti>Cr>Zr,因此优选抗腐蚀性强的Ti。
如图3所示,为进一步地增加耐腐蚀性,所述扇出线1还包括设置在所述第四金属层14上的第五金属层15。
其中,优选所述第五金属层15的材料与所述第三金属层13的材料相同。即所述第五金属层15的材料包括Mo,起到抗腐蚀的作用,Mo的作用在于以的形式吸附于金属表面,可形成类似于结构的保护膜,从而防止了Cl-离子的穿透,从而对位于所述第五金属层15的材料与所述第三金属层13之间的所述第四金属层14起到双层保护。
本发明还提供一种显示面板,包括上述阵列基板100。本实施例提供的显示面板的工作原理,与前述阵列基板100的实施例工作原理一致,具体结构关系及工作原理参见前述阵列基板100实施例,此处不再赘述。
本发明的技术效果在于,提供一种阵列基板及显示面板,通过把扇出线的结构进行改变,形成类似于不锈钢的结构来增加产品的耐腐蚀性。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。
Claims (10)
1.一种阵列基板,其特征在于,包括显示区和非显示区,所述非显示区包括扇出区和焊垫区,所述扇出区包括多条扇出线,所述焊垫区包括多个焊垫,每一条扇出线与一个焊垫对应连接;
每一条扇出线均包括:第一金属层、设置在所述第一金属层上的第二金属层、设置在所述第二金属层上的第三金属层和设置在所述第三金属层上的第四金属层,其中,所述第一金属层、所述第二金属层、所述第三金属层、所述第四金属层的材料均不同。
2.根据权利要求1所述的阵列基板,其特征在于,每一条扇出线还包括设置在所述第四金属层上的第五金属层。
3.根据权利要求2所述的阵列基板,其特征在于,所述第五金属层的材料与所述第三金属层的材料相同。
4.根据权利要求1所述的阵列基板,其特征在于,所述第一金属层的材质包括Ti、Cr或Zr中的任一种。
5.根据权利要求1所述的阵列基板,其特征在于,所述第二金属层的材质包括Ni。
6.根据权利要求1所述的阵列基板,其特征在于,所述第三金属层的材质包括Mo。
7.根据权利要求1所述的阵列基板,其特征在于,所述第四金属层的材质包括Cu或Al。
8.根据权利要求1所述的阵列基板,其特征在于,所述扇出区还包括:
绝缘层,设于所述扇出线上方两侧且中部裸露所述扇出线;
钝化层,设于所述绝缘层上且中部裸露所述扇出线;以及
电极层,设于所述钝化层以及所述扇出线上。
9.根据权利要求8所述的阵列基板,其特征在于,所述扇出区还包括:
阻隔层,设于所述电极层上。
10.一种显示面板,包括如权利要求1-9中任一项所述的阵列基板。
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