WO2018166027A1 - 光罩结构及coa型阵列基板 - Google Patents

光罩结构及coa型阵列基板 Download PDF

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WO2018166027A1
WO2018166027A1 PCT/CN2017/080735 CN2017080735W WO2018166027A1 WO 2018166027 A1 WO2018166027 A1 WO 2018166027A1 CN 2017080735 W CN2017080735 W CN 2017080735W WO 2018166027 A1 WO2018166027 A1 WO 2018166027A1
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Prior art keywords
light shielding
shielding portion
shape
central
corresponds
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PCT/CN2017/080735
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English (en)
French (fr)
Inventor
孙涛
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武汉华星光电技术有限公司
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Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US15/539,701 priority Critical patent/US10459331B2/en
Priority to KR1020197029777A priority patent/KR20190119665A/ko
Priority to EP17900639.0A priority patent/EP3598234A4/en
Priority to JP2019550211A priority patent/JP2020512583A/ja
Publication of WO2018166027A1 publication Critical patent/WO2018166027A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting

Definitions

  • the present invention relates to the field of liquid crystal display device manufacturing, and in particular to a photomask structure and a COA type array substrate.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • a conventional liquid crystal display panel is composed of a color filter (CF), a thin film transistor array substrate (TFT Array Substrate), and a liquid crystal layer (Liquid Crystal Layer) disposed between the two substrates.
  • the working principle is to control the rotation of the liquid crystal molecules of the liquid crystal layer by applying a driving voltage on the two substrates, and refract the light of the backlight module to generate a picture.
  • the COA type array substrate does not need to consider the deviation of the box, so the black matrix can be shielded from the gate line, the data line, and the thin film transistor unit. Under the premise of a structure that needs to be shielded, the width of the black matrix is appropriately reduced, thereby increasing the aperture ratio.
  • a conventional COA type array substrate has a protective layer 100, a color filter layer 200, a pixel electrode 300, and a black matrix (not shown) laminated on an array of thin film transistors T10, and a color film layer 200.
  • a via 201 is formed in the upper opening to realize electrical connection between the pixel electrode 300 and a signal line of a metal material.
  • the via 201 in the color film layer 200 is formed by using a pattern of a mask and a negative photoresist.
  • the characteristic of the negative photoresist is that the area irradiated with light is not removed by the developer, and the area not irradiated with light is removed by the developer, which is exactly the opposite of the characteristic of the positive photoresist.
  • the pattern used in the conventional photomask for fabricating the via 201 in the color film layer 200 is a solid circular shading area 900 and a hollow at the periphery of the shading area 900.
  • the light transmissive area 901 corresponds to the position of the via 201 in the color film layer 200.
  • the use of the above-mentioned conventional photomask to fabricate the via 201 in the color film layer 200 causes the thickness and slope of the color film layer 200 at the via 201 to be easily controlled, and the slope is not easily controlled. If the pixel electrode 300 in the via hole 201 is broken, the electrical connection between the pixel electrode 300 and the signal line of the metal material is poor, resulting in poor display of the product.
  • Another object of the present invention is to provide a COA type array substrate, wherein the gradient of the color film layer via holes is moderate, and the quality of electrical connection between the pixel electrodes and the metal material signal lines can be improved to avoid display defects.
  • the present invention provides a reticle structure including a central light shielding portion, a peripheral light shielding portion surrounding the central light shielding portion and conforming to an outer contour shape of the central light shielding portion, and a peripheral light shielding portion and a center An annular hollow slit between the shades.
  • the outer shape of the central light shielding portion is circular
  • the peripheral light shielding portion is corresponding to a circular ring shape
  • the hollowing slit is corresponding to a circular ring shape.
  • the outer contour shape of the central light shielding portion is a square
  • the peripheral light shielding portion corresponds to a square-shaped annular shape
  • the hollow hollow slit corresponds to a square-shaped annular shape.
  • the outer contour shape of the central shading portion is a regular hexagon
  • the peripheral shading portion corresponds to a ring shape of a regular hexagonal shape
  • the hollow slit corresponds to a ring shape of a regular hexagon pattern.
  • the outer contour shape of the central light shielding portion is a regular octagon shape
  • the outer peripheral light shielding portion corresponds to a ring shape of a regular octagonal shape
  • the hollow hollow slit corresponds to a ring shape of a regular octagon shape.
  • the width of the hollow slit is less than or equal to 2.0 um.
  • the width of the peripheral light shielding portion is greater than 0.5 um and less than or equal to 1.0 um.
  • the material of the central light blocking portion and the peripheral light blocking portion is chromium.
  • the present invention also provides a COA type array substrate comprising: a thin film transistor arranged in an array, and a protective layer, a color film layer, a pixel electrode, and a black matrix laminated on the thin film transistor in this order from bottom to top; a via hole is formed in the color film layer, and the pixel electrode is thinly connected via the via hole The drain of the film transistor;
  • the via hole is formed by the photomask having the photomask structure described above, and the slope is moderated, so that the electrical connection quality between the pixel electrode and the signal line of the metal material can be improved, and display defects can be avoided.
  • the present invention also provides a reticle structure including a central light shielding portion, a peripheral light shielding portion surrounding the central light shielding portion and conforming to the outer contour shape of the central light shielding portion, and being sandwiched between the peripheral light shielding portion and the central light shielding portion Annular hollow slit;
  • the width of the hollow slit is less than or equal to 2.0 um;
  • the material of the central light shielding portion and the peripheral light shielding portion is chromium.
  • the present invention provides a reticle structure in which an annular hollow slit is interposed between a peripheral opaque portion and a central opaque portion, and exposure light is diffracted through the hollow slit to generate a propagation reversal.
  • the bending and the gradual change of the energy intensity, together with the negative photoresist, can make the gradient of the finally formed color film via hole slow, thereby improving the electrical connection quality between the pixel electrode and the metal signal line, and avoiding the occurrence of Poor display.
  • the COA type array substrate provided by the invention has the color film layer via hole formed by the photomask having the reticle structure, the slope is moderated, and the electrical connection quality between the pixel electrode and the metal material signal line can be improved, thereby avoiding Poor display.
  • FIG. 1 is a schematic cross-sectional structural view of a conventional COA type array substrate
  • FIG. 2 is a schematic view showing a pattern adopted by a conventional photomask for forming a color filter layer via hole
  • FIG. 3 is a schematic view showing the use of a conventional photomask to form a color film via hole to cause a steep slope of the via hole;
  • Figure 4 is a schematic view showing a first embodiment of the reticle structure of the present invention.
  • Figure 5 is a schematic view showing a second embodiment of the reticle structure of the present invention.
  • Figure 6 is a schematic view showing a third embodiment of the reticle structure of the present invention.
  • Figure 7 is a schematic view showing a fourth embodiment of the reticle structure of the present invention.
  • FIG. 8 is a schematic view showing the use of a photomask having the reticle structure of the present invention to form a color filter layer via hole so that the via slope is slowed down;
  • FIG. 9 is a schematic cross-sectional view showing a COA type array substrate of the present invention.
  • the present invention provides a reticle structure for fabricating a color film layer via hole in a COA type array substrate, the reticle structure including a central light shielding portion 1 surrounding the central light shielding portion 1
  • the peripheral light shielding portion 3 that matches the outer contour shape of the central light shielding portion 1 and the annular hollow slit 5 sandwiched between the outer peripheral light shielding portion 3 and the central light shielding portion 1 are provided.
  • the photomask of the present invention is used in combination with a negative photoresist, and the pattern formed by the central shading portion 1, the hollow slit 5, and the peripheral shading portion 3 corresponds to the position of the finally obtained color filter layer via hole.
  • an annular hollow slit 5 is interposed between the peripheral light-shielding portion 3 and the central light-shielding portion 1, and the exposure light passes through the hollow slit 5 to be diffracted, and the propagation reverse bending and energy intensity gradient are generated.
  • the material of the central light blocking portion 1 and the peripheral light blocking portion 3 is chromium (Cr).
  • the outer contour of the central light shielding portion 1 has a regular octagon shape, and the peripheral light shielding portion 3 corresponds to a positive octagon.
  • the vertical distance from the outer contour of the central light-shielding portion 1 to the inner contour of the peripheral light-shielding portion 3 is defined as the width of the hollow slit 5, and the width of the hollow slit 5 is referred to as B, and the optimum value of B is:
  • the vertical distance between the inner contour and the outer contour of the peripheral light-shielding portion 3 is defined as the width of the peripheral light-shielding portion 3, and the width of the outer light-shielding portion 3 is denoted as A, and the optimum value of A is:
  • the slope of the finally obtained color film layer via hole is remarkably improved; and when A ⁇ 0.5 um, the gradient of the finally obtained color film layer via hole is close to Vertical, the diffraction effect cannot be seen.
  • the size of the central light shielding portion 1 can be determined according to the specific size of different color film layer via holes.
  • Figure 5 shows a second embodiment of the reticle structure of the present invention, in which the second embodiment
  • the outer contour of the central light shielding portion 1 is circular
  • the peripheral light shielding portion 3 corresponds to a circular ring shape
  • the hollow slit 5 corresponds to a circular ring shape.
  • the value of the width A of the peripheral light-shielding portion 3 and the width B of the hollow slit 5 are the same as those in the first embodiment, and the description thereof will not be repeated here.
  • Figure 6 shows a third embodiment of the reticle structure of the present invention.
  • the outer contour of the central opaque portion 1 is square, and the peripheral opaque portion 3 corresponds to a square-shaped ring.
  • the hollow slit 5 corresponds to a square-shaped ring shape.
  • the value of the width A of the peripheral light-shielding portion 3 and the width B of the hollow slit 5 are the same as those in the first embodiment, and the description thereof will not be repeated here.
  • FIG. 7 shows a fourth embodiment of the structure of the photomask of the present invention.
  • the outer contour of the central shading portion 1 has a regular hexagon shape, and the peripheral shading portion 3 corresponds to a positive hexagon.
  • An annular shape of the ring, the hollow slit 5 corresponds to a ring of a regular hexagonal pattern.
  • the value of the width A of the peripheral light-shielding portion 3 and the width B of the hollow slit 5 are the same as those in the first embodiment, and the description thereof will not be repeated here.
  • the reticle structure of the present invention is not limited to the above four embodiments, and the central opaque portion 1 may also have a regular polygonal shape of a different pentagon, a regular heptagon, a regular decagon, or the like, and the peripheral light shielding portion 3
  • the hollow slit 5 is a ring of a corresponding regular polygon pattern, which is related to the precision of the exposure device and the etching device. If the precision of the exposure device and the etching device is high, a regular polygon shape with a small number of sides may be selected. Conversely, if the precision of the exposure device or the etching device is low, a regular polygon shape with a large number of sides may be selected.
  • the present invention further provides a COA type array substrate, comprising a thin film transistor T arranged in an array, and a protective layer 10 and a color film layer 20 laminated on the thin film transistor T in order from bottom to top.
  • the pixel electrode 30 and the black matrix (not shown).
  • a via hole 21 is formed in the color filter layer 20, and the pixel electrode 30 is connected to the drain of the thin film transistor T via the via hole 21.
  • the via hole 21 is formed by a photomask having the above-described photomask structure, and the slope is moderated, so that the pixel electrode 30 in the via hole 21 is not easily broken, and the electrical connection quality between the signal lines of the metal material is improved, and the occurrence can be avoided. Poor display.
  • an annular hollow slit is interposed between the peripheral opaque portion and the central opaque portion, and the exposure light is diffracted through the hollow slit to generate a reverse deflection and
  • the gradual change of the energy intensity, combined with the negative photoresist, can slow the slope of the finally formed color film via, thereby improving the electrical connection quality between the pixel electrode and the metal signal line, and avoiding display defects.
  • the color film layer via hole is formed by the photomask having the photomask structure, the slope is moderated, and the electrical connection quality between the pixel electrode and the metal material signal line can be improved, thereby preventing display defects. .

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Filters (AREA)

Abstract

一种光罩结构及COA型阵列基板，该光罩结构包括中心遮光部（1）、包围中心遮光部并与中心遮光部的外轮廓形状一致的外围遮光部（3）、以及夹在外围遮光部与中心遮光部之间的环形的镂空狭缝（5），曝光光线经过镂空狭缝会发生衍射，产生传播反向的弯散及能量强度的渐变，配合负性光阻，能够使得最终制得的彩膜层过孔的坡度变缓，从而改善像素电极和金属材质的信号线之间的电连接质量，避免出现显示不良。

Description

光罩结构及COA型阵列基板 技术领域
本发明涉及液晶显示器件制程领域，尤其涉及一种光罩结构及COA型阵列基板。
背景技术
随着显示技术的不断发展，薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)因具有高画质、省电、机身薄、体积小、无辐射等优点，而被广泛地应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为平板显示装置中的主流。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。传统的液晶显示面板由彩膜基板(Color Filter，CF)、薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)、以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
目前，为了提高液晶显示面板的开口率，降低寄生电容效应，越来越多的液晶显示面板产品将彩膜集成设置在阵列基板一侧，即采用COA(Color Filter On Array)技术。与将彩膜和黑矩阵设在彩膜基板上的传统技术相比，COA型阵列基板不需要考虑对盒时的偏差，因此可以在保证黑矩阵能够遮挡栅极线、数据线和薄膜晶体管单元等需遮光的结构的前提下，适当减小黑矩阵的宽度，从而提高开口率。
如图1所示，现有的COA型阵列基板，其薄膜晶体管T10的阵列上依次层叠有保护层100、彩膜层200、像素电极300和黑矩阵(未图示)，并且彩膜层200上开设有过孔201，以实现像素电极300和金属材质的信号线之间的电连接。在实际的生产过程中，利用光罩(Mask)的图案配合负性光阻来制作所述彩膜层200内的过孔201。负性光阻的特性是被光照射的区域不会被显影液去除，而不被光照射的区域则会被显影液去除，这与正性光阻的特性恰好相反。
如图2所示，现有的用于制作所述彩膜层200内的过孔201的光罩所采用的图案是一实心圆形的遮光区900、以及位于该遮光区900外围的镂空 的透光区901，所述实心圆形的遮光区900对应于所述彩膜层200内的过孔201的位置。然而，如图3所示，使用上述现有的光罩来制作所述彩膜层200内的过孔201会使得过孔201处彩膜层200的厚度以及坡度(Taper)不容易控制，坡度较陡，容易引起过孔201内的像素电极300发生断裂，导致像素电极300和金属材质的信号线之间的电连接不佳，从而出现产品的显示不良。若要保证良好的电连接就需要制作尺寸更大的过孔201，这无疑会降低像素开口率，并且过孔201太大的状况容易导致气体在对盒制程后极易因震动而外泄，并扩散至液晶层，从而产生泡影(Bubble)并形成黑团，影响显示效果。
发明内容
本发明的目的在于提供一种光罩结构，能够使得彩膜层过孔的坡度变缓，改善像素电极和金属材质的信号线之间的电连接质量，避免出现显示不良。
本发明的目的还在于提供一种COA型阵列基板，其彩膜层过孔的坡度较缓和，能够改善像素电极和金属材质的信号线之间的电连接质量，避免出现显示不良。
为实现上述目的，本发明提供一种光罩结构，包括中心遮光部、包围所述中心遮光部并与中心遮光部的外轮廓形状一致的外围遮光部、以及夹在所述外围遮光部与中心遮光部之间的环形的镂空狭缝。
可选的，所述中心遮光部的外轮廓形状为圆形，所述外围遮光部对应为圆环形，所述镂空狭缝对应为圆环形。
可选的，所述中心遮光部的外轮廓形状为正方形，所述外围遮光部对应为正方形样式的环形，所述镂空狭缝对应为正方形样式的环形。
可选的，所述中心遮光部的外轮廓形状为正六边形，所述外围遮光部对应为正六边形样式的环形，所述镂空狭缝对应为正六边形样式的环形。
可选的，所述中心遮光部的外轮廓形状为正八边形，所述外围遮光部对应为正八边形样式的环形，所述镂空狭缝对应为正八边形样式的环形。
所述镂空狭缝的宽度小于等于2.0um。
所述外围遮光部的宽度大于0.5um且小于等于1.0um。
所述中心遮光部与外围遮光部的材质为铬。
本发明还提供一种COA型阵列基板，包括呈阵列式排布的薄膜晶体管、及自下至上依次层叠在所述薄膜晶体管上的保护层、彩膜层、像素电极、与黑矩阵；所述彩膜层上开设有过孔，所述像素电极经由所述过孔连接薄 膜晶体管的漏极；
所述过孔由具有上述光罩结构的光罩进行制作，坡度缓和，能够改善像素电极和金属材质的信号线之间的电连接质量，避免出现显示不良。
本发明还提供一种光罩结构，包括中心遮光部、包围所述中心遮光部并与中心遮光部的外轮廓形状一致的外围遮光部、以及夹在所述外围遮光部与中心遮光部之间的环形的镂空狭缝；
其中，所述镂空狭缝的宽度小于等于2.0um；
其中，所述中心遮光部与外围遮光部的材质为铬。
本发明的有益效果：本发明提供的一种光罩结构，在外围遮光部与中心遮光部之间夹设环形的镂空狭缝，曝光光线经过所述镂空狭缝会发生衍射，产生传播反向的弯散及能量强度的渐变，配合负性光阻，能够使得最终制得的彩膜层过孔的坡度变缓，从而改善像素电极和金属材质的信号线之间的电连接质量，避免出现显示不良。本发明提供的一种COA型阵列基板，其彩膜层过孔由具有上述光罩结构的光罩进行制作，坡度缓和，能够改善像素电极和金属材质的信号线之间的电连接质量，避免出现显示不良。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的COA型阵列基板的剖面结构示意图；
图2为现有的用于制作彩膜层过孔的光罩所采用的图案的示意图；
图3为使用现有的光罩来制作彩膜层过孔造成过孔坡度较陡的示意图；
图4为本发明的光罩结构第一实施例的示意图；
图5为本发明的光罩结构第二实施例的示意图；
图6为本发明的光罩结构第三实施例的示意图；
图7为本发明的光罩结构第四实施例的示意图；
图8为使用具有本发明的光罩结构的光罩来制作彩膜层过孔使得过孔坡度变缓的示意图；
图9为本发明的COA型阵列基板的剖面结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明 的优选实施例及其附图进行详细描述。
请同时参阅图4至图7，本发明提供一种光罩结构，用于制作COA型阵列基板内的彩膜层过孔，该光罩结构包括中心遮光部1、包围所述中心遮光部1并与中心遮光部1的外轮廓形状一致的外围遮光部3、以及夹在所述外围遮光部3与中心遮光部1之间的环形的镂空狭缝5。
采用本发明的光罩配合负性光阻进行使用，所述中心遮光部1、镂空狭缝5、及外围遮光部3共同构成的图案对应于最终制得的彩膜层过孔的位置。
根据光的衍射原理，光线在穿过狭缝、或小孔之类的障碍物后会发生不同程度的弯散传播，出现明暗条纹样的衍射图样，而且明暗条纹的边界并不锐利，呈现明暗相间的状态，同时，光线的能量强度也会渐变。本发明在外围遮光部3与中心遮光部1之间夹设环形的镂空狭缝5，曝光光线经过所述镂空狭缝5便会发生衍射，产生传播反向的弯散及能量强度的渐变，而不是像经过图2所示的现有光罩后那样仍沿直线传播；曝光后，不被光照射的区域被显影液去除，而被光照射的区域则不会被显影液去除，使得最终制得的彩膜层过孔的坡度如图8所示变缓，从而改善像素电极和金属材质的信号线之间的电连接质量，避免出现显示不良。
具体地，所述中心遮光部1与外围遮光部3的材质为铬(Cr)。
图4所示为本发明的光罩结构的第一实施例，在该第一实施例中，所述中心遮光部1的外轮廓形状为正八边形，所述外围遮光部3对应为正八边形样式的环形，所述镂空狭缝5对应为正八边形样式的环形。
将中心遮光部1的外轮廓至外围遮光部3的内轮廓的垂直距离定义为镂空狭缝5的宽度，将镂空狭缝5的宽度记作B，则B的最佳取值为：
B≤2.0um
当B＞2.0um时，彩膜层过孔内会出现光阻残留，引起刻蚀残留，影响曝光光线的衍射效果。
将外围遮光部3的内轮廓与外轮廓之间的垂直距离定义为外围遮光部3的宽度，将外围遮光部3的宽度记作A，则A的最佳取值为：
0.5um＜A≤1.0um
在外围遮光部3的宽度A的最佳取值范围内，最终制得的彩膜层过孔的坡度明显改善；而当A≤0.5um时，最终制得的彩膜层过孔的坡度接近竖直，衍射效果不能显现。
所述中心遮光部1的尺寸可根据不同的彩膜层过孔的具体大小来进行确定。
图5所示为本发明的光罩结构的第二实施例，在该第二实施例中，所 述中心遮光部1的外轮廓形状为圆形，所述外围遮光部3对应为圆环形，所述镂空狭缝5对应为圆环形。外围遮光部3的宽度A、及镂空狭缝5的宽度B的取值同实施例一，此处不再进行重复描述。
图6所示为本发明的光罩结构的第三实施例，在该第三实施例中，所述中心遮光部1的外轮廓形状为正方形，所述外围遮光部3对应为正方形样式的环形，所述镂空狭缝5对应为正方形样式的环形。外围遮光部3的宽度A、及镂空狭缝5的宽度B的取值同实施例一，此处不再进行重复描述。
图7所示为本发明的光罩的结构的第四实施例，在该第四实施例中，所述中心遮光部1的外轮廓形状为正六边形，所述外围遮光部3对应为正六边形样式的环形，所述镂空狭缝5对应为正六边形样式的环形。外围遮光部3的宽度A、及镂空狭缝5的宽度B的取值同实施例一，此处不再进行重复描述。
当然，本发明的光罩结构并不仅限于以上四个实施例，中心遮光部1还可选用正五边形、正七边形、正十边形等不同边数的正多边形形状，外围遮光部3及镂空狭缝5为对应的正多边形样式的环形，这与曝光设备、刻蚀设备的精度有关系。若曝光设备、刻蚀设备的精度较高，则可选用边数较少的正多边形形状，反之，若曝光设备、刻蚀设备的精度较低，则可选用边数较多的正多边形形状。
请参阅图9，本发明还提供一种COA型阵列基板，包括呈阵列式排布的薄膜晶体管T、及自下至上依次层叠在所述薄膜晶体管T上的保护层10、彩膜层20、像素电极30、与黑矩阵(未图示)。所述彩膜层20上开设有过孔21，所述像素电极30经由所述过孔21连接薄膜晶体管T的漏极。
所述过孔21由具有上述光罩结构的光罩进行制作，坡度缓和，从而过孔21内的像素电极30不易断裂，和金属材质的信号线之间的电连接质量得以改善，能够避免出现显示不良。
综上所述，本发明的光罩结构，在外围遮光部与中心遮光部之间夹设环形的镂空狭缝，曝光光线经过所述镂空狭缝会发生衍射，产生传播反向的弯散及能量强度的渐变，配合负性光阻，能够使得最终制得的彩膜层过孔的坡度变缓，从而改善像素电极和金属材质的信号线之间的电连接质量，避免出现显示不良。本发明的COA型阵列基板，其彩膜层过孔由具有上述光罩结构的光罩进行制作，坡度缓和，能够改善像素电极和金属材质的信号线之间的电连接质量，避免出现显示不良。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (14)

  1. 一种光罩结构，包括中心遮光部、包围所述中心遮光部并与中心遮光部的外轮廓形状一致的外围遮光部、以及夹在所述外围遮光部与中心遮光部之间的环形的镂空狭缝。
  2. 如权利要求1所述的光罩结构，其中，所述中心遮光部的外轮廓形状为圆形，所述外围遮光部对应为圆环形，所述镂空狭缝对应为圆环形。
  3. 如权利要求1所述的光罩结构，其中，所述中心遮光部的外轮廓形状为正方形，所述外围遮光部对应为正方形样式的环形，所述镂空狭缝对应为正方形样式的环形。
  4. 如权利要求1所述的光罩结构，其中，所述中心遮光部的外轮廓形状为正六边形，所述外围遮光部对应为正六边形样式的环形，所述镂空狭缝对应为正六边形样式的环形。
  5. 如权利要求1所述的光罩结构，其中，所述中心遮光部的外轮廓形状为正八边形，所述外围遮光部对应为正八边形样式的环形，所述镂空狭缝对应为正八边形样式的环形。
  6. 如权利要求1所述的光罩结构，其中，所述镂空狭缝的宽度小于等于2.0um。
  7. 如权利要求6所述的光罩结构，其中，所述外围遮光部的宽度大于0.5um且小于等于1.0um。
  8. 如权利要求1所述的光罩结构，其中，所述中心遮光部与外围遮光部的材质为铬。
  9. 一种COA型阵列基板，包括呈阵列式排布的薄膜晶体管、及自下至上依次层叠在所述薄膜晶体管上的保护层、彩膜层、像素电极、与黑矩阵；所述彩膜层上开设有过孔，所述像素电极经由所述过孔连接薄膜晶体管的漏极；
    所述过孔由具有如权利要求1所述的光罩结构的光罩进行制作，坡度缓和。
  10. 一种光罩结构，包括中心遮光部、包围所述中心遮光部并与中心遮光部的外轮廓形状一致的外围遮光部、以及夹在所述外围遮光部与中心遮光部之间的环形的镂空狭缝；
    其中，所述镂空狭缝的宽度小于等于2.0um；
    其中，所述中心遮光部与外围遮光部的材质为铬。
  11. 如权利要求10所述的光罩结构，其中，所述中心遮光部的外轮廓形状为圆形，所述外围遮光部对应为圆环形，所述镂空狭缝对应为圆环形。
  12. 如权利要求10所述的光罩结构，其中，所述中心遮光部的外轮廓形状为正方形，所述外围遮光部对应为正方形样式的环形，所述镂空狭缝对应为正方形样式的环形。
  13. 如权利要求10所述的光罩结构，其中，所述中心遮光部的外轮廓形状为正六边形，所述外围遮光部对应为正六边形样式的环形，所述镂空狭缝对应为正六边形样式的环形。
  14. 如权利要求10所述的光罩结构，其中，所述中心遮光部的外轮廓形状为正八边形，所述外围遮光部对应为正八边形样式的环形，所述镂空狭缝对应为正八边形样式的环形。15、如权利要求10所述的光罩结构，其中，所述外围遮光部的宽度大于0.5um且小于等于1.0um。
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