WO2018201545A1 - 光罩及其应用于主动开关阵列基板的制造方法 - Google Patents

光罩及其应用于主动开关阵列基板的制造方法 Download PDF

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Publication number
WO2018201545A1
WO2018201545A1 PCT/CN2017/086639 CN2017086639W WO2018201545A1 WO 2018201545 A1 WO2018201545 A1 WO 2018201545A1 CN 2017086639 W CN2017086639 W CN 2017086639W WO 2018201545 A1 WO2018201545 A1 WO 2018201545A1
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Prior art keywords
light
region
semi
transmissive
reflective material
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PCT/CN2017/086639
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English (en)
French (fr)
Inventor
陈猷仁
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惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US15/735,316 priority Critical patent/US20190011829A1/en
Publication of WO2018201545A1 publication Critical patent/WO2018201545A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device

Definitions

  • the present application relates to a manufacturing method, and in particular to a photomask and a method of manufacturing the same for an active switch array substrate.
  • the liquid crystal display is composed of a color filter substrate, an active switch array substrate and a liquid crystal filled between the two substrates.
  • the gap between the two substrates is maintained, and a plurality of spacers are distributed in the liquid crystal layer to maintain the gap.
  • the height of the two substrates is kept parallel, and the liquid crystal injection method is mainly liquid crystal vacuum injection method, but the injection time is time-consuming, and is currently replaced by a One Drop Fill (ODF), and the structure of the spacer needs to be updated.
  • ODF One Drop Fill
  • the known technique distributes spherical spacers between liquid crystal layers. This structure destroys the substrate due to the rolling of the spacer when the substrate is under pressure, or uneven distribution in the pixel region due to arbitrary distribution, and more because of the spacer. The scattering problem affects the yield of the product.
  • Photo Spacer (PS) has been formed by lithography technology, and the position, size and height of the spacer are precisely controlled to replace the structure of the conventional spherical spacer.
  • the function of the gap structure in the liquid crystal display is to control the interval between the first substrate and the second substrate of the display. Because the upper and lower pieces of glass are mainly filled with liquid crystal material. Without the support of the gap structure, the uniformity of the spacing between the upper and lower sheets of glass is not well maintained. However, the uniformity of the spacing between the first substrate and the second substrate has an important influence on maintaining the display effect of the liquid crystal display and its telecommunication quality.
  • the active switch array substrate is divided into a red-green blue resist layer in the opposite substrate (RGB on CF), and a flat-conversion type liquid crystal panel has a red-green blue resist layer on the active switch array substrate (RGB on Array/In -Plane Switching, IPS mode) and RGB on Array/Vertical Alignment (VA mode) in a vertical alignment type liquid crystal panel.
  • RGB on CF red-green blue resist layer on the active switch array substrate
  • VA mode RGB on Array/Vertical Alignment
  • the white photoresist and the photo spacer are all transparent materials, and the white photoresist is at least 30% more expensive than the photo spacer material.
  • the white photoresist materials are at least 30% more expensive than the photo spacer material.
  • the formation of via holes is small. Therefore, it is necessary to increase the size of white photoresist vias by more than 50um. Exposure of through holes > 20um, which will greatly sacrifice the aperture ratio, resulting in design difficulties or affect process yield.
  • an object of the present application is to provide a photomask and a manufacturing method thereof for the active switch array substrate, which can improve the aperture ratio of the pixel and reduce the cost of the mask.
  • a photomask according to the present application includes: a light transmissive region having a light transmissive substrate; and a semitransparent region disposed on the translucent substrate and made of chromium or Forming a chromium compound; a light shielding region disposed on the light transmissive substrate; and a plurality of fine line reflective material layers disposed between the semi-transmissive region and the light shielding region; wherein
  • the light transmittance of the mask is adjusted according to the incorporation and distribution density of a low-reflection material, so that the light transmittance of the semi-transmissive region is lower than the light transmittance of the light-transmitting region, and is higher than the light-shielding region. Light transmittance.
  • Another object of the present application is to provide a method for manufacturing an active switch array substrate, comprising: providing a first substrate; forming a first insulating layer on the first substrate; forming a plurality of active switching units in the first insulating layer Forming a plurality of parallel disposed photoresist layers on the first insulating layer to complete a color filter layer; simultaneously forming a plurality of photo spacers and a plurality of via holes in the color filter layer
  • the method includes: forming a light shielding material layer on the color filter layer to cover the color filter layer; and providing a light cover on the light shielding material layer, the light cover having a light transmission area, a light-shielding region and a light-transmissive region; and performing an exposure manufacturing and a development manufacturing to pattern the light-shielding material layer to form the plurality of photo spacers and the through holes, the semi-transmissive region and Adding a plurality of fine-line reflective material layers adjacent to the edge of the light-shielding
  • a further object of the present application is a photomask, the photomask comprising: a light transmissive region having a light transmissive substrate; and a semi-transmissive region disposed on the translucent substrate and chrome Or a chromium compound; a light shielding region disposed on the light transmissive substrate; and a plurality of fine line reflective material layers disposed between the semi-transmissive region and the light shielding region; a fine line reflective material layer, wherein a fine line width and a gap width of the thin line are 1 to 5 um; and when the reticle is in contact exposure, the plurality of thin line reflective material layers cause the semi-transparent area to be Slit light interference occurs at an edge of the opaque region; the semi-transmissive region is formed with a semi-transmissive film that can penetrate the exposure light, and the opaque region is formed with a light-shielding film; The light rate is adjusted according to the incorporation and distribution density of a low-reflective material; the low-reflective material is a
  • the plurality of fine-line reflective material layers have a thin line width and a gap width of 1 to 5 um.
  • the plurality of fine-line reflective material layers when the reticle is exposed to light, the plurality of fine-line reflective material layers cause slit light interference between the semi-transmissive regions and the edges of the light-shielding regions.
  • the semi-transmissive region is formed with a semi-transmissive film that can penetrate the exposure light, and the light-shielding region is formed with a light-shielding film, and the semi-transmissive region is transparent.
  • the rate is between 30% and 70%.
  • the plurality of fine-line reflective material layers and the material of the low-reflective material are selected from the group consisting of chromium metal and a compound thereof.
  • the low-reflection material is a group consisting of chromium and a compound thereof.
  • the reticle is a gray scale reticle, and a plurality of thin line reflective material layers are added to generate slit light interference.
  • the plurality of thin lines and the pitch are 1 to 5 um.
  • This application can increase the aperture ratio of the pixel and reduce the cost of the mask.
  • FIG. 1a is a schematic cross-sectional view of an exemplary red-green blue white resist layer and a photo spacer in an active switch array substrate.
  • FIG. 1b is a schematic cross-sectional view of an exemplary red, green, blue and white photoresist layer and a photo spacer and a photomask in an active switch array substrate.
  • FIG. 2a is a schematic cross-sectional view of a red, green, blue and white photoresist layer and a photo spacer and a photomask in an active switch array substrate in accordance with the method of the present application.
  • 2b is a schematic cross-sectional view of a red, green, blue and white photoresist layer and a photo spacer in an active switch array substrate in accordance with the method of the present application.
  • FIG 3 is a schematic view of a fine line and gap pattern of a reflective material layer in accordance with the method of the present application.
  • the word “comprising” is to be understood to include the component, but does not exclude any other component.
  • “on” means located above or below the target component, and does not mean that it must be on the top based on the direction of gravity.
  • the liquid crystal panel of the present application may include an active switch (for example, a Thin Film Transistor (TFT) substrate, a color filter (CF) substrate, and a liquid crystal layer formed between the two substrates.
  • an active switch for example, a Thin Film Transistor (TFT) substrate, a color filter (CF) substrate, and a liquid crystal layer formed between the two substrates.
  • TFT Thin Film Transistor
  • CF color filter
  • the liquid crystal panel of the present application may be a curved display panel.
  • the active switch such as TFT
  • the color filter layer (CF) of the present application may be formed on the same substrate.
  • FIG. 1a is a schematic cross-sectional view of an exemplary red, green, blue and white photoresist layer and a photo spacer in an active switch array substrate.
  • an active switch array substrate 10 includes: a first substrate 100; a first insulating layer 105 disposed on the first substrate 100; and a plurality of active switching units 130 disposed on the first substrate
  • An insulating layer 105 is disposed on the first insulating layer 105 and includes a plurality of first photoresist layers 110, second photoresist layers 111 and third photoresist layers arranged in parallel.
  • the plurality of photo spacers 114 are disposed on the color filter layer 106 and have the same material as the materials of the third photoresist layers 112, wherein the third photoresist layers 112 have at least one pass.
  • a hole 140; and a transparent electrode layer 120 are disposed on the color filter layer 106.
  • FIG. 1b is a schematic cross-sectional view of an exemplary red, green, blue and white photoresist layer and a photo spacer and a photomask in an active switch array substrate.
  • an active switch array substrate 10 includes: a first substrate 100; a first insulating layer 105 disposed on the first substrate 100; and a plurality of active switching units 130 disposed on On the first insulating layer 105, a color filter layer 106 is disposed on the first insulating layer 105, and includes a plurality of first photoresist layers 110, a second photoresist layer 111, and a third layer arranged in parallel.
  • the photo-resist layer 112 is disposed on the color filter layer 106 and has the same material as the material of the third photoresist layer 112, wherein the third photoresist layers 112 have At least one through hole 140 and the through hole 140 are sized to be d1; and a transparent electrode layer 120 is disposed on the color filter layer 106.
  • a mask 200 includes: a opaque region containing chrome 0%, a light transmissive region 220 containing about 98% chromium, and a half transparent region 210.
  • FIG. 2a is a method according to the present application, having a red, green, blue and white photoresist layer and a photo spacer and a photomask in the active switch array substrate
  • FIG. 2b is a schematic cross-sectional view of a red, green, blue and white photoresist layer and a photo spacer in an active switch array substrate according to the method of the present application. Referring to FIG.
  • an active switch array substrate 11 includes: a first substrate 100; a first insulating layer 105 disposed on the first substrate 100; and a plurality of active switch units 130 disposed on the first substrate
  • An insulating layer 105 is disposed on the first insulating layer 105 and includes a plurality of first photoresist layers 110, second photoresist layers 111 and third photoresist layers arranged in parallel.
  • the plurality of photo spacers 114 are disposed on the color filter layer 106 and have the same material as the materials of the third photoresist layers 112, wherein the third photoresist layers 112 have at least one pass.
  • a hole 150; and a transparent electrode layer 120 are disposed on the color filter layer 106.
  • an active switch array substrate 11 includes: a first substrate 100; a first insulating layer 105 disposed on the first substrate 100; An active switching unit 130 is disposed on the first insulating layer 105.
  • a color filter layer 106 is disposed on the first insulating layer 105 and includes a plurality of first photoresist layers 110 arranged in parallel.
  • the through hole 150 has a dimension d2 greater than 20 um.
  • the photo spacers 114 and the third photoresist layer 112 are integrally formed of the same material.
  • the combined shape of the photo spacers 114 and the third photoresist layer 112 is a convex shape with a narrow upper and a lower width.
  • a mask 201 includes: a opaque region containing chrome 0%, a light-transmissive region 220 containing about 98% of chromium, a half-transmissive region 210, and a plurality of thin lines 212 of reflective material layers. Slit light interference is generated, wherein the thin line width d3 and the pitch d4 are 1 to 5 um.
  • an active switch array substrate 11 includes: a first substrate 100; a first insulating layer 105 disposed on the first substrate 100; An active switching unit 130 is disposed on the first insulating layer 105; a color filter layer 106 is disposed on the first insulating layer 105 and includes a plurality of photoresist layers 110, 111, 112; a photo spacer 114 disposed on the color filter layer 106 and having the same material as the material of the plurality of photoresist layers 110, 111, 112 (for example, a white photoresist layer); The photoresist layers 110, 111, 112 and the plurality of photo spacers 114 are formed by exposure through a mask 201 having a light transmissive region 220, a semi-transmissive region 210, and a light shielding region.
  • the semi-transmissive region 210 and the edge of the light-shielding region 230 are adjacent to the edge of the light-shielding region 230 to add a plurality of thin lines 212 reflective material layer, the photomask 201 is exposed to the exposure, the plurality of thin lines 212 reflective material layer will
  • the semi-transmissive region 210 is adjacent to the edge of the light-shielding region 230 to generate slit light interference, and the plurality of photoresist layers 110 are caused.
  • D2 111,112 vias 150 one size larger than 20um formed; and a transparent electrode layer 120 disposed on the color filter layer 106.
  • a method for manufacturing an active switch array substrate 11 includes: providing a first substrate 100; forming a first insulating layer 105 on the first substrate 100. Forming a plurality of active switching units 130 On the first insulating layer 105, a plurality of photoresist layers 110, 111, 112 arranged in parallel are sequentially formed on the first insulating layer 105 to complete a color filter layer 106; a spacer 114 and a plurality of vias 105 on the color filter layer 106, including: forming a light shielding material layer on the color filter layer 106 to cover the color filter layer 106; A mask 201 is disposed on the light shielding material layer, the mask 201 has a light transmissive area 220, a light shielding area 230 and a half light transmission area 210; and an exposure manufacturing and a development manufacturing to pattern the light shielding material a plurality of photo spacers 114 and the via holes 105
  • a through hole 105 formed by one of 112, 112, 112 is greater than 20 um; and a transparent electrode layer 120 is formed.
  • the color filter layer 106 is described; wherein the light transmittance of the mask 201 is adjusted by adjusting the incorporation and distribution density of the low-reflection material.
  • the translucent area 210 has a light transmittance of 30% to 70%.
  • the low-reflective material is a group of chromium and its compounds.
  • the through hole 150 formed by one of the plurality of photoresist layers 110, 111, 112 is greater than 20 ⁇ m by the design of the semi-transmissive region 210.
  • the reticle 201 is a gray scale reticle, and a plurality of thin lines 212 reflective material layers are added to generate slit light interference, wherein the thin line width d3 and the spacing d4 are 1 to 5 um.
  • the photo spacers 114 form at least one step difference through the same mask 201.
  • a photomask 201 includes: a light transmissive region 220 having a light transmissive substrate; and a semi-transmissive region 210 disposed on the translucent substrate.
  • regions 230 which may be formed, for example, from a chromium or chromium compound, but are not limited thereto, may be formed of other metals or compounds of light absorbing properties.
  • the light transmittance of the photomask 201 is adjusted according to the incorporation and distribution density of a low-reflection material, so that the light transmittance of the semi-transmissive region 210 is lower than the light transmittance of the light-transmitting region 220. And higher than the light transmittance of the light shielding region 230.
  • the reflective material layer of the plurality of thin lines 212 causes the semi-transmissive region 210 to interfere with the edge of the opaque region 230 to generate slit light interference.
  • the plurality of thin lines 212 are reflective material layers, and the thin line width d3 and the gap d4 of the thin lines have a width of 1 to 5 um.
  • the semi-transmissive region 210 is formed with a semi-transmissive film that can penetrate the exposure light
  • the light-shielding region 230 is formed with a light-shielding film.
  • the plurality of thin lines 212 reflective material layer and the low reflective material are selected from the group consisting of chrome metal and its a group of compounds.
  • the translucent area 210 has a light transmittance of 30% to 70%.
  • the reticle 201 is a gray scale reticle, and a plurality of thin lines 212 reflective material layers are added to generate slit light interference, wherein the thin line width d3 and the spacing d4 are 1 to 5 um.
  • the multi-gray mask can be divided into two types: a gray-tone mask and a half tone mask.
  • the gray mask is to make a micro slit below the resolution of the exposure machine, and then a part of the light source is covered by the micro slit portion to achieve the effect of half exposure.
  • a halftone mask is a half-exposure using a "semi-transmissive" film. Since the above two methods can display three kinds of exposure levels of "exposure portion", "half-exposed portion” and "unexposed portion” after one exposure process, two kinds of thicknesses can be formed after development.
  • the pattern can be transferred to the panel substrate in a relatively small number of sheets, and the panel production efficiency is improved).
  • the cost of the mask will be slightly higher than that of a conventional mask.
  • This application can increase the aperture ratio of the pixel and reduce the cost of the mask.

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Abstract

一种光罩及其应用于主动开关阵列基板的制造方法，光罩（201）包括：一透光区（220），具有透光性的基材；一半透光区（210），设置于透光性的基材上，且由铬或铬化合物所形成；一遮光区（230），设置于透光性的基材上；以及多条细线反光材质层（212），设置于半透光区（210）和遮光区（230）之间，且由铬或铬化合物所形成；其中，光罩（201）的透光率依据一低反光材质的掺入及分布密度而调节，使半透光区（210）的透光率低于透光区（220）的透光率，且高于遮光区（230）的透光率。

Description

光罩及其应用于主动开关阵列基板的制造方法 技术领域
本申请涉及一种制造方式，特别是涉及一种光罩及其应用于主动开关阵列基板的制造方法。
背景技术
随着科技进步，具有省电、无幅射、体积小、低耗电量、平面直角、高分辨率、画质稳定等多项优势的液晶显示器，尤其是现今各种信息产品如：手机、笔记本电脑、数字相机、PDA、液晶屏幕等产品的普及，亦使得液晶显示器(LCD)的需求量大大提升。因此如何满足日益要求高分辨率的画素设计，且具有高画质、空间利用效率佳、低消耗功率、无辐射等优越特性的薄膜晶体管液晶显示器(thin film transistor liquid crystal display，TFT-LCD)已逐渐成为市场的主流。其中，主动开关阵列基板为组立液晶显示器的重要构件之一。
液晶显示器由一彩色滤光基板、主动开关阵列基板及二基板间充满液晶所构成，在较大尺寸液晶显示器中，其为维持二基板的间隙，在液晶层内分布多个间隔物以维持间隙高度保持二基板平行，另在液晶注入法以液晶真空注入法为主，但注入时间耗时，目前逐渐以滴下注入法(One Drop Fill，ODF)取代，对于间隔物的结构需要更新设计。已知技术以球型间隔物分布在液晶层间，此种结构在基板受到压力时，因间隔物滚动而破坏基板，或因为任意分布而位于画素区内产生不均匀分布，更因为间隔物的散射问题而影响产品良率，近年以微影技术形成间隔物(Photo Spacer，PS)，精确的控制间隔物的位置、大小及高度取代传统球型间隔物的构造。
而液晶显示器中间隙结构的功能在于控制显示器第一基板和第二基板的间隔。因为上下两片玻璃之间主要填入液晶材料。如果没有间隙结构的支撑，上下两片玻璃的间隔的均匀性无法很好地维持。然而，第一基板和第二基板间隔的均匀性对于维持液晶显示器的显示效果及其电讯质量有重要的影响。
而主动开关阵列基板有分为具有红绿蓝光阻层在对向基板中(RGB on CF)、在平面转换型的液晶面板中具有红绿蓝光阻层在主动开关阵列基板(RGB on Array/In-Plane Switching，IPS mode)及在垂直配向型的液晶面板中具有红绿蓝光阻层在主动开关阵列基板(RGB on Array/Vertical Alignment，VA mode)。如此一来，如何提高分辨率的画素设计，其中有关主动开关阵列基板的画素结构设计将扮演一个关键设计，且传统红绿蓝白光阻层四色液晶显示器，由于穿透率较高，目前已为多家面板厂COA or COT(Color on Array or Color on TFT)开发的技术，但需在红绿蓝白彩色光阻工艺后再加上光间隔物(Photo Spacer)工艺，故使用较多材料，管控困难，工艺流程繁复，设备投资较高，由于白色光阻与光间隔物皆属于透明材料，且白色光阻比光间隔物材料至少贵3成，故 有多家厂商极力开发以光间隔物取代白色光阻材料，但实际上由于光间隔物感亮度不够高，通孔的形成较小，因此需将白色光阻通孔尺寸加大50um以上以求曝出通孔>20um，如此一来会大大牺牲开口率，造成设计上的难度或影响制程良率。
发明内容
为了解决上述技术问题，本申请的目的在于，提供一种光罩及其应用于主动开关阵列基板的制造方法，将可以提升画素开口率与降低光罩成本。
本申请的目的及解决其技术问题是采用以下技术方案来实现的。依据本申请提出的一种光罩，所述光罩包括：一透光区，具有透光性的基材；一半透光区，设置于所述透光性的基材上，且由铬或铬化合物所形成；一遮光区，设置于所述透光性的基材上；以及多条细线反光材质层，设置于所述半透光区和所述遮光区之间；其中，所述光罩的透光率依据一低反光材质的掺入及分布密度而调节，使所述半透光区的透光率低于所述透光区的透光率，且高于所述遮光区的透光率。
本申请的另一目的一种主动开关阵列基板的制造方法，包括：提供一第一基底；形成一第一绝缘层于所述第一基底上；形成多个主动开关单元于所述第一绝缘层上；依序形成多个平行配置的光阻层于所述第一绝缘层上，以完成一彩色滤光层；同时形成多个光间隔物及多个通孔于所述彩色滤光层上，其包括：在所述彩色滤光层上形成一遮光材料层，以覆盖所述彩色滤光层；在所述遮光材料层上设置一光罩，所述光罩具有一透光区、一遮光区以及一半透光区；及进行一曝光制造以及一显影制造，以图案化所述遮光材料层，而形成所述多个光间隔物及该些通孔，所述半透光区与所述遮光区的边缘邻接处添加多条细线反光材质层，所述光罩接触曝光时，所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉，而使所述多个光阻层其一所形成的通孔大于20um；以及形成一透明电极层，在所述彩色滤光层上；其中，通过调节低反光材质的掺入及分布密度，调节所述光罩的透光率。
本申请的再一目的一种光罩，所述光罩包括：一透光区，具有透光性的基材；一半透光区，设置于所述透光性的基材上，且由铬或铬化合物所形成；一遮光区，设置于所述透光性的基材上；以及多条细线反光材质层，设置于所述半透光区和所述遮光区之间；所述多条细线反光材质层，其细线的细线宽度与间隙宽度为1～5um；所述光罩接触曝光时，所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉；所述半透光区形成有一部分可穿透曝光光的半透光膜，所述遮光区形成有具遮光性的膜；所述光罩的透光率依据一低反光材质的掺入及分布密度而调节；所述低反光材质为铬金属及其化合物所组成的群组，通过调节所述铬金属及其化合物的掺入量及分布密度，调节所述光罩的所述半透光区的透光率，其中所述半透光区的透光率介于30％到70％之间；其中所述遮光区含铬0％及所述透光区含铬约98％。
本申请解决其技术问题还可采用以下技术措施进一步实现。
在本申请的一实施例中，所述多条细线反光材质层，其细线的细线宽度与间隙宽度为1～5um。
在本申请的一实施例中，所述光罩接触曝光时，所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉。
在本申请的一实施例中，所述半透光区形成有一部分可穿透曝光光的半透光膜，所述遮光区形成有具遮光性的膜，所述半透光区的透光率介于30％到70％。
在本申请的一实施例中，所述多条细线反光材质层及所述低反光材质的材质是选自于铬金属及其化合物所组成的群组。
在本申请的一实施例中，所述制造方法，所述低反光材质为铬及其化合物所组成的群组。
在本申请的一实施例中，所述制造方法，所述光罩为灰阶光罩，并添加多条细线反光材质层以产生狭缝光干涉。
在本申请的一实施例中，所述制造方法，所述多条细线宽及间距为1～5um。
有益效果
本申请可以提升画素开口率与降低光罩成本。
附图说明
图1a是范例性的具有红绿蓝光白阻层及光间隔物在主动开关阵列基板中横截面示意图。
图1b是范例性的具有红绿蓝白光阻层及光间隔物与光罩在主动开关阵列基板中横截面示意图。
图2a是依据本申请的方法，具有红绿蓝白光阻层及光间隔物与光罩在主动开关阵列基板中横截面示意图。
图2b是依据本申请的方法，具有红绿蓝白光阻层及光间隔物在主动开关阵列基板中横截面示意图。
图3是依据本申请的方法，具有反光材质层细线与间隙图案示意图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。
附图和说明被认为在本质上是示出性的，而不是限制性的。在图中，结构相似的单元是以相同标号表示。另外，为了理解和便于描述，附图中示出的每个组件的尺寸和厚度是任意示出的，但是本申请不限于此。
在附图中，为了清晰起见，夸大了层、膜、面板、区域等的厚度。在附图中，为了理解和便于描述，夸大了一些层和区域的厚度。将理解的是，当例如层、膜、区域或基底的组件被称作“在”另一组件“上”时，所述组件可以直接在所述另一组件上，或者也可以存在中间组件。
另外，在说明书中，除非明确地描述为相反的，否则词语“包括”将被理解为意指包括所述组件，但是不排除任何其它组件。此外，在说明书中，“在......上”意指位于目标组件上方或者下方，而不意指必须位于基于重力方向的顶部上。
为更进一步阐述本申请为达成预定发明目的所采取的技术手段及功效，以下结合附图及较佳实施例，对依据本申请提出的一种光罩及其应用于主动开关阵列基板的制造方法，其具体实施方式、结构、特征及其功效，详细说明如后。
本申请的液晶面板可包括主动开关(例如Thin Film Transistor，TFT)基板、彩色滤光层(Color Filter，CF)基板与形成于两基板之间的液晶层。
在一实施例中，本申请的液晶面板可为曲面型显示面板。
在一实施例中，本申请的主动开关(如TFT)及彩色滤光层(CF)可形成于同一基板上。
图1a为范例性的具有红绿蓝白光阻层及光间隔物在主动开关阵列基板中横截面示意图。请参照图1a，一种主动开关阵列基板10，包括：一第一基底100；一第一绝缘层105，设置在所述第一基底100上；多个主动开关单元130，设置在所述第一绝缘层105上；一彩色滤光层106，设置在所述第一绝缘层105上，并包括多个平行配置的第一光阻层110、第二光阻层111及第三光阻层112；多个光间隔物114，设置在所述彩色滤光层106上，其材料相同于该些第三光阻层112的材料，其中所述该些第三光阻层112具有至少一个通孔140；以及一透明电极层120，设置在所述彩色滤光层106上。
图1b为范例性的具有红绿蓝白光阻层及光间隔物与光罩在主动开关阵列基板中横截面示意图。请参照图1a及图1b，一种主动开关阵列基板10，包括：一第一基底100；一第一绝缘层105，设置在所述第一基底100上；多个主动开关单元130，设置在所述第一绝缘层105上；一彩色滤光层106，设置在所述第一绝缘层105上，并包括多个平行配置的第一光阻层110、第二光阻层111及第三光阻层112；多个光间隔物114，设置在所述彩色滤光层106上，其材料相同于该些第三光阻层112的材料，其中所述该些第三光阻层112具有至少一个通孔140且所述通孔140尺寸为d1；以及一透明电极层120，设置在所述彩色滤光层106上。
在一实施例中，一光罩200，包括：一含铬0％的遮光区230、一含铬约98％的透光区220及一半透光区210。
图2a为依据本申请的方法，具有红绿蓝白光阻层及光间隔物与光罩在主动开关阵列基板中横 截面示意图及图2b依据本申请的方法，具有红绿蓝白光阻层及光间隔物在主动开关阵列基板中横截面示意图。请参照图2b，一种主动开关阵列基板11，包括：一第一基底100；一第一绝缘层105，设置在所述第一基底100上；多个主动开关单元130，设置在所述第一绝缘层105上；一彩色滤光层106，设置在所述第一绝缘层105上，并包括多个平行配置的第一光阻层110、第二光阻层111及第三光阻层112；多个光间隔物114，设置在所述彩色滤光层106上，其材料相同于该些第三光阻层112的材料，其中所述该些第三光阻层112具有至少一个通孔150；以及一透明电极层120，设置在所述彩色滤光层106上。
请参照图2a及图2b，在本申请一实施例中，一种主动开关阵列基板11，包括：一第一基底100；一第一绝缘层105，设置在所述第一基底100上；多个主动开关单元130，设置在所述第一绝缘层105上；一彩色滤光层106，设置在所述第一绝缘层105上，并包括多个平行配置的第一光阻层110、第二光阻层111及第三光阻层112；多个光间隔物114，设置在所述彩色滤光层106上，其材料相同于该些第三光阻层112的材料，其中所述该些第三光阻层112具有至少一个通孔150且所述通孔150尺寸为d2；以及一透明电极层120，设置在所述彩色滤光层106上。
在一实施例中，所述通孔150尺寸d2大于20um。
在一实施例中，所述光间隔物114与所述第三光阻层112为相同材料一体成型。
在一实施例中，所述光间隔物114与所述第三光阻层112的组合外形为一上窄下宽的凸起外形。
在一实施例中，一光罩201，包括：一含铬0％的遮光区230、一含铬约98％的透光区220、一半透光区210以及多条细线212反光材质层以产生狭缝光干涉，其中细线宽d3及间距d4为1～5um。
请参照图2a及图2b，在本申请一实施例中，一种主动开关阵列基板11，包括：一第一基底100；一第一绝缘层105，设置在所述第一基底100上；多个主动开关单元130，设置在所述第一绝缘层105上；一彩色滤光层106，设置在所述第一绝缘层105上，并包括多个光阻层110、111、112；多个光间隔物114，设置在所述彩色滤光层106上，其材料相同于所述多个光阻层110、111、112其一(举例：白色光阻层)的材料；其中所述多个光阻层110、111、112其一及所述多个光间隔物114的形成是通过一光罩201进行曝光，所述光罩201具有透光区220、半透光区210、及遮光区230，所述半透光区210与所述遮光区230的边缘邻接处添加多条细线212反光材质层，所述光罩201接触曝光时，所述多条细线212反光材质层会使所述半透光区210与所述遮光区230的边缘邻接处产生狭缝光干涉，而使所述多个光阻层110、111、112其一所形成的通孔150尺寸d2大于20um；以及一透明电极层120，设置在所述彩色滤光层106上。
请参照图2a及图2b，在本申请一实施例中，一种主动开关阵列基板11的制造方法，包括：提供一第一基底100；形成一第一绝缘层105于所述第一基底100上；形成多个主动开关单元130 于所述第一绝缘层105上；依序形成多个平行配置的光阻层110、111、112于所述第一绝缘层105上，以完成一彩色滤光层106；同时形成多个光间隔物114及多个通孔105于所述彩色滤光层106上，其包括：在所述彩色滤光层106上形成一遮光材料层，以覆盖所述彩色滤光层106；在所述遮光材料层上设置一光罩201，所述光罩201具有一透光区220、一遮光区230以及一半透光区210；及进行一曝光制造以及一显影制造，以图案化所述遮光材料层，而形成所述多个光间隔物114及该些通孔105，所述半透光区210与所述遮光区230的边缘邻接处添加多条细线212反光材质层，所述光罩201接触曝光时，所述多条细线212反光材质层会使所述半透光区210与所述遮光区230的边缘邻接处产生狭缝光干涉，而使所述多个光阻层110、111、112其一112所形成的通孔105大于20um；以及形成一透明电极层120，在所述彩色滤光层106上；其中，通过调节低反光材质的掺入及分布密度，调节所述光罩201的透光率。
在一实施例中，所述半透光区210的透光率介于30％到70％。
在一实施例中，所述低反光材质为铬及其化合物所组成的群组。
在一实施例中，通过所述半透光区210的设计，使得所述多个光阻层110、111、112之一112所形成的通孔150大于20μm。
在一实施例中，所述光罩201为灰阶光罩，并添加多条细线212反光材质层以产生狭缝光干涉，其中细线宽d3及间距d4为1～5um。
在一实施例中，该些光间隔物114是通过相同的光罩201而形成至少一种段差。
图3为依据本申请的方法，具有反光材质层细线与间隙图案示意图。请参照图3、图2a及图2b，一种光罩201，包括：一透光区220，具有透光性的基材；一半透光区210，设置于所述透光性的基材上，且由铬或铬化合物所形成；一遮光区230，设置于所述透光性的基材上；以及多条细线212反光材质层，设置于所述半透光区210和所述遮光区230之间，其可例如由铬或铬化合物所形成，但不限于此，亦可以由其他吸光性质的金属或化合物所形成。其中，所述光罩201的透光率依据一低反光材质的掺入及分布密度而调节，使所述半透光区210的透光率低于所述透光区220的透光率，且高于所述遮光区230的透光率。
在一实施例中，所述光罩201接触曝光时，所述多条细线212反光材质层会使所述半透光区210与所述遮光区230的边缘邻接处产生狭缝光干涉。
在一实施例中，所述多条细线212反光材质层，其细线的细线宽度d3与间隙d4宽度为1～5um。
在一实施例中，所述半透光区210形成有一部分可穿透曝光光的半透光膜，所述遮光区230形成有具遮光性的膜。
在一实施例中，所述多条细线212反光材质层及所述低反光材质的材质是选自于铬金属及其化 合物所组成的群组。
在一实施例中，所述半透光区210的透光率介于30％到70％。
在一实施例中，所述光罩201为灰阶光罩，并添加多条细线212反光材质层以产生狭缝光干涉，其中细线宽d3及间距d4为1～5um。
在不同实施例中，多灰阶光罩，可分为灰色光罩(Gray-tone mask)和半色调光罩(Half tone mask)2种。灰色光罩是制作出曝光机分辨率以下的微缝，再藉由此微缝部位遮住一部份的光源，以达成半曝光的效果。另一方面，半色调光罩是利用「半透过」的膜，来进行半曝光。因为以上两种方式皆是在1次的曝光过程后即可呈现出「曝光部分」「半曝光部分」及「未曝光部分」3种的曝光层次，故在显影后能够形成2种厚度的光阻(藉由利用这样的光阻厚度差异、便可以较一般少的片数下将图形转写至面板基板上，并达成面板生产効率的提升)。若为半色调光罩则光罩成本会略高于一般光罩。
本申请可以提升画素开口率与降低光罩成本。
“在一些实施例中”及“在各种实施例中”等用语被重复地使用。此用语通常不是指相同的实施例；但它亦可以是指相同的实施例。“包含”、“具有”及“包括”等用词是同义词，除非其前后文意显示出其它意思。
以上所述，仅是本申请的较佳实施例而已，并非对本申请作任何形式上的限制，虽然本申请已以较佳实施例揭露如上，然而并非用以限定本申请，任何熟悉本专业的技术人员，在不脱离本申请技术方案范围内，当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本申请技术方案的内容，依据本申请的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本申请技术方案的范围内。

Claims (13)

  1. 一种光罩，包括：
    一透光区，具有透光性的基材；
    一半透光区，设置于所述透光性的基材上，且由铬或铬化合物所形成；
    一遮光区，设置于所述透光性的基材上；以及
    多条细线反光材质层，设置于所述半透光区和所述遮光区之间；
    其中，所述光罩的透光率依据一低反光材质的掺入及分布密度而调节，使所述半透光区的透光率低于所述透光区的透光率，且高于所述遮光区的透光率。
  2. 如权利要求1所述的光罩，其中所述多条细线反光材质层的细线宽度为1～5um。
  3. 如权利要求1所述的光罩，其中所述多条细线反光材质层，其细线间的间隙宽度为1～5um。
  4. 如权利要求1所述的光罩，其中所述光罩接触曝光时，所述多条细线反光材质层使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉。
  5. 如权利要求1所述的光罩，其中所述半透光区形成有一部分可穿透曝光光的半透光膜，所述遮光区形成有具遮光性的膜。
  6. 如权利要求5所述的光罩，其中所述半透光区的透光率介于30％到70％。
  7. 如权利要求1所述的光罩，其中所述多条细线反光材质层及所述低反光材质的材质是选自于铬金属及其化合物所组成的群组。
  8. 一种主动开关阵列基板的制造方法，包括：
    提供一第一基底；
    形成一第一绝缘层于所述第一基底上；
    形成多个主动开关单元于所述第一绝缘层上；
    依序形成多个平行配置的光阻层于所述第一绝缘层上，以完成一彩色滤光层；
    同时形成多个光间隔物及多个通孔于所述彩色滤光层上，其包括：
    在所述彩色滤光层上形成一遮光材料层，以覆盖所述彩色滤光层；
    在所述遮光材料层上设置一光罩，所述光罩具有一透光区、一遮光区以及一半透光区；及
    进行一曝光制造以及一显影制造，以图案化所述遮光材料层，而形成所述多个光间隔物及该些通孔，其中，所述半透光区与所述遮光区的边缘邻接处添加多条细线反光材质层，所述光罩接触曝光时，所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉，而使所述多个光阻层其一所形成的通孔大于20um；以及
    形成一透明电极层，在所述彩色滤光层上；
    其中，通过调节低反光材质的掺入及分布密度，调节所述光罩的透光率。
  9. 如权利要求8所述的主动开关阵列基板的制造方法，其中所述低反光材质为铬及其化合物所组成的群组。
  10. 如权利要求8所述的主动开关阵列基板的制造方法，其中所述光罩为灰阶光罩，并添加多条细线反光材质层以产生狭缝光干涉。
  11. 如权利要求8所述的主动开关阵列基板的制造方法，其中所述多条细线反光材质层的细线宽度为1～5um。
  12. 如权利要求8所述的主动开关阵列基板的制造方法，其中所述多条细线反光材质层，其细线间的间隙宽度为1～5um。
  13. 一种光罩，包括：
    一透光区，具有透光性的基材；
    一半透光区，设置于所述透光性的基材上，且由铬或铬化合物所形成；
    一遮光区，设置于所述透光性的基材上；以及
    多条细线反光材质层，设置于所述半透光区和所述遮光区之间；
    其中，所述多条细线反光材质层，其细线的细线宽度与间隙宽度为1～5um；
    其中，所述光罩接触曝光时，所述多条细线反光材质层会使所述半透光区与所述遮光区的边缘邻接处产生狭缝光干涉；
    其中，所述半透光区形成有一部分可穿透曝光光的半透光膜，所述遮光区形成有具遮光性的膜；
    其中，所述光罩的透光率依据一低反光材质的掺入及分布密度而调节；
    其中，所述低反光材质为铬金属及其化合物所组成的群组，通过调节所述铬金属及其化合物的掺入量及分布密度，调节所述光罩的所述半透光区的透光率，其中所述半透光区的透光率介于30％到70％之间；其中所述遮光区含铬0％及所述透光区含铬约98％。
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