WO2020037741A1 - Tft阵列基板及其制作方法 - Google Patents
Tft阵列基板及其制作方法 Download PDFInfo
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Abstract
一种TFT阵列基板及其制作方法,TFT阵列基板包括TFT阵列层(11)、彩色滤光层(12)和钝化层(13),彩色滤光层(12)包括蓝色子像素(123),钝化层(13)包括钝化层本体(131)和凸设在钝化层本体(131)上的凸部(132),通过在彩色滤光层(12)的蓝色子像素(123)的两侧区域形成钝化层(13)的凸部(132),增加了蓝色子像素(123)两侧区域的光阻,使得钝化层(13)厚度均匀化,进而减少色度差异。
Description
本申请涉及一种显示技术领域,特别涉及一种TFT阵列基板及其制作方法。
液晶显示装置(Liquid Crystal Display,LCD)具有机身薄、省电、无辐射等众多优点,得到了广泛的应用。比如液晶电视、移动电话、PDA、计算机屏幕和笔记本电脑屏幕等。
通常薄膜晶体管液晶显示器包括彩色滤光片和薄膜晶体管阵列基板(TFT基板)以及液晶层。其中,彩色滤光片提供红/绿/蓝色彩,目前采用光刻胶进行制作。
因为光刻胶的流平性问题,导致实际制作出的子像素的图形呈凹形(bowl shape),凹陷的幅度超过0.5微米,导致子像素中心位置和边缘位置色度差异过大,大于0.004,规格为±0.002,导致产品色彩不佳,其中以蓝色子像素最为明显。
本申请实施例提供一种TFT阵列基板及其制作方法;以解决现有的TFT阵列基板的蓝色子像素呈凹形,导致蓝色子像素中心位置和边缘位置色度差异过大,从而影响产品色彩的技术问题。
本申请实施例提供一种TFT阵列基板,其包括:
TFT阵列层;
彩色滤光层,设置在所述TFT阵列层上,包括多个色阻单元,所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶,且对应形成红色子像素、绿色子像素和蓝色子像素,蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度;
钝化层,设置在所述彩色滤光层上,包括覆盖所述彩色滤光层的钝化层本体和凸设在所述钝化层本体上的凸部;以及
像素电极层,设置在所述钝化层上;
其中所述凸部对应设置在所述蓝色子像素两侧区域的上方,所述凸部的厚度为0.3微米~0.5微米,所述凸部的宽度为所述蓝色子像素宽度的1/5~1/4。
在本申请的TFT阵列基板中,所述凸部的截面形状为矩形。
在本申请的TFT阵列基板中,所述钝化层的材料为可溶性聚四氟乙烯。
本申请实施例提供另一种TFT阵列基板,其包括:
TFT阵列层;
彩色滤光层,设置在所述TFT阵列层上,包括多个色阻单元,所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶,且对应形成红色子像素、绿色子像素和蓝色子像素,蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度;
钝化层,设置在所述彩色滤光层上,包括覆盖所述彩色滤光层的钝化层本体和凸设在所述钝化层本体上的凸部;以及
像素电极层,设置在所述钝化层上;
其中所述凸部对应设置在所述蓝色子像素两侧区域的上方。
在本申请的另一TFT阵列基板中,所述凸部的厚度为0.3微米~0.5微米。
在本申请的另一TFT阵列基板中,所述凸部的宽度为蓝色子像素宽度的1/5~1/4。
在本申请的另一TFT阵列基板中,所述凸部的截面形状为矩形。
在本申请的另一TFT阵列基板中,所述钝化层的材料为可溶性聚四氟乙烯。
本申请还涉及一种TFT阵列基板的制作方法,其包括:
S1:提供一衬底基板,在所述衬底基板上形成TFT阵列层;
S2:在所述TFT阵列层上形成多个色阻单元,得到彩色滤光层,所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶,对应形成红色子像素、绿色子像素和蓝色子像素,蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度;
S3:在所述彩色滤光层上涂布光刻胶;
S4:通过半色调掩模板对所述光刻胶进行图案化处理,得到钝化层,以使所述钝化层对应于所述蓝色子像素两侧区域的位置形成一凸部,
所述钝化层包括覆盖所述彩色滤光层的钝化层本体和设置在所述钝化层本体上的所述凸部;
S5:在所述钝化层上形成像素电极层。
在本申请的TFT阵列基板的制作方法中,所述半色调掩模板包括第一透光部和第二透光部,所述第一透光部的透光率大于所述第二透光部的透光率,所述光刻胶为负性光刻胶,所述步骤S4包括以下步骤:
S41:将所述第一透光部设置在所述光刻胶对应于所述蓝色子像素的两侧区域的上方,将所述第二透光部设置在所述光刻胶对应于除所述蓝色子像素两侧区域外的其他区域的上方;
S42:透过所述半色调掩模板对所述光刻胶进行曝光和显影处理,得到钝化层,所述钝化层包括覆盖所述彩色滤光层的钝化层本体和对应于所述蓝色子像素两侧区域的凸部。
在本申请的TFT阵列基板的制作方法中,所述凸部的厚度为0.3微米~0.5微米。
在本申请的TFT阵列基板的制作方法中,所述凸部的宽度为蓝色子像素宽度的1/5~1/4。
在本申请的TFT阵列基板的制作方法中,所述凸部的截面形状为矩形。
在本申请的TFT阵列基板的制作方法中,所述钝化层的材料为可溶性聚四氟乙烯。
在本申请的TFT阵列基板的制作方法中,所述TFT阵列层通过光刻工艺形成。
相较于现有技术的TFT阵列基板,本申请的TFT阵列基板及其制作方法通过在彩色滤光层的蓝色子像素的两侧区域形成钝化层的凸部,增加了蓝色子像素两侧区域的光阻,使得钝化层厚度均匀化,进而减少色度差异;另外,凸部可将蓝色光刻胶散射的光聚合,减少光透过率的损失;解决了现有的TFT阵列基板的蓝色子像素呈凹形,导致蓝色子像素中心位置和边缘位置色度差异过大,从而影响产品色彩的技术问题。
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面对实施例中所需要使用的附图作简单的介绍。下面描述中的附图仅为本申请的部分实施例,对于本领域普通技术人员而言,在不付出创造性劳动的前提下,还可以根据这些附图获取其他的附图。
图1为本申请的TFT阵列基板的实施例的结构示意图;
图2为本申请的TFT阵列基板的制作方法的实施例的流程图;
图3为本申请的TFT阵列基板的制作方法的实施例的步骤S1的示意图;
图4为本申请的TFT阵列基板的制作方法的实施例的步骤S2的示意图;
图5为本申请的TFT阵列基板的制作方法的实施例的步骤S3的示意图;
图6为本申请的TFT阵列基板的制作方法的实施例的步骤S4的示意图;
图7为本申请的TFT阵列基板的制作方法的实施例中钝化层对应的掩膜板的结构示意图;
图8为本申请的TFT阵列基板的制作方法的实施例的步骤S5的示意图。
请参照附图中的图式,其中相同的组件符号代表相同的组件。以下的说明是基于所例示的本申请具体实施例,其不应被视为限制本申请未在此详述的其它具体实施例。
请参照图1,图1为本申请的TFT阵列基板的实施例的结构示意图。
本申请的实施例的TFT阵列基板包括TFT阵列层11、彩色滤光层12、钝化层13和像素电极层14。
具体的,彩色滤光层12设置在TFT阵列层11上,其包括多个色阻单元。多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶,且对应形成红色子像素121、绿色子像素122和蓝色子像素123。蓝色子像素123两侧区域12a的厚度大于蓝色子像素123中间区域的厚度。钝化层13设置在彩色滤光层12上。钝化层13包括覆盖彩色滤光层12的钝化层本体131和凸设在钝化层本体131上的凸部132。像素电极层14设置在钝化层13上。
其中,凸部132对应设置在蓝色子像素123两侧区域12a的上方。
本申请的TFT阵列基板通过在彩色滤光层12的蓝色子像素123的两侧区域12a形成钝化层13的凸部132,增加了蓝色子像素123两侧区域12a的光阻,使得钝化层13整体的厚度均匀化,进而减少色度差异;另外,凸部132可将蓝色光刻胶散射的光聚合,减少光透过率的损失。
另外,彩色滤光层12中对于填充红色光刻胶、绿色光刻胶和蓝色光刻胶的顺序不做限定。
在本申请的TFT阵列基板的实施例中,凸部132的厚度为0.3微米~0.5微米。凸部132的主要作用在于增加蓝色子像素123两侧区域12a的光阻并将蓝色子像素123散射的光聚合,以减少光透过率的损失。当凸部132的厚度小于0.3微米时,凸部132所增加的光阻不足,仍然会出现蓝色子像素的两侧区域和中间区域存在色度差异;当凸部132的厚度大于0.5微米时,凸部132对蓝色子像素123增加的色阻过大,同样导致蓝色子像素的两侧区域和中间区域存在色度差异;因此当凸部132的厚度为0.3微米~0.5微米时,凸部132增加蓝色子像素123两侧区域12a的光阻正好可以弥补蓝色子像素123的两侧区域12a和中间区域的色度差异,从而达到色度均匀化的目的。
而在实际制作中,蓝色子像素的两侧区域的厚度可能会不同,因此,最优的方案是相对的凸部132的厚度也应该相对不同,但是由于现在工艺的限制,凸部132的厚度采用一致处理方案,即取相对于蓝色子像素的两侧区域的两个凸部中,满足两侧区域中最高厚度所对应的凸部,作为整体凸部厚度的厚度值。
凸部132的截面形状为矩形。
另外,凸部132的宽度为蓝色子像素123宽度的1/5~1/4。由于蓝色子像素的两侧区域12a存在色度差异较大部分的宽度为蓝色子像素123宽度的1/5~1/4,其他区域可以忽略不计。因此针对该范围进行增加蓝色子像素两侧区域的色阻,故将凸部132的宽度设定为蓝色子像素123宽度的1/5~1/4。
在本申请的TFT阵列基板的实施例中,钝化层13的材料为可溶性聚四氟乙烯。
请参照图2-图8,本申请还涉及一种TFT阵列基板的制作方法,所述制作方法的步骤包括:
S1:提供一衬底基板,在所述衬底基板上形成TFT阵列层;
S2:在所述TFT阵列层上形成多个色阻单元,得到彩色滤光层,
所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶,对应形成红色子像素、绿色子像素和蓝色子像素,蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度;
S3:在所述彩色滤光层上涂布光刻胶;
S4:通过半色调掩模板对所述光刻胶进行图案化处理,得到钝化层,以使所述钝化层对应于所述蓝色子像素两侧区域的位置形成一凸部,
所述钝化层包括覆盖所述彩色滤光层的钝化层本体和设置在所述钝化层本体上的所述凸部;
S5:在所述钝化层上形成像素电极层。
在步骤S1中,请参照图3,通过成膜、黄光、蚀刻等一系列制程一次在衬底基板(图未示出)上形成TFT阵列层11。
在步骤S2中,请参照图4,在TFT阵列层11上依次形成多个色阻单元,得到彩色滤光层12,多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶,对应形成红色子像素121、绿色子像素122和蓝色子像素123,蓝色子像素123两侧区域12a的厚度大于蓝色子像素123中间区域的厚度。
具体的,通过光刻制程,在TFT阵列层11上形成彩色滤光层12。彩色滤光层12中对于填充红色光刻胶、绿色光刻胶和蓝色光刻胶的顺序不做限定。
在步骤S3中,请参照图5,在彩色滤光层12上涂布光刻胶,用于形成钝化层13,其中光刻胶为负性光刻胶或正性光刻胶均可,在本申请中的实施例中以负性光刻胶为例进行说明。
在步骤S4中,请参照图6,通过半色调掩模板对光刻胶图案化处理,得到具有不同厚度部分的钝化层13。其中钝化层13对应于蓝色子像素123两侧区域12a的位置形成一凸部132,以增加蓝色子像素123两侧区域12a的色阻;钝化层13的其他区域的高度小于对应蓝色子像素123两侧区域的高度,以使钝化层13对应于整个蓝色子像素123的厚度均匀化,从而达到均化色度的效果。
因此,钝化层13包括覆盖彩色滤光层12的钝化层本体131和设置在钝化层本体131上的凸部132,其中钝化层本体131和凸部132之间存在高度差,即凸部132的高度高于钝化层本体131的高度。
其中,凸部132的厚度为0.3微米~0.5微米。凸部132的宽度为蓝色子像素123宽度的1/5~1/4。凸部132的截面形状为矩形。
具体的,请一并参照图7,半色调掩模板20包括第一透光部21和第二透光部22。第一透光部21的透光率大于第二透光部22的透光率。在本实施例中,第一透光部21为全透光,第二透光部22的透光率大于0。步骤S4包括以下步骤:
步骤S41:将第一透光部21设置在光刻胶对应于蓝色子像素123的两侧区域12a的上方,将第二透光部22设置在光刻胶对应于除蓝色子像素123两侧区域12a外的其他区域的上方;
步骤S42:透过半色调掩模板20对光刻胶进行曝光和显影处理,得到钝化层13。钝化层13包括覆盖彩色滤光层12的钝化层本体131和对应于蓝色子像素123两侧区域12a的凸部132。
通过半色调掩模板20对光刻胶进行图案化处理,得到对应于蓝色子像素123两侧区域12a的钝化层132的凸部132。一方面增加了蓝色子像素123两侧区域12a的光阻,使得钝化层13厚度均匀化,进而减少色度差异;另一方面,凸部132可将蓝色光刻胶(蓝色子像素)散射的光聚合,减少光透过率的损失,提高了产品的色彩表现。
在步骤S5中,请参照图8,在钝化层13上形成像素电极层14。
至此,TFT阵列基板已制作完毕。
本申请还提供一种具有上述实施例的TFT阵列基板的COA型液晶显示面板。所述COA液晶显示面板包括上基板、TFT阵列基板和设置在上基板和TFT阵列基板之间的液晶层。
其中COA(Color
filter On Array)技术是一种将彩色滤光片基板的色阻层制备于TFT阵列基板上的技术,即将彩色滤光层与TFT阵列层设置在同侧。
相较于现有技术的TFT阵列基板,本申请的TFT阵列基板及其制作方法通过在彩色滤光层的蓝色子像素的两侧区域形成钝化层的凸部,增加了蓝色子像素两侧区域的光阻,使得钝化层厚度均匀化,进而减少色度差异;另外,凸部可将蓝色光刻胶散射的光聚合,减少光透过率的损失,且提高了产品的色彩表现质量;解决了现有的TFT阵列基板的蓝色子像素呈凹形,导致蓝色子像素中心位置和边缘位置色度差异过大,从而影响产品色彩的技术问题。
虽然本申请已以实施例揭露如上,实施例前的序号,如“第一”、“第二”等仅为描述方便而使用,对本申请各实施例的顺序不造成限制。并且,上述实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (15)
- 一种TFT阵列基板,其包括:TFT阵列层;彩色滤光层,设置在所述TFT阵列层上,包括多个色阻单元,所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶,且对应形成红色子像素、绿色子像素和蓝色子像素,蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度;钝化层,设置在所述彩色滤光层上,包括覆盖所述彩色滤光层的钝化层本体和凸设在所述钝化层本体上的凸部;以及像素电极层,设置在所述钝化层上;其中所述凸部对应设置在所述蓝色子像素两侧区域的上方,所述凸部的厚度为0.3微米~0.5微米,所述凸部的宽度为所述蓝色子像素宽度的1/5~1/4。
- 根据权利要求1所述的TFT阵列基板,其中,所述凸部的截面形状为矩形。
- 根据权利要求1所述的TFT阵列基板,其中,所述钝化层的材料为可溶性聚四氟乙烯。
- 一种TFT阵列基板,其包括:TFT阵列层;彩色滤光层,设置在所述TFT阵列层上,包括多个色阻单元,所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶,且对应形成红色子像素、绿色子像素和蓝色子像素,蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度;钝化层,设置在所述彩色滤光层上,包括覆盖所述彩色滤光层的钝化层本体和凸设在所述钝化层本体上的凸部;以及像素电极层,设置在所述钝化层上;其中所述凸部对应设置在所述蓝色子像素两侧区域的上方。
- 根据权利要求4所述的TFT阵列基板,其中,所述凸部的厚度为0.3微米~0.5微米。
- 根据权利要求4所述的TFT阵列基板,其中,所述凸部的宽度为蓝色子像素宽度的1/5~1/4。
- 根据权利要求4所述的TFT阵列基板,其中,所述凸部的截面形状为矩形。
- 根据权利要求4所述的TFT阵列基板,其中,所述钝化层的材料为可溶性聚四氟乙烯。
- 一种TFT阵列基板的制作方法,其包括:S1:提供一衬底基板,在所述衬底基板上形成TFT阵列层;S2:在所述TFT阵列层上形成多个色阻单元,得到彩色滤光层;所述多个色阻单元分别填充红色光刻胶、绿色光刻胶和蓝色光刻胶,对应形成红色子像素、绿色子像素和蓝色子像素,蓝色子像素两侧区域的厚度大于蓝色子像素中间区域的厚度;S3:在所述彩色滤光层上涂布光刻胶;S4:通过半色调掩模板对所述光刻胶进行图案化处理,得到钝化层,以使所述钝化层对应于所述蓝色子像素两侧区域的位置形成一凸部;所述钝化层包括覆盖所述彩色滤光层的钝化层本体和设置在所述钝化层本体上的所述凸部;S5:在所述钝化层上形成像素电极层。
- 根据权利要求9所述的TFT阵列基板的制作方法,其中,所述半色调掩模板包括第一透光部和第二透光部,所述第一透光部的透光率大于所述第二透光部的透光率,所述光刻胶为负性光刻胶,所述步骤S4包括以下步骤:S41:将所述第一透光部设置在所述光刻胶对应于所述蓝色子像素的两侧区域的上方,将所述第二透光部设置在所述光刻胶对应于除所述蓝色子像素两侧区域外的其他区域的上方;S42:透过所述半色调掩模板对所述光刻胶进行曝光和显影处理,得到钝化层,所述钝化层包括覆盖所述彩色滤光层的钝化层本体和对应于所述蓝色子像素两侧区域的凸部。
- 根据权利要求9所述的TFT阵列基板的制作方法,其中,所述凸部的厚度为0.3微米~0.5微米。
- 根据权利要求9所述的TFT阵列基板的制作方法,其中,所述凸部的宽度为蓝色子像素宽度的1/5~1/4。
- 根据权利要求9所述的TFT阵列基板的制作方法,其中,所述凸部的截面形状为矩形。
- 根据权利要求9所述的TFT阵列基板的制作方法,其中,所述钝化层的材料为可溶性聚四氟乙烯。
- 根据权利要求9所述的TFT阵列基板的制作方法,其中,所述TFT阵列层通过光刻工艺形成。
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