WO2018176603A1 - 光罩及其主动开关阵列基板的制造方法 - Google Patents

光罩及其主动开关阵列基板的制造方法 Download PDF

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Publication number
WO2018176603A1
WO2018176603A1 PCT/CN2017/084669 CN2017084669W WO2018176603A1 WO 2018176603 A1 WO2018176603 A1 WO 2018176603A1 CN 2017084669 W CN2017084669 W CN 2017084669W WO 2018176603 A1 WO2018176603 A1 WO 2018176603A1
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Prior art keywords
light
reticle
semi
region
array substrate
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PCT/CN2017/084669
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English (en)
French (fr)
Inventor
陈猷仁
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惠科股份有限公司
重庆惠科金渝光电科技有限公司
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Priority to US15/550,698 priority Critical patent/US10678128B2/en
Publication of WO2018176603A1 publication Critical patent/WO2018176603A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13398—Spacer materials; Spacer properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate

Definitions

  • the present application relates to a photomask for actively switching an array substrate, and more particularly to a photomask and a method for manufacturing the active switch array substrate thereof.
  • the liquid crystal display is composed of a color filter substrate, an active switch array substrate and a liquid crystal filled between the two substrates.
  • the gap between the two substrates is maintained, and a plurality of spacers are distributed in the liquid crystal layer to maintain the gap.
  • the height of the two substrates is kept parallel, and the liquid crystal injection method is mainly liquid crystal vacuum injection method, but the injection time is time-consuming, and is currently replaced by a One Drop Fill (ODF), and the structure of the spacer needs to be updated.
  • ODF One Drop Fill
  • the known technique distributes spherical spacers between liquid crystal layers. This structure destroys the substrate due to the rolling of the spacer when the substrate is under pressure, or uneven distribution in the pixel region due to arbitrary distribution, and more because of the spacer. The scattering problem affects the yield of the product.
  • Photo Spacer (PS) has been formed by lithography technology, and the position, size and height of the spacer are precisely controlled to replace the structure of the conventional spherical spacer.
  • the function of the gap structure in the liquid crystal display is to control the interval between the first substrate and the second substrate of the display. Because the upper and lower pieces of glass are mainly filled with liquid crystal material. Without the support of the gap structure, the uniformity of the spacing between the upper and lower sheets of glass is not well maintained. However, the uniformity of the spacing between the first substrate and the second substrate has an important influence on maintaining the display effect of the liquid crystal display and its telecommunication quality.
  • the active switch array substrate has been developed for COA or COT (Color on Array or Color on TFT), but it needs to be added with a photo spacer after the red, green, blue and white color resist process. ) Process, so use more materials, difficult to control, complicated process, high equipment investment, because white photoresist and photo spacer are transparent materials, and white photoresist is at least 30% more expensive than photo spacer material, so there are Many manufacturers have been working hard to replace white photoresist materials with photo spacers. However, due to the low brightness of the photo spacers, the formation of via holes is small. Therefore, it is necessary to increase the size of white photoresist vias by more than 50 ⁇ m. The size of the through hole is larger than 20 ⁇ m, which will greatly sacrifice the aperture ratio, causing design difficulty or affecting the process yield.
  • an object of the present invention is to provide a photomask and a method for manufacturing the active switch array substrate, which can realize the use of the same material for the white photoresist and the photo spacer, and improve the pixel aperture ratio.
  • a photomask according to the present application includes: a light transmissive region; a light shielding region; and a semi-transmissive region disposed between the light transmissive region and the light shielding region; wherein The light transmittance of the mask is adjusted according to the incorporation and distribution density of a low-reflection material, so that the light transmittance of the semi-transmissive region is lower than the light transmittance of the light-transmitting region, and is higher than the light-shielding region. Light transmittance.
  • the semi-transmissive region has a light transmittance of 30% to 70%.
  • the low-reflective material is a group consisting of chromium and a compound thereof.
  • the low-reflective material is disposed on the reticle by physical vapor deposition.
  • the semi-transmissive region has a size of 40 ⁇ m.
  • the reticle is a full-surface reticle, and the reticle has no hollow design.
  • the reticle is a non-planar reticle, and the reticle has a hollow design.
  • Another object of the present application is a method for manufacturing an active switch array substrate, comprising: providing a first substrate; disposing a first insulating layer on the first substrate; and providing a plurality of active switching units in the first On the insulating layer; a plurality of parallel disposed photoresist layers are sequentially disposed on the first insulating layer to complete a color filter layer; and a plurality of photo spacers and a plurality of through holes are disposed in the color filter
  • the layer includes: providing a light shielding material layer on the color filter layer to cover the color filter layer; and providing a light cover on the light shielding material layer, the light mask having a light transmissive area a light-shielding region and a light-transmissive region; performing an exposure manufacturing and a development manufacturing to pattern the light-shielding material layer to form the plurality of photo spacers and the plurality of via holes; and providing a transparent electrode layer On the color filter layer; wherein the light transmittance of the reticle is adjusted
  • the translucent area has a light transmittance of 30% to 70%.
  • the low-reflection material is a group consisting of chromium and a compound thereof.
  • the manufacturing method is such that a through hole formed by one of the plurality of photoresist layers is greater than 20 ⁇ m by the design of the semi-transmissive region.
  • the material of the photoresist layer includes a white photoresist.
  • the material of the white photoresist is the same as the material of the photo spacer.
  • the semi-transmissive region has a size of 40 ⁇ m.
  • a further object of the present application is a photomask comprising: a light transmissive region; a light shielding region; and a semi-transmissive region disposed between the light transmissive region and the light shielding region, the semi-transmissive region
  • the size of the reticle is 40 ⁇ m; wherein the light transmittance of the reticle is adjusted according to the incorporation and distribution density of a low-reflection material; the low-reflection material is a group consisting of chrome metal and a compound thereof, by adjusting the Chrome And a blending amount and a distribution density of the compound, and adjusting a light transmittance of the semi-transmissive region of the reticle, wherein a transmittance of the semi-transmissive region is between 30% and 70%.
  • the photomask is used to manufacture an active switch array substrate.
  • the present application can realize that the white photoresist and the photo spacer use the same material and increase the pixel aperture ratio.
  • FIG. 1 is a schematic cross-sectional view of an exemplary active switch array substrate.
  • FIG. 2 is a schematic cross-sectional view of an exemplary reticle on an active switch array substrate.
  • FIG 3 is a schematic cross-sectional view of a photomask on an active switch array substrate according to an embodiment of the present application.
  • FIG. 4 is a schematic cross-sectional view of an active switch array substrate according to an embodiment of the present application.
  • FIG. 5 is a schematic cross-sectional view of a photomask for actively switching an array substrate according to an embodiment of the present application.
  • the word “comprising” is to be understood to include the component, but does not exclude any other component.
  • “on” means located above or below the target component, and does not mean that it must be on the top based on the direction of gravity.
  • the active switch (eg, TFT) array and the color filter layer (CF) of the present application may be formed on the same substrate.
  • an active switch array substrate 10 includes: a first substrate 100; a first insulating layer 105 disposed on the first substrate 100; and a plurality of active switch array units 130.
  • a color filter layer 106 is disposed on the first insulating layer 105, and includes a plurality of first photoresist layers 110, second photoresist layers 111 and a third photoresist layer 112; a plurality of photo spacers 114 disposed on the color filter layer 106, the material of the third photoresist layer 112 being the same as the material of the photo spacers 114;
  • the third photoresist layer 112 has at least one via hole 140 and the via hole 140 has a size d1; and a pixel electrode layer 120 is disposed on the color filter layer 106.
  • a mask 200 includes a light blocking area 230, a light transmitting area 220, and a half light transmitting area 210.
  • the third photoresist layer 112 may be a white photoresist layer, and the material of the white photoresist layer is the same as the material of the photo spacer 114 due to the sensitivity of the photo spacer 114.
  • the size d1 of the through hole 140 formed is made small, which is disadvantageous for the subsequent process.
  • a method for manufacturing the active switch array substrate 11 includes: providing a first substrate 100; disposing a first insulating layer 105 on the first substrate 100; and providing a plurality of active switching units
  • the first insulating layer 105 is disposed on the first insulating layer 105.
  • the first photoresist layer 110, the second photoresist layer 111, and the third photoresist layer 112 are disposed on the first insulating layer 105.
  • a color filter layer 106 is disposed.
  • the plurality of photo spacers 114 and the plurality of vias 150 are disposed on the color filter layer 106.
  • the method includes: disposing a light shielding material layer on the color filter layer 106, Covering the color filter layer 106; providing a mask 201 on the light shielding material layer; performing an exposure manufacturing and a development manufacturing to pattern the light shielding material layer to form the plurality of photo spacers 114 and the plurality of through holes 150; a transparent electrode layer 120 is disposed on the color filter layer 106; wherein the light transmittance of the mask 201 is adjusted by adjusting the blending amount and distribution density of the low-reflection material rate.
  • the photomask 201 has a light transmissive region 220 having a light transmittance of 98%, a light shielding region 230 having a light transmittance of 0%, and a light transmittance of between 1% and 98%.
  • the semi-transmissive region 210 and another semi-transmissive region 212 having a light transmittance of between 30% and 70%.
  • the low light reflecting material may be, for example, a group consisting of chromium metal (Cr) and a compound thereof, and the photomask is adjusted by adjusting the incorporation amount and distribution density of the chromium and its compound.
  • the third photoresist layer 112 may be a white photoresist layer, and the material of the white photoresist layer is the same as the material of the photo spacer 114; even if the sensitivity of the photo spacer 114 Lower, when the size d3 of the semi-transmissive region 212 is about 40 ⁇ m, the pass formed on the white photoresist layer can be made through the semi-transmissive region 212 and the design of the light-shielding region 230.
  • the size d2 of the hole 150 is larger than 20 ⁇ m, which facilitates the subsequent process and improves the yield of the finished product.
  • FIG. 5 is a schematic cross-sectional view of a photomask for actively switching an array substrate according to an embodiment of the present application.
  • a photomask 201 for manufacturing the active switch array substrate 11 includes: a light transmissive region 220 having a light transmittance of 98%, and a light shielding rate of 0%.
  • the semi-transmissive regions 212, 210 are disposed between the light-transmitting region 220 and the light-shielding region 230; wherein the reticle is transparent
  • the light rate is adjusted according to the blending amount and distribution density of a low-reflection material, so that the light transmittance of the semi-transmissive regions 212, 210 is lower than the light transmittance of the light-transmitting region 220, and is higher than the light blocking.
  • the light transmittance of the region 230 is adjusted according to the blending amount and distribution density of a low-reflection material, so that the light transmittance of the semi-transmissive regions 212, 210 is lower than the light transmittance of the light-transmitting region 220, and is higher than the light blocking.
  • the light transmittance of the region 230 is adjusted according to the blending amount and distribution density of a low-reflection material, so that the light transmittance of the semi-transmissive regions 212, 210 is lower than
  • the low-reflection material may be, for example, a group consisting of chromium metal (Cr) and a compound thereof, and the photomask is adjusted by adjusting the incorporation amount and distribution density of the chromium and its compound.
  • the semi-transmissive region 212 is formed with a semi-transmissive film that can penetrate a portion of the exposure light (for example, ultraviolet light, yellow light), and the transmittance of the semi-transmissive region 212 is Between 30% and 70%.
  • the reticle 201 is a full-surface reticle, and the reticle 201 does not have a hollow design.
  • the semi-transmissive region 210 is formed with a semi-transmissive film that can penetrate exposure light (for example, ultraviolet light, yellow light), and the translucent region 210 has a light transmittance of 1% to 98%.
  • the light shielding region 230 is formed with a light shielding film having light shielding, light blocking or light absorbing properties; the light transmission region 220 is formed with a light transmissive film that can penetrate exposure light (for example, ultraviolet light, yellow light).
  • the reticle 201 is a non-planar reticle, and the reticle 201 has a hollow design.
  • the semi-transmissive region 210 is formed with a semi-transmissive film that can penetrate exposure light (for example, ultraviolet light, yellow light), and the translucent region 210 has a light transmittance of 1% to 98%.
  • the light-shielding region 230 is formed with a light-shielding film that blocks light, blocks or absorbs light; the light-transmitting region 220 is hollowed out, and the exposure light (for example, ultraviolet light, yellow light) directly penetrates and is exposed to the exposure. Area.
  • the low-reflection material (for example, chrome metal and a compound thereof) may be disposed on the reticle 201 by physical vapor deposition (PVD); the physical vapor deposition method may be magnetic Controlled sputtering, ion plating, and the like.
  • PVD physical vapor deposition
  • the exposure light is exemplified by ultraviolet light, yellow light; it is a supplement to the present application, and is not limited to the present application, and the exposure light may also refer to other light sources.
  • the photomask is used to manufacture an active switch array substrate, and can also be used to manufacture other types of substrates or panels, such as a color filter substrate, a vertical alignment display panel, or a fringe field switch display panel. Etc., depending on the needs of the designer, this article does not limit.
  • the multi-gray mask can be, for example, a gray-tone mask and a half tone mask, but is not limited thereto.
  • the gray mask is a micro slit that is below the resolution of the exposure machine, and then a part of the light source is blocked by the micro slit portion to achieve a half exposure effect.
  • a halftone mask is a half-exposure using a "semi-transmissive" film. Since the above two methods can display three kinds of exposure levels of "exposure portion", "half-exposed portion” and "unexposed portion” after one exposure process, two kinds of thicknesses can be formed after development.
  • the pattern can be reduced in a smaller number of sheets Transfer to the panel substrate and achieve an increase in panel production efficiency.
  • the cost of the mask will be slightly higher than that of a conventional mask.
  • the beneficial effects of the present application are that the white photoresist can be used with the same material as the photo spacer, and the pixel aperture ratio can be improved.

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Abstract

一种光罩及其主动开关阵列基板的制造方法，光罩（201）包括：一透光区（220）；一遮光区（230）；以及一半透光区（210、212），设置于透光区和此遮光区之间；其中，光罩的透光率依据一低反光材质的掺入及分布密度而调节，使半透光区的透光率低于透光区的透光率，且高于遮光区的透光率。

Description

光罩及其主动开关阵列基板的制造方法 技术领域
本申请涉及一种用于主动开关阵列基板的光罩，特别涉及一种光罩及其主动开关阵列基板的制造方法。
背景技术
随着科技进步，具有省电、无幅射、体积小、低耗电量、平面直角、高分辨率、画质稳定等多项优势的液晶显示器，尤其是现今各种信息产品如：手机、笔记本电脑、数字相机、PDA、液晶屏幕等产品的普及，亦使得液晶显示器(LCD)的需求量大大提升。因此如何满足日益要求高分辨率的像素设计，且具有高画质、空间利用效率佳、低消耗功率、无辐射等优越特性的主动开关阵列液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)已逐渐成为市场的主流。其中，主动开关阵列基板为组立液晶显示器的重要构件之一。
液晶显示器由一彩色滤光基板、主动开关阵列基板及二基板间充满液晶所构成，在较大尺寸液晶显示器中，其为维持二基板的间隙，在液晶层内分布多个间隔物以维持间隙高度保持二基板平行，另在液晶注入法以液晶真空注入法为主，但注入时间耗时，目前逐渐以滴下注入法(One Drop Fill，ODF)取代，对于间隔物的结构需要更新设计。已知技术以球型间隔物分布在液晶层间，此种结构在基板受到压力时，因间隔物滚动而破坏基板，或因为任意分布而位于像素区内产生不均匀分布，更因为间隔物的散射问题而影响产品良率，近年以微影技术形成间隔物(Photo Spacer，PS)，精确的控制间隔物的位置、大小及高度取代传统球型间隔物的构造。
而液晶显示器中间隙结构的功能在于控制显示器第一基板和第二基板的间隔。因为上下两片玻璃之间主要填入液晶材料。如果没有间隙结构的支撑，上下两片玻璃的间隔的均匀性无法很好地维持。然而，第一基板和第二基板间隔的均匀性对于维持液晶显示器的显示效果及其电讯质量有重要的影响。
而主动开关阵列基板，目前已为多家面板厂COA or COT(Color on Array or Color on TFT)开发的技术，但需在红绿蓝白彩色光阻工艺后再加上光间隔物(Photo Spacer)工艺，故使用较多材料，管控困难，工艺流程繁复，设备投资较高，由于白色光阻与光间隔物皆属于透明材料，且白色光阻比光间隔物材料至少贵3成，故有多家厂商极力开发以光间隔物取代白色光阻材料，但实际上由于光间隔物感亮度不够高，通孔的形成较小，因此需将白色光阻通孔尺寸加大50μm以上以求曝出通孔的尺寸大于20μm，如此一来会大大牺牲开口率，造成设计上的难度或影响制程良率。
发明内容
为了解决上述技术问题，本申请的目的在于，提供一种光罩及其主动开关阵列基板的制造方法，可以实现白色光阻与光间隔物使用同一材料，并提高像素开口率。
本申请的目的及解决其技术问题是采用以下技术方案来实现的。依据本申请提出的一种光罩，所述光罩包括：一透光区；一遮光区；以及一半透光区，设置于所述透光区和所述遮光区之间；其中，所述光罩的透光率依据一低反光材质的掺入及分布密度而调节，使所述半透光区的透光率低于所述透光区的透光率，且高于所述遮光区的透光率。
在本申请的一实施例中，所述半透光区的透光率介于30％到70％。
在本申请的一实施例中，所述低反光材质为铬及其化合物所组成的群组。
在本申请的一实施例中，所述低反光材质通过物理气相沉积的方式，设置于所述光罩上。
在本申请的一实施例中，所述半透光区的尺寸为40μm。
在本申请的一实施例中，所述光罩为一整面状光罩，所述光罩不存在镂空设计。
在本申请的一实施例中，所述光罩为一非整面状光罩，所述光罩存在镂空设计。
本申请的另一目的为一种主动开关阵列基板的制造方法，包括：提供一第一基板；设置一第一绝缘层于所述第一基板上；设置多个主动开关单元于所述第一绝缘层上；依序设置多个平行配置的光阻层于所述第一绝缘层上，以完成一彩色滤光层；同时设置多个光间隔物及多个通孔于所述彩色滤光层上，其包括：设置一遮光材料层于所述彩色滤光层上，以覆盖所述彩色滤光层；设置一光罩于所述遮光材料层上，所述光罩具有一透光区、一遮光区以及一半透光区；进行一曝光制造以及一显影制造，以图案化所述遮光材料层，而形成所述多个光间隔物及所述多个通孔；设置一透明电极层于所述彩色滤光层上；其中，通过调节低反光材质的掺入及分布密度，调节所述光罩的透光率。
在本申请的一实施例中，所述制造方法，所述半透光区的透光率介于30％到70％。
在本申请的一实施例中，所述制造方法，所述低反光材质为铬及其化合物所组成的群组。
在本申请的一实施例中，所述制造方法，通过所述半透光区的设计，使得所述多个光阻层之一所形成的通孔大于20μm。
在本申请的一实施例中，所述制造方法，所述光阻层的材料包括白色光阻。
在本申请的一实施例中，所述制造方法，所述白色光阻的材料相同于所述光间隔物的材料。
在本申请的一实施例中，所述制造方法，所述半透光区的尺寸为40μm。
本申请的又一目的为一种光罩，包括：一透光区；一遮光区；以及一半透光区，设置于所述透光区和所述遮光区之间，所述半透光区的尺寸为40μm；其中，所述光罩的透光率依据一低反光材质的掺入及分布密度而调节；所述低反光材质为铬金属及其化合物所组成的群组，通过调节所述铬 及其化合物的掺入量及分布密度，调节所述光罩的所述半透光区的透光率，其中所述半透光区的透光率介于30％到70％之间。
在本申请的一实施例中，所述光罩用以制造主动开关阵列基板。
有益效果
本申请可实现白色光阻与光间隔物使用同一材料，并提高像素开口率。
附图说明
图1为范例性的主动开关阵列基板的横截面示意图。
图2为范例性的光罩于主动开关阵列基板的横截面示意图。
图3为本申请一实施例的光罩于主动开关阵列基板的横截面示意图。
图4为本申请一实施例的主动开关阵列基板的横截面示意图。
图5为本申请一实施例的用于主动开关阵列基板的光罩横截面示意图。
本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。
附图和说明被认为在本质上是示出性的，而不是限制性的。在图中，结构相似的单元是以相同标号表示。另外，为了理解和便于描述，附图中示出的每个组件的尺寸和厚度是任意示出的，但是本申请不限于此。
在附图中，为了清晰起见，夸大了层、膜、面板、区域等的厚度。在附图中，为了理解和便于描述，夸大了一些层和区域的厚度。将理解的是，当例如层、膜、区域或基底的组件被称作“在”另一组件“上”时，所述组件可以直接在所述另一组件上，或者也可以存在中间组件。
另外，在说明书中，除非明确地描述为相反的，否则词语“包括”将被理解为意指包括所述组件，但是不排除任何其它组件。此外，在说明书中，“在......上”意指位于目标组件上方或者下方，而不意指必须位于基于重力方向的顶部上。
为更进一步阐述本申请为达成预定发明目的所采取的技术手段及功效，以下结合附图及较佳实施例，对依据本申请提出的一种光罩及其主动开关阵列基板的制造方法，其具体实施方式、结构、特征及其功效，详细说明如后。
在一实施例中，本申请的主动开关(例如TFT)阵列及彩色滤光层(CF)可形成于同一基板上。
图1为范例性的主动开关阵列基板的横截面示意图及图2为范例性的光罩于主动开关阵列基板 的横截面示意图。请参照图1及图2，一种主动开关阵列基板10，包括：一第一基板100；一第一绝缘层105，设置在所述第一基板100上；多个主动开关阵列单元130，设置在所述第一绝缘层105上；一彩色滤光层106，设置在所述第一绝缘层105上，并包括多个平行配置的第一光阻层110、第二光阻层111及第三光阻层112；多个光间隔物114，设置在所述彩色滤光层106上，所述第三光阻层112的材料相同于所述光间隔物114的材料；其中所述多个第三光阻层112具有至少一个通孔140且所述通孔140尺寸为d1；以及一像素电极层120，设置在所述彩色滤光层106上。
在一实施例中，一光罩200，包括：一遮光区230、一透光区220及一半透光区210。
在一实施例中，所述第三光阻层112可为白色光阻层，所述白色光阻层的材料相同于所述光间隔物114的材料，由于所述光间隔物114的感光度较低，在曝光显影的相关制程后，使得形成的所述通孔140的尺寸d1较小，不利于后续制程的进行。
图3为本申请一实施例的光罩于主动开关阵列基板的横截面示意图及图4为本申请一实施例的主动开关阵列基板的横截面示意图。请参考图3和图4，一种主动开关阵列基板11的制造方法，包括：提供一第一基板100；设置一第一绝缘层105于所述第一基板100上；设置多个主动开关单元130于所述第一绝缘层105上；依序设置多个平行配置的第一光阻层110、第二光阻层111、第三光阻层112于所述第一绝缘层105上，以完成一彩色滤光层106；同时设置多个光间隔物114及多个通孔150于所述彩色滤光层106上，其包括：设置一遮光材料层于所述彩色滤光层106上，以覆盖所述彩色滤光层106；设置一光罩201于所述遮光材料层上；进行一曝光制造以及一显影制造，以图案化所述遮光材料层，而形成所述多个光间隔物114及所述多个通孔150；设置一透明电极层120于所述彩色滤光层106上；其中，通过调节低反光材质的掺入量及分布密度，调节所述光罩201的透光率。
在一实施例中，所述光罩201具有一透光率98％的透光区220、一透光率为0％的遮光区230、一透光率介于1％～98％之间的半透光区210以及另一透光率介于30％～70％之间的半透光区212。
在一实施例中，所述低反光材料可例如为铬金属(Cr)及其化合物所组成的群组，通过调节所述铬及其化合物的掺入量及分布密度，进而调节所述光罩201的半透光区212、210的透光率，从而控制曝光后所形成的所述第一光阻层110、所述第二光阻层111、所述第三光阻层112、所述光间隔物114及所述通孔150的尺寸。
在一实施例中，所述第三光阻层112可为白色光阻层，所述白色光阻层的材料相同于所述光间隔物114的材料；即使所述光间隔物114的感光度较低，当所述半透光区212的尺寸d3约为40μm，通过所述半透光区212以及所述遮光区230的设计，可使得形成于所述白色光阻层上的所述通孔150的尺寸d2大于20μm，方便后续制程的进行，且提高成品良率。
图5为本申请一实施例的用于主动开关阵列基板的光罩横截面示意图。请参考图3、图4和图5，一种光罩201，用于制造主动开关阵列基板11，包括：一透光率为98％的透光区220、一透光率为0％的遮光区230、一半透光区210以及另一半透光区212，所述半透光区212、210设置于所述透光区220和所述遮光区230之间；其中，所述光罩的透光率依据一低反光材质的掺入量及分布密度而调节，使所述半透光区212、210的透光率低于所述透光区220的透光率，且高于所述遮光区230的透光率。
在一实施例中，所述低反光材质可例如为铬金属(Cr)及其化合物所组成的群组，通过调节所述铬及其化合物的掺入量及分布密度，进而调节所述光罩201的半透光区212、210的透光率。
在一实施例中，所述半透光区212形成有一部分可穿透曝光光(可例如：紫外光，黄光))的半透光膜，所述半透光区212的透光率介于30％到70％之间。
在一实施例中，所述光罩201为一整面状光罩，所述光罩201不存在镂空设计。所述半透光区210形成有一部分可穿透曝光光(可例如：紫外光，黄光)的半透光膜，所述半透光区210的透光率介于1％到98％之间；所述遮光区230形成有遮光、挡光或吸光性质的遮光膜；所述透光区220形成有可穿透曝光光(可例如：紫外光，黄光)的透光膜。
在一实施例中，所述光罩201为一非整面状光罩，所述光罩201存在镂空设计。所述半透光区210形成有一部分可穿透曝光光(可例如：紫外光，黄光)的半透光膜，所述半透光区210的透光率介于1％到98％之间；所述遮光区230形成有遮光、挡光或吸光性质的遮光膜；所述透光区220做镂空设计，曝光光(可例如：紫外光，黄光)直接穿透，并照射到曝光区。
在一实施例中，所述低反光材质(可例如：铬金属及其化合物)可通过物理气相沉积(PVD)的方式，设置于所述光罩201上；所述物理气相沉积方式可为磁控溅射、离子镀等。
在一实施例中，所述曝光光的举例，如：紫外光，黄光；其为对本申请的补充，而并非对本申请加以限制，所述曝光光亦可指其他光源。
在一实施例中，所述光罩，用以制造主动开关阵列基板，亦可用于制造其他类型的基板或面板，如：彩色滤光层基板，垂直配向型显示面板或边缘场开关型显示面板等，其依据设计人员的需求而定，本文不加以限制。
多灰阶光罩，可例如为灰色光罩(Gray-tone mask)和半色调光罩(Half tone mask)，然不限于此。灰色光罩是制作出曝光机分辨率以下的微缝，再通过此微缝部位遮住一部份的光源，以达成半曝光的效果。另一方面，半色调光罩是利用「半透过」的膜，来进行半曝光。因为以上两种方式皆是在1次的曝光过程后即可呈现出「曝光部分」「半曝光部分」及「未曝光部分」3种的曝光层次，故在显影后能够形成2种厚度的光阻(通过利用这样的光阻厚度差异、便可以较一般少的片数下将图形 转写至面板基板上，并达成面板生产効率的提升)。若为半色调光罩则光罩成本会略高于一般光罩。
本申请的有益效果在于，可以实现白色光阻与光间隔物使用同一材料，并提高像素开口率。
“在一些实施例中”及“在各种实施例中”等用语被重复地使用。所述用语通常不是指相同的实施例；但它也可以是指相同的实施例。“包含”、“具有”及“包括”等用词是同义词，除非其前后文意显示出其它意思。
以上所述，仅是本申请的较佳实施例而已，并非对本申请作任何形式上的限制，虽然本申请已以较佳实施例揭露如上，然而并非用以限定本申请，任何熟悉本专业的技术人员，在不脱离本申请技术方案范围内，当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例，但凡是未脱离本申请技术方案的内容，依据本申请的技术实质对以上实施例所作的任何简单修改、等同变化与修饰，均仍属于本申请技术方案的范围内。

Claims (15)

  1. 一种光罩，包括：
    一透光区；
    一遮光区；以及
    一半透光区，设置于所述透光区和所述遮光区之间；
    其中，所述光罩的透光率依据一低反光材质的掺入及分布密度而调节，使所述半透光区的透光率低于所述透光区的透光率，且高于所述遮光区的透光率。
  2. 如权利要求1所述的光罩，其中所述半透光区的透光率介于30％到70％。
  3. 如权利要求1所述的光罩，其中所述低反光材质为铬及其化合物所组成的群组。
  4. 如权利要求1所述的光罩，其中所述低反光材质通过物理气相沉积的方式，设置于所述光罩上。
  5. 如权利要求1所述的光罩，其中所述半透光区的尺寸为40μm。
  6. 如权利要求1所述的光罩，其中所述光罩为一整面状光罩，所述光罩不存在镂空设计。
  7. 如权利要求1所述的光罩，其中所述光罩为一非整面状光罩，所述光罩存在镂空设计。
  8. 一种主动开关阵列基板的制造方法，包括：
    提供一第一基板；
    设置一第一绝缘层于所述第一基板上；
    设置多个主动开关单元于所述第一绝缘层上；
    依序设置多个平行配置的光阻层于所述第一绝缘层上，以完成一彩色滤光层；
    同时设置多个光间隔物及多个通孔于所述彩色滤光层上，其包括：
    设置一遮光材料层于所述彩色滤光层上，以覆盖所述彩色滤光层；
    设置一光罩于所述遮光材料层上，所述光罩具有一透光区、一遮光区以及一半透光区；
    进行一曝光制造以及一显影制造，以图案化所述遮光材料层，而形成所述多个光间隔物及所述多个通孔；
    设置一透明电极层于所述彩色滤光层上；
    其中，通过调节低反光材质的掺入及分布密度，调节所述光罩的透光率。
  9. 如权利要求8所述的主动开关阵列基板的制造方法，其中所述半透光区的透光率介于30％到70％。
  10. 如权利要求8所述的主动开关阵列基板的制造方法，其中所述低反光材质为铬及其化合物所组成的群组。
  11. 如权利要求8所述的主动开关阵列基板的制造方法，通过所述半透光区的设计，使得所述多个 光阻层之一所形成的通孔大于20μm。
  12. 如权利要求8所述的主动开关阵列基板的制造方法，其中所述光阻层的材料包括白色光阻。
  13. 如权利要求12所述的主动开关阵列基板的制造方法，其中所述白色光阻的材料相同于所述光间隔物的材料。
  14. 如权利要求8所述的主动开关阵列基板的制造方法，其中所述半透光区的尺寸为40μm。
  15. 一种光罩，包括：
    一透光区；
    一遮光区；以及
    一半透光区，设置于所述透光区和所述遮光区之间，其尺寸为40μm；
    其中，所述光罩的透光率依据一低反光材质的掺入及分布密度而调节；
    其中，所述低反光材质为铬金属及其化合物所组成的群组，通过调节所述铬及其化合物的掺入量及分布密度，调节所述光罩的所述半透光区的透光率，其中所述半透光区的透光率介于30％到70％之间；
    其中，所述光罩用以制造主动开关阵列基板。
PCT/CN2017/084669 2017-03-30 2017-05-17 光罩及其主动开关阵列基板的制造方法 WO2018176603A1 (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11412623B2 (en) 2017-10-31 2022-08-09 Kunshan Go-Visionox Opto-Electronics Co., Ltd. Display screens, display devices integrated with the same, and cover plates

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107748459B (zh) * 2017-09-25 2020-05-22 惠科股份有限公司 一种显示面板的制造方法和制造装置
CN107544181B (zh) * 2017-09-25 2020-06-16 惠科股份有限公司 显示面板的制造方法及其制造装置
CN109444086A (zh) * 2018-09-20 2019-03-08 歌尔股份有限公司 用于校准透光率检测设备的标准组件和方法
WO2022000478A1 (zh) * 2020-07-03 2022-01-06 欧菲光集团股份有限公司 线路板制作方法及线路板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101344720A (zh) * 2007-07-12 2009-01-14 Hoya株式会社 灰阶掩模及其缺陷修正方法、其制造方法、图案转印方法
CN104409416A (zh) * 2014-12-11 2015-03-11 深圳市华星光电技术有限公司 用于制作阵列基板的方法及阵列基板
CN106526953A (zh) * 2016-12-29 2017-03-22 惠科股份有限公司 彩色滤光层基板的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4117169B2 (ja) * 2002-09-09 2008-07-16 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置及びその製造方法
KR100630692B1 (ko) * 2004-07-22 2006-10-02 삼성전자주식회사 포토마스크 및 포토마스크의 투과율 보정 방법
TW200717176A (en) * 2005-09-21 2007-05-01 Dainippon Printing Co Ltd Photo mask having gradation sequence and method for manufacturing the same
KR101190045B1 (ko) * 2005-12-21 2012-10-12 엘지디스플레이 주식회사 포토 마스크 및 이를 이용한 액정표시장치용 어레이 기판의제조 방법
KR101082715B1 (ko) * 2005-12-26 2011-11-15 호야 가부시키가이샤 마스크 블랭크 및 포토마스크
JP2016057577A (ja) * 2014-09-12 2016-04-21 信越化学工業株式会社 フォトマスクブランク
CN104965333B (zh) * 2015-07-15 2018-05-01 深圳市华星光电技术有限公司 Coa型液晶显示面板及其制作方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101344720A (zh) * 2007-07-12 2009-01-14 Hoya株式会社 灰阶掩模及其缺陷修正方法、其制造方法、图案转印方法
CN104409416A (zh) * 2014-12-11 2015-03-11 深圳市华星光电技术有限公司 用于制作阵列基板的方法及阵列基板
CN106526953A (zh) * 2016-12-29 2017-03-22 惠科股份有限公司 彩色滤光层基板的制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11412623B2 (en) 2017-10-31 2022-08-09 Kunshan Go-Visionox Opto-Electronics Co., Ltd. Display screens, display devices integrated with the same, and cover plates

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