WO2018159753A1 - Cible de pulvérisation et son procédé de fabrication - Google Patents

Cible de pulvérisation et son procédé de fabrication Download PDF

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Publication number
WO2018159753A1
WO2018159753A1 PCT/JP2018/007754 JP2018007754W WO2018159753A1 WO 2018159753 A1 WO2018159753 A1 WO 2018159753A1 JP 2018007754 W JP2018007754 W JP 2018007754W WO 2018159753 A1 WO2018159753 A1 WO 2018159753A1
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WIPO (PCT)
Prior art keywords
sputtering
cuo
target
copper oxide
copper
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PCT/JP2018/007754
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English (en)
Japanese (ja)
Inventor
齋藤　淳
謙介 井尾
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三菱マテリアル株式会社
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Filing date
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Priority claimed from JP2018024510A external-priority patent/JP6447761B2/ja
Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to KR1020197019671A priority Critical patent/KR102302021B1/ko
Publication of WO2018159753A1 publication Critical patent/WO2018159753A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/12—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • the present invention relates to a sputtering target used for forming a copper oxide film and a method for manufacturing the sputtering target.
  • a conductive film used for a touch sensor or the like one having a transparent conductor layer formed on both surfaces of the film and a metal layer formed on the surface of each transparent conductor layer is known.
  • a transparent conductor layer formed on both surfaces of the film and a metal layer formed on the surface of each transparent conductor layer.
  • adjacent conductive films are in close contact with each other, and when the close conductive film is peeled off, the transparent conductor layer is scratched. There was a problem.
  • Patent Document 1 proposes a film in which an inorganic nanocoating layer is formed on a film substrate.
  • the adhesion between adjacent films can be suppressed by the inorganic nanocoating layer.
  • a copper oxide film can be applied as the inorganic nanocoating layer.
  • Examples of a method for forming a copper oxide film on the surface of a substrate such as a film include sputtering using a copper oxide target, and sputtering in the presence of oxygen gas using an oxygen-free copper target (reactivity A method of performing sputtering) is disclosed.
  • Patent Document 2 proposes an oxygen-containing copper target for forming an oxygen-containing copper film.
  • Patent Document 3 discloses a sputtering target made of Ni, Cu, and CuO.
  • the formed oxygen-containing copper film has the same characteristics as the metal copper film, and as a copper oxide film The characteristics of were insufficient.
  • sintering is carried out by an electric current sintering method.
  • the content of CuO increases, the reaction between Cu and CuO does not proceed sufficiently, and the strength of the sintered body is insufficient. As a result, cracks may occur during production.
  • Ni when Ni is contained, the etching property of the film is deteriorated, and it may be difficult to form a wiring pattern or the like with high accuracy.
  • Ni may be mixed into the etching solution in addition to Cu, and it may be difficult to reuse the etching solution.
  • the present invention has been made in view of the above-mentioned circumstances, and can stably perform DC sputtering, and can suppress the generation of cracks during the production of the target and can be produced with a high yield. It aims at providing the manufacturing method of this sputtering target.
  • the sputtering target of the present invention has a metallic copper phase and a copper oxide phase, and the volume fraction of the copper oxide phase is in the range of more than 80 vol% and 90 vol% or less.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is in the range of 0.03 to 0.4. It is said.
  • the sputtering target of the present invention since the volume fraction of the copper oxide phase exceeds 80 vol%, the copper oxide phase is sufficiently present, and the copper oxide film can be obtained without performing sputtering in the presence of oxygen gas. Can be formed. Moreover, since the volume ratio of the copper oxide phase is in the range of 90 vol% or less, the specific resistance is lowered, and a copper oxide film can be formed by DC sputtering. As a result of X-ray photoelectron spectroscopy, the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is 0.03 or more, and CuO is present in the copper oxide phase.
  • the strength of the sintered body is improved and the occurrence of cracks during production can be suppressed.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is set to 0.4 or less, the abundance ratio of CuO in the copper oxide phase does not increase so much. The variation in resistance value can be suppressed. Therefore, DC sputtering can be performed stably.
  • the ratio IR1 / IR2 between the diffraction intensity IR1 of CuO and the diffraction intensity IR2 of Cu 2 O is preferably 0.15 or less.
  • the existing ratio of CuO is small in the copper oxide phase, and the existing ratio of Cu 2 O is high.
  • CuO reacts with metallic copper to produce Cu 2 O, when the abundance ratio of CuO is high, metallic copper and CuO are not sufficiently reacted. For this reason, Cu 2 O is uniformly dispersed by setting the abundance ratio of CuO in the copper oxide phase to 0.15 or less, and variation in resistance value in the target can be suppressed.
  • the manufacturing method of the sputtering target of this invention is a manufacturing method of the sputtering target which has a metallic copper phase and a copper oxide phase, and the volume fraction of the said copper oxide phase was made into the range of 90 vol% or less exceeding 80 vol%.
  • the average particle size is 3 ⁇ m or more, and the sintering temperature is 720 ° C. or more.
  • the sintering temperature in the sintering process is set to 720 ° C. or higher.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O can be adjusted to be in the range of 0.03 or more and 0.4 or less. Therefore, the strength of the sintered body can be ensured and the occurrence of cracks during production can be suppressed. Moreover, variation in specific resistance can be suppressed and DC sputtering can be performed stably.
  • a sputtering target capable of stably performing DC sputtering, capable of suppressing cracking during manufacturing of the target, and manufacturing with high yield, and a method of manufacturing the sputtering target. it can.
  • FIG. 1 It is a flowchart which shows the manufacturing method of the sputtering target which is this embodiment. It is a figure which shows an example of the XPS result in the example 13 of this invention. It is a figure which shows an example of the XRD result in this invention example 2 and the comparative example 1.
  • FIG. 1 shows the manufacturing method of the sputtering target which is this embodiment. It is a figure which shows an example of the XPS result in the example 13 of this invention. It is a figure which shows an example of the XRD result in this invention example 2 and the comparative example 1.
  • the sputtering target which is one Embodiment of this invention and the manufacturing method of a sputtering target are demonstrated.
  • the sputtering target which is this embodiment is used when forming a copper oxide film.
  • the sputtering target which is this embodiment has a metallic copper phase and a copper oxide phase, and the volume ratio of the copper oxide phase is in the range of more than 80 vol% and 90 vol% or less.
  • the Cu content is in the range of 70 atomic% to 74 atomic%.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is 0.03 or more. It is within the range of 0.4 or less. That is, in the present embodiment, the copper oxide phase is mainly Cu 2 O, and CuO is present in part.
  • the ratio IR1 / IR2 between the diffraction intensity IR1 of CuO and the diffraction intensity IR2 of Cu 2 O is 0.15 or less. Yes. That is, in this embodiment, the existing ratio of CuO in the copper oxide phase is not increased more than necessary, and Cu 2 O is sufficiently present.
  • the sputtering target which is this embodiment it has the property of a p-type semiconductor as the whole target.
  • the resistance value of the sputtering target which is this embodiment is 10 ⁇ ⁇ cm or less.
  • the variation with respect to the average value of the resistance value on the target sputtering surface is set to 50% or less.
  • the metallic copper phase is disperse
  • the volume ratio of the copper oxide phase in the sputtering target of the present embodiment the diffraction intensity of X-ray diffraction analysis (XRD), the peak intensity of X-ray photoelectron spectroscopy (XPS), the variation in resistance value, the metal copper phase
  • XRD X-ray diffraction analysis
  • XPS X-ray photoelectron spectroscopy
  • the copper oxide film is formed by DC sputtering, and the abundance ratio of the metal copper phase and the copper oxide phase is particularly important.
  • the volume fraction of the copper oxide phase is 80 vol% or less, a relatively large amount of metallic copper is present in the formed copper oxide film, and a copper oxide film having characteristics as copper oxide can be formed. There is a risk of disappearing.
  • the volume ratio of the copper oxide phase exceeds 90 vol%, the resistance value of the entire target increases, and there is a possibility that DC sputtering cannot be performed.
  • the metal copper phase is dispersed in islands, and the copper oxide phase existing between them acts as a p-type semiconductor that reacts with the metal copper phase and degenerates. If it is not dispersed, the resistance value of the entire target will increase.
  • the volume ratio of the copper oxide phase is set in the range of more than 80 vol% and 90 vol% or less. In order to reliably form a copper oxide film having excellent characteristics, the volume ratio of the copper oxide phase is preferably 85 vol% or more. On the other hand, in order to further suppress the resistance value of the sputtering target, the volume ratio of the copper oxide phase is preferably 85 vol% or less. That is, it is preferable to appropriately adjust the volume ratio of the copper oxide phase in consideration of required characteristics or resistance values within the range of 80 vol% and 90 vol% or less of the volume ratio of the copper oxide phase.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O in the X-ray photoelectron spectroscopy (XPS) is 0.03 or more and 0.4 or less. It is set within the range.
  • the above lower limit of IP1 / IP2 is preferably 0.05 or more, more preferably 0.1 or more. .
  • the upper limit of IP1 / IP2 is preferably set to 0.3 or less, and more preferably set to 0.2 or less.
  • the peak intensities IP2 of Cu and Cu 2 O are used. The CuO abundance ratio is specified.
  • the ratio IR1 / IR2 between the diffraction intensity IR1 of CuO and the diffraction intensity IR2 of Cu 2 O is set to 0.15 or less.
  • the ratio IR1 / IR2 between the diffraction intensity IR1 of CuO and the diffraction intensity IR2 of Cu 2 O should be 0.1 or less. Is preferable, and it is more preferable to set it as 0.05 or less.
  • the resistance value is preferably 10 ⁇ ⁇ cm or less, and more preferably 1 ⁇ ⁇ cm or less.
  • the resistance value of the sputtering target in this embodiment be the average value of the measured value in the several measurement point mentioned later.
  • the variation with respect to the average resistance value on the target sputtering surface is set to 50% or less.
  • the variation of the resistance value on the target sputtering surface is preferable to set to 40% or less, preferably 30% or less. More preferably.
  • the shape of the sputtering target when the shape of the sputtering target is a flat plate and the target sputtering surface is circular, as shown in FIG. 1, it passes through the center (1) of the circle and the center of the circle.
  • the resistance value is measured at five points (2), (3), (4), and (5) on the outer peripheral portions (2), (3), (4), and (5) on the two straight lines that are orthogonal to each other. The variation with respect to is calculated
  • outer peripheral part (2), (3), (4), (5) was made into the range within 10% of a diameter toward an inner side from an outer periphery.
  • the metallic copper phase is relatively uniformly dispersed.
  • the metal copper phase is dispersed in the form of islands, and the copper oxide phase existing between these acts as a p-type semiconductor. By being uniformly dispersed, conductivity can be ensured over the entire target, and DC sputtering can be performed stably.
  • the average particle diameter of the metallic copper phase is set within the range of 10 ⁇ m or more and 200 ⁇ m or less.
  • the upper limit of the average particle diameter of the metallic copper phase is preferably 150 ⁇ m or less, and more preferably 100 ⁇ m or less.
  • the lower limit of the average particle diameter of the metal copper phase is preferably 20 ⁇ m or more, and more preferably 30 ⁇ m or more.
  • raw material powder containing metal copper powder and copper oxide powder is prepared (raw material powder preparation step S01).
  • a metal copper powder having a mass ratio of 99.99% or more (4N) or more it is preferable to use a metal copper powder having a mass ratio of 99.99% or more (4N) or more.
  • the particle size of this metallic copper powder it becomes possible by controlling the particle size of this metallic copper powder to control the average particle size of the metallic copper phase in the sputtering target.
  • the average particle diameter of the metal copper powder is in the range of 10 ⁇ m to 200 ⁇ m.
  • the copper oxide powder CuO powder and mixed powder of CuO powder and Cu 2 O powder are used.
  • the CuO powder and the Cu 2 O powder it is preferable to use those in which the purity of Cu in the metal component is 99% or more (2N) or more by mass ratio.
  • the average particle diameter of the Cu 2 O powder is preferably in the range of 1 ⁇ m or more 30 ⁇ m or less. And the average particle diameter of CuO powder shall be 3 micrometers or more.
  • flour it will be 100 micrometers or less substantially.
  • the compounding quantity of each powder when using CuO powder for copper oxide powder, the compounding quantity of CuO powder is preferably in the range of 36 mol% or more and 44 mol% or less, and CuO powder and Cu 2 O powder are used for copper oxide powder. In this case, the total amount of CuO powder and Cu 2 O powder is preferably less than 50 mol%.
  • the weighed metal copper powder and copper oxide powder are mixed by a mixing device such as a ball mill, a Henschel mixer, a rocking mixer or the like to obtain a raw material powder.
  • the atmosphere in the mixing apparatus is preferably an inert gas atmosphere such as Ar.
  • the raw material powder is used to sinter by hot pressing or the like to obtain a sintered body (sintering step S02).
  • the sintering temperature at this time is preferably 720 ° C. or more and 900 ° C. or less
  • the holding time is within the range of 30 min or more and 600 min or less
  • the pressing pressure is preferably within the range of 10 MPa or more and 50 MPa or less.
  • the sintering temperature is set to 720 ° C. or higher, CuO and Cu react to form Cu 2 O.
  • the particle diameter of the CuO powder is 3 ⁇ m or more, a part of CuO remains even when Cu 2 O is formed by reaction of CuO and Cu.
  • the obtained sintered body is machined (machining step S03). Thereby, the sputtering target which is this embodiment is manufactured.
  • the volume fraction of the copper oxide phase exceeds 80 vol%, the copper oxide phase is sufficiently present and sputtered in the presence of oxygen gas. Even if it does not perform, a copper oxide film can be formed. Moreover, since the volume ratio of the copper oxide phase is 90 vol% or less, the conductivity of the entire target is ensured, and a copper oxide film can be formed by DC sputtering.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is 0.03 or more.
  • IP1 / IP2 is set to 0.4 or less, the CuO abundance ratio is reduced in the copper oxide phase, resistance value variation in the target can be suppressed, and stable DC sputtering can be performed. it can.
  • the ratio IR1 / IR2 between the diffraction intensity IR1 of CuO and the diffraction intensity IR2 of Cu 2 O is 0.15 or less.
  • Cu 2 O is uniformly dispersed as a copper phase, and variation in resistance value in the target can be suppressed. Therefore, a copper oxide film can be stably formed by DC sputtering.
  • the metal copper phase is dispersed in an island shape, and the copper oxide phase existing between these metal copper phases reacts with the metal copper phase to act as a degenerate p-type semiconductor,
  • the target as a whole has the properties of a p-type semiconductor, and it is considered that conductivity is ensured. Therefore, a copper oxide film can be formed by DC sputtering.
  • the resistance value of the sputtering target is 10 ⁇ ⁇ cm or less, DC sputtering can be reliably performed. Furthermore, in this embodiment, since the variation with respect to the average value of the specific resistance value on the target sputtering surface is 50% or less, sufficient conductivity is ensured as a whole target, which is stabilized by DC sputtering. Thus, a copper oxide film can be formed.
  • the density is 5.5 g / cm 3 or more, the occurrence of abnormal discharge during sputtering can be suppressed.
  • the density is 7.5 g / cm 3 or less, workability is ensured, and this sputtering target can be molded well.
  • the metallic copper phase is finely dispersed in the target, and the entire target is conductive. Can be secured. Thereby, DC sputtering can be performed stably.
  • the average particle diameter of the metallic copper phase is 10 ⁇ m or more, it is not necessary to excessively reduce the particle diameter of the metallic copper powder at the time of target production, and the oxidation of the metallic copper powder can be suppressed. Good ligation can be performed.
  • the average particle diameter of the CuO powder contained in the raw material powder is 3 ⁇ m or more, Cu and CuO react with each other in the sintering step S02.
  • CuO can remain, and the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O can be adjusted to the above range. That is, since the particle diameter of the CuO powder is relatively large, the reaction between Cu and CuO does not proceed in a short time, and CuO can remain.
  • setting the sintering temperature in the sintering step S02 above 720 ° C. allowed to reliably reacting Cu and CuO can generate Cu 2 O.
  • volume ratio of the copper oxide phase in the target The concentration (atomic%) of copper in the target is measured by a titration method, and the remainder is calculated as oxygen. The volume fraction with copper was calculated on the assumption that the calculated oxygen was present as the total amount of Cu 2 O. In addition, since it does not consider about a void
  • the size of the metal copper phase particles in the structure of the sputtering target was confirmed from the IQ map obtained by EBSD.
  • the IQ map observed the cross-sectional range of 500 micrometers x 750 micrometers, and measured the particle size quantitatively.
  • EBSD collected the pattern using OIM Data Collection of TSL Solutions, Inc., and calculated the particle size using OIM Analysis 5.31 manufactured by the company.
  • the density was calculated from the weight and dimensions of the sputtering target.
  • X-ray photoelectron spectroscopy X-ray photoelectron spectroscopy
  • XPS X-ray photoelectron spectroscopy
  • ULVAC-PHI PHI5000 VersaProbeII X-ray source Monochromated AlK ⁇ 50W Path energy: 187.85 eV (Survey), 46.95, 58.7 eV (Profile) Measurement interval: 0.8 eV / step (Survey), 0.1, 0.125 eV / step (Profile) Photoelectron extraction angle with respect to sample surface: 45 deg Analysis area: About 200 ⁇ m ⁇
  • X-ray diffraction analysis X-ray diffraction analysis
  • XRD X-ray diffraction analysis
  • pn determination About the sputtering target, pn determination was performed with the pn determination device. If it is a flat plate shape, about one measurement point (1) in the target sputtering surface as shown in FIGS. 1 and 2, if it is a cylindrical shape, 1 in the target sputtering surface as shown in FIG. The pn determination was made for the measurement point at the location (1). The determination results are shown in Table 2. In this measurement, a pn determination device (MODEL PN-01) manufactured by NP Corporation was used as the pn determination device, and the pn determination was performed using a thermoelectromotive force probe. The measurement temperature was 23 ⁇ 5 ° C., and the humidity was 50 ⁇ 20%.
  • the obtained sputtering target was bonded to a backing plate if it was a flat plate type, or bonded to a backing tube if it was a cylindrical type, and the number of abnormal discharge occurrences during sputtering was measured by the following procedure.
  • a film formation test was performed under the following film formation conditions.
  • Target size 126mm x 178mm x 6mm
  • Total pressure: 0.4Pa Sputtering gas: Ar 50 sccm
  • a film formation test was performed on the cylindrical sputtering target under the following film formation conditions.
  • Target size ( ⁇ 155mm- ⁇ 135mm) ⁇ 150mmL (4 divisions)
  • Power supply DC2000W
  • Total pressure: 0.4Pa Sputtering gas: Ar 160 sccm
  • a sheet resistance ( ⁇ / ⁇ (square)) was measured by a four-probe method using a low resistivity meter (Loresta-GP) manufactured by Mitsubishi Chemical Corporation as a resistance measuring device.
  • the measurement temperature was 23 ⁇ 5 ° C., and the humidity was 50 ⁇ 20%.
  • the sample used for the measurement was produced under the above sputtering conditions.
  • the film was formed on a glass substrate with a target film thickness of 200 nm.
  • Comparative Example 1 and Comparative Example 3 in which the volume fraction of the copper oxide phase exceeded 90 vol%, the resistance value was high and DC sputtering could not be performed.
  • Comparative Example 2 and Comparative Example 4 in which the volume ratio of the copper oxide phase was 80 vol% or less, the resistance value of the formed copper oxide film was low, and the characteristics as the copper oxide film were insufficient.
  • Comparative Example 5 in which the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O exceeded 0.4, the variation in resistance value was large. Further, the number of occurrences of abnormal discharge was large, and stable DC sputtering could not be performed.
  • the sintering temperature in the sintering process is as low as 580 ° C., so it is assumed that the reaction between Cu and CuO was insufficient.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is in the range of 0.03 to 0.4. According to Invention Example 1-14, it was confirmed that cracking during production was suppressed. Further, it was confirmed that a copper oxide film having a low resistance value, DC sputtering, and excellent characteristics can be formed.

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Abstract

La cible de pulvérisation d'après la présente invention est caractérisée en ce qu'elle contient une phase de cuivre métallique et une phase d'oxyde de cuivre. La fraction volumique de la phase d'oxyde de cuivre se situe dans une plage supérieure à 80 % en volume et inférieure ou égale à 90 % en volume. Comme le montre le résultat d'une analyse par spectroscopie photoélectronique à rayons X, le rapport IP1/IP2 entre un pic d'intensité IP1 de CuO et un pic d'intensité IP2 de Cu et de Cu2O se situe dans une plage de 0,03 à 0,4.
PCT/JP2018/007754 2017-03-01 2018-03-01 Cible de pulvérisation et son procédé de fabrication WO2018159753A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020197019671A KR102302021B1 (ko) 2017-03-01 2018-03-01 스퍼터링 타깃 및 스퍼터링 타깃의 제조 방법

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017-038578 2017-03-01
JP2017038578 2017-03-01
JP2018024510A JP6447761B2 (ja) 2017-03-01 2018-02-14 スパッタリングターゲット及びスパッタリングターゲットの製造方法
JP2018-024510 2018-02-14

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008280545A (ja) * 2007-05-08 2008-11-20 Mitsubishi Materials Corp 酸素含有銅ターゲット
JP2011084754A (ja) * 2009-10-13 2011-04-28 Hitachi Metals Ltd スパッタリングターゲットの製造方法
WO2015170534A1 (fr) * 2014-05-08 2015-11-12 三井金属鉱業株式会社 Matériau de cible de pulvérisation cathodique
JP2017172039A (ja) * 2016-03-22 2017-09-28 三菱マテリアル株式会社 スパッタリングターゲット

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008280545A (ja) * 2007-05-08 2008-11-20 Mitsubishi Materials Corp 酸素含有銅ターゲット
JP2011084754A (ja) * 2009-10-13 2011-04-28 Hitachi Metals Ltd スパッタリングターゲットの製造方法
WO2015170534A1 (fr) * 2014-05-08 2015-11-12 三井金属鉱業株式会社 Matériau de cible de pulvérisation cathodique
JP2017172039A (ja) * 2016-03-22 2017-09-28 三菱マテリアル株式会社 スパッタリングターゲット

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