WO2017164168A1 - Cible de pulvérisation cathodique - Google Patents

Cible de pulvérisation cathodique Download PDF

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Publication number
WO2017164168A1
WO2017164168A1 PCT/JP2017/011207 JP2017011207W WO2017164168A1 WO 2017164168 A1 WO2017164168 A1 WO 2017164168A1 JP 2017011207 W JP2017011207 W JP 2017011207W WO 2017164168 A1 WO2017164168 A1 WO 2017164168A1
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Prior art keywords
target
sputtering
less
copper
sputtering target
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PCT/JP2017/011207
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English (en)
Japanese (ja)
Inventor
齋藤　淳
謙介 井尾
一郎 塩野
張　守斌
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三菱マテリアル株式会社
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Priority claimed from JP2017038734A external-priority patent/JP6876268B2/ja
Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to KR1020187021785A priority Critical patent/KR102237332B1/ko
Priority to CN201780010079.8A priority patent/CN108603284A/zh
Publication of WO2017164168A1 publication Critical patent/WO2017164168A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • the present invention relates to a sputtering target used when forming a copper oxide film.
  • This application claims priority based on Japanese Patent Application No. 2016-057461 filed in Japan on March 22, 2016 and Japanese Patent Application No. 2017-038734 filed on March 1, 2017 in Japan. Is hereby incorporated by reference.
  • a conductive film used for a touch sensor or the like one having a transparent conductor layer formed on both surfaces of the film and a metal layer formed on the surface of each transparent conductor layer is known.
  • a transparent conductor layer formed on both surfaces of the film and a metal layer formed on the surface of each transparent conductor layer.
  • adjacent conductive films are in close contact with each other, and when the close conductive film is peeled off, the transparent conductor layer is scratched. There was a problem.
  • Patent Document 1 proposes a film in which an inorganic nanocoating layer is formed on a film substrate.
  • the adhesion between adjacent films can be suppressed by the inorganic nanocoating layer.
  • a copper oxide film can be applied as the inorganic nanocoating layer.
  • Examples of a method for forming a copper oxide film on the surface of a substrate such as a film include sputtering using a copper oxide target, and sputtering in the presence of oxygen gas using an oxygen-free copper target (reactivity A method of performing sputtering) is disclosed.
  • Patent Document 2 proposes an oxygen-containing copper target for forming an oxygen-containing copper film.
  • Patent Document 3 discloses a sputtering target made of a Cu / Cu 2 O composite alloy.
  • Japan Special Table 2014-529516 Gazette A) Japanese Unexamined Patent Publication No. 2008-280545 (A) Japanese Patent Laid-Open No. 2001-210441 (A)
  • Patent Document 3 describes that processing becomes difficult when the compounding ratio of Cu 2 O exceeds 80 vol%. Furthermore, it is described that when the compounding ratio of Cu 2 O increases, the resistance value of the formed wiring film increases. Therefore, in Patent Document 3, limiting the blending ratio of Cu 2 O below 80 vol%. As described in Patent Document 3, when the Cu 2 O compounding ratio is 80 vol% or less and the content of metal Cu is high, the metal Cu phase is present in a network and the conductivity is low. It is secured. In the sputtering target having such a configuration, a copper oxide phase having a lower conductivity than that of metal Cu may cause abnormal discharge, and there is a possibility that sputtering cannot be stably performed.
  • the present invention has been made in view of the above-described circumstances, and an object thereof is to provide a sputtering target capable of DC sputtering and capable of forming a uniform copper oxide film.
  • a sputtering target of one embodiment of the present invention (hereinafter referred to as “sputtering target of the present invention”) has a metal copper phase and a copper oxide phase, and the volume ratio of the copper oxide phase. Is in the range of more than 80 vol% and not more than 90 vol%, the variation with respect to the average value of the resistance value on the target sputtering surface is 50% or less, and the average particle diameter of the metallic copper phase in the target structure is 10 ⁇ m or more It is characterized by being within a range of 200 ⁇ m or less.
  • the sputtering target of the present invention since the volume fraction of the copper oxide phase exceeds 80 vol%, the copper oxide phase is sufficiently present, and the copper oxide film can be formed without performing sputtering in the presence of oxygen gas. Can be formed. Moreover, since the volume ratio of the copper oxide phase is in the range of 90 vol% or less, and the particle size of the metal copper phase in the target structure is in the range of 10 ⁇ m or more and 200 ⁇ m or less, a relatively fine metal copper phase Are uniformly dispersed. The variation of the resistance value on the target sputtering surface with respect to the average value is 50% or less, and the variation in the resistance value of the target sputtering surface is small, so that the conductivity of the entire target is sufficiently ensured. Therefore, a copper oxide film can be stably formed by DC sputtering.
  • the target has the property of a p-type semiconductor as a whole.
  • the metallic copper phase is dispersed in an island shape, and the copper oxide phase existing between these metallic copper phases contributes to the conductivity of the target as a p-type semiconductor, so that the target as a whole has the properties of a p-type semiconductor. Therefore, it is considered that conductivity can be ensured.
  • This makes it possible to form a copper oxide film by DC sputtering without causing the copper oxide phase to cause abnormal discharge.
  • the metal Cu phase is present in a network form and conductivity is ensured, the target as a whole does not have semiconductor properties. In the sputtering target having such a configuration, a copper oxide phase having a lower conductivity than metal Cu may cause abnormal discharge, and thus there is a possibility that stable sputtering cannot be performed.
  • resistance value is 10 ohm * cm or less. In this case, since the resistance value of the target is sufficiently low, DC sputtering can be reliably performed.
  • the ratio I1 / I2 between the diffraction intensity I1 of CuO and the diffraction intensity I2 of Cu 2 O is preferably 0.15 or less.
  • the existing ratio of CuO is small in the copper oxide phase, and the existing ratio of Cu 2 O is high.
  • CuO reacts with metallic copper to produce Cu 2 O, when the abundance ratio of CuO is high, metallic copper and CuO are not sufficiently reacted. For this reason, Cu 2 O is uniformly dispersed by setting the abundance ratio of CuO in the copper oxide phase to 0.15 or less, and variation in resistance value in the target can be suppressed.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is 0.03 or more and 0.4 or less. It is preferable to be within the range. In this case, the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is 0.03 or more, and CuO is present in the copper oxide phase. The strength is improved and the occurrence of cracks during production can be suppressed. On the other hand, since IP1 / IP2 is 0.4 or less, the abundance ratio of CuO in the copper oxide phase is reduced, and variation in resistance value in the target can be suppressed.
  • the density is preferably in the range of 5.5 g / cm 3 or more and 7.5 g / cm 3 or less.
  • the density is set to 5.5 g / cm 3 or more, voids existing on the target sputtering surface can be reduced, and occurrence of abnormal discharge during sputtering can be suppressed.
  • the density is 7.5 g / cm 3 or less, the workability is improved and the sputtering target can be easily formed.
  • a sputtering target capable of DC sputtering and capable of forming a uniform copper oxide film can be provided.
  • the sputtering target which is one Embodiment of this invention is demonstrated.
  • the sputtering target which is this embodiment is used when forming a copper oxide film.
  • the sputtering target which is this embodiment has a metallic copper phase and a copper oxide phase, and the volume ratio of the copper oxide phase exceeds 80 vol% and is within a range of 90 vol% or less.
  • the Cu content is in the range of 70 atomic% to 74 atomic%.
  • the metallic copper phase is dispersed in an island shape in the target, and the average particle size of the metallic copper phase is in the range of 10 ⁇ m to 200 ⁇ m.
  • variation with respect to the average value of the resistance value in a target sputtering surface is 50% or less.
  • the copper oxide phase is mainly composed of Cu 2 O, and CuO may partially exist.
  • the ratio I1 / I2 between the diffraction intensity I1 of CuO and the diffraction intensity I2 of Cu 2 O is 0.15 or less.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is 0.03 or more. It is within the range of 0.4 or less.
  • the sputtering target which is this embodiment has the property of a p-type semiconductor as the whole target.
  • the resistance value of the sputtering target which is this embodiment is 10 ⁇ ⁇ cm or less.
  • the density is in the range of 5.5 g / cm 3 or more and 7.5 g / cm 3 or less.
  • the volume ratio of the copper oxide phase in the sputtering target according to the present embodiment the average particle diameter of the metal copper phase, the variation in resistance value, the diffraction intensity of X-ray diffraction analysis (XRD), and the X-ray photoelectron spectroscopy analysis (XPS)
  • XRD X-ray diffraction analysis
  • XPS X-ray photoelectron spectroscopy analysis
  • the copper oxide film is formed by DC sputtering, and the abundance ratio of the metal copper phase and the copper oxide phase is particularly important.
  • the volume ratio of the copper oxide phase is less than 80 vol%, a relatively large amount of metallic copper is present in the formed copper oxide film, and a copper oxide film having characteristics as copper oxide can be formed. There is a risk of disappearing.
  • the volume ratio of the copper oxide phase exceeds 90 vol%, the resistance value of the entire target increases, and there is a possibility that DC sputtering cannot be performed.
  • the metal copper phase is dispersed in islands, and the copper oxide phase existing between them acts as a p-type semiconductor that reacts with the metal copper phase and degenerates. If it is not dispersed, the resistance value of the entire target will increase.
  • the volume ratio of the copper oxide phase is set in the range of more than 80 vol% and 90 vol% or less. In order to reliably form a copper oxide film having excellent characteristics, the volume ratio of the copper oxide phase is preferably 85 vol% or more. On the other hand, in order to further suppress the resistance value of the sputtering target, the volume ratio of the copper oxide phase is preferably 85 vol% or less. That is, it is preferable to appropriately adjust the volume ratio of the copper oxide phase in consideration of required characteristics or resistance values within the range of 80 vol% and 90 vol% or less of the volume ratio of the copper oxide phase.
  • the metallic copper phase is relatively uniformly dispersed.
  • the metal copper phase is dispersed in the form of islands, and the copper oxide phase existing between these acts as a p-type semiconductor.
  • the average particle diameter of the metallic copper phase is set within the range of 10 ⁇ m or more and 200 ⁇ m or less.
  • the upper limit of the average particle diameter of the metallic copper phase is preferably 150 ⁇ m or less, and more preferably 100 ⁇ m or less.
  • the lower limit of the average particle diameter of the metal copper phase is preferably 20 ⁇ m or more, and more preferably 30 ⁇ m or more.
  • the variation with respect to the average resistance value on the target sputtering surface is set to 50% or less.
  • the variation of the resistance value on the target sputtering surface is preferable to set to 40% or less, preferably 30% or less. More preferably.
  • the shape of the sputtering target is a flat plate and the target sputtering surface is circular, as shown in FIG. 1, it passes through the center (1) of the circle and the center of the circle.
  • the resistance value is measured at five points (2), (3), (4), and (5) on the outer peripheral portions (2), (3), (4), and (5) on the two straight lines that are orthogonal to each other. The variation with respect to is calculated
  • the shape of the sputtering target is a flat plate and the target sputtering surface is rectangular, as shown in FIG.
  • the resistance value is preferably 10 ⁇ ⁇ cm or less, and more preferably 1 ⁇ ⁇ cm or less.
  • the resistance value of the sputtering target in this embodiment be an average value of the measured value of the above-mentioned 5 points
  • the ratio I1 / I2 between the diffraction intensity I1 of CuO and the diffraction intensity I2 of Cu 2 O is set to 0.15 or less.
  • the ratio I1 / I2 of the CuO diffraction intensity I1 and the Cu 2 O diffraction intensity I2 should be 0.1 or less. Is preferable, and it is more preferable to set it as 0.05 or less.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O in the X-ray photoelectron spectroscopy (XPS) is 0.03 or more and 0.4 or less. It is set within the range.
  • the lower limit of the above IP1 / IP2 is preferably 0.05 or more, and more preferably 0.1 or more. Further preferred.
  • the upper limit of the above-mentioned IP1 / IP2 is preferably set to 0.3 or less, and more preferably to 0.2 or less. preferable.
  • the peak intensities IP2 of Cu and Cu 2 O are used. The CuO abundance ratio is specified.
  • Density 5.5 g / cm 3 or more and 7.5 g / cm 3 or less
  • the density of the sputtering target is 5.5 g / cm 3 or more, voids existing on the target sputtering surface can be reduced, and occurrence of abnormal discharge during sputtering can be suppressed.
  • the density of the sputtering target is 7.5 g / cm 3 or less, the workability is improved and the sputtering target is easily formed. Therefore, in this embodiment, defines the density of the sputtering target in the range of 5.5 g / cm 3 or more 7.5 g / cm 3 or less.
  • the lower limit of the density of the sputtering target is preferably 6.0 g / cm 3 or more, and more preferably 6.2 g / cm 3 or more. Further, in order to reliably ensure the workability of the sputtering target, it is preferable that the upper limit of the density of the sputtering target and 7.0 g / cm 3 or less, and more preferably set to 6.8 g / cm 3 or less.
  • the manufacturing method of the sputtering target which is this embodiment is demonstrated.
  • copper metal powder and copper oxide powder are prepared.
  • a metal copper powder having a purity of 4N or more it becomes possible to control the average particle diameter of the metallic copper phase in the sputtering target by adjusting the particle diameter of the metallic copper powder.
  • the average particle diameter of the metallic copper powder is in the range of 10 ⁇ m to 200 ⁇ m.
  • the copper oxide powder CuO powder, Cu 2 O powder, and it is possible to use these mixed powder. It is preferable to use CuO powder and Cu 2 O powder having a purity of 2N or more.
  • the average particle size of the CuO powder and Cu 2 O powder is preferably in the range of 1 ⁇ m to 30 ⁇ m.
  • the weighed metal copper powder and copper oxide powder are mixed by a mixing device such as a ball mill, a Henschel mixer, a rocking mixer, etc. to obtain a raw material powder.
  • a mixing device such as a ball mill, a Henschel mixer, a rocking mixer, etc.
  • the atmosphere in the mixing apparatus is preferably an inert gas atmosphere such as Ar.
  • the raw material powder described above is used to sinter by hot pressing or the like to obtain a sintered body.
  • the sputtering target which is this embodiment is manufactured by machining the obtained sintered compact.
  • the sintering temperature is preferably 600 ° C. or more and 900 ° C. or less
  • the holding time is preferably 30 min or more and 600 min or less
  • the pressing pressure is preferably 10 MPa or more and 50 MPa or less.
  • the reaction between CuO and Cu can be promoted by setting the sintering temperature to 720 ° C. or higher, and the CuO existing ratio in the sputtering target can be increased. It becomes possible to reduce.
  • the volume fraction of the copper oxide phase exceeds 80 vol%, the copper oxide phase is sufficiently present and sputtered in the presence of oxygen gas. Even if it does not perform, a copper oxide film
  • membrane can be formed into a film. Moreover, since the volume ratio of the copper oxide phase is in the range of 90 vol% or less and the particle size of the metal copper phase in the target structure is in the range of 10 ⁇ m or more and 200 ⁇ m or less, the metal copper phase is relatively uniform. Thus, the conductivity of the entire target is ensured. Thereby, a copper oxide film can be formed by DC sputtering.
  • the metallic copper phase is finely dispersed in the target, and the entire target is conductive. Can be secured. Thereby, DC sputtering can be performed stably.
  • the average particle diameter of the metallic copper phase is 10 ⁇ m or more, it is not necessary to excessively reduce the particle diameter of the metallic copper powder at the time of target production, and the oxidation of the metallic copper powder can be suppressed. Good ligation can be performed.
  • the metal copper phase is dispersed in an island shape, and the copper oxide phase existing between these metal copper phases reacts with the metal copper phase to act as a degenerate p-type semiconductor,
  • the target as a whole has the properties of a p-type semiconductor, and it is considered that conductivity is ensured. Therefore, a copper oxide film can be formed by DC sputtering.
  • the resistance value of the sputtering target is 10 ⁇ ⁇ cm or less, DC sputtering can be reliably performed.
  • the ratio I1 / I2 between the diffraction intensity I1 of CuO and the diffraction intensity I2 of Cu 2 O is 0.15 or less.
  • Cu 2 O is uniformly dispersed as a copper phase, and variation in resistance value in the target can be suppressed.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O is 0.03 or more.
  • the strength of the body is improved and the occurrence of cracks during production can be suppressed.
  • IP1 / IP2 is 0.4 or less, the abundance ratio of CuO is reduced in the copper oxide phase, and variation in resistance value in the target can be suppressed.
  • the density is 5.5 g / cm 3 or more, the occurrence of abnormal discharge during sputtering can be suppressed.
  • the density is 7.5 g / cm 3 or less, workability is ensured, and this sputtering target can be molded well.
  • the obtained raw material powder is sieved, it is filled into a hot press flat plate and a cylindrical mold, and the flat plate shape is cylindrical for 3 hours at a sintering temperature shown in Table 1 under a pressure of 200 kgf / cm 2. The shape was held for 5 hours.
  • the obtained sintered body was machined to produce an evaluation sputtering target (126 mm ⁇ 178 mm ⁇ 6 mm, cylindrical shape: ( ⁇ 155 mm ⁇ 135 mm) ⁇ 150 mmL). The following items were evaluated. The evaluation results are shown in Tables 1 and 2.
  • volume ratio of the copper oxide phase in the target The concentration (atomic%) of copper in the target is measured by a titration method, and the remainder is calculated as oxygen. The volume fraction with copper was calculated on the assumption that the calculated oxygen was present as the total amount of Cu 2 O. In addition, since it does not consider about a void
  • PN determination was performed with the PN determination device. If it is a flat plate shape, about one measurement point (1) in the target sputtering surface as shown in FIGS. 1 and 2, if it is a cylindrical shape, 1 in the target sputtering surface as shown in FIG. PN determination was performed for the measurement point at the location (1).
  • the determination results are shown in Table 2.
  • a PN determination device MODEL PN-01 manufactured by NP Corporation was used as the PN determination device, and PN determination was performed using a thermoelectromotive force type probe. The measurement temperature was 23 ⁇ 5 ° C., and the humidity was 50 ⁇ 20%.
  • the size of the metal copper phase particles in the structure of the sputtering target was confirmed from the IQ map obtained by EBSD.
  • the IQ map observed the cross-sectional range of 500 micrometers x 750 micrometers, and measured the particle size quantitatively.
  • EBSD collected the pattern using OIM Data Collection of TSL Solutions, Inc., and calculated the particle size using OIM Analysis 5.31 manufactured by the company.
  • X-ray diffraction analysis X-ray diffraction analysis
  • XRD X-ray diffraction analysis
  • X-ray photoelectron spectroscopy X-ray photoelectron spectroscopy
  • XPS X-ray photoelectron spectroscopy
  • ULVAC-PHI PHI5000 VersaProbeII X-ray source Monochromated AlK ⁇ 50W Path energy: 187.85 eV (Survey), 46.95, 58.7 eV (Profile) Measurement interval: 0.8 eV / step (Survey), 0.1, 0.125 eV / step (Profile) Photoelectron extraction angle with respect to sample surface: 45 deg Analysis area: About 200 ⁇ m ⁇
  • Target size ( ⁇ 155mm- ⁇ 135mm) ⁇ 150mmL (4 divisions)
  • Power supply DC2000W
  • Total pressure: 0.4Pa Sputtering gas: Ar 160 sccm
  • a sheet resistance ( ⁇ / sq) was measured by a four-probe method using a low resistivity meter (Loresta-GP) manufactured by Mitsubishi Chemical Corporation as a resistance measuring device.
  • the measurement temperature was 23 ⁇ 5 ° C., and the humidity was 50 ⁇ 20%.
  • the sample used for the measurement was produced under the above sputtering conditions.
  • the film was formed on a glass substrate with a target film thickness of 200 nm.
  • Comparative Example 1 and Comparative Example 3 in which the volume fraction of the copper oxide phase exceeded 90 vol%, the resistance value was high and DC sputtering could not be performed.
  • Comparative Example 2 and Comparative Example 4 in which the volume ratio of the copper oxide phase was 80 vol% or less, the resistance value of the formed copper oxide film was low, and the characteristics as the copper oxide film were insufficient.
  • Comparative Example 5 In Comparative Example 5 in which the variation with respect to the average resistance value on the target sputtering surface exceeded 50%, the number of abnormal discharges was large, and stable sputtering could not be performed. In Comparative Example 6 in which the particle size of the metallic copper phase is less than 10 ⁇ m, the number of abnormal discharges was large, and stable sputtering could not be performed. In Comparative Example 7 in which the particle size of the metallic copper phase exceeds 200 ⁇ m, the number of abnormal discharges was large, and stable sputtering could not be performed.
  • the ratio IP1 / IP2 between the peak intensity IP1 of CuO and the peak intensity IP2 of Cu and Cu 2 O was in the range of 0.03 or more and 0.4 or less. In -3, 7, 8, 10-14, 16, and 17, it was confirmed that the occurrence of cracks during production was suppressed.
  • a copper oxide film as an inorganic nano-coating layer for suppressing adhesion between adjacent films can be formed with high accuracy and high efficiency, and can be applied to conductive films such as touch sensors.

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Abstract

La présente invention concerne une cible de pulvérisation cathodique qui est caractérisée en ce qu'elle possède une phase de cuivre métallique et une phase de cuivre oxydée, la fraction volumique de la phase de cuivre oxydée se situant dans une plage de plus de 80 % en volume mais ne dépassant pas 90 % en volume, la variation de la valeur de résistance spécifique au niveau d'une surface de pulvérisation de la cible étant de 50 % ou moins par rapport à la valeur de résistance spécifique moyenne, et le diamètre des particules dans la phase de cuivre métallique dans la structure de la cible se situant dans la plage allant de 10 à 200 µm. Il est également préférable que la cible de pulvérisation cathodique ait les propriétés d'un semi-conducteur de type p.
PCT/JP2017/011207 2016-03-22 2017-03-21 Cible de pulvérisation cathodique WO2017164168A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020187021785A KR102237332B1 (ko) 2016-03-22 2017-03-21 스퍼터링 타깃
CN201780010079.8A CN108603284A (zh) 2016-03-22 2017-03-21 溅射靶

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016057461 2016-03-22
JP2016-057461 2016-03-22
JP2017-038734 2017-03-01
JP2017038734A JP6876268B2 (ja) 2016-03-22 2017-03-01 スパッタリングターゲット

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009280834A (ja) * 2008-05-19 2009-12-03 Ulvac Japan Ltd ターゲット、配線膜形成方法、薄膜トランジスタの製造方法
JP2011008912A (ja) * 2010-08-24 2011-01-13 Ulvac Japan Ltd 光ディスク用誘電体ターゲット及び成膜方法
CN103173733A (zh) * 2013-03-08 2013-06-26 北京航空航天大学 一种高导电性能Ag掺杂Cu2O基p型透明导电薄膜及其制备方法
WO2015170534A1 (fr) * 2014-05-08 2015-11-12 三井金属鉱業株式会社 Matériau de cible de pulvérisation cathodique
WO2016024526A1 (fr) * 2014-08-12 2016-02-18 東ソー株式会社 Corps fritté constitué d'oxyde et cible de pulvérisation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009280834A (ja) * 2008-05-19 2009-12-03 Ulvac Japan Ltd ターゲット、配線膜形成方法、薄膜トランジスタの製造方法
JP2011008912A (ja) * 2010-08-24 2011-01-13 Ulvac Japan Ltd 光ディスク用誘電体ターゲット及び成膜方法
CN103173733A (zh) * 2013-03-08 2013-06-26 北京航空航天大学 一种高导电性能Ag掺杂Cu2O基p型透明导电薄膜及其制备方法
WO2015170534A1 (fr) * 2014-05-08 2015-11-12 三井金属鉱業株式会社 Matériau de cible de pulvérisation cathodique
WO2016024526A1 (fr) * 2014-08-12 2016-02-18 東ソー株式会社 Corps fritté constitué d'oxyde et cible de pulvérisation

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