TWI488826B - An indium oxide sintered body, an indium oxide transparent conductive film, and a method for producing the transparent conductive film - Google Patents
An indium oxide sintered body, an indium oxide transparent conductive film, and a method for producing the transparent conductive film Download PDFInfo
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Description
本發明,係關於一種於可見光區域及紅外線區域具有高透射率且膜的電阻率低,並且可控制結晶化溫度之透明導電膜及其製造方法以及用以製作該透明導電膜之氧化物燒結體。
作為透明導電膜,添加有錫的氧化銦(以下,稱為ITO)由於具有低電阻率、高透射率之優異特性,因此被廣泛使用作為FPD(平板顯示器)等之電極材料。
然而,ITO由於載子濃度高、長波長區域的透射率差,因此作為近年來發展顯著之太陽電池用透明電極,未必有效。係由於太陽電池的光譜靈敏度,結晶矽型約至1200nm,CIGS(Cu-In-Ga-Se系)型約至1300nm,故要求此種長波長區域下具有高透射率。
此種狀況下,提出一種添加有二氧化鋯(zirconia)之氧化銦(以下,稱為IZrO),作為於長波長區域亦具有高透射率,且具有低電阻率之材料的選擇,以代替ITO。IZrO由於具有高遷移率且低載子濃度,因此於長波長區域亦可能維持較高透射率,故受到矚目。
迄今關於IZrO的報告,可列舉以下之文獻。於專利文獻1,具有添加鋯之氧化銦的記載。然而,其目的只在於提示可為替代ITO之低電阻率材料,而僅僅將氧化銦之添加物從錫置換成鋯而已。
於實施例,雖然有所得之膜的電阻率非常低的記載,但是載子濃度卻異常高達1021
cm-3
,故與ITO相同,長波長區域的透射率非常地低,並不佳。
對於二氧化鋯濃度,僅記載1種的結果,對於適當之二氧化鋯濃度則並未提及。又,對於成膜時的基板溫度,僅250℃及在室溫成膜後實施220℃之退火,沒有任何關於膜之結晶性的記載,完全沒有利用結晶性來控制蝕刻速度、或控制結晶化溫度的技術思想。又,濺鍍所使用之靶,雖然有「高密度」之記載,但是對於具體之值並無任何敘述。並且,對於體電阻亦無任何記載。而會對膜之電特性造成重大影響之濺鍍時的氣體,僅僅記載「於氬氣添加有微量之氧氣的混合氣體」。
於專利文獻2及3,具有添加有鋯之氧化銦的記載。然而,室溫成膜時之非晶質膜的電阻率高,另一方面,對於200℃成膜時之膜的電阻率則無記載。又,不具有藉由添加物之種類、濃度來控制膜之結晶化溫度等思想。並且,作為濺鍍靶之氧化物燒結體的密度雖高,但即使是最高者,相對密度亦僅為98.7%,為了要抑制長時間之濺鍍後所發生的結球,需要更進一步之高密度靶。
於專利文獻4,具有如下意思之記載:作為於長波長區域具有高透射率之氧化物透明導電膜,以氧化銦作為主成分且添加有鋯之膜之電子的遷移率、比電阻優異。然而,實施例之基板溫度,即使是650℃或更低,亦是高達450℃的高溫,實用上,若不在至少300℃以下,則在實際使用上會有相當大的限制。係由於基板材質上之限制及必須為了適當維持太陽電池之p-n界面的電子濃度分佈之故。
對添加二氧化鋯之氧化銦靶,包含燒結體密度、體電阻等一切的特性皆無記載。對此,若從實施例不是進行DC濺鍍而是進行RF濺鍍推測,則認為使用作為靶之燒結體的體電阻高。
於非專利文獻1及2,記載有添加二氧化鋯之氧化銦。然而,其內容與專利文獻4相同,基板溫度非常地高,又,沒有關於使用作為靶之燒結體密度的記載,與專利文獻4同樣地進行RF濺鍍。
如上述,迄今為止添加有二氧化鋯之氧化銦之燒結體,並不存在產業上認為必要之程度上足夠高密度且體電阻低的氧化物燒結體。且,並無為了提高膜(係使用此等之氧化物燒結體作為濺鍍靶,然後藉由濺鍍進行成膜而得)的蝕刻速度,而試著藉由添加物之種類、濃度來控制結晶化溫度。
專利文獻1:日本特開平6-160876號公報
專利文獻2:日本特開2002-226966號公報
專利文獻3:日本特開2002-373527號公報
專利文獻4:日本特開2007-273455號公報
非專利文獻1:表面科學Vol.29,No.1,pp.18-24,2008
非專利文獻2:Journal of Applied Physics,101,063705(2007)
本發明之目的,係提供一種於可見光區域及紅外線區域具有高透射率且膜的電阻率低、可控制結晶化溫度之透明導電膜及其製造方法以及用以製作該透明導電膜之氧化銦燒結體。
本發明人等經潛心研究的結果,發現藉由將特定原子濃度之鋯添加於氧化銦,除了可維持高透射率外,亦可降低電阻率,且藉由添加特定重量濃度之錫,可增加燒結體的密度,並且藉由添加特定原子濃度之鎂或/及鈣,可控制從氧化銦燒結體所製作之膜的結晶化溫度,從而完成本發明。
本發明基於此見解,提供:
1.一種氧化銦燒結體,含有鋯作為添加物,其特徵在於,鋯原子濃度相對於銦原子濃度與鋯原子濃度之總和的比率在0.5~4%的範圍,相對密度在99.3%以上,體電阻在0.5mΩ‧cm以下。
2.如上述1所記載之氧化銦燒結體,其中,除了上述添加物外,亦含有錫,錫原子濃度相對於銦原子濃度與鋯原子濃度與錫原子濃度之總和的比率在0.015~0.5%的範圍,相對密度在99.5%以上,體電阻在0.5mΩ‧cm以下。
3.如上述2所記載之氧化銦燒結體,其中,除了上述添加物外,更含有鎂及/或鈣,鎂原子濃度、或鈣原子濃度、或鎂與鈣的原子濃度總和,相對於全部金屬元素的原子濃度總和的比率在0.5~2.0%的範圍,相對密度在99.5%以上,體電阻在0.5mΩ‧cm以下。
本發明又提供:
4.一種氧化銦透明導電膜,含有鋯作為添加物,其特徵在於,鋯原子濃度相對於銦原子濃度與鋯原子濃度之總和的比率在0.5~4%的範圍,電阻率在8×10-4
Ω‧cm以下,電子遷移率在15cm2
/V‧s以上,於波長1200nm的透射率在85%以上,為非晶質。
5.如上述4所記載之氧化銦透明導電膜,其中,除了上述添加物外,亦含有錫,錫原子濃度相對於銦原子濃度與鋯原子濃度與錫原子濃度之總和的比率在0.015~0.5%的範圍,電阻率在8×10-4
Ω‧cm以下,電子遷移率在15cm2
/V‧s以上,於波長1200nm的透射率在85%以上,為非晶質。
6.如上述5所記載之氧化銦透明導電膜,其中,除了上述添加物外,更含有鎂及/或鈣,鎂原子濃度、或鈣原子濃度、或鎂與鈣的原子濃度總和相對於全部金屬元素的原子濃度總和的比率在0.5~2.0%的範圍,電阻率在8×10-4
Ω‧cm以下,電子遷移率在15cm2
/V‧s以上,於波長1200nm的透射率在85%以上,為非晶質。
7.如上述4~6中任一項所記載之氧化銦透明導電膜,其結晶化溫度在150℃~260℃的範圍。
8.一種氧化銦透明導電膜,含有鋯作為添加物,其特徵在於,鋯原子濃度相對於銦原子濃度與鋯原子濃度之總和的比率在0.5~4%的範圍,電阻率在4×10-4
Ω‧cm以下,電子遷移率在50cm2
/V‧s以上,於波長1200nm的透射率在90%以上,為結晶質。
9.如上述8所記載之氧化銦透明導電膜,其中,除了上述添加物外,亦含有錫,錫原子濃度相對於銦原子濃度與鋯原子濃度與錫原子濃度之總和的比率在0.015~0.5%的範圍,電阻率在4×10-4
Ω‧cm以下,電子遷移率在50cm2
/V‧s以上,於波長1200nm的透射率在90%以上,為結晶質。
10.如上述9所記載之氧化銦透明導電膜,其中,除了上述添加物外,更含有鎂及/或鈣,鎂原子濃度、或鈣原子濃度、或鎂與鈣的原子濃度總和,相對於全部金屬元素的原子濃度之比率在0.5~2.0%的範圍,電阻率在4×10-4
Ω‧cm以下,電子遷移率在50cm2
/V‧s以上,於波長1200nm的透射率在90%以上,為結晶質。
本發明進一步提供:
11.一種氧化銦透明導電膜之製造方法,係藉由濺鍍以製造氧化銦透明導電膜之方法,其特徵在於,在由氬與氧所構成且氧濃度未達1%的混合氣體環境氣氛中,不對基板進行加熱或是將基板保持在150℃以下,藉由濺鍍將上述1~3所記載之氧化物燒結體在基板上形成非晶質膜。
12.一種氧化銦透明導電膜之製造方法,係藉由濺鍍以製造氧化銦透明導電膜之方法,其特徵在於,在由氬與氧所構成且氧濃度未達1%的混合氣體環境氣氛中,不對基板進行加熱或是將基板保持在150℃以下,藉由濺鍍將上述1~3所記載之氧化物燒結體在基板上形成非晶質膜,對該膜進行蝕刻形成電路圖案後,以結晶化溫度以上之溫度進行退火,藉此使膜結晶化。
13.一種氧化銦透明導電膜之製造方法,係藉由濺鍍以製造氧化銦透明導電膜之方法,其特徵在於,在由氬與氧所構成且氧濃度未達1%的混合氣體環境氣氛中,將基板保持在結晶化溫度以上之溫度,藉由濺鍍將上述1~3所記載之氧化物燒結體在基板上形成結晶化之膜。
根據本發明,由於可提供一種高密度燒結體,當以此燒結體作為濺鍍靶使用時,具有下述優異之效果:即使於長時間之濺鍍後,亦可抑制靶表面之結球的發生,且具有防止濺鍍時發生異常放電、粒子(particle)等之效果。
又,對本發明之氧化銦燒結體進行濺鍍所形成之膜,由於可控制結晶化溫度,因此可得到以所需之結晶化溫度所形成之膜。
又,由於可藉由濺鍍將成膜後之膜整體形成為非晶質,因此適於無殘渣地蝕刻該膜,退火後,由於膜結晶化,變成低電阻率,故非常適用作為太陽電池用透明導電膜。
本發明中原子濃度之比率,係指特定元素的原子濃度相對於包含特定元素之複數元素的原子濃度總和的比例之意。
此處,複數元素,係指當特定元素為鋯時,為銦與鋯,當特定元素為錫時,為銦與鋯與錫,當特定元素為鎂及/或鈣時,為燒結體中所含之全部金屬元素之意。
本發明之氧化物燒結體中之鋯原子濃度相對於銦原子濃度與鋯原子濃度之總和的比率,較佳在0.5~4%的範圍。
若鋯原子濃度的比率未達0.5%,則由於作為釋放電子使載子濃度増加之摻雜物的鋯將會減少,導致載子濃度不夠充分,而造成從該氧化物燒結體所製作之膜的電阻率上升。
另一方面,若鋯原子濃度的比率超過4%,則將不會從所添加之鋯釋放出作為載子之電子,中性雜質的散亂會加劇,因遷移率的降低而導致高電阻率。
本發明之錫原子濃度相對於銦原子濃度與鋯原子濃度與錫原子濃度之總和的比率,較佳在0.015~0.5%的範圍。
若錫原子濃度的比率未達0.015%,則將會無法充分提高氧化銦燒結體的密度。
另一方面,若錫原子濃度超過0.5%,則無法進一步提升燒結密度,又,錫由於會成為高載子濃度的原因,而會造成在長波長區域的透射率降低。
本發明之鎂原子濃度相對於全部金屬元素的原子濃度總和的比率,較佳在0.5~2.0%的範圍。
若鎂原子濃度的比率未達0.5%,則幾乎沒有提高結晶化溫度的效果,而在成膜後之膜中發生濺鍍所致結晶化的部分,產生此部分在蝕刻時以殘渣之形態殘留的不良情形。
另一方面,若鎂原子濃度的比率超過2.0%,則結晶化溫度將會變得過高,而在加熱製程的手續、時間等發生不良情形。
本發明之鈣原子濃度的比率的較佳範圍與鎂一樣,鈣與鎂同樣,具有提高膜之結晶化溫度的效果。
因此,不僅單獨添加鎂或鈣,即使添加此等之兩者,亦具有提高膜之結晶化溫度的效果。此時之鎂與鈣的原子濃度合計的的比率,較佳亦為與前述鎂原子濃度之比率的範圍一樣。
製造本發明之非晶質膜的方法,無論是對基板無加熱或有加熱,皆必須以膜不會發生結晶化之程度的低溫藉由濺鍍來進行成膜。係由於若基板溫度高,則成膜後之膜的一部份將會結晶化的緣故。
又,濺鍍中之環境氣氛氣體種類,可僅使用氬,或可使用氬與氧的混合氣體。使用混合氣體時,氧濃度較佳在1%以下。
係由於若氧濃度超過1%,則成膜所得之膜的電阻率將會變低,之後,即使進行退火,亦無法充分降低電阻率,而使得最後所得之膜的電阻率變高之故。
本發明之結晶化膜,與非晶質膜相較之下,由於結晶化會使遷移率増加,而使得電阻率較低。結晶化的方法,具有對非晶質膜以其結晶化溫度以上之溫度進行退火(加熱)的方法,又,當沒有蝕刻步驟時,具有一邊對成膜時之基板溫度以結晶化溫度附近或其以上之溫度進行加熱,一邊自成膜時使之結晶化的方法。
本發明之氧化銦燒結體、非晶質氧化銦透明導電膜及結晶質氧化銦透明導電膜,例如,可以下述方法來進行製作。
首先,使用氧化銦(In2
O3
)、氧化鋯(ZrO2
)、及視需要之氧化錫(SnO2
)、氧化鎂(MgO)、氧化鈣(CaO)作為原料粉。
此等之原料粉,較佳為使用比表面積為10m2
/g左右者。係由於若比表面積較小,則粒徑將會變大,而無法充分提升燒結體的密度。
接著,將此等之原料粉秤量成特定的濃度比,進行混合。若混合不充分,則各成分會偏析於燒結體,而存在高電阻率區域與低電阻率區域。尤其是於高電阻率區域,由於在濺鍍成膜時會發生因帶電所致之電弧作用(異常放電),故為了消除此現象,必須充分地加以混合。
例如,可以快速混合機(super mixer)於大氣中,旋轉數2000~4000rpm,旋轉時間3~5分鐘,來進行混合。原料粉由於為氧化物,因此環境氣氛氣體不必特別防止原料的氧化,故不必使用氬等高價的氣體,即使於大氣中亦不會有問題。
混合方法,其他亦可使用以球磨機來進行長時間混合的方法。又,其他方法若亦可達到原料均勻混合的目的,則無論使用任何方法亦不會有問題。
接著,進行微粉碎。在此,於微粉碎前,亦可先進行煅燒步驟,可藉由進行煅燒以提升燒結密度。
微粉碎,係為了使原料粉之各組成於燒結體中均勻地分散。若不充分地進行微粉碎,則會存在粒徑大的原料粉,根據位置產生組成不均,而成為濺鍍成膜時之異常放電的原因。
具體而言,可將煅燒粉與二氧化鋯珠粒一起投入磨碎機,然後以旋轉數200~400rpm、旋轉時間2~4小時,進行微粉碎。微粉碎宜為進行至原料粉之粒徑以平均粒徑(D50)計,在1μm以下,較佳在0.6μm以下。
接著,進行造粒。藉此,可使原料粉的流動性良好,而使得加壓成型時的填充狀況良好。對經微粉碎之原料調整水分量,以成為固體成分40~60%的漿料,進行造粒。此時,較佳將入口溫度設定為180~220℃,出口溫度設定為110~130℃。
然後,進行加壓成型。可對造粒粉以400~800kgf/cm2
之面壓力、保持1~3分鐘的條件進行加壓成形。係由於若面壓力未達400kgf/cm2
,則無法得到高密度之成形體的緣故。另一方面,由於即使面壓力超過800kgf/cm2
,亦無法得到更高的密度,而浪費無謂的能量、成本,因此在生產上並不佳。
接著,使用靜水壓加壓裝置(CIP)以1700~1900kgf/cm2
之面壓力、保持1~3分鐘的條件進行成形,然後,藉由在電氣爐,於氧環境氣氛中以1400~1600℃保持10~30小時,來進行燒結。可藉此製作氧化物燒結體。
燒結體的密度,以阿基米德法測得後,藉由除以理論密度,可求得相對密度。又,燒結體的體電阻,可以4端子法來進行測量。
接著,所得之燒結體,可藉由研磨等加工成特定形狀的濺鍍靶。又,可對其於氬環境氣氛中、0.5Pa的壓力下,特別是不對玻璃基板加熱下,藉由濺鍍進行成膜,得到非晶質之透明導電膜。
可對此非晶質導電膜,於氮環境氣氛中,以200~300℃,進行退火約1小時。係由於可使非晶質之透明導電膜結晶化,而得到結晶質之透明導電膜的緣故。
膜的電阻率、遷移率可以霍爾量測(Hall measurement)求得。又,透射率則可以光譜透射計來加以測量。膜的結晶化溫度,可將膜於氮環境氣氛中自150℃間隔5℃保持1小時後取出,從膜的XRD繞射波峰之有無與膜電阻率的減少樣子來決定,將出現XRD繞射波峰、電阻率遽減之溫度作為結晶化溫度。
退火後之電阻率、遷移率的測量,係對以上述方式所決定之結晶化溫度高30℃的溫度,於氮環境氣氛中退火1小時後之膜,進行霍爾量測來求得。
實施例
(實施例1)
秤量平均粒徑約為2.0μm的氧化銦(In2
O3
)原料粉及氧化鋯(ZrO2
)原料粉,使鋯原子濃度相對於銦原子濃度與鋯原子濃度之總和的比率為1%後,以快速混合機,於大氣中,旋轉數3000rpm,旋轉時間3分鐘,進行混合。然後,將此混合粉與二氧化鋯珠粒一起投入磨碎機,以旋轉數300rpm、旋轉時間3小時,進行微粉碎,使平均粒徑(D50)為0.8μm。對經微粉碎之原料調整水分量,以成為固體成分50%的漿料,將入口溫度設定為200℃,出口溫度設定為120℃,進行造粒。並且,對此造粒粉以600kgf/cm2
之面壓力、保持1分鐘的條件進行加壓成形後,使用靜水壓加壓裝置(CIP)以1800kgf/cm2
之面壓力、保持1分鐘的條件進行成形。然後,藉由在電氣爐,於氧環境氣氛中以1550℃保持20小時,對此成形品進行燒結。所得之燒結體的相對密度為99.3%,體電阻為0.47mΩ‧cm。
對此燒結體進行研磨等使之成為直徑6吋、厚度6mm之圓板狀,然後加工成濺鍍靶。將此靶安裝於濺鍍裝置內,於氬環境氣氛中,0.5Pa的壓力下,藉由濺鍍成膜於無加熱的玻璃基板上,藉此得到非晶質的透明導電膜。
對此膜進行霍爾量測,電阻率為0.765mΩ‧cm,遷移率為15.2cm2
/V‧s,由於沒有XRD繞射波峰,因此確認膜為非晶質。又此時,膜的透射率相對於波長1200nm,為86.7%。
將所得之非晶質的透明導電膜於氮環境氣氛中退火1小時,對膜進行霍爾量測及XRD繞射測定,當加熱溫度為155℃時,由於膜的電阻率遽減及出現XRD繞射波峰,因此將此膜的結晶化溫度認定為155℃。
然後,以高於此結晶化溫度30℃之溫度的185℃進行退火後,對膜進行霍爾量測,電阻率為0.395mΩ‧cm,遷移率為68.5cm2
/V‧s,於波長1200nm之透射率為92.1%。
(實施例2~4、比較例1~2)
燒結體的製造方法及透明導電膜的製造方法與實施例1相同,僅改變鋯原子濃度的比率。其結果示於表1。由此結果可知,若鋯原子濃度的比率在0.5~4%的範圍外,則藉由濺鍍而成膜後及退火後之膜的電阻率高,遷移率變低,故作為透明導電膜之性質並不佳。又,可知即使是在未添加錫的情形,相對密度亦在99.3%以上,並且密度高達99.5%以上。
(實施例5~8、比較例3)
燒結體的製造方法及透明導電膜的製造方法與實施例1相同,使鋯原子濃度的比率為2%,僅改變錫原子濃度的比率。其結果示於表1。由此結果可知,雖然即使如實施例1般錫濃度為零的情形,相對密度亦高達99.3%,但是因進一步添加錫,而會使相對密度在99.5%以上,甚至在99.7%以上,變成更高密度。另一方面,可知錫原子濃度的比率在0.5%以上之密度提升為飽和。
(實施例9~20、比較例4~6)
燒結體的製造方法及透明導電膜的製造方法與實施例1相同,使鋯原子濃度的比率為2%,錫原子濃度的比率為0.12%,改變鎂原子濃度的比率或/或鈣原子濃度的比率。其結果示於表1。由此結果可知,藉由添加此等之元素,可提高結晶化溫度。另一方面,可知若此等之元素濃度超過2.0%,則結晶化溫度會過高,並不佳。
(比較例7)
燒結體的製造方法及透明導電膜的製造方法與實施例1相同,使鋯原子濃度的比率為2%,錫原子濃度的比率為0.12%,並不添加鎂等,濺鍍時的環境氣氛氣體為氧1%。其結果示於表1。由此結果可知,若氧濃度高,則成膜後及結晶化後之膜的電阻率將會變高,遷移率將會變低。
(比較例8~9)
燒結體的製造方法及透明導電膜的製造方法與實施例1相同,使用氧化銦原料粉及氧化錫原料粉,使氧化錫原料粉的添加量與一般的ITO同程度。比較例8,係使濺鍍成膜時的氧濃度為0%,比較例9,則使濺鍍成膜時的氧濃度為1%。
燒結體、膜特性的結果,如表1所記載。由結果可知,ITO與本發明相較之下,當為同等之電阻率的情形時,由於遷移率較小,故載子濃度較高,於長波長(1200nm)的透射率會變低,並不佳。
(比較例10~11)
燒結體的製造方法及透明導電膜的製造方法與實施例1相同,使燒結溫度為1350℃。比較例10,係使鋯原子濃度的比率為2%,比較例11,則使鋯原子濃度的比率為2%,錫原子濃度的比率為0.12%。
燒結體、膜特性的結果,如表1所記載。由此結果可知,降低燒結溫度,相對密度會變低,自體電阻高的燒結體濺鍍成膜之膜,電阻率較高,於長波長(1200nm)的透射率會變低,並不佳。
產業上之可利用性
本發明之氧化銦燒結體由於為高密度,故在作為濺鍍靶使用時,可抑制其表面發生結球,防止濺鍍時之異常放電。又,本發明之氧化銦燒結體,由於體電阻率低,因此可降低由濺鍍所形成之膜的電阻率,適於作為透明導電膜形成用。
並且,本發明之氧化銦透明導電膜,於可見光區域及紅外線區域透射率高,且電子遷移率高,膜的電阻率低,因此極適於作為太陽電池用透明導電膜。
Claims (12)
- 一種氧化銦燒結體,含有鋯與錫作為添加物,其特徵在於:鋯原子濃度相對於銦原子濃度與鋯原子濃度之總和的比率在0.5~4%的範圍,且錫原子濃度相對於銦原子濃度與鋯原子濃度與錫原子濃度之總和的比率在0.015~0.5%的範圍,相對密度在99.3%以上,體電阻在0.5mΩ‧cm以下。
- 如申請專利範圍第1項之氧化銦燒結體,其中,除了該添加物外,更含有鎂及/或鈣,鎂原子濃度、或鈣原子濃度、或鎂與鈣的原子濃度總和,相對於全部金屬元素的原子濃度總和的比率在0.5~2.0%的範圍,相對密度在99.5%以上,體電阻在0.5mΩ‧cm以下。
- 一種氧化銦透明導電膜,含有鋯作為添加物,其特徵在於:鋯原子濃度相對於銦原子濃度與鋯原子濃度之總和的比率在0.5~4%的範圍,電阻率在8×10-4 Ω‧cm以下,電子遷移率在15cm2 /V‧s以上,於波長1200nm的透射率在85%以上,為非晶質。
- 如申請專利範圍第3項之氧化銦透明導電膜,其中,除了該添加物外,亦含有錫,錫原子濃度相對於銦原子濃度與鋯原子濃度與錫原子濃度之總和的比率在0.015~0.5%的範圍,電阻率在8×10-4 Ω‧cm以下,電子遷移率在15cm2 /V‧s以上,於波長1200nm的透射率在85%以上, 為非晶質。
- 如申請專利範圍第4項之氧化銦透明導電膜,其中,除了該添加物外,更含有鎂及/或鈣,鎂原子濃度、或鈣原子濃度、或鎂與鈣的原子濃度總和,相對於全部金屬元素的原子濃度總和的比率在0.5~2.0%的範圍,電阻率在8×10-4 Ω‧cm以下,電子遷移率在15cm2 /V‧s以上,於波長1200nm的透射率在85%以上,為非晶質。
- 如申請專利範圍第3至5項中任一項之氧化銦透明導電膜,其結晶化溫度在150℃~260℃的範圍。
- 一種氧化銦透明導電膜,含有鋯作為添加物,其特徵在於:鋯原子濃度相對於銦原子濃度與鋯原子濃度之總和的比率在0.5~4%的範圍,電阻率在4×10-4 Ω‧cm以下,電子遷移率在50cm2 /V‧s以上,於波長1200nm的透射率在90%以上,為結晶質。
- 如申請專利範圍第7項之氧化銦透明導電膜,其中,除了該添加物外,亦含有錫,錫原子濃度相對於銦原子濃度與鋯原子濃度與錫原子濃度之總和的比率在0.015~0.5%的範圍,電阻率在4×10-4 Ω‧cm以下,電子遷移率在50cm2 /V‧s以上,於波長1200nm的透射率在90%以上,為結晶質。
- 如申請專利範圍第8項之氧化銦透明導電膜,其中,除了該添加物外,更含有鎂及/或鈣,鎂原子濃度、或鈣原子濃度、或鎂與鈣的原子濃度總和,相對於全部金屬元 素的原子濃度之比率在0.5~2.0%的範圍,電阻率在4×10-4 Ω‧cm以下,電子遷移率在50cm2 /V‧s以上,於波長1200nm的透射率在90%以上,為結晶質。
- 一種氧化銦透明導電膜之製造方法,係藉由濺鍍以製造氧化銦透明導電膜之方法,其特徵在於:在由氬與氧所構成且氧濃度未達1%的混合氣體環境氣氛中,不對基板進行加熱或是將基板保持在150℃以下,藉由濺鍍將申請專利範圍第1或2項之氧化物燒結體在基板上形成非晶質膜。
- 一種氧化銦透明導電膜之製造方法,係藉由濺鍍以製造氧化銦透明導電膜之方法,其特徵在於:在由氬與氧所構成且氧濃度未達1%的混合氣體環境氣氛中,不對基板進行加熱或是將基板保持在150℃以下,藉由濺鍍將申請專利範圍第1或2項之氧化物燒結體在基板上形成非晶質膜,對該膜進行蝕刻形成電路圖案後,以結晶化溫度以上之溫度進行退火,藉此使膜結晶化。
- 一種氧化銦透明導電膜之製造方法,係藉由濺鍍以製造氧化銦透明導電膜之方法,其特徵在於:在由氬與氧所構成且氧濃度未達1%的混合氣體環境氣氛中,將基板保持在結晶化溫度以上之溫度,藉由濺鍍將申請專利範圍第1或2項之氧化物燒結體在基板上形成結晶化之膜。
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WO2011043235A1 (ja) | 2011-04-14 |
EP2428500A4 (en) | 2013-01-23 |
CN102471160B (zh) | 2016-05-18 |
US9589695B2 (en) | 2017-03-07 |
EP2428500A1 (en) | 2012-03-14 |
JPWO2011043235A1 (ja) | 2013-03-04 |
TW201113234A (en) | 2011-04-16 |
US8771557B2 (en) | 2014-07-08 |
CN105439541B (zh) | 2018-09-14 |
US20120043509A1 (en) | 2012-02-23 |
US10037830B2 (en) | 2018-07-31 |
US20140264197A1 (en) | 2014-09-18 |
US20170133116A1 (en) | 2017-05-11 |
JP5349587B2 (ja) | 2013-11-20 |
KR20110127221A (ko) | 2011-11-24 |
EP2428500B1 (en) | 2018-02-28 |
KR101274279B1 (ko) | 2013-06-13 |
CN105439541A (zh) | 2016-03-30 |
CN102471160A (zh) | 2012-05-23 |
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