WO2003082769A1 - Produit fritte de monoxyde de silicium et cible de pulverisation contenant celui-ci - Google Patents

Produit fritte de monoxyde de silicium et cible de pulverisation contenant celui-ci Download PDF

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Publication number
WO2003082769A1
WO2003082769A1 PCT/JP2003/003894 JP0303894W WO03082769A1 WO 2003082769 A1 WO2003082769 A1 WO 2003082769A1 JP 0303894 W JP0303894 W JP 0303894W WO 03082769 A1 WO03082769 A1 WO 03082769A1
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Prior art keywords
silicon monoxide
sintered body
silicon
powder
film
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PCT/JP2003/003894
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English (en)
Japanese (ja)
Inventor
Yoshitake Natsume
Tadashi Ogasawara
Munetoshi Watanabe
Kazuomi Azuma
Toshiharu Iwase
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Sumitomo Titanium Corporation
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Publication date
Application filed by Sumitomo Titanium Corporation filed Critical Sumitomo Titanium Corporation
Priority to JP2003580242A priority Critical patent/JP4235114B2/ja
Priority to AU2003220872A priority patent/AU2003220872A1/en
Publication of WO2003082769A1 publication Critical patent/WO2003082769A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/40—Metallic constituents or additives not added as binding phase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/421—Boron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/428—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/79—Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance

Definitions

  • Sintered silicon monoxide and sputtering target comprising the same
  • the present invention relates to a silicon monoxide sintered body and a sputtering target comprising the same, and more particularly, to an optical protective film for preventing gas permeation of transparent plastic, preventing Na elution of glass, or protecting a lens surface.
  • the present invention relates to a silicon monoxide sintered body to be used and a sputtering target comprising the same. Background art
  • Silicon oxide-based thin films such as SiO 2 film or SiO 2 (1 ⁇ X ⁇ 2) film have excellent electrical insulation and high mechanical strength, so they are used as barrier films for various optical components. It is also used as a protective film to prevent gas permeation of transparent plastic because it is transparent and has excellent gas barrier properties.
  • S i O 2 film or S i O x film when forming a film on the substrate material, silicon and (S i), silicon monoxide (S io) and silicon dioxide (S io 2) a sputtering target Reactive sputtering is performed.
  • the reactive sputtering method a bipolar direct current reactive sputtering method and a high frequency reactive sputtering method are used as typical methods.
  • N 2 and O 2 are mixed and introduced into an inert gas such as Ar under reduced pressure, and a DC high voltage is applied between the electrodes.
  • an inert gas such as Ar under reduced pressure
  • the inert gas Due to such discharge, the inert gas is ionized and collides with the cathode side at a high speed, causing the substance (target) disposed on the cathode to fly out.
  • the protruding substance becomes nitride or oxide and deposits on the surface of the substrate. To form a thin film.
  • the high-frequency reactive sputtering method generates a high-frequency glow discharge by applying a high-frequency voltage of 50 kHz or more instead of the DC high voltage applied in the two-pole DC reactive sputtering method, This is a method of forming a thin film on the surface of the substrate in the same manner as described above.
  • the above-described bipolar direct-current reactive sputtering method has the advantages of simple equipment and operation and a high film formation rate.
  • a high-resistance substance or an insulator is used as a target, the target is exposed to positive ions. Charging makes sputtering impossible.
  • the above-described high-frequency reactive sputtering method uses high-frequency discharge, so that even when an insulator or the like is used as a target, the glow discharge is maintained, so that a thin film can be formed.
  • the high-frequency reactive sputtering method has a lower deposition rate than the two-pole DC reactive sputtering method, and has a complicated power supply configuration, which results in high equipment production costs. I am concerned about the reliability and maintainability of the For this reason, this method has a problem that it is difficult to stably obtain a high-frequency current.
  • a heterogeneous material is mixed at the time of sputtering because the sintered body is made of a mixture of different materials. Films are formed at the same time, and the film characteristics change. Furthermore, since it is a mixed sintered body, the specific resistance of the sputtering target is not uniform, and problems such as unstable film formation occur. Disclosure of the invention
  • Si can be easily reduced in resistance by doping boron (B), phosphorus (P), or antimony (Sb) at the stage of growing a single crystal.
  • the doped Si powder can be formed into a film by a DC reactive sputtering method while introducing oxygen using a DC sputtering apparatus.
  • the sintered body S i O 2 in the sputtering target because there is no conductive material is deposited by RF reactive sputtering method.
  • the present invention has been made in view of the problem when a conventional silicon oxide-based thin film is formed by a reactive sputtering method. It can be applied to equipment, secures the deposition rate, stabilizes the characteristics of the deposited film, and enables the deposition of a thin film of a single composition without using different materials. It is an object of the present invention to provide a silicon monoxide sintered body and a sputtering target comprising the same.
  • the present inventors have conducted various studies on a method of forming a silicon oxide-based thin film in order to solve the above-mentioned problem.
  • a conductive silicon monoxide sintered body can be manufactured.
  • a silicon oxide-based thin film could be formed by applying a sputtering device using a DC power supply.
  • the stability of the characteristics of the film to be formed can be ensured, and at the same time, the film forming speed can be increased to improve the productivity, and a good sputtering rate (film forming efficiency) can be obtained.
  • the present invention has been completed based on the above findings, and includes the following (1) to
  • the gist of the present invention is a sputtering target comprising a silicon monoxide sintered body of (4) and a silicon monoxide sintered body of (5).
  • a silicon monoxide sintered body characterized in that a raw material powder is formed by combining a silicon powder doped with boron, phosphorus or antimony and a silicon monoxide powder.
  • Mass 0 /. Containing 20 to 80% of silicon powder (S i) doped with boron (B), phosphorus (P) or antimony (S b), with the balance being silicon monoxide (S i O) or silicon monoxide.
  • a material powder comprising a mixture of silicon dioxide (S i O and S i O 2 ) having a content of silicon monoxide (S i O) of 20% or more in the mixture is formed. It is a silicon sintered body.
  • the silicon monoxide sintered body of the above (1) to (3) has a bulk density of 95% or more after sintering.
  • the silicon monoxide sintered body of the present invention is characterized by containing 20 to 80% by mass of Si powder doped with B, P or Sb. More preferably, the content is 30 to 60%.
  • the sintered body has conductivity, and thus can be used as a target of a DC power source sputtering apparatus.
  • the characteristics of the formed film are less scattered, and a good sputter rate can be obtained.
  • Sio powder By including doped Si powder, some parts of the Sio powder come into contact with each other and exhibit conductivity, but during mixed sintering, part of the Sio is thermally decomposed inside or on the surface of the Sio powder. I do.
  • the thermal conductivity of P or Sb further improves the electrical conductivity. This point can be confirmed from the results of experiments conducted by the inventors, in which the specific resistance of the sintered body rapidly decreases as the sintering temperature is increased.
  • the lower limit of the content of the doped Si powder is set to 20%, preferably 30%.
  • doped S i The upper limit of the powder content was set to 80%, and preferably 60%.
  • the sintered body of the present invention it is essential to mix the Si powder and the SiO powder doped as the raw material powder.
  • the mixed material of S i powder and S i O powder doped it is effective for mixing the S i 0 2 powder. Even in this case, in order to make the film characteristics of the target uniform without losing the characteristics of SiO,
  • the content of Sio powder must be 20% or more. Desirably, it is 30% or more.
  • the average particle diameter of the raw material powder of the silicon monoxide sintered body be reduced from the viewpoint of improving the sinterability, making the conductive properties uniform, and making the film composition uniform.
  • the average particle size of the raw material powder is in the range of 0.1 to 20 ⁇ .
  • the specific gravity of the doped Si powder contained in the silicon monoxide sintered body of the present invention is 0.01 ⁇ ⁇ cm (high resistivity) to 0,000 lQ'cm (low resistance). Rate) is desirable. If the resistance is too high, sufficient conductive properties cannot be secured, and if the resistance is too low, the material cost becomes too expensive.
  • the doping method using B, P, or Sb is not particularly limited, and may be any method that is usually employed in the stage of growing a silicon single crystal. The doping amount of B, P or Sb is added so that the grown Si single crystal satisfies the above specific resistance.
  • the silicon monoxide sintered body of the present invention is a powder mainly composed of SiO 2, that is,
  • the resulting powder was 100 kg Zc m 2 or more
  • it is manufactured by firing under pressure at a temperature of 1250 to 1400 ° C while pressurizing at a pressure of 1250 ° C.
  • the sintering temperature is preferably set to 1250 to 1400 ° C, more preferably 1300 to 1400 ° C.
  • Si powder whose specific resistance was adjusted to 0.0004 ⁇ ⁇ cm by doping with B was used. Both the Si powder and the Sio powder were pulverized until the average particle diameter became 10 ⁇ m or less.
  • This S i powder is contained in a range of 10 to 90% in the S i O Powder, while applying a pressure of the resulting powder 9. 8 MP a (1 00 kgf / cm 2), 1400 ° C After sintering under pressure for 2 hours, it was machined to ⁇ ) 6 inches X t 5 mm to obtain a sputtering target.
  • the surface resistivity and the density ratio of each sintered body obtained under the above conditions were measured, and further, using this sintered body as a target, performing reactive sputtering using a DC power supply to perform monoxide oxidation Form a silicon film (SiO film) and hit for unit time
  • the sputter rate of the film thickness was measured, and variations in film characteristics were observed.
  • the surface resistivity was measured by a four-terminal method, and the density ratio was indicated by (bulk density theoretical density) X I 00%. Variations in the film characteristics are observed from the measurement results of the transmittance and the refractive index. The above measurement results and observation results are shown in Table 1.
  • the resistivity of the sintered body can be reduced to be applied to a DC reactive sputtering apparatus, and a stable film characteristic can be secured while securing a film forming rate. be able to.
  • the resistivity of the sintered body can be reduced to directly Because it can be applied to flow reactive sputtering equipment, it secures the deposition rate and stabilizes the characteristics of the deposited film.Furthermore, it does not use different materials and forms a thin film with a single composition. be able to. Therefore, if a sputtering target made of this silicon monoxide sintered body is used, a good sputtering rate and a sputtering reaction with little variation in film characteristics are guaranteed. As a result, it can be widely applied as an optical protective film for preventing gas permeation of transparent plastic, preventing Na elution of glass, or for forming a silicon oxide-based thin film used as a protective film on a lens surface.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

L'invention concerne un produit fritté de monoxyde de silicium préparé par formation d'une poudre de matière première consistant en 20 à 80 % en masse d'une poudre de silicium dopée avec du bore, du phosphore ou de l'antimoine, le reste étant constitué de monoxyde de silicium ou d'un mélange de monoxyde de silicium et de dioxyde de silicium. La teneur en monoxyde de silicium dans le mélange est égale ou supérieure à 20 %. L'invention concerne également une cible de pulvérisation mettant en oeuvre ce produit fritté de monoxyde de silicium. Cette cible de pulvérisation peut être utilisée pour assurer une vitesse élevée satisfaisante de formation de film tout en permettant d'obtenir un film dans lequel les variations de caractéristiques sont réduites. Ainsi cette cible de pulvérisation peut être utilisée largement et de façon avantageuse pour former un film fin d'oxyde de silicium en tant que film protecteur pour une utilisation optique, par exemple, pour empêcher la pénétration de gaz dans un plastique transparent, pour empêcher la dissolution du Na d'un verre et pour protéger la surface d'une lentille.
PCT/JP2003/003894 2002-04-02 2003-03-27 Produit fritte de monoxyde de silicium et cible de pulverisation contenant celui-ci WO2003082769A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003580242A JP4235114B2 (ja) 2002-04-02 2003-03-27 焼結体及びこれからなるスパッタリングターゲット
AU2003220872A AU2003220872A1 (en) 2002-04-02 2003-03-27 Silicon monoxide sintered product and sputtering target comprising the same

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Application Number Priority Date Filing Date Title
JP2002099515 2002-04-02
JP2002-99515 2002-04-02

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AU (1) AU2003220872A1 (fr)
TW (1) TWI276696B (fr)
WO (1) WO2003082769A1 (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007022275A2 (fr) 2005-08-11 2007-02-22 Wintek Electro-Optics Corporation Cibles de pulverisation cathodique de siox:si et leurs procedes d'elaboration et d'utilisation
JP2007053084A (ja) * 2005-07-21 2007-03-01 Sumitomo Titanium Corp リチウム二次電池用負極の製造方法
EP1925003A2 (fr) * 2005-08-11 2008-05-28 Wintek Electro-Optics Corporation Compositions de materiau composite de siox:si et leurs procedes d'elaboration
JP2009215125A (ja) * 2008-03-12 2009-09-24 Shin Etsu Chem Co Ltd フィルム蒸着用酸化珪素焼結体、その製造方法、及び酸化珪素蒸着フィルムの製造方法
US7658822B2 (en) 2005-08-11 2010-02-09 Wintek Electro-Optics Corporation SiOx:Si composite articles and methods of making same
JP2011063826A (ja) * 2009-09-15 2011-03-31 Toppan Printing Co Ltd 蒸着材料

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011027656A1 (fr) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Transistor et dispositif d'affichage
JP5606264B2 (ja) * 2010-10-22 2014-10-15 信越化学工業株式会社 フォトマスクブランク

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166965A (ja) * 1986-12-27 1988-07-11 Koujiyundo Kagaku Kenkyusho:Kk 蒸着用タ−ゲツト
US4978437A (en) * 1984-05-12 1990-12-18 Leybold Aktiengesellschaft Method of applying optical coatings of silicon compounds by cathode sputtering, and a sputtering cathode for the practice of the method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978437A (en) * 1984-05-12 1990-12-18 Leybold Aktiengesellschaft Method of applying optical coatings of silicon compounds by cathode sputtering, and a sputtering cathode for the practice of the method
JPS63166965A (ja) * 1986-12-27 1988-07-11 Koujiyundo Kagaku Kenkyusho:Kk 蒸着用タ−ゲツト

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4648879B2 (ja) * 2005-07-21 2011-03-09 株式会社大阪チタニウムテクノロジーズ リチウム二次電池用負極の製造方法
JP2007053084A (ja) * 2005-07-21 2007-03-01 Sumitomo Titanium Corp リチウム二次電池用負極の製造方法
US7658822B2 (en) 2005-08-11 2010-02-09 Wintek Electro-Optics Corporation SiOx:Si composite articles and methods of making same
US7749406B2 (en) * 2005-08-11 2010-07-06 Stevenson David E SiOx:Si sputtering targets and method of making and using such targets
EP1929063A4 (fr) * 2005-08-11 2008-12-03 Wintek Electro Optics Corp Cibles de pulverisation cathodique de siox:si et leurs procedes d'elaboration et d'utilisation
JP2009504915A (ja) * 2005-08-11 2009-02-05 ウィンテック エレクトロ−オプティックス・コーポレイション ＳｉＯ２：Ｓｉスパッタリングターゲットならびにこのようなターゲットを製造および使用する方法
EP1925003A4 (fr) * 2005-08-11 2009-04-29 Wintek Electro Optics Corp Compositions de materiau composite de siox:si et leurs procedes d'elaboration
TWI386496B (zh) * 2005-08-11 2013-02-21 Wintek Electro Optics Corp ＳｉＯｘ：Ｓｉ濺鍍靶材及製造與使用此等靶材之方法
WO2007022275A2 (fr) 2005-08-11 2007-02-22 Wintek Electro-Optics Corporation Cibles de pulverisation cathodique de siox:si et leurs procedes d'elaboration et d'utilisation
EP1929063A2 (fr) * 2005-08-11 2008-06-11 Wintek Electro-Optics Corporation Cibles de pulverisation cathodique de siox:si et leurs procedes d'elaboration et d'utilisation
US7790060B2 (en) * 2005-08-11 2010-09-07 Wintek Electro Optics Corporation SiOx:Si composite material compositions and methods of making same
EP1925003A2 (fr) * 2005-08-11 2008-05-28 Wintek Electro-Optics Corporation Compositions de materiau composite de siox:si et leurs procedes d'elaboration
JP4666184B2 (ja) * 2008-03-12 2011-04-06 信越化学工業株式会社 フィルム蒸着用酸化珪素焼結体の製造方法、及び酸化珪素蒸着フィルムの製造方法
US7998263B2 (en) * 2008-03-12 2011-08-16 Shin-Etsu Chemical Co., Ltd. Sintered silicon oxide for film vapor deposition, its production method, and method for producing silicon oxide vapor deposition film
US8066806B2 (en) 2008-03-12 2011-11-29 Shin-Etsu Chemical Co., Ltd. Sintered silicon oxide for film vapor deposition, its production method, and method for producing silicon oxide vapor deposition film
JP2009215125A (ja) * 2008-03-12 2009-09-24 Shin Etsu Chem Co Ltd フィルム蒸着用酸化珪素焼結体、その製造方法、及び酸化珪素蒸着フィルムの製造方法
JP2011063826A (ja) * 2009-09-15 2011-03-31 Toppan Printing Co Ltd 蒸着材料

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AU2003220872A1 (en) 2003-10-13
TW200304954A (en) 2003-10-16
JPWO2003082769A1 (ja) 2005-08-04
TWI276696B (en) 2007-03-21
JP4235114B2 (ja) 2009-03-11

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