WO2018139492A1 - Milieu de traitement, composition de traitement et procédé de traitement - Google Patents

Milieu de traitement, composition de traitement et procédé de traitement Download PDF

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Publication number
WO2018139492A1
WO2018139492A1 PCT/JP2018/002150 JP2018002150W WO2018139492A1 WO 2018139492 A1 WO2018139492 A1 WO 2018139492A1 JP 2018002150 W JP2018002150 W JP 2018002150W WO 2018139492 A1 WO2018139492 A1 WO 2018139492A1
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Prior art keywords
acid
processing
processing medium
less
carboxylic acid
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PCT/JP2018/002150
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English (en)
Japanese (ja)
Inventor
慎也 ▲高▼梨
圭佑 ▲会▼田
桂 ▲高▼橋
Original Assignee
パレス化学株式会社
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Application filed by パレス化学株式会社 filed Critical パレス化学株式会社
Priority to KR1020197023178A priority Critical patent/KR20190112278A/ko
Priority to CN201880008771.1A priority patent/CN110382655B/zh
Priority to JP2018564602A priority patent/JP6661175B2/ja
Publication of WO2018139492A1 publication Critical patent/WO2018139492A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M173/00—Lubricating compositions containing more than 10% water
    • C10M173/02—Lubricating compositions containing more than 10% water not containing mineral or fatty oils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M129/00—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing oxygen
    • C10M129/02—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing oxygen having a carbon chain of less than 30 atoms
    • C10M129/26—Carboxylic acids; Salts thereof
    • C10M129/28—Carboxylic acids; Salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms
    • C10M129/30—Carboxylic acids; Salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having 7 or less carbon atoms
    • C10M129/32—Carboxylic acids; Salts thereof having carboxyl groups bound to acyclic or cycloaliphatic carbon atoms having 7 or less carbon atoms monocarboxylic
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M129/00—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing oxygen
    • C10M129/02—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing oxygen having a carbon chain of less than 30 atoms
    • C10M129/26—Carboxylic acids; Salts thereof
    • C10M129/48—Carboxylic acids; Salts thereof having carboxyl groups bound to a carbon atom of a six-membered aromatic ring
    • C10M129/52—Carboxylic acids; Salts thereof having carboxyl groups bound to a carbon atom of a six-membered aromatic ring polycarboxylic
    • C—CHEMISTRY; METALLURGY
    • C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
    • C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
    • C10M133/00—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen
    • C10M133/02—Lubricating compositions characterised by the additive being an organic non-macromolecular compound containing nitrogen having a carbon chain of less than 30 atoms
    • C10M133/04—Amines, e.g. polyalkylene polyamines; Quaternary amines
    • C10M133/06—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms
    • C10M133/08—Amines, e.g. polyalkylene polyamines; Quaternary amines having amino groups bound to acyclic or cycloaliphatic carbon atoms containing hydroxy groups

Definitions

  • the present invention relates to a processing medium, a processing composition, and a processing method.
  • a working medium working fluid, cutting fluid, coolant
  • the processing medium is used after being diluted with a solvent such as water, or further blended with abrasive grains and used as a processing composition (grinding liquid, polishing liquid, slurry).
  • the processing medium includes a cooling action that cools the heat generated between the tool and the workpiece, a lubrication action that lubricates the tool and the work piece, and particles (chips, grinding debris, polishing generated during machining) There is a welding protection action that protects the welding between the scrap) and the tool or workpiece.
  • Particle-derived metal oxide particulate sludge generated by processing is likely to adhere (adhere, reattach) to the surface of the workpiece.
  • the sludge adheres to the surface of the workpiece it leads to metal contamination of the workpiece.
  • metal ions eluted into the processing medium due to contact with metal such as tools and pipes are likely to be adsorbed (or penetrated or diffused) on the surface of the workpiece.
  • Metal ions are easy to move on the surface of the workpiece. Due to the movement of metal ions, problems such as malfunction of elements such as transistors formed on the workpiece (for example, wafer), leakage current (leakage current), etc. May occur. Therefore, various processing media and processing compositions have been proposed in order to suppress the adverse effects of sludge and metal ions on the workpiece.
  • Patent Document 1 discloses a water-soluble cutting oil material containing a primary alkanolamine, a carboxylic acid, and a diamine as a component that suppresses a decrease in rust prevention properties.
  • Patent Document 2 discloses a water-soluble metal anticorrosive agent comprising a tetrazole compound and a water-soluble salt thereof as having excellent rust prevention ability for various metals.
  • Patent Document 3 discloses a polishing composition containing a chelating agent, an alkali compound, silicon dioxide and water as an effective suppression of contamination of the wafer by metal impurities.
  • Patent Document 4 discloses a polishing composition containing silica, a basic substance, aminopolyphosphonic acid, and water as an element that effectively prevents metal contamination such as nickel, chromium, iron, and copper.
  • Patent Document 5 discloses a polishing composition containing silica, a basic substance, an amino acid derivative, a salt thereof, and water as one that can prevent metal contamination, particularly copper contamination.
  • Patent Document 6 discloses a polishing composition containing silica, a basic substance, a polyaminopolycarboxylic acid compound having a hydroxyl group, and water as those capable of preventing metal contamination, particularly copper contamination.
  • Patent Document 7 discloses a polishing composition containing silicon dioxide, an alkali compound, and a chelating agent having a phosphonic acid group as one that effectively suppresses contamination of the wafer by metal impurities.
  • Patent Document 8 discloses a polishing slurry containing monoclinic zirconium, a carboxylic acid, and a quaternary alkylammonium hydroxide as one that can effectively prevent copper contamination.
  • the main object of the present invention is to provide a processing medium, a processing composition, and a processing method having both rust prevention performance and metal contamination prevention performance.
  • the processing medium according to the present invention contains a polyvalent carboxylic acid having 2 to 7 carbon atoms, an aromatic monocarboxylic acid, and a basic substance in a neutralized state.
  • the processing composition according to the present invention includes the processing medium and abrasive grains.
  • the processing method according to the present invention processes the workpiece by supplying the processing medium or the processing composition to a contact portion between a tool and the workpiece.
  • the processing medium includes processing for cutting a workpiece such as silicon, silicon carbide, sapphire, and gallium nitride ingots, processing for polishing a cutting surface of a workpiece such as a wafer, and polishing the cutting surface to a mirror surface.
  • processing such as machining, tools (for example, wire saws, band saws, inner peripheral blades, lapping surface plates (for example, single-side surface plates, double-side surface plates, cast iron surface plates, copper surface plates, etc.))
  • Medium working fluid, cutting fluid, coolant, etc.
  • the processing medium can be used after being diluted with water.
  • the processing medium may further contain abrasive grains (for example, diamond, zirconia, alumina, silicon carbide, cubic boron nitride, etc.) and a processing composition (for example, grinding liquid, grinding composition, polishing liquid, polishing composition) , Slurry, suspension, etc.).
  • abrasive grains for example, diamond, zirconia, alumina, silicon carbide, cubic boron nitride, etc.
  • a processing composition for example, grinding liquid, grinding composition, polishing liquid, polishing composition
  • Slurry, suspension etc.
  • the processing medium is used in processing apparatuses such as a cutting apparatus (slicing apparatus, cutter machine), a grinding apparatus (lapping apparatus), and a polishing apparatus (polishing apparatus).
  • copper is often used for piping from the tank of the processing medium to the supply unit.
  • the processing medium preferably has a copper ion concentration in the processing medium of 70 ppm or less, more preferably 60 ppm or less, and particularly preferably 50 ppm or less when copper is immersed in the processing medium. If it exceeds 70 ppm, malfunctions of elements such as transistors formed on the workpiece, leakage current, etc. are likely to occur.
  • the processing medium contains a polyvalent carboxylic acid, an aromatic monocarboxylic acid, a basic substance, and water in a neutralized or neutralized state.
  • the contained or neutralized state means that the acid and base are not neutralized, the acid and base are in an ionic state, or the acid and base are neutralized or in any state.
  • the polyvalent carboxylic acid is a polyvalent carboxylic acid having 2 to 7 carbon atoms.
  • the polyvalent carboxylic acid mainly acts to suppress metal contamination of the workpiece.
  • Examples of the polyvalent carboxylic acid include dicarboxylic acids such as oxalic acid, malonic acid, succinic acid, fumaric acid, glutaric acid, adipic acid, and pimelic acid; tricarboxylic acids such as annicotic acid; hydroxy acids such as malic acid and citric acid; Oxaloacetic acid or the like can be used.
  • the carbon number of the polyvalent carboxylic acid is preferably 2 or more and 6 or less. If the carbon number is greater than 7, it becomes impossible to suppress metal contamination of the workpiece.
  • oxalic acid is excellent in the effect of preventing elution of iron generally used for tools.
  • citric acid is excellent in the effect which prevents elution of copper.
  • An aromatic monocarboxylic acid is a compound having at least one aromatic ring and one carboxyl group.
  • the aromatic monocarboxylic acid for example, p-tert-butylbenzoic acid, 4.000-tert-butylbenzoic acid, m-tert-butylbenzoic acid, nitrobenzoic acid, phenylacetic acid, naphthalenecarboxylic acid and the like can be used.
  • p-tert-butylbenzoic acid is preferable because it has an action of suppressing oxidation of a metal material mainly used in tools (ensuring rust prevention).
  • the total blending amount of the polyvalent carboxylic acid and the aromatic monocarboxylic acid is preferably 0.05 wt% or more and 15 wt% or less, more preferably 0.1 wt% or more and 4 wt% or less in the processing medium, More preferably, it is 0.2 wt% or more and 2 wt% or less. If the concentration is lower than 0.05 wt%, it is difficult to suppress metal contamination of the workpiece. On the other hand, if the concentration is higher than 15 wt%, more base is required to neutralize this. Is easier to elute.
  • the blending ratio of the polyvalent carboxylic acid and the aromatic monocarboxylic acid is preferably 1: 4 or more and less than 2: 1, more preferably 1: 1.8 or more and 1.8: 1 or less, further preferably Is 1: 1.5 or more and 1.5: 1 or less.
  • the ratio is less than 1: 4, the copper ion elution amount increases.
  • the ratio is 2: 1 or more, the copper ion elution amount increases.
  • the basic substance is at least one of a sodium compound, a potassium compound, an ammonium compound, and an amine compound.
  • the basic substance preferably contains a sodium compound or potassium compound and an amine compound, and more preferably contains a plurality of types of amine compounds.
  • a compound whose aqueous solution is basic can be used, for example, sodium compounds such as sodium hydroxide and sodium carbonate; potassium compounds such as potassium hydroxide and potassium carbonate; Ammonium compounds such as tetramethylammonium hydroxide and ammonium hydroxide; methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, monoethanolamine, N-ethanolamine, diethanolamine, triethylamine, triethanolamine, monoisopropanolamine, diisopropylethylamine, Diisopropanolamine, diethylenetriamine, triethylenetetramine, poly (propylene glycol) diamine, trimethylolpropane poly (oxy) (Propylene) triamine, ethylenediamine, tetramethylethylenediamine, 2-amino-2-methylpropanol, laurylaminopropylamine, ethylaminoethy
  • the processing medium according to the present invention contains a basic substance, the aromatic monocarboxylic acid becomes soluble in water, so that a uniform and stable solution can be obtained.
  • the blending amount of the basic substance in the processing medium is preferably 0.1 wt% or more and 20 wt% or less, more preferably 0.2 wt% or more and 10 wt% or less, and further preferably 0.5 wt% or more and 5 wt% or less. If the concentration is lower than 0.1 wt%, the metal contamination of the workpiece will be adversely affected. If the basic substance is insufficient and the pH is 7 or less, the rust prevention property is lost. On the other hand, when the concentration is higher than 20 wt%, copper ions are likely to be eluted.
  • the basic substance is preferably added in an amount that can neutralize both the polyvalent carboxylic acid and the aromatic monocarboxylic acid, and is preferably blended so that the pH of the processing medium is higher than 7, more preferably 8 and 12. .5 or less, more preferably 8.5 or more and 10 or less. Considering the handling and cost of the processing medium, the pH is preferably 12.5 or less.
  • Water is a dilute medium of polyvalent carboxylic acid, aromatic monocarboxylic acid and basic substance that are the concentrate components.
  • the amount of water is not particularly limited as long as the stock solution can be diluted to an arbitrary concentration with water. However, in consideration of handling and cost, it is preferably 50 wt% or more and 99.7 wt% or less, more preferably 80 wt%. The amount is 99.5 wt% or less, more preferably 90 wt% or more and 98 wt% or less.
  • surfactants such as surfactants, antifoaming agents, preservatives, fragrances, dyes, and the like can be added to the processing medium as necessary.
  • the surfactant can be blended in consideration of the dispersibility of the abrasive grains and the permeability of the liquid.
  • the surfactant nonionic surfactants, cationic surfactants, anionic surfactants, amphoteric surfactants and the like can be used.
  • ester type nonionic surfactants such as glyceryl laurate and glyceryl monostearate Surfactants
  • ether type nonionic surfactants such as polyalkylene glycol monobutyl ether and polyoxyethylene alkyl ether
  • ester ether type nonionic surfactants such as polyoxyethylene sorbitan fatty acid ester and polyoxyethylene hexitan fatty acid ester
  • Alkanolamide type nonionic surfactants such as lauric acid diethanolamide and oleic acid diethanolamide
  • alkyl glucoside type nonionic surfactants such as octylglucoside and decylglucoside
  • cetanol, stearylamide Higher alcohol type nonionic surfactants such as coal
  • quaternary ammonium salt type cationic surfactants such as tetramethylammonium chloride and tetramethylammonium hydroxide
  • alkylamine salts such as monomethylamine hydroch
  • the blending amount of the surfactant can be 0.01 wt% or more and 5 wt% or less with respect to 100 wt% of the processing medium, preferably 0.02 wt% or more and 3 wt% or less, more preferably 0.05 wt%. Above and below 1 wt%.
  • the antifoaming agent can be blended in consideration of overflow from the processing medium tank and handling during recycling.
  • antifoaming agents include silicone oils, modified silicones, nonionic surfactants having an HLB (Hydrophilic-Lipophilic Balance) of 7 or more; organic polar compounds such as 2-ethylhexanol and diisooctyl ether; sorbitan esters, pluronics
  • HLB Hydrophilic-Lipophilic Balance
  • a low hydrophilic surfactant such as L-61
  • mineral oil to which a fatty acid metal salt is added can be used.
  • the blending amount of the antifoaming agent can be 0.001 wt% or more and 1 wt% or less with respect to 100 wt% of the processing medium, preferably 0.002 wt% or more and 0.5 wt% or less. It is 005 wt% or more and 0.1 wt% or less.
  • preservatives for example, 2-methyl-4-isothiazolin-3-one, 5-chloro-2-methyl-4-isothiazolin-3-one, p-hydroxybenzoates, phenoxyethanol and the like can be used.
  • fragrance for example, natural fragrance such as mastic oil, parsley oil, anise oil, synthetic fragrance such as carvone, anethole, methyl salicylate, blended fragrance, and the like can be used.
  • the dye examples include direct dyes such as Atlas Red R, Azo Blue, and Azo Mauve AM, basic dyes such as Auramin G, Auramin II, and Bismarck Brown; basic Janus dyes such as Janus Blue G, Janus Green B, and Janus Blue R; Mordant dyes such as logwood, fstic, mudder and alizarin; vat dyes such as anthraquinone and indigoid can be used.
  • direct dyes such as Atlas Red R, Azo Blue, and Azo Mauve AM
  • basic dyes such as Auramin G, Auramin II, and Bismarck Brown
  • basic Janus dyes such as Janus Blue G, Janus Green B, and Janus Blue R
  • Mordant dyes such as logwood, fstic, mudder and alizarin
  • vat dyes such as anthraquinone and indigoid can be used.
  • the salt of the state in which the polyhydric carboxylic acid, aromatic monocarboxylic acid, and basic substance were neutralized instead of those mixtures is a raw material Can be used as
  • a processing medium that becomes a neutralized salt aqueous solution can be obtained by dissolving a basic substance in water, adding a polyvalent carboxylic acid and an aromatic monocarboxylic acid, and stirring the mixture. . If necessary, surfactants, preservatives, antifoaming agents, fragrances, dyes and the like can be added to the processing medium, and water can be added to adjust the concentration.
  • abrasive grains can optionally be blended in the processing medium and stirred.
  • the manufacturing method of a processing medium and a processing composition is not restricted above. The processing medium or processing composition thus obtained is poured into a tank of the processing apparatus, and the processing medium or processing composition is supplied to the contact portion between the tool of the processing apparatus and the workpiece, and the processing target is processed. Things will be processed.
  • adsorption (or penetration, diffusion) of metal ions dissolved in the processing medium by the polyvalent carboxylic acid can be prevented (suppressed), so that metal contamination of the workpiece can be prevented. It can be prevented (suppressed).
  • the aromatic monocarboxylic acid can prevent (suppress) oxidation of the metal material used in the tool, and thus prevent (suppress) adhesion of sludge to the workpiece. be able to.
  • the combination of polyvalent carboxylic acid, aromatic monocarboxylic acid, and basic substance can prevent (suppress) the ionization of copper used for tools, tools for processing devices, and the like. Therefore, copper contamination of the workpiece can be prevented (suppressed).
  • processing media (samples) according to Example 1-24 and Comparative Example 1-11 were prepared with the compositional composition shown in Table 1 to Table 7.
  • a basic substance is dissolved in water, and a polyvalent carboxylic acid and p-tert-butylbenzoic acid as an aromatic monocarboxylic acid are added and stirred.
  • a surfactant A processing medium was obtained by adding 3-benzotriazole and adjusting the concentration by adding water.
  • preservatives, antifoaming agents, fragrances, dyes and the like are not included.
  • P-tert-Butylbenzoic acid 4-tert-Butylbenzoic acid (PTBBA), Fuso Chemical Industry Co., Ltd. -Sodium hydroxide: Caustic soda (solid type), Tsurumi Soda Co., Ltd. Monoisopropanolamine: Monoisopropanolamine (MIPA), NANJING HBL ALKYLOL AMINES CO. , LTD. ⁇ Diisopropanolamine: Diisopropanolamine 85% GT grade, Dow Chemical Japan Co., Ltd. Triethanolamine: TEA (triethanolamine) 99, Japan Chemtech Co., Ltd.
  • Trimethylolpropane poly (oxypropylene) triamine JEFFAMINE (registered trademark) T-403, Huntsman Japan K.K.
  • Polyalkylene glycol monobutyl ether Unilube (registered trademark) 50MB-5, NOF Corporation • 1,2,3-benzotriazole: Sunlite 123.
  • a processing composition (slurry) was obtained by adding 30 wt% of abrasive grains (alumina base wrapping material: FO # 1000, Fujimi Incorporated) to 100 wt% of the processing media according to the examples and comparative examples.
  • abrasive grains alumina base wrapping material: FO # 1000, Fujimi Incorporated
  • polishing method The processing composition according to the example and the comparative example was supplied to the contact portion between the cast iron surface plate (tool) and the silicon wafer (workpiece) to polish the silicon wafer.
  • the polishing process conditions are as follows.
  • Polishing machine Lab Tester GP1 (Malto Corporation)
  • Surface plate Cast iron diameter 250mm
  • Surface plate groove shape Lattice (grid 1 side 25mm x 25mm)
  • Surface plate rotation speed 100 rpm
  • Surface pressure on the test piece 0.6 g / mm 2
  • Test piece Single crystal silicon wafer diameter 125mm Processing composition supply: 1 L / min
  • PH measurement The pH was measured using a pH measuring device (manufactured by HORIBA, Ltd., “Glass electrode type hydrogen ion concentration meter pH METER F-11”, “pH electrode LAQUA (registered trademark) 6377”).
  • 1,2,3-benzotriazole Due to the action of 1,2,3-benzotriazole as an inhibitor, the cast iron surface plate has rust prevention and the amount of copper ion elution can be suppressed, but the metal contamination of the silicon wafer can be suppressed. could not. From this, it was found that 1,2,3-benzotriazole has the antirust property of the cast iron surface plate, but does not have the effect of suppressing the metal contamination of the silicon wafer.
  • Comparative Example 2 containing citric acid (carbon number 6) as the polyvalent carboxylic acid and not containing p-tert-butylbenzoic acid, the action of both the polyvalent carboxylic acid and p-tert-butylbenzoic acid was confirmed. Since it does not exist, the cast iron surface plate has no rust prevention property, and the metal contamination of the silicon wafer and the elution amount of copper ions cannot be suppressed.
  • Comparative Example 4 which does not contain a polyvalent carboxylic acid and contains p-tert-butylbenzoic acid, the cast iron surface plate had rust prevention due to the action of other monocarboxylic acid (caprylic acid). Further, since the presence of the actions of both polyvalent carboxylic acid and p-tert-butylbenzoic acid is lacking, the metal contamination of the silicon wafer and the elution amount of copper ions could not be suppressed.
  • Comparative Example 5 containing sebacic acid (10 carbon atoms) as the polyvalent carboxylic acid and containing p-tert-butylbenzoic acid, the polyvalent carboxylic acid has too many carbon atoms and has 7 or less carbon atoms.
  • the action based on the presence of both polyvalent carboxylic acid and p-tert-butylbenzoic acid is lost, the cast iron surface plate has no rust prevention, and the silicon wafer metal contamination and copper ion elution amount could not be suppressed. .
  • Comparative Example 7 containing citric acid (6 carbon atoms) as the polyvalent carboxylic acid and not containing p-tert-butylbenzoic acid, rust prevention of the cast iron surface plate was effected by the action of monocarboxylic acid (caprylic acid). However, since it lacks the action of both polyvalent carboxylic acid and p-tert-butylbenzoic acid, the metal contamination of the silicon wafer and the elution amount of copper ions could not be suppressed.
  • Comparative Example 8 containing isophthalic acid (carbon number 8) as a polyvalent carboxylic acid and containing p-tert-butylbenzoic acid, the cast iron surface plate has rust prevention and suppresses metal contamination of silicon wafers.
  • isophthalic acid carbon number 8
  • the cast iron surface plate has rust prevention and suppresses metal contamination of silicon wafers.
  • Example 1-9 the cast iron surface plate has the rust prevention property by the action of p-tert-butylbenzoic acid, and the metal contamination of the silicon wafer is suppressed by the action of the polyvalent carboxylic acid having 2 to 7 carbon atoms.
  • the elution amount of copper ions could also be suppressed by the presence of both polyvalent carboxylic acid and p-tert-butylbenzoic acid (see Table 1).
  • Example 6 when the total blending amount of the polyvalent carboxylic acid and p-tert-butylbenzoic acid was reduced, the rust resistance of the cast iron surface plate was reduced.
  • Example 19-21 which is less than 2: 1, the resistance of cast iron surface plate is reduced. It was rusting and could suppress the metal contamination of the silicon wafer and the elution amount of copper ions.
  • Example 13 is in the range of 0.05 wt% or more and 15 wt% or less.
  • the cast iron surface plate had rust prevention, and the metal contamination of the silicon wafer and the elution amount of copper ions could be suppressed.
  • the rust prevention property of the cast iron surface plate decreased, and the metal contamination of the silicon wafer tended to increase.
  • the total amount of polycarboxylic acid (oxalic acid: 2 carbon atoms) and p-tert-butylbenzoic acid is in the range of 0.05 wt% or more and 15 wt% or less.
  • the cast iron surface plate had rust prevention properties, and metal contamination of the silicon wafer could be suppressed.
  • the polyvalent carboxylic acid preferably has 2 or more and 6 or less, 3 or more and 7 or less, more preferably 3 or more and 6 or less carbon atoms.
  • the basic substance is one or more of a sodium compound, a potassium compound, an ammonium compound, and an amine compound.
  • the basic substance includes a sodium compound and an amine compound.
  • the basic substance includes a plurality of types of amine compounds.
  • the processing medium further includes water.
  • the total of the polyvalent carboxylic acid and the aromatic monocarboxylic acid is 0.05 wt% or more and 15 wt% or less, the basic substance is 0.1 wt% or more and 20 wt% or less, and the water is 50 wt%. Above and 99.7 wt% or less.
  • the total blending amount of the polyvalent carboxylic acid and the aromatic monocarboxylic acid is more preferably 0.1 wt% or more and 4 wt% or less, and further preferably 0.2 wt% or more and 2 wt% or less.
  • the blending amount of the basic substance is more preferably 0.2 wt% or more and 10 wt% or less, and further preferably 0.5 wt% or more and 5 wt% or less.
  • the blending amount of water is more preferably 80 wt% or more and 99.5 wt% or less, and further preferably 90 wt% or more and 98 wt% or less.
  • the mixing ratio of the polyvalent carboxylic acid and the aromatic monocarboxylic acid is 1: 4 or more and less than 2: 1.
  • the blending ratio of the polyvalent carboxylic acid and the aromatic monocarboxylic acid is more preferably 1: 1.8 or more and 1.8: 1 or less, and further preferably 1: 1.5 or more and 1.5: 1. It is as follows.
  • the pH of the processing medium is greater than 7.
  • the pH is more preferably 8 or more and 12.5 or less, and still more preferably 8 or more and 10 or less.
  • the processing medium contains at least one of a surfactant, an antifoaming agent, a preservative, a fragrance, and a dye.
  • a surfactant is blended in an amount of 0.01 wt% to 5 wt% with respect to 100 wt% of the processing medium according to any one of claims 5 to 7.
  • the blending amount of the surfactant is preferably 0.02 wt% or more and 3 wt% or less, more preferably 0.05 wt% or more and 1 wt% or less.
  • an antifoaming agent is blended in an amount of 0.001 wt% or more and 1 wt% or less with respect to 100 wt% of the processing medium according to claim 5.
  • the blending amount of the antifoaming agent is preferably 0.002 wt% or more and 0.5 wt% or less, more preferably 0.005 wt% or more and 0.1 wt% or less.
  • the processing medium does not contain benzotriazole.
  • the copper ion in the processing medium is 70 ppm or less when copper is immersed in the processing medium.
  • the copper ion in the processing medium is preferably 60 ppm or less, more preferably 50 ppm or less.
  • the form of the processing composition is possible.
  • the silicon wafer when the silicon wafer is polished by supplying the processing composition to a contact portion between a cast iron surface plate and a silicon wafer, there is no metal contamination on the silicon wafer surface, or the silicon Metal contaminants on the wafer surface can be wiped off before drying.
  • the cast iron platen obtained by polishing a silicon wafer using the processing composition is immersed in the processing composition for 10 minutes at 30 ° C., the cast iron platen There is no generation of rust on the surface, or the generation of rust is 10 or less in an area of 70 mm ⁇ 50 mm.

Abstract

L'invention concerne un milieu de traitement qui combine une performance antirouille avec une performance de prévention de contamination métallique, une composition de traitement, et un procédé de traitement. Le milieu de traitement selon la présente invention contient un acide polycarboxylique C2-7, un acide monocarboxylique aromatique, et une substance basique ou bien contient ces ingrédients dans un état neutralisé.
PCT/JP2018/002150 2017-01-27 2018-01-24 Milieu de traitement, composition de traitement et procédé de traitement WO2018139492A1 (fr)

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KR1020197023178A KR20190112278A (ko) 2017-01-27 2018-01-24 가공 매체, 가공 조성물 및 가공 방법
CN201880008771.1A CN110382655B (zh) 2017-01-27 2018-01-24 加工介质、加工组合物及加工方法
JP2018564602A JP6661175B2 (ja) 2017-01-27 2018-01-24 加工媒体、加工組成物及び加工方法

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JPS4997393A (fr) * 1973-01-22 1974-09-13
JPH1022241A (ja) * 1996-07-08 1998-01-23 Tokyo Fine Chem Kk シリコンウェハ用ラップ液およびラップ剤
JP2005285944A (ja) * 2004-03-29 2005-10-13 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US20140011362A1 (en) * 2012-07-06 2014-01-09 Basf Se Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
CN103555410A (zh) * 2013-11-21 2014-02-05 李荣福 一种汽车连杆用水基防锈磨削冷却液及其制备方法和用途

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JPS5216227B2 (fr) 1973-05-15 1977-05-07
JPH0676590B2 (ja) 1987-08-12 1994-09-28 ユシロ化学工業株式会社 水溶性切削油剤
JP2902281B2 (ja) 1993-11-24 1999-06-07 千代田ケミカル株式会社 水溶性金属防食剤
JP4912592B2 (ja) 2002-11-08 2012-04-11 株式会社フジミインコーポレーテッド 研磨用組成物及びその使用方法
JP2005347737A (ja) 2004-05-07 2005-12-15 Nissan Chem Ind Ltd シリコンウェハー用研磨組成物
TW200619368A (en) 2004-10-28 2006-06-16 Nissan Chemical Ind Ltd Polishing composition for silicon wafer
JPWO2006126432A1 (ja) 2005-05-27 2008-12-25 日産化学工業株式会社 シリコンウェハー用研磨組成物
JP5317436B2 (ja) * 2007-06-26 2013-10-16 富士フイルム株式会社 金属用研磨液及びそれを用いた研磨方法

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JPS4997393A (fr) * 1973-01-22 1974-09-13
JPH1022241A (ja) * 1996-07-08 1998-01-23 Tokyo Fine Chem Kk シリコンウェハ用ラップ液およびラップ剤
JP2005285944A (ja) * 2004-03-29 2005-10-13 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
US20140011362A1 (en) * 2012-07-06 2014-01-09 Basf Se Chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
CN103555410A (zh) * 2013-11-21 2014-02-05 李荣福 一种汽车连杆用水基防锈磨削冷却液及其制备方法和用途

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KR20190112278A (ko) 2019-10-04
JPWO2018139492A1 (ja) 2019-11-21
CN110382655B (zh) 2021-05-11
TWI757413B (zh) 2022-03-11
CN110382655A (zh) 2019-10-25
TW201833291A (zh) 2018-09-16

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