WO2018122989A1 - Composition de type solution de placage d'or de substitution sans cyanure - Google Patents

Composition de type solution de placage d'or de substitution sans cyanure Download PDF

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Publication number
WO2018122989A1
WO2018122989A1 PCT/JP2016/089007 JP2016089007W WO2018122989A1 WO 2018122989 A1 WO2018122989 A1 WO 2018122989A1 JP 2016089007 W JP2016089007 W JP 2016089007W WO 2018122989 A1 WO2018122989 A1 WO 2018122989A1
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Prior art keywords
gold
alkali metal
compound
plating solution
gold plating
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PCT/JP2016/089007
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English (en)
Japanese (ja)
Inventor
貴大 津田
智明 徳久
拓央 大和田
一敬 千田
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関東化學株式会社
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Application filed by 関東化學株式会社 filed Critical 関東化學株式会社
Priority to CN201680091924.4A priority Critical patent/CN110114507A/zh
Priority to JP2018558587A priority patent/JP6842475B2/ja
Priority to US16/473,764 priority patent/US20210095378A1/en
Priority to PCT/JP2016/089007 priority patent/WO2018122989A1/fr
Priority to KR1020197021607A priority patent/KR20190096420A/ko
Priority to EP16925513.0A priority patent/EP3564407A4/fr
Publication of WO2018122989A1 publication Critical patent/WO2018122989A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C23C18/44—Coating with noble metals using reducing agents

Definitions

  • the present invention relates to a gold deposition accelerator used for forming a gold plating film on an electronic industrial component such as a printed wiring board, an electroless gold plating solution containing the gold deposition accelerator, and the electroless gold plating solution.
  • the present invention relates to the plating method used and the gold deposition promoting method.
  • the printed circuit board has a metal circuit pattern on the substrate and / or inside the substrate.
  • the circuit uses a metal having a low electrical resistance such as copper, and is further provided with a barrier metal layer for preventing oxidation of the circuit, corrosion and / or migration with gold.
  • the metal used as the barrier metal layer palladium, platinum, silver, cobalt, and alloys thereof can be used in addition to nickel and nickel alloys.
  • the gold film is generally used for preventing corrosion of the circuit and / or as a contact, a highly porous film is used. It is not preferable and a surface with few gaps is required.
  • Known gold plating methods include electrolytic gold plating, autocatalytic electroless gold plating, base catalyst (surface catalyst) gold plating, displacement gold plating, and the like.
  • Autocatalytic electrolytic gold plating performs gold deposition with a reducing agent using gold as a catalyst.
  • gold is deposited by a reducing agent using the base metal as a catalyst.
  • gold is deposited by an electrical substitution reaction between the base metal on the surface to be plated and gold ions and / or gold ion complexes.
  • Patent Document 1 describes an electroless plating solution containing two reducing agents using a water-soluble gold salt such as sodium gold sulfite in place of a cyanide, and is generally used as a complexing agent, ethylenediaminetetraacetic acid (EDTA). ) And oxocarboxylic acids such as tartaric acid are being investigated as reaction accelerators.
  • a water-soluble gold salt such as sodium gold sulfite in place of a cyanide
  • EDTA ethylenediaminetetraacetic acid
  • oxocarboxylic acids such as tartaric acid are being investigated as reaction accelerators.
  • Patent Document 2 describes an electroless plating solution that also uses sodium gold sulfite as a gold source, and is considering using potassium sulfite to improve the gold deposition rate.
  • concentration of potassium sulfite is too high. It is described that the concentration of potassium sulfite is limited to 500 mg / L or less because the plating solution becomes unstable and causes autolysis.
  • Patent Document 3 a compound that releases a halogen ion having a strong action of accelerating the anode reaction is studied as a gold deposition accelerator for an electroless gold plating solution.
  • Patent Document 4 a heavy metal such as thallium salt is used as a gold deposition accelerator.
  • JP 2003-221474 A Japanese Patent No. 4758470 JP 2010-209415 A JP 2007-308796 A
  • the conventional method using a complexing agent such as oxocarboxylic acids or potassium sulfite as a reaction accelerator is expected to promote the precipitation of gold by interfacial complex formation in which complex ions coordinate to metal ions.
  • a complexing agent such as oxocarboxylic acids or potassium sulfite
  • control of the amount added is necessary because erosion of the substrate becomes a problem, or the plating solution becomes unstable due to decomposition of the complexing agent itself and induces self-decomposition of the plating solution.
  • a reducing agent and a stabilizer it is necessary to consider the interaction with these components, and it is difficult to obtain a desired gold deposition rate only with the complexing agent.
  • alkali metal ions have an effect on the rate of gold deposition while investigating a method for promoting gold deposition without depending on a complexing agent. It came to complete.
  • a gold deposition accelerator for electroless gold plating comprising one or more alkali metal compounds, wherein the alkali metal compound is not a compound containing only sodium as an alkali metal, and The gold deposition accelerator, wherein the alkali metal compound is not only alkali metal halide, potassium sulfite alone, or potassium sodium tartrate.
  • An electroless gold plating solution comprising the gold precipitation accelerator according to [1], a water-soluble gold source, and a complexing agent.
  • the electroless gold plating solution according to [2] wherein the concentration of the alkali metal compound is 0.001 to 5 M in terms of alkali metal ions other than sodium.
  • An electroless gold plating solution comprising the gold precipitation accelerator according to [4], a water-soluble gold source, and a complexing agent.
  • a method of forming a gold plating film wherein the electroless gold plating solution according to [2], [3], [5], [6], [7] or [8] Said method comprising applying to a surface.
  • a method for promoting gold deposition in electroless gold plating comprising adding one or more alkali metal compounds to an electroless gold plating solution, wherein the alkali metal compound is used as an alkali metal. The method, wherein the compound is not a compound containing only sodium, and the alkali metal compound is not only an alkali metal halide, only potassium sulfite, or potassium sodium tartrate.
  • the gold deposition rate of the electroless gold plating solution can be easily improved, a sufficient gold deposition rate is achieved even in an electroless gold plating solution with a slow deposition rate that does not use a cyanide as a gold source. can do.
  • the gold deposition rate can be adjusted only by adjusting the concentration of alkali metal ions other than sodium, adjustment with multiple components is possible compared to the case where gold precipitation is promoted depending only on the complexing agent. Therefore, a more stable electroless gold plating solution can be provided.
  • the deposition rate can be improved without increasing the gold concentration, an inexpensive plating solution can be provided.
  • FIG. 1 is a diagram comparing gold deposition rates when alkali metal ions are changed.
  • the gold deposition accelerator of the present invention contains an alkali metal compound.
  • the gold deposition promoting action of the gold deposition accelerator of the present invention is due to alkali metal ions, and the alkali metal compound contained in the gold deposition accelerator of the present invention is capable of dissociating and generating alkali metal ions. Good.
  • sodium ions do not promote the gold precipitation reaction even with the same alkali metal ions. Therefore, the alkali metal compound contained in the gold deposition accelerator of the present invention is not a compound containing only sodium as an alkali metal, but may contain sodium as long as an alkali metal other than sodium is present. An example of such a compound is potassium sodium tartrate.
  • the alkali metal compound contained in the gold precipitation accelerator of the present invention is preferably one or more selected from the group consisting of a potassium compound, a rubidium compound and a cesium compound, and more preferably from the viewpoint of precipitation promotion. Is a rubidium compound and / or a cesium compound. A potassium compound is also preferable from the viewpoint of cost.
  • the alkali metal compound contained in the gold deposition accelerator of the present invention is not limited to this, but includes the following compounds.
  • the counter ion for the alkali metal ion in the compound is not particularly limited.
  • the counter ion include carbonate ion, nitrate ion, sulfate ion, sulfite ion, phosphate ion, borate ion, halide ion, formate ion, acetate ion, propionate ion, butanoate ion, pentanoate ion, Carboxylic acid ions such as hexanoic acid ion, heptanoic acid ion, octanoic acid ion, glycolic acid ion, lactate ion, malic acid ion, citrate ion, tartaric acid ion, isocitrate ion, hydroxy acid ion such as salicylate ion, benzoic acid ion And aromatic carboxylate ions such as phthalate ions, oxalate ions, malonate
  • alkali metal compound other than the compound having a counter ion examples include, but are not limited to, compounds described below.
  • the gold deposition accelerator of the present invention may be an alkali metal compound itself or a composition containing the compound.
  • the composition can be a mixture of two or more alkali metal compounds.
  • the composition may contain a solvent such as water or an organic solvent in addition to one or more alkali metals.
  • the alkali metal compound contained in the gold deposition accelerator is not only an alkali metal halide, potassium sulfite alone, or potassium sodium tartrate. In one embodiment of the gold deposition accelerator of the present invention, the alkali metal compound contained in the gold deposition accelerator is not limited to sulfite. In one embodiment of the gold deposition accelerator of the present invention, the alkali metal compound contained in the gold deposition accelerator is not only tartrate. In one aspect of the gold precipitation accelerator of the present invention, when the gold precipitation accelerator contains only a potassium compound as an alkali metal compound, a potassium compound other than a potassium compound selected from potassium halide, potassium sulfite, and potassium sodium tartrate including.
  • the gold deposition accelerator of the present invention is a plating solution containing the gold deposition accelerator, and the alkali metal compound containing an alkali metal other than sodium has a concentration in terms of alkali metal ions other than sodium of 0.001 M or more, preferably 0. 0.01 M or more, more preferably 0.02 M or more. From the viewpoint of promoting precipitation, the concentration can be adjusted to 0.001M to 5M, more preferably 0.01M to 2M, and particularly preferably 0.02M to 0.5M. Since the concentration dependence of the gold deposition rate is also recognized, the desired gold deposition rate can be adjusted by adjusting the concentration.
  • the gold deposition accelerator of the present invention does not contain potassium sodium tartrate.
  • the concentration of potassium sodium tartrate in the plating solution is 0.11M or more, preferably greater than 0.11M, It is preferable to use it after adjusting so that it may become 0.2M or more. From the viewpoint of promoting precipitation, the concentration is preferably 0.11 M to 5 M, more preferably 0.11 M to 2 M, and particularly preferably 0.11 M to 0.5 M.
  • the gold deposition accelerator of the present invention does not contain potassium sulfite.
  • the gold deposition accelerator of the present invention when it contains potassium sulfite or sulfite, it is preferably used by adjusting the concentration of potassium sulfite in the plating solution to 0.004M or more. . From the viewpoint of promoting precipitation, the concentration is preferably 0.004M to 5M, more preferably 0.01M to 2M, and particularly preferably 0.02M to 0.5M.
  • the present invention also relates to an electroless gold plating solution containing the above-described gold deposition accelerator of the present invention, a water-soluble gold source and a complexing agent.
  • the concentration of the alkali metal compound is preferably 0.001 M or more, more preferably 0.01 M or more, particularly preferably 0 in terms of alkali metal ions other than sodium. 0.02M or more. From the viewpoint of promoting precipitation, the concentration is preferably 0.001M to 5M, more preferably 0.01M to 2M, and particularly preferably 0.02M to 0.5M. Since a certain degree of concentration dependency is recognized in the gold deposition rate, a desired gold deposition rate can be adjusted by adjusting the concentration.
  • the gold source used in the present invention specifically, a water-soluble gold salt such as gold sulfite or chloroaurate can be used. From the viewpoint of safety and waste liquid treatment, it is preferable to use a gold source that does not contain cyan.
  • the concentration of the gold source is preferably from 0.1 to 10 g / L, more preferably from 0.5 to 5 g / L.
  • the concentration range is preferably 0.1 to 10 g / L, more preferably 0.5 to 5 g / L in terms of gold concentration, considering the physical properties of the deposited film. It is.
  • the gold source does not contain an alkali metal other than sodium.
  • the gold deposition accelerator of the present invention contains an alkali metal compound that does not contain gold.
  • the electroless gold plating solution of the present invention when the gold source contains an alkali metal other than sodium, the electroless gold plating solution of the present invention further contains an alkali metal compound not containing gold.
  • the concentration of alkali metal ions other than sodium is preferably 0.001M or more, more preferably 0.01M or more, and particularly preferably 0.02M or more. From the viewpoint of promoting precipitation, the concentration is preferably 0.001M to 5M, more preferably 0.01M to 2M, and particularly preferably 0.02M to 0.5M.
  • concentration of the said alkali metal ion is a density
  • the complexing agent used in the present invention is not particularly limited, and specific examples thereof include compounds capable of forming a complex with monovalent or trivalent gold ions such as sulfites and thiosulfates. It is done.
  • the concentration of the complexing agent is preferably 0.001M to 5M, more preferably 0.01M to 0.5M. When sodium sulfite is used as the complexing agent, for example, the concentration range is 0.001 to 5M is preferable, and 0.01 to 0.5M is more preferable.
  • pH adjuster examples include various acids such as sulfuric acid, hydrochloric acid and phosphoric acid, hydroxide salts such as sodium hydroxide and potassium hydroxide, and limited amines such as NR 4 OH (R: hydrogen or alkyl). Etc. can be used.
  • a phosphate buffer as a pH adjuster, it is preferable to use phosphoric acid and sodium hydroxide or potassium hydroxide.
  • the pH is preferably in the range of 5 to 11 according to the composition, more preferably 6 to 10.
  • the gold deposition accelerator of the present invention can be added to a plating solution for electroless gold plating.
  • the plating solution can be used for self-catalyzed electroless gold plating, base catalyst (surface catalyst) gold plating, displacement gold plating and It can be used for any method of plating in which these are combined. In particular, it is preferably used for displacement gold plating from the viewpoint of deposition acceleration.
  • the plating solution of the present invention may or may not contain a reducing agent.
  • a reducing agent ascorbate such as sodium ascorbate, hydroxylamine or hydroxylamine hydrochloride, hydroxylamine salts such as hydroxylamine sulfate, hydroxylamine derivatives such as hydroxylamine-O-sulfonic acid, hydrazine, dimethylamine
  • examples thereof include amine borane compounds such as borane, borohydride compounds such as sodium borohydride, saccharides such as glucose, hypophosphites and the like.
  • These reducing agents may be used alone or in combination of two or more.
  • any compound can be used as long as it is judged that gold can be reduced and precipitated from gold ions or a gold complex according to the Nernst equation. However, reactivity to other bath components, stability of bath Use in consideration of the above.
  • additives such as a crystal grain shape modifier and a brightener can be used in an appropriate concentration range.
  • Other additives are not particularly limited, and for example, conventionally used additives can be used.
  • crystal grain shape modifiers such as polyethylene glycol, and brighteners such as thallium, copper, antimony, lead and the like.
  • any additive that satisfies the above conditions can be used.
  • the electroless gold plating solution of the present invention does not contain potassium sodium tartrate.
  • the concentration of potassium sodium tartrate or tartrate in the plating solution is 0. 0 in terms of alkali metal ions other than sodium. It is preferable to adjust the concentration to 11M or higher, preferably higher than 0.11M, more preferably 0.2M or higher. From the viewpoint of promoting precipitation, the concentration is preferably 0.01M to 5M, more preferably 0.01M to 2M, and particularly preferably 0.01M to 0.5M.
  • the electroless gold plating solution of the present invention does not contain potassium sulfite.
  • the electroless gold plating solution of the present invention when it contains potassium sulfite, it is preferably used by adjusting the concentration of potassium sulfite in the plating solution to be 0.004M or more. From the viewpoint of promoting precipitation, the concentration is 0.004M to 5M, more preferably 0.01M to 2M, and particularly preferably 0.02M to 0.5M.
  • the electroless gold plating solution of the present invention when the electroless gold plating solution contains only a potassium compound as an alkali metal compound, other than a potassium compound selected from potassium halide, potassium sulfite, and potassium sodium tartrate Contains potassium compounds.
  • the present invention also relates to a gold deposition accelerator containing a rubidium compound and / or a cesium compound. Precipitation of gold is promoted to rubidium ions and cesium ions.
  • the concentration of rubidium ions is preferably 0.001 to 5M, more preferably 0.01 to 2M, and particularly preferably 0.02 to 0.5M.
  • the concentration of cesium ions is preferably 0.001 to 5M, more preferably 0.01 to 2M, and particularly preferably 0.02 to 0.5M.
  • Examples of the rubidium compound and / or cesium compound include the same compounds as those described above as examples of the alkali metal compound.
  • the gold deposition rate of the electroless gold plating solution containing the gold deposition accelerator of the present invention is 0.003 ⁇ m / min or more, preferably 0.004 ⁇ m / min or more on a Ni substrate having a pH of 7, a bath temperature of 80 ° C. and 4 cm 2. More preferably, it may be 0.005 ⁇ m / min or more.
  • the present invention also relates to a method of forming a gold plating film, which includes a step of applying the electroless gold plating solution of the present invention to the surface of an electronic industrial component.
  • the use temperature of the electroless gold plating solution in the above step is preferably 20 to 90 ° C., more preferably 40 to 70 ° C. from the viewpoint of the deposition rate.
  • the pH is preferably 5 to 11 and more preferably 6 to 10 from the viewpoint of the stability of the liquid and the deposition rate.
  • the electronic industrial parts are not particularly limited, but typically include electrodes, wirings and the like.
  • the present invention is also a method for promoting gold deposition in electroless gold plating, comprising adding one or more alkali metal compounds to an electroless gold plating solution, wherein the alkali metal compound is an alkali.
  • the method is not a compound containing only sodium as a metal and the alkali metal compound is not only an alkali metal halide, only potassium sulfite, or potassium sodium tartrate.
  • the concentration of the alkali metal compound is 0.001 to 5 M, preferably 0.01 to 2 M, more preferably 0.02 to 0 in terms of alkali metal ions other than sodium. .5M.
  • the method for promoting gold precipitation of the present invention does not include adding potassium sodium tartrate.
  • the concentration of potassium sodium tartrate in the plating solution is preferably 0.11 M or more in terms of potassium ion, preferably Is preferably adjusted to be larger than 0.11M, more preferably 0.2M or more. From the viewpoint of promoting precipitation, the concentration is preferably 0.11 M to 5 M, more preferably 0.11 M to 2 M, and particularly preferably 0.11 M to 0.5 M.
  • the method for promoting gold deposition of the present invention does not include adding potassium sulfite.
  • the concentration of potassium sulfite in the plating solution is adjusted to 0.004M or more. It is preferable to do. From the viewpoint of promoting precipitation, the concentration is preferably 0.004M to 5M, more preferably 0.01M to 2M, and particularly preferably 0.02M to 0.5M.
  • the present invention also relates to a method of promoting gold deposition in electroless gold plating by adding a rubidium compound and / or a cesium compound.
  • the total concentration of the rubidium compound and / or cesium compound is preferably 0.001M to 5M, more preferably 0.01M to 1M in terms of rubidium ions and / or cesium ions.
  • the preferred concentration is 0.001M to 5M, more preferably 0.01M to 1M in terms of rubidium ions.
  • the cesium compound the preferred concentration is 0.001M to 5M, more preferably 0.001M to 1M in terms of cesium ions.
  • Another aspect of the present invention is a method for promoting gold deposition in electroless gold plating, wherein the concentration of alkali metal ions in the electroless gold plating solution is adjusted to adjust the gold deposition rate.
  • the method The total alkali metal ion concentration in the electroless gold plating solution is adjusted to 0.001M to 5M, preferably 0.01M to 2M, more preferably 0.02M to 0.5M.
  • a gold plating solution is prepared by mixing the gold source, complexing agent and precipitation accelerator shown in Table 1 at the concentrations shown in Table 1, and the pH of the gold plating solution is adjusted to pH 7. using phosphoric acid as a pH adjuster. Adjusted to zero. Using a 4 cm 2 Ni rolled sheet, plating was performed at 80 ° C. for 10 minutes, the film thickness was measured, and the deposition rate was calculated. For the thickness of the gold plating, a fluorescent X-ray film thickness meter “FT-9500X” manufactured by Hitachi was used.
  • FIG. 1 is a comparison of precipitation rates when alkali metal ions are changed based on the results of Comparative Example 1 and Examples 1 to 3 in Table 1. It was found that the gold deposition rate was improved by adding alkali metal ions. Moreover, although Example 1, Example 2, and Example 3 all contained the carbonate ion of the same density
  • An electroless gold plating solution containing a gold deposition accelerator containing at least one alkali metal ion other than sodium ions can be used even if the type of cesium salt, gold source and complexing agent is changed. It was confirmed that the gold deposition rate was higher than that of the electroless gold plating solution not containing.
  • a sufficient gold deposition rate can be realized even in electroless plating using an electroless gold plating solution with a slow deposition rate that does not use a cyanide as a gold source.

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  • Engineering & Computer Science (AREA)
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Abstract

L'invention concerne : un accélérateur de précipitation d'or qui est destiné à être utilisé dans un dépôt autocatalytique d'or, et qui contient au moins un type de composé de métal alcalin, où le composé de métal alcalin est différent des composés qui ne contiennent que du sodium à titre de métal alcalin ou qui ne contiennent qu'un halogénure de métal alcalin, un sulfite de potassium ou un tartrate de sodium et de potassium ; une solution de placage d'or autocatalytique contenant ledit accélérateur de précipitation d'or ; un procédé de placage d'or l'utilisant ; un procédé d'accélération de précipitation d'or ; et autres.
PCT/JP2016/089007 2016-12-27 2016-12-27 Composition de type solution de placage d'or de substitution sans cyanure WO2018122989A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201680091924.4A CN110114507A (zh) 2016-12-27 2016-12-27 无氰置换镀金液组合物
JP2018558587A JP6842475B2 (ja) 2016-12-27 2016-12-27 シアンフリー置換金めっき液組成物
US16/473,764 US20210095378A1 (en) 2016-12-27 2016-12-27 Cyanide-free liquid composition for immersion gold plating
PCT/JP2016/089007 WO2018122989A1 (fr) 2016-12-27 2016-12-27 Composition de type solution de placage d'or de substitution sans cyanure
KR1020197021607A KR20190096420A (ko) 2016-12-27 2016-12-27 무시안화물 치환 금 도금액 조성물
EP16925513.0A EP3564407A4 (fr) 2016-12-27 2016-12-27 Composition de type solution de placage d'or de substitution sans cyanure

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PCT/JP2016/089007 WO2018122989A1 (fr) 2016-12-27 2016-12-27 Composition de type solution de placage d'or de substitution sans cyanure

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WO2018122989A1 true WO2018122989A1 (fr) 2018-07-05

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0734258A (ja) * 1993-07-16 1995-02-03 Okuno Chem Ind Co Ltd 置換型無電解金めっき液
JP2003221674A (ja) 2002-01-30 2003-08-08 Kanto Chem Co Inc 無電解金めっき液
JP2005146410A (ja) * 2003-10-22 2005-06-09 Kanto Chem Co Inc 無電解金めっき液
JP2007308796A (ja) 2006-04-18 2007-11-29 Hitachi Chem Co Ltd 無電解金めっき液及び無電解金めっき方法
JP2008208392A (ja) * 2007-02-23 2008-09-11 Kanto Chem Co Inc 無電解金めっき液およびそれを用いためっき方法
JP2010180467A (ja) * 2009-02-09 2010-08-19 Ne Chemcat Corp 非シアン無電解金めっき液及び導体パターンのめっき方法
JP2010209415A (ja) 2009-03-10 2010-09-24 Kanto Chem Co Inc 金微細構造体形成用無電解金めっき液およびこれを用いた金微細構造体形成方法ならびにこれを用いた金微細構造体
JP4758470B2 (ja) 2008-12-18 2011-08-31 シャープ株式会社 突起電極の形成方法及び置換金めっき液

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6350570A (ja) * 1986-08-12 1988-03-03 ニツカン工業株式会社 金属メツキされたチタン酸アルカリおよびその製造方法
US4985076A (en) * 1989-11-03 1991-01-15 General Electric Company Autocatalytic electroless gold plating composition
US4978559A (en) * 1989-11-03 1990-12-18 General Electric Company Autocatalytic electroless gold plating composition
US5206055A (en) * 1991-09-03 1993-04-27 General Electric Company Method for enhancing the uniform electroless deposition of gold onto a palladium substrate
DE102010012204B4 (de) * 2010-03-19 2019-01-24 MacDermid Enthone Inc. (n.d.Ges.d. Staates Delaware) Verbessertes Verfahren zur Direktmetallisierung von nicht leitenden Substraten
JP2017210630A (ja) * 2014-10-02 2017-11-30 日本板硝子株式会社 無電解めっき下地剤及びその製造方法並びに該無電解めっき下地剤を用いためっき積層体

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0734258A (ja) * 1993-07-16 1995-02-03 Okuno Chem Ind Co Ltd 置換型無電解金めっき液
JP2003221674A (ja) 2002-01-30 2003-08-08 Kanto Chem Co Inc 無電解金めっき液
JP2005146410A (ja) * 2003-10-22 2005-06-09 Kanto Chem Co Inc 無電解金めっき液
JP2007308796A (ja) 2006-04-18 2007-11-29 Hitachi Chem Co Ltd 無電解金めっき液及び無電解金めっき方法
JP2008208392A (ja) * 2007-02-23 2008-09-11 Kanto Chem Co Inc 無電解金めっき液およびそれを用いためっき方法
JP4758470B2 (ja) 2008-12-18 2011-08-31 シャープ株式会社 突起電極の形成方法及び置換金めっき液
JP2010180467A (ja) * 2009-02-09 2010-08-19 Ne Chemcat Corp 非シアン無電解金めっき液及び導体パターンのめっき方法
JP2010209415A (ja) 2009-03-10 2010-09-24 Kanto Chem Co Inc 金微細構造体形成用無電解金めっき液およびこれを用いた金微細構造体形成方法ならびにこれを用いた金微細構造体

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3564407A4 *

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EP3564407A1 (fr) 2019-11-06
US20210095378A1 (en) 2021-04-01
KR20190096420A (ko) 2019-08-19
CN110114507A (zh) 2019-08-09
JPWO2018122989A1 (ja) 2019-12-26
EP3564407A4 (fr) 2020-10-21

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