WO2018095132A1 - Copper crystal particles having highly preferred orientation and preparation method thereof - Google Patents

Copper crystal particles having highly preferred orientation and preparation method thereof Download PDF

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Publication number
WO2018095132A1
WO2018095132A1 PCT/CN2017/103498 CN2017103498W WO2018095132A1 WO 2018095132 A1 WO2018095132 A1 WO 2018095132A1 CN 2017103498 W CN2017103498 W CN 2017103498W WO 2018095132 A1 WO2018095132 A1 WO 2018095132A1
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copper
unsubstituted
substituted
crystal particles
bamboo
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PCT/CN2017/103498
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English (en)
French (fr)
Inventor
Yun Zhang
Jing Wang
Zifang ZHU
Tao MA
Luming CHEN
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Suzhou Shinhao Materials Llc
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Priority to KR1020187009564A priority Critical patent/KR102095497B1/ko
Priority to US15/745,685 priority patent/US10604857B2/en
Priority to TW107109648A priority patent/TWI663296B/zh
Publication of WO2018095132A1 publication Critical patent/WO2018095132A1/en
Priority to US16/803,967 priority patent/US11613824B2/en

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D219/00—Heterocyclic compounds containing acridine or hydrogenated acridine ring systems
    • C07D219/02—Heterocyclic compounds containing acridine or hydrogenated acridine ring systems with only hydrogen, hydrocarbon or substituted hydrocarbon radicals, directly attached to carbon atoms of the ring system
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
    • C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D311/78—Ring systems having three or more relevant rings
    • C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
    • C07D311/82—Xanthenes
    • C07D311/84—Xanthenes with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached in position 9
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
    • C07D335/04—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
    • C07D335/10—Dibenzothiopyrans; Hydrogenated dibenzothiopyrans
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/70—Other properties
    • B32B2307/704—Crystalline
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/12—Copper

Definitions

  • the present invention relates to the field of electroplating, and more particularly to copper crystal particles having a highly preferred orientation and a method of preparing the same by direct current plating.
  • Copper with highly preferred orientation has many excellent properties. Because copper crystal particles have highly preferred orientation, their properties are different in different orientations. For a microscopic point of view, different crystal orientations lead different atomic arrangements and densities, resulting in different thermodynamic and electromagnetic properties. In addition, from the chemical reactivity point of view, different crystal orientations lead to different reaction rate. For example, etching rates in different orientations of the crystal particles can be different. This is extremely beneficial for differential etching. There is no need to protect the copper surface (e.g., dry film protection, tin protection) for selective etching. At the same time, “side erosion” and “pool” effects can also be avoided.
  • dry film protection e.g., dry film protection, tin protection
  • Copper with highly preferred orientation cannot be easily obtained, especially in the field of microelectronics.
  • electroplating a relatively feasible method is electroplating, but this method requires pulse electrodeposition.
  • the equipment requirements for pulse electrodeposition are extremely high.
  • the current density for pulse electrodeposition is relatively low, usually less than 5A /dm 2 , which results in low production efficiency.
  • pulse electrodeposition cannot control the degree of preferred orientation to obtain copper crystal particles with preferred orientation.
  • the present invention provides a method of preparing bamboo-like copper crystal particles having a highly preferred orientation.
  • the method includes providing a substrate; conducting a direct current copper electroplating on the substrate in a copper plating solution at a plating current density of 3 to 30 A /dm 2 ; and depositing the copper crystal particles on the substrate.
  • the copper plating solution includes copper plating additives and a copper plating base solution;
  • the copper base solution includes copper sulfate, sulfuric acid, and a trace amount of hydrochloric acid or sodium chloride, and the copper base solution has a concentration of copper ions of 40-60 g /L, a concentration of sulfate ions of 80-120 g /L, and a concentration of chloride ions of 40-60 ppm;
  • the copper plating additives include an accelerator, a suppressor, and a non-dye leveler, the accelerator has a concentration of 3 to 5 mL /L, the suppressor has a concentration of 5 to 15 mL /L, and the non-dye leveler has a concentration of 25 to 35 mL /L.
  • the non-dye leveler is a quaternary ammonium salt having formula (I) : (I) , in formula (I) , X is Cl - , or Br - ; R 1 is O, S or N; R 2 , R 3 and R 4 are independently selected from the group consisting of hydrogen, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, unsubstituted or substituted C 3-12 cycloalkyl, unsubstituted or substituted C 6-12 aryl, unsubstituted or substituted 3-12 membered heterocyclic, and unsubstituted or substituted 5-12 membered heteroaryl; or R 2 and R 3 may combine with an atom or atoms to which they are attached to form unsubstituted or substituted C 3-12 cycloalkyl, unsubstituted or substituted 3-to 12-membere
  • the non-dye leveler is
  • the accelerator is an organosulfate having formula (II) : (II) , in formula (II) , X is O or S; n is 1 to 6; M is hydrogen, alkali metal, or ammonium; R 1 is an alkylene, cyclic alkylene group of 1 to 8 carbon atoms, or an aromatic hydrocarbon of 6 to 12 carbon atoms; and R 2 is MO 3 SR 1 .
  • the organosulfate is sodium lauryl sulfate, disodium 3, 3-dithiobispropane-sulphonate, or 3, 3’-dithiobispropanesulfonic acid.
  • the suppressor is polyethylene glycol, 2-mercaptoethanol, polypropylene ether, or poly N, N’-diethylsaphranin.
  • the present invention provides an electroplating copper layer.
  • the electroplating copper layer includes bamboo-like copper crystal particles having a highly preferred orientation.
  • the bamboo-like copper crystal particles have a long axis direction and a short axis direction, and the bamboo-like copper crystal particles have a length of 20 nm to 5 ⁇ m in the long axis direction and a length of 20 nm to 2 ⁇ m in the short axis direction.
  • a first plurality of the bamboo-like copper crystal particles have a preferred orientation, and the preferred orientation is a direction perpendicular to a copper substrate on which the electroplating copper layer is deposited.
  • a second plurality of the bamboo-like copper crystal particles have a second orientation, the second orientation and the preferred orientation forms an angle of great than 0° and less than 45°, and the second plurality of the bamboo-like copper crystal particles constitutes 50-90%of all the bamboo-like copper crystal particles.
  • Figure 1 is an XRD (X-ray diffraction) pattern of the copper layer of Example 1 of the present invention.
  • Figure 2 shows cross-sectional microstructure pictures by FIB (focused ion beam) of the copper layer of Example 1 of the present invention.
  • Figure 3 shows a XRD (X-ray diffraction) pattern of the copper layer of Example 2 of the present invention.
  • Figure 4 shows cross-sectional microstructure pictures by FIB (focused ion beam) of the copper layer of Example 2 of the present invention.
  • Figure 5A shows a cross-sectional microstructure (SEM, Mag. X5,000) of the electroplating copper of Example 3 of the present invention.
  • Figure 5B shows a cross-sectional microstructure (FIB) of the electroplating copper of Example 3 of the present invention.
  • Figure 6A shows a cross-sectional microstructure (SEM, Mag. X5,000) of the electroplating copper of Comparative Example 1 of the present invention.
  • Figure 6B shows a cross-sectional microstructure (FIB) of the electroplating copper of Comparative Example 1 of the present invention.
  • the present invention provides a method for preparing copper crystal particles having a highly preferred orientation.
  • the method does not require pulse electrodeposition, and can be used at a high current density.
  • this method uses a direct current electroplating process, and the current density for electroplating is 3-30 A /dm 2 .
  • the method uses a copper plating solution that includes copper plating additives and a copper plating base solution.
  • the copper base solution includes copper sulfate, sulfuric acid, and a trace amount of hydrochloric acid or sodium chloride.
  • the concentration of copper ions in the copper plating base solution is 40-60 g /L, the concentration of sulfate ions is 80-120 g /L, and the concentration of chloride ions is 40-60 ppm.
  • the copper plating additives include an accelerator, a suppressor, and a non-dye leveler.
  • concentration of the accelerator in the copper plating solution is 3 to 5 mL /L
  • concentration of the suppressor is 5 to 15 mL /L
  • concentration of the non-dye leveler is 25 to 35 mL /L.
  • the accelerator is an organosulfate
  • the suppressor is polyethylene glycol
  • the non-dye leveler is a quaternary ammonium salt.
  • the suppressor is polyethylene glycol, 2-mercaptoethanol, polypropylene ether, or poly N, N’-diethylsaphranin.
  • the quaternary ammonium salt has the following formula (I) :
  • X is Cl - , or Br - ;
  • R 1 is O, S or N;
  • R 2 , R 3 and R 4 are independently selected from the group consisting of hydrogen, unsubstituted or substituted alkyl, unsubstituted or substituted alkenyl, unsubstituted or substituted alkynyl, unsubstituted or substituted C 3-12 cycloalkyl, unsubstituted or substituted C 6-12 aryl, unsubstituted or substituted 3-12 membered heterocyclic, and unsubstituted or substituted 5-12 membered heteroaryl; or R 2 and R 3 may combine with an atom or atoms to which they are attached to form unsubstituted or substituted C 3-12 cycloalkyl, unsubstituted or substituted 3-to 12-membered heterocyclic, unsubstituted or substituted C 6-12 aryl, or unsubstituted or substituted 5-to 12-member
  • R 1 in formula (I) is O.
  • Y 1 , Y 2 , Y 3 , Y 4 , Y 5 , Y 6 , Y 7 , and Y 8 in formula (I) are hydrogen.
  • R 2 , R 3 and R 4 in formula (I) are each independently C 1-6 alkyl.
  • R 2 in formula (I) is methyl
  • R 3 and R 4 in formula (I) are isopropyl.
  • R 2 and R 3 in formula (I) are ethyl, and R 4 in formula (I) is benzyl.
  • the organosulfate has formula (II) :
  • X is O or S; n is 1 to 6; M is hydrogen, alkali metal, or ammonium; R 1 is an alkylene, cyclic alkylene group of 1 to 8 carbon atoms, or an aromatic hydrocarbon of 6 to 12 carbon atoms; and R 2 is MO 3 SR 1 .
  • X in formula (II) is S.
  • the organosulfate has formula (III) :
  • n is between 1 and about 200 and m is between 1 and about 200.
  • the organosulfate is sodium lauryl sulfate, disodium 3, 3-dithiobispropane-sulphonate, or 3, 3’-dithiobispropanesulfonic acid.
  • the present invention also provides copper crystal particles having a highly preferred orientation obtained by the above-mentioned method.
  • the copper crystal particles are column-shaped crystal particles having a long axis direction and a short axis direction.
  • the copper crystal particles have a length of 20 nm to 5 ⁇ m in the long axis direction and a length of 20 nm to 2 ⁇ m in the short axis direction.
  • the microstructure of the copper crystal particles indicates that the particles have a highly preferred orientation.
  • the highly preferred orientation is a direction that is perpendicular to the surface of the plating substrate, i.e., a vertical direction.
  • Not all the copper crystal particles have the highly preferred orientation, i.e., a long axis direction that is parallel to this vertical direction.
  • Some particles may have other orientations, that is, the degree of orientation.
  • the degree of orientation depends on two factors. First is an angle formed by the long axis direction of a copper crystal particle and the vertical direction. The angle is from great than 0° and less than 45°. When the angle is 0 °, the long axis direction of a copper crystal particle is parallel to the vertical direction. Second is the percentage of copper crystal particles having an angle from great than 0° and less than 45° in all the copper crystal particles. The percentage is 50 to 90%.
  • the copper crystal particles can have different orientations when subjected to an annealing process.
  • the temperature for the annealing process can be 60 to 300 °C, and the annealing time can be 10 to 300 minutes.
  • the present invention has the following advantages.
  • the present invention uses a copper sulfate-sulfuric acid system as the copper plating base solution and a certain amount of copper plating additives.
  • the preparation method uses a direct current electroplating process and realizes high-speeding plating using regular direct current electroplating equipment.
  • the method also realizes a highly preferred orientation for the copper crystal particles in the in the microstructure of the coating layer and that the degree of orientation can be controlled.
  • the present invention uses a regular direct current electroplating process and reduces the complexity of obtaining copper crystal particles having a highly preferred orientation via a convention method.
  • the present invention does not require complicated pulse rectification equipment in production, and thus significantly reduces the production cost.
  • the optimization of the electroplating process and the annealing condition can realize the control of the preferred orientation and achieve the anisotropy of the coating layer.
  • the addition of copper plating additives increases the capacity for current density in the electroplating process, realizes high speed plating, and significantly improves production efficiency.
  • Copper plating additives were added to a copper plating base solution to obtain a copper plating solution.
  • the copper plating base solution included copper sulfate, sulfuric acid, and a trace amount of hydrochloric acid.
  • the concentrations of an accelerator, a suppressor, and non-dye leveler were 3-5 mL /L, 5-15 mL /L, and 25-35 mL /L, respectively.
  • the concentration of copper ions is 40-60 g /L
  • the concentration of sulfate ions is 80-120 g /L
  • the concentration of chloride ions is 40-60 ppm.
  • the copper plating solution was stirred for 1.5-2.5 hours to mix well.
  • the accelerator is sodium lauryl sulfate, disodium 3, 3-dithiobispropane-sulphonate, or 3, 3’-dithiobispropanesulfonic acid.
  • the non-dye leveler is
  • Substrates were electroplated at three different direct current densities, 5A /dm 2 , 10A /dm 2 and 15A /dm 2 , for 15 min, 7.5 min, and 5 min, respectively, using the copper plating solution prepared above.
  • the inventive electroplating copper is obtained at under high plating speed (i.e., 10 ASD) and has bamboo-like structure and uniform particle size.
  • Copper plating additives were added to a copper plating base solution to obtain a copper plating solution.
  • the copper plating base solution included copper sulfate, sulfuric acid, and a trace amount of sodium chloride.
  • the concentrations of an accelerator, a suppressor, and non-dye leveler were 3-5 mL /L, 5-15 mL /L, and 25-35 mL /L, respectively.
  • the concentration of copper ions is 40-60 g /L
  • the concentration of sulfate ions is 80-120 g /L
  • the concentration of chloride ions is 50 ppm.
  • the copper plating solution was stirred for 1.5-2.5 hours to mix well.
  • Two substrates can be electroplated at 5-15A /dm 2 for 5-15 min using the copper plating solution prepared above.
  • One copper coated substrate were then placed in a nitrogen-protected annealing furnace and annealed at 200-300 °C for 0.5-2 h.
  • the XRD patterns of the copper coated substrates of the annealed substrate and unannealed substrate were measured by X-ray diffractometry and are shown in Figure 3.
  • the inventive electroplating copper is obtained at under high plating speed (i.e., 10 ASD) and has bamboo-like structure and uniform particle size.
  • An inventive electroplating copper was obtained with the same plating conditions described in Examples 1 and 2.
  • a cross-sectional microstructure (SEM, Mag. X5,000) of the inventive electroplating copper is shown in Figure 5A.
  • the inventive electroplating copper has bamboo-like structure.
  • FIG. 6A A cross-sectional microstructure (FIB) of the inventive electroplating copper is shown in Figure 6A.
  • the inventive electroplating copper is obtained at under high plating speed (i.e., 10 ASD) has bamboo-like structure and uniform particle size.
  • a conventional electroplating copper was obtained with the following BKM plating conditions:
  • FIG. 5B A cross-sectional microstructure (SEM, Mag. X5,000) of the conventional electroplating copper is shown in Figure 5B. As shown in Figure 5B, the conventional electroplating copper is non-oriented.
  • FIG. 6B A cross-sectional microstructure (FIB) of the inventive electroplating copper is shown in Figure 6B.
  • the conventional electroplating copper is non-oriented and has a large size distribution.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Electroplating And Plating Baths Therefor (AREA)
PCT/CN2017/103498 2016-11-23 2017-09-26 Copper crystal particles having highly preferred orientation and preparation method thereof WO2018095132A1 (en)

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Application Number Priority Date Filing Date Title
KR1020187009564A KR102095497B1 (ko) 2016-11-23 2017-09-26 높은 우선 배향을 갖는 구리 결정 입자 및 그의 제조 방법
US15/745,685 US10604857B2 (en) 2016-11-23 2017-09-26 Copper crystal particles having a highly preferred orientation and a preparation method thereof
TW107109648A TWI663296B (zh) 2016-11-23 2018-03-21 Electroplated copper layer with copper crystal particles and method for preparing copper crystal particles
US16/803,967 US11613824B2 (en) 2016-11-23 2020-02-27 Bamboo-like copper crystal particles having a highly preferred orientation

Applications Claiming Priority (2)

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CN201611037367.6 2016-11-23
CN201611037367.6A CN106757191B (zh) 2016-11-23 2016-11-23 一种具有高择优取向的铜晶体颗粒及其制备方法

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US16/803,967 Division US11613824B2 (en) 2016-11-23 2020-02-27 Bamboo-like copper crystal particles having a highly preferred orientation

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KR (1) KR102095497B1 (zh)
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CN108396344B (zh) * 2018-03-19 2021-02-12 苏州昕皓新材料科技有限公司 具有扭曲带状无序缠绕微观结构的电解铜箔及其制备方法
CN108977860B (zh) * 2018-06-19 2020-03-31 南开大学 一种通过电沉积法在Mo衬底上沉积高质量Cu薄膜的方法
CN109082697B (zh) * 2018-09-12 2020-05-19 河北工业大学 一种柱状铜颗粒膜的制备方法
CN109112580A (zh) 2018-09-18 2019-01-01 苏州昕皓新材料科技有限公司 一种具有热力学各向异性的金属材料及其制备方法
CN113802155A (zh) * 2021-10-09 2021-12-17 南开大学 一种高晶面择优取向铜箔的室温电沉积制备方法
CN114086224B (zh) * 2021-12-21 2023-04-28 中国科学院深圳先进技术研究院 一种孪晶铜材料及制备方法和用途
KR20230121992A (ko) * 2022-02-11 2023-08-22 쑤저우 신하오 머티리얼즈 엘엘씨 나노 구리 결정입자 전기도금 방법
CN116043286A (zh) * 2022-12-29 2023-05-02 大连理工大学 一种镀铜层晶粒尺寸和取向可控的镀液及电镀方法

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