AU1330897A - Electroplated interconnection structures on integrated circuit chips - Google Patents

Electroplated interconnection structures on integrated circuit chips

Info

Publication number
AU1330897A
AU1330897A AU13308/97A AU1330897A AU1330897A AU 1330897 A AU1330897 A AU 1330897A AU 13308/97 A AU13308/97 A AU 13308/97A AU 1330897 A AU1330897 A AU 1330897A AU 1330897 A AU1330897 A AU 1330897A
Authority
AU
Australia
Prior art keywords
integrated circuit
circuit chips
interconnection structures
electroplated
electroplated interconnection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU13308/97A
Inventor
Panayotis Constantinou Andricacos
Hariklia Deligianni
John Owen Dukovic
Daniel Charles Edelstein
Wilma Jean Horkans
Chao-Kun Hu
Jeffery Louis Hurd
Kenneth Parker Rodbell
Cyprian Emeka Uzoh
Kwong Hon Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of AU1330897A publication Critical patent/AU1330897A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
AU13308/97A 1996-12-16 1996-12-16 Electroplated interconnection structures on integrated circuit chips Abandoned AU1330897A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US1996/019592 WO1998027585A1 (en) 1996-12-16 1996-12-16 Electroplated interconnection structures on integrated circuit chips

Publications (1)

Publication Number Publication Date
AU1330897A true AU1330897A (en) 1998-07-15

Family

ID=22256261

Family Applications (1)

Application Number Title Priority Date Filing Date
AU13308/97A Abandoned AU1330897A (en) 1996-12-16 1996-12-16 Electroplated interconnection structures on integrated circuit chips

Country Status (5)

Country Link
EP (1) EP0932913A1 (en)
JP (1) JP2000510289A (en)
KR (1) KR20000057470A (en)
AU (1) AU1330897A (en)
WO (1) WO1998027585A1 (en)

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US5989623A (en) * 1997-08-19 1999-11-23 Applied Materials, Inc. Dual damascene metallization
WO1999040615A1 (en) 1998-02-04 1999-08-12 Semitool, Inc. Method and apparatus for low-temperature annealing of metallization micro-structures in the production of a microelectronic device
US6297154B1 (en) 1998-08-28 2001-10-02 Agere System Guardian Corp. Process for semiconductor device fabrication having copper interconnects
JP3631392B2 (en) 1998-11-02 2005-03-23 株式会社神戸製鋼所 Method for forming wiring film
TW436990B (en) * 1998-11-24 2001-05-28 Motorola Inc Process for forming a semiconductor device
US6184137B1 (en) * 1998-11-25 2001-02-06 Applied Materials, Inc. Structure and method for improving low temperature copper reflow in semiconductor features
US6610190B2 (en) 2000-11-03 2003-08-26 Nutool, Inc. Method and apparatus for electrodeposition of uniform film with minimal edge exclusion on substrate
US7427337B2 (en) 1998-12-01 2008-09-23 Novellus Systems, Inc. System for electropolishing and electrochemical mechanical polishing
US6413388B1 (en) 2000-02-23 2002-07-02 Nutool Inc. Pad designs and structures for a versatile materials processing apparatus
US7204924B2 (en) 1998-12-01 2007-04-17 Novellus Systems, Inc. Method and apparatus to deposit layers with uniform properties
US6497800B1 (en) 2000-03-17 2002-12-24 Nutool Inc. Device providing electrical contact to the surface of a semiconductor workpiece during metal plating
US6544399B1 (en) * 1999-01-11 2003-04-08 Applied Materials, Inc. Electrodeposition chemistry for filling apertures with reflective metal
US6333560B1 (en) * 1999-01-14 2001-12-25 International Business Machines Corporation Process and structure for an interlock and high performance multilevel structures for chip interconnects and packaging technologies
DE19915146C1 (en) * 1999-01-21 2000-07-06 Atotech Deutschland Gmbh Production of highly pure copper wiring trace on semiconductor wafer for integrated circuit by applying metal base coat, plating and structurization uses dimensionally-stable insoluble counter-electrode in electroplating
US6297155B1 (en) * 1999-05-03 2001-10-02 Motorola Inc. Method for forming a copper layer over a semiconductor wafer
US6423636B1 (en) * 1999-11-19 2002-07-23 Applied Materials, Inc. Process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer
US6612915B1 (en) 1999-12-27 2003-09-02 Nutool Inc. Work piece carrier head for plating and polishing
US6354916B1 (en) 2000-02-11 2002-03-12 Nu Tool Inc. Modified plating solution for plating and planarization and process utilizing same
US7141146B2 (en) 2000-02-23 2006-11-28 Asm Nutool, Inc. Means to improve center to edge uniformity of electrochemical mechanical processing of workpiece surface
US6482307B2 (en) 2000-05-12 2002-11-19 Nutool, Inc. Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
US6852208B2 (en) 2000-03-17 2005-02-08 Nutool, Inc. Method and apparatus for full surface electrotreating of a wafer
AU2001247109A1 (en) 2000-04-27 2001-11-12 Nutool, Inc. Conductive structure for use in multi-level metallization and process
US6695962B2 (en) 2001-05-01 2004-02-24 Nutool Inc. Anode designs for planar metal deposits with enhanced electrolyte solution blending and process of supplying electrolyte solution using such designs
US6478936B1 (en) 2000-05-11 2002-11-12 Nutool Inc. Anode assembly for plating and planarizing a conductive layer
US7195696B2 (en) 2000-05-11 2007-03-27 Novellus Systems, Inc. Electrode assembly for electrochemical processing of workpiece
KR20020029626A (en) * 2000-10-13 2002-04-19 마티네즈 길러모 Electrolyte
KR100852636B1 (en) 2000-10-13 2008-08-18 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 Seed repair and electroplating bath
US6802946B2 (en) 2000-12-21 2004-10-12 Nutool Inc. Apparatus for controlling thickness uniformity of electroplated and electroetched layers
US6866763B2 (en) 2001-01-17 2005-03-15 Asm Nutool. Inc. Method and system monitoring and controlling film thickness profile during plating and electroetching
US6740221B2 (en) * 2001-03-15 2004-05-25 Applied Materials Inc. Method of forming copper interconnects
US6736954B2 (en) * 2001-10-02 2004-05-18 Shipley Company, L.L.C. Plating bath and method for depositing a metal layer on a substrate
KR100429770B1 (en) * 2001-11-15 2004-05-03 한국과학기술연구원 Copper electroplating solution
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US7416975B2 (en) 2005-09-21 2008-08-26 Novellus Systems, Inc. Method of forming contact layers on substrates
US9398700B2 (en) 2013-06-21 2016-07-19 Invensas Corporation Method of forming a reliable microelectronic assembly
CN106521573B (en) * 2016-11-23 2019-10-01 苏州昕皓新材料科技有限公司 Prepare the method and its application with the copper electroplating layer of preferred orientation growth structure
CN106757191B (en) * 2016-11-23 2019-10-01 苏州昕皓新材料科技有限公司 A kind of copper crystal particle and preparation method thereof with high preferred orientation
KR102562279B1 (en) 2018-01-26 2023-07-31 삼성전자주식회사 Plating solution and metal composite and method of manufacturing the same
KR20200109549A (en) 2019-03-13 2020-09-23 삼성전자주식회사 Polishing slurry and method of manufacturing semiconductor device
US11424133B2 (en) 2019-07-25 2022-08-23 Samsung Electronics Co., Ltd. Metal structure and method of manufacturing the same and metal wire and semiconductor device and electronic device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5256274A (en) * 1990-08-01 1993-10-26 Jaime Poris Selective metal electrodeposition process
US5391517A (en) * 1993-09-13 1995-02-21 Motorola Inc. Process for forming copper interconnect structure

Also Published As

Publication number Publication date
EP0932913A1 (en) 1999-08-04
JP2000510289A (en) 2000-08-08
KR20000057470A (en) 2000-09-15
WO1998027585A1 (en) 1998-06-25

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