WO2018049744A1 - Amoled像素驱动电路的制作方法 - Google Patents

Amoled像素驱动电路的制作方法 Download PDF

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WO2018049744A1
WO2018049744A1 PCT/CN2016/110727 CN2016110727W WO2018049744A1 WO 2018049744 A1 WO2018049744 A1 WO 2018049744A1 CN 2016110727 W CN2016110727 W CN 2016110727W WO 2018049744 A1 WO2018049744 A1 WO 2018049744A1
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layer
gate
active region
contact hole
depositing
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PCT/CN2016/110727
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English (en)
French (fr)
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迟世鹏
吴元均
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深圳市华星光电技术有限公司
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Priority to US15/328,498 priority Critical patent/US20180219184A1/en
Publication of WO2018049744A1 publication Critical patent/WO2018049744A1/zh

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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating an AMOLED pixel driving circuit.
  • OLED Organic Light Emitting Display
  • OLED Organic Light Emitting Display
  • the OLED display device can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor (Thin Film Transistor, according to the driving method). TFT) matrix addressing two types.
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • AMOLED is a current-driven device, which requires an active driving method to supply current to the OLED to obtain appropriate luminance.
  • the active driving method is realized by a pixel driving circuit composed of a TFT and a capacitor. Taking the most common 2T1C pixel driving circuit as an example, the TFT is divided into a driving thin film transistor and a switching thin film transistor. The driving thin film transistor is used to supply current to the OLED, and the switching thin film transistor is used to control the data input signal.
  • the TFTs in the pixel driving circuit can be realized by different structures and processes, such as a bottom gate staggered structure, and an Etch Stopper (ES) and a Back Channel Etching (BCE) process can be used.
  • ES Etch Stopper
  • BCE Back Channel Etching
  • the ES-type TFT process is relatively mature, and excellent device performance can be obtained.
  • the ES structure causes the TFT to have a large parasitic capacitance.
  • an AC signal is generated due to a large RC. Delay, affecting the response speed of the circuit.
  • the BCE type TFT has a small parasitic capacitance, which can reduce the influence of RC generation, but the back channel etching process brings other problems, resulting in poor TFT characteristics.
  • the ES type TFT In the AMOLED pixel driving circuit, if the ES type TFT is used alone, a large parasitic capacitance is generated, and the RC effect of the data signal is increased. If the BCE type TFT is simply used, the parasitic capacitance can be effectively reduced, but the TFT performance prepared by the BCE process is improved. Inferior to the ES type TFT, it will have an adverse effect on the luminescence of the OLED.
  • An object of the present invention is to provide a method for fabricating an AMOLED pixel driving circuit capable of simultaneously preparing an ES type TFT and a BCE type TFT, an ES type TFT serving as a driving thin film transistor, and a BCE type TFT serving as a switching thin film transistor, which can reduce an RC effect It is beneficial to the control of the AC data signal, and can provide a stable current for the OLED, ensuring the stability and uniformity of the OLED illumination.
  • the present invention provides a method for fabricating an AMOLED pixel driving circuit, comprising the following steps:
  • Step 1 providing a substrate, depositing and etching a first metal layer on the substrate to form a patterned first gate and a second gate;
  • Step 2 depositing a gate insulating layer on the base substrate, the first gate, and the second gate;
  • Step 3 depositing and etching a semiconductor layer on the gate insulating layer, forming a patterned first active region and a second active region over the first gate and the second gate, respectively;
  • Step 4 depositing and etching a second insulating layer on the first active region, the second active region, and the gate insulating layer, leaving only the second insulating layer covering the second active region as an etch barrier a layer, simultaneously etching a first contact hole and a second contact hole in the etch barrier layer, respectively exposing two sides of the second active region;
  • Step 5 etching the gate insulating layer to form a third contact hole, exposing a side of the second gate close to the first gate;
  • Step 6 Depositing and etching a second metal layer on the first active region, the etch barrier layer, and the gate insulating layer to form a patterned first source, first drain, and second source And a second drain; the first source directly contacts a side of the first active region adjacent to the second active region and connects the second gate through the third contact hole, the first drain directly Contacting the other side of the first active region; the second source and the second drain are respectively connected to two sides of the second active region through the first contact hole and the second contact hole;
  • the first source, the first drain, the first active region, the gate insulating layer and the first gate constitute a switching thin film transistor
  • the second source, the second drain, the etch barrier, and the first The two active regions, the gate insulating layer and the second gate constitute a driving thin film transistor.
  • the manufacturing method of the AMOLED pixel driving circuit further includes:
  • Step 7 sequentially depositing a cover passivation protective layer and a first organic flat layer, and then performing etching to form a fourth contact hole penetrating the passivation protective layer and the first organic flat layer to expose the second source Partial surface
  • Step 8 Depositing and etching a transparent conductive layer on the first organic flat layer to form an OLED anode, wherein the OLED anode is connected to the second source through a fourth contact hole;
  • Step 9 Depositing and etching a second organic flat layer on the OLED anode and the first organic flat layer to form a fifth contact hole to expose a part of the surface of the OLED anode;
  • Step 10 preparing an OLED light-emitting layer in the fifth contact hole
  • Step 11 depositing an OLED cathode on the OLED light emitting layer and the second organic flat layer;
  • the base substrate is a glass substrate.
  • the material of the gate insulating layer and the etch barrier layer is silicon oxide, silicon nitride, or a combination of the two.
  • the material of the semiconductor layer is a metal oxide semiconductor or an amorphous silicon semiconductor.
  • the material of the semiconductor layer is indium gallium zinc oxide.
  • the materials of the first metal layer and the second metal layer are a combination of one or a combination of molybdenum, titanium, aluminum, copper, and silver.
  • the material of the passivation protective layer is silicon oxide, silicon nitride, or a combination of the two.
  • the material of the transparent conductive layer is indium tin oxide.
  • the step 10 is to prepare an OLED luminescent layer by an evaporation process or an inkjet printing process
  • the step 11 is deposited by an evaporation process to cover the OLED cathode.
  • the invention also provides a method for fabricating an AMOLED pixel driving circuit, comprising the following steps:
  • Step 1 providing a substrate, depositing and etching a first metal layer on the substrate to form a patterned first gate and a second gate;
  • Step 2 depositing a gate insulating layer on the base substrate, the first gate, and the second gate;
  • Step 3 depositing and etching a semiconductor layer on the gate insulating layer, forming a patterned first active region and a second active region over the first gate and the second gate, respectively;
  • Step 4 depositing and etching a second insulating layer on the first active region, the second active region, and the gate insulating layer, leaving only the second insulating layer covering the second active region as an etch barrier a layer, simultaneously etching a first contact hole and a second contact hole in the etch barrier layer, respectively exposing two sides of the second active region;
  • Step 5 etching the gate insulating layer to form a third contact hole, exposing a side of the second gate close to the first gate;
  • Step 6 Depositing and etching on the first active region, the etch barrier layer, and the gate insulating layer a second metal layer, forming a patterned first source, a first drain, a second source, and a second drain; the first source directly contacting the first active region adjacent to the second active region Connecting the second gate to one side through the third contact hole, the first drain directly contacting the other side of the first active region; the second source and the second drain respectively pass the first contact a hole and a second contact hole are connected to both sides of the second active area;
  • the first source, the first drain, the first active region, the gate insulating layer and the first gate constitute a switching thin film transistor
  • the second source, the second drain, the etch barrier, and the first The active region, the gate insulating layer and the second gate constitute a driving thin film transistor
  • Step 7 sequentially depositing a cover passivation protective layer and a first organic flat layer, and then performing etching to form a fourth contact hole penetrating the passivation protective layer and the first organic flat layer to expose the second source Partial surface
  • Step 8 Depositing and etching a transparent conductive layer on the first organic flat layer to form an OLED anode, wherein the OLED anode is connected to the second source through a fourth contact hole;
  • Step 9 Depositing and etching a second organic flat layer on the OLED anode and the first organic flat layer to form a fifth contact hole to expose a part of the surface of the OLED anode;
  • Step 10 preparing an OLED light-emitting layer in the fifth contact hole
  • Step 11 depositing an OLED cathode on the OLED light emitting layer and the second organic flat layer;
  • the base substrate is a glass substrate.
  • the method for fabricating an AMOLED pixel driving circuit provided by the present invention only retains a second insulating layer covering the second active region as an etch barrier layer, and fabricates an ES-type driving thin film transistor, and BCE type switching thin film transistor.
  • the BCE type switching thin film transistor has a small parasitic capacitance, which can reduce the RC effect and facilitate the control of the AC data signal.
  • the ES type driving thin film transistor has excellent device characteristics, can provide a stable current for the OLED, and ensures OLED illumination. With stability and uniformity.
  • FIG. 1 is a flow chart of a method for fabricating an AMOLED pixel driving circuit of the present invention
  • FIG. 2 is a schematic diagram of step 1 of a method for fabricating an AMOLED pixel driving circuit of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating an AMOLED pixel driving circuit of the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating an AMOLED pixel driving circuit of the present invention
  • step 4 is a schematic diagram of step 4 of a method for fabricating an AMOLED pixel driving circuit of the present invention
  • step 5 is a schematic diagram of step 5 of a method for fabricating an AMOLED pixel driving circuit of the present invention
  • step 6 is a schematic diagram of step 6 of a method for fabricating an AMOLED pixel driving circuit of the present invention.
  • step 7 is a schematic diagram of step 7 of a method for fabricating an AMOLED pixel driving circuit of the present invention.
  • step 8 is a schematic diagram of step 8 of a method for fabricating an AMOLED pixel driving circuit of the present invention.
  • step 9 is a schematic diagram of step 9 of a method for fabricating an AMOLED pixel driving circuit of the present invention.
  • step 10 is a schematic diagram of step 10 of a method for fabricating an AMOLED pixel driving circuit of the present invention.
  • FIG. 12 is a schematic diagram of step 11 of the method for fabricating an AMOLED pixel driving circuit of the present invention.
  • the present invention provides a method for fabricating an AMOLED pixel driving circuit, including the following steps:
  • Step 1 as shown in FIG. 2, a substrate 1 is provided on which a first metal layer is deposited and etched to form a patterned first gate 21 and a second gate 22.
  • the base substrate 1 is a transparent substrate, preferably a glass substrate.
  • the material of the first metal layer is a stack combination of one or more of molybdenum (Mo), titanium (Ti), aluminum (Al), copper (Cu), and silver (Ag).
  • Step 2 As shown in FIG. 3, a cover insulating layer 3 is deposited on the base substrate 1, the first gate 21, and the second gate 22.
  • the material of the gate insulating layer 3 is silicon oxide (SiOx), silicon nitride (SiNx), or a combination of the two.
  • Step 3 depositing and etching a semiconductor layer on the gate insulating layer 3, forming a patterned first active region 41 over the first gate 21 and the second gate 22, respectively. And a second active region 42.
  • the material of the semiconductor layer may be, but not limited to, a metal oxide semiconductor or an amorphous silicon semiconductor.
  • the material of the semiconductor layer is Indium Gallium Zinc Oxide (IGZO).
  • Step 4 depositing and etching a second insulating layer on the first active region 41, the second active region 42, and the gate insulating layer 3, leaving only the second active region
  • the second insulating layer 42 serves as the etch stop layer 5, and simultaneously etches the first contact hole 51 and the second contact hole 52 in the etch barrier layer 5 to expose both sides of the second active region 42 respectively.
  • the material of the etch barrier layer 5 is also silicon oxide, silicon nitride, or a combination of the two.
  • Step 5 As shown in FIG. 6, the gate insulating layer 3 is etched to form a third contact hole 31 exposing the side of the second gate 22 close to the first gate 21.
  • Step 6 depositing and etching a second metal layer on the first active region 41, the etch barrier layer 5, and the gate insulating layer 3 to form a patterned first source 61 a first drain electrode 62, a second source electrode 63, and a second drain electrode 64; the first source electrode 61 directly contacts a side of the first active region 41 adjacent to the second active region 42 and passes through the first
  • the third contact hole 31 is connected to the second gate 22, and the first drain electrode 62 directly contacts the other side of the first active region 41.
  • the second source electrode 63 and the second drain electrode 64 respectively pass through the first contact hole. 51.
  • the second contact hole 52 is connected to both sides of the second active region 42.
  • the first source 61, the first drain 62, the first active region 41, the gate insulating layer 3, and the first gate 21 constitute a switching thin film transistor T1, because the first source 61 and the first drain 62 is directly in contact with the first active region 41, and there is no etch barrier layer.
  • the switching thin film transistor T1 belongs to a BCE type TFT; the second source 63, the second drain 64, the etch barrier 5, and the second
  • the active region 42, the gate insulating layer 3 and the second gate 22 constitute a driving thin film transistor T2, and the second source 63 and the second drain 64 are separated from the second active region 42 by an etch barrier layer. 5.
  • the driving thin film transistor T2 belongs to an ES type TFT.
  • the BCE type switching thin film crystal T1 tube has a small parasitic capacitance, which can reduce the RC effect and facilitate the control of the AC data signal;
  • the ES type driving thin film transistor T2 has excellent device characteristics and can be The OLED provides a stable current that ensures OLED illumination with stability and uniformity.
  • the material of the second metal layer in the step 6 is also in molybdenum, titanium, aluminum, copper, and silver. One or several stack combinations.
  • the method for fabricating the AMOLED pixel driving circuit of the present invention further includes:
  • Step 7 sequentially depositing the cover passivation protective layer 7 and the first organic flat layer 8, and then performing etching to form a fourth contact hole penetrating the passivation protective layer 7 and the first organic flat layer 8. 87, exposing a portion of the surface of the second source 63.
  • the material of the passivation protective layer 7 is silicon oxide, silicon nitride, or a combination of the two.
  • Step 8 As shown in FIG. 9, a transparent conductive layer is deposited and etched on the first organic flat layer 8, forming an OLED anode 9, and the OLED anode 9 is connected to the second source 63 through a fourth contact hole 87.
  • the material of the transparent conductive layer is Indium Tin Oxide (ITO).
  • Step 9 As shown in FIG. 10, the second organic flat layer 10 is deposited and etched on the OLED anode 9 and the first organic flat layer 8, and a fifth contact hole 101 is formed to expose a part of the surface of the OLED anode 9.
  • Step 10 As shown in FIG. 11, an OLED light-emitting layer 11 is prepared in the fifth contact hole 101.
  • the OLED light-emitting layer 11 is prepared by an evaporation process or an inkjet printing process (Ink Jet Printing, IJP).
  • Step 11 As shown in FIG. 12, a OLED cathode 12 is deposited on the OLED light emitting layer 11 and the second organic flat layer 10.
  • the step 11 deposits the OLED cathode 12 by an evaporation process.
  • the method for fabricating the AMOLED pixel driving circuit of the present invention only retains the second insulating layer covering the second active region as an etch barrier layer, and fabricates an ES-type driving thin film transistor and a BCE type switch.
  • Thin film transistor The BCE type switching thin film transistor has a small parasitic capacitance, which can reduce the RC effect and facilitate the control of the AC data signal.
  • the ES type driving thin film transistor has excellent device characteristics, can provide a stable current for the OLED, and ensures OLED illumination. With stability and uniformity.

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Abstract

本发明提供一种AMOLED像素驱动电路的制作方法，仅保留覆盖第二有源区(42)的第二绝缘层作为刻蚀阻挡层(5)，制作出了ES型的驱动薄膜晶体管(T2)、及BCE型的开关薄膜晶体管(T1)。BCE型的开关薄膜晶体管(T1)具有较小的寄生电容，可以减小RC效应，有利于交流数据信号的控制；ES型的驱动薄膜晶体管(T2)具有优良的器件特性，可以为OLED提供稳定的电流，确保OLED发光具有稳定性和均匀性。

Description

AMOLED像素驱动电路的制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种AMOLED像素驱动电路的制作方法。
背景技术
有机发光二极管(Organic Light Emitting Display，OLED)显示装置具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED显示装置按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管(Thin Film Transistor，TFT)矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
AMOLED是电流驱动器件，需要采用有源驱动的方式为OLED提供电流以得到适当的发光亮度，有源驱动方式由TFT及电容构成的像素驱动电路实现。以最常见的2T1C像素驱动电路为例，TFT分为驱动薄膜晶体管和开关薄膜晶体管，驱动薄膜晶体管的作用是为OLED提供电流，开关薄膜晶体管的作用是控制数据输入信号。
像素驱动电路中的TFT可以采用不同的结构和工艺实现，如底栅交错型结构，可采用刻蚀阻挡层(Etch Stopper，ES)和背沟道刻蚀(Back Channel Etching，BCE)两种工艺来制备。目前ES型TFT工艺比较成熟，可以得到优良的器件性能，但ES结构导致了TFT具有较大的寄生电容，在作为开关薄膜晶体管使用时，会因较大的阻容(RC)使交流信号产生延迟，影响电路的响应速度。与ES型TFT性比，BCE型的TFT具有较小的寄生电容，可以减小RC产生的影响，但背沟道刻蚀工艺会带来其它问题，造成TFT特性不佳。
在AMOLED像素驱动电路中，若单纯采用ES型TFT会产生较大的寄生电容，增加数据信号的RC效应；若单纯采用BCE型TFT虽然可以有效的减小寄生电容，但是BCE工艺制备的TFT性能不如ES型TFT，会对OLED的发光产生不良影响。
发明内容
本发明的目的在于提供一种AMOLED像素驱动电路的制作方法，能够同时制备ES型TFT和BCE型TFT，ES型TFT用作驱动薄膜晶体管，BCE型TFT用作开关薄膜晶体管，可以减小RC效应，有利于交流数据信号的控制，同时可以为OLED提供稳定的电流，确保OLED发光具有稳定性和均匀性。
为实现上述目的，本发明提供一种AMOLED像素驱动电路的制作方法，包括如下步骤：
步骤1、提供一衬底基板，在所述衬底基板上沉积并刻蚀第一金属层，形成图案化的第一栅极、及第二栅极；
步骤2、在所述衬底基板、第一栅极、及第二栅极上沉积覆盖栅极绝缘层；
步骤3、在所述栅极绝缘层上沉积并刻蚀半导体层，分别于第一栅极、第二栅极上方形成图案化的第一有源区、及第二有源区；
步骤4、在所述第一有源区、第二有源区、及栅极绝缘层上沉积并刻蚀第二绝缘层，仅保留覆盖第二有源区的第二绝缘层作为刻蚀阻挡层，同时在刻蚀阻挡层内刻蚀出第一接触孔、及第二接触孔，分别暴露出第二有源区的两侧；
步骤5、刻蚀栅极绝缘层，形成第三接触孔，暴露出第二栅极靠近第一栅极的一侧；
步骤6、在所述第一有源区、刻蚀阻挡层、及栅极绝缘层上沉积并刻蚀第二金属层，形成图案化的第一源极、第一漏极、第二源极、及第二漏极；所述第一源极直接接触第一有源区靠近第二有源区的一侧并通过所述第三接触孔连接第二栅极，所述第一漏极直接接触第一有源区的另一侧；所述第二源极、第二漏极分别通过第一接触孔、第二接触孔连接第二有源区的两侧；
所述第一源极、第一漏极、第一有源区、栅极绝缘层及第一栅极构成开关薄膜晶体管，所述第二源极、第二漏极、刻蚀阻挡层、第二有源区、栅极绝缘层及第二栅极构成驱动薄膜晶体管。
所述AMOLED像素驱动电路的制作方法还包括：
步骤7、依次沉积覆盖钝化保护层、及第一有机平坦层，再进行刻蚀，形成贯通钝化保护层与第一有机平坦层的第四接触孔，暴露出所述第二源极的部分表面；
步骤8、在第一有机平坦层上沉积并刻蚀透明导电层，形成OLED阳极，所述OLED阳极通过第四接触孔连接所述第二源极；
步骤9、在所述OLED阳极及第一有机平坦层上沉积并刻蚀第二有机平坦层，形成第五接触孔，暴露出OLED阳极的部分表面；
步骤10、在第五接触孔内制备OLED发光层；
步骤11、在所述OLED发光层与第二有机平坦层上沉积覆盖OLED阴极；
步骤12、封装。
所述衬底基板为玻璃基板。
所述栅极绝缘层与刻蚀阻挡层的材料为氧化硅、氮化硅、或二者的组合。
所述半导体层的材料为金属氧化物半导体、或非晶硅半导体。
进一步地，所述半导体层的材料为铟镓锌氧化物。
所述第一金属层与第二金属层的材料均为钼、钛、铝、铜、银中的一种或几种的堆栈组合。
所述钝化保护层的材料为氧化硅、氮化硅、或二者的组合。
所述透明导电层的材料为氧化铟锡。
所述步骤10采用蒸镀工艺或喷墨印刷工艺制备OLED发光层；
所述步骤11采用蒸镀工艺沉积覆盖OLED阴极。
本发明还提供一种AMOLED像素驱动电路的制作方法，包括如下步骤：
步骤1、提供一衬底基板，在所述衬底基板上沉积并刻蚀第一金属层，形成图案化的第一栅极、及第二栅极；
步骤2、在所述衬底基板、第一栅极、及第二栅极上沉积覆盖栅极绝缘层；
步骤3、在所述栅极绝缘层上沉积并刻蚀半导体层，分别于第一栅极、第二栅极上方形成图案化的第一有源区、及第二有源区；
步骤4、在所述第一有源区、第二有源区、及栅极绝缘层上沉积并刻蚀第二绝缘层，仅保留覆盖第二有源区的第二绝缘层作为刻蚀阻挡层，同时在刻蚀阻挡层内刻蚀出第一接触孔、及第二接触孔，分别暴露出第二有源区的两侧；
步骤5、刻蚀栅极绝缘层，形成第三接触孔，暴露出第二栅极靠近第一栅极的一侧；
步骤6、在所述第一有源区、刻蚀阻挡层、及栅极绝缘层上沉积并刻蚀 第二金属层，形成图案化的第一源极、第一漏极、第二源极、及第二漏极；所述第一源极直接接触第一有源区靠近第二有源区的一侧并通过所述第三接触孔连接第二栅极，所述第一漏极直接接触第一有源区的另一侧；所述第二源极、第二漏极分别通过第一接触孔、第二接触孔连接第二有源区的两侧；
所述第一源极、第一漏极、第一有源区、栅极绝缘层及第一栅极构成开关薄膜晶体管，所述第二源极、第二漏极、刻蚀阻挡层、第二有源区、栅极绝缘层及第二栅极构成驱动薄膜晶体管；
步骤7、依次沉积覆盖钝化保护层、及第一有机平坦层，再进行刻蚀，形成贯通钝化保护层与第一有机平坦层的第四接触孔，暴露出所述第二源极的部分表面；
步骤8、在第一有机平坦层上沉积并刻蚀透明导电层，形成OLED阳极，所述OLED阳极通过第四接触孔连接所述第二源极；
步骤9、在所述OLED阳极及第一有机平坦层上沉积并刻蚀第二有机平坦层，形成第五接触孔，暴露出OLED阳极的部分表面；
步骤10、在第五接触孔内制备OLED发光层；
步骤11、在所述OLED发光层与第二有机平坦层上沉积覆盖OLED阴极；
步骤12、封装；
其中，所述衬底基板为玻璃基板。
本发明的有益效果：本发明提供的一种AMOLED像素驱动电路的制作方法，仅保留覆盖第二有源区的第二绝缘层作为刻蚀阻挡层，制作出了ES型的驱动薄膜晶体管、及BCE型的开关薄膜晶体管。BCE型的开关薄膜晶体管具有较小的寄生电容，可以减小RC效应，有利于交流数据信号的控制；ES型的驱动薄膜晶体管具有优良的器件特性，可以为OLED提供稳定的电流，确保OLED发光具有稳定性和均匀性。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的AMOLED像素驱动电路的制作方法的流程图；
图2为本发明的AMOLED像素驱动电路的制作方法的步骤1的示意 图；
图3为本发明的AMOLED像素驱动电路的制作方法的步骤2的示意图；
图4为本发明的AMOLED像素驱动电路的制作方法的步骤3的示意图；
图5为本发明的AMOLED像素驱动电路的制作方法的步骤4的示意图；
图6为本发明的AMOLED像素驱动电路的制作方法的步骤5的示意图；
图7为本发明的AMOLED像素驱动电路的制作方法的步骤6的示意图；
图8为本发明的AMOLED像素驱动电路的制作方法的步骤7的示意图；
图9为本发明的AMOLED像素驱动电路的制作方法的步骤8的示意图；
图10为本发明的AMOLED像素驱动电路的制作方法的步骤9的示意图；
图11为本发明的AMOLED像素驱动电路的制作方法的步骤10的示意图；
图12为本发明的AMOLED像素驱动电路的制作方法的步骤11的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种AMOLED像素驱动电路的制作方法，包括如下步骤：
步骤1、如图2所示，提供一衬底基板1，在所述衬底基板1上沉积并刻蚀第一金属层，形成图案化的第一栅极21、及第二栅极22。
具体地，所述衬底基板1为透明基板，优选玻璃基板。
所述第一金属层的材料为钼(Mo)、钛(Ti)、铝(Al)、铜(Cu)、银(Ag)中的一种或几种的堆栈组合。
步骤2、如图3所示，在所述衬底基板1、第一栅极21、及第二栅极22上沉积覆盖栅极绝缘层3。
具体地，所述栅极绝缘层3的材料为氧化硅(SiOx)、氮化硅(SiNx)、或二者的组合。
步骤3、如图4所示，在所述栅极绝缘层3上沉积并刻蚀半导体层，分别于第一栅极21、第二栅极22上方形成图案化的第一有源区41、及第二有源区42。
具体地，所述半导体层的材料可以但不限于为金属氧化物半导体、或非晶硅半导体，优选的，所述半导体层的材料为铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)。
步骤4、如图5所示，在所述第一有源区41、第二有源区42、及栅极绝缘层3上沉积并刻蚀第二绝缘层，仅保留覆盖第二有源区42的第二绝缘层作为刻蚀阻挡层5，同时在刻蚀阻挡层5内刻蚀出第一接触孔51、及第二接触孔52，分别暴露出第二有源区42的两侧。
具体地，所述刻蚀阻挡层5的材料亦为氧化硅、氮化硅、或二者的组合。
步骤5、如图6所示，刻蚀栅极绝缘层3，形成第三接触孔31，暴露出第二栅极22靠近第一栅极21的一侧。
步骤6、如图7所示，在所述第一有源区41、刻蚀阻挡层5、及栅极绝缘层3上沉积并刻蚀第二金属层，形成图案化的第一源极61、第一漏极62、第二源极63、及第二漏极64；所述第一源极61直接接触第一有源区41靠近第二有源区42的一侧并通过所述第三接触孔31连接第二栅极22，所述第一漏极62直接接触第一有源区41的另一侧；所述第二源极63、第二漏极64分别通过第一接触孔51、第二接触孔52连接第二有源区42的两侧。
所述第一源极61、第一漏极62、第一有源区41、栅极绝缘层3及第一栅极21构成开关薄膜晶体管T1，由于第一源极61、及第一漏极62直接与第一有源区41接触，不存在刻蚀阻挡层，该开关薄膜晶体管T1属于BCE型TFT；所述第二源极63、第二漏极64、刻蚀阻挡层5、第二有源区42、栅极绝缘层3及第二栅极22构成驱动薄膜晶体管T2，由于第二源极63、及第二漏极64与第二有源区42隔了一层刻蚀阻挡层5，该驱动薄膜晶体管T2属于ES型TFT。
针对AMOLED像素驱动电路，BCE型的开关薄膜晶体T1管具有较小的寄生电容，可以减小RC效应，有利于交流数据信号的控制；ES型的驱动薄膜晶体管T2具有优良的器件特性，可以为OLED提供稳定的电流，确保OLED发光具有稳定性和均匀性。
具体地，该步骤6中的第二金属层的材料亦为钼、钛、铝、铜、银中 的一种或几种的堆栈组合。
进一步地，本发明的AMOLED像素驱动电路的制作方法，还包括：
步骤7、如图8所示，依次沉积覆盖钝化保护层7、及第一有机平坦层8，再进行刻蚀，形成贯通钝化保护层7与第一有机平坦层8的第四接触孔87，暴露出所述第二源极63的部分表面。
具体地，所述钝化保护层7的材料为氧化硅、氮化硅、或二者的组合。
步骤8、如图9所示，在第一有机平坦层8上沉积并刻蚀透明导电层，形成OLED阳极9，所述OLED阳极9通过第四接触孔87连接所述第二源极63。
具体地，所述透明导电层的材料为氧化铟锡(Indium Tin Oxide，ITO)。
步骤9、如图10所示，在所述OLED阳极9及第一有机平坦层8上沉积并刻蚀第二有机平坦层10，形成第五接触孔101，暴露出OLED阳极9的部分表面。
步骤10、如图11所示，在第五接触孔101内制备OLED发光层11。
具体地，该步骤10采用蒸镀工艺或喷墨印刷工艺(Ink Jet Printing，IJP)制备OLED发光层11。
步骤11、如图12所示，在所述OLED发光层11与第二有机平坦层10上沉积覆盖OLED阴极12。
具体地，该步骤11采用蒸镀工艺沉积覆盖OLED阴极12。
步骤12、封装。
至此完成AMOLED像素驱动电路的制作。
综上所述，本发明的AMOLED像素驱动电路的制作方法，仅保留覆盖第二有源区的第二绝缘层作为刻蚀阻挡层，制作出了ES型的驱动薄膜晶体管、及BCE型的开关薄膜晶体管。BCE型的开关薄膜晶体管具有较小的寄生电容，可以减小RC效应，有利于交流数据信号的控制；ES型的驱动薄膜晶体管具有优良的器件特性，可以为OLED提供稳定的电流，确保OLED发光具有稳定性和均匀性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (18)

  1. 一种AMOLED像素驱动电路的制作方法，包括如下步骤：
    步骤1、提供一衬底基板，在所述衬底基板上沉积并刻蚀第一金属层，形成图案化的第一栅极、及第二栅极；
    步骤2、在所述衬底基板、第一栅极、及第二栅极上沉积覆盖栅极绝缘层；
    步骤3、在所述栅极绝缘层上沉积并刻蚀半导体层，分别于第一栅极、第二栅极上方形成图案化的第一有源区、及第二有源区；
    步骤4、在所述第一有源区、第二有源区、及栅极绝缘层上沉积并刻蚀第二绝缘层，仅保留覆盖第二有源区的第二绝缘层作为刻蚀阻挡层，同时在刻蚀阻挡层内刻蚀出第一接触孔、及第二接触孔，分别暴露出第二有源区的两侧；
    步骤5、刻蚀栅极绝缘层，形成第三接触孔，暴露出第二栅极靠近第一栅极的一侧；
    步骤6、在所述第一有源区、刻蚀阻挡层、及栅极绝缘层上沉积并刻蚀第二金属层，形成图案化的第一源极、第一漏极、第二源极、及第二漏极；所述第一源极直接接触第一有源区靠近第二有源区的一侧并通过所述第三接触孔连接第二栅极，所述第一漏极直接接触第一有源区的另一侧；所述第二源极、第二漏极分别通过第一接触孔、第二接触孔连接第二有源区的两侧；
    所述第一源极、第一漏极、第一有源区、栅极绝缘层及第一栅极构成开关薄膜晶体管，所述第二源极、第二漏极、刻蚀阻挡层、第二有源区、栅极绝缘层及第二栅极构成驱动薄膜晶体管。
  2. 如权利要求1所述的AMOLED像素驱动电路的制作方法，还包括：
    步骤7、依次沉积覆盖钝化保护层、及第一有机平坦层，再进行刻蚀，形成贯通钝化保护层与第一有机平坦层的第四接触孔，暴露出所述第二源极的部分表面；
    步骤8、在第一有机平坦层上沉积并刻蚀透明导电层，形成OLED阳极，所述OLED阳极通过第四接触孔连接所述第二源极；
    步骤9、在所述OLED阳极及第一有机平坦层上沉积并刻蚀第二有机平坦层，形成第五接触孔，暴露出OLED阳极的部分表面；
    步骤10、在第五接触孔内制备OLED发光层；
    步骤11、在所述OLED发光层与第二有机平坦层上沉积覆盖OLED阴极；
    步骤12、封装。
  3. 如权利要求1所述的AMOLED像素驱动电路的制作方法，其中，所述衬底基板为玻璃基板。
  4. 如权利要求1所述的AMOLED像素驱动电路的制作方法，其中，所述栅极绝缘层与刻蚀阻挡层的材料为氧化硅、氮化硅、或二者的组合。
  5. 如权利要求1所述的AMOLED像素驱动电路的制作方法，其中，所述半导体层的材料为金属氧化物半导体、或非晶硅半导体。
  6. 如权利要求5所述的AMOLED像素驱动电路的制作方法，其中，所述半导体层的材料为铟镓锌氧化物。
  7. 如权利要求1所述的AMOLED像素驱动电路的制作方法，其中，所述第一金属层与第二金属层的材料均为钼、钛、铝、铜、银中的一种或几种的堆栈组合。
  8. 如权利要求2所述的AMOLED像素驱动电路的制作方法，其中，所述钝化保护层的材料为氧化硅、氮化硅、或二者的组合。
  9. 如权利要求2所述的AMOLED像素驱动电路的制作方法，其中，所述透明导电层的材料为氧化铟锡。
  10. 如权利要求2所述的AMOLED像素驱动电路的制作方法，其中，所述步骤10采用蒸镀工艺或喷墨印刷工艺制备OLED发光层；所述步骤11采用蒸镀工艺沉积覆盖OLED阴极。
  11. 一种AMOLED像素驱动电路的制作方法，包括如下步骤：
    步骤1、提供一衬底基板，在所述衬底基板上沉积并刻蚀第一金属层，形成图案化的第一栅极、及第二栅极；
    步骤2、在所述衬底基板、第一栅极、及第二栅极上沉积覆盖栅极绝缘层；
    步骤3、在所述栅极绝缘层上沉积并刻蚀半导体层，分别于第一栅极、第二栅极上方形成图案化的第一有源区、及第二有源区；
    步骤4、在所述第一有源区、第二有源区、及栅极绝缘层上沉积并刻蚀第二绝缘层，仅保留覆盖第二有源区的第二绝缘层作为刻蚀阻挡层，同时在刻蚀阻挡层内刻蚀出第一接触孔、及第二接触孔，分别暴露出第二有源区的两侧；
    步骤5、刻蚀栅极绝缘层，形成第三接触孔，暴露出第二栅极靠近第一栅极的一侧；
    步骤6、在所述第一有源区、刻蚀阻挡层、及栅极绝缘层上沉积并刻蚀第二金属层，形成图案化的第一源极、第一漏极、第二源极、及第二漏极；所述第一源极直接接触第一有源区靠近第二有源区的一侧并通过所述第三接触孔连接第二栅极，所述第一漏极直接接触第一有源区的另一侧；所述第二源极、第二漏极分别通过第一接触孔、第二接触孔连接第二有源区的两侧；
    所述第一源极、第一漏极、第一有源区、栅极绝缘层及第一栅极构成开关薄膜晶体管，所述第二源极、第二漏极、刻蚀阻挡层、第二有源区、栅极绝缘层及第二栅极构成驱动薄膜晶体管；
    步骤7、依次沉积覆盖钝化保护层、及第一有机平坦层，再进行刻蚀，形成贯通钝化保护层与第一有机平坦层的第四接触孔，暴露出所述第二源极的部分表面；
    步骤8、在第一有机平坦层上沉积并刻蚀透明导电层，形成OLED阳极，所述OLED阳极通过第四接触孔连接所述第二源极；
    步骤9、在所述OLED阳极及第一有机平坦层上沉积并刻蚀第二有机平坦层，形成第五接触孔，暴露出OLED阳极的部分表面；
    步骤10、在第五接触孔内制备OLED发光层；
    步骤11、在所述OLED发光层与第二有机平坦层上沉积覆盖OLED阴极；
    步骤12、封装；
    其中，所述衬底基板为玻璃基板。
  12. 如权利要求11所述的AMOLED像素驱动电路的制作方法，其中，所述栅极绝缘层与刻蚀阻挡层的材料为氧化硅、氮化硅、或二者的组合。
  13. 如权利要求11所述的AMOLED像素驱动电路的制作方法，其中，所述半导体层的材料为金属氧化物半导体、或非晶硅半导体。
  14. 如权利要求13所述的AMOLED像素驱动电路的制作方法，其中，所述半导体层的材料为铟镓锌氧化物。
  15. 如权利要求11所述的AMOLED像素驱动电路的制作方法，其中，所述第一金属层与第二金属层的材料均为钼、钛、铝、铜、银中的一种或几种的堆栈组合。
  16. 如权利要求11所述的AMOLED像素驱动电路的制作方法，其中，所述钝化保护层的材料为氧化硅、氮化硅、或二者的组合。
  17. 如权利要求11所述的AMOLED像素驱动电路的制作方法，其中，所述透明导电层的材料为氧化铟锡。
  18. 如权利要求11所述的AMOLED像素驱动电路的制作方法，其中，所述步骤10采用蒸镀工艺或喷墨印刷工艺制备OLED发光层；所述步骤11采用蒸镀工艺沉积覆盖OLED阴极。
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