WO2018036027A1 - Ips型阵列基板的制作方法及ips型阵列基板 - Google Patents

Ips型阵列基板的制作方法及ips型阵列基板 Download PDF

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Publication number
WO2018036027A1
WO2018036027A1 PCT/CN2016/110070 CN2016110070W WO2018036027A1 WO 2018036027 A1 WO2018036027 A1 WO 2018036027A1 CN 2016110070 W CN2016110070 W CN 2016110070W WO 2018036027 A1 WO2018036027 A1 WO 2018036027A1
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WIPO (PCT)
Prior art keywords
insulating protective
protective layer
layer
channel
array substrate
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PCT/CN2016/110070
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English (en)
French (fr)
Inventor
周志超
夏慧
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深圳市华星光电技术有限公司
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Priority to US15/328,495 priority Critical patent/US10120246B2/en
Publication of WO2018036027A1 publication Critical patent/WO2018036027A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
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    • G02—OPTICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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    • G02F1/133514—Colour filters
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for fabricating an IPS type array substrate and an IPS type array substrate.
  • TFT-LCD Thin Film Transistor Liquid Crystal Display
  • liquid crystal display devices which include a liquid crystal display panel and a backlight module.
  • the working principle of the liquid crystal display panel is to place liquid crystal molecules in two parallel glass substrates. There are many vertical and horizontal small wires between the two glass substrates, and the liquid crystal molecules are controlled to change direction by energizing or not, and the light of the backlight module is changed. Refracted to produce a picture.
  • the liquid crystal display panel is composed of a CF (Color Filter) substrate, an array substrate, a liquid crystal (LC) sandwiched between the color filter substrate and the array substrate, and a sealant frame (Sealant), and the molding process generally includes : Array process (film, yellow light, etching and stripping), middle cell (Cell process) (array substrate and CF substrate) and rear module assembly process (drive IC and printed circuit board voltage) Combined).
  • the front Array process mainly forms an array substrate to control the movement of the liquid crystal molecules;
  • the middle Cell process mainly adds liquid crystal between the array substrate and the CF substrate;
  • the rear module assembly process is mainly to drive the IC to press and print the circuit.
  • the integration of the plates drives the liquid crystal molecules to rotate and display images.
  • the array substrate of the TFT-LCD is provided with a plurality of scan lines, a plurality of data lines, and a plurality of common electrode traces, wherein the plurality of scan lines and the plurality of data lines define a plurality of pixel units, and each of the pixel units is disposed a thin film transistor and a pixel electrode, the gate of the thin film transistor is connected to the corresponding gate line.
  • the voltage on the gate line reaches the turn-on voltage, the source and the drain of the thin film transistor are turned on, thereby inputting the data voltage on the data line to Pixel electrode.
  • TFT-LCDs in the mainstream market can be classified into three types according to the driving mode of the liquid crystal, which are Twisted Nematic (TN) or Super Twisted Nematic (STN) type. In-Plane Switching (IPS) type and Vertical Alignment (VA) type.
  • IPS Twisted Nematic
  • IPS In-Plane Switching
  • VA Vertical Alignment
  • the IPS mode uses electricity that is substantially parallel to the substrate surface.
  • the mode in which the field-driven liquid crystal molecules rotate in the plane of the substrate in response is widely concerned and applied due to excellent viewing angle characteristics and pressing characteristics.
  • the existing IPS type array substrate is designed such that the pixel electrode and the common electrode are in the same plane to form a parallel electric field, the liquid crystal above the electrode in the longitudinal direction cannot be effectively utilized.
  • the Fringe Field Switching (FFS) mode is introduced, although the liquid crystal utilization efficiency, transmittance and contrast of the display panel can be improved.
  • the production cost will increase.
  • An object of the present invention is to provide a method for fabricating an IPS type array substrate, wherein a common electrode disposed in an insulating protective layer and a pixel electrode on an upper surface of the insulating protective layer are formed by using a halftone mask, thereby making the common electrode and the pixel A longitudinal component of the electric field is generated between the electrodes, and the manufacturing method is simple.
  • the present invention provides a method for fabricating an IPS type array substrate, comprising the following steps:
  • Step 1 Providing a TFT substrate, and depositing an insulating protective layer on the TFT substrate;
  • Step 2 coating a photoresist material on the insulating protective layer, exposing and developing the photoresist layer using a half-tone mask to obtain a photoresist layer, wherein the photoresist layer has a through-resist layer a first channel exposing the insulating protective layer and a second channel not covering the insulating protective layer without penetrating the photoresist layer;
  • Step 3 using the photoresist layer as a shielding layer, etching the insulating protective layer, forming a common electrode channel on the insulating protective layer corresponding to the first channel;
  • Step 4 performing ashing treatment on the photoresist layer, thinning the photoresist layer, and causing the second channel to penetrate the photoresist layer to expose an insulating protective layer;
  • Step 5 depositing a conductive layer on the remaining photoresist layer and the insulating protective layer, peeling off the photoresist layer, removing the conductive layer on the photoresist layer and the photoresist layer, and retaining the corresponding first channel
  • a conductive layer located in the common electrode channel forms a common electrode, and a conductive layer on the upper surface of the insulating protective layer corresponding to the second channel is retained to form a pixel electrode.
  • the insulating protective layer is dry etched, and the etching gas used is a mixed gas including CF 4 , O 2 , Cl 2 , and He.
  • the photoresist material coated on the insulating protective layer is a positive photoresist material
  • the halftone mask comprises a light transmitting region, a semi-transmissive region, and a remaining light blocking region
  • the first channel is formed corresponding to the light transmissive region
  • the second channel is formed corresponding to the semi-transmissive region.
  • the insulating protective layer is deposited by chemical vapor deposition, and the insulating protective layer is made of silicon nitride, silicon oxide, or a superposed combination of silicon nitride and silicon oxide.
  • a conductive layer is deposited by physical vapor deposition, and the conductive layer is a metal material or a transparent metal oxide material.
  • the TFT substrate provided in the step 1 includes a substrate substrate, a plurality of gate scan lines disposed on the base substrate, a plurality of data lines, and an interconnection and division of the plurality of gate scan lines and the plurality of data lines. a plurality of pixel units arranged in an array;
  • Each pixel unit includes a TFT device.
  • the present invention also provides an IPS type array substrate, comprising a TFT substrate, an insulating protective layer, a common electrode, and a pixel electrode;
  • the insulating protective layer is disposed on the TFT substrate, the insulating protective layer has a common electrode channel, the common electrode is formed in the common electrode channel, and the pixel electrode is formed on the insulating protective layer On the surface.
  • the material of the insulating protective layer is silicon nitride, silicon oxide, or a superposed combination of silicon nitride and silicon oxide.
  • the common electrode and the pixel electrode are a metal material or a transparent metal oxide material.
  • the TFT substrate includes a base substrate, a plurality of gate scan lines disposed on the base substrate, a plurality of data lines, and a plurality of arrays interleaved by a plurality of gate scan lines and a plurality of data lines Arranged pixel units;
  • Each pixel unit includes a TFT device.
  • the invention also provides a method for manufacturing an IPS type array substrate, comprising the following steps:
  • Step 1 Providing a TFT substrate, and depositing an insulating protective layer on the TFT substrate;
  • Step 2 coating a photoresist material on the insulating protective layer, exposing and developing the photoresist layer using a half-tone mask to obtain a photoresist layer, wherein the photoresist layer has a through-resist layer a first channel exposing the insulating protective layer and a second channel not covering the insulating protective layer without penetrating the photoresist layer;
  • Step 3 using the photoresist layer as a shielding layer, etching the insulating protective layer, forming a common electrode channel on the insulating protective layer corresponding to the first channel;
  • Step 4 performing ashing treatment on the photoresist layer, thinning the photoresist layer, and causing the second channel to penetrate the photoresist layer to expose an insulating protective layer;
  • Step 5 depositing a conductive layer on the remaining photoresist layer and the insulating protective layer, and stripping the a photoresist layer, removing the conductive layer on the photoresist layer and the photoresist layer, and retaining a conductive layer corresponding to the first channel in the common electrode channel to form a common electrode, which is reserved corresponding to the second channel a conductive layer on an upper surface of the insulating protective layer to form a pixel electrode;
  • the insulating protective layer is dry etched, and the etching gas used is a mixed gas including CF 4 , O 2 , Cl 2 , and He;
  • the insulating protective layer is deposited by a chemical vapor deposition method, and the material of the insulating protective layer is silicon nitride, silicon oxide, or a superimposed combination of silicon nitride and silicon oxide.
  • the longitudinally staggered common electrode and the pixel electrode are simultaneously fabricated by using the halftone mask, so that the common electrode is located in the common electrode channel of the insulating protective layer, and the pixel electrode is located On the upper surface of the insulating protective layer, the obtained IPS type array substrate can generate a longitudinal component of the electric field between the common electrode and the pixel electrode compared with the conventional IPS type array substrate, so the liquid crystal above the pixel electrode in the liquid crystal panel is also Can be driven and utilized, the liquid crystal can not only rotate horizontally, but also produce a certain longitudinal tilt angle, thereby improving the utilization efficiency of the liquid crystal and the transmittance of light, compared with the FFS type array substrate which can also utilize the liquid crystal above the pixel electrode.
  • the common electrode is located in the common electrode channel of the insulating protective layer, and the pixel electrode is located on the upper surface of the insulating protective layer, so that the longitudinal component of the electric field can be generated between the common electrode and the pixel electrode, and the IPS type can be improved.
  • the liquid crystal utilization efficiency and light transmittance of the liquid crystal display panel are simple.
  • FIG. 1 is a schematic flow chart of a method for fabricating an IPS type array substrate according to the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating an IPS type array substrate according to the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating an IPS type array substrate according to the present invention
  • step 4 is a schematic diagram of step 4 of a method for fabricating an IPS type array substrate according to the present invention.
  • FIG. 5 is a schematic view showing deposition of a conductive layer in step 5 of the method for fabricating an IPS type array substrate of the present invention
  • FIG. 6 is a schematic view showing a common electrode and a pixel electrode formed in step 5 of the method for fabricating an IPS type array substrate according to the present invention; and a schematic cross-sectional structural view of the IPS type array substrate of the present invention;
  • FIG. 7 is a schematic perspective view showing the structure of an IPS type array substrate of the present invention.
  • the present invention provides a method for fabricating an IPS type array substrate, which includes the following steps:
  • Step 1 As shown in FIG. 2, a TFT substrate 10 is provided, and an insulating protective layer 15 is deposited on the TFT substrate 10.
  • the insulating protective layer 15 is deposited by a chemical vapor deposition (CVD), and the material of the insulating protective layer 15 is silicon nitride, silicon oxide, or silicon nitride and silicon oxide. Overlay combination.
  • CVD chemical vapor deposition
  • the material of the insulating protective layer 15 is silicon nitride.
  • the TFT substrate 10 is a TFT substrate of a conventional IPS type array substrate, and the specific manufacturing method is a prior art, which is not described herein.
  • the TFT substrate 10 includes a base substrate and is disposed on the base substrate. a plurality of upper gate scan lines, a plurality of data lines, and a plurality of arrays of pixel units arranged by insulating and interleaving between the plurality of gate scan lines and the plurality of data lines; each of the pixel units includes a TFT The device in which the specific structure of the TFT device is not described herein.
  • Step 2 As shown in FIG. 2, a photoresist material is coated on the insulating protective layer 15, and the photoresist layer is exposed and developed using a half-tone mask 90 to obtain a photoresist layer 60.
  • the photoresist layer 60 has a first trench 61 that penetrates the photoresist layer 60 to expose the insulating protective layer 15, and a second trench 62 that does not penetrate the photoresist layer 60 and covers the insulating protective layer 15.
  • the photoresist material coated on the insulating protective layer 15 is a positive photoresist material
  • the halftone mask 90 includes a light transmitting region 91, a semi-light transmitting region 92, and The remaining light shielding region 93 is formed corresponding to the light transmitting region 91, and the second channel 62 is formed corresponding to the semi-light transmitting region 92.
  • Step 3 as shown in FIG. 3, the insulating protective layer 15 is etched by using the photoresist layer 60 as a shielding layer, and a common electrode trench is formed on the insulating protective layer 15 corresponding to the first channel 61. Road 151.
  • the insulating protective layer 15 is dried by using a mixed gas including carbon tetrafluoride (CF 4 ), oxygen (O 2 ), chlorine (Cl 2 ), and helium (He). Etching.
  • CF 4 carbon tetrafluoride
  • O 2 oxygen
  • Cl 2 chlorine
  • He helium
  • Step 4 as shown in FIG. 4, the photoresist layer 60 is subjected to an oxygen ashing treatment to thin the photoresist layer 60 so that the second trench 62 penetrates the photoresist layer 60 to expose the insulation protection.
  • Step 5 depositing a conductive layer 20 on the remaining photoresist layer 60 and the insulating protective layer 15, stripping the photoresist layer 60, and removing the photoresist layer 60 and the conductive layer thereon.
  • the conductive layer 20 forms the pixel electrode 22.
  • the conductive layer 20 is deposited by a physical vapor deposition (PVD), and the conductive layer 20 may be a metal material or a transparent metal oxide material, wherein the transparent layer
  • the metal oxide material is one or more of indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide.
  • the material of the conductive layer 20 is indium tin oxide.
  • the longitudinally staggered common electrode 21 and the pixel electrode 22 are simultaneously formed by the halftone mask 90, so that the common electrode 21 is located in the common electrode channel 151 of the insulating protective layer 15, and the pixel electrode 22 is located on the upper surface of the insulating protective layer 15.
  • the obtained IPS type array substrate can generate a longitudinal component of the electric field between the common electrode 21 and the pixel electrode 22 compared with the conventional IPS type array substrate, so the pixels in the liquid crystal panel
  • the liquid crystal above the electrode 22 can also be driven and utilized, and the liquid crystal can not only rotate horizontally, but also generate a certain longitudinal tilt angle, thereby improving the utilization efficiency of the liquid crystal and the transmittance of light, compared with the conventional FFS type array substrate. It saves a mask and process, which saves production costs.
  • the present invention further provides an IPS type array substrate, including a TFT substrate 10, an insulating protective layer 15, a common electrode 21, and a pixel electrode 22, based on the above-described IPS type array substrate manufacturing method;
  • the insulating protective layer 15 is disposed on the TFT substrate 10, the insulating protective layer 15 has a common electrode channel 151, the common electrode 21 is formed in the common electrode channel 151, and the pixel electrode 22 is formed. On the upper surface of the insulating protective layer 15.
  • the material of the insulating protective layer 15 is silicon nitride, silicon oxide, or a superposed combination of silicon nitride and silicon oxide.
  • the material of the insulating protective layer 15 is silicon nitride.
  • the common electrode 21 and the pixel electrode 22 are made of the same conductive layer, and the material thereof is a metal material or a transparent metal oxide material, wherein the transparent metal oxide material is indium tin oxide, indium zinc oxide.
  • the transparent metal oxide material is indium tin oxide, indium zinc oxide.
  • aluminum oxide, aluminum zinc oxide, aluminum zinc oxide, and indium antimony zinc oxide are examples of aluminum oxide, aluminum zinc oxide, aluminum zinc oxide, and indium antimony zinc oxide.
  • the material of the common electrode 21 and the pixel electrode 22 is indium tin oxide.
  • the TFT substrate 10 includes a base substrate, a plurality of gate scan lines disposed on the base substrate, a plurality of data lines, and a plurality of gate scan lines and a plurality of data lines are insulated and interleaved. a plurality of pixel units arranged in an array; each pixel unit includes a TFT device;
  • the TFT substrate 10 is a TFT substrate of a conventional IPS type array substrate, which is a prior art, and the specific structure of the upper TFT device is not described herein.
  • the common electrode 21 is located in the common electrode channel 151 of the insulating protective layer 15, and the pixel electrode 22 is located on the upper surface of the insulating protective layer 15, thereby constituting the longitudinal phase between the common electrode 21 and the pixel electrode 22.
  • the staggering enables the longitudinal component of the electric field to be generated between the common electrode 21 and the pixel electrode 22, and the liquid crystal utilization efficiency and the light transmittance of the IPS liquid crystal display panel can be improved, and the manufacturing method is simple.
  • the longitudinally staggered common electrode and the pixel electrode are simultaneously fabricated by using the halftone mask, so that the common electrode is located in the common electrode channel of the insulating protective layer, and the pixel electrode is located in the insulation.
  • the obtained IPS type array substrate can generate a longitudinal component of the electric field between the common electrode and the pixel electrode as compared with the conventional IPS type array substrate, so that the liquid crystal above the pixel electrode in the liquid crystal panel can also Driven and utilized, the liquid crystal can not only rotate horizontally, but also generate a certain longitudinal tilt angle, thereby improving the utilization efficiency of the liquid crystal and the transmittance of light, compared with the FFS type array substrate which can also utilize the liquid crystal above the pixel electrode. Saves on production costs by saving a mask and process.
  • the common electrode is located in the common electrode channel of the insulating protective layer, and the pixel electrode is located on the upper surface of the insulating protective layer, so that the longitudinal component of the electric field can be generated between the common electrode and the pixel electrode, and the IPS type can be improved.
  • the liquid crystal utilization efficiency and light transmittance of the liquid crystal display panel are simple.

Abstract

一种IPS型阵列基板的制作方法及IPS型阵列基板。IPS型阵列基板的制作方法，利用一半色调掩模板(90)同时制得纵向交错的公共电极(21)与像素电极(22)，使公共电极(21)位于绝缘保护层(15)的公共电极沟道(151)内，像素电极(22)位于绝缘保护层(15)的上表面上，所得到的IPS型阵列基板与传统的IPS型阵列基板相比，公共电极(21)与像素电极(22)之间能够产生电场的纵向分量，所以在液晶面板内像素电极上方的液晶也能被驱动和利用，液晶不仅能水平转动，还能产生一定的纵向倾角，从而提高了液晶的利用效率和光线的透过率，与同样能利用像素电极上方液晶的FFS型阵列基板相比，可以节省一道光罩和制程，从而节约了生产成本。

Description

IPS型阵列基板的制作方法及IPS型阵列基板 技术领域
本发明涉及显示技术领域，尤其涉及一种IPS型阵列基板的制作方法及IPS型阵列基板。
背景技术
随着显示技术的发展，薄膜晶体管液晶显示器(Thin Film Transistor Liquid Crystal Display，TFT-LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示装置大部分为背光型液晶显示器，其包括液晶显示面板及背光模组(backlight module)。液晶显示面板的工作原理是在两片平行的玻璃基板当中放置液晶分子，两片玻璃基板中间有许多垂直和水平的细小电线，通过通电与否来控制液晶分子改变方向，将背光模组的光线折射出来产生画面。通常液晶显示面板由彩膜(CF，Color Filter)基板、阵列基板、夹于彩膜基板与阵列基板之间的液晶(LC，Liquid Crystal)及密封胶框(Sealant)组成，其成型工艺一般包括：前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(阵列基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中，前段Array制程主要是形成阵列基板，以便于控制液晶分子的运动；中段Cell制程主要是在阵列基板与CF基板之间添加液晶；后段模组组装制程主要是驱动IC压合与印刷电路板的整合，进而驱动液晶分子转动，显示图像。TFT-LCD的阵列基板上设置有数条扫描线、数条数据线、和数条公共电极走线，该数条扫描线和数条数据线限定出多个像素单元，每个像素单元内设置有薄膜晶体管和像素电极，薄膜晶体管的栅极与相应的栅线相连，当栅线上的电压达到开启电压时，薄膜晶体管的源极和漏极导通，从而将数据线上的数据电压输入至像素电极。
目前主流市场上的TFT-LCD，就液晶的驱动模式而言，可分为三种类型，分别是扭曲向列(Twisted Nematic，TN)或超扭曲向列(Super Twisted Nematic，STN)型，面内转换(In-Plane Switching，IPS)型、及垂直配向(Vertical Alignment，VA)型。其中IPS模式是利用与基板面大致平行的电 场驱动液晶分子沿基板面内转动以响应的模式，由于具有优异的视角特性和按压特性而受到广泛关注和应用。
但由于现有IPS型阵列基板将像素电极和公共电极设计为处于同一平面以形成平行电场，而在纵向上处于电极上方的液晶不能得到有效利用。为提高电极上方的液晶利用效率，在IPS模式的基础上，又推出了边缘场开关(Fringe Field Switching，FFS)模式，虽然该模式显示面板的液晶利用效率、透过率及对比度均能得到提高，但由于制作过程中需要增加光罩数，因而会增加生产成本。
发明内容
本发明的目的在于提供一种IPS型阵列基板的制作方法，利用一半色调掩模板形成位于绝缘保护层内的公共电极、及位于绝缘保护层的上表面上的像素电极，从而使得公共电极与像素电极之间产生电场的纵向分量，且制作方法简单。
本发明的目的还在于提供一种IPS型阵列基板，公共电极位于绝缘保护层的公共电极沟道内，像素电极位于绝缘保护层的上表面上，从而使得公共电极与像素电极间产生电场的纵向分量，且制作方法简单。
为实现上述目的，本发明提供一种IPS型阵列基板的制作方法，包括如下步骤：
步骤1、提供TFT基板，在所述TFT基板上沉积绝缘保护层；
步骤2、在所述绝缘保护层上涂覆一层光阻材料，使用一半色调掩模板对该层光阻材料进行曝光、显影，得到光阻层，所述光阻层具有贯穿光阻层而露出绝缘保护层的第一沟道、及不贯穿光阻层而覆盖所述绝缘保护层的第二沟道；
步骤3、以所述光阻层为遮蔽层，对所述绝缘保护层进行蚀刻，对应所述第一沟道在所述绝缘保护层上形成公共电极沟道；
步骤4、对所述光阻层进行灰化处理，减薄所述光阻层，使所述第二沟道贯穿所述光阻层而露出绝缘保护层；
步骤5、在剩余的光阻层、及绝缘保护层上沉积一层导电层，剥离所述光阻层，去除光阻层及光阻层上的导电层，保留对应所述第一沟道的位于所述公共电极沟道内的导电层，形成公共电极，保留对应所述第二沟道的位于所述绝缘保护层的上表面上的导电层，形成像素电极。
所述步骤3中，对所述绝缘保护层进行干法蚀刻，所采用的蚀刻气体为包括CF4、O2、Cl2、及He的混合气体。
所述步骤2中，在所述绝缘保护层上涂覆的光阻材料为正性光阻材料，所述半色调掩模板包括透光区、半透光区、及剩余的遮光区，所述第一沟道对应所述透光区形成，所述第二沟道对应所述半透光区形成。
所述步骤1中，通过化学气相沉积法沉积绝缘保护层，所述绝缘保护层的材料为氮化硅、氧化硅、或氮化硅与氧化硅的叠加组合。
所述步骤5中，通过物理气相沉积法沉积导电层，所述导电层为金属材料、或透明金属氧化物材料。
所述步骤1中提供的TFT基板包括衬底基板、设于衬底基板上的数条栅极扫描线、数条数据线、及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；
每一像素单元均包括一TFT器件。
本发明还提供一种IPS型阵列基板，包括TFT基板、绝缘保护层、公共电极、及像素电极；
所述绝缘保护层设于所述TFT基板上，所述绝缘保护层具有公共电极沟道，所述公共电极形成于所述公共电极沟道内，所述像素电极形成于所述绝缘保护层的上表面上。
所述绝缘保护层的材料为氮化硅、氧化硅、或氮化硅与氧化硅的叠加组合。
所述公共电极与像素电极为金属材料、或透明金属氧化物材料。
所述TFT基板包括衬底基板、设于衬底基板上的数条栅极扫描线、数条数据线、及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；
每一像素单元均包括一TFT器件。
本发明还提供一种IPS型阵列基板的制作方法，包括如下步骤：
步骤1、提供TFT基板，在所述TFT基板上沉积绝缘保护层；
步骤2、在所述绝缘保护层上涂覆一层光阻材料，使用一半色调掩模板对该层光阻材料进行曝光、显影，得到光阻层，所述光阻层具有贯穿光阻层而露出绝缘保护层的第一沟道、及不贯穿光阻层而覆盖所述绝缘保护层的第二沟道；
步骤3、以所述光阻层为遮蔽层，对所述绝缘保护层进行蚀刻，对应所述第一沟道在所述绝缘保护层上形成公共电极沟道；
步骤4、对所述光阻层进行灰化处理，减薄所述光阻层，使所述第二沟道贯穿所述光阻层而露出绝缘保护层；
步骤5、在剩余的光阻层、及绝缘保护层上沉积一层导电层，剥离所述 光阻层，去除光阻层及光阻层上的导电层，保留对应所述第一沟道的位于所述公共电极沟道内的导电层，形成公共电极，保留对应所述第二沟道的位于所述绝缘保护层的上表面上的导电层，形成像素电极；
其中，所述步骤3中，对所述绝缘保护层进行干法蚀刻，所采用的蚀刻气体为包括CF4、O2、Cl2、及He的混合气体；
其中，所述步骤1中，通过化学气相沉积法沉积绝缘保护层，所述绝缘保护层的材料为氮化硅、氧化硅、或氮化硅与氧化硅的叠加组合。
本发明的有益效果：本发明的IPS型阵列基板的制作方法，利用一半色调掩模板同时制得纵向交错的公共电极与像素电极，使公共电极位于绝缘保护层的公共电极沟道内，像素电极位于绝缘保护层的上表面上，所得到的IPS型阵列基板与传统的IPS型阵列基板相比，公共电极与像素电极之间能够产生电场的纵向分量，所以在液晶面板内像素电极上方的液晶也能被驱动和利用，液晶不仅能水平转动，还能产生一定的纵向倾角，从而提高了液晶的利用效率和光线的透过率，与同样能利用像素电极上方液晶的FFS型阵列基板相比，可以节省一道光罩和制程，从而节约了生产成本。本发明的IPS型阵列基板，公共电极位于绝缘保护层的公共电极沟道内，像素电极位于绝缘保护层的上表面上，从而使得公共电极与像素电极间能够产生电场的纵向分量，能够提高IPS型液晶显示面板的液晶利用效率和光线透过率，且制作方法简单。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的IPS型阵列基板的制作方法的示意流程图；
图2为本发明的IPS型阵列基板的制作方法的步骤2的示意图；
图3为本发明的IPS型阵列基板的制作方法的步骤3的示意图；
图4为本发明的IPS型阵列基板的制作方法的步骤4的示意图；
图5为本发明的IPS型阵列基板的制作方法的步骤5中沉积导电层的示意图
图6为本发明的IPS型阵列基板的制作方法的步骤5中形成公共电极及像素电极的示意图暨本发明的IPS型阵列基板的剖面结构示意图；
图7为本发明的IPS型阵列基板的立体结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，结合图2至图6，本发明提供一种IPS型阵列基板的制作方法，包括如下步骤：
步骤1、如图2所示，提供TFT基板10，在所述TFT基板10上沉积绝缘保护层15。
具体地，所述步骤1中，通过化学气相沉积法(Chemical Vapor Deposition，CVD)沉积绝缘保护层15，所述绝缘保护层15的材料为氮化硅、氧化硅、或氮化硅与氧化硅的叠加组合。
优选地，所述绝缘保护层15的材料为氮化硅。
具体地，所述TFT基板10为传统IPS型阵列基板的TFT基板，其具体制作方法为现有技术，在此不做描述；其中，所述TFT基板10包括衬底基板、设于衬底基板上的数条栅极扫描线、数条数据线、及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；每一像素单元均包括一TFT器件，其中TFT器件的具体结构在此不做描述。
步骤2、如图2所示，在所述绝缘保护层15上涂覆一层光阻材料，使用一半色调掩模板90对该层光阻材料进行曝光、显影，得到光阻层60，所述光阻层60具有贯穿光阻层60而露出绝缘保护层15的第一沟道61、及不贯穿光阻层60而覆盖所述绝缘保护层15的第二沟道62。
具体地，所述步骤2中，在所述绝缘保护层15上涂覆的光阻材料为正性光阻材料，所述半色调掩模板90包括透光区91、半透光区92、及剩余的遮光区93，所述第一沟道61对应所述透光区91形成，所述第二沟道62对应所述半透光区92形成。
步骤3、如图3所示，以所述光阻层60为遮蔽层，对所述绝缘保护层15进行蚀刻，对应所述第一沟道61在所述绝缘保护层15上形成公共电极沟道151。
具体地，所述步骤3中，采用包括四氟化碳(CF4)、氧气(O2)、氯气(Cl2)、及氦气(He)的混合气体对所述绝缘保护层15进行干法蚀刻。
步骤4、如图4所示，对所述光阻层60进行氧气灰化处理，减薄所述光阻层60，使所述第二沟道62贯穿所述光阻层60而露出绝缘保护层15。
步骤5、如图5-6所示，在剩余的光阻层60、及绝缘保护层15上沉积一层导电层20，剥离所述光阻层60，去除光阻层60及其上的导电层20， 保留对应所述第一沟道61的位于所述公共电极沟道151内的导电层20，形成公共电极21，保留对应所述第二沟道62的位于所述绝缘保护层15的上表面上的导电层20，形成像素电极22。
具体地，所述步骤5中，通过物理气相沉积法(Physical Vapor Deposition，PVD)沉积导电层20，所述导电层20可以为金属材料，也可以为透明金属氧化物材料，其中，所述透明金属氧化物材料为铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种。
优选地，所述导电层20的材料为铟锡氧化物。
本发明的IPS型阵列基板的制作方法，利用半色调掩模板90同时制得纵向交错的公共电极21与像素电极22，使公共电极21位于绝缘保护层15的公共电极沟道151内，像素电极22位于绝缘保护层15的上表面上，所得到的IPS型阵列基板与传统的IPS型阵列基板相比，公共电极21与像素电极22之间能够产生电场的纵向分量，所以在液晶面板内像素电极22上方的液晶也能被驱动和利用，液晶不仅能水平转动，还能产生一定的纵向倾角，从而提高了液晶的利用效率和光线的透过率，与传统的FFS型阵列基板相比，可以节省一道光罩和制程，从而节约了生产成本。
请参阅图6-7，基于上述IPS型阵列基板的制作方法，本发明还提供一种IPS型阵列基板，包括TFT基板10、绝缘保护层15、公共电极21、及像素电极22；
所述绝缘保护层15设于所述TFT基板10上，所述绝缘保护层15具有公共电极沟道151，所述公共电极21形成于所述公共电极沟道151内，所述像素电极22形成于所述绝缘保护层15的上表面上。
具体地，所述绝缘保护层15的材料为氮化硅、氧化硅、或氮化硅与氧化硅的叠加组合。
优选地，所述绝缘保护层15的材料为氮化硅。
具体地，所述公共电极21与像素电极22由同一导电层制得，其材料为金属材料、或透明金属氧化物材料，其中，所述透明金属氧化物材料为铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物中的一种或多种。
优选地，所述公共电极21与像素电极22的材料为铟锡氧化物。
具体地，所述TFT基板10包括衬底基板、设于衬底基板上的数条栅极扫描线、数条数据线、及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；每一像素单元均包括一TFT器件；所述 TFT基板10为传统IPS型阵列基板的TFT基板，为现有技术，其上TFT器件的具体结构在此不做描述。
本发明的IPS型阵列基板，公共电极21位于绝缘保护层15的公共电极沟道内151，像素电极22位于绝缘保护层15的上表面上，从而构成公共电极21与像素电极22之间的纵相交错，使得公共电极21与像素电极22之间能够产生电场的纵向分量，能够提高IPS型液晶显示面板的液晶利用效率和光线透过率，且制作方法简单。
综上所述，本发明的IPS型阵列基板的制作方法，利用一半色调掩模板同时制得纵向交错的公共电极与像素电极，使公共电极位于绝缘保护层的公共电极沟道内，像素电极位于绝缘保护层的上表面上，所得到的IPS型阵列基板与传统的IPS型阵列基板相比，公共电极与像素电极之间能够产生电场的纵向分量，所以在液晶面板内像素电极上方的液晶也能被驱动和利用，液晶不仅能水平转动，还能产生一定的纵向倾角，从而提高了液晶的利用效率和光线的透过率，与同样能利用像素电极上方液晶的FFS型阵列基板相比，可以节省一道光罩和制程，从而节约了生产成本。本发明的IPS型阵列基板，公共电极位于绝缘保护层的公共电极沟道内，像素电极位于绝缘保护层的上表面上，从而使得公共电极与像素电极间能够产生电场的纵向分量，能够提高IPS型液晶显示面板的液晶利用效率和光线透过率，且制作方法简单。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (14)

  1. 一种IPS型阵列基板的制作方法，包括如下步骤：
    步骤1、提供TFT基板，在所述TFT基板上沉积绝缘保护层；
    步骤2、在所述绝缘保护层上涂覆一层光阻材料，使用一半色调掩模板对该层光阻材料进行曝光、显影，得到光阻层，所述光阻层具有贯穿光阻层而露出绝缘保护层的第一沟道、及不贯穿光阻层而覆盖所述绝缘保护层的第二沟道；
    步骤3、以所述光阻层为遮蔽层，对所述绝缘保护层进行蚀刻，对应所述第一沟道在所述绝缘保护层上形成公共电极沟道；
    步骤4、对所述光阻层进行灰化处理，减薄所述光阻层，使所述第二沟道贯穿所述光阻层而露出绝缘保护层；
    步骤5、在剩余的光阻层、及绝缘保护层上沉积一层导电层，剥离所述光阻层，去除光阻层及光阻层上的导电层，保留对应所述第一沟道的位于所述公共电极沟道内的导电层，形成公共电极，保留对应所述第二沟道的位于所述绝缘保护层的上表面上的导电层，形成像素电极。
  2. 如权利要求1所述的IPS型阵列基板的制作方法，其中，所述步骤3中，对所述绝缘保护层进行干法蚀刻，所采用的蚀刻气体为包括CF4、O2、Cl2、及He的混合气体。
  3. 如权利要求1所述的IPS型阵列基板的制作方法，其中，所述步骤2中，在所述绝缘保护层上涂覆的光阻材料为正性光阻材料，所述半色调掩模板包括透光区、半透光区、及剩余的遮光区，所述第一沟道对应所述透光区形成，所述第二沟道对应所述半透光区形成。
  4. 如权利要求1所述的IPS型阵列基板的制作方法，其中，所述步骤1中，通过化学气相沉积法沉积绝缘保护层，所述绝缘保护层的材料为氮化硅、氧化硅、或氮化硅与氧化硅的叠加组合。
  5. 如权利要求1所述的IPS型阵列基板的制作方法，其中，所述步骤5中，通过物理气相沉积法沉积导电层，所述导电层为金属材料、或透明金属氧化物材料。
  6. 如权利要求1所述的IPS型阵列基板的制作方法，其中，所述步骤1中提供的TFT基板包括衬底基板、设于衬底基板上的数条栅极扫描线、数条数据线、及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；
    每一像素单元均包括一TFT器件。
  7. 一种IPS型阵列基板，包括TFT基板、绝缘保护层、公共电极、及像素电极；
    所述绝缘保护层设于所述TFT基板上，所述绝缘保护层具有公共电极沟道，所述公共电极形成于所述公共电极沟道内，所述像素电极形成于所述绝缘保护层的上表面上。
  8. 如权利要求7所述的IPS型阵列基板，其中，所述绝缘保护层的材料为氮化硅、氧化硅、或氮化硅与氧化硅的叠加组合。
  9. 如权利要求7所述的IPS型阵列基板，其中，所述公共电极与像素电极为金属材料、或透明金属氧化物材料。
  10. 如权利要求7所述的IPS型阵列基板，其中，所述TFT基板包括衬底基板、设于衬底基板上的数条栅极扫描线、数条数据线、及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；
    每一像素单元均包括一TFT器件。
  11. 一种IPS型阵列基板的制作方法，包括如下步骤：
    步骤1、提供TFT基板，在所述TFT基板上沉积绝缘保护层；
    步骤2、在所述绝缘保护层上涂覆一层光阻材料，使用一半色调掩模板对该层光阻材料进行曝光、显影，得到光阻层，所述光阻层具有贯穿光阻层而露出绝缘保护层的第一沟道、及不贯穿光阻层而覆盖所述绝缘保护层的第二沟道；
    步骤3、以所述光阻层为遮蔽层，对所述绝缘保护层进行蚀刻，对应所述第一沟道在所述绝缘保护层上形成公共电极沟道；
    步骤4、对所述光阻层进行灰化处理，减薄所述光阻层，使所述第二沟道贯穿所述光阻层而露出绝缘保护层；
    步骤5、在剩余的光阻层、及绝缘保护层上沉积一层导电层，剥离所述光阻层，去除光阻层及光阻层上的导电层，保留对应所述第一沟道的位于所述公共电极沟道内的导电层，形成公共电极，保留对应所述第二沟道的位于所述绝缘保护层的上表面上的导电层，形成像素电极；
    其中，所述步骤3中，对所述绝缘保护层进行干法蚀刻，所采用的蚀刻气体为包括CF4、O2、Cl2、及He的混合气体；
    其中，所述步骤1中，通过化学气相沉积法沉积绝缘保护层，所述绝缘保护层的材料为氮化硅、氧化硅、或氮化硅与氧化硅的叠加组合。
  12. 如权利要求11所述的IPS型阵列基板的制作方法，其中，所述步骤2中，在所述绝缘保护层上涂覆的光阻材料为正性光阻材料，所述半色 调掩模板包括透光区、半透光区、及剩余的遮光区，所述第一沟道对应所述透光区形成，所述第二沟道对应所述半透光区形成。
  13. 如权利要求11所述的IPS型阵列基板的制作方法，其中，所述步骤5中，通过物理气相沉积法沉积导电层，所述导电层为金属材料、或透明金属氧化物材料。
  14. 如权利要求11所述的IPS型阵列基板的制作方法，其中，所述步骤1中提供的TFT基板包括衬底基板、设于衬底基板上的数条栅极扫描线、数条数据线、及由数条栅极扫描线与数条数据线相互绝缘交错划分出的多个阵列排布的像素单元；
    每一像素单元均包括一TFT器件。
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