WO2019061737A1 - 液晶显示面板的制作方法及液晶显示面板 - Google Patents
液晶显示面板的制作方法及液晶显示面板 Download PDFInfo
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Abstract
一种液晶显示面板的制作方法及液晶显示面板。该方法利用第二金属层(6)图案化时所采用的掩膜板对第二基板(9)上的公共电极(11)进行图案化,使得公共电极(11)上形成于第二金属层(6)的图案相同的镂空区(111),从而减小第二金属层(6)与公共电极(11)之间的电容,减轻水平串扰问题,提升液晶显示面板的显示品质。
Description
本发明涉及显示技术领域,尤其涉及一种液晶显示面板的制作方法及液晶显示面板。
随着显示技术的发展,液晶显示器(Liquid Crystal Display,LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点,而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品,成为显示装置中的主流。
现有的液晶显示器大部分为背光型液晶显示器,其包括壳体、设于壳体内的液晶面板及设于壳体内的背光模组。通常液晶面板由一彩膜(Color Filter,CF)基板、一阵列基板(Thin Film Transistor Array Substrate,TFT Array Substrate)以及一填充于两基板间的液晶层(Liquid Crystal Layer)所构成,其工作原理是通过在CF基板和TFT基板上施加驱动电压来控制液晶层的液晶分子的旋转,控制光的输出量,将背光模组的光线折射出来产生画面。
通常液晶显示面板其成型工艺一般包括:前段阵列(Array)制程(薄膜、黄光、蚀刻及剥膜)、中段成盒(Cell)制程(TFT基板与CF基板贴合)及后段模组组装制程(驱动IC与印刷电路板压合)。其中,前段Array制程主要是形成TFT基板,以便于控制液晶分子的运动;中段Cell制程主要是在TFT基板与CF基板之间添加液晶;后段模组组装制程主要是驱动IC压合与印刷电路板的整合,进而驱动液晶分子转动,显示图像。
现有的液晶显示面板中画面显示时,阵列基板的数据线上的电压会与彩膜基板上的公共电极上的公共电压(CF_com)耦合,容易产生水平串扰,导致显示不良,尤其是在三栅极(Tri-gate)架构及高分辨率的液晶显示面板中,由于三栅极(Tri-gate)架构及高分辨率的液晶显示面板的馈通电压(feedthrough)更大且充电时间更短,水平串扰问题也更严重。
发明内容
本发明的目的在于提供一种液晶显示面板的制作方法,能够减少水平串扰,提升显示品质。
本发明的目的还在于提供一种液晶显示面板,能够减少水平串扰,提升显示品质。
为实现上述目的,本发明提供了一种液晶显示面板的制作方法,包括如下步骤:
步骤S1、提供第一基板,在所述第一基板上形成第一金属层及覆盖所述第一金属层及第一基板的第一绝缘层;
步骤S2、在所述第一绝缘层上沉积第二金属薄膜,通过一掩膜板对所第二金属薄膜进行图案化,得到第二金属层;
步骤S3、在所述第二金属层和第一绝缘层上沉积第二绝缘层,在所述第二绝缘层上形成像素电极;
步骤S4、提供第二基板,在所述第二基板上沉积公共电极薄膜,通过步骤S2中的掩膜板对所述公共电极薄膜进行图案化,形成公共电极,所述公共电极上形成有与所述第二金属层的图案相同的镂空区;
步骤S5、将所述第一基板与所述第二基板对组成盒,并在第一基板和第二基板之间形成液晶层,得到液晶显示面板。
所述第一金属层包括:栅极、以及与所述栅极电性连接的扫描线。
所述第二金属层包括:源极、与所述源极电性连接的数据线、以及与所述像素电极电性连接的漏极。
所述步骤S1还包括:在所述第一金属层和第一绝缘层之间形成栅极绝缘层,在所述栅极绝缘层和第一绝缘层之间形成半导体层。
所述步骤S4还包括:在所述第二基板和公共电极之间形成黑色矩阵,以及在所述公共电极形成间隙支撑物。
所述步骤S2中通过一掩膜板对所述第二金属薄膜进行图案化的过程包括:
在所述第二金属薄膜上涂布第一光阻,通过所述掩膜板对所述第一光阻进行曝光显影;
以所述第一光阻为遮挡对所述第二金属薄膜进行刻蚀;
去除所述第一光阻,得到第二金属层。
所述步骤S4中通过步骤S2中的掩膜板对所述公共电极薄膜进行图案化的过程包括:
在所述公共电极薄膜上涂布第二光阻,通过所述掩膜板对所述第二光阻进行曝光显影;
以所述第二光阻为遮挡对所述公共电极薄膜进行刻蚀;
去除所述第二光阻,得到公共电极;
所述第一光阻为正性光阻和负性光阻中的一种,所述第二光阻为正性光阻和负性光阻中不同于所述第一光阻的另一种。
本发明还提供一种液晶显示面板,包括:相对设置的第一基板和第二基板、形成于所述第一基板靠近所述第二基板的一侧的第一金属层、覆盖所述第一金属层及第一基板的第一绝缘层、形成于所述第一绝缘层上的图案化的第二金属层、覆盖所述第二金属层和第一绝缘层的第二绝缘层、形成于所述第二绝缘层上的像素电极、形成于所述第二基板靠近所述第一基板的一侧的公共电极、以及形成于所述像素电极与公共电极之间的液晶层;所述公共电极上形成有与所述第二金属层的图案相同的镂空区。
所述第一金属层包括:栅极、以及与所述栅极电性连接的扫描线;所述第二金属层包括:源极、与所述源极电性连接的数据线、以及与所述像素电极电性连接的漏极。
所述液晶显示面板还包括:形成于所述第一金属层和第一绝缘层之间的栅极绝缘层、形成于所述栅极绝缘层和第一绝缘层之间的半导体层、形成于所述第二基板和公共电极之间的黑色矩阵、以及形成于所述公共电极上的间隙支撑物。
本发明还提供一种液晶显示面板的制作方法,包括如下步骤:
步骤S1、提供第一基板,在所述第一基板上形成第一金属层及覆盖所述第一金属层及第一基板的第一绝缘层;
步骤S2、在所述第一绝缘层上沉积第二金属薄膜,通过一掩膜板对所第二金属薄膜进行图案化,得到第二金属层;
步骤S3、在所述第二金属层和第一绝缘层上沉积第二绝缘层,在所述第二绝缘层上形成像素电极;
步骤S4、提供第二基板,在所述第二基板上沉积公共电极薄膜,通过步骤S2中的掩膜板对所述公共电极薄膜进行图案化,形成公共电极,所述公共电极上形成有与所述第二金属层的图案相同的镂空区;
步骤S5、将所述第一基板与所述第二基板对组成盒,并在第一基板与第二基板之间形成液晶层,得到液晶显示面板;
其中,所述第一金属层包括:栅极、以及与所述栅极电性连接的扫描线;
其中,所述第二金属层包括:源极、与所述源极电性连接的数据线、以及与所述像素电极电性连接的漏极;
其中,所述步骤S1还包括:在所述第一金属层和第一绝缘层之间形成栅极绝缘层,在所述栅极绝缘层和第一绝缘层之间形成半导体层;
其中,所述步骤S4还包括:在所述第二基板和公共电极之间形成黑色矩阵,以及在所述公共电极上形成间隙支撑物。
本发明的有益效果:本发明提供一种液晶显示面板的制作方法,该方法利用第二金属层图案化时所采用的掩膜板对第二基板上的公共电极进行图案化,使得公共电极上形成于所述第二金属层的图案相同的镂空区,从而减小第二金属层与公共电极之间的电容,减轻水平串扰问题,提升液晶显示面板的显示品质。本发明还提供一种液晶显示面板,能够减少水平串扰,提升显示品质。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图中,
图1为本发明的液晶显示面板的剖面图;
图2为本发明的液晶显示面板的第一基板的俯视图;
图3为本发明的液晶显示面板的第二基板的俯视图;
图4为本发明的液晶显示面板的制作方法的流程图。
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图4,本发明提供一种液晶显示面板的制作方法,包括如下步骤:
步骤S1、请参阅图1和图2,提供第一基板1,在所述第一基板1上形成第一金属层2及覆盖所述第一金属层2及第一基板1的第一绝缘层5。
具体地,所述第一金属层2包括:栅极21、以及与所述栅极21电性连接的扫描线22,所述扫描线22沿水平方向延伸。
进一步地,所述步骤S1还包括:在所述第一金属层2和第一绝缘层5之间形成栅极绝缘层3、在所述栅极绝缘层3和第一绝缘层5之间形成半导体层4、以及在所述第一绝缘层5上形成两第一过孔暴露出所述半导体层4的两端,其中,所述半导体层4形成于所述栅极21的正上方,所述半导体层4可以为金属氧化物半导体、非晶硅半导体或多晶硅半导体。
优选地,所述第一金属层2的材料为钼、铝、铜、及钛中的一种或多种的组合。优选地,所述栅极绝缘层3及第一绝缘层5的材料均为氧化硅
及氮化硅中的一种或二者的组合。
步骤S2、在所述第一绝缘层5上沉积第二金属薄膜,通过一掩膜板对所第二金属薄膜进行图案化,得到第二金属层6。
具体地,所述步骤S2具体包括:在所述第二金属薄膜上涂布第一光阻,通过所述掩膜板对所述第一光阻进行曝光显影;
以所述第一光阻为遮挡对所述第二金属薄膜进行刻蚀;
去除所述第一光阻,得到第二金属层6。
进一步地,所述第二金属层6包括:源极61、与所述源极61电性连接的数据线63、以及与所述像素电极8电性连接的漏极62,源极61和漏极62分别通过两贯穿第一绝缘层5的第一过孔与所述半导体层4的两端接触。
步骤S3、在所述第二金属层6和第一绝缘层5上沉积第二绝缘层7,在所述第二绝缘层7上形成像素电极8。
具体地,所述步骤S3还包括在所述第二绝缘层7上形成贯穿所述第二绝缘层7的第二过孔,以暴露出所述漏极62,所述像素电极8通过所述第二过孔与所述漏极62接触。
优选地,所述像素电极8的材料为氧化铟锡(Indium tin oxide,ITO)。
步骤S4、请参阅图1和图3,提供第二基板9,在所述第二基板9上沉积公共电极薄膜,通过步骤S2中的掩膜板对所述公共电极薄膜进行图案化,形成公共电极11,所述公共电极11上形成有与所述第二金属层6的图案相同的镂空区111。
具体地,在所述公共电极薄膜上涂布第二光阻,通过所述掩膜板对所述第二光阻进行曝光显影;
以所述第二光阻为遮挡对所述公共电极薄膜进行刻蚀;
去除所述第二光阻,得到公共电极11;
所述第一光阻为正性光阻和负性光阻中的一种,所述第二光阻为正性光阻和负性光阻中不同于所述第一光阻的另一种。
进一步地,由于所述第一光阻和第二光阻为正负性质不同,从而所述步骤S4中采用与步骤S2相同的掩膜板进行图案化制程时,能够在所述公共电极11上形成与所述第二金属层6的图案相同的镂空区111,从而减少公共电极11和第二金属层6之间的电容。
详细地,根据所述公共电极11上电压变化公式为:
ΔU=ΔV*Cdc/Ctotal
其中,ΔV为第二金属层6上的电压变化;Cdc为第二金属层6与公共电极11之间的电容;Ctotal为公共电极11上的的总电容,据此可知,第二
金属层6与公共电极11之间的电容越小,对所述公共电极11上电压影响越小,从而本发明通过减少公共电极11和第二金属层6之间的电容,能够减少第二金属层6上电压变化对公共电极11上电压的影响,减少水平串扰,提升显示品质。
具体地,所述镂空区111对应位于所述数据线63、源极61、及漏极62的上方。
进一步地,所述步骤S4还包括:在所述第二基板9和公共电极11之间形成黑色矩阵10,以及在所述公共电极11上形成间隙支撑物12。
进一步地,所述第二基板9和公共电极11之间还设有色阻层(未图示),所述黑色矩阵10分隔所述色阻层。可以理解的是,所述色阻层也可以设置于第一基板上,即所述液晶显示面板为采用技术COA(Color-filter on Array,彩色滤光片阵列基板集成)技术的液晶显示面板,本发明对此不做限制。
步骤S5、将所述第一基板1与所述第二基板9对组成盒,并在第一基板1和第二基板9之间形成液晶层13,得到液晶显示面板。
请参阅图1至图3,本发明还提供一种液晶显示面板,包括:相对设置的第一基板1和第二基板9、形成于所述第一基板1靠近所述第二基板9的一侧的第一金属层2、覆盖所述第一金属层2及第一基板1的第一绝缘层5、形成于所述第一绝缘层5上的图案化的第二金属层6、覆盖所述第二金属层6和第一绝缘层5的第二绝缘层7、形成于所述第二绝缘层7上的像素电极8、形成于所述第二基板9靠近所述第一基板1的一侧的公共电极11、以及形成于所述像素电极8与公共电极11之间的液晶层13;所述公共电极11上形成有与所述第二金属层6的图案相同的镂空区111。
具体地,所述第一金属层2包括:栅极21、以及与所述栅极21电性连接的扫描线22;所述第二金属层6包括:源极61、与所述源极61电性连接的数据线63、以及与所述像素电极8电性连接的漏极62;
进一步地,所述液晶显示面板还包括:形成于所述第一金属层2和第一绝缘层5之间的栅极绝缘层3、形成于所述栅极绝缘层3和第一绝缘层5之间的半导体层4、形成于所述第二基板9和公共电极11之间的黑色矩阵10、以及形成于所述公共电极11上的间隙支撑物12。
详细地,根据所述公共电极11上电压变化公式为:
ΔU=ΔV*Cdc/Ctotal
其中,ΔV为第二金属层6上的电压变化;Cdc为第二金属层6与公共电极11之间的电容;Ctotal为公共电极11上的的总电容,据此可知,第二金属层6与公共电极11之间的电容越小,对所述公共电极11上电压影响
越小,从而本发明的液晶显示面板通过在公共电极11上形成有镂空区111,能够减少公共电极11和第二金属层6之间的电容,能够减少第二金属层6上电压变化对公共电极11上电压的影响,减少水平串扰,提升显示品质。
综上所述,本发明提供一种液晶显示面板的制作方法,该方法利用第二金属层图案化时所采用的掩膜板对第二基板上的公共电极进行图案化,使得公共电极上形成于所述第二金属层的图案相同的镂空区,从而减小第二金属层与公共电极之间的电容,减轻水平串扰问题,提升液晶显示面板的显示品质。本发明还提供一种液晶显示面板,能够减少水平串扰,提升显示品质。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (13)
- 一种液晶显示面板的制作方法,包括如下步骤:步骤S1、提供第一基板,在所述第一基板上形成第一金属层及覆盖所述第一金属层及第一基板的第一绝缘层;步骤S2、在所述第一绝缘层上沉积第二金属薄膜,通过一掩膜板对所第二金属薄膜进行图案化,得到第二金属层;步骤S3、在所述第二金属层和第一绝缘层上沉积第二绝缘层,在所述第二绝缘层上形成像素电极;步骤S4、提供第二基板,在所述第二基板上沉积公共电极薄膜,通过步骤S2中的掩膜板对所述公共电极薄膜进行图案化,形成公共电极,所述公共电极上形成有与所述第二金属层的图案相同的镂空区;步骤S5、将所述第一基板与所述第二基板对组成盒,并在第一基板与第二基板之间形成液晶层,得到液晶显示面板。
- 如权利要求1所述的液晶显示面板的制作方法,其中,所述第一金属层包括:栅极、以及与所述栅极电性连接的扫描线。
- 如权利要求1所述的液晶显示面板的制作方法,其中,所述第二金属层包括:源极、与所述源极电性连接的数据线、以及与所述像素电极电性连接的漏极。
- 如权利要求1所述的液晶显示面板的制作方法,其中,所述步骤S1还包括:在所述第一金属层和第一绝缘层之间形成栅极绝缘层,在所述栅极绝缘层和第一绝缘层之间形成半导体层。
- 如权利要求1所述的液晶显示面板的制作方法,其中,所述步骤S4还包括:在所述第二基板和公共电极之间形成黑色矩阵,以及在所述公共电极上形成间隙支撑物。
- 如权利要求1所述的液晶显示面板的制作方法,其中,所述步骤S2中通过一掩膜板对所述第二金属薄膜进行图案化的过程包括:在所述第二金属薄膜上涂布第一光阻,通过所述掩膜板对所述第一光阻进行曝光显影;以所述第一光阻为遮挡对所述第二金属薄膜进行刻蚀;去除所述第一光阻,得到第二金属层。
- 如权利要求6所述的液晶显示面板的制作方法,其中,所述步骤S4中通过步骤S2中的掩膜板对所述公共电极薄膜进行图案化的过程包括:在所述公共电极薄膜上涂布第二光阻,通过所述掩膜板对所述第二光阻进行曝光显影;以所述第二光阻为遮挡对所述公共电极薄膜进行刻蚀;去除所述第二光阻,得到公共电极;所述第一光阻为正性光阻和负性光阻中的一种,所述第二光阻为正性光阻和负性光阻中不同于所述第一光阻的另一种。
- 一种液晶显示面板,包括:相对设置的第一基板和第二基板、形成于所述第一基板靠近所述第二基板的一侧的第一金属层、覆盖所述第一金属层及第一基板的第一绝缘层、形成于所述第一绝缘层上的图案化的第二金属层、覆盖所述第二金属层和第一绝缘层的第二绝缘层、形成于所述第二绝缘层上的像素电极、形成于所述第二基板靠近所述第一基板的一侧的公共电极、以及形成于所述像素电极与公共电极之间的液晶层;所述公共电极上形成有与所述第二金属层的图案相同的镂空区。
- 如权利要求8所述的液晶显示面板,其中,所述第一金属层包括:栅极、以及与所述栅极电性连接的扫描线;所述第二金属层包括:源极、与所述源极电性连接的数据线、以及与所述像素电极电性连接的漏极。
- 如权利要求8所述的液晶显示面板,还包括:形成于所述第一金属层和第一绝缘层之间的栅极绝缘层、形成于所述栅极绝缘层和第一绝缘层之间的半导体层、形成于所述第二基板和公共电极之间的黑色矩阵、以及形成于所述公共电极上的间隙支撑物。
- 一种液晶显示面板的制作方法,包括如下步骤:步骤S1、提供第一基板,在所述第一基板上形成第一金属层及覆盖所述第一金属层及第一基板的第一绝缘层;步骤S2、在所述第一绝缘层上沉积第二金属薄膜,通过一掩膜板对所第二金属薄膜进行图案化,得到第二金属层;步骤S3、在所述第二金属层和第一绝缘层上沉积第二绝缘层,在所述第二绝缘层上形成像素电极;步骤S4、提供第二基板,在所述第二基板上沉积公共电极薄膜,通过步骤S2中的掩膜板对所述公共电极薄膜进行图案化,形成公共电极,所述公共电极上形成有与所述第二金属层的图案相同的镂空区;步骤S5、将所述第一基板与所述第二基板对组成盒,并在第一基板与第二基板之间形成液晶层,得到液晶显示面板;其中,所述第一金属层包括:栅极、以及与所述栅极电性连接的扫描线;其中,所述第二金属层包括:源极、与所述源极电性连接的数据线、以及与所述像素电极电性连接的漏极;其中,所述步骤S1还包括:在所述第一金属层和第一绝缘层之间形成栅极绝缘层,在所述栅极绝缘层和第一绝缘层之间形成半导体层;其中,所述步骤S4还包括:在所述第二基板和公共电极之间形成黑色矩阵,以及在所述公共电极上形成间隙支撑物。
- 如权利要求11所述的液晶显示面板的制作方法,其中,所述步骤S2中通过一掩膜板对所述第二金属薄膜进行图案化的过程包括:在所述第二金属薄膜上涂布第一光阻,通过所述掩膜板对所述第一光阻进行曝光显影;以所述第一光阻为遮挡对所述第二金属薄膜进行刻蚀;去除所述第一光阻,得到第二金属层。
- 如权利要求12所述的液晶显示面板的制作方法,其中,所述步骤S4中通过步骤S2中的掩膜板对所述公共电极薄膜进行图案化的过程包括:在所述公共电极薄膜上涂布第二光阻,通过所述掩膜板对所述第二光阻进行曝光显影;以所述第二光阻为遮挡对所述公共电极薄膜进行刻蚀;去除所述第二光阻,得到公共电极;所述第一光阻为正性光阻和负性光阻中的一种,所述第二光阻为正性光阻和负性光阻中不同于所述第一光阻的另一种。
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