CN105931991B - 电极的制备方法 - Google Patents

电极的制备方法 Download PDF

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CN105931991B
CN105931991B CN201610436577.6A CN201610436577A CN105931991B CN 105931991 B CN105931991 B CN 105931991B CN 201610436577 A CN201610436577 A CN 201610436577A CN 105931991 B CN105931991 B CN 105931991B
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electrode
buffer layer
photoresist
substrate
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CN105931991A (zh
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周志超
夏慧
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/113,432 priority patent/US9899221B2/en
Priority to PCT/CN2016/087677 priority patent/WO2017215038A1/zh
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Abstract

本发明公开一种电极的制备方法，包括：提供衬底；在所述衬底上形成缓冲层；在所述缓冲层的远离所述衬底的表面上形成图案化的光阻，所述光阻具有相对设置的底面和顶面以及连接在所述底面与所述顶面之间的侧面，所述底面贴合所述缓冲层；通过干蚀刻，将所述缓冲层的未被所述光阻覆盖的部分去除，以形成容纳区；沉积导电膜层，所述导电膜层包括形成在所述顶面上的废料和填充于所述容纳区的电极；以及剥离所述废料和所述光阻。本发明所述电极的制备方法的良品率高。

Description

电极的制备方法
技术领域
本发明涉及阵列基板制备技术领域，尤其涉及一种电极的制备方法。
背景技术
在液晶显示面板工业中，目前液晶显示面板的阵列基板中的电极通常采用湿蚀刻(wet etching)工艺进行图案化。然而，湿蚀刻工艺很难准确调整电极的Taper Angle(也即电极斜边与底边的夹角)和CD Loss(关键尺寸损失)，进而导致阵列基板的电极的良品率低。
发明内容
本发明所要解决的技术问题在于提供一种良品率高的电极的制备方法，可用于制备阵列基板的电极。
为了实现上述目的，本发明实施方式采用如下技术方案：
提供一种电极的制备方法，包括：
提供衬底；
在所述衬底上形成缓冲层；
在所述缓冲层的远离所述衬底的表面上形成图案化的光阻，所述光阻具有相对设置的底面和顶面以及连接在所述底面与所述顶面之间的侧面，所述底面贴合所述缓冲层；
通过干蚀刻，将所述缓冲层的未被所述光阻覆盖的部分去除，以形成容纳区；
沉积导电膜层，所述导电膜层包括形成在所述顶面上的废料和填充于所述容纳区的电极；以及
剥离所述废料和所述光阻。
其中，所述缓冲层具有第一厚度T1，所述光阻的所述侧面与所述底面之间形成角度α，所述侧面在垂直于所述底面的方向上具有第二厚度T2，满足：75°≤α≤90°和T2≥2T1，以使所述废料与所述电极之间相隔断。
其中，所述“通过干蚀刻，将所述缓冲层的未被所述光阻覆盖的部分去除，以形成容纳区”包括：
通过蚀刻气体冲击所述缓冲层，将所述缓冲层的未被所述光阻覆盖的部分去除，以形成容纳区；
同时，通过蚀刻气体冲击所述顶面，以使所述顶面凹凸不平；
所述蚀刻气体包括四氟化碳气体、氧气以及氩气，或者所述蚀刻气体包括六氟化硫、氧气以及氩气。
其中，所述蚀刻气体内的所述四氟化碳气体、所述氧气以及所述氩气的体积流量的比的范围为4:1:1至4:8:1。
其中，所述四氟化碳气体的体积流量为400sccm，所述氧气的体积流量为400sccm，所述氩气的体积流量为100sccm。
其中，所述“剥离所述废料和所述光阻”包括：
通过气液二流体冲洗所述废料，以将所述废料自所述光阻上剥离；
自所述缓冲层上剥离所述光阻。
其中，所述衬底为有机基板、玻璃基板、有机膜层或者无机膜层。
其中，所述“在所述衬底上形成缓冲层”包括：
通过化学气相沉积工艺，在所述衬底上沉积氧化硅和/或氮化硅和/或氧化铝，以形成缓冲层。
其中，所述电极包括层叠设置的第一层和第二层，所述第一层贴合所述衬底，所述第一层包括钼元素和/或钛元素和/或铌元素，所述第二层包括铜元素。
其中，所述电极为栅极、源漏极、像素电极、栅极线或者数据线。
相较于现有技术，本发明具有以下有益效果：
本发明实施例所述电极的制备方法，由于采用干蚀刻工艺形成所述容纳区，干蚀刻工艺的蚀刻方向性强，工艺控制精确，因此可以准确地控制所述容纳区的外轮廓形状，也即可以准确控制填充于所述容纳区内的所述电极的形状，例如所述电极的Taper Angle和CD Loss，使得所述电极的良品率高。当然，相对于现有技术中的湿蚀刻(wet etching)工艺，干蚀刻工艺无需使用昂贵的蚀刻溶液(例如铜酸溶液)，使得所述电极的生产成本低。
同时，由于所述电极填充于所述容纳区内，也即所述电极埋入所述缓冲层，因此所述电极的侧边能够得到很好的保护，得以降低所述电极被氧化的风险，进一步提高所述电极的良品率。
再者，所述电极的所述Taper Angle为垂直角或接近于垂直角，并非尖角，故而能减小所述电极发生尖端放电的风险，进一步提高所述电极的良品率。
附图说明
为了更清楚地说明本发明的技术方案，下面将对实施方式中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以如这些附图获得其他的附图。
图1～图6是本发明实施例提供的一种电极的制备方法中各个步骤对应的结构示意图。
图7是图5中A处结构的放大示意图。
图8是本发明实施例提供的一种电极的制备方法中步骤Step4对应的另一结构示意图。
图9是本发明实施例提供的一种电极的制备方法中步骤Step5对应的另一结构示意图。
图10是图6中B处结构的放大示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
此外，以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“设置在……上”应做广义理解，例如，可以是固定连接，也可以是可拆卸地连接，或者一体地连接；可以是机械连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
此外，在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。若本说明书中出现“工序”的用语，其不仅是指独立的工序，在与其它工序无法明确区别时，只要能实现该工序所预期的作用则也包括在本用语中。另外，本说明书中用“～”表示的数值范围是指将“～”前后记载的数值分别作为最小值及最大值包括在内的范围。在附图中，结构相似或相同的单元用相同的标号表示。
请一并参阅图1至图7，本发明实施例提供一种电极的制备方法，可用于制备阵列基板上的多种电极1。所述电极的制备方法包括：
Step1：提供衬底2；
Step2：在所述衬底2上形成缓冲层3；
Step3：在所述缓冲层3的远离所述衬底2的表面上形成图案化的光阻4，所述光阻4具有相对设置的底面41和顶面42以及连接在所述底面41与所述顶面42之间的侧面43，所述底面41贴合所述缓冲层3；
Step4：通过干蚀刻(dry etching)，将所述缓冲层3的未被所述光阻4覆盖的部分去除，以形成容纳区10；
Step5：沉积导电膜层5，所述导电膜层5包括形成在所述顶面42上的废料51和填充于所述容纳区10的电极1；以及
Step6：剥离所述废料51和所述光阻4。
在本实施例中，由于在步骤Step4中采用干蚀刻工艺形成所述容纳区10，干蚀刻工艺的蚀刻方向性强，工艺控制精确，因此可以准确地控制所述容纳区10的外轮廓形状，也即可以准确控制填充于所述容纳区10内的所述电极1的形状，例如所述电极1的Taper Angle(也即所述电极1斜边与底边的夹角β)和CD Loss(关键尺寸损失)，使得所述电极1的良品率高。当然，相对于现有技术中的湿蚀刻(wet etching)工艺，干蚀刻工艺无需使用昂贵的蚀刻溶液(例如铜酸溶液)，使得所述电极1的生产成本低。
同时，由于所述电极1填充于所述容纳区10内，也即所述电极1埋入所述缓冲层3，因此所述电极1的侧边能够得到很好的保护，得以降低所述电极1被氧化的风险，进一步提高所述电极1的良品率。
再者，如图7所示，所述电极1的所述夹角β为垂直角或接近于垂直角，并非尖角，故而能减小所述电极1发生尖端放电的风险，进一步提高所述电极1的良品率。
进一步地，作为一种可选实施例，在步骤Step1中，所述衬底2可以为有机基板、玻璃基板、有机膜层或者无机膜层等，也即所述电极1和所述缓冲层3可以形成在阵列基板的基板上，也可以形成在阵列基板的其他膜层上，可以依据所述电极1的结构、功能需求进行灵活设计。
进一步地，请一并参阅图2、图5以及图7，作为一种可选实施例，在步骤Step2中，所述“在所述衬底2上形成缓冲层3”包括：
通过化学气相沉积(Chemical Vapor Deposition，CVD)工艺，在所述衬底2上沉积氧化硅(SiOx)和/或氮化硅(SiNx)和/或氧化铝(Al2O3)，以形成缓冲层3。
如图5和图7所示，所述缓冲层3具有第一厚度T1。优选的，所述第一厚度T1满足：
进一步地，请参阅图3，作为一种可选实施例，在步骤Step3中，可以通过涂膜、曝光、显影、后烘烤等工艺，在所述缓冲层3的远离所述衬底2的表面上形成图案化的光阻4。
进一步地，请一并参阅图3、图5以及图7，作为一种优选实施例，在步骤Step3中，所述光阻4的所述侧面43与所述底面41之间形成角度α，所述侧面43在垂直于所述底面41的方向上具有第二厚度T2，满足：75°≤α≤90°，T2≥2T1，以使所述废料51与所述电极1之间相隔断。
换言之，由于所述光阻4具有高且陡的所述侧面43(满足75°≤α≤90°和T2≥2T1)，因此在所述导电膜层5的沉积过程中(步骤Step5)，同时沉积的所述电极1与所述废料51会自然地相隔断。
可以理解的，由于所述废料51与所述电极1之间相隔断，因此所述电极1的表面在所述废料51的剥离工艺中不会被损伤，所述电极1的表面具有极高的平整度，从而在阵列基板的后续工艺中，可以极大地减小栅极绝缘层(Gate Insulator，GI)和钝化层(Passivation，PV)爬坡短线的风险。
进一步地，请一并参阅图8和图9，作为一种可选实施例，在步骤Step4中，所述“通过干蚀刻，将所述缓冲层3的未被所述光阻4覆盖的部分去除，以形成容纳区10”包括：
通过蚀刻气体冲击所述缓冲层3，将所述缓冲层3的未被所述光阻4覆盖的部分去除，以形成容纳区10；
同时，通过蚀刻气体冲击所述顶面42(也即所述蚀刻气体同时冲击所述缓冲层3和所述顶面42)，以使所述顶面42凹凸不平；
所述蚀刻气体包括四氟化碳气体、氧气以及氩气，或者所述蚀刻气体包括六氟化硫、氧气以及氩气。
在本实施例中，通过控制所述蚀刻气体的各种气体流量和流量比，所述蚀刻气体在冲击所述顶面42后，所述氧气和所述氩气(也可以是其他惰性气体)对所述顶面42的轰击，使得所述顶面42凹凸不平，十分粗燥，进而有利于降低在后续工艺中剥离所述废料51的难度。
优选的，为了保证所述氧气和所述氩气对所述顶面42的轰击效果，可以适当增加所述氧气和所述氩气的流量，所述蚀刻气体内的所述四氟化碳气体、所述氧气以及所述氩气的体积流量的比的范围可以为4:1:1至4:8:1。
举例而言，所述四氟化碳气体的体积流量为400sccm(标况毫升每分)，所述氧气的体积流量为400sccm(标况毫升每分)，所述氩气的体积流量为100sccm(标况毫升每分)。
进一步地，请一并参阅图8、图9以及图6，作为一种可选实施例，在步骤Step6中，所述“剥离所述废料51和所述光阻4”包括：
通过气液二流体冲洗所述废料51，以将所述废料51自所述光阻4上剥离；
自所述缓冲层3上剥离所述光阻4。
在本实施例中，由于所述顶面42凹凸不平，十分粗燥，因此可以很容易地通过气液二流体的冲洗，将所述废料51自所述光阻4上剥离，从而改善了所述废料51的剥离工艺，避免大量所述导电膜(例如铜膜)残留在剥离槽之中，影响后续的剥离工艺。
应当理解的，作为另一种可选实施例，请一并参阅图4至图6，当所述顶面42较为光滑时，也可以采用剥离工艺剥离所述废料51。
进一步地，请一并参阅图5、图6以及图10，作为一种可选实施例，在步骤Step5中，可以通过物理气相沉积(Physical Vapor Deposition，PVD)工艺沉积所述导电膜层5。包括但不限于真空蒸发、溅射镀膜以及离子镀膜等。
优选的，所述电极1包括层叠设置的第一层11和第二层12，所述第一层11贴合所述衬底2。所述第一层11包括钼元素和/或钛元素和/或铌元素，也即所述第一层11可以为钼金属、钛金属、铌金属、钼钛合金或钼铌合金。所述第二层12包括铜元素，也即所述第二层12为铜膜层。所述第一层11可用于提升所述第二层12的附着力。
进一步地，作为一种可选实施例，所述电极1可以作为阵列基板的栅极、源漏极、像素电极、栅极线或数据线。也即，所述电极的制备方法可用于制备阵列基板的栅极、源漏极、像素电极、栅极线或数据线。可以理解的，所述电极1也可用作阵列基板的其他导电层。
本发明实施例还提供一种阵列基板，包括电极，所述电极由如上任一实施例所述的电极的制备方法制成。
本发明实施例还提供一种液晶显示面板，包括如上实施例所述的阵列基板。所述液晶显示面板可用于多种显示装置中，所述显示装置包括但不限于手机、笔记本、平板电脑、POS机、车载电脑、相机等。
以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (9)

1.一种电极的制备方法，其特征在于，包括：
提供衬底；
在所述衬底上形成缓冲层；
在所述缓冲层的远离所述衬底的表面上形成图案化的光阻，所述光阻具有相对设置的底面和顶面以及连接在所述底面与所述顶面之间的侧面，所述底面贴合所述缓冲层；
通过干蚀刻，将所述缓冲层的未被所述光阻覆盖的部分去除，以形成容纳区；
沉积导电膜层，所述导电膜层包括形成在所述顶面上的废料和填充于所述容纳区的电极；以及
剥离所述废料和所述光阻；
其中，所述“通过干蚀刻，将所述缓冲层的未被所述光阻覆盖的部分去除，以形成容纳区”包括：
通过蚀刻气体冲击所述缓冲层，将所述缓冲层的未被所述光阻覆盖的部分去除，以形成容纳区；
同时，通过蚀刻气体冲击所述顶面，以使所述顶面凹凸不平；
所述蚀刻气体包括四氟化碳气体、氧气以及氩气，或者所述蚀刻气体包括六氟化硫、氧气以及氩气。
2.如权利要求1所述的电极的制备方法，其特征在于，所述缓冲层具有第一厚度T1，所述光阻的所述侧面与所述底面之间形成角度α，所述侧面在垂直于所述底面的方向上具有第二厚度T2，满足：75°≤α≤90°和T2≥2T1，以使所述废料与所述电极之间相隔断。
3.如权利要求2所述的电极的制备方法，其特征在于，所述蚀刻气体内的所述四氟化碳气体、所述氧气以及所述氩气的体积流量的比的范围为4:1:1至4:8:1。
4.如权利要求3所述的电极的制备方法，其特征在于，所述四氟化碳气体的体积流量为400sccm，所述氧气的体积流量为400sccm，所述氩气的体积流量为100sccm。
5.如权利要求2所述的电极的制备方法，其特征在于，所述“剥离所述废料和所述光阻”包括：
通过气液二流体冲洗所述废料，以将所述废料自所述光阻上剥离；
自所述缓冲层上剥离所述光阻。
6.如权利要求1所述的电极的制备方法，其特征在于，所述衬底为有机基板、玻璃基板、有机膜层或者无机膜层。
7.如权利要求1所述的电极的制备方法，其特征在于，所述“在所述衬底上形成缓冲层”包括：
通过化学气相沉积工艺，在所述衬底上沉积氧化硅和/或氮化硅和/或氧化铝，以形成缓冲层。
8.如权利要求1所述的电极的制备方法，其特征在于，所述电极包括层叠设置的第一层和第二层，所述第一层贴合所述衬底，所述第一层包括钼元素和/或钛元素和/或铌元素，所述第二层包括铜元素。
9.如权利要求1所述的电极的制备方法，其特征在于，所述电极为栅极、源漏极、像素电极、栅极线或者数据线。
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