WO2017221770A1 - 半導体装置用銅合金ボンディングワイヤ - Google Patents
半導体装置用銅合金ボンディングワイヤ Download PDFInfo
- Publication number
- WO2017221770A1 WO2017221770A1 PCT/JP2017/021825 JP2017021825W WO2017221770A1 WO 2017221770 A1 WO2017221770 A1 WO 2017221770A1 JP 2017021825 W JP2017021825 W JP 2017021825W WO 2017221770 A1 WO2017221770 A1 WO 2017221770A1
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- Prior art keywords
- wire
- bonding
- mass
- bonding wire
- copper alloy
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
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- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
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- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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Definitions
- the present invention relates to a copper alloy bonding wire for a semiconductor device used for connecting an electrode on a semiconductor element and wiring of a circuit wiring board such as an external lead.
- bonding wires fine wires having a wire diameter of about 15 to 50 ⁇ m are mainly used as bonding wires for semiconductor devices (hereinafter referred to as “bonding wires”) for bonding between electrodes on semiconductor elements and external leads.
- bonding wires As a method for bonding a bonding wire to an electrode of a semiconductor device, a thermocompression bonding method using ultrasonic waves is generally used, and a general-purpose bonding device, a capillary jig used for connection through the bonding wire, or the like is used.
- the bonding process of the bonding wire involves heating and melting the wire tip with arc heat input, forming a ball (FAB: Free Air Ball) by surface tension, and then heating it on the electrode of the semiconductor element heated within the range of 150 to 300 ° C.
- FAB Free Air Ball
- This ball part is bonded by pressure bonding (hereinafter referred to as “ball bonding”), then a loop is formed, and then the wire part is bonded by pressure bonding (hereinafter referred to as “wedge bonding”) to the electrode on the external lead side.
- the electrode on the semiconductor element that is the bonding partner of the bonding wire has an electrode structure in which an alloy mainly composed of Al is formed on a Si substrate, and the electrode on the external lead side has an electrode structure in which Ag plating or Pd plating is applied. Used.
- a copper bonding wire that uses high-purity Cu (purity: 99.99 mass% or more) has been proposed (for example, Patent Document 1). Even when a copper bonding wire is used, it is required that bonding reliability and loop stability be high in high-density mounting.
- the joint reliability evaluation is performed for the purpose of evaluating the joint life in the actual use environment of the semiconductor device. In general, a high temperature standing test and a high temperature and high humidity test are used for evaluating the bonding reliability. In the high-temperature and high-humidity test, a test called PCT (Pressure Cooker Test) that is performed under conditions of a temperature of 121 ° C. and a relative humidity of 100% is generally used.
- PCT Pressure Cooker Test
- Patent Document 2 describes a copper alloy bonding wire for a semiconductor made of a copper alloy containing Pd in a concentration range of 0.13 to 1.15% by mass. By adding Pd in the concentration range, high humidity heating reliability by the PCT test can be improved.
- In-vehicle devices are required to have higher bonding reliability in harsh high-temperature and high-humidity environments than general electronic equipment.
- the bonding life of the ball bonding portion in which the ball portion of the wire is bonded to the electrode becomes the biggest problem.
- Several methods have been proposed for evaluating the bonding reliability in a high-temperature and high-humidity environment. Recently, as a representative evaluation method, HAST (Highly Accelerated Temperature and Humidity Stress Test) (exposure to high-temperature and high-humidity environment) Test) is used.
- HAST Highly Accelerated Temperature and Humidity Stress Test
- HAST Exposure to high-temperature and high-humidity environment
- the evaluation ball joint When evaluating the bonding reliability of a ball joint by HAST, the evaluation ball joint is exposed to a high-temperature and high-humidity environment at a temperature of 130 ° C. and a relative humidity of 85%, and the change in resistance value of the joint is measured over time. Or by measuring the change in shear strength of the ball joint with time, the joint life of the ball joint is evaluated. Further, by applying a bias voltage, stricter evaluation than PCT can be performed. Recently, in HAST under such conditions, a bonding life of 100 hours or more has been required.
- An object of the present invention is to provide a bonding wire for a semiconductor device suitable for a vehicle-mounted device by improving the bonding reliability of a ball bonding portion in a high-temperature and high-humidity environment.
- the present invention has found an optimum additive element and an optimum addition concentration thereof for a copper alloy bonding wire having sufficient joining reliability even in HAST to which a bias voltage is applied, which is a stricter evaluation method. Is.
- the gist of the present invention is as follows. (1) Contains at least one element selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt in a total amount of 0.03% by mass to 3% by mass, with the balance being Cu and inevitable impurities. A copper alloy bonding wire for a semiconductor device. (2) When the average crystal grain size ( ⁇ m) in the cross section of the core material perpendicular to the wire axis of the copper alloy bonding wire is R ( ⁇ m), 0.02 ⁇ R + 0.4 or more (1a) 0.1 ⁇ R + 0.5 or less (1b) (4) The copper alloy bonding wire for semiconductor devices according to (1).
- the copper alloy bonding wire further contains at least one element selected from Ti, B, P, Mg, Ca, La, As, Te, and Se in an amount of 0.0001-0.
- the copper alloy bonding wire further contains at least one element selected from Ag and Au in a total amount of 0.0005 to 0.5 mass% with respect to the entire wire (1)
- a total of at least one element selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt in a copper alloy bonding wire for a semiconductor device is 0.03% by mass or more and 3% by mass. % Or less, it is possible to improve the bonding life of the ball bonded portion in a high temperature and high humidity environment and improve the bonding reliability.
- the copper alloy bonding wire for semiconductor devices of the present invention (hereinafter also simply referred to as “bonding wire”) is at least one element selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt (“ A total of 0.03% by mass or more and 3% by mass or less, and the balance is formed by drawing a copper alloy composed of Cu and inevitable impurities. Since the bonding wire of the present invention is an alloy mainly composed of copper, it is also referred to as a “copper alloy bonding wire”.
- the copper alloy bonding wire for a semiconductor device of the present invention is a bonding wire that does not have a coating layer mainly composed of a metal other than copper, and is also referred to as a “bare Cu alloy wire”.
- the bonding wire of the present invention can improve the bonding reliability of the ball bonding portion in a high-temperature and high-humidity environment required for a vehicle-mounted device.
- Mold resin which is a package of a semiconductor device contains chlorine (Cl) in a molecular skeleton.
- Cl chlorine
- the HAST evaluation conditions are 130 ° C. and the relative humidity is 85%
- Cl in the molecular skeleton is hydrolyzed and eluted as chloride ions (Cl ⁇ ).
- Cu 9 Al 4 is easily corroded by halogens such as Cl, and corrosion progresses due to Cl eluted from the mold resin, leading to a decrease in bonding reliability. For this reason, the conventional copper alloy bonding wire does not have a sufficient ball joint life in HAST evaluation.
- the copper alloy bonding wire contains the first element (at least one element selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt) in a total amount of 0.03. Containing at least mass% improves the ball joint life in HAST evaluation for the ball joint using the copper alloy bonding wire.
- the first element or 0.03 mass% in the total generation of Cu 9 Al 4 intermetallic compound is believed to tend to be suppressed at the junction.
- the first element present at the interface between Cu and Al in the ball joint enhances the interdiffusion suppression effect of Cu and Al, and as a result, suppresses the formation of Cu 9 Al 4 which is easily corroded in a high temperature and high humidity environment. I think that the.
- the first element contained in the wire may have an effect of directly inhibiting the formation of Cu 9 Al 4 .
- the role of the first element in the vicinity of the bonding interface may be a barrier function that inhibits halogen migration that induces corrosion, a function that controls interdiffusion of Cu and Al, growth of intermetallic compounds, and the like.
- a ball part was formed using a copper alloy bonding wire containing a predetermined amount of the first element, and when the FAB was observed with a scanning electron microscope (SEM), the surface of the FAB had a diameter of several tens of nm. Many precipitates of a degree were observed.
- EDS Energy Dispersive X-ray Spectroscopy
- the first element was concentrated.
- this precipitate observed in the FAB is present at the bonding interface between the ball part and the electrode, so that the temperature is 130 ° C. and the relative humidity is 85%. It seems that the joint reliability of the ball joint in a wet environment has been greatly improved.
- the bonding wire of the present invention has obtained a good result in the HAST evaluation which is a stricter condition than the PCT evaluation, a good result can be obtained in the PCT evaluation.
- the content of the first element in the wire (“concentration” from the viewpoint of improving the bonding life of the ball bonded portion in a high temperature and high humidity environment with a temperature of 130 ° C. and a relative humidity of 85% and improving bonding reliability. Is also 0.03% by mass or more in total, preferably 0.050% by mass or more, more preferably 0.070% by mass or more, further preferably 0.090% by mass or more, 0.100% by mass. Above, it is 0.150 mass% or more, or 0.200 mass% or more. When the concentration of the first element in the wire is 0.100% by mass or more in total, it is possible to meet demands for more stringent bonding reliability.
- the concentration of the first element in the wire is 3% by mass or less in total from the viewpoint of obtaining a good FAB shape and obtaining good wedge bondability by suppressing the hardening of the bonding wire, preferably 2 It is 0.5 mass% or less, More preferably, it is 2.0 mass% or less, More preferably, it is 1.9 mass% or less, or 1.5 mass% or less.
- the initial bonding strength with the Al electrode in the low temperature bonding is good, the long-term reliability in the HAST test, and the BGA (Ball Grid) Good results can also be obtained from the viewpoint of obtaining bonding wires excellent in mass production margin for bonding to substrates such as Array) and CSP (Chip Size Package), tapes, etc., and reducing chip damage.
- the content of the first element exceeds 3.0% by mass, it is necessary to perform ball bonding with a low load so as not to cause chip damage, and the initial bonding strength with the electrode is lowered, resulting in a HAST test. Reliability may deteriorate.
- the reliability in the HAST test is further improved by setting the total content (concentration) of the first element within the above-mentioned preferable range. For example, it is possible to realize a bonding wire that has a lifetime of more than 250 hours until failure of the HAST test. This may correspond to a life extension of 1.5 times or more that of a conventional Cu bonding wire, and can be used in harsh environments.
- the Cu alloy bonding wire for a semiconductor device of the present invention is: It is preferable to contain two or more elements (first elements) selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt.
- first elements selected from Ni, Zn, Ga, Ge, Rh, In, Ir, and Pt.
- combinations of the first elements include Ni and Zn, Ni and Ga, Ni and Ge, Ni and In, Pt and Zn, Pt and Ga, Pt and Ge, Pt and In, Ir and Zn, and Ir.
- ⁇ Average particle diameter of bonding wire The effect of the crystal grain size in the bonding wire on the wire quality was evaluated. As a result, there is a preferred range for the average crystal grain size in the cross section of the core material perpendicular to the wire axis of the bonding wire, and when the average crystal grain size ( ⁇ m) is the wire diameter R ( ⁇ m), 0.02 ⁇ R + 0.4 or more (1a) 0.1 ⁇ R + 0.5 or less (1b) , It has been found that the collapsed shape of the ball joint and the wedge bondability are particularly good.
- the particle size measurement can be obtained by using the analysis software provided in the apparatus for the measurement result by the EBSD method.
- the crystal grain size defined in the present invention is an arithmetic average of the equivalent diameters of the crystal grains included in the measurement region (the diameter of a circle corresponding to the area of the crystal grains).
- the average copper oxide film thickness on the wire surface is preferably in the range of 0.0005 to 0.02 ⁇ m.
- HAST The effect of stably improving reliability at the mass production level can be further enhanced.
- the HAST reliability improvement effect of the ball bonding portion of the bonding wire made of the copper alloy containing the first element varies, and after the HAST heating There is a tendency that the bonding strength or the like becomes unstable. This variation in HAST reliability may be more problematic for bonding wires having a wire diameter of 20 ⁇ m or less. Although there are still unclear points about the factors that cause the HAST reliability to become unstable due to the copper oxide on the surface of the copper alloy containing the first element, in the longitudinal direction of the copper alloy bonding wire or in the depth direction from the wire surface.
- the concentration distribution of the first element is not uniform, or that the intruding oxygen or residual oxide inside the ball may hinder the HAST reliability improvement effect of the first element.
- the copper alloy bonding wire containing the first element According to the copper alloy bonding wire containing the first element, the effect of delaying the surface oxidation can be obtained, so that the average film thickness of the copper oxide can be easily controlled to 0.0005 to 0.02 ⁇ m which is a thin range. .
- the copper alloy bonding wire containing the first element in a concentration range of 0.03 to 3% by mass in total, the copper oxide film on the surface of the wire in a low temperature range of about 20 to 40 ° C. compared to high purity copper. It was also confirmed that it has the effect of delaying growth.
- the improvement effect of the HAST evaluation is likely to vary. For example, when the number of junctions to be evaluated is increased, the improvement effect varies. Since the possibility of becoming unstable increases, the upper limit of the average film thickness of the copper oxide on the wire surface is preferably 0.02 ⁇ m.
- the average film thickness of copper oxide on the wire surface is preferably 0.02 ⁇ m or less, more preferably 0.015 ⁇ m or less, and still more preferably 0.013 ⁇ m or less from the viewpoint that variation in the improvement effect can be reduced.
- special surface treatment and product management are necessary to stably keep the average film thickness of copper oxide on the wire surface below 0.0005 ⁇ m.
- the lower limit of the average film thickness of the copper oxide on the wire surface is preferably 0.0005 ⁇ m.
- the coating film of the rust preventive agent on the wire surface is thickened, there is a problem that the bonding strength is lowered and the continuous bonding property is lowered.
- the guaranteed life of wire products stored in the atmosphere is extremely shortened for the purpose of keeping the average film thickness of copper oxide below 0.0005 ⁇ m, operations in the mass production process of wire bonding will become difficult and scrap problems will occur. In some cases, it may not be industrially acceptable.
- the average film thickness of the copper oxide on the wire surface is preferably 0.0005 ⁇ m or more, more preferably 0.0008 ⁇ m or more, and even more preferably 0.001 ⁇ m or more from the viewpoint that an industrially suitable bonding wire can be provided. .
- Auger spectroscopic analysis suitable for surface analysis is effective, and it is possible to measure at least 3 random locations on the wire surface, and more preferably 5 or more locations. It is desirable to use the average value of the copper oxide film thickness.
- As the oxygen concentration a ratio of the O concentration to the total concentration of Cu, O, and metal elements is used. In order to exclude organic substances that are typical contamination of the wire surface, the amount of C is not included in the above concentration calculation. Since it is difficult to obtain the absolute value of the copper oxide film thickness with high accuracy, it is desirable to calculate the copper oxide film thickness using a SiO 2 equivalent value generally used in Auger spectroscopy.
- the oxygen concentration is 30% by mass as the boundary between copper oxide and metallic copper.
- Cu 2 O and CuO are known as main copper oxides, but Cu 2 O may be preferentially formed on the surface of the copper alloy containing the first element at a low temperature (25 to 500 ° C.). Since there are many, oxygen concentration makes 30 mass% a boundary.
- the bonding wire of the present invention further contains at least one element selected from Ti, B, P, Mg, Ca, La, As, Te, Se (also referred to as “second element”) with respect to the entire wire.
- Each content is preferably 0.0001 to 0.050% by mass.
- the content (concentration) of the second element is preferably 0.0001% by mass or more in total, more preferably 0.0002% by mass or more from the viewpoint of improving the effect of rounding the crimped shape of the ball joint.
- the content of the second element is preferably 0.050% by mass or less, more preferably 0.045% by mass or less, and 0 0.040 mass% or less is more preferable. Moreover, it is more preferable to contain 0.0005% by mass or more of each of the second elements because an effect of reducing the occurrence of defects in the wedge joint can be obtained.
- the bonding wire of the present invention preferably further contains 0.0005 to 0.5% by mass in total of at least one element selected from Ag and Au (also referred to as “third element”).
- the deformed shape of the ball joint is important, and it is required to make a round shape by suppressing irregular shapes such as petals and eccentricity.
- the third element in combination with the first element, the ball deformation can be easily made isotropic, and the effect of rounding the crimped shape can be enhanced. As a result, it was confirmed that it can be sufficiently adapted to a narrow pitch connection of 50 ⁇ m or less. This effect is more effectively exhibited when the third element content is 0.0005 mass or more in total.
- the content of the third element is preferably 0.0005% by mass or more in total, more preferably 0.0007% by mass or more, from the viewpoint that the effect of rounding the crimped shape of the ball joint can be improved. More preferred is 0.001% by mass or more. Further, from the viewpoint of obtaining a good FAB shape, the content of the third element is preferably 0.5% by mass or less, more preferably 0.4% by mass or less, and further preferably 0.3% by mass or less. On the other hand, when the content of the third element exceeds 0.5 mass% in total, the FAB shape may be deteriorated.
- the bonding wire of the present invention may contain a third element together with the second element, or may contain a third element instead of the second element.
- the bonding wire of the present invention preferably further contains Pd in a range of 1.15% by mass or less.
- Pd diffuses or concentrates up to the bonding interface and affects the mutual diffusion between Cu and Al, thereby growing Cu- This is thought to delay the corrosion reaction of Al-based intermetallic compounds.
- the content of Pd is preferably 1.15% by mass or less, more preferably 1.0% by mass or less, and 0.9% by mass or less from the viewpoint that HAST reliability can be significantly improved. Is more preferable.
- the bonding wire of the present invention may contain Pd together with the second element and / or the third element, or may contain Pd instead of one or both of the second element and the third element. May be.
- a copper alloy containing the necessary concentration of the additive element is prepared by melting.
- an arc heating furnace, a high-frequency heating furnace, a resistance heating furnace, or the like can be used.
- a vacuum atmosphere or an inert atmosphere such as Ar or N 2 .
- ICP Inductively Coupled Plasma
- this alloying there are a method of directly adding a high-purity component and a method of using a mother alloy containing an additive element at a high concentration of about 1%.
- the technique using the mother alloy is effective for making the element distribution uniform by containing it in a low concentration.
- the additive component of the present invention when the first element is contained at a relatively high concentration of 0.5% by mass or more, high-purity direct addition can be used, and the first element and the second element can be reduced. In order to make it contain stably in a density
- the deposition method can be selected from (1) application of aqueous solution ⁇ drying ⁇ heat treatment, (2) plating method (wet method), and (3) vapor deposition method (dry method).
- the produced copper alloy ingot is first processed into a large diameter by rolling and then thinned to the final wire diameter by wire drawing.
- a grooved roll or swaging is used in the rolling process.
- a continuous wire drawing apparatus that can set a plurality of diamond-coated dies is used. If necessary, heat treatment is performed at an intermediate stage of processing or at the final wire diameter.
- the material strength (hardness) of the wire increases. For this reason, when the bonding wire is drawn, the area reduction during drawing is set to a low area reduction of 5 to 8%.
- heat treatment after wire drawing is also high in hardness, heat treatment was performed at a temperature of 700 ° C. or higher in order to soften the wire to a level that can be used as a bonding wire. Due to the high heat treatment temperature, the average crystal grain size ( ⁇ m) in the cross section of the core material exceeds (0.1 ⁇ R + 0.5) (R is the wire diameter ( ⁇ m)), and the wedge bondability is slightly reduced. It was. On the other hand, when the heat treatment temperature was lowered, the average crystal grain size ( ⁇ m) in the cross section of the core material was less than (0.02 ⁇ R + 0.4), and the collapsed shape of the ball joint portion was slightly lowered.
- the area reduction rate is 10% or more in a die that is half or more of the total number of dies, and the heat treatment temperature in heat treatment after wire drawing is 600 ° C. or less.
- a low temperature is preferred.
- the average crystal grain size ( ⁇ m) in the cross section of the core material perpendicular to the wire axis of the bonding wire can be in a suitable range (0.02 ⁇ R + 0.4 or more, 0.1 ⁇ R + 0.5 or less). (R is the wire diameter ( ⁇ m)).
- the lubricant is designed to have a higher concentration of nonionic surfactant in the lubricant than before, and the die approach angle is more than the conventional one
- the copper alloy bonding wire contains a total of 0.03% by mass or more of the first element component and hardens due to a synergistic effect such as a gentle design and lower die cooling water temperature than before.
- wire drawing with a surface reduction rate of 10% or more is possible.
- the manufacturing conditions for managing the average film thickness of copper oxide on the wire surface in the range of 0.0005 to 0.02 ⁇ m at the mass production level, it is preferable to suppress oxidation in the wire manufacturing process.
- the temperature 200 to 850 ° C
- the management of the oxygen concentration in the furnace are effective. It is. It is effective to measure the oxygen concentration in the center of the furnace and adjust the concentration range to be 0.1 to 6% by volume.
- the wire drawing process As a method for controlling the oxygen concentration within the above range, it is possible to manage the prevention of air entrainment from the outside to the heat treatment furnace by optimizing the gas flow rate and changing the shape of the entrance and exit of the furnace. Furthermore, at the mass production level, it is also desirable to manage the wire drawing process. For example, the wire is dried by blowing (40-60 ° C. warm air) before winding the wire after one pass of the wire drawing process in water. It is also effective to positively remove surface moisture and to control the humidity of storage during the manufacturing process (relative humidity of 60% or less for storage for 2 days or more).
- Example 1 First, a method for manufacturing a sample is described.
- Cu used as the raw material of the core material has a purity of 99.99% by mass or more (in this example, 6N (concentration of 99.9999% by mass or more) is used) and the balance is composed of inevitable impurities. .
- As the first element, the second element, the third element, and Pd those having a purity of 99% by mass or more and the balance composed of inevitable impurities were used.
- a first element, a second element, a third element, and an alloy element of Pd, which are additive elements to the core material, are prepared so that the composition of the wire or the core material becomes the target. Regarding the addition of each element, it is possible to prepare a single element. However, if the element has a high melting point and the addition amount is extremely small, a Cu mother alloy containing the additive element is prepared in advance. You may mix
- the copper alloy was manufactured to have a wire diameter of several mm by continuous casting.
- the resulting alloy of several mm was drawn to produce a wire having a diameter of 0.3 to 1.4 mm.
- a commercially available lubricant was used for wire drawing, and the wire drawing speed was 20 to 150 m / min.
- a die having a surface reduction rate of 10 to 21% in more than half of the total number of dies was drawn to a diameter of 20 ⁇ m or 18 ⁇ m by performing one to three heat treatments at 200 to 600 ° C. in the middle.
- heat treatment was finally performed so that the elongation at break was about 5 to 15%.
- the heat treatment was performed while continuously sweeping the wire and flowing N 2 or Ar gas.
- the wire feed rate was 10 to 90 m / min
- the heat treatment temperature was 350 to 600 ° C.
- the heat treatment time was 1 to 10 seconds.
- the heat treatment temperature was set to a low temperature of 300 ° C. or lower, and Examples 6, 10, 55, 62, In No. 77, the heat treatment temperature was as high as 700 ° C. or higher.
- Crystal grain size was evaluated by the EBSD method. Dedicated software (OIM Analysis, etc. manufactured by TSL Solutions) was used for analysis of EBSD measurement data.
- the crystal grain size is an arithmetic average of the equivalent diameters of the crystal grains included in the measurement region (the diameter of the circle corresponding to the area of the crystal grains).
- SAM-670 (manufactured by PHI, FE type) is used for the measurement, the acceleration voltage of the electron beam is 5 kV, the measurement region is 10 nA, the acceleration voltage of Ar ion sputtering is 3 kV, and the sputtering rate is 11 nm / min. did.
- the measurement result of the average film thickness of copper oxide was described in the column of “average copper film thickness” in each table.
- the bonding reliability of the ball bonding portion in a high temperature and high humidity environment or a high temperature environment was determined by preparing a sample for bonding reliability evaluation, performing HAST evaluation, and determining the bonding life of the ball bonding portion.
- a sample for evaluating the bonding reliability is an electrode formed by forming an Al-1.0% Si-0.5% Cu alloy having a thickness of 0.8 ⁇ m on a Si substrate on a general metal frame.
- Ball bonding was performed using a commercially available wire bonder, and sealing was performed using a commercially available epoxy resin. The balls were formed while N 2 + 5% H 2 gas was flowed at a flow rate of 0.4 to 0.6 L / min, and the size was in the range of ⁇ 33 to 34 ⁇ m.
- the produced sample for evaluation of bonding reliability was exposed to a high-temperature and high-humidity environment with a temperature of 130 ° C. and a relative humidity of 85% using an unsaturated pressure cooker tester, and a bias of 7 V was applied. .
- the joint life of the ball joint was subjected to a shear test of the ball joint every 48 hours, and the shear strength value was set to be half the shear strength obtained at the initial stage.
- the shear test after the high-temperature and high-humidity test was conducted after removing the resin by acid treatment and exposing the ball joint.
- the test machine made by DAGE was used as the share test machine for HAST evaluation.
- As the value of the shear strength an average value of 10 measured values of randomly selected ball joints was used.
- the bonding life is less than 96 hours, it is determined that there is a problem in practical use. If it is ⁇ , it is practical if it is 96 hours or more and less than 144 hours, but it is slightly problematic, ⁇ mark, 144 hours or more 192 If it was less than the time, it was judged that there was no problem in practical use, and it was judged that it was excellent if it was 192 hours or more, and it was marked ⁇ , and it was written in the “HAST” column of each table. Only x is unacceptable, otherwise it is acceptable.
- wedge bondability The evaluation of the wedge bondability at the wire bonding portion was performed by performing 1000 bondings on the lead portion of the lead frame and determining the frequency of occurrence of peeling at the bonding portion.
- As the lead frame an Fe-42 atomic% Ni alloy lead frame plated with 1 to 3 ⁇ m of Ag was used.
- the stage temperature was set to 150 ° C., which is lower than the general set temperature range, assuming severer bonding conditions than usual. In the above evaluation, when 11 or more defects are generated, it is determined that there is a problem. ⁇ mark, 6 to 10 defects are practical.
- the bonding wires according to Examples 1 to 103 in which the average film thickness of copper oxide on the surface of the wire was in the range of 0.0005 to 0.02 ⁇ m had good HAST evaluation results.
- the area reduction rate at the time of wire drawing is 10% or more in dies that are more than half of the total number of dies, and the heat treatment temperature in heat treatment after wire drawing is as low as 600 ° C. or less.
- the core perpendicular to the wire axis of the bonding wire The average crystal grain size ( ⁇ m) in the cross section of the material was in the range of 0.02 ⁇ R + 0.4 or more and 0.1 ⁇ R + 0.5 or less (R is the wire diameter ( ⁇ m) of the wire).
- the average crystal grain size ( ⁇ m) in the cross section of the core material perpendicular to the wire axis of the bonding wire is in the range of 0.02 ⁇ R + 0.4 or more and 0.1 ⁇ R + 0.5 or less (R is the wire). It was found that the wedge bondability and the collapsed shape of the ball joint portion are good when the wire diameter is ( ⁇ m).
- Example 11 since the heat treatment temperature was lowered to 300 ° C. or lower, the average crystal grain size was less than the lower limit of the preferred range, and the wedge bondability was “ ⁇ ”, resulting in a slight decrease.
- Example 10 since the heat treatment temperature was set to a high temperature of 700 ° C. or higher, the average crystal grain size exceeded the upper limit of the preferred range. As a result, in Example 10, the collapsed shape was “ ⁇ ” and slightly decreased. As a result.
- the HAST test is performed more than the bonding wires according to Examples 7 to 14 containing only one kind of the first element and the same content. The results were even better. From this result, in the bonding wire containing two or more types of the first element, the ball joint reliability is further improved in the HAST test under the high temperature and high humidity environment where the temperature is 130 ° C. and the relative humidity is 85%. I understood.
- the bonding wires according to the examples in the bonding wires according to Examples 44 to 66 containing 0.0001 to 0.050% by mass of the second element, the collapsed shape of the ball joint portion was good.
- the examples further include at least one element selected from Ag and Au (third element) in a total amount of 0.0005 to 0.5 mass% according to examples 67 to 92 In the bonding wire, the collapsed shape of the ball joint was good.
- the bonding wires according to Examples 93 to 103 further containing Pd of 1.15% by mass or less have HAST in a high temperature and high humidity environment where the temperature is 130 ° C. and the relative humidity is 85%.
- the second element is further 0.0001 to 0.050 mass%, and at least one element selected from Ag and Au (In the bonding wires according to Examples 75, 76, 84, 85, and 90 to 92 containing the total amount of the third element) of 0.0005 to 0.07 mass%, the HAST evaluation result, wedge bondability, and ball The favorable result that all the crushing shapes of a junction part were favorable was obtained.
- the HAST evaluation results were particularly good in Examples 75 and 76 containing two or more kinds of the first element.
- the second element further contains 0.0001 to 0.050 mass%, and Pd contains 1.15 mass% or less.
- the HAST evaluation result was further improved, and preferable results were obtained that the FAB shape, wedge bondability, and the collapsed shape of the ball bonded portion were good.
- the bonding wires of the comparative examples cannot obtain the ball joint reliability in the HAST test.
- the bonding wires of Comparative Examples 1, 2, 5, and 6 in which the total element concentration of 1 was greater than 3% by mass the FAB shape and wedge bondability were poor.
Abstract
Description
(1)Ni,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる少なくとも1種以上の元素を総計で0.03質量%以上3質量%以下含有し、残部がCuと不可避不純物からなることを特徴とする半導体装置用銅合金ボンディングワイヤ。
(2)前記銅合金ボンディングワイヤのワイヤ軸に垂直方向の芯材断面における平均結晶粒径(μm)が、ワイヤの線径をR(μm)とすると、
0.02×R+0.4以上 (1a)
0.1×R+0.5以下 (1b)
であることを特徴とする(1)に記載の半導体装置用銅合金ボンディングワイヤ。
(3)ワイヤ表面の酸化銅の平均膜厚が0.0005~0.02μmの範囲であることを特徴とする(1)または(2)に記載の半導体装置用銅合金ボンディングワイヤ。
(4)前記銅合金ボンディングワイヤがさらにTi、B、P、Mg、Ca、La、As、Te、Seから選ばれる少なくとも1種以上の元素を、ワイヤ全体に対し、それぞれ0.0001~0.050質量%含有することを特徴とする(1)~(3)のいずれか1つに記載の半導体装置用銅合金ボンディングワイヤ。
(5)前記銅合金ボンディングワイヤがさらにAg、Auから選ばれる少なくとも1種以上の元素を、ワイヤ全体に対し、総計で0.0005~0.5質量%含有することを特徴とする(1)~(4)のいずれか1つに記載の半導体装置用銅合金ボンディングワイヤ。
(6)前記銅合金ボンディングワイヤがさらにPdを1.15質量%以下含有することを特徴とする(1)~(5)のいずれか1つに記載の半導体装置用銅合金ボンディングワイヤ。
(7)前記銅合金ボンディングワイヤがNi,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる元素を2種以上含有することを特徴とする(1)~(6)のいずれか1つに記載の半導体装置用銅合金ボンディングワイヤ。
本発明の半導体装置用銅合金ボンディングワイヤ(以下、単に「ボンディングワイヤ」ともいう。)は、Ni,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる少なくとも1種以上の元素(「第1の元素」ともいう。)を総計で0.03質量%以上3質量%以下含有し、残部がCuと不可避不純物からなる銅合金を伸線してなることを特徴とする。本発明のボンディングワイヤは、銅を主体とする合金であることから、「銅合金ボンディングワイヤ」ともいう。本発明の半導体装置用銅合金ボンディングワイヤは、銅以外の金属を主成分とする被覆層を有していないボンディングワイヤであり、「ベアCu合金ワイヤ」ともいう。本発明のボンディングワイヤは、車載用デバイスで要求される高温高湿環境でのボール接合部の接合信頼性を改善することができる。
ボンディングワイヤ中の結晶粒径がワイヤ品質に及ぼす影響について評価した。その結果、ボンディングワイヤのワイヤ軸に垂直方向の芯材断面における平均結晶粒径には好適範囲があり、平均結晶粒径(μm)が、ワイヤの線径をR(μm)としたとき、
0.02×R+0.4以上 (1a)
0.1×R+0.5以下 (1b)
であるときには、ボール接合部のつぶれ形状や、ウェッジ接合性が特に良好になることが判明した。
本発明において好ましくは、ワイヤ表面の酸化銅の平均膜厚を0.0005~0.02μmの範囲とする。第1の元素を総計で0.03~3質量%の濃度範囲で含有する銅合金ボンディングワイヤにおいて、ワイヤ表面の酸化銅の平均膜厚が0.0005~0.02μmの範囲であれば、HAST信頼性を量産レベルで安定して向上させる効果をより一層高められる。ワイヤ表面の酸化銅の膜厚が0.02μmよりも厚くなると、第1の元素を含有する銅合金からなるボンディングワイヤのボール接合部のHAST信頼性の改善効果にばらつきが生じて、HAST加熱後の接合強度等が不安定となる傾向がある。このHAST信頼性のばらつきは線径が20μm以下のボンディングワイヤでより問題となる可能性がある。第1の元素を含有する銅合金の表面の酸化銅がHAST信頼性を不安定化させる要因について、まだ不明な点もあるが、銅合金ボンディングワイヤの長手方向又はワイヤ表面から深さ方向での第1の元素の濃度分布が不均一となること、あるいは、ボール内部の侵入酸素又は残留酸化物が第1の元素のHAST信頼性の向上効果を阻害する可能性があること、等が考えられる。第1の元素を含有する銅合金ボンディングワイヤによれば表面酸化を遅らせる効果が得られるため、酸化銅の平均膜厚を薄い範囲である0.0005~0.02μmに制御することが容易である。第1の元素を総計で0.03~3質量%の濃度範囲で含有する銅合金ボンディングワイヤでは、高純度銅に比較して、20~40℃程度の低温域におけるワイヤ表面の酸化銅膜の成長を遅らせる作用を有することも確認された。
本発明のボンディングワイヤはさらにTi、B、P、Mg、Ca、La、As、Te、Seから選ばれる少なくとも1種以上の元素(「第2の元素」ともいう。)をワイヤ全体に対し、それぞれ0.0001~0.050質量%含有すると好ましい。これにより、高密度実装に要求されるボール接合部のつぶれ形状を改善、すなわちボール接合部形状の真円性を改善することができる。またこれにより、より良好なボール形状を実現することができる。第2の元素の含有量(濃度)は、ボール接合部の圧着形状を真円化させる効果を向上できるという観点から、総計で0.0001質量%以上が好ましく、0.0002質量%以上がより好ましく、0.0003質量%以上がさらに好ましい。また、ボールの硬質化を抑制してボール接合時のチップダメージを抑制する観点から、第2の元素の含有量は0.050質量%以下が好ましく、0.045質量%以下がより好ましく、0.040質量%以下がさらに好ましい。また、当該第2の元素をそれぞれ0.0005質量%以上含有することにより、ウェッジ接合部の不良発生を低減させる効果が得られるので、より好ましい。第2の元素の添加により、ワイヤが変形するときにワイヤの加工硬化を低減して、ウェッジ接合のワイヤ変形を促進する作用を高められる。詳細な機構は不明であるが、第1の元素はCu中に固溶すること、第2の元素はCu中の固溶度が小さいため析出、偏析することで、これらの元素が補完的に作用し、ウェッジ接合のワイヤ変形に、一段と優れた効果が発揮できていると考えられる。
本発明のボンディングワイヤはさらにAg、Auから選ばれる少なくとも1種以上の元素(「第3の元素」ともいう。)を総計で0.0005~0.5質量%含有すると好ましい。最近の高密度実装で要求される狭ピッチ接続では、ボール接合部の変形形状が重要であり、花弁状、偏芯等の異形を抑えて、真円化させることが求められる。第3の元素を第1の元素と併用して添加することで、ボール変形を容易に等方的にでき、圧着形状を真円化させる効果が高められる。これにより、50μm以下の狭ピッチ接続にも十分適応できることが確認された。この効果は、第3の元素含有量が総計で0.0005質量以上であればより効果的に発揮される。第3の元素の含有量は、ボール接合部の圧着形状を真円化させる効果を向上できるという観点から、総計で0.0005質量%以上が好ましく、0.0007質量%以上がより好ましく、0.001質量%以上がさらに好ましい。また、良好なFAB形状を得るという観点から、第3の元素の含有量は0.5質量%以下が好ましく、0.4質量%以下がより好ましく、0.3質量%以下がさらに好ましい。一方、第3の元素の含有量が総計で0.5質量%を超えると、FAB形状が悪化するおそれがある。ボンディングワイヤにAuを含有させると、再結晶温度が上がって、伸線加工中の動的再結晶を防ぐため加工組織が均一になり、熱処理後の結晶粒サイズが比較的均一になる。それによりワイヤの破断伸びが向上し、ボンディングした際に安定的なワイヤループを形成することができる。Auをさらに含有させる場合、ワイヤ中の第1の元素の総計が0.1質量%を超えるように含有量を定めることが好適である。本発明のボンディングワイヤは、第2の元素とともに第3の元素を含んでいていてもよいし、第2の元素に代えて、第3の元素を含有していてもよい。
本発明のボンディングワイヤはさらにPdを1.15質量%以下の範囲で含有すると好ましい。これにより、ボール接合部の高湿加熱信頼性をさらに向上できる。ボンディングワイヤ中にPdを上記濃度範囲で含有させることにより、Pdが接合界面まで拡散又は濃化して、CuとAlとの相互拡散に影響を及ぼすことで、ボール接合部接合界面に成長するCu-Al系の金属間化合物の腐食反応を遅らせると考えられる。Pdの含有量はHAST信頼性を顕著に高められるという観点から、1.15質量%以下であるのが好ましく、1.0質量%以下であるのがより好ましく、0.9質量%以下であるのがさらに好ましい。一方、Pd濃度が1.15質量%を超えると、ワイヤの常温強度・高温強度等が上昇することで、ループ形状のバラツキの発生、ウェッジ接合性の低下等が見られることがあるので、Pd含有量上限は1.15質量%とするのが好ましい。本発明のボンディングワイヤは、第2の元素及び/又は第3の元素とともにPdを含んでいてもよいし、第2の元素及び第3の元素のいずれか一方または双方に代えてPdを含んでいてもよい。
本発明の半導体装置用ボンディングワイヤの製造方法の概要について説明する。
まずサンプルの作製方法について説明する。芯材の原材料となるCuは純度が99.99質量%以上(本実施例では6N(濃度は99.9999質量%以上のもの)を使用)で残部が不可避不純物から構成されるものを用いた。第1の元素、第2の元素、第3の元素及びPdは純度が99質量%以上で残部が不可避不純物から構成されるものを用いた。ワイヤ又は芯材の組成が目的のものとなるように、芯材への添加元素である第1の元素、第2の元素、第3の元素、Pdの合金元素を調合する。各元素の添加に関しては、単体での調合も可能であるが、単体で高融点の元素や添加量が極微量である場合には、添加元素を含むCu母合金をあらかじめ作製しておいて目的の添加量となるように調合しても良い。
[元素の含有量]
ワイヤ中の各合金元素の含有量については、ICP発光分光分析装置を利用して分析した。
結晶粒径については、EBSD法で評価した。EBSD測定データの解析には専用ソフト(TSLソリューションズ製 OIM Analysis等)を利用した。結晶粒径は、測定領域内に含まれる結晶粒の相当直径(結晶粒の面積に相当する円の直径)を算術平均したものである。
ワイヤ表面の酸化銅の平均膜厚の測定には、オージェ分光分析による深さ分析を行い、ワイヤ表面のランダムな位置の最低3か所以上で測定した酸化銅の膜厚の平均値を用いた。Arイオンでスパッタしながら深さ方向に測定して、深さの単位はSiO2換算で表示した。酸素濃度が30質量%を酸化銅と金属銅の境界とする。ここでの酸素濃度とは、Cu、酸素、金属元素を総計した濃度に対する酸素濃度の比率を用いた。測定にはSAM-670(PHI社製、FE型)を用い、電子ビームの加速電圧を5kV、測定領域は10nAとし、Arイオンスパッタの加速電圧が3kV、スパッタ速度は11nm/分で測定を実施した。酸化銅の平均膜厚の測定結果を各表の「酸化銅平均膜厚」の欄に記載した。
高温高湿環境又は高温環境でのボール接合部の接合信頼性は、接合信頼性評価用のサンプルを作製し、HAST評価を行い、ボール接合部の接合寿命によって判定した。接合信頼性評価用のサンプルは、一般的な金属フレーム上のSi基板に厚さ0.8μmのAl-1.0%Si-0.5%Cuの合金を成膜して形成した電極に、市販のワイヤーボンダーを用いてボール接合を行い、市販のエポキシ樹脂によって封止して作製した。ボールはN2+5%H2ガスを流量0.4~0.6L/minで流しながら形成させ、その大きさはφ33~34μmの範囲とした。
ボール部におけるボール形成性(FAB形状)の評価は、接合を行う前のボールを採取して観察し、ボール表面の気泡の有無、本来真球であるボールの変形の有無を判定した。上記のいずれかが発生した場合は不良と判断した。ボールの形成は溶融工程での酸化を抑制するために、N2ガスを流量0.5L/minで吹き付けながら行った。ボールの直径は、ワイヤ線径の1.7倍とした。1条件に対して50個のボールを観察した。観察にはSEMを用いた。ボール形成性の評価において、不良が5個以上発生した場合には問題があると判断し×印、不良が3~4個であれば実用可能であるがやや問題有りとして△印、不良が1~2個の場合は問題ないと判断し○印、不良が発生しなかった場合には優れていると判断し◎印とし、各表の「FAB形状」の欄に表記した。×のみが不合格であり、それ以外は合格である。
ワイヤ接合部におけるウェッジ接合性の評価は、リードフレームのリード部分に1000本のボンディングを行い、接合部の剥離の発生頻度によって判定した。リードフレームは1~3μmのAgめっきを施したFe-42原子%Ni合金リードフレームを用いた。本評価では、通常よりも厳しい接合条件を想定して、ステージ温度を一般的な設定温度域よりも低い150℃に設定した。上記の評価において、不良が11個以上発生した場合には問題があると判断し×印、不良が6~10個であれば実用可能であるがやや問題有りとして△印、不良が1~5個の場合は問題ないと判断し○印、不良が発生しなかった場合には優れていると判断し◎印とし、各表の「ウェッジ接合性」の欄に表記した。×のみが不合格であり、それ以外は合格である。
ボール接合部のつぶれ形状の評価は、ボンディングを行ったボール接合部を直上から観察して、その真円性によって判定した。接合相手はSi基板上に厚さ1.0μmのAl-0.5%Cuの合金を成膜した電極を用いた。観察は光学顕微鏡を用い、1条件に対して200箇所を観察した。真円からのずれが大きい楕円状であるもの、変形に異方性を有するものはボール接合部のつぶれ形状が不良であると判断した。上記の評価において、不良が6個以上発生した場合には問題があると判断し×印、不良が4~5個であれば実用可能であるがやや問題有りとして△印、1~3個の場合は問題ないと判断し○印、全て良好な真円性が得られた場合は、特に優れていると判断し◎印とし、各表の「つぶれ形状」の欄に表記した。
表1、2に示すように、第1の元素の濃度が合計で0.03~3.0質量%の実施例1~103に係る銅合金ボンディングワイヤでは、温度が130℃、相対湿度が85%の高温高湿環境下でのHAST試験でボール接合部信頼性が得られることを確認した。
実施例10では、熱処理温度を700℃以上と高い温度としたために平均結晶粒径が好適範囲の上限超であり、その結果として、実施例10では、つぶれ形状が「△」であって若干低下する結果となった。
実施例に係るボンディングワイヤのうち、さらに、Ag、Auから選ばれる少なくとも1種以上の元素(第3の元素)を総計で0.0005~0.5質量%含有する実施例67~92に係るボンディングワイヤでは、ボール接合部のつぶれ形状が良好であった。
実施例に係るボンディングワイヤのうち、さらにPdを1.15質量%以下含有する実施例93~103に係るボンディングワイヤでは、温度が130℃、相対湿度が85%の高温高湿環境下でのHAST試験でボール接合部信頼性がさらに良好となることを確認した。
実施例に係るボンディングワイヤのうち、第1の元素に加えて、さらに、第2の元素をそれぞれ0.0001~0.050質量%、及び、Ag、Auから選ばれる少なくとも1種以上の元素(第3の元素)を総計で0.0005~0.07質量%を含有する、実施例75、76、84、85、90~92に係るボンディングワイヤでは、HAST評価結果、ウェッジ接合性、及びボール接合部のつぶれ形状がすべて良好であるという好ましい結果が得られた。なかでも第1の元素を2種類以上含む、実施例75および76ではHAST評価結果が特に良好であった。
また、実施例に係るボンディングワイヤのうち、第1の元素に加えて、さらに第2の元素をそれぞれ0.0001~0.050質量%、及び、Pdを1.15質量%以下含有する実施例98~99に係るボンディングワイヤでは、HAST評価結果がさらに良好で、FAB形状、ウェッジ接合性、及びボール接合部のつぶれ形状が良好であるという好ましい結果が得られた。
Claims (7)
- Ni,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる少なくとも1種以上の元素を総計で0.03質量%以上3質量%以下含有し、残部がCuと不可避不純物からなることを特徴とする半導体装置用銅合金ボンディングワイヤ。
- 前記銅合金ボンディングワイヤのワイヤ軸に垂直方向の芯材断面における平均結晶粒径(μm)が、ワイヤの線径をR(μm)とすると、
0.02×R+0.4以上 (1a)
0.1×R+0.5以下 (1b)
であることを特徴とする請求項1に記載の半導体装置用銅合金ボンディングワイヤ。 - ワイヤ表面の酸化銅の平均膜厚が0.0005~0.02μmの範囲であることを特徴とする請求項1又は2に記載の半導体装置用銅合金ボンディングワイヤ。
- 前記銅合金ボンディングワイヤがさらにTi、B、P、Mg、Ca、La、As、Te、Seから選ばれる少なくとも1種以上の元素を、ワイヤ全体に対し、それぞれ0.0001~0.050質量%含有することを特徴とする請求項1~3のいずれか1項に記載の半導体装置用銅合金ボンディングワイヤ。
- 前記銅合金ボンディングワイヤがさらにAg、Auから選ばれる少なくとも1種以上の元素を、ワイヤ全体に対し、総計で0.0005~0.5質量%含有することを特徴とする請求項1~4のいずれか1項に記載の半導体装置用銅合金ボンディングワイヤ。
- 前記銅合金ボンディングワイヤがさらにPdを1.15質量%以下含有することを特徴とする請求項1~5のいずれか1項に記載の半導体装置用銅合金ボンディングワイヤ。
- 前記銅合金ボンディングワイヤがNi,Zn,Ga,Ge,Rh,In,Ir,Ptから選ばれる元素を2種以上含有することを特徴とする請求項1~6のいずれか1項に記載の半導体装置用銅合金ボンディングワイヤ。
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