WO2017138274A1 - 基板処理装置および基板処理方法 - Google Patents
基板処理装置および基板処理方法 Download PDFInfo
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- WO2017138274A1 WO2017138274A1 PCT/JP2016/088671 JP2016088671W WO2017138274A1 WO 2017138274 A1 WO2017138274 A1 WO 2017138274A1 JP 2016088671 W JP2016088671 W JP 2016088671W WO 2017138274 A1 WO2017138274 A1 WO 2017138274A1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Definitions
- the present invention relates to a technique for processing a substrate.
- substrate In the manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the substrate. For example, a chemical solution treatment such as etching is performed on the surface of the substrate by supplying the chemical solution onto the substrate having a resist pattern formed on the surface. In addition, after the chemical liquid processing is finished, a cleaning liquid is supplied onto the substrate to perform the cleaning processing, and then the substrate is dried.
- a chemical solution treatment such as etching is performed on the surface of the substrate by supplying the chemical solution onto the substrate having a resist pattern formed on the surface.
- a cleaning liquid is supplied onto the substrate to perform the cleaning processing, and then the substrate is dried.
- a substrate processing apparatus disclosed in Japanese Patent Application Laid-Open No. 2003-1000069 includes a spin chuck that horizontally holds and rotates a substrate, and a disk-shaped shielding plate that is disposed to face the substrate.
- the spin chuck is fixed to the upper end of the rotation shaft of the chuck rotation drive mechanism.
- another rotating shaft is fixed along the same axis as the rotating shaft of the spin chuck.
- the other rotating shaft is formed in a hollow shape, and a processing liquid nozzle for supplying a processing liquid to the upper surface of the substrate is inserted into the other rotating shaft.
- a nitrogen gas flow path through which nitrogen gas for drying the substrate flows circulates between the inner surface of the other rotating shaft and the outer surface of the processing liquid nozzle.
- the blocking plate is rotated in the same direction at almost the same speed as the substrate. Further, nitrogen gas is supplied from the nitrogen gas flow passage to the space between the substrate and the blocking plate. Thereby, a stable air flow of nitrogen gas is generated between the substrate and the shielding plate, and the atmosphere between the substrate and the shielding plate is continuously replaced by the air flow. As a result, the substrate is quickly dried, and re-contamination of the substrate due to the rebound of the processing liquid shaken off from the substrate is prevented.
- the lower surface of the shielding plate is neutralized by irradiating the lower surface of the shielding plate after the drying process with weak X-rays that are electromagnetic waves having a neutralizing action. Irradiation of the weak X-rays to the blocking plate may be performed by retracting the splash guard downward in a state where the blocking plate is arranged close to the substrate before the drying process.
- the processing nozzle may be charged by friction with the nitrogen gas flowing through the nitrogen gas flow path between the rotating shaft of the blocking plate and the processing nozzle, and the processing liquid may adhere to the processing nozzle. Since the processing nozzle is housed inside the rotating shaft of the blocking plate, it is not easy to remove the charge by irradiating with X-rays.
- the present invention is directed to a substrate processing apparatus for processing a substrate, and an object thereof is to perform static elimination of a counter member with a simple structure.
- the present invention is also directed to a substrate processing method for processing a substrate.
- a substrate processing apparatus opposes an upper surface of a substrate, a substrate holding unit that holds the substrate in a horizontal state, a substrate rotation mechanism that rotates the substrate holding unit about a central axis that faces in the vertical direction, and A counter member that rotates about the central axis, a processing liquid supply unit that supplies a processing liquid to the upper surface of the substrate, and a gas for processing atmosphere in a radial central portion of a lower space that is a space below the counter member
- a gas supply unit that supplies ions, an ion generation unit that generates ions and supplies the ions to the processing atmosphere gas from the gas supply unit, and controls the substrate rotation mechanism, the gas supply unit, and the ion generation unit Accordingly, the process atmosphere gas containing the ions is lowered while rotating the substrate holding part and the counter member in a state where the counter member is positioned lower than when the substrate is loaded. It was supplied to the space, and a control section to form an ion stream extending from the radial center portion of the lower space
- the lower space in which the ion airflow is formed is a processing space that is a space between the lower surface of the facing member and the upper surface of the substrate, and the ion airflow The formation is performed during a drying process in which the processing liquid from the processing liquid supply unit is removed from the substrate by the rotation of the substrate by the substrate rotation mechanism.
- the lower space in which the ion stream is formed is a processing space that is a space between the lower surface of the facing member and the upper surface of the substrate, and the ion stream The formation is performed before the processing of the substrate by the processing liquid from the processing liquid supply unit.
- the formation of the ion stream before the processing of the substrate with the processing liquid is performed using the processing atmosphere gas supplied when the substrate is processed with the processing liquid.
- the opposing member is held, and the opposing member is moved relative to the substrate holding portion between a first position and a second position in the vertical direction.
- a counter member moving mechanism is further provided, and the counter member is held by the counter member moving mechanism at the first position, is spaced apart upward from the substrate holding portion, and holds the substrate at the second position. And is rotated together with the substrate holder by the substrate rotation mechanism.
- the facing member protrudes upward from the periphery of the facing member opening of the facing member main body, the facing member main body facing the upper surface of the substrate and having a facing member opening at a central portion in the radial direction.
- a processing liquid nozzle that is inserted into the counter member cylindrical portion and supplies the processing liquid to the upper surface of the substrate through the counter member opening.
- the gas for processing atmosphere containing the ions is supplied to the lower space through a nozzle gap that is a space between the processing liquid nozzle and the opposing member cylinder.
- the facing member further includes a facing member flange portion that is annularly extended radially outward from an upper end portion of the facing member tube portion and is held by the facing member moving mechanism, and the facing member is A labyrinth continuous with the nozzle gap is formed on the upper surface of the opposed member flange portion in a state located at the second position, and the processing atmosphere gas containing the ions is supplied to the labyrinth.
- the upper gap which seals the nozzle gap from the external space and spreads from the radial center to the radial outward along the upper surface of the opposing member by the processing atmosphere gas containing the ions flowing out of the labyrinth An air flow is formed.
- the ion generation part includes a discharge needle that generates the ions by performing discharge, and the opposing member has concavities and convexities alternately arranged concentrically on the upper surface of the opposing member flange part.
- the counter member moving mechanism further includes a first concave and convex portion arranged, and the counter member moving mechanism is disposed on the bottom surface of the counter member flange portion and the holding portion lower portion facing the vertical direction, and on the top surface and the vertical direction of the counter member flange portion. In a state where the holding member upper portion is opposed to and the concave and convex portions are alternately arranged concentrically on the lower surface of the holding portion upper portion, and the facing member is located at the second position.
- the labyrinth is formed by disposing the other convex portion in one concave portion of the first concave and convex portions and the second concave and convex portion through a gap, and the discharge needle is disposed inside the upper portion of the holding portion.
- Oh Te it is placed inside the injection port of the treatment atmosphere gas formed in the recess an upper surface of the second concave-convex portion.
- FIG. 1 is a cross-sectional view showing a configuration of a substrate processing apparatus 1 according to an embodiment of the present invention.
- the substrate processing apparatus 1 is a single-wafer type apparatus that processes semiconductor substrates 9 (hereinafter simply referred to as “substrates 9”) one by one.
- the substrate processing apparatus 1 includes a substrate holding unit 31, a substrate rotating mechanism 33, a cup unit 4, a top plate 5, a counter member moving mechanism 6, and a processing liquid nozzle 71. Each component of the substrate processing apparatus 1 is accommodated in the housing 11.
- the substrate holding unit 31 holds the substrate 9 in a horizontal state.
- the substrate holding part 31 includes a holding base part 311, a plurality of chucks 312, a plurality of engaging parts 313, and a base support part 314.
- the substrate 9 is disposed above the holding base portion 311 and separated from the holding base portion 311.
- Each of the holding base portion 311 and the base support portion 314 is a substantially disk-shaped member centered on a central axis J1 that faces in the vertical direction.
- the holding base portion 311 is disposed on the upper side of the base support portion 314 and is supported from below by the base support portion 314.
- the outer diameter of the holding base portion 311 is larger than the outer diameter of the base support portion 314.
- the holding base portion 311 extends radially outward from the base support portion 314 over the entire circumference in the circumferential direction around the central axis J1.
- the plurality of chucks 312 are arranged in the circumferential direction on the outer peripheral portion of the upper surface of the holding base portion 311 at substantially equal angular intervals around the central axis J1.
- the outer edge portion of the substrate 9 is supported by the plurality of chucks 312.
- the plurality of engaging portions 313 are arranged in the circumferential direction on the outer peripheral portion of the upper surface of the holding base portion 311 at substantially equal angular intervals around the central axis J1.
- the plurality of engaging portions 313 are disposed on the radially outer side than the plurality of chucks 312.
- the substrate rotation mechanism 33 is housed inside the rotation mechanism housing portion 34.
- the substrate rotation mechanism 33 and the rotation mechanism accommodation unit 34 are disposed below the substrate holding unit 31.
- the substrate rotation mechanism 33 rotates the substrate holding part 31 about the central axis J1. As a result, the substrate 9 is rotated together with the substrate holding part 31.
- the cup part 4 is an annular member centered on the central axis J1 and is arranged on the outer side in the radial direction of the substrate 9 and the substrate holding part 31.
- the cup unit 4 is disposed over the entire periphery of the substrate 9 and the substrate holding unit 31 and receives a processing liquid and the like that scatters from the substrate 9 toward the periphery.
- the cup unit 4 includes a first guard 41, a second guard 42, a guard moving mechanism 43, and a discharge port 44.
- the first guard 41 has a first guard side wall part 411 and a first guard canopy part 412.
- the 1st guard side wall part 411 is the substantially cylindrical shape centering on the central axis J1.
- the first guard canopy portion 412 has a substantially annular plate shape centered on the central axis J ⁇ b> 1 and extends radially inward from the upper end portion of the first guard side wall portion 411.
- the second guard 42 has a second guard side wall 421 and a second guard canopy 422.
- the second guard side wall portion 421 has a substantially cylindrical shape with the central axis J1 as the center, and is located on the radially outer side than the first guard side wall portion 411.
- the second guard canopy portion 422 has a substantially annular plate shape centered on the central axis J1, and extends radially inward from the upper end portion of the second guard side wall portion 421 above the first guard canopy portion 412. .
- the inner diameter of the first guard canopy portion 412 and the inner diameter of the second guard canopy portion 422 are slightly larger than the outer diameter of the holding base portion 311 of the substrate holding portion 31 and the outer diameter of the top plate 5.
- the guard moving mechanism 43 switches between the first guard 41 and the second guard 42 by moving the first guard 41 in the vertical direction, thereby receiving the processing liquid or the like from the substrate 9.
- the processing liquid received by the first guard 41 and the second guard 42 of the cup portion 4 is discharged to the outside of the housing 11 through the discharge port 44. Further, the gas in the first guard 41 and the second guard 42 is also discharged to the outside of the housing 11 through the discharge port 44.
- the top plate 5 is a substantially circular member in plan view.
- the top plate 5 is a facing member that faces the upper surface 91 of the substrate 9, and is a shielding plate that shields the upper side of the substrate 9.
- the outer diameter of the top plate 5 is larger than the outer diameter of the substrate 9 and the outer diameter of the holding base portion 311.
- the top plate 5 includes a counter member main body 51, a held portion 52, a plurality of engaging portions 53, and a first uneven portion 55.
- the counter member main body 51 includes a counter member canopy 511 and a counter member side wall 512.
- the facing member canopy portion 511 is a substantially annular plate-shaped member centered on the central axis J ⁇ b> 1 and faces the upper surface 91 of the substrate 9.
- the top plate 5 is made of, for example, a nonconductive resin.
- a material substantially not containing a conductive substance such as carbon is preferably used in order to prevent an unintended influence on the processing of the substrate 9.
- a counter member opening 54 is provided at the center of the counter member canopy 511.
- the facing member opening 54 is, for example, substantially circular in plan view.
- the diameter of the facing member opening 54 is sufficiently smaller than the diameter of the substrate 9.
- the opposing member side wall portion 512 is a substantially cylindrical member centered on the central axis J1 and extends downward from the outer peripheral portion of the opposing member canopy portion 511.
- the plurality of engaging portions 53 are arranged in the circumferential direction on the outer peripheral portion of the lower surface of the facing member canopy portion 511 at substantially equal angular intervals around the central axis J1.
- the plurality of engaging portions 53 are disposed on the radially inner side of the opposing member side wall portion 512.
- the held portion 52 is connected to the upper surface of the opposing member main body 51.
- the held portion 52 includes a counter member cylinder portion 521 and a counter member flange portion 522.
- the opposing member cylinder 521 is a substantially cylindrical portion that protrudes upward from the periphery of the opposing member opening 54 of the opposing member main body 51.
- the opposing member cylinder 521 has, for example, a substantially cylindrical shape with the central axis J1 as the center.
- the opposing member flange portion 522 extends in an annular shape outward in the radial direction from the upper end portion of the opposing member cylinder portion 521.
- the opposing member flange portion 522 has, for example, a substantially annular plate shape centered on the central axis J1.
- first concave and convex portions 55 are provided in which circumferential concave portions and circumferential convex portions are alternately arranged concentrically.
- the first uneven portion 55 has a plurality of concave portions and a plurality of convex portions.
- the innermost concave portion 551 is provided in the upper portion of the opposed member cylinder portion 521 and is larger in the vertical direction than the other concave portions of the first uneven portion 55.
- the facing member moving mechanism 6 includes a facing member holding portion 61 and a facing member lifting mechanism 62.
- the facing member holding portion 61 holds the held portion 52 of the top plate 5.
- the opposing member holding part 61 includes a holding part main body 611, a main body support part 612, a flange support part 613, a support part connection part 614, and a second uneven part 615.
- the holding part main body 611 has, for example, a substantially disc shape centered on the central axis J1.
- the holding part main body 611 covers the upper side of the opposing member flange part 522 of the top plate 5.
- the main body support 612 is a rod-like arm that extends substantially horizontally. One end portion of the main body support portion 612 is connected to the holding portion main body 611, and the other end portion is connected to the opposing member lifting mechanism 62.
- the treatment liquid nozzle 71 protrudes downward from the central part of the holding part main body 611.
- the treatment liquid nozzle 71 is inserted into the opposing member cylinder 521 in a non-contact state.
- a space between the processing liquid nozzle 71 and the counter member cylinder 521 is referred to as a “nozzle gap 56”.
- the nozzle gap 56 is, for example, a substantially cylindrical space centered on the central axis J1.
- second concavo-convex portions 615 in which circumferential concave portions and circumferential convex portions are alternately arranged concentrically on the lower surface of the holding portion main body 611.
- the 2nd uneven part 615 opposes the 1st uneven part 55 in the up-and-down direction.
- the flange support portion 613 has, for example, a substantially annular plate shape centered on the central axis J1.
- the flange support portion 613 is located below the opposing member flange portion 522.
- the inner diameter of the flange support portion 613 is smaller than the outer diameter of the opposing member flange portion 522 of the top plate 5.
- the outer diameter of the flange support portion 613 is larger than the outer diameter of the opposing member flange portion 522 of the top plate 5.
- the support part connection part 614 has, for example, a substantially cylindrical shape centered on the central axis J1.
- the support part connection part 614 connects the flange support part 613 and the holding part main body 611 around the opposing member flange part 522.
- the holding portion main body 611 is a holding portion upper portion that faces the upper surface of the facing member flange portion 522 in the vertical direction, and the flange support portion 613 is held facing the lower surface of the facing member flange portion 522 in the vertical direction. It is the lower part.
- the flange support portion 613 supports the outer peripheral portion of the opposing member flange portion 522 of the top plate 5 in contact with the lower side.
- the facing member flange portion 522 is held by the facing member holding portion 61 of the facing member moving mechanism 6. Accordingly, the top plate 5 is suspended by the counter member holding portion 61 above the substrate 9 and the substrate holding portion 31.
- the vertical position of the top plate 5 shown in FIG. 1 is referred to as “first position”.
- the top plate 5 is held by the facing member moving mechanism 6 at the first position and is separated upward from the substrate holding portion 31.
- the lower end of the convex portion of the second uneven portion 615 is located above the upper end of the convex portion of the first uneven portion 55.
- the flange support part 613 is provided with a movement restricting part 616 that restricts displacement of the top plate 5 (that is, movement and rotation of the top plate 5).
- the movement restricting portion 616 is a protruding portion that protrudes upward from the upper surface of the flange support portion 613.
- FIG. 2 is a cross-sectional view showing a state in which the top plate 5 is lowered from the first position shown in FIG.
- the vertical position of the top plate 5 shown in FIG. 2 is referred to as a “second position”. That is, the opposing member lifting mechanism 62 moves the top plate 5 in the vertical direction relative to the substrate holder 31 between the first position and the second position in the vertical direction.
- the second position is a position below the first position. In other words, the second position is a position where the top plate 5 is closer to the substrate holding portion 31 in the vertical direction than the first position.
- the plurality of engaging portions 53 of the top plate 5 are engaged with the plurality of engaging portions 313 of the substrate holding portion 31, respectively.
- the plurality of engaging portions 53 are supported from below by the plurality of engaging portions 313.
- the plurality of engaging portions 313 are opposing member support portions that support the top plate 5.
- the engaging portion 313 is a pin that is substantially parallel to the vertical direction, and the upper end portion of the engaging portion 313 is fitted into a recess formed upward at the lower end portion of the engaging portion 53.
- the opposing member flange portion 522 of the top plate 5 is spaced upward from the flange support portion 613 of the opposing member holding portion 61.
- the top plate 5 is held by the substrate holding portion 31 and is separated from the opposing member moving mechanism 6 at the second position (that is, is not in contact with the opposing member moving mechanism 6).
- the lower end of the opposing member side wall portion 512 of the top plate 5 is, for example, below the upper surface of the holding base portion 311 of the substrate holding portion 31 or the holding base portion. It is located at the same position with respect to the upper surface of 311 and the vertical direction.
- the substrate rotation mechanism 33 is driven with the top plate 5 positioned at the second position, the top plate 5 rotates about the central axis J1 together with the substrate 9 and the substrate holding part 31.
- the top plate 5 can be rotated about the central axis J1 together with the substrate 9 and the substrate holding part 31 by the substrate rotating mechanism 33.
- the processing liquid nozzle 71 is in non-contact with the opposing member cylinder 521 through the nozzle gap 56, and does not rotate even when the top plate 5 rotates. Located in. In other words, when the top plate 5 rotates, the opposing member cylinder 521 rotates with other parts of the top plate 5 around the processing liquid nozzle 71 in a stationary state.
- FIG. 3 is an enlarged cross-sectional view showing a part of the top plate 5 and the opposed member moving mechanism 6.
- the first uneven portion 55 and the second uneven portion 615 are close to each other in the vertical direction in a non-contact state.
- the convex portion of the first concave and convex portion 55 is disposed in the concave portion of the second concave and convex portion 615 via a gap, and the convex portion of the second concave and convex portion 615 is disposed in the concave portion of the first concave and convex portion 55 via the gap.
- the other convex portion is disposed in one concave portion of the first concave and convex portion 55 and the second concave and convex portion 615 with a gap therebetween.
- the labyrinth 57 is formed on the upper surface of the opposing member flange portion 522. Specifically, a labyrinth 57 is formed between the facing member flange portion 522 of the top plate 5 and the holding portion main body 611 of the facing member moving mechanism 6 around the processing liquid nozzle 71. In the entire labyrinth 57, the vertical distance and the radial distance between the first uneven portion 55 and the second uneven portion 615 are approximately constant. The labyrinth 57 continues to the nozzle gap 56. When the top plate 5 rotates, the first uneven portion 55 rotates and the second uneven portion 615 does not rotate.
- FIG. 4 is a plan view showing the gas supply path 58.
- the gas supply path 58 includes a first flow path 581, a first manifold 582, a plurality of second flow paths 583, a second manifold 584, and a plurality of gas injection ports 585.
- the first manifold 582, the plurality of second flow paths 583, and the second manifold 584 are formed inside the holding portion main body 611, and the plurality of gas injection ports 585 are formed on the lower surface of the holding portion main body 611.
- the plurality of gas injection ports 585 are formed on the upper surface of the recessed portion of the second uneven portion 615 of the holding portion main body 611.
- the first flow path 581 is formed inside the main body support portion 612.
- the plurality of gas injection ports 585 are arranged in the circumferential direction at substantially equal angular intervals on the upper surface of one recess of the second uneven portion 615 (that is, the bottom surface of the recess).
- the plurality of gas injection ports 585 are circumferential injection ports arranged circumferentially around the central axis J1.
- the circumferential injection port is disposed between the radial inner end and the radial outer end of the labyrinth 57.
- one substantially annular injection port centered on the central axis J1 may be provided as a circumferential injection port instead of the plurality of gas injection ports 585.
- the second manifold 584 is disposed above the plurality of gas injection ports 585 and connected to the plurality of gas injection ports 585.
- the second manifold 584 is a substantially annular flow path centered on the central axis J1.
- the first manifold 582 is disposed on the radially outer side of the second manifold 584.
- the first manifold 582 is a substantially annular flow path centered on the central axis J1.
- the plurality of second flow paths 583 are linear flow paths extending substantially in the radial direction, and connect the first manifold 582 and the second manifold 584. In the example shown in FIG. 4, four second flow paths 583 are arranged in the circumferential direction at substantially equal angular intervals.
- the first flow path 581 extends radially outward from the first manifold 582.
- the first flow path 581 is disposed at a position different from the plurality of second flow paths 583 in the circumferential direction.
- FIG. 5 is a block diagram showing the gas-liquid supply unit 7 related to the supply of gas and processing liquid in the substrate processing apparatus 1.
- the gas-liquid supply unit 7 includes a processing liquid nozzle 71, a processing liquid supply unit 72, and a gas supply unit 73.
- the processing liquid supply unit 72 is connected to the processing liquid nozzle 71.
- the gas supply unit 73 is connected to the processing liquid nozzle 71 and supplies gas to the processing liquid nozzle 71.
- the gas supply unit 73 is also connected to the first flow path 581 of the gas supply path 58 provided in the facing member holding section 61, and supplies gas to the labyrinth 57 through the gas supply path 58.
- the substrate processing apparatus 1 further includes a control unit 21.
- the control unit 21 controls the configuration of the substrate rotation mechanism 33 and the counter member moving mechanism 6 (see FIG. 1), the processing liquid supply unit 72, the gas supply unit 73, an ion generation unit 8 described later, and the like. In the drawings other than FIG. 5, the control unit 21 is not shown in order to simplify the drawing.
- the processing liquid may be, for example, a chemical liquid used for chemical treatment of the substrate 9 (polymer removal liquid, etching liquid such as hydrofluoric acid or tetramethylammonium hydroxide aqueous solution).
- the processing liquid may be a cleaning liquid such as pure water (DIW) or carbonated water used for cleaning the substrate 9, for example.
- the processing liquid may be, for example, isopropyl alcohol (IPA) supplied to replace the liquid on the substrate 9.
- Gas supplied from the gas supply unit 73 is, for example, nitrogen (N 2) is an inert gas such as a gas. Various gases other than the inert gas may be supplied from the gas supply unit 73.
- FIG. 6 is a cross-sectional view showing a part of the processing liquid nozzle 71 in an enlarged manner.
- the treatment liquid nozzle 71 is made of, for example, PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer).
- a processing liquid channel 716 and two gas channels 717 are provided inside the processing liquid nozzle 71.
- the processing liquid channel 716 is connected to the processing liquid supply unit 72 shown in FIG.
- the two gas flow paths 717 are connected to the gas supply unit 73 shown in FIG.
- the processing liquid supplied from the processing liquid supply unit 72 to the processing liquid channel 716 shown in FIG. 6 is discharged downward from the discharge port 716 a provided on the lower end surface of the processing liquid nozzle 71.
- the processing liquid nozzle 71 is provided with a plurality of processing liquid flow paths 716 corresponding to the plurality of types of processing liquids, respectively. It may be discharged from a plurality of discharge ports 716a.
- the inert gas supplied from the gas supply unit 73 to the central gas flow channel 717 (the right gas flow channel 717 in the drawing) is directed downward from the lower surface injection port 717 a provided on the lower end surface of the processing liquid nozzle 71. (For example, injection).
- the inert gas supplied from the gas supply unit 73 to the gas channel 717 on the outer peripheral portion is supplied to the periphery from a plurality of side surface injection ports 717 b provided on the side surface of the processing liquid nozzle 71.
- the plurality of side surface injection ports 717b are arranged at substantially equal angular intervals in the circumferential direction.
- the plurality of side surface injection ports 717b are connected to a circumferential flow channel extending in the circumferential direction from the lower end portion of the gas flow channel 717 at the outer circumferential portion.
- the inert gas supplied from the gas supply unit 73 is supplied (for example, injected) obliquely downward from the plurality of side surface injection ports 717b. Note that only one side injection port 717b may be provided.
- the processing liquid supplied from the processing liquid supply unit 72 (see FIG. 5) is discharged from the discharge port 716a of the processing liquid nozzle 71 toward the upper surface 91 of the substrate 9 through the counter member opening 54 shown in FIG. .
- the processing liquid nozzle 71 supplies the processing liquid supplied from the processing liquid supply unit 72 to the upper surface 91 of the substrate 9 through the counter member opening 54.
- the processing liquid nozzle 71 may protrude downward from the facing member opening 54 of the facing member main body 51.
- the front end of the processing liquid nozzle 71 may be positioned below the lower end edge of the facing member opening 54.
- the processing liquid supplied from the processing liquid supply unit 72 flows downward through the counter member opening 54 in the processing liquid nozzle 71, and the upper surface 91 of the substrate 9 from the discharge port 716 a (see FIG. 6) of the processing liquid nozzle 71. It is discharged toward.
- the processing liquid is supplied through the counter member opening 54, the processing liquid discharged from the processing liquid nozzle 71 above the counter member opening 54 passes through the counter member opening 54 as well as the counter member. A state in which the processing liquid is discharged through the processing liquid nozzle 71 inserted into the opening 54 is also included.
- a part of the inert gas supplied from the gas supply unit 73 (see FIG. 5) to the processing liquid nozzle 71 from the lower surface injection port 717a (see FIG. 6) of the processing liquid nozzle 71 in the space below the top plate 5. It is supplied to the central part in the radial direction of a certain lower space. Specifically, a part of the inert gas from the gas supply unit 73 passes between the lower surface injection port 717 a of the processing liquid nozzle 71 and the lower surface of the top plate 5 and the upper surface 91 of the substrate 9 through the opposing member opening 54. Is supplied to the central portion in the radial direction of the processing space 90.
- a part of the inert gas supplied from the gas supply unit 73 to the processing liquid nozzle 71 is supplied to the nozzle gap 56 from a plurality of side surface injection ports 717 b (see FIG. 6) of the processing liquid nozzle 71.
- the inert gas from the gas supply unit 73 is supplied obliquely downward from the side surface of the processing liquid nozzle 71, flows downward, and is supplied to the processing space 90.
- the processing of the substrate 9 is preferably performed in a state where the processing space 90 is supplied with an inert gas from the processing liquid nozzle 71 and the processing space 90 is in an inert gas atmosphere.
- the gas supplied from the gas supply unit 73 to the processing space 90 is a processing atmosphere gas.
- the processing atmosphere gas includes a gas supplied from the processing liquid nozzle 71 to the nozzle gap 56 and supplied to the above-described lower space (that is, the processing space 90) through the nozzle gap 56.
- the inert gas supplied from the gas supply unit 73 to the first flow path 581 of the gas supply path 58 shown in FIGS. 3 and 4 spreads in the circumferential direction by the first manifold 582, and passes through the plurality of second flow paths 583.
- the inert gas also spreads in the circumferential direction in the second manifold 584 and is injected from the plurality of gas injection ports 585 toward the lower labyrinth 57 between the radial inner end and the radial outer end of the labyrinth 57. Is done.
- the nozzle gap 56 which is a space radially inward of the labyrinth 57, and the processing space 90 continuous to the nozzle gap 56 are formed in the labyrinth 57. It is sealed from the space outside in the radial direction. That is, the gas supplied from the gas supply unit 73 to the labyrinth 57 is a seal gas.
- the inert gas supplied to the labyrinth 57 from the plurality of gas injection ports 585 spreads radially outward and radially inward in the labyrinth 57.
- the inert gas that spreads inward in the radial direction in the labyrinth 57 is supplied from the labyrinth 57 to the nozzle gap 56 and is supplied to the above-described lower space (that is, the processing space 90) through the nozzle gap 56.
- the inert gas that spreads radially outward in the labyrinth 57 passes through the labyrinth 57, wraps around the opposing member flange portion 522, and reaches the top plate 5 from between the opposing member flange portion 522 and the flange support portion 613.
- On the upper surface that is, the upper surface of the opposing member main body 51).
- the gas supply unit 73 is a seal gas supply unit that is a supply source of the seal gas, and is also a process atmosphere gas supply unit that is a supply source of the process atmosphere gas.
- the gas injection port 585 shown in FIG. 3 is a sealing gas injection port and also a processing atmosphere gas injection port.
- the processing atmosphere gas and the seal gas are the same type of gas.
- the processing atmosphere gas and the seal gas may be different types of gases.
- the first manifold 582 and the second manifold 584 each have an annular shape for temporarily storing the seal gas between the gas supply unit 73, which is a seal gas supply unit, and the plurality of gas injection ports 585. It is a manifold.
- the substrate processing apparatus 1 further includes an ion generator 8.
- the ion generation unit 8 generates ions and supplies the ions to the inert gas from the gas supply unit 73.
- the ion generator 8 includes a discharge needle 81 that generates ions by performing discharge.
- the discharge needle 81 is disposed inside the holding portion main body 611.
- the discharge needle 81 is disposed in the vicinity of the gas injection port 585 inside the gas injection port 585.
- the discharge needle 81 is arranged in the second manifold 584 inside the holding part main body 611 and ionizes a part of the inert gas in the second manifold 584 supplied from the gas supply part 73.
- the number of discharge needles 81 provided in the ion generator 8 may be one or plural.
- the ion generating unit 8 includes a plurality of discharge needles 81, the plurality of discharge needles 81 are arranged, for example, at substantially equal angular intervals in the circumferential direction in the second manifold 584.
- the substrate 9 is carried into the housing 11 and held by the substrate holding part 31 (step S11). At this time, the top plate 5 is held by the facing member holding portion 61 of the facing member moving mechanism 6.
- the facing member holding portion 61 is moved downward by the facing member lifting mechanism 62.
- the top plate 5 moves downward from the first position, and is positioned below the position in step S11 (that is, the position when the substrate 9 is loaded).
- the top plate 5 moves from the first position to the second position, and is held by the substrate holder 31 as shown in FIG. 2 (step S12).
- a labyrinth 57 is formed between the top plate 5 and the opposing member holding portion 61.
- the gas supply unit 73 is controlled by the control unit 21 (see FIG. 5), so that an inert gas (that is, a processing atmosphere gas) with respect to the nozzle gap 56 and the processing space 90 is passed through the processing liquid nozzle 71.
- Supply is started.
- the supply of the inert gas (that is, the seal gas) to the labyrinth 57 is also started via the gas supply path 58 shown in FIG. 3 (step S13).
- the supply of the inert gas from the treatment liquid nozzle 71 and the supply of the inert gas to the labyrinth 57 are continued after step S13.
- control unit 21 controls the substrate rotation mechanism 33 shown in FIG. 2 to start the rotation of the substrate holding unit 31, the substrate 9, and the top plate 5 (step S14).
- control of the ion generation unit 8 is controlled by the control unit 21, whereby the generation of ions is started, and the supply of ions to the inert gas from the gas supply unit 73 is started (step S15).
- ions are supplied to the inert gas before being supplied from the gas injection port 585 to the labyrinth 57 by the ion generator 8 shown in FIG.
- the inert gas supplied from the gas injection port 585 to the labyrinth 57 includes the ions.
- Step S15 may be performed before step S14, or may be performed in parallel with steps S13 and S14.
- the substrate holding unit 31 and the top plate 5 are rotated while the top plate 5 is positioned at the second position, and the ions described above are included.
- a part of the inert gas is supplied to the central portion in the radial direction of the processing space 90 through the labyrinth 57 and the nozzle gap 56.
- an ion air flow (that is, a gas flow containing ions) is formed that spreads radially outward from the radial center of the processing space 90.
- the formation of the ion air current in the processing space 90 is performed before the processing of the substrate 9 by the processing liquid from the processing liquid supply unit 72 described later.
- the charged substrate 9 may be carried in.
- the substrate 9 is charged by performing a dry process such as dry etching or plasma CVD (Chemical Vapor Deposition) before carrying it into the substrate processing apparatus 1.
- a dry process such as dry etching or plasma CVD (Chemical Vapor Deposition)
- charges are generated in the device formed in advance on the upper surface 91 of the substrate 9 by the dry process.
- an ion stream is formed in the processing space 90 that is a space between the upper surface 91 of the substrate 9 and the lower surface of the top plate 5, so The already generated charge (so-called carry-in charge) of the substrate 9 is removed.
- step S16 carry-in charge removal processing (that is, charge removal processing) of the substrate 9 by an ion stream is performed for a predetermined time (step S16).
- step S16 when the lower surface of the top plate 5 shown in FIG. 3 is charged, the lower surface of the top plate 5 is also neutralized by the ion stream.
- the processing liquid nozzle 71 and the counter member cylinder 521 are charged, the processing liquid nozzle 71 and the counter member cylinder are generated by an inert gas containing ions flowing from the labyrinth 57 toward the processing space 90 through the nozzle gap 56.
- the static elimination at 521 is also performed.
- the nozzle gap 56 is sealed from the external space which is the space outside the radial direction of the labyrinth 57.
- the inert gas flowing radially outward in the labyrinth 57 is supplied from between the opposing member flange portion 522 and the flange support portion 613 toward the radial center of the upper surface of the top plate 5. It flows from the radial center to the radial outward along the upper surface of the.
- an inert gas containing ions that have flowed radially outward from the labyrinth 57 forms an upper ion stream that spreads radially outward from the radial center along the top surface of the top plate 5.
- the first processing liquid is supplied from the processing liquid supply unit 72 to the processing liquid nozzle 71, and the opening of the opposing member of the top plate 5 located at the second position shown in FIG. Through 54, it is supplied to the central portion of the upper surface 91 of the rotating substrate 9 (step S17).
- the first processing liquid supplied from the processing liquid nozzle 71 to the central portion of the substrate 9 spreads radially outward from the central portion of the substrate 9 by the rotation of the substrate 9 and is applied to the entire upper surface 91 of the substrate 9. .
- the first processing liquid scatters radially outward from the outer edge of the substrate 9 and is received by the first guard 41 of the cup portion 4. The vertical position of the first guard 41 shown in FIG.
- the second is a position for receiving the processing liquid from the substrate 9 and is referred to as a “liquid receiving position” in the following description.
- the first processing liquid is, for example, a chemical liquid such as a polymer removal liquid or an etching liquid, and the chemical liquid processing is performed on the substrate 9 in step S17. While the substrate 9 is being processed with the first processing liquid, the supply of the inert gas including ions to the labyrinth 57, the nozzle gap 56, and the processing space 90 is continued.
- the guard moving mechanism 43 moves the first guard 41 in the vertical direction between the liquid receiving position and the retracted position, so that the guard that receives the processing liquid from the substrate 9 is the first guard 41 and the second guard 42. It is a guard switching mechanism which switches between.
- the second processing liquid is supplied from the processing liquid supply unit 72 to the processing liquid nozzle 71, and the upper surface 91 of the rotating substrate 9 is passed through the opposing member opening 54 of the top plate 5 located at the second position.
- the second processing liquid supplied from the processing liquid nozzle 71 to the central portion of the substrate 9 spreads radially outward from the central portion of the substrate 9 by the rotation of the substrate 9 and is applied to the entire upper surface 91 of the substrate 9. .
- the second processing liquid scatters radially outward from the outer edge of the substrate 9 and is received by the second guard 42 of the cup portion 4.
- the second processing liquid is, for example, a cleaning liquid such as pure water or carbonated water, and the cleaning process for the substrate 9 is performed in step S18.
- the supply of the inert gas including ions to the labyrinth 57, the nozzle gap 56, and the processing space 90 is continued while the substrate 9 is being processed with the second processing liquid.
- step S19 since the top plate 5 and the substrate 9 rotate at high speed, the top plate 5 and the substrate 9 are charged by friction between the top plate 5 and the substrate 9 and air.
- the formation of the ion air flow in the processing space 90 described above is continuously performed even during the drying process in step S19. Thereby, the charge removal of the lower surface of the top plate 5 and the upper surface 91 of the substrate 9 is performed.
- the formation of the upper ion stream along the upper surface of the top plate 5 is also continuously performed during the drying process in step S19. Thereby, the charge removal of the upper surface of the top plate 5 is performed.
- the rotating counter member cylinder 521 is also charged by friction with air. Further, a circumferential air flow is generated in the nozzle gap 56 by the rotation of the opposing member cylinder 521, and the treatment liquid nozzle 71 is also charged by friction with the air flow.
- the counter member cylindrical portion 521 and the processing liquid nozzle 71 are neutralized by an inert gas containing ions flowing from the labyrinth 57 to the processing space 90.
- the top plate 5, the substrate 9, and the processing liquid nozzle 71 are neutralized in parallel with the drying process of the substrate 9 in step S19.
- the neutralization process of the top plate 5, the substrate 9 and the processing liquid nozzle 71 in step S19 is only to remove the charge of the top plate 5, the substrate 9 and the processing liquid nozzle 71 by supplying an inert gas containing ions. It also includes prevention or suppression so that the charging does not occur.
- the charge removal process is continuously performed, for example, until the drying process of the substrate 9 is completed, and is terminated simultaneously with the completion of the drying process.
- step S20 When the drying process of the substrate 9 is completed, the rotation of the substrate holding unit 31, the substrate 9 and the top plate 5 by the substrate rotating mechanism 33 is stopped (step S20). Further, the supply of the inert gas from the gas supply unit 73 to the nozzle gap 56, the processing space 90, and the labyrinth 57 is stopped. Further, the generation of ions by the ion generator 8 and the supply of ions to the inert gas are also stopped (step S21). Next, when the opposing member holding portion 61 is moved upward by the opposing member lifting mechanism 62, the top plate 5 is moved upward from the second position to the first position shown in FIG. 1 (step S22). .
- the top plate 5 is spaced apart upward from the substrate holding part 31 and is held by the counter member holding part 61. Thereafter, the substrate 9 is unloaded from the housing 11 (step S23).
- the above-described steps S11 to S23 are sequentially performed on the plurality of substrates 9, and the plurality of substrates 9 are sequentially processed.
- the substrate processing apparatus 1 includes the substrate holding unit 31, the substrate rotating mechanism 33, the top plate 5, the processing liquid supply unit 72, the gas supply unit 73, the ion generation unit 8, and the control. Part 21.
- the substrate holding unit 31 holds the substrate 9 in a horizontal state.
- the substrate rotation mechanism 33 rotates the substrate holding part 31 about the central axis J1 that faces in the up-down direction.
- the top plate 5 faces the upper surface of the substrate 9 and rotates about the central axis J1.
- the processing liquid supply unit 72 supplies the processing liquid to the upper surface 91 of the substrate 9.
- the gas supply unit 73 supplies the processing atmosphere gas to the central portion in the radial direction of the lower space, which is the space below the top plate 5.
- the ion generator 8 generates ions and supplies them to the processing atmosphere gas from the gas supply unit 73.
- the control unit 21 controls the substrate rotation mechanism 33, the gas supply unit 73, and the ion generation unit 8 so that the substrate holding unit 31 and the top plate 5 are in a state where the top plate 5 is positioned lower than when the substrate 9 is loaded.
- the process atmosphere gas containing ions is supplied to the lower space to form an ion stream that spreads radially outward from the radial center of the lower space.
- the top plate 5 can be neutralized with a simple structure as compared with the case where the top plate is neutralized by irradiating the top plate with X-rays. As a result, particles and the like can be prevented from adhering to the top plate 5. In addition, it is possible to prevent discharge from occurring between the top plate 5 and the substrate 9. Furthermore, since the said discharge can be prevented, there is no possibility that supply of the combustible chemical
- the top plate 5 is brought close to the substrate holding unit 31, so that the lower space can be reduced and the amount of processing atmosphere gas containing ions supplied to the lower space can be reduced. Further, by rotating the top plate 5 and the substrate holding part 31, the processing atmosphere gas containing ions supplied to the lower space is substantially uniformly distributed radially outward from the radial center of the lower space, and Can be expanded quickly. Thereby, the quantity of the gas for process atmospheres required when forming an ion air current can further be reduced. As a result, the top plate 5 can be neutralized while reducing the amount of processing atmosphere gas used.
- the lower space where the ion airflow is formed is the processing space 90 which is a space between the lower surface of the top plate 5 and the upper surface 91 of the substrate 9. Formation of the ion air flow in the processing space 90 is performed during the drying process (step S19) in which the processing liquid from the processing liquid supply unit 72 is removed from the substrate 9 by the rotation of the substrate 9 by the substrate rotating mechanism 33. As a result, the top plate 5 and the substrate 9 can be neutralized during the drying process.
- the formation of the ion air flow in the processing space 90 is also performed before the processing of the substrate 9 by the processing liquid from the processing liquid supply unit 72 (Step S17).
- the top plate 5 and the substrate 9 can be neutralized before the processing liquid is supplied to the substrate 9.
- the processing supplied onto the substrate 9 due to the charging is performed. It is possible to prevent or suppress the occurrence of discharge between the liquid and the substrate 9. As a result, damage or the like of the substrate 9 due to discharge between the processing liquid and the substrate 9 can be prevented or suppressed.
- the formation of an ion stream before the processing of the substrate 9 with the processing liquid is performed using the processing atmosphere gas supplied to the processing space 90 when the substrate 9 is processed with the processing liquid.
- the gas supplied to the processing space 90 in the static elimination process step S16) before the treatment with the treatment liquid and the treatment space 90 during the treatment with the treatment liquid after the static elimination process (step S17).
- the process of switching the gas supplied to the processing space 90 between Step S16 and Step S17 becomes unnecessary. As a result, it is possible to suppress an increase in the processing time of the substrate 9 due to the charge removal process in step S16.
- the substrate processing apparatus 1 further includes a counter member moving mechanism 6.
- the facing member moving mechanism 6 holds the top plate 5 and moves the top plate 5 relative to the substrate holding portion 31 between a first position and a second position in the vertical direction.
- the top plate 5 is held by the facing member moving mechanism 6 at the first position and is spaced upward from the substrate holding portion 31.
- the top plate 5 is held by the substrate holder 31 at the second position, and is rotated together with the substrate holder 31 by the substrate rotation mechanism 33.
- the top plate 5 is separated from the opposing member moving mechanism 6 when the top plate 5 is rotated, it is difficult to perform static elimination by grounding the top plate 5 through the opposing member moving mechanism 6. .
- ion flow is formed in the lower space located below the top plate 5, so that the top plate 5 rotating together with the substrate holder 31 can be easily removed by the substrate rotation mechanism 33. It can be carried out. Further, in the substrate processing apparatus 1, it is not necessary to provide a mechanism for rotating the top plate 5 separately from the substrate rotation mechanism 33, so that the apparatus structure can be simplified.
- the top plate 5 includes a counter member main body 51 and a counter member cylinder 521.
- the facing member main body 51 faces the upper surface 91 of the substrate 9.
- a counter member opening 54 is provided in the radial center of the counter member main body 51.
- the opposing member cylinder 521 is a cylindrical portion that protrudes upward from the periphery of the opposing member opening 54 of the opposing member main body 51.
- the processing liquid supply unit 72 includes a processing liquid nozzle 71. The processing liquid nozzle 71 is inserted into the counter member cylinder 521 and supplies the processing liquid to the upper surface 91 of the substrate 9 through the counter member opening 54.
- the gas for process atmosphere containing an ion is supplied to the above-mentioned lower space through the nozzle gap
- interval 56 which is the space between the process liquid nozzle 71 and the opposing member cylinder part 521.
- the processing liquid nozzle 71 can be neutralized by using the processing atmosphere gas containing ions flowing through the nozzle gap 56.
- the charge removal of the opposing member cylinder part 521 can also be performed.
- the top plate 5 further includes the opposing member flange portion 522.
- the opposing member flange portion 522 extends in an annular shape radially outward from the upper end portion of the opposing member cylinder portion 521 and is held by the opposing member moving mechanism 6.
- a labyrinth 57 continuous to the nozzle gap 56 is formed on the upper surface of the facing member flange portion 522.
- the nozzle gap 56 is sealed from the external space, and from the radial center to the radial outward along the upper surface of the top plate 5.
- a spreading upper ion stream is formed. Thereby, the charge removal of the upper surface of the top plate 5 can also be performed.
- the ion generator 8 includes a discharge needle 81 that generates ions by performing discharge.
- the top plate 5 further includes first uneven portions in which concave portions and convex portions are alternately arranged concentrically on the upper surface of the opposing member flange portion 522.
- the facing member moving mechanism 6 includes a flange support portion 613, a holding portion main body 611, and a second uneven portion 615.
- the flange support portion 613 faces the lower surface of the facing member flange portion 522 in the vertical direction.
- the holding portion main body 611 faces the upper surface of the facing member flange portion 522 in the up-down direction.
- the concave portions and the convex portions are alternately arranged concentrically on the lower surface of the holding portion main body 611. Then, in the state where the top plate 5 is located at the second position, the other convex portion is disposed through the gap in one concave portion of the first concave and convex portion 55 and the second concave and convex portion 615, whereby the labyrinth 57 Is formed. Further, the discharge needle 81 is disposed inside the gas injection port 585 for the processing atmosphere gas formed on the upper surface of the concave portion of the second uneven portion 615.
- the discharge needle 81 by disposing the discharge needle 81 in the vicinity of the gas injection port 585, the gas for the processing atmosphere containing ions is supplied to the nozzle gap 56, the processing space 90, and the top plate 5 while suppressing the time-dependent decrease of ions. It can be supplied on the top surface. As a result, neutralization of the counter member cylinder 521 and the treatment liquid nozzle 71, neutralization of the upper and lower surfaces of the top plate 5, and neutralization of the upper surface 91 of the substrate 9 can be efficiently performed.
- the charge removal by the ion airflow does not necessarily have to be performed before the processing of the substrate 9 with the processing liquid (step S ⁇ b> 16) and in parallel with the drying processing of the substrate 9 (step S ⁇ b> 19).
- the substrate processing apparatus for example, only one of the charge removal processes of Step S ⁇ b> 16 and Step S ⁇ b> 19 may be performed.
- the static elimination process of step S16 and step S19 may not be performed, but the static elimination by ion airflow may be performed in another state.
- the control unit 21 controls the substrate rotation mechanism 33, the gas supply unit 73, and the ion generation unit 8 in a state where the substrate 9 is not loaded (that is, a state where the substrate holding unit 31 does not hold the substrate 9).
- the top plate 5 and the substrate holding part 31 may be neutralized.
- ions are included while rotating the substrate holding portion 31 and the top plate 5 in a state where the top plate 5 is positioned at the second position (that is, a state positioned lower than when the substrate 9 is loaded).
- a processing atmosphere gas is supplied to the radial center of the space below the top plate 5.
- the lower space which is a space between the top plate 5 and the substrate holding part 31
- an ion air current that spreads from the radial center to the radial outward is formed.
- the charge removal is performed, for example, during maintenance of the substrate processing apparatus 1 or immediately before the substrate 9 is carried into the substrate processing apparatus 1.
- FIG. 9 is an enlarged cross-sectional view showing a part of the top plate 5 and the opposed member moving mechanism 6 as in FIG. 3 (the same applies to FIG. 10 described later).
- a surface 553 that faces a plurality of gas injection ports 585 is an inclined surface that goes downward as it goes radially outward. More specifically, among the first concavo-convex portions 55 of the top plate 5, the radially outer side surface 553 of one annular convex portion 552 positioned below the plurality of gas injection ports 585 is directed radially outward. It is an inclined surface heading downward.
- the inert gas that is, the seal gas
- the inert gas containing the ions injected into the labyrinth 57a from the plurality of gas injection ports 585 is easily guided radially outward along the side surface 553 that is the inclined surface. Can do.
- the inert gas injected from each gas injection port 585 to the side surface 553 spreads in the circumferential direction, the inert gas is supplied to the region between the plurality of gas injection ports 585 in the labyrinth 57a approximately uniformly. Can do.
- the uniformity of the pressure of the inert gas in the circumferential direction can be improved. Furthermore, the uniformity in the circumferential direction of the flow rate of the inert gas in the labyrinth 57a can be further improved.
- the generation of ions by the ion generator 8 may be stopped.
- the gas for processing atmosphere substantially free of ions from the ion generator 8 is supplied to the nozzle gap 56, the processing space 90, and the labyrinths 57 and 57a.
- the gas for processing atmosphere including ions supplied to the nozzle gap 56, the processing space 90, and the labyrinths 57, 57a during the static elimination processing in step S16 is the nozzle gap 56, the processing space 90, and the labyrinth 57 in steps S17, S18.
- 57a may be a different type of gas from the processing atmosphere gas.
- the discharge needle 81 of the ion generating unit 8 may be disposed at a site other than the inside of the holding unit main body 611.
- the discharge needle 81 is provided in the processing liquid nozzle 71 or on the flow path between the processing liquid nozzle 71 and the gas supply unit 73, and the discharge needle 81 causes the processing space 90 and Alternatively, ions may be supplied to the processing atmosphere gas supplied to the nozzle gap 56.
- the ion generator 8 may include various ion generation mechanisms other than the discharge needle 81.
- the ion generator 8 does not necessarily need to ionize part of the processing atmosphere gas supplied from the gas supply unit 73.
- a gas supplied from a supply unit different from the gas supply unit 73 may be ionized, and the ionized gas may be supplied to the processing atmosphere gas from the gas supply unit 73.
- the gas ionized by the ion generator 8 may be a different type of gas from the processing atmosphere gas or the same type of gas.
- the labyrinths 57 and 57 a are not necessarily formed between the opposing member flange portion 522 of the top plate 5 and the holding portion main body 611 of the opposing member holding portion 61.
- the shape and arrangement of the labyrinths 57 and 57a may be variously changed. For example, in a state where the top plate 5 is held by the substrate holding unit 31 at the second position, the counter member holding unit 61 is retracted from the top plate 5 and the processing liquid nozzle moved by the nozzle moving mechanism is the top plate. 5, the counter member flange portion is formed by the circumferential uneven portion provided around the upper end portion of the processing liquid nozzle and the first uneven portion 55 of the top plate 5.
- a labyrinth may be formed on the top surface of 522.
- the labyrinths 57 and 57 a are not necessarily formed only when the top plate 5 is located at the second position, and may be provided regardless of the position of the top plate 5.
- the upper ion stream that spreads along the top surface of the top plate 5 does not necessarily have to be formed, such as when the necessity for static elimination on the top surface of the top plate 5 is not so high.
- the gas in the labyrinth 57b is sucked into the holding portion main body 611 of the facing member holding portion 61 at the radially outer end portion of the labyrinth 57b (that is, the end portion on the external space side).
- a plurality of gas suction ports 591 may be provided.
- the plurality of gas suction ports 591 are arranged in the circumferential direction at substantially equal angular intervals on the upper surface of one concave portion (that is, the bottom surface of the concave portion) at the radially outer end portion of the second uneven portion 615.
- the plurality of gas suction ports 591 are connected to a suction unit (not shown) via a suction path 592 formed inside the facing member holding unit 61.
- the plurality of gas suction ports 591 are circumferential suction ports arranged circumferentially around the central axis J1 at the radially outer end of the labyrinth 57b. By driving the suction part, the gas in the labyrinth 57b is sucked through the circumferential suction port.
- the labyrinth 57b it is possible to prevent the atmosphere of the external space from entering inward in the radial direction from the plurality of gas suction ports 591. Further, the inert gas (that is, the seal gas) supplied from the plurality of gas injection ports 585 into the labyrinth 57b can be more easily guided radially outward. As a result, it is possible to further suppress the atmosphere of the external space from entering the labyrinth 57b.
- one substantially annular suction port centering on the central axis J1 may be provided as a circumferential suction port instead of the plurality of gas suction ports 591.
- the circumferential suction port provided in the labyrinth 57b may also be provided in the labyrinth 57a shown in FIG.
- the processing atmosphere gas may not be ejected from the side surface of the processing liquid nozzle 71.
- a mechanism for rotating the top plate 5 may be provided separately from the substrate rotation mechanism 33.
- the top plate 5 does not necessarily have to be positioned at the second position, but is in a state of being positioned lower than when the substrate 9 is loaded (that is, in a state of being positioned lower than the position in step S11). ).
- the processing atmosphere gas containing ions is supplied to the central portion in the radial direction of the space below the top plate 5 while rotating the substrate holding portion 31 and the top plate 5.
- the ion air current which spreads from the radial direction center part of downward space to radial direction outward is formed.
- the static elimination of the top plate 5 and the substrate 9 or the static elimination of the top plate 5 and the substrate holding unit 31 can be performed with a simple structure while reducing the amount of processing atmosphere gas used. it can.
- the nozzle gap 56 and the labyrinths 57, 57a, 57b are not necessarily provided.
- the processing liquid nozzle 71 is fixed to the top plate 5 without a gap on the side, and the top plate 5 You may rotate with.
- the supply of the processing atmosphere gas to the lower space of the top plate 5 is performed only from the lower end surface of the processing liquid nozzle 71, for example.
- the ion generation unit 8 is provided in the processing liquid nozzle 71 or on the flow path between the processing liquid nozzle 71 and the gas supply unit 73, and is supplied to the lower space from the lower end surface of the processing liquid nozzle 71. Ions are supplied to the processing atmosphere gas.
Abstract
Description
5 トッププレート
6 対向部材移動機構
8 イオン発生部
9 基板
21 制御部
31 基板保持部
33 基板回転機構
51 対向部材本体
54 対向部材開口
55 第1凹凸部
56 ノズル間隙
57,57a,57b ラビリンス
71 処理液ノズル
72 処理液供給部
73 ガス供給部
81 放電針
90 処理空間
91 (基板の)上面
521 対向部材筒部
522 対向部材フランジ部
585 ガス噴射口
611 保持部本体
613 フランジ支持部
615 第2凹凸部
J1 中心軸
S11~S23 ステップ
Claims (15)
- 基板を処理する基板処理装置であって、
水平状態で基板を保持する基板保持部と、
上下方向を向く中心軸を中心として前記基板保持部を回転する基板回転機構と、
前記基板の上面に対向するとともに前記中心軸を中心として回転する対向部材と、
前記基板の前記上面に処理液を供給する処理液供給部と、
前記対向部材の下方の空間である下方空間の径方向中央部に処理雰囲気用ガスを供給するガス供給部と、
イオンを生成して前記ガス供給部からの前記処理雰囲気用ガスに供給するイオン発生部と、
前記基板回転機構、前記ガス供給部および前記イオン発生部を制御することにより、前記対向部材が前記基板の搬入時よりも下方に位置する状態で前記基板保持部および前記対向部材を回転させつつ、前記イオンを含む前記処理雰囲気用ガスを前記下方空間に供給し、前記下方空間の径方向中央部から径方向外方へと拡がるイオン気流を形成する制御部と、
を備える。 - 請求項1に記載の基板処理装置であって、
前記イオン気流が形成される前記下方空間が、前記対向部材の下面と前記基板の前記上面との間の空間である処理空間であり、
前記イオン気流の形成が、前記基板回転機構による前記基板の回転により前記処理液供給部からの前記処理液を前記基板上から除去する乾燥処理時に行われる。 - 請求項1または2に記載の基板処理装置であって、
前記イオン気流が形成される前記下方空間が、前記対向部材の下面と前記基板の前記上面との間の空間である処理空間であり、
前記イオン気流の形成が、前記処理液供給部からの前記処理液による前記基板の処理よりも前に行われる。 - 請求項3に記載の基板処理装置であって、
前記処理液による前記基板の処理前における前記イオン気流の形成が、前記処理液による前記基板の処理時に供給される前記処理雰囲気用ガスを利用して行われる。 - 請求項1ないし4のいずれかに記載の基板処理装置であって、
前記対向部材を保持し、前記対向部材を上下方向の第1の位置と第2の位置との間で前記基板保持部に対して相対的に移動する対向部材移動機構をさらに備え、
前記対向部材は、前記第1の位置にて前記対向部材移動機構により保持されるとともに前記基板保持部から上方に離間し、前記第2の位置にて前記基板保持部により保持され、前記基板回転機構により前記基板保持部と共に回転する。 - 請求項5に記載の基板処理装置であって、
前記対向部材が、
前記基板の前記上面に対向するとともに径方向中央部に対向部材開口が設けられる対向部材本体と、
前記対向部材本体の前記対向部材開口の周囲から上方に突出する筒状の対向部材筒部と、
を備え、
前記処理液供給部が、前記対向部材筒部に挿入されて前記対向部材開口を介して前記基板の前記上面に前記処理液を供給する処理液ノズルを備え、
前記イオンを含む前記処理雰囲気用ガスが、前記処理液ノズルと前記対向部材筒部との間の空間であるノズル間隙を介して前記下方空間に供給される。 - 請求項6に記載の基板処理装置であって、
前記対向部材が、前記対向部材筒部の上端部から径方向外方に環状に広がるとともに前記対向部材移動機構に保持される対向部材フランジ部をさらに備え、
前記対向部材が前記第2の位置に位置する状態で、前記ノズル間隙に連続するラビリンスが、前記対向部材フランジ部の上面上に形成され、
前記イオンを含む前記処理雰囲気用ガスが前記ラビリンスに供給されることにより、前記ノズル間隙が外部空間からシールされるとともに、前記ラビリンスから流れ出た前記イオンを含む前記処理雰囲気用ガスにより、前記対向部材の上面に沿って径方向中央部から径方向外方へと拡がる上部イオン気流が形成される。 - 請求項7に記載の基板処理装置であって、
前記イオン発生部が、放電を行うことにより前記イオンを生成する放電針を備え、
前記対向部材が、前記対向部材フランジ部の前記上面において凹部と凸部とが同心円状に交互に配置される第1凹凸部をさらに備え、
前記対向部材移動機構が、
前記対向部材フランジ部の下面と前記上下方向に対向する保持部下部と、
前記対向部材フランジ部の前記上面と前記上下方向に対向する保持部上部と、
前記保持部上部の下面において凹部と凸部とが同心円状に交互に配置される第2凹凸部と、
を備え、
前記対向部材が前記第2の位置に位置する状態で、前記第1凹凸部および前記第2凹凸部の一方の凹部内に他方の凸部が間隙を介して配置されることにより前記ラビリンスが形成され、
前記放電針が、前記保持部上部の内部において、前記第2凹凸部の凹部上面に形成された前記処理雰囲気用ガスの噴射口の内側に配置される。 - 水平状態で基板を保持する基板保持部と、上下方向を向く中心軸を中心として前記基板保持部を回転する基板回転機構と、前記基板の上面に対向するとともに前記中心軸を中心として回転する対向部材と、前記基板の前記上面に処理液を供給する処理液供給部と、前記対向部材の下方の空間である下方空間の径方向中央部に処理雰囲気用ガスを供給するガス供給部と、を備える基板処理装置において基板を処理する基板処理方法であって、
a)前記基板を搬入して前記基板保持部により保持する工程と、
b)前記対向部材を下方に移動し、前記a)工程における位置よりも下方に位置させる工程と、
c)前記b)工程よりも後に、前記基板保持部および前記対向部材を回転させつつ、イオンを生成して前記ガス供給部からの前記処理雰囲気用ガスに供給し、前記イオンを含む前記処理雰囲気用ガスを前記下方空間に供給し、前記下方空間の径方向中央部から径方向外方へと拡がるイオン気流を形成する工程と、
を備える。 - 請求項9に記載の基板処理方法であって、
前記イオン気流が形成される前記下方空間が、前記対向部材の下面と前記基板の前記上面との間の空間である処理空間であり、
d)前記処理液供給部から前記基板の前記上面上に前記処理液を供給する工程をさらに備え、
前記c)工程が、前記d)工程にて前記基板上に供給された前記処理液を、前記基板回転機構による回転により前記基板上から除去する乾燥処理時に行われる。 - 請求項10に記載の基板処理方法であって、
前記c)工程が、前記d)工程よりも前にも行われる。 - 請求項9に記載の基板処理方法であって、
前記イオン気流が形成される前記下方空間が、前記対向部材の下面と前記基板の前記上面との間の空間である処理空間であり、
d)前記処理液供給部から前記基板の前記上面上に前記処理液を供給する工程をさらに備え、
前記c)工程が、前記d)工程よりも前に行われる。 - 請求項11または12に記載の基板処理方法であって、
前記d)工程よりも前に行われる前記c)工程における前記イオン気流の形成が、前記d)工程において前記ガス供給部から供給される前記処理雰囲気用ガスを利用して行われる。 - 請求項9ないし13のいずれかに記載の基板処理方法であって、
前記b)工程において、前記対向部材が前記基板保持部により保持され、
前記c)工程において、前記基板回転機構により前記対向部材が前記基板保持部と共に回転される。 - 請求項9ないし14のいずれかに記載の基板処理方法であって、
前記c)工程と並行して、前記イオンを含む前記処理雰囲気用ガスを前記対向部材の上面に向かって供給し、前記対向部材の前記上面に沿って径方向中央部から径方向外方へと拡がる上部イオン気流を形成する工程をさらに備える。
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