WO2017110202A1 - Ruban pour usinage de semi-conducteur - Google Patents

Ruban pour usinage de semi-conducteur Download PDF

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Publication number
WO2017110202A1
WO2017110202A1 PCT/JP2016/079626 JP2016079626W WO2017110202A1 WO 2017110202 A1 WO2017110202 A1 WO 2017110202A1 JP 2016079626 W JP2016079626 W JP 2016079626W WO 2017110202 A1 WO2017110202 A1 WO 2017110202A1
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WO
WIPO (PCT)
Prior art keywords
adhesive layer
metal layer
resin
semiconductor processing
semiconductor
Prior art date
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PCT/JP2016/079626
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English (en)
Japanese (ja)
Inventor
真沙美 青山
佐野　透
Original Assignee
古河電気工業株式会社
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Publication date
Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to MYPI2017001618A priority Critical patent/MY184346A/en
Priority to CN201680032247.9A priority patent/CN107614641B/zh
Priority to JP2017557750A priority patent/JP6757743B2/ja
Priority to SG11201708850VA priority patent/SG11201708850VA/en
Priority to KR1020177034527A priority patent/KR102580602B1/ko
Publication of WO2017110202A1 publication Critical patent/WO2017110202A1/fr
Priority to PH12017502122A priority patent/PH12017502122B1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C09J133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J171/00—Adhesives based on polyethers obtained by reactions forming an ether link in the main chain; Adhesives based on derivatives of such polymers
    • C09J171/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C09J171/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C09J171/12—Polyphenylene oxides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J175/00—Adhesives based on polyureas or polyurethanes; Adhesives based on derivatives of such polymers
    • C09J175/04—Polyurethanes
    • C09J175/14—Polyurethanes having carbon-to-carbon unsaturated bonds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/28—Metal sheet
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Definitions

  • the present invention relates to a semiconductor processing tape, and more particularly to a semiconductor processing tape having a metal layer for protecting the back surface of a semiconductor chip mounted in a face-down manner.
  • the back surface of the semiconductor chip may be protected by a semiconductor processing tape to prevent the semiconductor chip from being damaged (see Patent Document 1). Furthermore, it is also known that a single-sided adhesive film composed of a metal layer and an adhesive layer is attached to a semiconductor element via an adhesive layer (see Patent Document 2).
  • solder bump or the like formed on the surface of a semiconductor chip to which a semiconductor processing tape is bonded is immersed in a flux, and then an electrode formed on the bump and the substrate (if necessary, this The solder bump is also formed on the electrode), and finally the solder bump is melted to reflow-connect the solder bump and the electrode.
  • Flux is used for the purpose of cleaning solder bumps during soldering, preventing oxidation, improving solder wettability, and the like.
  • an adhesive layer and a protective layer laminated on the adhesive layer can be used as a semiconductor processing tape capable of preventing the occurrence of spots even when flux is attached and capable of producing a semiconductor device having excellent appearance.
  • a film for flip-chip type semiconductor back surface in which the protective layer is made of a heat-resistant resin or metal having a glass transition temperature of 200 ° C. or higher has been proposed (see Patent Document 3).
  • JP 2007-158026 A Japanese Patent Laid-Open No. 2007-233502 JP 2012-033626 A
  • the protective film is formed by curing a resin containing a radiation curable component or a thermosetting component with radiation or heat as in Patent Document 1
  • the difference in thermal expansion coefficient between the cured protective film and the semiconductor wafer is Due to the large size, there is a problem that warpage occurs in a semiconductor wafer or semiconductor chip in the middle of processing.
  • Patent Document 3 discloses a flip chip type semiconductor backside film in which a protective layer and an adhesive layer are provided on an adhesive layer of a dicing tape in which an adhesive layer is laminated on a base material.
  • a dicing tape-integrated flip chip type semiconductor back film is used, the adhesive force between the protective layer and the pressure-sensitive adhesive layer is not sufficient, and when dicing the semiconductor wafer into chips, There was a problem that peeling occurred between the protective layer and the pressure-sensitive adhesive layer, and the semiconductor wafer could not be separated into good pieces.
  • an object of the present invention is to provide a semiconductor processing tape that can satisfactorily divide a semiconductor wafer during dicing and prevent package cracks during packaging. .
  • a semiconductor processing tape includes a dicing tape having a base film and an adhesive layer, a metal layer provided on the adhesive layer, and the metal layer.
  • An adhesive layer for adhering the metal layer to the back surface of the semiconductor chip, and a surface roughness RzJIS according to a ten-point average roughness of the metal layer is 0.5 ⁇ m or more and less than 10.0 ⁇ m It is characterized by being.
  • the metal layer is preferably a copper foil.
  • the adhesive layer contains (A) an epoxy resin, (B) a curing agent, (C) a phenoxy resin, and (D) a surface-treated inorganic filler.
  • the content of D) is preferably 40% by weight or more and 65% by weight or less based on the total of the above (A) to (D).
  • the semiconductor wafer can be favorably singulated during dicing, and package cracks can be prevented from occurring during packaging.
  • FIG. 1 is a cross-sectional view showing a semiconductor processing tape 10 according to an embodiment of the present invention.
  • This semiconductor processing tape 10 has a dicing tape 13 composed of a base film 11 and an adhesive layer 12 provided on the base film 11.
  • a semiconductor chip C On the adhesive layer 12, a semiconductor chip C ( The metal layer 14 for protecting (refer FIG. 2) and the adhesive bond layer 15 provided on the metal layer 14 are provided.
  • the surface of the adhesive layer 15 opposite to the surface in contact with the metal layer 14 is preferably protected by a separator (release liner) (not shown).
  • the separator has a function as a protective material that protects the adhesive layer 15 until it is put to practical use.
  • a separator can be used as a support base material at the time of bonding the metal layer 14 to the adhesive layer 12 of the dicing tape 13 in the manufacturing process of the semiconductor processing tape 10.
  • the dicing tape 13, the metal layer 14, and the adhesive layer 15 may be cut (precut) into a predetermined shape in advance according to the use process and the apparatus. Further, the semiconductor processing tape 10 of the present invention may be in a form cut for every one semiconductor wafer W, or a long sheet in which a plurality of pieces cut for every one semiconductor wafer W are formed. May be wound into a roll. Each component will be described below.
  • the base film 11 can be used without particular limitation as long as it is a conventionally known one, but when using a radiation curable material as the pressure-sensitive adhesive layer 12 described later, it has radiation transparency. It is preferable to use one.
  • the materials include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic.
  • Homopolymers or copolymers of ⁇ -olefins such as methyl acid copolymers, ethylene-acrylic acid copolymers, ionomers or mixtures thereof, polyurethane, styrene-ethylene-butene or pentene copolymers, polyamide-polyols Listed are thermoplastic elastomers such as copolymers, and mixtures thereof.
  • the base film 11 may be a mixture of two or more materials selected from these groups, or may be a single layer or a multilayer.
  • the thickness of the base film 11 is not particularly limited and may be set as appropriate, but is preferably 50 to 200 ⁇ m.
  • the surface of the base film 11 is subjected to chemical or physical treatment such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, and ionizing radiation treatment.
  • chemical or physical treatment such as chromic acid treatment, ozone exposure, flame exposure, high piezoelectric impact exposure, and ionizing radiation treatment.
  • Surface treatment may be applied.
  • the pressure-sensitive adhesive layer 12 is provided directly on the base film 11, but a primer layer for improving adhesion, an anchor layer for improving machinability during dicing, stress You may provide indirectly through a relaxation layer, an antistatic layer, etc.
  • the resin used for the pressure-sensitive adhesive layer 12 is not particularly limited, and a known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin, or the like used for the pressure-sensitive adhesive may be used.
  • An acrylic pressure-sensitive adhesive having an acrylic polymer as a base polymer is preferable.
  • acrylic polymer examples include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Pentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, A linear or branched alkyl ester of an alkyl group such as octadecyl ester or eicosyl ester having 1 to 30 carbon atoms,
  • the acrylic polymer contains units corresponding to other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance and the like. May be.
  • Such monomer components include, for example, carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate; Styrene Contains sulfonic acid groups such as phonic acid, allyl sulf
  • a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary.
  • examples of such polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) An acrylate etc. are mentioned. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably
  • the acrylic polymer can be prepared, for example, by applying an appropriate method such as a solution polymerization method, an emulsion polymerization method, a bulk polymerization method, or a suspension polymerization method to a mixture of one or more component monomers.
  • the pressure-sensitive adhesive layer 12 preferably has a composition that suppresses the inclusion of a low molecular weight substance from the viewpoint of preventing contamination of the wafer. From this point, the main component is an acrylic polymer having a weight average molecular weight of 300,000 or more, particularly 400,000 to 3,000,000. Therefore, the pressure-sensitive adhesive can be of an appropriate crosslinking type by an internal crosslinking method, an external crosslinking method, or the like.
  • a polyfunctional isocyanate compound for example, a polyfunctional epoxy compound, a melamine compound, a metal salt compound, a metal chelate compound, an amino resin system
  • an appropriate external crosslinking agent such as a compound or a peroxide, or a method of mixing a low molecular compound having two or more carbon-carbon double bonds and crosslinking by irradiation with energy rays, etc.
  • a suitable method such as the above can be adopted.
  • the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive.
  • additives such as various tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive in addition to the above components.
  • a radiation curable pressure-sensitive adhesive is suitable.
  • the radiation-curable pressure-sensitive adhesive include additive-type radiation-curable pressure-sensitive adhesives in which a radiation-curable monomer component or a radiation-curable oligomer component is blended with the above-mentioned pressure-sensitive adhesive.
  • Examples of the radiation curable monomer component to be blended include urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra ( And (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, and the like. These monomer components can be used alone or in combination of two or more.
  • the radiation curable oligomer component includes various oligomers such as urethane, polyether, polyester, polycarbonate, and polybutadiene, and those having a molecular weight in the range of about 100 to 30000 are suitable.
  • the compounding amount of the radiation-curable monomer component or oligomer component can be appropriately determined in accordance with the type of the pressure-sensitive adhesive layer, and the amount capable of reducing the adhesive strength of the pressure-sensitive adhesive layer. Generally, the amount is, for example, about 5 to 500 parts by weight, preferably about 70 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.
  • the radiation curable pressure-sensitive adhesive in addition to the additive-type radiation curable pressure-sensitive adhesive, a base polymer having a carbon-carbon double bond in the polymer side chain or in the main chain or at the main chain terminal was used.
  • An internal radiation-curable pressure-sensitive adhesive is also included.
  • Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain much, so they are stable without the oligomer components moving through the adhesive over time. This is preferable because an adhesive layer having a layered structure can be formed.
  • the base polymer having a carbon-carbon double bond a polymer having a carbon-carbon double bond and having adhesiveness can be used without particular limitation.
  • a base polymer those having an acrylic polymer as a basic skeleton are preferable.
  • the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.
  • the method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted. However, it is easy to introduce the carbon-carbon double bond into the polymer side chain in terms of molecular design. is there. For example, after a monomer having a functional group is copolymerized in advance with an acrylic polymer, a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable carbon-carbon double bond. A method of performing condensation or addition reaction while maintaining the above.
  • combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups, and the like.
  • a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction.
  • the functional group may be on either side of the acrylic polymer and the compound as long as the combination of these functional groups generates an acrylic polymer having the carbon-carbon double bond.
  • it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group.
  • examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, and the like.
  • the acrylic polymer a copolymer obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like is used.
  • the base polymer having carbon-carbon double bonds can be used alone, but the radiation-curable monomer component does not deteriorate the properties.
  • photopolymerizable compounds such as oligomer components can also be blended.
  • the amount of the photopolymerizable compound is usually 30 parts by weight or less, preferably 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.
  • the radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like.
  • acrylic polymers described above in particular, an acrylic ester represented by CH 2 ⁇ CHCOOR (wherein R is an alkyl group having 4 to 8 carbon atoms), a hydroxyl group-containing monomer, An acrylic polymer A composed of an isocyanate compound having a radical reactive carbon-carbon double bond is preferred.
  • the number of carbon atoms in the alkyl group of the acrylic acid alkyl ester is less than 4, the polarity is high and the peel force becomes too large, so that the pickup property may be lowered.
  • the number of carbon atoms of the alkyl group of the acrylic acid alkyl ester exceeds 8, the tackiness of the pressure-sensitive adhesive layer 12 is reduced, so that the adhesiveness or adhesion with the metal layer 15 is reduced, and as a result, during dicing Separation of the metal layer 15 may occur.
  • the acrylic polymer A may contain units corresponding to other monomer components as necessary.
  • the acrylic polymer A an isocyanate compound having a radical reactive carbon-carbon double bond is used. That is, it is preferable that the acrylic polymer has a configuration in which a double bond-containing isocyanate compound is subjected to an addition reaction with a polymer based on a monomer composition such as an acrylic ester or a hydroxyl group-containing monomer. Accordingly, the acrylic polymer preferably has a radical reactive carbon-carbon double bond in its molecular structure.
  • the active energy ray hardening-type adhesive layer (ultraviolet ray hardening-type adhesive layer etc.) hardened
  • double bond-containing isocyanate compound examples include methacryloyl isocyanate, acryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, and the like.
  • a double bond containing isocyanate compound can be used individually or in combination of 2 or more types.
  • an external cross-linking agent can be appropriately used for the active energy ray-curable adhesive in order to adjust the adhesive strength before irradiation with active energy rays and the adhesive strength after irradiation with active energy rays.
  • Specific examples of the external crosslinking method include a method of adding a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
  • a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine crosslinking agent, and reacting them.
  • the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked and further depending on the intended use as an adhesive.
  • the amount of the external crosslinking agent used is generally 20 parts by weight or less (preferably 0.1 to 10 parts by weight) with respect to 100 parts by weight of the base polymer.
  • the active energy ray-curable pressure-sensitive adhesive may contain various conventionally known additives such as tackifiers, anti-aging agents, and foaming agents in addition to the above components, if necessary.
  • the thickness of the pressure-sensitive adhesive layer 12 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 ⁇ m. Moreover, the adhesive layer 12 may be comprised by the single layer, or may be comprised by multiple layers.
  • the metal constituting the metal layer 14 is not particularly limited.
  • the laser may be at least one metal selected from the group consisting of aluminum, iron, titanium, tin, nickel, and copper and / or an alloy thereof. It is preferable from the point of marking property.
  • copper, aluminum, or an alloy thereof has high thermal conductivity, and a heat dissipation effect through the metal layer can be obtained.
  • copper, aluminum, iron, nickel, or an alloy thereof can also suppress the warp of the electronic device package.
  • the surface roughness RzJIS by the ten-point average roughness of the metal layer 14 is 0.5 ⁇ m or more and less than 10.0 ⁇ m.
  • the surface roughness RzJIS is preferably 1.0 ⁇ m or more, and 2.0 ⁇ m or more is preferable in that the anchor effect is exhibited more greatly.
  • surface roughness RzJIS when the surface roughness RzJIS is less than 10.0 ⁇ m, an adhesive or a pressure-sensitive adhesive can enter the irregularities on the surface of the metal layer 14. If the adhesive does not enter the irregularities on the surface of the metal layer 14, the portion becomes a void (void), and this void becomes the starting point of the popcorn phenomenon (water vapor explosion) at the time of reflow or reliability test, and the package crack Will occur.
  • surface roughness RzJIS in this specification is a ten-point average roughness defined in Annex JA of JIS B 0601: 2013.
  • the thickness of the metal layer 14 can be appropriately determined in consideration of the handleability and workability of the semiconductor wafer W or the semiconductor chip C, and is usually in the range of 2 to 200 ⁇ m.
  • the metal layer is 200 ⁇ m or less, winding processing is easy, and when the metal layer is 50 ⁇ m or less, it is preferable in that it can contribute to thinning of the semiconductor package.
  • at least 2 ⁇ m or more is necessary from the viewpoint of handleability.
  • the adhesive layer 15 is a film obtained by previously forming an adhesive.
  • the adhesive layer 15 is formed of at least a thermosetting resin, and is preferably formed of at least a thermosetting resin and a thermoplastic resin.
  • thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, Thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET (polyethylene terephthalate) and PBT (polybutylene terephthalate), polyamideimide resin, or fluorine resin Etc.
  • a thermoplastic resin can be used individually or in combination of 2 or more types. Among these thermoplastic resins, acrylic resins are less ionic impurities and have excellent stress relaxation properties, phenoxy resins are both high flexibility and strength and high toughness. This is particularly preferable because reliability can be easily secured.
  • the acrylic resin is not particularly limited, and is a straight chain or branched chain having 30 or less carbon atoms (preferably 4 to 18 carbon atoms, more preferably 6 to 10 carbon atoms, particularly preferably 8 or 9 carbon atoms).
  • Examples thereof include a polymer containing one or more esters of acrylic acid or methacrylic acid having an alkyl group as components. That is, in the present invention, acrylic resin has a broad meaning including methacrylic resin.
  • alkyl group examples include a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, a t-butyl group, an isobutyl group, a pentyl group, an isopentyl group, a hexyl group, a heptyl group, and a 2-ethylhexyl group.
  • Octyl group isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, dodecyl group (lauryl group), tridecyl group, tetradecyl group, stearyl group, octadecyl group and the like.
  • the other monomer for forming the acrylic resin is not particularly limited.
  • acrylic acid Carboxyl group-containing monomers such as methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid or crotonic acid, acid anhydride monomers such as maleic anhydride or itaconic anhydride, (meth) 2-hydroxyethyl acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, (meth) Acrylic acid 10-hydroxydec , Hydroxyl group-containing monomers such as 12-hydroxylauryl (meth) acrylic acid or (4-hydroxymethylcyclohexyl)
  • thermosetting resin examples include an epoxy resin, a phenol resin, an amino resin, an unsaturated polyester resin, a polyurethane resin, a silicone resin, a thermosetting polyimide resin, and the like.
  • a thermosetting resin can be used individually or in combination of 2 or more types.
  • an epoxy resin containing a small amount of ionic impurities that corrode semiconductor elements is particularly suitable.
  • a phenol resin can be used suitably as a hardening
  • the epoxy resin is not particularly limited.
  • bisphenol A type epoxy resin bisphenol F type epoxy resin, bisphenol S type epoxy resin, brominated bisphenol A type epoxy resin, hydrogenated bisphenol A type epoxy resin, bisphenol AF type epoxy.
  • Bifunctional epoxy such as resin, biphenyl type epoxy resin, naphthalene type epoxy resin, fluorene type epoxy resin, phenol novolac type epoxy resin, orthocresol novolak type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylolethane type epoxy resin
  • Epoxy such as resin, polyfunctional epoxy resin, hydantoin type epoxy resin, trisglycidyl isocyanurate type epoxy resin or glycidylamine type epoxy resin Resin can be used.
  • epoxy resin among the examples, novolak type epoxy resin, biphenyl type epoxy resin, trishydroxyphenylmethane type epoxy resin, and tetraphenylolethane type epoxy resin are particularly preferable. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.
  • the phenol resin acts as a curing agent for the epoxy resin.
  • a novolak type phenol resin such as a phenol novolak resin, a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or a resol type.
  • examples thereof include phenol resins and polyoxystyrene such as polyparaoxystyrene.
  • a phenol resin can be used individually or in combination of 2 or more types. Of these phenol resins, phenol novolac resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.
  • the mixing ratio of the epoxy resin and the phenol resin is preferably such that, for example, the hydroxyl group in the phenol resin is 0.5 equivalent to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. More preferred is 0.8 equivalents to 1.2 equivalents. That is, if the blending ratio of both is out of the above range, sufficient curing reaction does not proceed and the properties of the cured epoxy resin are likely to deteriorate.
  • thermosetting acceleration catalyst is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts.
  • stimulation catalyst can be used individually or in combination of 2 or more types.
  • thermosetting acceleration catalyst for example, an amine-based curing accelerator, a phosphorus-based curing accelerator, an imidazole-based curing accelerator, a boron-based curing accelerator, a phosphorus-boron-based curing accelerator, or the like can be used.
  • epoxy resin curing agent a phenol resin is preferably used as described above, but known curing agents such as imidazoles, amines, and acid anhydrides can also be used.
  • the adhesive layer 15 has adhesiveness (adhesion) to the back surface (circuit non-formed surface) of the semiconductor wafer. Therefore, in order to crosslink the adhesive layer 15 to some extent in advance, a polyfunctional compound that reacts with a functional group at the end of the molecular chain of the polymer may be added as a crosslinking agent. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.
  • the crosslinking agent is not particularly limited, and a known crosslinking agent can be used. Specifically, for example, an isocyanate crosslinking agent, an epoxy crosslinking agent, a melamine crosslinking agent, a peroxide crosslinking agent, a urea crosslinking agent, a metal alkoxide crosslinking agent, a metal chelate crosslinking agent, a metal salt Examples thereof include a system crosslinking agent, a carbodiimide crosslinking agent, an oxazoline crosslinking agent, an aziridine crosslinking agent, and an amine crosslinking agent.
  • the crosslinking agent an isocyanate crosslinking agent or an epoxy crosslinking agent is suitable.
  • the said crosslinking agent can be used individually or in combination of 2 or more types.
  • additives can be appropriately blended in the adhesive layer 15 as necessary.
  • additives include fillers (fillers), flame retardants, silane coupling agents, ion trapping agents, bulking agents, antioxidants, antioxidants, and surfactants.
  • the soot filler may be either an inorganic filler or an organic filler, but an inorganic filler is preferred.
  • a filler such as an inorganic filler
  • the adhesive layer 15 can be improved in thermal conductivity, adjusted in elastic modulus, and the like.
  • the inorganic filler include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead, tin
  • various inorganic powders made of metals such as zinc, palladium and solder, alloys, and other carbon.
  • a filler can be used individually or in combination of 2 or more types. Among these, silica or alumina is particularly suitable as the filler, and fused silica is particularly suitable as the silica.
  • the average particle size of the inorganic filler is preferably in the range of 0.1 ⁇ m to 80 ⁇ m. The average particle diameter of the inorganic filler can be measured by, for example, a laser diffraction type particle size distribution measuring apparatus.
  • the blending amount of the filler is preferably 80% by weight or less (0% by weight to 80% by weight), particularly 0% by weight to 70% by weight with respect to the organic resin component. Is preferred.
  • examples of the flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like.
  • a flame retardant can be used individually or in combination of 2 or more types.
  • examples of the silane coupling agent include ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, and the like.
  • a silane coupling agent can be used individually or in combination of 2 or more types.
  • examples of the ion trapping agent include hydrotalcites and bismuth hydroxide. An ion trap agent can be used individually or in combination of 2 or more types.
  • the adhesive layer 15 contains (A) an epoxy resin, (B) a curing agent, (C) a phenoxy resin, and (D) a surface-treated inorganic filler,
  • the content of D) is preferably 40% by weight to 65% by weight with respect to the total of (A) to (D).
  • epoxy resin By using an epoxy resin, high adhesiveness, water resistance, and heat resistance can be obtained.
  • epoxy resin the above-described known epoxy resins can be used.
  • curing agent The above-mentioned well-known hardening
  • the phenoxy resin has a long molecular chain and has a structure similar to that of an epoxy resin, and acts as a flexible material in a composition having a high cross-linking density and imparts high toughness. Composition is obtained.
  • Preferable phenoxy resins are those having a main skeleton of bisphenol A type, and other preferable examples include commercially available phenoxy resins such as bisphenol F type phenoxy resin, bisphenol A / F mixed type phenoxy resin and brominated phenoxy resin.
  • Examples of the inorganic filler that has been surface-treated (D) include inorganic fillers that have been surface-treated with a silane coupling agent.
  • the inorganic filler the above-described known inorganic fillers can be used, and silica and alumina are preferable.
  • the dispersibility of the inorganic filler is improved. For this reason, since it is excellent in fluidity
  • the surface treatment of the inorganic filler with the silane coupling agent is carried out by dispersing the inorganic filler in the silane coupling agent solution by a known method, so that the hydroxyl group present on the surface of the inorganic filler and the alkoxy of the silane coupling agent This is performed by reacting a hydrolyzable group such as a group with a hydrolyzed silanol group to form a Si—O—Si bond on the surface of the inorganic filler.
  • the content of the surface-treated inorganic filler is 40 weights with respect to the total of (A) epoxy resin, (B) curing agent, (C) phenoxy resin, and (D) surface-treated inorganic filler. It is preferable that the water absorption rate and the saturated moisture absorption rate can be reduced, and that the heat conductivity of the adhesive layer is improved and the effect of heat dissipation is obtained through the metal layer.
  • the content of the surface-treated inorganic filler is 65 weights with respect to the total of (A) epoxy resin, (B) curing agent, (C) phenoxy resin, and (D) surface-treated inorganic filler. % Or less is preferable because the fluidity of the resin component can be secured, and the adhesive strength to the metal layer or wafer is excellent.
  • the thickness of the adhesive layer 15 is not particularly limited, it is preferably 3 ⁇ m or more, more preferably 5 ⁇ m or more from the viewpoint of easy handling, and preferably 100 ⁇ m or less in order to contribute to thinning of the semiconductor package, More preferably, it is 50 ⁇ m or less.
  • the metal layer 14 preferably has a thickness equal to or greater than the surface roughness RzJIS due to the ten-point average roughness. When the thickness of the adhesive layer 15 is equal to or greater than the surface roughness RzJIS, the surface of the metal layer 14 can easily enter the unevenness, and the anchor effect can be easily obtained.
  • the adhesive layer 15 may be composed of a single layer or a plurality of layers.
  • the adhesive layer 15 has a peeling force (23 ° C., peeling angle 180 degrees, linear speed 300 mm / min) with the metal layer 14 in the B stage (uncured state or semi-cured state) of 0.3 N or more. Is preferred. When the peeling force is less than 0.3 N, peeling between the semiconductor wafer W or the semiconductor chip C and the adhesive layer 15 or between the adhesive layer 15 and the metal layer 14 occurs when the semiconductor wafer W is diced. This may cause chipping (chip) in the semiconductor chip C.
  • the water absorption rate of the adhesive layer 15 is preferably 1.5 vol% or less.
  • the method for measuring the water absorption rate is as follows. That is, 50 ⁇ 50 mm adhesive layer 15 (film adhesive) was used as a sample, the sample was dried in a vacuum dryer at 120 ° C. for 3 hours, allowed to cool in a desiccator, and then the dry mass was measured. And M1. The sample is immersed in distilled water at room temperature for 24 hours and then taken out. The surface of the sample is wiped off with a filter paper and quickly weighed to obtain M2.
  • d is the density of the film. If the water absorption exceeds 1.5 vol%, package cracks may occur during solder reflow due to the absorbed water.
  • the saturated moisture absorption rate of the adhesive layer 15 is preferably 1.0 vol% or less.
  • the method for measuring the saturated moisture absorption rate is as follows. That is, a circular adhesive layer 15 (film adhesive) having a diameter of 100 mm was used as a sample, the sample was dried at 120 ° C. for 3 hours in a vacuum dryer, allowed to cool in a desiccator, and then the dry mass was measured. To do. The sample is absorbed in a constant temperature and humidity chamber at 85 ° C. and 85% RH for 168 hours, then taken out, and weighed quickly to obtain M2.
  • the saturated moisture absorption rate is calculated by the following equation (2).
  • d is the density of the film.
  • the residual volatile content of the adhesive layer 15 is preferably 3.0 wt% or less.
  • the method for measuring the remaining volatile components is as follows. That is, the adhesive layer 15 (film adhesive) having a size of 50 ⁇ 50 mm is used as a sample, the initial mass of the sample is measured as M1, and the sample is heated at 200 ° C. for 2 hours in a hot air circulating thermostat, Weigh to M2.
  • the remaining volatile content is calculated by the following equation (3).
  • Residual volatile matter (wt%) [(M2-M1) / M1] ⁇ 100 (3) If the residual volatile content exceeds 3.0 wt%, the solvent is volatilized by heating during packaging, and voids are generated inside the adhesive layer 15, which may cause package cracks.
  • the ratio of the linear expansion coefficient of the metal layer 14 to the linear expansion coefficient of the adhesive layer 15 is preferably 0.2 or more. When the ratio is less than 0.2, peeling between the metal layer 14 and the adhesive layer 15 is likely to occur, and a package crack may occur during packaging, which may reduce reliability.
  • the separator is for improving the handleability of the adhesive layer 15 and protecting the adhesive layer 15.
  • polyester PET, PBT, PEN, PBN, PTT
  • polyolefin PP, PE
  • copolymer EVA, EEA, EBA
  • a film with improved adhesion and mechanical strength can be used.
  • the laminated body of these films may be sufficient.
  • the thickness of the separator is not particularly limited and may be set appropriately, but is preferably 25 to 50 ⁇ m.
  • the adhesive layer 15 can be formed using a conventional method of preparing a resin composition and forming it into a film-like layer. Specifically, for example, the resin composition is applied on a suitable separator (such as release paper) and dried (in the case where heat curing is necessary, heat treatment is performed as necessary to dry), Examples include a method of forming the adhesive layer 15.
  • the resin composition may be a solution or a dispersion.
  • the obtained adhesive layer 15 and a separately prepared metal layer 14 are bonded together.
  • the metal layer 14 a commercially available metal foil may be used. Thereafter, the adhesive layer 15 and the metal layer 14 are pre-cut into a circular label shape of a predetermined size using a pressing blade, and unnecessary peripheral portions are removed.
  • the base film 11 can be formed by a conventionally known film forming method.
  • the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.
  • the pressure-sensitive adhesive composition is applied on the base film 11 and dried (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 12.
  • the coating method include roll coating, screen coating, and gravure coating.
  • the pressure-sensitive adhesive layer 12 may be transferred to the base film 11 after the pressure-sensitive adhesive layer 12 is formed. Thereby, the dicing tape 13 in which the adhesive layer 12 is formed on the base film 11 is produced.
  • the dicing tape 13 is laminated on a separator provided with the circular metal layer 14 and the adhesive layer 15 so that the metal layer 14 and the pressure-sensitive adhesive layer 12 are in contact with each other.
  • the dicing tape 13 has a predetermined size.
  • the semiconductor processing tape 10 is made by pre-cutting into a circular label shape or the like.
  • the manufacturing method of a semiconductor device includes a step of attaching a semiconductor wafer W onto a semiconductor processing tape 10 integrated with a dicing tape (mounting step), and a step of dicing the semiconductor wafer W to form a semiconductor chip C (dicing step). ), A step of separating the semiconductor chip C from the adhesive layer 12 of the dicing tape 13 together with the semiconductor processing tape 10 (pickup step), and a step of flip-chip connecting the semiconductor chip C onto the adherend 16 (flip chip). Connecting step).
  • the separator arbitrarily provided on the dicing tape-integrated semiconductor processing tape 10 is appropriately peeled off, and the semiconductor wafer W is adhered to the adhesive layer 15 as shown in FIG. This is adhered and held and fixed (mounting process). At this time, the adhesive layer 15 is in an uncured state (including a semi-cured state).
  • the dicing tape-integrated semiconductor processing tape 10 is attached to the back surface of the semiconductor wafer W.
  • the back surface of the semiconductor wafer W means a surface opposite to the circuit surface (also referred to as a non-circuit surface or a non-electrode forming surface).
  • the sticking method is not specifically limited, the method by pressure bonding is preferable.
  • the crimping is usually performed while pressing with a pressing means such as a crimping roll.
  • the semiconductor wafer W is diced.
  • the semiconductor wafer W is cut into a predetermined size and divided into pieces (small pieces), whereby the semiconductor chip C is manufactured.
  • the dicing is performed from the circuit surface side of the semiconductor wafer W according to a conventional method.
  • a cutting method called full cut in which cutting is performed up to the semiconductor processing tape 10 can be employed. It does not specifically limit as a dicing apparatus used at this process, A conventionally well-known thing can be used.
  • the semiconductor wafer W is bonded and fixed with excellent adhesion by the semiconductor processing tape 10, chip chipping and chip jump can be suppressed, and damage to the semiconductor wafer W can be suppressed.
  • the expansion can be performed using a conventionally known expanding apparatus.
  • the semiconductor chip C is picked up, and the semiconductor chip C is peeled off from the dicing tape 13 together with the adhesive layer 15 and the metal layer 14.
  • the pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up each semiconductor chip C from the base film 11 side of the semiconductor processing tape 10 with a needle and picking up the pushed semiconductor chip C with a pickup device, etc. can be mentioned. Note that the back surface of the picked-up semiconductor chip C is protected by the metal layer 14.
  • the picked-up semiconductor chip C is fixed to an adherend 16 such as a substrate by a flip chip bonding method (flip chip mounting method).
  • the semiconductor chip C is always placed on the adherend 16 such that the circuit surface (also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.) of the semiconductor chip C faces the adherend 16.
  • the circuit surface also referred to as a surface, a circuit pattern formation surface, an electrode formation surface, etc.
  • flux is first attached to the bumps 17 as connection portions formed on the circuit surface side of the semiconductor chip C.
  • the bumps 17 and the conductive material 18 are melted while bringing the bumps 17 of the semiconductor chip C into contact with the bonding conductive material 18 (solder or the like) attached to the connection pads of the adherend 16 and pressing them.
  • the electrical conduction between the semiconductor chip C and the adherend 16 can be ensured, and the semiconductor chip C can be fixed to the adherend 16 (flip chip bonding step).
  • a gap is formed between the semiconductor chip C and the adherend 16, and the gap distance is generally about 30 ⁇ m to 300 ⁇ m.
  • various substrates such as a lead frame and a circuit substrate (such as a wiring circuit substrate) can be used.
  • the material of such a substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate.
  • the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate.
  • a chip-on-chip structure can be obtained by using another semiconductor chip as the adherend 16 and flip-chip connection of the semiconductor chip C.
  • Zinc ionomer (13% methacrylic acid content, softening point 72 ° C, melting point 90 ° C) of ethylene-methacrylic acid copolymer synthesized by radical polymerization was melted at 140 ° C and using an extruder.
  • a base film was produced by forming into a long film having a thickness of 100 ⁇ m.
  • the prepared pressure-sensitive adhesive layer composition was coated on a release liner made of a polyethylene-terephthalate film subjected to a release treatment so that the thickness after drying was 10 ⁇ m, dried at 110 ° C. for 3 minutes,
  • a dicing tape (1) in which an adhesive layer was formed on a base film was prepared by laminating with a material film.
  • Adhesive composition b-1) 20 parts by mass of “1002” (trade name, manufactured by Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600) as an epoxy resin, and “806” (trade name, manufactured by Mitsubishi Chemical Corporation, bisphenol F type, manufactured by Mitsubishi Chemical Corporation) 55 parts by mass of epoxy resin, epoxy equivalent 160, specific gravity 1.20), 70 parts by mass of “MEH7851-4H” (trade name, manufactured by Meiwa Kasei Co., Ltd., biphenylaralkyl type phenolic resin) as a curing agent, “SO— 200 parts by mass of “C2” (trade name, manufactured by Admafine Co., Ltd., average particle size 0.5 ⁇ m), and “Aerosil R972” (trade name, manufactured by Nippon Aerosil Co., Ltd., average particle size of primary particle size 0 as silica filler) .016 ⁇ m) Add 3 parts by weight of methyl ethyl ketone to the composition, stir and mix,
  • Adhesive composition b-2 40 parts by mass of “1002” (trade name, manufactured by Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600) as an epoxy resin, and “806” (trade name, manufactured by Mitsubishi Chemical Corporation, bisphenol F type, manufactured by Mitsubishi Chemical Corporation) Epoxy resin, epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, “Dyhard100SF” (trade name, Degussa, dicyandiamide) as a curing agent, “SO-C2” (trade name, Admafine Stock) as silica filler 350 parts by mass made by company, average particle size 0.5 ⁇ m), and 3 parts by mass “Aerosil R972” (trade name, product name by Nippon Aerosil Co., Ltd., average particle size 0.016 ⁇ m of primary particle size) as silica filler Add methyl ethyl ketone to the resulting composition and mix by stirring to obtain a uniform composition.
  • “1002” trade name, manufactured by Mitsubishi Chemical Corporation, solid
  • PKHH trade name, manufactured by INCHEM, mass average molecular weight 52,000, glass transition temperature 92 ° C.
  • KBM-802 trade name, Shin-Etsu Silicone Co., Ltd.
  • a coupling agent 0.6 parts by mass of mercaptopropyltrimethoxysilane (manufactured by the company) and “Cureazole 2PHZ-PW” (trade name, manufactured by Shikoku Kasei Co., Ltd., 2-phenyl-4,5-dihydroxymethylimidazole, decomposition) 0.5 parts by mass of (temperature 230 ° C.) was added and mixed with stirring until uniform. Further, this was filtered through a 100 mesh filter and vacuum degassed to obtain an adhesive composition b-2 varnish.
  • Adhesive composition b-1 was applied to a separator made of a polyethylene-terephthalate film that had been subjected to a release treatment so that the thickness after drying was 5 ⁇ m, dried at 110 ° C. for 5 minutes, and then adhered onto the separator. An adhesive film on which the agent layer was formed was produced.
  • Adhesive layer (2) An adhesive layer (2) was obtained in the same manner as the adhesive layer (1) except that the adhesive composition b-2 was used instead of the adhesive composition b-1.
  • Adhesive layer (3) An adhesive layer (3) was obtained by the same method as the adhesive layer (1) except that the thickness after drying was 20 ⁇ m.
  • Metal layer The following were prepared as a metal layer.
  • F3-WS trade name, manufactured by Furukawa Electric Co., Ltd., copper foil, thickness 12 ⁇ m, surface roughness Rz JIS 2.8 um
  • a single-sided adhesive film was produced by bonding the adhesive layer (1) and the metal layer (1) obtained as described above under the conditions of a bonding angle of 120 °, a pressure of 0.2 MPa, and a speed of 10 mm / s.
  • the single-sided adhesive film is pre-cut into a shape that can cover the wafer in a shape that allows the dicing tape (1) to be bonded to the ring frame, and the adhesive layer of the dicing tape (1) and the metal layer of the single-sided adhesive film The side was bonded so that the adhesive layer was exposed around the single-sided adhesive film, and the semiconductor processing tape of Example 1 was produced.
  • Examples 2-5, Comparative Examples 1-2> The semiconductor processing tapes of Examples 2 to 5 and Comparative Examples 1 and 2 were prepared in the same manner as in Example 1 except that the combination of the dicing tape, the adhesive composition, and the metal layer was changed to the combinations shown in Table 1. Produced.
  • the adhesive layer of the semiconductor processing tape according to each example and each comparative example was attached to the back surface of a silicon wafer having a thickness of 200 ⁇ m, and dicing was performed to divide into 7.5 mm ⁇ 7.5 mm evaluation chips.
  • dicing was performed to divide into 7.5 mm ⁇ 7.5 mm evaluation chips.
  • the semiconductor processing tape with a chip after dicing whether or not the evaluation chip with the adhesive layer is detached from the metal layer, or the evaluation chip with the adhesive layer and the metal layer is detached from the adhesive layer. was observed. A product in which no detachment occurred was evaluated as a good product, and a product in which detachment occurred in one place was evaluated as a defective product.
  • a silicon wafer having a thickness of 650 ⁇ m was diced into 7.5 mm ⁇ 7.5 mm using a general conventional dicing die bonding film (FH-900-20 manufactured by Hitachi Chemical Co., Ltd.) to obtain an evaluation element. .
  • This evaluation element was die-bonded on a silver-plated lead frame to obtain an evaluation substrate.
  • the evaluation chip according to each example and each comparative example obtained by the method described in the dicing evaluation was placed on the evaluation element of the evaluation substrate under the conditions of a temperature of 160 ° C., a pressure of 0.1 MPa, and a time of 1 second. After mounting, 20 reliability samples of the chip-on-chip structure according to each example and each comparative example were produced.
  • Each reliability sample was treated with a constant temperature and humidity layer of 85 ° C./85% RH for 168 hours, and then the sample was passed through an IR (infrared) reflow furnace set so that the maximum temperature of the sample surface was 20 seconds at 260 ° C. The process of cooling by standing at room temperature was repeated three times.
  • IR infrared
  • about 20 samples subjected to the above-described treatment the peeling of the adhesive layer and the metal layer was observed.
  • a sample in which exfoliation occurred was marked as x as a defective product.
  • SAT Ultrasonic exploration apparatus
  • the surface roughness RzJIS of the metal layer is 0.6 ⁇ m or more and 9.0 ⁇ m or less, and 0.5 ⁇ m or more and 10.0 ⁇ m as defined in the claims. Therefore, the dicing property and the reliability were good.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Dicing (AREA)

Abstract

L'invention fournit un ruban pour usinage de semi-conducteur qui permet de séparer de manière satisfaisante une tranche de semi-conducteur lors d'un découpage en dés, et d'inhiber l'apparition de fissure d'emballage lors de l'emballage. Le ruban pour usinage de semi-conducteur (10) de l'invention possède : un ruban de découpage en dés (13) possédant à son tour un film de matériau de base (11) et une couche d'adhésif (12); une couche métallique (14) qui est agencée sur ladite couche d'adhésif (12), et qui est destinée à protéger la face envers d'une puce à semi-conducteur; et une couche d'agent adhésif (15) qui est agencée sur la couche métallique (14), et qui est destinée à mettre la couche métallique (14) en adhésion sur la face envers de la puce à semi-conducteur. La rugosité de surface (ＲｚＪＩＳ) selon la rugosité moyenne de dix points de ladite couche métallique (14), est supérieure ou égale à 0,5μｍ et inférieure à 10,0μｍ.
PCT/JP2016/079626 2015-12-25 2016-10-05 Ruban pour usinage de semi-conducteur WO2017110202A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
MYPI2017001618A MY184346A (en) 2015-12-25 2016-10-05 Tape for semiconductor processing
CN201680032247.9A CN107614641B (zh) 2015-12-25 2016-10-05 半导体加工用带
JP2017557750A JP6757743B2 (ja) 2015-12-25 2016-10-05 半導体加工用テープ
SG11201708850VA SG11201708850VA (en) 2015-12-25 2016-10-05 Tape for semiconductor processing
KR1020177034527A KR102580602B1 (ko) 2015-12-25 2016-10-05 반도체 가공용 테이프
PH12017502122A PH12017502122B1 (en) 2015-12-25 2017-11-21 Tape for semiconductor processing

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015255312 2015-12-25
JP2015-255312 2015-12-25

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Publication Number Publication Date
WO2017110202A1 true WO2017110202A1 (fr) 2017-06-29

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JP (1) JP6757743B2 (fr)
KR (1) KR102580602B1 (fr)
CN (1) CN107614641B (fr)
MY (1) MY184346A (fr)
PH (1) PH12017502122B1 (fr)
SG (1) SG11201708850VA (fr)
TW (1) TWI636886B (fr)
WO (1) WO2017110202A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019022050A1 (fr) * 2017-07-25 2019-01-31 積水化学工業株式会社 Ruban adhésif pour la protection de semi-conducteur et procédé de traitement de semi-conducteur
JP7512848B2 (ja) 2020-11-02 2024-07-09 大日本印刷株式会社 積層体および積層体の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109454955B (zh) * 2018-12-19 2021-07-06 广东生益科技股份有限公司 一种封装载带基材及其制备方法
CN115410927A (zh) * 2022-09-29 2022-11-29 北京超材信息科技有限公司 半导体器件的切割方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167699A (ja) * 1997-08-13 1999-03-09 Texas Instr Japan Ltd 半導体装置の製造方法
JP2000071387A (ja) * 1998-08-31 2000-03-07 Kyocera Corp 金属箔付きフィルム及びそれを用いた配線基板の製造方法
JP2003298230A (ja) * 2002-03-28 2003-10-17 Tokai Rubber Ind Ltd フレキシブルプリント配線板用基材
JP2006103108A (ja) * 2004-10-04 2006-04-20 Sekisui Chem Co Ltd 金属箔付フィルム
JP2008045011A (ja) * 2006-08-14 2008-02-28 Nitto Denko Corp 粘着シート、その製造方法および積層セラミックシートの切断方法
JP2010185013A (ja) * 2009-02-12 2010-08-26 Shin-Etsu Chemical Co Ltd 接着剤組成物およびそれを用いた半導体ウエハ用保護シート
JP2010225651A (ja) * 2009-03-19 2010-10-07 Sekisui Chem Co Ltd ダイシングテープ及び半導体チップの製造方法
JP2012028397A (ja) * 2010-07-20 2012-02-09 Nitto Denko Corp フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、半導体装置の製造方法、及び、フリップチップ型半導体装置
JP2012033626A (ja) * 2010-07-29 2012-02-16 Nitto Denko Corp フリップチップ型半導体裏面用フィルム及びその用途
JP2013235962A (ja) * 2012-05-09 2013-11-21 Hitachi Chemical Co Ltd 半導体装置の製造方法
JP2015043383A (ja) * 2013-08-26 2015-03-05 日立化成株式会社 ウェハ加工用テープ
JP2015185584A (ja) * 2014-03-20 2015-10-22 日立化成株式会社 ウエハ加工用テープ

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004189981A (ja) * 2002-12-13 2004-07-08 Kanegafuchi Chem Ind Co Ltd 熱可塑性ポリイミド樹脂材料および積層体およびプリント配線板の製造方法
JP4865312B2 (ja) 2005-12-05 2012-02-01 古河電気工業株式会社 チップ用保護膜形成用シート
JP2007235022A (ja) 2006-03-03 2007-09-13 Mitsui Chemicals Inc 接着フィルム
JP5681374B2 (ja) * 2010-04-19 2015-03-04 日東電工株式会社 ダイシングテープ一体型半導体裏面用フィルム
JP6144868B2 (ja) * 2010-11-18 2017-06-07 日東電工株式会社 フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、及び、フリップチップ型半導体裏面用フィルムの製造方法
JP2015129247A (ja) * 2014-01-09 2015-07-16 住友ベークライト株式会社 樹脂組成物、接着フィルム、接着シート、ダイシングテープ一体型接着シート、バックグラインドテープ一体型接着シート、ダイシングテープ兼バックグラインドテープ一体型接着シート、および、電子装置
JP6229528B2 (ja) * 2014-02-17 2017-11-15 日立化成株式会社 半導体装置の製造方法、半導体装置及び接着剤組成物
TWI653312B (zh) * 2014-03-11 2019-03-11 日商味之素股份有限公司 接著薄膜
JP6078578B2 (ja) * 2015-04-22 2017-02-08 日東電工株式会社 フリップチップ型半導体裏面用フィルム及びその用途

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1167699A (ja) * 1997-08-13 1999-03-09 Texas Instr Japan Ltd 半導体装置の製造方法
JP2000071387A (ja) * 1998-08-31 2000-03-07 Kyocera Corp 金属箔付きフィルム及びそれを用いた配線基板の製造方法
JP2003298230A (ja) * 2002-03-28 2003-10-17 Tokai Rubber Ind Ltd フレキシブルプリント配線板用基材
JP2006103108A (ja) * 2004-10-04 2006-04-20 Sekisui Chem Co Ltd 金属箔付フィルム
JP2008045011A (ja) * 2006-08-14 2008-02-28 Nitto Denko Corp 粘着シート、その製造方法および積層セラミックシートの切断方法
JP2010185013A (ja) * 2009-02-12 2010-08-26 Shin-Etsu Chemical Co Ltd 接着剤組成物およびそれを用いた半導体ウエハ用保護シート
JP2010225651A (ja) * 2009-03-19 2010-10-07 Sekisui Chem Co Ltd ダイシングテープ及び半導体チップの製造方法
JP2012028397A (ja) * 2010-07-20 2012-02-09 Nitto Denko Corp フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、半導体装置の製造方法、及び、フリップチップ型半導体装置
JP2012033626A (ja) * 2010-07-29 2012-02-16 Nitto Denko Corp フリップチップ型半導体裏面用フィルム及びその用途
JP2013235962A (ja) * 2012-05-09 2013-11-21 Hitachi Chemical Co Ltd 半導体装置の製造方法
JP2015043383A (ja) * 2013-08-26 2015-03-05 日立化成株式会社 ウェハ加工用テープ
JP2015185584A (ja) * 2014-03-20 2015-10-22 日立化成株式会社 ウエハ加工用テープ

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019022050A1 (fr) * 2017-07-25 2019-01-31 積水化学工業株式会社 Ruban adhésif pour la protection de semi-conducteur et procédé de traitement de semi-conducteur
CN110446765A (zh) * 2017-07-25 2019-11-12 积水化学工业株式会社 半导体保护用粘合带和处理半导体的方法
JPWO2019022050A1 (ja) * 2017-07-25 2020-05-28 積水化学工業株式会社 半導体保護用粘着テープ及び半導体を処理する方法
JP7181086B2 (ja) 2017-07-25 2022-11-30 積水化学工業株式会社 半導体保護用粘着テープ及び半導体を処理する方法
JP7512848B2 (ja) 2020-11-02 2024-07-09 大日本印刷株式会社 積層体および積層体の製造方法

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