WO2017032248A1 - 一种小开口蒸镀用掩模板 - Google Patents

一种小开口蒸镀用掩模板 Download PDF

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Publication number
WO2017032248A1
WO2017032248A1 PCT/CN2016/095612 CN2016095612W WO2017032248A1 WO 2017032248 A1 WO2017032248 A1 WO 2017032248A1 CN 2016095612 W CN2016095612 W CN 2016095612W WO 2017032248 A1 WO2017032248 A1 WO 2017032248A1
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Prior art keywords
mask
opening
layer
window
support
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PCT/CN2016/095612
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English (en)
French (fr)
Inventor
魏志凌
赵录军
杨涛
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昆山允升吉光电科技有限公司
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Priority to KR1020187005575A priority Critical patent/KR20180034571A/ko
Priority to JP2018509585A priority patent/JP2018525529A/ja
Publication of WO2017032248A1 publication Critical patent/WO2017032248A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks

Definitions

  • the invention belongs to the display panel manufacturing industry, and relates to a mask for vapor deposition used in the process of manufacturing an OLED display panel, and particularly relates to a mask for small opening vapor deposition.
  • OLED Organic Light-Emitting Diode
  • OLED has no backlight, high contrast, thin thickness, wide viewing angle, fast response, flexible panel, and wide temperature range.
  • the excellent characteristics of structure, process and process are considered to be the next generation of flat panel display emerging application technologies.
  • OLED is a solid material
  • VTE vacuum thermal evaporation
  • the organic molecules located in the vacuum chamber are slightly heated (evaporated), so that these molecules are condensed in the form of a thin film on a substrate having a lower temperature.
  • a high-precision mask suitable for the accuracy of the OLED light-emitting display unit is required as a medium.
  • FIG. 1 is a schematic view showing a structure of a mask for OLED evaporation, in which a mask 11 having a mask pattern 10 is fixed on the outer frame 12, wherein the mask 11 and the outer frame 12 are made of a metal material.
  • 2 is an enlarged cross-sectional view taken along line A-A of FIG.
  • the mask 11 is generally The metal foil is obtained by an etching process, and the size of the mask portion (20) and the opening (21) constituting the mask pattern (10) thereof is limited by the thickness h (h is generally greater than 30 ⁇ m) of the metal foil itself and the process, thereby limiting The resolution of the final OLED product; in other words, the width dimension d1 of the opening (21) is difficult to further reduce (the current d1 is less than 30um opening is very difficult to make), even if it can be small, large aspect ratio The opening also does not satisfy the high quality evaporation process. In view of this, there is a need in the industry for a solution that can solve this problem.
  • the present invention provides a mask for small opening vapor deposition, which can effectively overcome the above problems, and the specific technical solutions are as follows.
  • a mask for small opening evaporation comprising a mask layer and a mask support layer, the mask layer having an opening unit formed by an array of mask openings, the mask support layer having a window unit formed by the array of supporting windows, the mask layer and the mask supporting layer are closely adhered; the mask opening array pattern constituting the opening unit is the same as the supporting window array constituting the window unit
  • the mask opening is in one-to-one correspondence with the support window, and each of the mask openings is disposed inside the corresponding support window; the opening size of the mask opening is smaller than the corresponding support window
  • the opening size, the thickness of the mask layer is not greater than the thickness of the mask support layer.
  • the thickness of the mask layer ranges from 2 to 20 ⁇ m; the thickness of the mask support layer The range is: 20-60 ⁇ m.
  • the thickness of the mask layer is: 5 ⁇ m, 8 ⁇ m, 12 ⁇ m, 15 ⁇ m or 18 ⁇ m; the thickness of the mask support layer is 25 ⁇ m, 30 ⁇ m, 35 ⁇ m, 40 ⁇ m, 45 ⁇ m or 50 ⁇ m.
  • the opening of the mask forming the opening unit and the shape of the opening of the supporting window constituting the window unit are both rectangular, and the length of the side of the mask opening on the mask layer ranges from 15 to 40 ⁇ m. .
  • the opening of the mask forming the opening unit and the opening of the supporting window constituting the window unit are both regular hexagonal or octagonal, and the edge of the mask opening on the mask layer
  • the long size range is 10-30 ⁇ m.
  • the shape of the opening of the mask opening constituting the opening unit and the support window constituting the window unit may also be circular, and the mask opening on the mask layer may have a diameter ranging from 15 to 45 ⁇ m.
  • the material of the mask layer constituting the mask is an organic material.
  • the material of the mask supporting layer is a metal material, which is preferably stainless steel, Invar or other nickel-based alloy.
  • the constituent materials of the conventional mask are all metal alloys, and the present invention provides a technical solution completely different from the existing mask, and the mask for small opening evaporation of the present invention It has the following advantages: due to the role of the metal mask supporting layer, the organic mask layer constituting the mask can be made thin, so that the mask opening of the mask layer has a small aspect ratio, further The width dimension of the opening is made smaller so that the resulting final mask can be evaporated to form a higher resolution OLED product.
  • FIG. 1 is a schematic structural view of a mask for OLED evaporation in the prior art
  • Figure 2 is a schematic enlarged cross-sectional view taken along line A-A of Figure 1;
  • FIG. 3 is a schematic overall view of a first embodiment of a mask for small opening vapor deposition according to the present invention.
  • Figure 4 is an enlarged schematic view of a portion I of Figure 3;
  • Figure 5 is a schematic cross-sectional view taken along line B-B of Figure 4.
  • Figure 6 is a schematic view of the reverse side of the structure shown in Figure 4.
  • Figure 7 is a schematic view of a second embodiment of a mask according to the present invention.
  • Figure 8 is a schematic view of a third embodiment of a mask according to the present invention.
  • Fig. 9 is a schematic view showing the vapor deposition of an organic material using the mask for small opening vapor deposition of the present invention.
  • FIG. 3 is a mask of the present invention, and I is an area to be enlarged;
  • 410 is a support window
  • 420 is a mask opening
  • d2 is a side length dimension of the rectangular mask opening 420
  • B-B is a section to be cross-section
  • 41 is a mask supporting layer
  • 42 is a mask layer
  • h1 is the thickness of the mask supporting layer 41
  • h2 is the thickness of the mask layer 42;
  • 90 is a substrate
  • 91 is a fixing mechanism for fixing the mask assembly
  • 92 is an organic vapor deposition source.
  • FIG. 3 is a schematic view showing a first embodiment of the mask for small opening vapor deposition according to the present invention
  • FIG. 4 is a view of FIG. Figure 5 is a schematic cross-sectional view of the structure shown in Figure 4
  • Figure 6 is a schematic view of the reverse side of the structure shown in Figure 4
  • Figure 7 is a schematic view of the second embodiment of the mask according to the present invention.
  • FIG. 8 is a schematic view showing a third embodiment of a mask according to the present invention.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • the mask 30 includes a two-layer structure of a mask layer 42 and a mask supporting layer 41.
  • the mask layer 42 has an opening unit formed by an array of mask openings 420 (the opening unit is a set of closely arranged masks).
  • the mask support layer 41 has a window unit formed by an array of support windows 410 (the window unit is a set of closely arranged support windows), as shown in FIG. 5, the mask layer 42 and the mask support layer 41 As shown in FIG. 4 and FIG.
  • the mask opening 420 constituting the opening unit is arranged in the same manner as the supporting window 410 constituting the window unit, and the mask opening 420 is in one-to-one correspondence with the supporting window 410, and Each mask opening 420 is disposed inside the corresponding support window 410 (ie, the edge of the mask opening 420 is within the area enclosed by the edge of the support window 410); the opening size of the mask opening 420 is smaller than the corresponding support window
  • the opening size of the mask layer, the thickness h2 of the mask layer is not greater than the thickness h1 of the mask supporting layer 41.
  • the mask evaporation effect is in the opening quality of the mask layer 42 mask opening 420, and a higher quality mask opening 420 may be disposed on the relatively thin mask layer 42 (ie, the mask is prepared)
  • the edge of the opening is neat, and has a small aspect ratio (ie, the ratio of the thickness of the mask layer to the size of the opening is small), and the smaller aspect ratio facilitates subsequent evaporation of the material.
  • the support window 410 on the mask supporting layer 41 constituting the mask has a larger opening size, which has less influence on the evaporation of the subsequent organic material, and a relatively thicker mask (compared to the thickness of the mask layer)
  • the support layer 41 can provide a relatively stable support seat and does not form due to its own thickness problem. It has an effect on the evaporation of organic use in the later stage.
  • the thickness h2 of the mask layer 42 ranges from 2 to 20 ⁇ m; and the thickness h1 of the mask support layer 41 ranges from 20 to 60 ⁇ m.
  • the thickness h2 of the mask layer 42 may be specifically designed to be 5 ⁇ m, 8 ⁇ m, 12 ⁇ m, 15 ⁇ m or 18 ⁇ m in some embodiments of the present invention; the thickness h1 of the mask support layer 41 is specifically designed to be 25 ⁇ m. 30 ⁇ m, 35 ⁇ m, 40 ⁇ m, 45 ⁇ m or 50 ⁇ m.
  • the opening shape of the mask opening 420 constituting the opening unit and the support window 410 constituting the window unit are both rectangular (preferably square), and the side length dimension d2 of the mask opening 420 on the mask layer 42 is 15 -40 ⁇ m.
  • the opening units (or window units) constituting the present embodiment are each constituted by an array of mask openings (or supporting windows), with specific reference to FIG. 4 or FIG.
  • the material of the mask layer 42 constituting the mask sheet 30 is an organic material having film forming properties, and the resulting film layer has a certain breaking strength.
  • the organic material is a photoresist or other organic material having photosensitivity.
  • the material constituting the mask supporting layer 41 in the present invention is a metal material, and stainless steel, Invar or other nickel-based alloy is generally used, which is preferably an Invar alloy sheet having a small coefficient of thermal expansion.
  • the difference from the first embodiment is that the opening of the mask opening 420 constituting the opening unit and the support window 410 constituting the window unit are both regular hexagonal or octagonal, wherein the mask layer 42 is masked.
  • the side length of the opening 420 ranges from 10 to 30 ⁇ m.
  • FIG. 7 is a schematic view showing that the mask opening 420 of the unit and the opening shape of the support window 410 are both regular hexagons. (not here) Let's take an example of an octagon)
  • the difference from the first embodiment is that the opening shape of the mask opening 420 constituting the opening unit and the support window 410 constituting the window unit are both circular, wherein the diameter of the mask opening 420 on the mask layer 42 is The range is 15-45 ⁇ m.
  • FIG. 8 is a schematic view showing that the mask opening 420 of the unit and the opening shape of the support window 410 are both circular.
  • the constituent materials of the conventional mask are all metal alloys, and the present invention provides a technical solution completely different from the existing mask, and the mask for small opening evaporation of the present invention It has the following advantages: due to the role of the metal mask supporting layer, the organic mask layer constituting the mask can be made thin, so that the mask opening of the mask layer has a small aspect ratio, further The width dimension of the opening is made smaller so that the resulting final mask can be evaporated to form a higher resolution OLED product.
  • the mask formed by the present invention finally determines the deposition effect of the organic material as the mask opening 420 of the mask layer 42. Since the mask layer has the characteristics of an organic material, it is relatively easy to achieve "lightweight”. Due to the "light” nature, the mask support layer 41 underneath it is easy to support it; and the "thin” feature allows the aperture structure 42 disposed thereon to more easily achieve a small-sized opening design.
  • FIG. 9 is a schematic view showing the vapor deposition of an organic material using the magnetic mask of the present invention.
  • the mask 30 mounted on the outer frame 12 is fixed to the fixing mechanism 91 through the outer frame 12, and the upper portion of the mask 30 is disposed.
  • the substrate 90 to be vapor-deposited is provided with an organic vapor deposition source 92 at the lower portion.
  • the organic material in the organic evaporation source 92 is diffused into the chamber by evaporation, and the diffused organic material is deposited on the substrate 90 through the support window of the mask 30 and the opening of the mask to form an organic light-emitting layer.
  • a magnetic adsorption device is generally disposed behind the substrate.
  • the mask plate according to the present invention retains a metal layer structure, which has the magnetic properties of the conventional mask plate, and can be adsorbed by the magnetic adsorption device behind the substrate in the later application process, thereby further reducing the amount of sag of the mask.
  • any reference to "one embodiment”, “an embodiment”, “an exemplary embodiment” or the like means that a particular component, structure or feature described in connection with the embodiment is included in at least one embodiment of the invention.
  • This schematic representation throughout the specification does not necessarily refer to the same embodiment.
  • a specific component, structure or feature is described in connection with any embodiment, it is claimed that such a component, structure or feature in combination with other embodiments is within the scope of those skilled in the art.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种小开口蒸镀用掩模板（30），包括掩模层（42）和掩模支撑层（41）两层结构，掩膜层（42）具有由掩模开口（420）阵列形成的开口单元，掩模支撑层（41）具有由支撑窗口（410）阵列形成的窗口单元，掩模层（42）和掩模支撑层（41）之间紧密贴合；构成开口单元的掩模开口（420）阵列方式与构成窗口单元的支撑窗口（410）阵列方式相同，掩模开口（420）与支撑窗口（410）一一对应，且每个掩模开口（420）设置于相应的支撑窗口（410）内部；掩模开口（420）的开口尺寸小于相对应的支撑窗口（410）的开口尺寸，掩膜层（42）的厚度不大于掩模支撑层（41）的厚度。

Description

一种小开口蒸镀用掩模板 技术领域
本发明属于显示面板制作行业，涉及一种应用于OLED显示面板制作过程中的蒸镀用掩模板，具体涉及一种小开口蒸镀用掩模板。
背景技术
由于有机电致发光二极管(Organic Light-Emitting Diode，OLED)由于同时具备自发光，不需背光源、对比度高、厚度薄、视角广、反应速度快、可用于挠曲性面板、使用温度范围广、构造及制程较简单等优异之特性，被认为是下一代的平面显示器新兴应用技术。
OLED生产过程中最重要的一环节是将有机层按照驱动矩阵的要求沉积到基板上，形成关键的发光显示单元。OLED是一种固体材料，其高精度涂覆技术的发展是制约OLED产品化的关键。目前完成这一工作，主要采用真空沉积或真空热蒸发(VTE)的方法，其是将位于真空腔体内的有机物分子轻微加热(蒸发)，使得这些分子以薄膜的形式凝聚在温度较低的基板上。在这一过程中需要与OLED发光显示单元精度相适应的高精密掩模板作为媒介。
图1所示是一种用于OLED蒸镀用掩模板的结构示意图，具有掩模图案10的掩模板11固定在外框12上，其中掩模板11、外框12均为金属材料。图2所示为图1中A-A方向的截面放大示意图，20为掩模部，21为有机材料蒸镀时在基板上形成薄膜所经过的开口，由于掩模板11一般是 金属薄片通过蚀刻工艺制得，构成其掩模图案(10)的掩模部(20)、开口(21)的尺寸会受到金属薄片本身厚度h(h一般大于30μm)和工艺的限制，从而限制最终OLED产品的分辨率；换而言之，开口(21)的宽度尺寸d1很难进一步做小(目前d1小于30um的开口非常难以制作)，即使能够做到很小，较大高宽比的开口亦不能满足高质量蒸镀过程。鉴于此，业内亟需一种能够解决此问题的方案。
发明内容
有鉴于此，本发明提供了一种小开口蒸镀用掩模板,能够有效克服以上问题，具体技术方案如下。
一种小开口蒸镀用掩模板，所述掩模板包括掩模层和掩模支撑层两层结构，所述掩膜层具有由掩模开口阵列形成的开口单元，所述掩模支撑层具有由支撑窗口阵列形成的窗口单元，所述掩模层和所述掩模支撑层之间紧密贴合；构成所述开口单元的掩模开口阵列方式与构成所述窗口单元的支撑窗口阵列方式相同，所述掩模开口与所述支撑窗口一一对应，且每个所述掩模开口设置于相应的所述支撑窗口内部；所述掩模开口的开口尺寸小于相对应的所述支撑窗口的开口尺寸，所述掩膜层的厚度不大于所述掩模支撑层的厚度。
本发明中，最终决定掩模板蒸镀效果在于掩膜层掩模开口的开口质量，在相对较薄的掩模层上可以设置质量更高的掩模开口(即制作的掩模开口边缘整齐)，具有较小的高宽比(即掩模层厚度与开口尺寸比值较小)，于本发明中，所述掩膜层的厚度范围为：2-20μm；所述掩模支撑层的厚度 范围为：20-60μm。
作为本发明的优选，所述掩膜层的厚度为：5μm、8μm、12μm、15μm或18μm；所述掩模支撑层的厚度为：25μm、30μm、35μm、40μm、45μm或50μm。
一种实施例，构成所述开口单元的掩模开口与构成所述窗口单元的支撑窗口的开口形状均为矩形，所述掩模层上所述掩模开口的边长尺寸范围为15-40μm。
另一些实施例中，构成所述开口单元的掩模开口与构成所述窗口单元的支撑窗口的开口形状均为正六边形或八边形，所述掩模层上所述掩模开口的边长尺寸范围为10-30μm。
构成所述开口单元的掩模开口与构成所述窗口单元的支撑窗口的开口形状均也可以为圆形，所述掩模层上所述掩模开口的直径尺寸范围为15-45μm。
进一步，构成所述掩模板的掩模层的材质为有机材料。
进一步，所述掩模支撑层的材质为金属材料，其优选为不锈钢、因瓦合金或者其它镍基合金。
根据本专利背景技术中对现有技术所述，传统掩模板的构成材质全部为金属合金，本发明提供了一个完全不同于现有掩模板的技术方案，本发明的小开口蒸镀用掩模板具有以下优势：由于有金属掩模支撑层的作用，可以将构成掩模板的有机掩模层做的很薄，如此在保证掩模层的掩模开口具有较小高宽比的前提下，进一步将开口的宽度尺寸做的更小，从而使得形成的最终掩模板能够蒸镀形成分辨率更高的OLED产品。
本发明附加的方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
附图说明
本发明的上述和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1所示为现有技术一种用于OLED蒸镀用掩模板的结构示意图；
图2所示为图1中A-A方向的截面放大示意图；
图3所示为本发明所涉及小开口蒸镀用掩模板实施例一的整体示意图；
图4为图3中I部分的放大示意图；
图5为图4中B-B方向的截面示意图；
图6为图4所示结构反面的示意图；
图7为与本发明所涉及掩模板实施例二的示意图；
图8为与本发明所涉及掩模板实施例三的示意图；
图9所示为采用本发明小开口蒸镀用掩模板进行蒸镀有机材料的示意图。
其中，图1中，10——由开口单元构成的掩模图案，11——掩模板，12——外框，A-A——待剖截面；
图2中，20——掩模部，21——有机材料蒸镀时的掩模开口，d1——开口21的宽度尺寸，h——掩模板厚度；
图3中，30为本发明的掩模板，I为待放大区域；
图4中，410为支撑窗口，420为掩模开口，d2为矩形掩模开口420的边长尺寸，B-B为待剖截面；
图5中，41为掩模支撑层，42为掩模层，h1为掩模支撑层41的厚度，h2为掩模层42的厚度；
图9中，90为基板，91为固定掩模板组件的固定机构，92为有机蒸镀源。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
在本发明的描述中，需要理解的是，术语“上”、“下”、“底”、“顶”、“前”、“后”、“内”、“外”、“横”、“竖”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
下面将参照附图来描述本发明所涉及的小开口蒸镀用掩模板，图3所示为本发明所涉及小开口蒸镀用掩模板实施例一的整体示意图；图4为图3中I部分的放大示意图；图5为图4中B-B方向的截面示意图；图6为图4所示结构反面的示意图；图7为与本发明所涉及掩模板实施例二的示 意图；图8为与本发明所涉及掩模板实施例三的示意图。
实施例一：
如图3所示，掩模板30上设置有阵列形式的掩模图案，其具体结构如图4、图5、图6所示。本实施例中，掩模板30包括掩模层42和掩模支撑层41两层结构，掩膜层42具有由掩模开口420阵列形成的开口单元(开口单元即为一组紧密排布的掩模开口)，掩模支撑层41具有由支撑窗口410阵列形成的窗口单元(窗口单元即为一组紧密排布的支撑窗口)，如图5所示，掩模层42和掩模支撑层41之间紧密贴合；如图4、图6所示，构成开口单元的掩模开口420阵列方式与构成窗口单元的支撑窗口410阵列方式相同，掩模开口420与支撑窗口410一一对应，且每个掩模开口420设置于相应的支撑窗口410内部(即掩模开口420的边缘处于支撑窗口410的边缘所围成的区域之内)；掩模开口420的开口尺寸小于相对应的支撑窗口410的开口尺寸，掩膜层的厚度h2不大于所述掩模支撑层41的厚度h1。
本发明中，最终决定掩模板蒸镀效果在于掩膜层42掩模开口420的开口质量，在相对较薄的掩模层42上可以设置质量更高的掩模开口420(即制作的掩模开口边缘整齐)，而且具有较小的高宽比(即掩模层厚度与开口尺寸比值较小)，较小的高宽比利于后续有材料的蒸镀。另外，构成掩模板的掩模支撑层41上的支撑窗口410具有较大的开口尺寸，其对后续有机材料的蒸镀影响较小，相对较厚(与掩膜层厚度相比较)的掩模支撑层41能够提供较为稳定的支撑座作用，亦不会由于自身的厚度问题形成 对后期有机采用的蒸镀产生影响。
于本发明中，掩膜层42的厚度h2范围为：2-20μm；掩模支撑层41的厚度h1范围为：20-60μm。
作为本发明的优选，在本发明的一些实施例中可将掩膜层42的厚度h2具体设计为：5μm、8μm、12μm、15μm或18μm；掩模支撑层41的厚度h1具体设计为：25μm、30μm、35μm、40μm、45μm或50μm。
本实施例中，构成开口单元的掩模开口420与构成窗口单元的支撑窗口410的开口形状均为矩形(优选为方形)，掩模层42上掩模开口420的边长尺寸d2范围为15-40μm。构成本实施例中的开口单元(或窗口单元)均由掩模开口(或支撑窗口)阵列构成，具体参考图4或图6。
本发明中，构成掩模板30的掩模层42的材质为有机材料，该有机材料具有成膜性能，且所成的膜层具有一定的抗破坏强度。作为优选，该有机材料为光阻或者其它具有感光性能的有机材料。
另外，构成本发明中掩模支撑层41的材质为金属材料，一般选用不锈钢、因瓦合金或者其它镍基合金，其优选为具有较小热膨胀系数的因瓦合金片材。
实施例二
本实施例中，与实施例一不同的是：构成开口单元的掩模开口420与构成窗口单元的支撑窗口410的开口形状均为正六边形或八边形，其中掩模层42上掩模开口420的边长尺寸范围为10-30μm。图7所示为单元的掩模开口420与支撑窗口410开口形状均为正六边形的示意图。(此处不 再进行八边形示例)
实施例三
本实施例中，与实施例一不同的是：构成开口单元的掩模开口420与构成窗口单元的支撑窗口410的开口形状均为圆形，其中掩模层42上掩模开口420的直径尺寸范围为15-45μm。图8所示为单元的掩模开口420与支撑窗口410开口形状均为圆形的示意图。
根据本专利背景技术中对现有技术所述，传统掩模板的构成材质全部为金属合金，本发明提供了一个完全不同于现有掩模板的技术方案，本发明的小开口蒸镀用掩模板具有以下优势：由于有金属掩模支撑层的作用，可以将构成掩模板的有机掩模层做的很薄，如此在保证掩模层的掩模开口具有较小高宽比的前提下，进一步将开口的宽度尺寸做的更小，从而使得形成的最终掩模板能够蒸镀形成分辨率更高的OLED产品。
具体而言，通过本发明制作的掩模板最终决定有机材料沉积效果为掩膜层42的掩模开口420，由于掩膜层具有有机材质的特性，其比较容易实现“轻薄”化。由于具有“轻”的特性，处于其下方的掩模支撑层41易于实现对其支撑；而“薄”的特征，使得设置于其上的开口结构42能够较为容易实现小尺寸开口设计。
图9所示为采用本发明磁性掩模板进行蒸镀有机材料的示意图，在密封腔室中，装配在外框12上的掩模板30通过外框12固定在固定机构91上，掩模板30上部设置有待蒸镀的基板90，下部设置有有机蒸镀源92， 有机蒸镀源92中的有机材料通过蒸发扩散到腔室内部，扩散的有机材料在经过掩模板30的支撑窗口、掩模开口后沉积到基板90上形成有机发光层。一般基板背后设置有磁性吸附装置。
本发明所涉及的掩模板保留有金属层结构，其具备传统掩模板的磁性，在后期应用过程中，可被基板背后的磁性吸附设备吸附，可进一步减小掩模板的下垂量。
(以上实施例所展示的掩模板均为一整体结构，即一件完整的掩模板产品只具备一块本发明所述的掩模板；然而在实际应用过程中，一件完整的掩模板产品可以选择采用多块掩模板拼接形成)本次PCT阶段需要补充的内容
本发明中，任何提及“一个实施例”、“实施例”、“示意性实施例”等意指结合该实施例描述的具体构件、结构或者特点包含于本发明的至少一个实施例中。在本说明书各处的该示意性表述不一定指的是相同的实施例。而且，当结合任何实施例描述具体构件、结构或者特点时，所主张的是，结合其他的实施例实现这样的构件、结构或者特点均落在本领域技术人员的范围之内。
尽管参照本发明的多个示意性实施例对本发明的具体实施方式进行了详细的描述，但是必须理解，本领域技术人员可以设计出多种其他的改进和实施例，这些改进和实施例将落在本发明原理的精神和范围之内。具体而言，在前述公开、附图以及权利要求的范围之内，可以在零部件和/或者从属组合布局的布置方面作出合理的变型和改进，而不会脱离本发明的精神。除了零部件和/或布局方面的变型和改进，其范围由所附权利要 求及其等同物限定。

Claims (8)

  1. 一种小开口蒸镀用掩模板，所述掩模板包括掩模层和掩模支撑层两层结构，所述掩膜层具有由掩模开口阵列形成的开口单元，所述掩模支撑层具有由支撑窗口阵列形成的窗口单元，其特征在于：所述掩模层和所述掩模支撑层之间紧密贴合；构成所述开口单元的掩模开口阵列方式与构成所述窗口单元的支撑窗口阵列方式相同，所述掩模开口与所述支撑窗口一一对应，且每个所述掩模开口设置于相应的所述支撑窗口内部；所述掩模开口的开口尺寸小于相对应的所述支撑窗口的开口尺寸，所述掩膜层的厚度不大于所述掩模支撑层的厚度。
  2. 根据权利要求1所述的小开口蒸镀用掩模板，其特征在于，所述掩膜层的厚度范围为：2-20μm；所述掩模支撑层的厚度范围为：20-60μm。
  3. 根据权利要求2所述的小开口蒸镀用掩模板，其特征在于，所述掩膜层的厚度为：5μm、8μm、12μm、15μm或18μm；所述掩模支撑层的厚度为：25μm、30μm、35μm、40μm、45μm或50μm。
  4. 根据权利要求1所述的小开口蒸镀用掩模板，其特征在于，构成所述开口单元的掩模开口与构成所述窗口单元的支撑窗口的开口形状均为矩形，所述掩膜层上所述掩模开口的边长尺寸范围为15-40μm。
  5. 根据权利要求1所述的小开口蒸镀用掩模板，其特征在于，构成所述开口单元的掩模开口与构成所述窗口单元的支撑窗口的开口形状均为正六边形或八边形，所述掩膜层上所述掩模开口的边长尺寸范围为10-30μm。
  6. 根据权利要求1所述的小开口蒸镀用掩模板，其特征在于，构成所 述开口单元的掩模开口与构成所述窗口单元的支撑窗口的开口形状均为圆形，所述掩膜层上所述掩模开口的直径尺寸范围为15-45μm。
  7. 根据权利要求1所述的小开口蒸镀用掩模板，其特征在于，构成所述掩模板的掩膜层的材质为有机材料。
  8. 根据权利要求1所述的小开口蒸镀用掩模板，其特征在于，所述掩模支撑层的材质为不锈钢、因瓦合金或者其它镍基合金。
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