WO2021258892A1 - 蒸镀用掩膜版 - Google Patents

蒸镀用掩膜版 Download PDF

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Publication number
WO2021258892A1
WO2021258892A1 PCT/CN2021/093382 CN2021093382W WO2021258892A1 WO 2021258892 A1 WO2021258892 A1 WO 2021258892A1 CN 2021093382 W CN2021093382 W CN 2021093382W WO 2021258892 A1 WO2021258892 A1 WO 2021258892A1
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WO
WIPO (PCT)
Prior art keywords
mask
area
thickness
plane
region
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PCT/CN2021/093382
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English (en)
French (fr)
Inventor
黄琰
马益
嵇凤丽
罗昶
张国梦
李剑波
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US17/921,876 priority Critical patent/US20230167536A1/en
Publication of WO2021258892A1 publication Critical patent/WO2021258892A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Definitions

  • the present disclosure relates to the technical field of mask plates, and in particular, to mask plates for vapor deposition.
  • the metal mask on which common functional layers such as HTL (hole transport layer), ETL (electron transport layer), and Cathode (cathode) are vapor-deposited is called Common Metal Mask.
  • Each functional layer passes through a common metal mask.
  • the film plates are sequentially vapor-deposited and deposited on the substrate.
  • General metal masks have a certain amount of sagging due to their own weight.
  • Metal masks commonly used for large displays such as mobile phones have a small amount of sagging.
  • Wearables (such as watches, bracelets and other small displays) are used for small displays.
  • the sagging amount of the mask is relatively large.
  • Figure 3 shows the sagging trend of the existing general metal mask.
  • the cell opening area of the general metal mask for 7-inch mobile phones accounts for about 78% of the entire mask area, while the mask opening area for the 1.3-inch wearable display only accounts for the entire mask.
  • the area of the mask is 50%. Therefore, in the case of the same thickness of the mask material, the general metal mask for wearable display screens will have a greater sag. Excessive sagging will affect the position accuracy of the mask, and increase the Shadow (shadow refers to the uneven film thickness generated at the edge of the cell opening when the vapor deposition material is vaporized by the vapor deposition mask (the film thickness is the film layer) 5%-95% of the normal thickness)), which reduces the quality of vapor deposition.
  • an objective of the present disclosure is to provide a mask for vapor deposition, which has a small sag during vapor deposition, improves the position accuracy of the mask, or can effectively reduce shadows.
  • the present disclosure provides a mask for vapor deposition.
  • the mask for vapor deposition includes a plurality of predetermined regions, each of the predetermined regions includes an opening and a shielding region surrounding the opening, and in a direction away from the opening, the shielding region It includes a first area, a second area, and a third area.
  • the second area connects the first area and the third area in the horizontal direction, respectively.
  • the first area A zone has a first surface and a second surface oppositely arranged
  • the second zone has a third surface and a fourth surface oppositely arranged
  • the third zone has a fifth surface and a sixth surface oppositely arranged.
  • the first surface, the third surface, and the fifth surface are located on the same side of the mask and are located away from the substrate during evaporation.
  • the second surface, the fourth surface and the sixth surface The surface is located on the same side of the mask and is arranged close to the substrate during evaporation, wherein the thickness of the second region is greater than the thickness of the first region and greater than the thickness of the third region, the The first surface is flush with the third surface, and in the thickness direction of the mask, the plane on which the sixth surface is located is between the plane on which the third surface is located and the plane on which the fourth surface is located. between.
  • the thickness of the third zone is reduced, thereby reducing the overall weight of the mask, which can reduce the amount of sagging of the mask during the evaporation process, thereby improving the mask
  • the accuracy of the position, the reduction of shadows, and the improvement of the evaporation quality are more conducive to the realization of the design of the narrow frame of the display screen.
  • the plane on which the fifth surface is located is between the plane on which the third surface is located and the plane on which the fourth surface is located.
  • the plane on which the first surface is located is between the plane on which the third surface is located and the plane on which the fourth surface is located.
  • the vertical distance between the fourth surface and the sixth surface is 1/5 to 1/3 of the thickness of the second region.
  • the vertical distance between the third surface and the fifth surface is 1/10 to 1/4 of the thickness of the second region.
  • the vertical distance between the third surface and the first surface is 1/10 to 1/4 of the thickness of the second region.
  • the orthographic projection of the sixth surface on the fifth surface completely overlaps the fifth surface.
  • the orthographic projection of the first surface on the second surface completely overlaps the second surface.
  • the thickness of the second region is 100-150 microns.
  • the width of the second zone is greater than or equal to 1 mm.
  • the fifth surface is a rough surface.
  • the orthographic projection of the second surface on the substrate covers the first retaining wall, the second retaining wall and the anti-cracking retaining wall on the substrate, wherein all
  • the substrate includes a display area and a frame area. In a direction away from the display area, the frame area is sequentially provided with the first retaining wall, the second retaining wall, and the anti-cracking retaining wall.
  • FIG. 1 is a schematic diagram of the structure of a mask in an embodiment of the present disclosure
  • Figure 2 is a cross-sectional view along AA' in Figure 1;
  • FIG. 3 is a schematic diagram of the structure of a mask in another embodiment of the present disclosure.
  • FIG. 4 is a schematic diagram of the structure of a mask in another embodiment of the present disclosure.
  • FIG. 5 is a schematic diagram of the structure of the mask and the substrate correspondingly arranged in another embodiment of the present disclosure.
  • the present disclosure provides a mask for vapor deposition.
  • the vapor deposition mask 100 includes a plurality of predetermined regions 110, each of which includes an opening 111 and a shielding area 112 surrounding the opening, in a direction away from the opening 111
  • the shielding area 112 includes a first area 120, a second area 130, and a third area 140.
  • the second area 130 is connected to the first area 120 and the third area 140 in the horizontal direction.
  • the first zone 120 has a first surface 121 and a second surface 122 oppositely arranged
  • the second zone 130 has a third surface 131 and a fourth surface 132 oppositely arranged
  • the third zone 140 has a first surface 121 and a second surface 122 oppositely arranged.
  • the five surfaces 141 and the sixth surface 142, the first surface 121, the third surface 131, and the fifth surface 141 are located on the same side of the mask 100, and are located away from the substrate during evaporation (that is, located near the evaporation source during evaporation) ,
  • the second surface 122, the fourth surface 132, and the sixth surface 142 are located on the same side of the mask 100, and are located far and close during evaporation (that is, located away from the evaporation source during evaporation), wherein the second area 130
  • the thickness is greater than the thickness of the first region 120 and greater than the thickness of the third region 140.
  • the first surface 121 is flush with the third surface 131.
  • the plane on which the sixth surface 142 is located is located on the Between the plane where the third surface 131 is located and the plane where the fourth surface 132 is located.
  • the thickness of the third zone is reduced, thereby reducing the overall weight of the mask, which can reduce the amount of sagging of the mask during the evaporation process, thereby improving the mask.
  • the position accuracy of the mask, the reduction of shadows, and the improvement of the evaporation quality are more conducive to the realization of the design of the narrow frame of the display; moreover, the second zone is used to support the substrate (that is, the evaporation on the substrate) during the evaporation of the mask.
  • the contact of the common functional layer of the plated OLED device) ensures the stability during the evaporation process.
  • the thickness of the second zone is the same as that of the third zone. Due to its heavy weight, it droops during the vapor deposition process, resulting in larger shadows and affecting the mask. The position accuracy of the film plate and the quality of vapor deposition.
  • the thickness of the third region is reduced to reduce the weight of the mask, thereby reducing the sagging amount of the mask, improving the position accuracy of the mask, and further improving the evaporation quality.
  • the vapor deposition mask of the present disclosure can be used to vaporize common functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and a cathode in an OLED device.
  • the thickness a of the second region is 100-150 microns, such as 100 microns, 105 microns, 110 microns, 115 microns, 120 microns, 125 microns, 130 microns, 135 microns, 140 microns, 145 microns or 150 microns. Therefore, the second zone within the above thickness range can effectively ensure the usability of the mask and the quality of vapor deposition.
  • the vertical distance between the fourth surface 132 and the sixth surface 142 is 1/5 to 1/3 (such as 1/5, 1/4.5, 1/4, 1/3.5, 1/3). Therefore, the weight of the mask can be effectively reduced, and at the same time, the good performance of the mask can be ensured; if the vertical distance between the fourth surface 132 and the sixth surface 142 is greater than 1/3, the mask When etching and thinning, it is easy to cause the mask to be cut through, which affects the use of the mask.
  • the plane where the fifth surface 141 is located is between the plane where the third surface 131 is located and the plane where the fourth surface 132 is located.
  • the thickness of the third region is further reduced to reduce the weight of the mask itself, thereby reducing the amount of sagging of the mask when the screen is opened, thereby reducing shadows, and improving the position accuracy and evaporation quality of the mask.
  • the vertical distance between the third surface 131 and the fifth surface 141 is 1/10 to 1/4 of the thickness a of the second region 130 (1/10, 1/9, 1/8, 1 /7, 1/6, 1/5, 1/4).
  • the vertical distance between the third surface 131 and the fifth surface 141 is greater than 1/4, it is easy to cause the mask. The sagging part of the mask will jitter in a waveform, which will affect the normal use of the mask.
  • the orthographic projection of the sixth surface 142 on the fifth surface 141 completely overlaps the fifth surface 141.
  • the stability of the mask structure can be effectively ensured, thereby ensuring the quality of vapor deposition.
  • the fifth surface is a rough surface.
  • the specific surface area of the fifth surface is larger.
  • the fifth surface can absorb more vapor deposition material (the vapor deposition material will be adsorbed on the surface of the mask away from the substrate during vapor deposition), and then It can reduce the number of times of cleaning the mask and increase the frequency and service life of the mask.
  • the roughness of the rough surface There is no special restriction on the roughness of the rough surface, and those skilled in the art can flexibly design according to actual conditions such as masks.
  • the plane where the first surface 121 is located is between the plane where the third surface 131 is located and the plane where the fourth surface 132 is located.
  • the thickness of the first region is further reduced, the weight of the mask is reduced, and the amount of sagging of the mask when the screen is stretched is reduced, thereby reducing shadows, and improving the position accuracy and evaporation quality of the mask.
  • the vertical distance between the third surface 131 and the first surface 121 is 1/10 to 1/4 of the thickness a of the second region (such as 1/10, 1/9, 1/8, 1 /7, 1/6, 1/5, 1/4).
  • the vertical distance between the third surface 131 and the first surface 121 is greater than 1/4, it is easy to cause the mask. The sagging part of the mask will jitter in a waveform, which will affect the normal use of the mask.
  • the orthographic projection of the first surface 121 on the second surface 122 completely overlaps the second surface 122.
  • the stability of the mask structure can be effectively ensured, thereby ensuring the quality of vapor deposition.
  • the vertical distance between the second surface 122 and the fourth surface 132 is 1/5 to 1/3 (such as 1/5, 1/4.5, 1/4, 1/3.5, 1/ 3).
  • the width c of the second zone is greater than or equal to 1 mm, such as 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, etc. Therefore, the stability of the supporting substrate in the second region can be effectively ensured during the evaporation of the mask; if it is less than 1 mm, the supporting effect on the substrate will be relatively poor, which will affect the stability during the evaporation.
  • the width of the first area, the width c of the second area, the width of the third area, and the specific size of the opening can be determined by those skilled in the art according to the specific size of the frame area of the display panel and the shape of the display panel (such as a circle or a square) ,
  • the arrangement of multiple display panels during evaporation can be flexibly designed, as long as it meets the previous limitation requirements for the first, second and third areas and achieves a good evaporation effect.
  • the orthographic projection of the second surface 122 on the substrate 200 covers the first retaining wall 210, the second retaining wall 220, and the anti-cracking retaining wall 230 on the substrate 200.
  • the substrate 200 includes a display area 201 and a frame area 202. In a direction away from the display area 201, the frame area 202 is sequentially provided with a first retaining wall 210, a second retaining wall 220, and an anti-cracking retaining wall 230.
  • the mask during the evaporation process, it is possible to prevent the mask from scratching the substrate structure corresponding to the retaining wall (including the first retaining wall 210, the second retaining wall 220, and the anti-cracking retaining wall 230), thereby avoiding the evaporation.
  • the circuit at the position of the retaining wall will be adversely affected, so as to ensure the good performance of the display area.
  • the orthographic projection of the second surface 122 on the substrate 200 only covers the first retaining wall 210 and the second retaining wall 220 on the substrate 200, and does not cover the anti-cracking retaining wall 230 (that is, the second surface 122 is on the substrate 200).
  • the orthographic projection on 200 is located on the side of the anti-cracking retaining wall close to the display area, and the orthographic projection of the second area 130 on the substrate covers the anti-cracking retaining wall 230).
  • the area is easily scratched to the packaging structure between the second retaining wall and the anti-cracking retaining wall, which in turn affects the corresponding circuit structure here, and further affects the display quality of the display area.
  • the present disclosure requires that the orthographic projection of the second surface 122 on the substrate 200 covers the first retaining wall 210, the second retaining wall 220, and the anti-cracking retaining wall 230 on the substrate 200, which can effectively improve the above problems and avoid the evaporation process. It will adversely affect the circuit at the position of the retaining wall, so as to ensure the good performance of the display area.
  • the mask can be used to evaporate the common functional layer of OLED devices in small display screens such as wearables (such as watches and bracelets), which can significantly reduce the sagging amount of the mask. .
  • the thinning of the first region and the third region in the mask can be performed by an etching process, wherein the rough surface of the fifth surface is achieved by etching different depths.
  • first and second in the text are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the present disclosure, “plurality” means two or more, unless otherwise specifically defined.

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  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
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  • Physical Vapour Deposition (AREA)

Abstract

本公开提供了蒸镀用掩膜版。蒸镀用掩膜版包括多个预定区域，预定区域包括开口和遮挡区，遮挡区包括第一区、第二区和第三区，第一区具有第一表面和第二表面，第二区具有第三表面和第四表面，第三区具有第五表面和第六表面，第一表面、第三表面和第五表面位于掩膜版的同一侧，第二表面、第四表面和第六表面位于掩膜版的同一侧，第二区的厚度大于第一区的厚度和第三区的厚度，第一表面与第三表面齐平，第六表面所在的平面位于第三表面所在的平面和第四表面所在的平面之间。

Description

蒸镀用掩膜版
优先权信息
本申请请求2020年06月22日向中国国家知识产权局提交的、专利申请号为202010573468.5的专利申请的优先权和权益，并且通过参照将其全文并入此处。
技术领域
本公开涉及掩膜版技术领域，具体的，涉及蒸镀用掩膜版。
背景技术
蒸镀HTL(空穴传输层)、ETL(电子传输层)、Cathode(阴极)等公共功能层的金属掩膜版称为通用金属掩膜版(Common Metal Mask)，各功能层通过通用金属掩膜版依次蒸镀沉积到基板上。通用金属掩膜版因自重影响有一定下垂量，常用手机类等大显示屏用的金属掩膜版下垂量较小，穿戴类(比如手表、手环等小显示屏)小显示屏用的掩膜版的下垂量较大，图3所示为现有通用金属掩膜版的下垂量趋势。一般而言，7英寸的手机类用的通用金属掩膜版的cell开口域面积约占整张掩膜版面积78％，而1.3英寸的穿戴类显示屏用的掩膜版开口面积只占整张掩膜版面积的50％，所以，同样厚度的掩膜版原材情况下，穿戴类显示屏用的通用金属掩膜版的下垂量会更大。下垂量过大会影响掩膜版的位置精度，增加Shadow(阴影，是指蒸镀材料通过蒸镀掩膜版蒸镀时，在cell开口边缘产生的膜厚不均匀区域(膜层厚度为膜层正常厚度的5％～95％))，降低蒸镀的质量。
因此，关于蒸镀用掩膜版的研究有待深入。
发明内容
本公开旨在至少在一定程度上解决相关技术中的技术问题之一。为此，本公开的一个目的在于提出一种蒸镀用掩膜版，该掩膜版在蒸镀时的下垂量较小，提升掩膜版的位置精度，或可以有效减小阴影。
在本公开的一个方面，本公开提供了一种蒸镀用掩膜版。根据本公开的实施例，该蒸镀用掩膜版包括多个预定区域，每个所述预定区域包括开口和围绕所述开口的遮挡区，在远离所述开口的方向上，所述遮挡区包括第一区、第二区和第三区，所述第二区在水平方向上分别连接所述第一区和所述第三区，在所述掩膜版的厚度方向上，所述第一区具有相对设置的第一表面和第二表面，所述第二区具有相对设置的第三表面和第四表面， 所述第三区具有相对设置的第五表面和第六表面，所述第一表面、所述第三表面和所述第五表面位于所述掩膜版的同一侧，且在蒸镀时远离基板设置，所述第二表面、所述第四表面和所述第六表面位于所述掩膜版的同一侧，且在蒸镀时靠近基板设置，其中，所述第二区的厚度大于所述第一区的厚度，且大于所述第三区的厚度，所述第一表面与所述第三表面齐平，在所述掩膜版的厚度方向上，所述第六表面所在的平面位于所述第三表面所在的平面和所述第四表面所在的平面之间。由此，相对于第二区的厚度，减薄了第三区的厚度，进而减轻了掩膜版的整体重量，从而可以减轻掩膜版在蒸镀过程中的下垂量，进而提高掩膜版的位置精度，减小阴影，提高蒸镀品质，更有利于实现显示屏的窄边框的设计。
根据本公开的实施例，在所述掩膜版的厚度方向上，所述第五表面所在的平面位于所述第三表面所在的平面和所述第四表面所在的平面之间。
根据本公开的实施例，在所述掩膜版的厚度方向上，所述第一表面所在的平面位于所述第三表面所在的平面和所述第四表面所在的平面之间。
根据本公开的实施例，所述第四表面和所述第六表面之间的垂直间距为所述第二区厚度的1/5～1/3。
根据本公开的实施例，所述第三表面和所述第五表面之间的垂直间距为所述第二区厚度的1/10～1/4。
根据本公开的实施例，所述第三表面和所述第一表面之间的垂直间距为所述第二区厚度的1/10～1/4。
根据本公开的实施例，在所述掩膜版的厚度方向上，所述第六表面在所述第五表面上的正投影与所述第五表面完全重叠。
根据本公开的实施例，在所述掩膜版的厚度方向上，所述第一表面在所述第二表面上的正投影与所述第二表面完全重叠。
根据本公开的实施例，所述第二区的厚度为100～150微米。
根据本公开的实施例，所述第二区的宽度大于等于1mm。
根据本公开的实施例，所述第五表面为粗糙表面。
根据本公开的实施例，所述掩膜版使用时，所述第二表面在基板上的正投影覆盖所述基板上的第一挡墙、第二挡墙和防裂挡墙，其中，所述基板包括显示区和边框区，在远离所述显示区的方向上，所述边框区中依次设有所述第一挡墙、所述第二挡墙和所述防裂挡墙。
附图说明
图1是本公开一个实施例中掩膜版的结构示意图；
图2是图1中沿AA’的截面图；
图3是本公开另一个实施例中掩膜版的结构示意图；
图4是本公开又一个实施例中掩膜版的结构示意图；
图5是本公开又一个实施例中掩膜版与基板对应设置的结构示意图。
发明详细描述
下面详细描述本公开的实施例。下面描述的实施例是示例性的，仅用于解释本公开，而不能理解为对本公开的限制。实施例中未注明具体技术或条件的，按照本领域内的文献所描述的技术或条件或者按照产品说明书进行。
在本公开的一个方面，本公开提供了一种蒸镀用掩膜版。根据本公开的实施例，参照图1和图2，该蒸镀用掩膜版100包括多个预定区域110，每个预定区域包括开口111和围绕开口的遮挡区112，在远离开口111的方向X上，遮挡区112包括第一区120、第二区130和第三区140，第二区130在水平方向上分别连接所述第一区120和第三区140，在掩膜版100的厚度方向Y上，第一区120具有相对设置的第一表面121和第二表面122，第二区130具有相对设置的第三表面131和第四表面132，第三区140具有相对设置的第五表面141和第六表面142，第一表面121、第三表面131、第五表面141位于掩膜版100的同一侧，且在蒸镀时远离基板设置(即蒸镀时靠近蒸发源设置)，第二表面122、第四表面132和第六表面142位于掩膜版100的同一侧，且在蒸镀时远离靠近设置(即蒸镀时远离蒸发源设置)，其中，第二区130的厚度大于第一区120的厚度，且大于第三区140的厚度，第一表面121与第三表面131齐平，在掩膜版100的厚度方向Y上，第六表面142所在的平面位于第三表面131所在的平面和第四表面132所在的平面之间。由此，相对于第二区的厚度，减薄了第三区的厚度，进而减轻了掩膜版的整体重量，从而可以减轻掩膜版在蒸镀过程中的下垂量，进而提高掩膜版的位置精度，减小阴影，提高蒸镀品质，更有利于实现显示屏的窄边框的设计；而且，在掩膜版蒸镀的过程中第二区用于支撑与基板(即在基板上蒸镀OLED器件的公共功能层)的接触，保证蒸镀过程中的稳定性。
目前的蒸镀用掩膜版中，第二区的厚度与第三区的厚度一致，由于其自身的重量较重，导致其在蒸镀过程中下垂量较大，导致阴影较大，影响掩膜版的位置精度和蒸镀质量。在本公开中将第三区的厚度减薄，减轻掩膜版的自身重量，进而减小掩膜版的下垂量，提升掩膜版的位置精度，且可以进一步提升蒸镀质量。
其中，本公开的蒸镀用掩膜版可以用于蒸镀OLED器件中的空穴注入层、空穴传输层、 电子传输层、电子注入层和阴极等公共功能层。
根据本公开的实施例，第二区的厚度a为100～150微米，比如100微米、105微米、110微米、115微米、120微米、125微米、130微米、135微米、140微米、145微米或150微米。由此，上述厚度范围内的第二区，可以有效保证掩膜版的使用性能和蒸镀质量。
根据本公开的实施例，第四表面132和第六表面142之间的垂直间距为第二区130厚度a的1/5～1/3(比如1/5、1/4.5、1/4、1/3.5、1/3)。由此，既可以有效减轻掩膜版的重量，而且同时保证掩膜版良好的使用性能；若第四表面132和第六表面142之间的垂直间距大于1/3，则在对掩膜版进行刻蚀减薄时容易导致掩膜版刻穿，影响掩膜版的使用。
根据本公开的实施例，参照图3，在掩膜版的厚度方向Y上，第五表面141所在的平面位于第三表面131所在的平面和第四表面132所在的平面之间。如此，进一步将第三区的厚度减薄，减轻掩膜版的自身重量，进而降低掩膜版在张网时的下垂量，进而减小阴影，提升掩膜版的位置精度和蒸镀品质。
根据本公开的实施例，第三表面131和第五表面141之间的垂直间距为第二区130厚度a的1/10～1/4(1/10、1/9、1/8、1/7、1/6、1/5、1/4)。由此，不仅可以进一步减小掩膜版的自身重量，而且同时保证掩膜版良好的使用性能；若第三表面131和第五表面141之间的垂直间距大于1/4，则容易导致掩膜版的下垂部分会呈波形抖动，影响掩膜版的正常使用。
根据本公开的实施例，参照图3，在掩膜版的厚度方向上，第六表面142在第五表面141上的正投影与第五表面141完全重叠。由此，可以有效保证掩膜版结构的稳定性，进而保证蒸镀的质量。
根据本公开的实施例，第五表面为粗糙表面。由此，第五表面的比表面积较大，在蒸镀时，第五表面可以吸附更多的蒸镀材料(蒸镀时会有蒸镀材料吸附在掩膜版远离基板的表面上)，进而可以减少对掩膜版的清洗次数，增加掩膜版的使用频率和使用寿命。其中，粗糙表面的粗糙度没有特别的限制要求，本领域技术人员可以根据掩膜版等实际情况灵活设计。
根据本公开的实施例，参照图4，在掩膜版的厚度方向Y上，第一表面121所在的平面位于第三表面131所在的平面和第四表面132所在的平面之间。如此，进一步将第一区的厚度减薄，减轻掩膜版的自身重量，进而降低掩膜版在张网时的下垂量，进而减小阴影，提升掩膜版的位置精度和蒸镀品质。
根据本公开的实施例，第三表面131和第一表面121之间的垂直间距为第二区厚度a的1/10～1/4(比如1/10、1/9、1/8、1/7、1/6、1/5、1/4)。由此，不仅可以进一步减小掩膜版的自身重量，而且同时保证掩膜版良好的使用性能；若第三表面131和第一表面121之间的垂直间距大于1/4，则容易导致掩膜版的下垂部分会呈波形抖动，影响掩膜版的正常使 用。
根据本公开的实施例，参照图4，在掩膜版的厚度方向Y上，第一表面121在第二表面122上的正投影与第二表面122完全重叠。由此，可以有效保证掩膜版结构的稳定性，进而保证蒸镀的质量。
其中，第二表面122和第四表面132之间的垂直间距为第二区厚度a的1/5～1/3(比如1/5、1/4.5、1/4、1/3.5、1/3)。由此，既可以有效减轻掩膜版的重量，而且同时保证掩膜版良好的使用性能。
根据本公开的实施例，第二区的宽度c大于等于1mm，比如1mm、1.5mm、2mm、2.5mm、3mm、3.5mm、4mm等。由此，在掩膜版蒸镀的过程中可有效保证第二区支撑基板的稳定性；若小于1mm，则会导致对基板的支撑效果相对较差，影响蒸镀过程中的稳定性。
其中，第一区的宽度、第二区的宽度c、第三区的宽度以及开口的具体大小本领域技术人员可以根据显示面板边框区的具体尺寸、显示面板的形状(比如圆形或方形)、蒸镀时多个显示面板的排布等实际情况灵活设计，只要满足前面对第一区、第二区和第三区的限定要求、达到良好的蒸镀效果即可。
根据本公开的实施例，参照图5，掩膜版使用时，第二表面122在基板200上的正投影覆盖基板200上的第一挡墙210、第二挡墙220和防裂挡墙230，其中，基板200包括显示区201和边框区202，在远离显示区201的方向上，边框区202中依次设有第一挡墙210、第二挡墙220和防裂挡墙230。由此，在蒸镀的过程中，可以避免掩膜版对挡墙(包括第一挡墙210、第二挡墙220和防裂挡墙230)对应的基板结构的刮擦，进而避免蒸镀过程中对挡墙位置处的电路造成不良影响，从而保证显示区的良好性能。
需要说明的是，若第二表面122在基板200上的正投影仅覆盖基板200上的第一挡墙210、第二挡墙220，不覆盖防裂挡墙230(即第二表面122在基板200上的正投影位于防裂挡墙靠近显示区的一侧，第二区130在基板上的正投影覆盖防裂挡墙230)，发明人发现，在蒸镀时，掩膜版的第二区很容易刮擦到第二挡墙和防裂挡墙之间的封装结构，进而影响此处对应设置的电路结构，进而影响显示区的显示质量。然而本公开要求第二表面122在基板200上的正投影覆盖基板200上的第一挡墙210、第二挡墙220和防裂挡墙230，可以有效地改善上述问题，避免蒸镀过程中对挡墙位置处的电路造成不良影响，从而保证显示区的良好性能。
根据本公开的实施例，该掩膜版可以用于蒸镀穿戴类(比如手表和手环等)等小显示屏中OLED器件的公共功能层，可以很明显地减小掩膜版的下垂量。
根据本公开的实施例，对掩膜版中第一区和第三区的减薄可以通过刻蚀工艺进行，其中第五表面的粗糙表面即是通过刻蚀不同的深度而实现的。
文中术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本公开的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本公开的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本公开的限制，本领域的普通技术人员在本公开的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (12)

  1. 一种蒸镀用掩膜版，其特征在于，包括多个预定区域，每个所述预定区域包括开口和围绕所述开口的遮挡区，在远离所述开口的方向上，所述遮挡区包括第一区、第二区和第三区，所述第二区在水平方向上分别连接所述第一区和所述第三区，在所述掩膜版的厚度方向上，所述第一区具有相对设置的第一表面和第二表面，所述第二区具有相对设置的第三表面和第四表面，所述第三区具有相对设置的第五表面和第六表面，所述第一表面、所述第三表面和所述第五表面位于所述掩膜版的同一侧，且在蒸镀时远离基板设置，所述第二表面、所述第四表面和所述第六表面位于所述掩膜版的同一侧，且在蒸镀时靠近所述基板设置，
    其中，所述第二区的厚度大于所述第一区的厚度，且大于所述第三区的厚度，所述第一表面与所述第三表面齐平，在所述掩膜版的厚度方向上，所述第六表面所在的平面位于所述第三表面所在的平面和所述第四表面所在的平面之间。
  2. 根据权利要求1所述的掩膜版，其特征在于，在所述掩膜版的厚度方向上，所述第五表面所在的平面位于所述第三表面所在的平面和所述第四表面所在的平面之间。
  3. 根据权利要求1或2所述的掩膜版，其特征在于，在所述掩膜版的厚度方向上，所述第一表面所在的平面位于所述第三表面所在的平面和所述第四表面所在的平面之间。
  4. 根据权利要求1～3中任一项所述的掩膜版，其特征在于，所述第四表面和所述第六表面之间的垂直间距为所述第二区厚度的1/5～1/3。
  5. 根据权利要求2所述的掩膜版，其特征在于，所述第三表面和所述第五表面之间的垂直间距为所述第二区厚度的1/10～1/4。
  6. 根据权利要求3～5中任一项所述的掩膜版，其特征在于，所述第三表面和所述第一表面之间的垂直间距为所述第二区厚度的1/10～1/4。
  7. 根据权利要求2～6中任一项所述的掩膜版，其特征在于，在所述掩膜版的厚度方向上，所述第六表面在所述第五表面上的正投影与所述第五表面完全重叠。
  8. 根据权利要求1～6中任一项所述的掩膜版，其特征在于，在所述掩膜版的厚度方向上，所述第一表面在所述第二表面上的正投影与所述第二表面完全重叠。
  9. 根据权利要求1～8中任一项所述的掩膜版，其特征在于，所述第二区的厚度为100～150微米。
  10. 根据权利要求1～9中任一项所述的掩膜版，其特征在于，所述第二区的宽度大于等于1mm。
  11. 根据权利要求2～10中任一项所述的掩膜版，其特征在于，所述第五表面为粗糙表面。
  12. 根据权利要求1～11中任一项所述的掩膜版，其特征在于，所述掩膜版使用时，所述第二表面在基板上的正投影覆盖所述基板上的第一挡墙、第二挡墙和防裂挡墙，其中，所述基板包括显示区和边框区，在远离所述显示区的方向上，所述边框区中依次设有所述第一挡墙、所述第二挡墙和所述防裂挡墙。
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