WO2016136447A1 - Procédé de polissage de substrat chargé négativement et procédé de fabrication de substrat chargé négativement présentant une caractéristique de lissé de surface élevée - Google Patents

Procédé de polissage de substrat chargé négativement et procédé de fabrication de substrat chargé négativement présentant une caractéristique de lissé de surface élevée Download PDF

Info

Publication number
WO2016136447A1
WO2016136447A1 PCT/JP2016/053699 JP2016053699W WO2016136447A1 WO 2016136447 A1 WO2016136447 A1 WO 2016136447A1 JP 2016053699 W JP2016053699 W JP 2016053699W WO 2016136447 A1 WO2016136447 A1 WO 2016136447A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
abrasive
abrasive slurry
substrate
slurry
Prior art date
Application number
PCT/JP2016/053699
Other languages
English (en)
Japanese (ja)
Inventor
寿夫 小泉
勇児 川▲崎▼
高橋　直人
大樹 橋本
加藤　良一
務 山本
勝 見上
瑞穂 和田
Original Assignee
堺化学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 堺化学工業株式会社 filed Critical 堺化学工業株式会社
Priority to JP2017502041A priority Critical patent/JP6665852B2/ja
Publication of WO2016136447A1 publication Critical patent/WO2016136447A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a method for polishing a negatively chargeable substrate and a method for producing a negatively chargeable substrate having high surface smoothness.
  • a typical example of the negatively chargeable substrate is a glass substrate.
  • the glass substrate can be polished with an abrasive to give a precise optical glass product that requires high transparency and accuracy such as a lens and a prism.
  • cerium oxide-based abrasives are produced by firing and pulverizing minerals rich in so-called rare earths (rare earths), but the demand for rare earths has increased and supply has become unstable. Therefore, development of a technique for reducing the amount of cerium oxide used and a technique using an alternative material is desired. However, such a request is required in a polishing method (for example, the method of Patent Document 1) that essentially uses cerium oxide. Can not respond to.
  • the present inventor variously studied a method for polishing a negatively chargeable substrate typified by a glass substrate, and a step of polishing under a condition in which the zeta potential of an abrasive slurry containing a predetermined oxide and zirconium oxide is positive.
  • a negatively chargeable substrate that is excellent in surface smoothness while realizing a high polishing rate by performing a and a step b in which polishing is performed under a condition in which the zeta potential of the abrasive slurry is negative at least once.
  • the present invention has been completed by conceiving that the above problems can be solved brilliantly.
  • the present invention is a method of polishing a negatively charged substrate using an abrasive slurry
  • the abrasive slurry has a composition formula: ABO 3 (A represents at least one element selected from the group consisting of Sr and Ca. B represents at least one selected from the group consisting of Ti, Zr and Hf.
  • the polishing method includes a polishing step a in which a negatively chargeable substrate is polished under a condition that the zeta potential of the abrasive slurry is positive, and a negatively chargeable substrate is polished under a condition in which the zeta potential of the abrasive slurry is negative. This is a method for polishing a negatively chargeable substrate, wherein the polishing step b is performed at least once each.
  • the oxide is preferably SrZrO 3 and / or CaZrO 3 .
  • the abrasive slurry contains strontium zirconate (SrZrO 3 ) and / or calcium zirconate (CaZrO 3 ) and zirconium oxide (ZrO 2 )
  • a higher polishing rate can be realized.
  • the oxide is SrZrO 3 .
  • the polishing step a is preferably performed under conditions where the pH of the abrasive slurry is greater than the isoelectric point of the negatively chargeable substrate and less than the isoelectric point of the abrasive slurry.
  • the burden on the polishing apparatus / apparatus is reduced, so that the manufacturing method is more advantageous in terms of work and it is possible to sufficiently prevent the abrasive from dissolving under strong acid. Further, the polishing rate can be further increased.
  • the polishing step b is preferably carried out under conditions where the pH of the abrasive slurry is greater than the isoelectric point of the abrasive slurry and is 13 or less.
  • the burden on the polishing apparatus / apparatus is reduced, so that the manufacturing method is more advantageous in terms of work and the abrasive can be sufficiently prevented from dissolving under a strong base.
  • the surface smoothness of the obtained substrate can be further enhanced.
  • the negatively chargeable substrate is preferably a glass substrate. Thereby, it becomes possible to fully exhibit the effect by this invention.
  • the present invention is also a method for producing a negatively charged substrate having a high surface smoothness using the above polishing method.
  • the negatively chargeable substrate polishing method of the present invention produces a negatively chargeable substrate having excellent surface smoothness while realizing a high polishing rate only by using at least one kind of abrasive that does not contain cerium oxide as a main component. It can be given well. Therefore, the polishing method of the present invention is necessary for a conventional polishing method (a method of performing a precise polishing step using colloidal silica after a rough polishing step using a cerium oxide-based abrasive). Therefore, it can be said that it is an industrially extremely advantageous technology because it eliminates the need for switching work, cleaning work, dedicated equipment, etc., and can sufficiently cope with the recent shortage of rare earth supplies.
  • the negatively chargeable substrate polishing method of the present invention can provide a high surface smoothness negatively chargeable substrate with good productivity, the high surface smoothness negative chargeability using such a polishing method can be provided.
  • the substrate manufacturing method can be said to be an industrially extremely advantageous method.
  • FIG. 1 is an X-ray diffraction pattern of zirconium oxide which is a Zr raw material used in Production Example 1.
  • FIG. 2 is an X-ray diffraction pattern of the abrasive obtained in Production Example 1.
  • FIG. 3 is an SEM image of the abrasive obtained in Production Example 1.
  • FIG. 4 is a graph showing the relationship of the zeta potential to the pH of each abrasive slurry used in the examples or comparative examples.
  • a silicon carbide substrate is also included.
  • transparent or semi-transparent things such as soda-lime glass, an alkali free glass, borosilicate glass, quartz glass, are mentioned, for example.
  • Each of the polishing steps b to be polished is performed at least once.
  • the order of these polishing steps is not particularly limited, and the polishing step b may be performed after the polishing step a, or the polishing step a may be performed after the polishing step b.
  • each polishing step may be performed a plurality of times, or the polishing step a and the polishing step b may be performed alternately.
  • the polishing step a is performed a plurality of times, as long as the zeta potential of the abrasive slurry is positive, the zeta potential may be changed or may be changed.
  • the polishing step b is performed a plurality of times, and as long as the zeta potential of the abrasive slurry is negative, the zeta potential may be changed or may be changed.
  • “the zeta potential of the abrasive slurry” is a value obtained under the measurement conditions described in the examples described later.
  • the action due to electrostatic attraction is exhibited in the polishing step a, and the action due to electrostatic repulsion is exhibited in the polishing step b, so that these synergistic effects result in a high polishing rate and negative chargeability after polishing. It is presumed that excellent surface smoothness in the substrate will be realized.
  • the surface of the negatively chargeable substrate before polishing has a recess made of fine scratches or holes.
  • the polishing step a the substrate to be polished is negatively charged, whereas the abrasive slurry is positively charged, so that the abrasive penetrates deep into the recesses by electrostatic attraction and promotes polishing. Therefore, it is considered that the polishing rate is increased.
  • the polishing step b since the substrate to be polished and the abrasive slurry are both negatively charged, the abrasive does not penetrate deep into the recess due to electrostatic repulsion, but is applied between the polishing pad and the substrate. It is considered that a large amount of abrasive is present on the convex portion of the substrate surface due to the pressure, thereby smoothing the substrate surface. Accordingly, if the object to be polished is a negatively chargeable substrate, the same working mechanism is obtained. Therefore, the polishing method of the present invention can be applied not only to a glass substrate but also to various negatively chargeable substrates.
  • polishing method of this invention is not limited only to the method shown in this figure.
  • the abrasive slurry A obtained in Example 1 (including a composite of SrZrO 3 and ZrO 2 as an abrasive. Isoelectric point: 6.4) has a pH of 5 in the abrasive slurry A.
  • FIG. (A) the glass polishing step is performed under the condition of 0.5
  • FIG. (B) Is a conceptual diagram.
  • FIG. 6 is a graph conceptually showing the relationship between the processing time (polishing time) and the surface roughness of the object to be polished in the conventional polishing method (i) and the preferred embodiment (ii) of the polishing method of the present invention.
  • the polishing method of the present invention is not limited to the method (ii) shown in this graph.
  • the conventional polishing method (i) as in Comparative Example 1 to be described later, first, rough polishing is performed with a cerium oxide-based abrasive until reference numeral 4, and then the abrasive is switched (reference 4), and then colloidal silica.
  • the target surface roughness (symbol 6) is achieved by carrying out precision polishing.
  • the zeta potential of the abrasive slurry (preferably the pH of the abrasive slurry) is switched (
  • the target surface roughness (symbol 6) is achieved by performing precise polishing in the polishing step b).
  • the achievement time (symbol 8) is sufficiently shorter than the achievement time (symbol 5) in the conventional polishing method.
  • polishing is performed in the presence of an abrasive slurry.
  • the same abrasive slurry may be used, that is, continuously used (reused) to control only the zeta potential of the slurry, and the zeta potential may be positive or negative. It is also possible to prepare each abrasive slurry separately and switch the abrasive slurry in each polishing step. In any case, a slurry containing an oxide represented by the composition formula: ABO 3 and zirconium oxide may be used as the abrasive slurry.
  • the abrasive slurry can be continuously used (reused), and even when switching, it is not necessary to prepare abrasive slurry of greatly different types. No cleaning work or dedicated equipment is required. Moreover, since a high polishing rate and excellent surface smoothness can be realized without using cerium oxide, the polishing method of the present invention can be said to be a very advantageous method compared to conventional polishing methods.
  • the polishing step a is a step of polishing the negatively chargeable substrate using the abrasive slurry under conditions where the zeta potential of the abrasive slurry is positive.
  • this polishing process it is possible to achieve a high polishing rate almost equal to that when using a conventional cerium oxide-based abrasive, and the surface of the negatively charged substrate is higher than when using a cerium oxide-based abrasive. Smoothness can also be improved.
  • the polishing step b is a step of polishing a negatively chargeable substrate using the abrasive slurry under conditions where the zeta potential of the abrasive slurry is negative.
  • this polishing process while achieving a significantly higher polishing speed than the precision polishing process using conventional colloidal silica, it is possible to carry out precise polishing that is almost the same as the precision polishing process using colloidal silica. High surface smoothness can be realized in the conductive substrate.
  • the negatively chargeable substrate is polished under the condition that the zeta potential of the abrasive slurry is positive in the polishing step a and under the condition that the zeta potential of the abrasive slurry is negative in the polishing step b.
  • Each is more preferably 10 mV or more, further preferably 15 mV or more, and particularly preferably 20 mV or more.
  • the upper limit of the absolute value in each step is not particularly limited, but for example, it is easy to control (for example, if the zeta potential is too large in the polishing step a, there is a possibility that the abrasive remains on the glass substrate surface.
  • the zeta potential is too low in the polishing step b, the electrostatic repulsion between the negatively chargeable substrate and the abrasive slurry is too strong to sufficiently increase the polishing rate. From the viewpoint of preventing this, etc., it is preferably 100 mV or less.
  • the zeta potential of the abrasive slurry can be controlled by adjusting the pH of the abrasive slurry. If the abrasive slurry contains an oxide represented by the composition formula: ABO 3 and zirconium oxide, the zeta potential is positive when the pH of the abrasive slurry is adjusted to less than the isoelectric point of the abrasive slurry. On the other hand, when the pH of the abrasive slurry is adjusted to a range exceeding the isoelectric point of the abrasive slurry, the zeta potential becomes negative.
  • the abrasives emphasized increasing the polishing rate or increasing the surface smoothness, but the abrasives used in the present invention can easily control the abrasiveness only by pH. In this respect, a unique effect that cannot be conceived from the prior art can be exhibited.
  • the pH may be adjusted by adding a pH adjusting agent to the abrasive slurry, or the pH of the abrasive slurry may be adjusted using a pH buffer solution.
  • pH adjustment may not be performed.
  • An acid or an alkali can be used as the pH adjuster. If an acid is used, the pH of the abrasive slurry can be adjusted to the acidic side, and if an alkali is used, the pH of the abrasive slurry can be adjusted to the alkali side.
  • the acid is preferably, for example, an inorganic acid such as nitric acid, sulfuric acid, hydrochloric acid, perchloric acid or phosphoric acid; an organic acid such as oxalic acid or citric acid; and the alkali is, for example, an aqueous sodium hydroxide solution or potassium hydroxide.
  • Alkaline aqueous solutions such as aqueous solution, calcium hydroxide aqueous solution, sodium carbonate aqueous solution, ammonia water, sodium hydrogen carbonate aqueous solution, are preferable.
  • the polishing step a may be performed under the condition that the pH of the abrasive slurry is greater than the isoelectric point of the negatively chargeable substrate and less than the isoelectric point of the abrasive slurry. preferable. Thereby, the dissolution of the abrasive by the strong acid is sufficiently suppressed, and the polishing action by the abrasive is more exhibited, and the burden on the polishing machine / device can be reduced.
  • the lower limit of the pH of the abrasive slurry in the polishing step a is preferably 2 or more. More preferably, it is 3 or more, More preferably, it is 4 or more.
  • polishing process b on the conditions from which pH of an abrasive slurry is larger than the isoelectric point of this abrasive slurry, and is 13 or less. Thereby, it is sufficiently suppressed that the abrasive is dissolved by the strong base, and the polishing action by the abrasive is more exhibited. In addition, the burden on the polishing machine / device can be reduced.
  • the upper limit of the pH of the abrasive slurry in the polishing step b is more preferably 12 or less. More preferably, it is 11 or less.
  • the isoelectric point of the abrasive slurry (and abrasive) is the point where the algebraic sum of the charge on the abrasive grains (abrasive) in the abrasive slurry is zero, that is, the abrasive grains.
  • the point at which the positive charge and the negative charge are equal is said, and can be represented by the pH of the abrasive slurry at that point.
  • the isoelectric point of an abrasive comprising a composite of CaZrO 3 and ZrO 2 (Ca content: 27% by weight in terms of CaO) is 6.1
  • the composite of CaTiO 3 and ZrO 2 The isoelectric point of the abrasive comprising the body (Ca content: 30% by weight in terms of CaO) is 5.9
  • the composite of SrTiO 3 and ZrO 2 (Sr content: 40% by weight in terms of SrO)
  • the isoelectric point of the resulting abrasive is 5.7.
  • the abrasive slurry has a composition formula: ABO 3 (A represents at least one element selected from the group consisting of Sr and Ca. B represents at least one type selected from the group consisting of Ti, Zr and Hf. And an oxide represented by (2) and zirconium oxide.
  • ABO 3 represents at least one element selected from the group consisting of Sr and Ca.
  • B represents at least one type selected from the group consisting of Ti, Zr and Hf.
  • an oxide represented by (2) and zirconium oxide an oxide represented by (2) and zirconium oxide.
  • the oxide represented by the composition formula: ABO 3 is also referred to as “ABO 3 oxide”
  • the oxide composed of ABO 3 oxide and zirconium oxide is also referred to as “abrasive”.
  • the abrasive content (total amount of ABO 3 oxide and zirconium oxide) in the abrasive slurry is preferably, for example, 0.001 to 90% by weight in 100% by weight of the abrasive slurry. More preferably, it is 0.01 to 30% by weight.
  • the abrasive slurry further contains a dispersion medium.
  • a dispersion medium For example, water, an organic solvent, or these mixtures etc. are mentioned, 1 type (s) or 2 or more types can be used.
  • the organic solvent include alcohol, acetone, dimethyl sulfoxide, dimethylformamide, tetrahydrofuran, dioxane and the like.
  • the alcohol include monovalent water-soluble alcohols such as methanol, ethanol and propanol; bivalent or more such as ethylene glycol and glycerin. Of water-soluble alcohols.
  • the dispersion medium is preferably water, and more preferably ion-exchanged water.
  • the above-mentioned abrasive slurry may also contain one or more additives as long as it does not interfere with the effects of the present invention.
  • the additive is not particularly limited, and examples thereof include pH adjusters (acids, alkalis, etc.), chelating agents, antifoaming agents, dispersants, viscosity modifiers, aggregation inhibitors, lubricants, reducing agents, rust inhibitors, A well-known polishing material etc. are mentioned.
  • the content of additives other than the pH adjuster is preferably as small as possible.
  • the content of additives other than the pH adjuster is preferably 5% by weight or less with respect to 100% by weight of the total amount of the abrasive slurry.
  • the abrasive, the dispersion medium and the pH adjuster are preferably 90% by weight or more, more preferably 95% by weight or more, and further preferably 99% by weight or more.
  • the abrasive slurry is not particularly limited as long as it contains zirconium oxide as ABO 3 oxide preferably contains a zirconium oxide and ABO 3 oxide as a composite thereof. That abrasive material composed of ABO 3 oxide and zirconium oxide is preferably a composite of the zirconium oxide and the ABO 3 oxide.
  • the abrasive slurry in the present invention has a composition formula: ABO 3 (A represents at least one element selected from the group consisting of Sr and Ca. B represents a group consisting of Ti, Zr and Hf. It is preferable to include a composite of an oxide represented by (2) representing at least one selected element and zirconium oxide as an abrasive.
  • the complex with the zirconium oxide and the ABO 3 oxide refers to secondary particles each of the primary particles of the zirconium oxide and the ABO 3 oxide is formed by partially sintered. For example, if elemental mapping is performed on the composite by energy dispersive X-ray spectroscopy (EDS), primary particles from which elements contained in A and B are detected and primary particles from which only Zr is detected are obtained. A state of forming secondary particles is observed.
  • EDS energy dispersive X-ray spectroscopy
  • the abrasive contains an ABO 3 oxide crystal phase and a zirconium oxide (ZrO 2 ) crystal phase. Since the crystal phase of ABO 3 oxide contained in the abrasive material is responsible for the chemical polishing action and the crystal phase of ZrO 2 is responsible for the mechanical polishing action, a better polishing rate can be exhibited. Furthermore, when the ABO 3 oxide and ZrO 2 form a composite, the chemical polishing action by the ABO 3 oxide and the mechanical polishing action by the crystal phase of ZrO 2 are more effectively exhibited.
  • the crystal phase of the ABO 3 oxide is particularly preferably a crystal phase of SrZrO 3 and / or CaZrO 3 , and most preferably a crystal phase of SrZrO 3 .
  • the half-value width of the peak derived from the (040) plane of orthorhombic SrZrO 3 and / or the peak derived from the (121) plane of CaZrO 3 in X-ray diffraction using CuK ⁇ rays as a radiation source is 0. It is preferably 1 to 3.0 °.
  • the angle is more preferably 0.1 to 1.0 °, further preferably 0.1 to 0.7 °, and particularly preferably 0.1 to 0.4 °.
  • the abrasive is preferably ratio D 10 of D 90 indicative of sharpness of volume-based particle size distribution (D 90 / D 10) is 1.5 to 50.
  • D 90 / D 10 is in the range of 1.5 to 50, the variation in the particle diameter becomes appropriate, and the polishing material and the substrate to be polished can be sufficiently brought into contact with each other, thereby realizing a better polishing rate. be able to. More preferably, it is 1.5 to 45, and still more preferably 1.5 to 40.
  • D 90 / D 10 is large, it means that the particle size distribution is broad, smaller value means that the particle size distribution is sharp.
  • D 10 and D 90 are values obtained by measuring the particle size distribution, respectively. It means 10% cumulative particle diameter on a volume basis and D 10, and D 90 refers to the 90% cumulative particle diameter on a volume basis.
  • the abrasive preferably has a specific surface area of 1.0 to 50 m 2 / g.
  • the specific surface area is 1.0 m 2 / g or more, it is possible to sufficiently contact the substrate to be polished, and thus it is possible to polish more suitably.
  • the mechanical polishing action is further enhanced. More preferably, it is 1.0 to 45 m 2 / g, and still more preferably 1.0 to 40 m 2 / g.
  • the specific surface area (also referred to as SSA) means the BET specific surface area.
  • the BET specific surface area refers to a specific surface area obtained by the BET method, which is one method for measuring the specific surface area.
  • the specific surface area refers to the surface area per unit mass of a certain object.
  • the BET method is a gas adsorption method in which gas particles such as nitrogen are adsorbed on solid particles and the specific surface area is measured from the amount adsorbed.
  • the specific surface area is determined by obtaining the monomolecular adsorption amount VM by the BET equation from the relationship between the pressure P and the adsorption amount V.
  • the abrasive preferably contains 10 to 43% by weight of the element A in the ABO 3 oxide in terms of oxide.
  • the polishing efficiency can be further increased. More preferably, it is 11 to 43% by weight, and still more preferably 12 to 43% by weight.
  • the ABO 3 oxide has a composition formula: ABO 3 (A represents at least one element selected from the group consisting of Sr and Ca. B represents at least one selected from the group consisting of Ti, Zr and Hf. Represents a seed element).
  • A represents at least one element selected from the group consisting of strontium (Sr) and calcium (Ca), among which Sr is preferable.
  • B represents at least one element selected from the group consisting of titanium (Ti), zirconium (Zr), and hafnium (Hf). Among them, Ti and / or Zr are preferable, and Zr is more preferable. is there.
  • the ABO 3 oxide is, for example, at least one selected from the group consisting of strontium carbonate, strontium hydroxide, calcium carbonate and calcium hydroxide, and titanium oxide, titanium hydroxide, zirconium oxide, zirconium hydroxide, zirconium carbonate. And those obtained by reacting at least one selected from the group consisting of hafnium oxide. Since this reaction proceeds easily, ABO 3 oxide can be easily obtained.
  • the production method, shape, crystal type, particle size, etc. of titanium oxide (TiO 2 ) are not particularly limited.
  • a chlorine method may be used as a method for producing titanium oxide, or a sulfuric acid method may be used.
  • the crystal type may be a rutile type, an anatase type, a brookite type, or a mixture thereof.
  • the production method, shape, crystal type, particle diameter, etc. of hafnium oxide (HfO 2 ) are not particularly limited.
  • Zirconium oxide (ZrO 2 ) is not particularly limited, but is preferably in the same form as zirconium oxide described later.
  • the ABO 3 oxide is particularly preferably strontium zirconate (SrZrO 3 ) and / or calcium zirconate (CaZrO 3 ), and most preferably strontium zirconate (SrZrO 3 ).
  • strontium zirconate is obtained by, for example, reacting at least one selected from the group consisting of strontium carbonate and strontium hydroxide with at least one selected from the group consisting of zirconium oxide, zirconium hydroxide and zirconium carbonate. It is preferred to obtain. Since this reaction proceeds easily, strontium zirconate is likely to be generated.
  • the calcium zirconate is obtained, for example, by a reaction between at least one selected from the group consisting of calcium carbonate and calcium hydroxide and at least one selected from the group consisting of zirconium oxide, zirconium hydroxide and zirconium carbonate. It is preferred to obtain. Since this reaction proceeds easily, calcium zirconate is likely to be generated.
  • zirconium oxide (ZrO 2 ) will be described.
  • the crystal form of zirconium oxide is preferably a monoclinic, tetragonal or cubic crystal structure, or a mixed crystal of these crystal structures.
  • the zirconium oxide is not particularly limited.
  • the peak half-width ”) is preferably from 0.1 to 3.0 °.
  • the half width is 3.0 ° or less, the crystallinity of ZrO 2 contained in the abrasive slurry is increased, and a mechanical polishing action derived from ZrO 2 can be sufficiently obtained.
  • the half width is 0.1 ° or more, an abrasive slurry that is superior in polishing rate can be obtained.
  • the angle is more preferably 0.1 to 1.0 °, further preferably 0.1 to 0.7 °, and particularly preferably 0.1 to 0.4 °.
  • CuK ⁇ rays are used for all X-ray diffraction sources.
  • the abrasive slurry used in the present invention includes an abrasive comprising strontium zirconate (SrZrO 3 ) and / or calcium zirconate (CaZrO 3 ) and zirconium oxide (ZrO 2 ), and more Preferably, it contains a complex of strontium zirconate and / or calcium zirconate and zirconium oxide, and most preferably contains a complex of strontium zirconate and zirconium oxide.
  • an abrasive comprising strontium zirconate (SrZrO 3 ) and / or calcium zirconate (CaZrO 3 ) and zirconium oxide (ZrO 2 )
  • it contains a complex of strontium zirconate and / or calcium zirconate and zirconium oxide, and most preferably contains a complex of strontium zirconate and zirconium oxide.
  • This abrasive includes, for example, a mixing step of mixing a strontium compound and a zirconium compound and a baking step of baking the mixture obtained by the mixing step Is preferably obtained. Since this manufacturing method is performed by a solid-phase reaction method, the manufacturing process is simpler than that of the spray pyrolysis method, and it is possible to manufacture at a low cost without introducing special equipment.
  • a complex of calcium zirconate and zirconium oxide is also preferably obtained by a production method almost the same as that (however, a calcium compound such as calcium carbonate or calcium hydroxide is used in place of the strontium compound).
  • a calcium compound such as calcium carbonate or calcium hydroxide is used in place of the strontium compound.
  • the mixing step the strontium compound and the zirconium compound are mixed.
  • the mixing method is not particularly limited and may be wet mixing or dry mixing, but wet mixing is preferable from the viewpoint of mixing properties.
  • the dispersion medium used for wet mixing is not particularly limited, and water or lower alcohol can be used, but water is preferable and ion-exchanged water is more preferable from the viewpoint of production cost.
  • a ball mill, a paint conditioner, or a sand grinder may be used.
  • the strontium compound is not particularly limited as long as it is a compound containing a strontium atom, but among them, at least one selected from the group consisting of strontium carbonate and strontium hydroxide is preferable.
  • Strontium carbonate and strontium hydroxide easily react with the zirconium compound to easily produce strontium zirconate (SrZrO 3 ).
  • the zirconium compound is not particularly limited as long as it is a compound containing a zirconium atom, but among these, at least one selected from the group consisting of zirconium oxide, zirconium carbonate and zirconium hydroxide is preferable. These have high reactivity with the strontium compound, and can provide an abrasive having better polishing characteristics. Note that when a zirconium compound other than zirconium oxide (for example, zirconium carbonate and / or zirconium hydroxide) is used, the firing and pulverizing steps during the synthesis of zirconium oxide can be omitted. The said zirconium compound can also be used for a mixing process with the cake form obtained by the synthesis
  • the specific surface area of the zirconium oxide is preferably 2.0 to 200 m 2 / g. Thereby, it is possible to obtain an abrasive slurry superior in polishing rate. More preferably, it is 2.0 to 180 m 2 / g, and still more preferably 2.0 to 160 m 2 / g.
  • the specific surface area of the zirconium compound other than the zirconium oxide is preferably 0.1 to 250 m 2 / g. Thereby, it is possible to obtain an abrasive slurry superior in polishing rate. More preferably, it is 0.3 to 240 m 2 / g, and still more preferably 0.5 to 230 m 2 / g.
  • the SO 3 equivalent amount of the sulfur compound contained in the zirconium compound is 2.0 parts by weight or less with respect to 100 parts by weight of the zirconium compound equivalent to ZrO 2. Preferably there is. Thereby, an abrasive with an even better polishing rate can be obtained.
  • the sulfur compound content (SO 3 equivalent) is more preferably 1.5 parts by weight or less, still more preferably 1.1 parts by weight or less, and particularly preferably 0.5 parts by weight or less.
  • the SO 3 equivalent amount of the sulfur compound contained in the zirconium compound is measured on the measurement sample stage using an EZ scan which is a contained element scanning function of an X-ray fluorescence analyzer (manufactured by Rigaku Corporation: model number ZSX Primus II). It can be obtained by setting the pressed sample and selecting the following conditions (measurement range: FU, measurement diameter: 30 mm, sample form: oxide, measurement time: long, atmosphere: vacuum).
  • a drying step may be performed as necessary.
  • the dispersion medium is removed from the slurry obtained in the mixing step and dried.
  • the method for drying the slurry is not particularly limited as long as the solvent used at the time of mixing can be removed, and examples thereof include drying under reduced pressure and drying by heating. Further, the slurry may be dried as it is, or may be dried after being filtered. Note that the dry product of the mixture may be dry-pulverized.
  • the raw material mixture obtained in the mixing step (may be a dried product obtained through a further drying step) is fired. Thereby, a composite particularly suitable as an abrasive can be preferably obtained.
  • the raw material mixture may be fired as it is, or may be fired after being molded into a predetermined shape (for example, a pellet shape).
  • the firing atmosphere is not particularly limited. The firing step may be performed only once or twice or more.
  • the firing temperature in the firing step may be a temperature sufficient for the reaction between the strontium compound and the zirconium compound.
  • the temperature is preferably 700 to 1500 ° C.
  • the reaction proceeds more sufficiently, and when the firing temperature is 1500 ° C. or less, the polishing rate of the resulting abrasive is further increased.
  • the lower limit value is more preferably 730 ° C. or more, still more preferably 750 ° C. or more
  • the upper limit value is more preferably 1300 ° C. or less, still more preferably 1270 ° C. or less, and particularly preferably 1250 ° C. or less.
  • the firing temperature in the firing step means the highest temperature reached in the firing step.
  • the holding time at the firing temperature may be a time sufficient for the reaction between the strontium compound and the zirconium compound. For example, it is preferably 5 minutes to 24 hours. When the holding time is within this range, the reaction proceeds more sufficiently, and when the holding time is 24 hours or less, the generated fired product (strontium zirconate) is sufficiently suppressed from being vigorously sintered.
  • the polishing rate can be further increased. More preferably, it is 7 minutes to 22 hours, and further preferably 10 minutes to 20 hours.
  • the rate of temperature rise during the temperature rise until reaching the maximum temperature (firing temperature) is 0.2 to 15 ° C./min. If the rate of temperature increase is 0.2 ° C./min or more, the time required for temperature increase does not become too long, so that waste of energy and time can be sufficiently suppressed, and if it is 15 ° C./min or less.
  • the temperature of the furnace contents can sufficiently follow the set temperature, and firing unevenness is more sufficiently suppressed. More preferably, it is 0.5 to 12 ° C./min, and further preferably 1.0 to 10 ° C./min.
  • a pulverization step may be performed as necessary.
  • the fired product obtained in the firing step is pulverized.
  • the pulverization method and pulverization conditions are not particularly limited, and for example, a ball mill, a reiki machine, a hammer mill, a jet mill, or the like may be used.
  • the method for producing a high surface smoothness negatively charged substrate of the present invention uses the above-described method for polishing a negatively charged substrate of the present invention. That is, the manufacturing method includes a polishing step a in which a negatively chargeable substrate is polished under the condition that the zeta potential of the abrasive slurry is positive in the presence of the abrasive slurry, and the abrasive slurry in the presence of the abrasive slurry.
  • Firing step 30 g of the dried product of the mixture obtained in the above (3) drying step is placed in an alumina crucible having an outer diameter of 55 mm and a capacity of 60 mL, and an electric muffle furnace (ADVANTEC, KM-420). Was fired to obtain a fired product.
  • ADVANTEC electric muffle furnace
  • the temperature was raised from room temperature to 950 ° C. over 285 minutes, held at 950 ° C. for 180 minutes, and then the heater was turned off and cooled to room temperature. The firing was performed in the air.
  • FIG. 1 An X-ray diffraction pattern of the Zr raw material used in Production Example 1 is shown in FIG. 1, and an X-ray diffraction pattern of the obtained abrasive is shown in FIG.
  • the X-ray diffraction pattern of the abrasive shown in FIG. 2 contained both ZrO 2 and SrZrO 3 peaks in a database (JCPDS card) with known peak positions. Therefore, it was found that the abrasive obtained in Production Example 1 had a crystal phase of SrZrO 3 and a crystal phase of ZrO 2 .
  • the half-width of the maximum peak at 31.00 ° was 0.38 °.
  • a peak derived from the (040) plane of orthorhombic SrZrO 3 was confirmed in the X-ray diffraction pattern of the abrasive obtained in Production Example 1, and the half width was 0.33 °. It was.
  • Production Example 2 (Abrasive B) Production Example 1 except that 31.3 g of the zirconium hydroxide cake obtained in “(1) Zr raw material preparation step” was used as the Zr raw material in “(2) mixing step” of Production Example 1 in terms of ZrO 2.
  • an abrasive B made of a composite of SrZrO 3 and ZrO 2 was obtained. About this abrasive
  • Production Example 3 As a Ca raw material in “(2) mixing step” of Production Example 1, 22.5 g of calcium carbonate (manufactured by Sakai Chemical Industry Co., Ltd .: CWS-20) is used, and “(1) Zr raw material of Production Example 1 is used as a Zr raw material. Except that 42.4 g of zirconium oxide obtained in the “preparation step” was used, an abrasive E composed of a composite of CaZrO 3 and ZrO 2 was obtained in the same manner as in Production Example 1. About this abrasive material E, the half value width, the specific surface area, the elemental analysis, and the sharpness of the particle size distribution were measured or evaluated in the same manner as in Production Example 1. The results are shown in Table 1.
  • abrasive Slurry A An abrasive slurry A was produced using the abrasive A produced in Production Example 1. Specifically, 20.0 g of abrasive A was dispersed in 380.0 g of ion-exchanged water and stirred at 25 ° C. for 10 minutes. In this way, an abrasive slurry A was obtained.
  • the zeta potential was measured under the following conditions. The relationship of the zeta potential with respect to pH of this abrasive slurry is shown in FIG. Further, the isoelectric point of the abrasive slurry A was 6.4.
  • the isoelectric point is the point where the algebraic sum of the electric charge on the abrasive grains (abrasive) in the abrasive slurry is zero, that is, the point where the positive and negative charges on the abrasive grains are equal. It can be represented by the pH of the abrasive slurry at that point.
  • Measuring instrument Otsuka Electronics Co., Ltd., zeta potential measurement system, model number ELSZ-1 pH titrator: manufactured by Otsuka Electronics Co., Ltd., model number ELS-PT 6 g of the abrasive slurry was diluted 5 times with ion-exchanged water, and dispersed with an ultrasonic cleaner for 1 minute while stirring with a glass rod.
  • Acid side pH adjustment solution hydrochloric acid aqueous solution, 0.1 mol / L
  • Alkaline side pH adjustment solution sodium hydroxide aqueous solution, 1 mol / L
  • Production Example 5 An abrasive slurry B was produced in the same manner as in Production Example 4 (Abrasive Slurry A) except that the abrasive B produced in Production Example 2 was used.
  • the zeta potential was measured under the above measurement conditions. The relationship of the zeta potential with respect to pH of this abrasive slurry is shown in FIG.
  • the isoelectric point of the abrasive slurry B was 6.2.
  • Production Example 8 (Abrasive Slurry E) An abrasive slurry E was produced in the same manner as in Production Example 4 (Abrasive Slurry A) except that the abrasive E produced in Production Example 3 was used.
  • the zeta potential was measured under the above measurement conditions. The relationship of the zeta potential with respect to pH of this abrasive slurry is shown in FIG.
  • the isoelectric point of the abrasive slurry E was 6.1.
  • Example 1 (1) First Polishing Step After adjusting the pH of the slurry so that the zeta potential of the abrasive slurry A obtained in Production Example 4 has the value shown in Table 2, the following polishing conditions are satisfied in the presence of this slurry.
  • the glass substrate was polished.
  • Table 2 shows the pH value of the abrasive slurry A in this step.
  • the polishing rate in the first polishing step and the surface roughness of the glass substrate after the first polishing step were evaluated according to the following methods. The results are shown in Table 2.
  • Second polishing step The abrasive slurry A used in the first polishing step is continuously used as it is, and the pH of the slurry is adjusted so that the zeta potential becomes the value shown in Table 2, and then the presence of this slurry.
  • the glass substrate was grind
  • Table 2 shows the pH value of the abrasive slurry A in this step.
  • Glass plate used Soda lime glass (manufactured by Matsunami Glass Industry Co., Ltd., size 36 ⁇ 36 ⁇ 1.3 mm, specific gravity 2.5 g / cm 3 )
  • Polishing machine Desktop polishing machine (manufactured by MT Corporation, MAT BC-15C, polishing plate diameter 300 mm ⁇ )
  • Polishing pad Polyurethane foam pad (Nitta Haas, MHN-15A, no ceria impregnation) Polishing pressure: 101 g / cm 2 Plate rotation speed: 70rpm Abrasive slurry supply rate: 100 mL / min Polishing time: 60 min
  • ⁇ Measurement of polishing rate> The weight of the glass substrate before and after each polishing step was measured with an electronic balance. From the weight reduction amount, the area of the glass substrate, and the specific gravity of the glass substrate, the thickness reduction amount of the glass substrate was calculated, and the polishing rate ( ⁇ m / min) was calculated. Three glass substrates were polished at the same time, and after polishing for 60 minutes, the glass substrate and the abrasive slurry were exchanged. This operation was performed three times, and a value obtained by averaging the polishing rate of a total of 9 sheets was taken as the value of the polishing rate in each example and comparative example.
  • Example 2 Except that the abrasive slurry A was taken out after the first polishing step and switched to a new abrasive slurry A (however, the pH of the slurry was adjusted to the value shown in Table 2) and the second polishing step was performed. In the same manner as in Example 1, the first polishing step and the second polishing step were performed. Table 2 shows the pH of the abrasive slurry, the zeta potential, the polishing rate, and the surface roughness of the glass substrate in each step.
  • Example 3 The first polishing step and the second polishing step were performed in the same manner as in Example 2 except that the abrasive slurry B was used instead of the abrasive slurry A.
  • Table 2 shows the pH of the abrasive slurry, the zeta potential, the polishing rate, and the surface roughness of the glass substrate in each step.
  • Example 4 The first polishing step and the second polishing step were performed in the same manner as in Example 2 except that the abrasive slurry E was used instead of the abrasive slurry A.
  • Table 2 shows the pH of the abrasive slurry, the zeta potential, the polishing rate, and the surface roughness of the glass substrate in each step.
  • Comparative Example 1 (1) First polishing step After adjusting the pH of the slurry so that the zeta potential of the abrasive slurry C obtained in Production Example 6 becomes the value shown in Table 2, the same polishing as in Example 1 in the presence of this slurry The glass substrate was polished under the conditions. The pH value of the abrasive slurry C in this step is shown in Table 2. Further, the polishing rate in the first polishing step and the surface roughness of the glass substrate after the first polishing step were evaluated according to the methods described above. The results are shown in Table 2. (2) Second polishing step The abrasive slurry C used in the first polishing step was taken out from the polishing machine, and the polishing machine was cleaned.
  • Example 1 since the same type of abrasive slurry is used in the first polishing step and the second polishing step, the cleaning operation of the polishing machine is unnecessary, which is very advantageous in terms of work and equipment. It was.
  • the abrasive slurry A used in the first polishing step was continuously used as it was, whereas in the second polishing step of Example 2, the abrasive used in the first polishing step.
  • Example 1 and Example 2 are different in that polishing is performed by switching to a new abrasive slurry A. However, this difference has been found to have little effect on the polishing rate and the surface smoothness of the resulting substrate.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un procédé de polissage qui produit un substrat chargé négativement présentant une excellente caractéristique de lissé de surface avec une bonne productivité tout en permettant d'obtenir des vitesses de polissage élevées. L'invention concerne également un procédé permettant d'obtenir un substrat chargé négativement présentant une caractéristique de lissé de surface élevée. Dans ce procédé de fabrication d'un substrat chargé négativement à l'aide d'une suspension de polissage, la suspension de polissage contient un oxyde représenté par l'expression de composition ABO3 (A représente au moins un élément choisi dans le groupe constitué par Sr et Ca ; B représente au moins un élément choisi dans le groupe constitué par Ti, Zr, et Hf), et de l'oxyde de zirconium, et le procédé de polissage consiste à exécuter, au moins une fois chacune, une étape de polissage a destinée à polir un substrat chargé négativement dans des conditions dans lesquelles le potentiel zêta de la suspension de polissage devient positif, et une étape de polissage b destinée à polir le substrat chargé négativement dans des conditions dans lesquelles le potentiel zêta de la suspension de polissage devient négatif.
PCT/JP2016/053699 2015-02-26 2016-02-08 Procédé de polissage de substrat chargé négativement et procédé de fabrication de substrat chargé négativement présentant une caractéristique de lissé de surface élevée WO2016136447A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2017502041A JP6665852B2 (ja) 2015-02-26 2016-02-08 負帯電性基板の研磨方法、及び、高表面平滑性の負帯電性基板の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-036634 2015-02-26
JP2015036634 2015-02-26

Publications (1)

Publication Number Publication Date
WO2016136447A1 true WO2016136447A1 (fr) 2016-09-01

Family

ID=56789525

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/053699 WO2016136447A1 (fr) 2015-02-26 2016-02-08 Procédé de polissage de substrat chargé négativement et procédé de fabrication de substrat chargé négativement présentant une caractéristique de lissé de surface élevée

Country Status (3)

Country Link
JP (1) JP6665852B2 (fr)
TW (1) TWI705947B (fr)
WO (1) WO2016136447A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020157652A (ja) * 2019-03-27 2020-10-01 セイコーエプソン株式会社 液体吐出ヘッドおよびプリンター

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102278257B1 (ko) * 2017-03-27 2021-07-15 쇼와덴코머티리얼즈가부시끼가이샤 슬러리 및 연마 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013082050A (ja) * 2011-10-12 2013-05-09 Japan Fine Ceramics Center 研磨材料、研磨用組成物及び研磨方法
JP2013188811A (ja) * 2012-03-13 2013-09-26 Ujiden Chemical Industry Co Ltd 砥粒及びその製造方法
JP2014083597A (ja) * 2012-10-19 2014-05-12 Asahi Glass Co Ltd ガラス基板の研磨方法
JP2014083598A (ja) * 2012-10-19 2014-05-12 Asahi Glass Co Ltd ガラス基板の研磨方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4251516B2 (ja) * 2000-05-12 2009-04-08 花王株式会社 研磨液組成物
CA2532114A1 (fr) * 2003-07-11 2005-01-27 W.R. Grace & Co.-Conn. Particules abrasives pour polissage mecanico-chimique
JP2014024960A (ja) * 2012-07-26 2014-02-06 Fujimi Inc 研磨用組成物、酸化物材料の研磨方法及び酸化物材料基板の製造方法
JP6035587B2 (ja) * 2012-12-28 2016-11-30 山口精研工業株式会社 ガラス用研磨剤組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013082050A (ja) * 2011-10-12 2013-05-09 Japan Fine Ceramics Center 研磨材料、研磨用組成物及び研磨方法
JP2013188811A (ja) * 2012-03-13 2013-09-26 Ujiden Chemical Industry Co Ltd 砥粒及びその製造方法
JP2014083597A (ja) * 2012-10-19 2014-05-12 Asahi Glass Co Ltd ガラス基板の研磨方法
JP2014083598A (ja) * 2012-10-19 2014-05-12 Asahi Glass Co Ltd ガラス基板の研磨方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020157652A (ja) * 2019-03-27 2020-10-01 セイコーエプソン株式会社 液体吐出ヘッドおよびプリンター

Also Published As

Publication number Publication date
TWI705947B (zh) 2020-10-01
TW201641464A (zh) 2016-12-01
JPWO2016136447A1 (ja) 2017-12-07
JP6665852B2 (ja) 2020-03-13

Similar Documents

Publication Publication Date Title
JP7071495B2 (ja) 材料除去操作を行うための組成物及びその形成方法
KR102090494B1 (ko) 세륨계 연마재 및 그 제조 방법
EP2669046A1 (fr) Matériau de polissage et composition de polissage
JP5278631B1 (ja) ガラス研磨用複合粒子
JP5979340B1 (ja) 研磨用複合粒子、研磨用複合粒子の製造方法及び研磨用スラリー
JP2012011526A (ja) 研磨材およびその製造方法
JP6460090B2 (ja) 複合金属酸化物研磨材料の製造方法及び複合金属酸化物研磨材料
KR100640583B1 (ko) 산화세륨 연마 입자 및 그 제조 방법과 ｃｍｐ용 슬러리조성물 및 그 제조 방법과 이들을 이용한 기판 연마 방법
JP2017001927A (ja) 研磨用複合粒子、研磨用複合粒子の製造方法及び研磨用スラリー
TW201313849A (zh) 研磨材及研磨用組成物
WO2016136447A1 (fr) Procédé de polissage de substrat chargé négativement et procédé de fabrication de substrat chargé négativement présentant une caractéristique de lissé de surface élevée
JP2005529053A (ja) 高精度研磨用金属酸化物粉体及びその製造方法
JP5883609B2 (ja) 研磨材料、研磨用組成物及び研磨方法
JP6458554B2 (ja) 複合金属酸化物研磨材料の製造方法及び複合金属酸化物研磨材料
JP6839767B2 (ja) セリウム系研磨材用原料の製造方法、及びセリウム系研磨材の製造方法
WO2007099799A1 (fr) Materiau abrasif a base de cerium
KR101701005B1 (ko) 산화세륨계 연마재와 이를 포함하는 슬러리 및 그 제조 방법
JP6533995B2 (ja) 複合金属酸化物研磨材料の製造方法及び複合金属酸化物研磨材料
KR20070065509A (ko) 고정도 연마용 산화세륨의 제조방법
JP5627108B2 (ja) 研磨剤
JP2015140402A (ja) 遊離砥粒、遊離砥粒研磨用研磨剤及びその製造方法
JP5993323B2 (ja) 研磨材料
JP2014084420A (ja) 遊離砥粒研磨用酸化マンガン研磨剤及びその製造方法
JP2012236273A (ja) 遊離砥粒研磨用研磨剤及びその製造方法
JP2014101488A (ja) 異種金属元素を添加したマンガン酸化物遊離砥粒研磨用研磨剤及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16755194

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017502041

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 16755194

Country of ref document: EP

Kind code of ref document: A1