TWI705947B - 帶負電性基板之硏磨方法、及高表面平滑性之帶負電性基板之製造方法 - Google Patents

帶負電性基板之硏磨方法、及高表面平滑性之帶負電性基板之製造方法 Download PDF

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Publication number
TWI705947B
TWI705947B TW105104534A TW105104534A TWI705947B TW I705947 B TWI705947 B TW I705947B TW 105104534 A TW105104534 A TW 105104534A TW 105104534 A TW105104534 A TW 105104534A TW I705947 B TWI705947 B TW I705947B
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TW
Taiwan
Prior art keywords
polishing
negatively charged
slurry
abrasive
charged substrate
Prior art date
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TW105104534A
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English (en)
Chinese (zh)
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TW201641464A (zh
Inventor
小泉寿夫
川崎勇児
高橋直人
橋本大樹
加藤良一
山本務
見上勝
和田瑞穗
Original Assignee
日商堺化學工業股份有限公司
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Publication of TW201641464A publication Critical patent/TW201641464A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW105104534A 2015-02-26 2016-02-17 帶負電性基板之硏磨方法、及高表面平滑性之帶負電性基板之製造方法 TWI705947B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2015-036634 2015-02-26
JP2015036634 2015-02-26

Publications (2)

Publication Number Publication Date
TW201641464A TW201641464A (zh) 2016-12-01
TWI705947B true TWI705947B (zh) 2020-10-01

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TW105104534A TWI705947B (zh) 2015-02-26 2016-02-17 帶負電性基板之硏磨方法、及高表面平滑性之帶負電性基板之製造方法

Country Status (3)

Country Link
JP (1) JP6665852B2 (fr)
TW (1) TWI705947B (fr)
WO (1) WO2016136447A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018179064A1 (fr) * 2017-03-27 2018-10-04 日立化成株式会社 Bouillie, et procédé de polissage
JP7275743B2 (ja) * 2019-03-27 2023-05-18 セイコーエプソン株式会社 液体吐出ヘッドおよびプリンター

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013082050A (ja) * 2011-10-12 2013-05-09 Japan Fine Ceramics Center 研磨材料、研磨用組成物及び研磨方法
JP2014083598A (ja) * 2012-10-19 2014-05-12 Asahi Glass Co Ltd ガラス基板の研磨方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4251516B2 (ja) * 2000-05-12 2009-04-08 花王株式会社 研磨液組成物
WO2005007770A1 (fr) * 2003-07-11 2005-01-27 W.R. Grace & Co.-Conn. Particules abrasives pour polissage mecanico-chimique
JP5579765B2 (ja) * 2012-03-13 2014-08-27 宇治電化学工業株式会社 砥粒及びその製造方法
JP2014024960A (ja) * 2012-07-26 2014-02-06 Fujimi Inc 研磨用組成物、酸化物材料の研磨方法及び酸化物材料基板の製造方法
JP5942773B2 (ja) * 2012-10-19 2016-06-29 旭硝子株式会社 ガラス基板の研磨方法
JP6035587B2 (ja) * 2012-12-28 2016-11-30 山口精研工業株式会社 ガラス用研磨剤組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013082050A (ja) * 2011-10-12 2013-05-09 Japan Fine Ceramics Center 研磨材料、研磨用組成物及び研磨方法
JP2014083598A (ja) * 2012-10-19 2014-05-12 Asahi Glass Co Ltd ガラス基板の研磨方法

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Publication number Publication date
JPWO2016136447A1 (ja) 2017-12-07
WO2016136447A1 (fr) 2016-09-01
JP6665852B2 (ja) 2020-03-13
TW201641464A (zh) 2016-12-01

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