WO2016125430A1 - Cellule solaire à jonction arrière - Google Patents

Cellule solaire à jonction arrière Download PDF

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WO2016125430A1
WO2016125430A1 PCT/JP2016/000138 JP2016000138W WO2016125430A1 WO 2016125430 A1 WO2016125430 A1 WO 2016125430A1 JP 2016000138 W JP2016000138 W JP 2016000138W WO 2016125430 A1 WO2016125430 A1 WO 2016125430A1
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substrate
crystal silicon
single crystal
silicon substrate
type single
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PCT/JP2016/000138
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English (en)
Japanese (ja)
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力 森
渡部　武紀
大塚　寛之
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信越化学工業株式会社
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a back junction solar cell.
  • the back junction solar cell has a structure without an electrode on the light receiving surface (see, for example, Patent Document 1), incident light loss can be reduced and conversion efficiency is expected to be improved.
  • the thickness of the substrate is generally reduced in back junction solar cells. The conversion efficiency is improved.
  • the thickness of the substrate is reduced in order to improve the conversion efficiency, the substrate is liable to break, and thus there is a problem that the yield at the time of manufacture is lowered.
  • the present invention has been made in view of the above problems, and provides a back junction solar cell that can improve the yield during manufacturing and improve the conversion efficiency of the energy of light incident from the light receiving surface.
  • the purpose is to do.
  • the present invention provides a back junction solar cell having an n-type region in at least part of a non-light-receiving surface of a p-type single crystal silicon substrate, wherein the p-type single crystal silicon substrate is gallium.
  • a back junction solar cell which is doped and has a thickness of the p-type single crystal silicon substrate of 250 ⁇ m or more and 1000 ⁇ m or less.
  • the bulk lifetime of the substrate can be increased, thereby making it less susceptible to recombination within the bulk region. Therefore, even if the substrate is thickened to make it difficult to break the substrate, it is possible to suppress a decrease in conversion efficiency.
  • the thickness of the p-type single crystal silicon substrate in the above range, cracks of the substrate are less likely to occur, and conversion efficiency can be improved while suppressing a decrease in yield during manufacturing.
  • a passivation film made of a CVD silicon oxide film is provided on the light-receiving surface of the p-type single crystal silicon substrate, and no passivation film is provided on the non-light-receiving surface of the p-type single crystal silicon substrate. It is preferable in terms of cost.
  • the passivation film is not provided on the non-light-receiving surface of the p-type single crystal silicon substrate, the manufacturing cost can be reduced. Further, since a thermal oxide film is not used for the passivation film on the light receiving surface, it is possible to prevent the gallium concentration in the vicinity of the light receiving surface from being reduced, and to prevent a decrease in conversion efficiency.
  • the oxygen concentration of the p-type single crystal silicon substrate is 1 ⁇ 10 16 atoms / cm 3 or less
  • the gallium concentration of the p-type single crystal silicon substrate is 1 ⁇ 10 16 atoms / cm 3 or less. preferable.
  • the oxygen concentration of the p-type single crystal silicon substrate is in the above range, the bulk lifetime of the substrate can be increased, and the conversion efficiency can be more effectively reduced even if the p-type single crystal silicon substrate is thickened. Can be suppressed. Further, if the gallium concentration of the p-type single crystal silicon substrate is in the above range, the bulk lifetime of the substrate can be further increased, and even if the p-type single crystal silicon substrate is thickened, the conversion efficiency is more effectively reduced. Can be suppressed.
  • a plurality of first finger electrodes and a plurality of second finger electrodes are provided on the non-light-receiving surface of the p-type single crystal silicon substrate, and on the non-light-receiving surface of the p-type single crystal silicon substrate Further, a first bus bar electrode that electrically connects each of the plurality of first finger electrodes and a second bus bar electrode that electrically connects each of the plurality of second finger electrodes are further provided, It is preferable that three or more pairs of one bus bar electrode and the second bus bar electrode are provided.
  • the back junction solar cell of the present invention can improve the yield at the time of manufacture and improve the conversion efficiency.
  • FIG. 1 It is sectional drawing which shows an example of the embodiment of the back junction type solar cell of this invention. It is a figure which shows the example of arrangement
  • the inventors have made extensive studies on a back junction solar cell that can improve the conversion efficiency of energy of light incident from the light receiving surface while suppressing a decrease in yield during manufacturing.
  • the conversion efficiency can be improved, and the present invention has been made.
  • the thickness of the p-type single crystal silicon substrate 11 is 250 ⁇ m or more and 1000 ⁇ m or less, more preferably 500 ⁇ m or more and 800 ⁇ m or less.
  • the back junction solar cell 10 is also provided on the first p-type region (FSF) 12 provided on the light-receiving surface 11 a of the p-type single crystal silicon substrate 11 and on the non-light-receiving surface 11 b of the p-type single crystal silicon substrate 11.
  • a second p-type region (BSF) 14 a passivation film 15 provided on the light-receiving surface 11 a of the p-type single crystal silicon substrate 11, and an antireflection film 16 provided on the passivation film 15 can be included.
  • the passivation film 15 can be a silicon oxide film, for example
  • the antireflection film 16 can be a silicon nitride film, for example.
  • the first p-type region 12 and the second p-type region 14 have a higher dopant concentration than the p-type single crystal silicon substrate 11, that is, have a low resistance. Therefore, as shown in FIG. 1, the p-type single crystal silicon substrate 11 may be represented as p ⁇ , the first p-type region 12 may be represented as p +, and the second p-type region 14 may be represented as p ++. . Similarly, the n-type region 13 may be represented as n +.
  • the bulk lifetime of the substrate can be increased.
  • the thickness of the p-type single crystal silicon substrate 11 in the above range the yield at the time of manufacture can be improved and the conversion efficiency can be improved. That is, by setting it as 250 micrometers or more, board
  • the p-type single crystal silicon substrate 11 is a gallium-doped substrate, but the first p-type region 12 and the second p-type region 14 may be formed by diffusing boron. In this case, the first p-type region 12 and the second p-type region 14 contain both gallium and boron dopants.
  • a passivation film 15 made of a CVD silicon oxide film is provided on the light receiving surface 11 a of the p-type single crystal silicon substrate 11, and no passivation film is provided on the non-light receiving surface 11 b of the p-type single crystal silicon substrate 11. It is preferable.
  • the passivation film is not provided on the non-light-receiving surface 11b of the p-type single crystal silicon substrate 11, the manufacturing process of the solar cell can be simplified.
  • the electrode forming process on the non-light-receiving surface 11b can be simplified. There is a case.
  • a CVD oxide film is used as the passivation film on the light receiving surface 11a, a thermal oxide film is not used. Therefore, it is possible to prevent the gallium concentration in the vicinity of the light receiving surface 11a from being reduced and to prevent a decrease in conversion efficiency. be able to.
  • gallium moves to the thermal oxide films 104 and 104 ′ side in the thermal oxidation process because the segregation coefficient of gallium is small. It is known that the gallium concentration near the surface of the p-type single crystal silicon substrate 101 decreases (gallium depletion).
  • gallium depletion the gallium concentration near the surface of the p-type single crystal silicon substrate 101 decreases.
  • the back junction solar cell 100 includes a p-type single crystal silicon substrate 101, a thermal oxide film (passivation film) 104 provided on the light receiving surface 101a of the p-type single crystal silicon substrate 101, A thermal oxide film (passivation film) 104 ′ provided on the non-light-receiving surface 101 b of the p-type single crystal silicon substrate 101 and an n-type region (emitter) provided on the non-light-receiving surface 101 b of the p-type single crystal silicon substrate 101. 102 and a p-type region (BSF) 103.
  • a thermal oxide film (passivation film) 104 provided on the light receiving surface 101a of the p-type single crystal silicon substrate 101
  • a thermal oxide film (passivation film) 104 ′ provided on the non-light-receiving surface 101 b of the p-type single crystal silicon substrate 101
  • an n-type region (emitter) provided on the non-light-receiving surface 101 b of the
  • the oxygen concentration of the p-type single crystal silicon substrate 11 is 1 ⁇ 10 16 atoms / cm 3 or less, and the gallium concentration of the p-type single crystal silicon substrate 11 is 1 ⁇ 10 16 atoms / cm 3 or less. Is preferred.
  • FIG. 7 shows a graph of the relationship between the gallium concentration in the substrate and the conversion efficiency when the thickness of the substrate is changed to 250 ⁇ m, 500 ⁇ m, and 1000 ⁇ m.
  • the sample used for the measurement was prepared under the same conditions as in Example 1 described later, except for the gallium concentration and the thickness of the substrate.
  • the back junction solar cell 10 also includes a first finger electrode 17 and a second p-type region 14 that are electrically connected to an n-type region 13 provided on the non-light-receiving surface 11 b of the p-type single crystal silicon substrate 11.
  • a second finger electrode 18 electrically connected to the second finger electrode 18.
  • FIG. 2 shows an arrangement example of the first finger electrode 17 and the second finger electrode 18.
  • FIG. 2 is a plan view of the back junction solar cell 10 as viewed from the non-light-receiving surface 11b side, and a bus bar electrode described later is omitted. In FIG.
  • the first finger electrodes 17 and the second finger electrodes 18 are provided so as to extend in one direction, and are arranged so that the first finger electrodes 17 and the second finger electrodes 18 are alternately arranged.
  • An insulating film 19 is partially provided on the first finger electrode 17 and the second finger electrode 18 so that a bus bar electrode, which will be described later, and a finger electrode having a polarity opposite to that of the bus bar electrode are not electrically connected. Yes.
  • the insulating film 19 can be a polyimide film, for example.
  • the back junction solar cell 10 also includes a first electrode that electrically connects each of the plurality of first finger electrodes 17 provided on the non-light-receiving surface 11 b of the p-type single crystal silicon substrate 11.
  • the bus bar electrode 20 and the second bus bar electrode 21 that electrically connects each of the plurality of second finger electrodes 18 can be provided.
  • FIG. 3 shows an arrangement example of the first bus bar electrode 20 and the second bus bar electrode 21.
  • FIG. 3 is a plan view of the back junction solar cell 10 viewed from the non-light-receiving surface 11b side. In FIG.
  • the first bus bar electrode 20 and the second bus bar electrode 21 are provided so as to extend in a direction perpendicular to the direction in which the first finger electrode 17 and the second finger electrode 18 extend, respectively.
  • the electrodes 20 and the second bus bar electrodes 21 are arranged so as to be alternately arranged.
  • a portion on the first finger electrode 17 and the second finger electrode 18 so that the first finger electrode 17 and the second bus bar electrode 21 and the second finger electrode 18 and the first bus bar electrode 20 are electrically insulated. Insulating film 19 is provided. It is preferable that three or more pairs of the first bus bar electrode 20 and the second bus bar electrode 21 are provided.
  • the power loss due to the resistance of the finger electrode can be reduced, and the conversion efficiency can be improved. Further, when the number of bus bar electrode pairs is increased, the contact surface between the substrate and the electrode is increased, and the stress due to the difference in thermal contraction between the substrate and the electrode is increased. If the thickness of the crystalline silicon substrate 11 is in the above range, even if the number of bus bar electrode pairs increases, it is possible to suppress a decrease in yield during manufacturing.
  • Example 1 The back junction solar cell 10 shown in FIG. 1 was produced using the manufacturing method shown below.
  • an n-type region (emitter) 13 and a second p-type region (BSF) 14 having a dopant concentration higher than that of the substrate were formed on the non-light-receiving surface 11b of the dried substrate.
  • the n-type region 13 and the second p-type region 14 are alternately formed in a strip shape, the width of the n-type region 13 is 3 mm, and the width of the second p-type region 14 is 0.6 mm.
  • the n-type region (emitter) 13 was formed as follows. First, a silicon oxide film having a thickness of 150 nm is formed as a diffusion mask on both surfaces of the substrate by plasma CVD, and a non-light-receiving surface 11b of the substrate is formed with a 3.6 mm thick line having a length of 150 mm and a width of 3 mm using an etching paste containing phosphoric acid. Every other 41 pieces were printed in parallel, heat-treated and etched. Thereafter, the substrate subjected to the heat treatment is cleaned in order of 5 minutes by ultrasonic cleaning with detergent, 5 minutes by ultrasonic cleaning with pure water, and 5 minutes by running water cleaning. The residue was removed and the diffusion mask window was opened.
  • a diffusion paste containing phosphoric acid, silica gel, an organic solvent, etc. is applied to the non-light-receiving surface 11b of the substrate by printing, and oxygen is contained in 1% by volume of nitrogen in a state where the two substrates are overlapped with each other. It arrange
  • the formation of the second p-type region (BSF) 14 was performed as follows. First, a silicon oxide film having a thickness of 150 nm is formed as a diffusion mask on both surfaces of the substrate on which the n-type region (emitter) 13 has been formed by plasma CVD, and an etching paste containing phosphoric acid is used on the non-light-receiving surface 11b of the substrate. Forty-two lines having a length of 150 mm and a width of 0.6 mm were printed in parallel every 3.6 ⁇ m, heat-treated, and etched. Thereafter, the substrate subjected to the heat treatment is cleaned in order of 5 minutes by ultrasonic cleaning with detergent, 5 minutes by ultrasonic cleaning with pure water, and 5 minutes by running water cleaning.
  • a diffusion paste containing boric acid, silica gel, an organic solvent, and the like is applied to the non-light-receiving surface 11b of the substrate by printing. It arrange
  • a first p-type region (FSF) 12 having a higher concentration than the substrate was formed on the light receiving surface 11a of the substrate.
  • the first p-type region (FSF) 12 was formed on the entire light receiving surface 11a of the substrate.
  • the first p-type region (FSF) 12 was formed as follows. First, a silicon oxide film having a thickness of 150 nm was formed on the non-light-receiving surface 11b of the substrate on which the n-type region (emitter) 13 and the second p-type region (BSF) 14 were formed by plasma CVD. Next, a diffusion paste containing boric acid, silica gel, an organic solvent, and the like is applied to the light receiving surface 11a of the substrate by printing, and 1% by volume of oxygen is mixed in nitrogen in a state where the two substrates are overlapped with each other. The sample was placed in a gas atmosphere and heat-treated at 900 ° C. for 5 minutes.
  • the boron glass and silicon oxide film formed on the surface of the substrate were removed with hydrofluoric acid. Then, it was immersed in an aqueous solution of 1% hydrochloric acid and 1% hydrogen peroxide maintained at 80 ° C. for 5 minutes, rinsed with pure water for 5 minutes, and then dried in a clean oven.
  • a silicon oxide film having a thickness of 20 nm was formed as a passivation film 15 on the light-receiving surface 11a of the dried substrate by plasma CVD.
  • a silicon nitride film having a thickness of 80 nm and a refractive index of 2.0 was formed as an antireflection film 16 on the silicon oxide film.
  • Plasma CVD was also used to form the silicon nitride film, and a mixed gas of monosilane and ammonia was used as the reaction gas.
  • silver paste was screen-printed in a line-like parallel pattern on the non-light-receiving surface 11b of the substrate and dried.
  • This silver paste is obtained by dispersing silver fine particles having a particle size of several nm to several tens of nm in an organic solvent.
  • heat treatment is performed in an air atmosphere at 800 ° C. for about 10 seconds, silver is sintered, and the first finger electrode 17 electrically connected to the n-type region (emitter) 13 and the second p-type region (BSF)
  • the 2nd finger electrode 18 electrically connected to 14 was formed.
  • first bus bar electrode 20 and second bus bar electrode 21 (a bus bar electrode pair)
  • polyimide is used as an insulating film 19 at a location where the bus bar electrode and the finger electrode having the opposite polarity intersect as shown in FIG.
  • FIG. Was formed by screen printing, heat-treated in an air atmosphere at 300 ° C. for about 5 minutes, and dried. Thereafter, as shown in FIG. 3, three pairs of bus bar electrodes are screen-printed in a line using silver paste on the first finger electrode 17 and the second finger electrode 18 on which the insulating film 19 is formed, and air at 300 ° C. Heat treatment was performed for about 10 minutes in an atmosphere, followed by drying to complete 100 solar cells.
  • Example 2 In the same manner as in Example 1, 100 solar cells were produced. However, the thickness of the substrate was 500 ⁇ m.
  • Example 3 In the same manner as in Example 1, 100 solar cells were produced. However, the thickness of the substrate was 800 ⁇ m.
  • Example 4 In the same manner as in Example 1, 100 solar cells were produced. However, the thickness of the substrate was 1000 ⁇ m.
  • Example 5 In the same manner as in Example 1, 100 solar cells were produced. However, four pairs of bus bar electrodes were used.
  • Example 1 In the same manner as in Example 1, 100 solar cells were produced. However, the thickness of the substrate was 200 ⁇ m.
  • Comparative Example 2 In the same manner as in Example 1, 100 solar cells were produced. However, the thickness of the substrate was 1200 ⁇ m.
  • Example 3 In the same manner as in Example 1, 100 solar cells were produced. However, the thickness of the substrate was 200 ⁇ m, and a boron-doped substrate was used as the semiconductor substrate.
  • Comparative Example 4 In the same manner as in Comparative Example 3, 100 solar cells were produced. However, the thickness of the substrate was 250 ⁇ m.
  • Comparative Example 5 In the same manner as in Comparative Example 3, 100 solar cells were produced. However, the thickness of the substrate was 500 ⁇ m.
  • Comparative Example 6 In the same manner as in Comparative Example 3, 100 solar cells were produced. However, the thickness of the substrate was 800 ⁇ m.
  • Comparative Example 7 In the same manner as in Comparative Example 3, 100 solar cells were produced. However, the thickness of the substrate was 1000 ⁇ m.
  • Example 6 In the same manner as in Example 1, 100 solar cells were produced. However, two pairs of bus bar electrodes were used.
  • Example 8 In the same manner as in Example 1, 100 solar cells were produced. However, the thickness of the substrate was 200 ⁇ m, and the bus bar electrodes were two pairs.
  • Example 9 In the same manner as in Example 1, 100 solar cells were produced. However, the thickness of the substrate was 200 ⁇ m, and the bus bar electrodes were 4 pairs.
  • Example 7 In the same manner as in Example 3, 100 solar cells were produced. However, a silicon oxide film having a thickness of 20 nm was formed on both surfaces of the substrate by thermal oxidation as a passivation film.
  • Example 1-7 and Comparative Example 1-9 produced as described above were subjected to the conditions of AM 1.5 spectrum, irradiation intensity 100 mW / cm 2 , and 25 ° C. using a solar simulator manufactured by Yamashita Denso.
  • the solar cell characteristics (short circuit current, open circuit voltage, form factor conversion efficiency) were measured.
  • the short circuit current is the current value when the resistance of the resistor connected to the solar cell is 0 ⁇
  • the open circuit voltage is the voltage value when the resistance of the resistor connected to the solar cell is very large.
  • the form factor (fill factor) is maximum generated power / (short circuit current ⁇ open circuit voltage) ⁇ 100
  • the conversion efficiency is (output from the solar cell / solar energy entering the solar cell) ⁇ 100.
  • Table 1 shows the average value and yield of the solar cell characteristics obtained as described above.
  • FIG. 4 shows the relationship between the conversion efficiency and yield and the substrate thickness
  • FIG. 5 shows the relationship between the conversion efficiency and yield and the number of bus bar electrode pairs.
  • the substrate is a gallium doped substrate.
  • FIG. 4 is a plot of the relationship between the substrate thickness and the conversion efficiency and the relationship between the substrate thickness and the yield in Examples 1-4 and Comparative Examples 1-7.
  • the thickness of the gallium-doped substrate is 200 ⁇ m as in Comparative Example 1, the yield is greatly reduced (see FIG. 4), but the thickness is significantly improved by setting the thickness of the gallium-doped substrate to 250 ⁇ m or more. (See Example 1-4, Comparative Example 2, and FIG. 4).
  • the conversion efficiency is significantly reduced due to an increase in the thickness of the substrate (see FIG. 4), but gallium-doped as in Example 1-4.
  • the substrate is used, high conversion efficiency can be maintained (see FIG. 4).
  • the thickness of the substrate is 1200 ⁇ m as in Comparative Example 2, a decrease in conversion efficiency cannot be suppressed (see FIG. 4).
  • FIG. 5 is a plot of the relationship between the number of bus bar electrode pairs and the conversion efficiency and the relationship between the number of bus bar electrode pairs and the yield in Examples 1 and 5-6 and Comparative Examples 1 and 8-9. As can be seen from FIG. 5, if the number of bus bar electrode pairs is 3 or more, the conversion efficiency can be improved while suppressing the yield reduction during manufacturing when the thickness of the gallium doped substrate is 250 ⁇ m. Can do.
  • Example 3 Compared to the case where passivation is formed on both surfaces of the substrate as in Example 7 (see FIG. 8), in Example 3, the passivation is formed only on the light-receiving surface of the substrate by plasma CVD. Depletion can be suppressed, current loss of long wavelength light (light having a wavelength of about 900 nm to 1100 nm) can be reduced as shown in FIG. 6, and conversion efficiency can be improved.
  • FIG. 6 is obtained by measuring the relationship between the wavelength of light incident on the light receiving surface of the solar cell and the external quantum efficiency in Examples 3 and 7.
  • the external quantum efficiency is defined as “number of electrons generated per second / number of photons absorbed per second”.
  • the present invention is not limited to the above embodiment.
  • the above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

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Abstract

La présente invention concerne une cellule solaire à jonction arrière ayant une région de type n sur au moins une partie d'une surface ne recevant pas de lumière d'un substrat de silicium monocristallin de type p. La cellule solaire à jonction arrière est caractérisée en ce que le substrat de silicium monocristallin de type p est dopé au gallium, et en ce que l'épaisseur du substrat de silicium monocristallin de type p est comprise entre 250 et 1 000 μm. Il est ainsi possible d'obtenir une cellule solaire à jonction arrière pour laquelle le rendement lors de la fabrication est amélioré, et l'efficacité de conversion d'énergie de la lumière incidente à partir d'une surface de réception de lumière peut être améliorée.
PCT/JP2016/000138 2015-02-05 2016-01-13 Cellule solaire à jonction arrière WO2016125430A1 (fr)

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JP2015021476A JP6141342B2 (ja) 2015-02-05 2015-02-05 裏面接合型太陽電池

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JP6162918B1 (ja) * 2016-11-07 2017-07-12 信越化学工業株式会社 高効率太陽電池の製造方法
WO2018078669A1 (fr) * 2016-10-25 2018-05-03 信越化学工業株式会社 Cellule solaire ayant un rendement de conversion photoélectrique élevé, et procédé de fabrication d'une cellule solaire ayant un rendement de conversion photoélectrique élevé
WO2018092172A1 (fr) * 2016-11-15 2018-05-24 信越化学工業株式会社 Cellule solaire à haut rendement et procédé de fabrication de cellule solaire à haut rendement

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