JP2006120945A - 太陽電池セルおよび太陽電池モジュール - Google Patents
太陽電池セルおよび太陽電池モジュール Download PDFInfo
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- JP2006120945A JP2006120945A JP2004308576A JP2004308576A JP2006120945A JP 2006120945 A JP2006120945 A JP 2006120945A JP 2004308576 A JP2004308576 A JP 2004308576A JP 2004308576 A JP2004308576 A JP 2004308576A JP 2006120945 A JP2006120945 A JP 2006120945A
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- 239000000758 substrate Substances 0.000 claims abstract description 105
- 239000012535 impurity Substances 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 30
- 230000002093 peripheral effect Effects 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 76
- 229910052710 silicon Inorganic materials 0.000 abstract description 76
- 239000010703 silicon Substances 0.000 abstract description 76
- 239000000463 material Substances 0.000 description 16
- 238000002161 passivation Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000002265 prevention Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229960004592 isopropanol Drugs 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
【解決手段】 太陽電池セルは、シリコン基板1と、シリコン基板1の主表面上に形成された電極部とを備え、電極部は、バスバーp電極13と、シリコン基板1の主表面上においてバスバーp電極13と隣り合う位置に間隔を空けて形成されたバスバーn電極14と、バスバーp電極13からバスバーn電極14に向けて延びるフィンガーp電極11と、バスバーn電極14からバスバーp電極13に向けて延び、フィンガーp電極11の近傍に達するフィンガーn電極12とを有し、バスバーp電極13およびバスバーn電極14がシリコン基板1の主表面上で複数形成され、バスバーp電極13およびバスバーn電極14が交互に形成されている。
【選択図】 図10
Description
Claims (4)
- 半導体基板と、
前記半導体基板の主表面上に形成された電極部とを備え、
前記電極部は、第1母線部と、
前記半導体基板の主表面上において前記第1母線部と隣り合う位置に間隔を空けて形成された第2母線部と、
前記第1母線部から前記第2母線部に向けて延びる第1フィンガー部と、
前記第2母線部から前記第1母線部に向けて延び、前記第1フィンガー部の近傍に達する第2フィンガー部とを有し、
前記第1と第2母線部の少なくとも一方が前記半導体基板の主表面上で複数形成され、前記第1と第2母線部が交互に形成される太陽電池セル。 - 前記第1と第2母線部は、前記半導体基板の主表面上において同数形成され、前記第1母線部から前記半導体基板の周縁部までの距離と前記第2母線部から前記半導体基板の周縁部までの距離とが等しい、請求項1に記載の太陽電池セル。
- 互いに電気的に接続された複数の太陽電池セルを含む太陽電池モジュールであって、
前記太陽電池セルにおける半導体基板の裏面上に形成される第1導電型の第1不純物領域および第2導電型の第2不純物領域と、
前記第1不純物領域上に形成される第1フィンガー電極および前記半導体基板の裏面上において前記第1フィンガー電極に交差する方向に形成される第1母線電極と、
前記第2不純物領域上に形成される第2フィンガー電極および前記半導体基板の裏面上において前記第2フィンガー電極に交差する方向に前記第1母線電極と同数形成される第2母線電極とを備え、
前記太陽電池セルにおける前記第1母線電極の端部と他の前記太陽電池セルにおける前記第2母線電極の端部とが向かい合うように複数の前記太陽電池セルが配置され、前記第1と第2母線部が接続部材により電気的に接続された太陽電池モジュール。 - 互いに電気的に接続された複数の太陽電池セルを含む太陽電池モジュールであって、
前記太陽電池セルにおける半導体基板の裏面上に形成される第1導電型の第1不純物領域および第2導電型の第2不純物領域と、
前記第1不純物領域上に形成される第1フィンガー電極および前記半導体基板の裏面上において前記第1フィンガー電極に交差する方向に形成される第1母線電極と、
前記第2不純物領域上に形成される第2フィンガー電極および前記半導体基板の裏面上において前記第2フィンガー電極に交差する方向に前記第1母線電極と同数形成される第2母線電極とを備え、
複数の前記太陽電池セルにおける前記第1母線電極の端部どうし/前記第2母線電極の端部どうしが向かい合うように複数の前記太陽電池セルが配置され、前記第1母線電極の端部どうし/前記第2母線電極の端部どうしが接続部材により電気的に接続された太陽電池モジュール。
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JP2004308576A JP4334455B2 (ja) | 2004-10-22 | 2004-10-22 | 太陽電池モジュール |
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Cited By (27)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008078665A (ja) * | 2006-09-22 | 2008-04-03 | Commiss Energ Atom | 基板にドープ領域を形成する方法及び光電池 |
WO2008078741A1 (ja) * | 2006-12-26 | 2008-07-03 | Kyocera Corporation | 太陽電池モジュール |
JP2008282926A (ja) * | 2007-05-09 | 2008-11-20 | Sanyo Electric Co Ltd | 太陽電池モジュール |
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WO2009025147A1 (ja) * | 2007-08-23 | 2009-02-26 | Sharp Kabushiki Kaisha | 裏面接合型太陽電池、配線基板付き裏面接合型太陽電池、太陽電池ストリングおよび太陽電池モジュール |
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JP2011507245A (ja) * | 2007-12-11 | 2011-03-03 | インスティトュート フィュル ゾラールエネルギーフォルシュング ゲーエムベーハー | 細長い、交差指型のエミッタ領域およびベース領域をうら側に有する裏面電極型太陽電池ならびにその製造方法 |
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