WO2016051659A1 - 研磨用組成物及び研磨方法 - Google Patents
研磨用組成物及び研磨方法 Download PDFInfo
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- WO2016051659A1 WO2016051659A1 PCT/JP2015/004378 JP2015004378W WO2016051659A1 WO 2016051659 A1 WO2016051659 A1 WO 2016051659A1 JP 2015004378 W JP2015004378 W JP 2015004378W WO 2016051659 A1 WO2016051659 A1 WO 2016051659A1
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- Prior art keywords
- acid
- polishing
- polishing composition
- organic acid
- silicon
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 187
- 239000000203 mixture Substances 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 15
- 150000007524 organic acids Chemical class 0.000 claims abstract description 81
- 239000006061 abrasive grain Substances 0.000 claims abstract description 32
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 32
- 229920005591 polysilicon Polymers 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- 239000008119 colloidal silica Substances 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 150000003863 ammonium salts Chemical class 0.000 claims description 5
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 3
- 159000000000 sodium salts Chemical class 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 12
- 150000003377 silicon compounds Chemical class 0.000 abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 41
- -1 for example Inorganic materials 0.000 description 35
- 239000002585 base Substances 0.000 description 34
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 27
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- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 15
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- 230000000052 comparative effect Effects 0.000 description 10
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- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
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- GBFLZEXEOZUWRN-UHFFFAOYSA-N carbocisteine Chemical compound OC(=O)C(N)CSCC(O)=O GBFLZEXEOZUWRN-UHFFFAOYSA-N 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229960003624 creatine Drugs 0.000 description 1
- 239000006046 creatine Substances 0.000 description 1
- 235000018417 cysteine Nutrition 0.000 description 1
- 229960002433 cysteine Drugs 0.000 description 1
- 229960003067 cystine Drugs 0.000 description 1
- CKKXWJDFFQPBQL-UAIGNFCESA-N diazanium;(z)-but-2-enedioate Chemical compound [NH4+].[NH4+].[O-]C(=O)\C=C/C([O-])=O CKKXWJDFFQPBQL-UAIGNFCESA-N 0.000 description 1
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 1
- KCFYHBSOLOXZIF-UHFFFAOYSA-N dihydrochrysin Natural products COC1=C(O)C(OC)=CC(C2OC3=CC(O)=CC(O)=C3C(=O)C2)=C1 KCFYHBSOLOXZIF-UHFFFAOYSA-N 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 108700003601 dimethylglycine Proteins 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-N diphosphoric acid Chemical compound OP(O)(=O)OP(O)(O)=O XPPKVPWEQAFLFU-UHFFFAOYSA-N 0.000 description 1
- IRXRGVFLQOSHOH-UHFFFAOYSA-L dipotassium;oxalate Chemical compound [K+].[K+].[O-]C(=O)C([O-])=O IRXRGVFLQOSHOH-UHFFFAOYSA-L 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- PMMYEEVYMWASQN-UHFFFAOYSA-N dl-hydroxyproline Natural products OC1C[NH2+]C(C([O-])=O)C1 PMMYEEVYMWASQN-UHFFFAOYSA-N 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- YSMODUONRAFBET-UHNVWZDZSA-N erythro-5-hydroxy-L-lysine Chemical compound NC[C@H](O)CC[C@H](N)C(O)=O YSMODUONRAFBET-UHNVWZDZSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- LTHCIVZEQZAFPI-UHFFFAOYSA-N ethane-1,2-diamine;2-(2-hydroxyphenyl)acetic acid Chemical compound NCCN.OC(=O)CC1=CC=CC=C1O LTHCIVZEQZAFPI-UHFFFAOYSA-N 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- NVVZQXQBYZPMLJ-UHFFFAOYSA-N formaldehyde;naphthalene-1-sulfonic acid Chemical compound O=C.C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 NVVZQXQBYZPMLJ-UHFFFAOYSA-N 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 235000011087 fumaric acid Nutrition 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000000855 fungicidal effect Effects 0.000 description 1
- 229960003692 gamma aminobutyric acid Drugs 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 235000013922 glutamic acid Nutrition 0.000 description 1
- 239000004220 glutamic acid Substances 0.000 description 1
- ZDXPYRJPNDTMRX-UHFFFAOYSA-N glutamine Natural products OC(=O)C(N)CCC(N)=O ZDXPYRJPNDTMRX-UHFFFAOYSA-N 0.000 description 1
- 229960002743 glutamine Drugs 0.000 description 1
- ZTOMUSMDRMJOTH-UHFFFAOYSA-N glutaronitrile Chemical compound N#CCCCC#N ZTOMUSMDRMJOTH-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical group 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 229960002591 hydroxyproline Drugs 0.000 description 1
- 239000001863 hydroxypropyl cellulose Chemical class 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- LRDFRRGEGBBSRN-UHFFFAOYSA-N isobutyronitrile Chemical compound CC(C)C#N LRDFRRGEGBBSRN-UHFFFAOYSA-N 0.000 description 1
- 229960000310 isoleucine Drugs 0.000 description 1
- AGPKZVBTJJNPAG-UHFFFAOYSA-N isoleucine Natural products CCC(C)C(N)C(O)=O AGPKZVBTJJNPAG-UHFFFAOYSA-N 0.000 description 1
- 229960003646 lysine Drugs 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- DWPCPZJAHOETAG-UHFFFAOYSA-N meso-lanthionine Natural products OC(=O)C(N)CSCC(N)C(O)=O DWPCPZJAHOETAG-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 229960004452 methionine Drugs 0.000 description 1
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229940078490 n,n-dimethylglycine Drugs 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229960003104 ornithine Drugs 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- COLNVLDHVKWLRT-UHFFFAOYSA-N phenylalanine Natural products OC(=O)C(N)CC1=CC=CC=C1 COLNVLDHVKWLRT-UHFFFAOYSA-N 0.000 description 1
- 229960005190 phenylalanine Drugs 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229960005141 piperazine Drugs 0.000 description 1
- 229960003506 piperazine hexahydrate Drugs 0.000 description 1
- AVRVZRUEXIEGMP-UHFFFAOYSA-N piperazine;hexahydrate Chemical compound O.O.O.O.O.O.C1CNCCN1 AVRVZRUEXIEGMP-UHFFFAOYSA-N 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001195 polyisoprene Polymers 0.000 description 1
- 229920001444 polymaleic acid Polymers 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019448 polyvinylpyrrolidone-vinyl acetate copolymer Nutrition 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- AVTYONGGKAJVTE-UHFFFAOYSA-L potassium tartrate Chemical compound [K+].[K+].[O-]C(=O)C(O)C(O)C([O-])=O AVTYONGGKAJVTE-UHFFFAOYSA-L 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 229960002429 proline Drugs 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- 229940005657 pyrophosphoric acid Drugs 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229940043230 sarcosine Drugs 0.000 description 1
- 229960001153 serine Drugs 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- PNGLEYLFMHGIQO-UHFFFAOYSA-M sodium;3-(n-ethyl-3-methoxyanilino)-2-hydroxypropane-1-sulfonate;dihydrate Chemical compound O.O.[Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC=CC(OC)=C1 PNGLEYLFMHGIQO-UHFFFAOYSA-M 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- RAHZWNYVWXNFOC-UHFFFAOYSA-N sulfur dioxide Inorganic materials O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 1
- 229960003080 taurine Drugs 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 229960002898 threonine Drugs 0.000 description 1
- 229940034208 thyroxine Drugs 0.000 description 1
- XUIIKFGFIJCVMT-UHFFFAOYSA-N thyroxine-binding globulin Natural products IC1=CC(CC([NH3+])C([O-])=O)=CC(I)=C1OC1=CC(I)=C(O)C(I)=C1 XUIIKFGFIJCVMT-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 1
- 229940038773 trisodium citrate Drugs 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000004474 valine Substances 0.000 description 1
- 150000003754 zirconium Chemical class 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention relates to a polishing composition and a polishing method.
- the present invention relates to a method for polishing by selecting a silicon compound or the like other than single silicon while suppressing the polishing rate of single silicon when polishing a layer containing single silicon.
- Patent Document 1 discloses colloidal particles, organic acids, nonionic surfactants, and polishing liquids that have a rapid polishing rate of a layer containing a silicon material other than polysilicon and that can suppress polishing of polysilicon.
- a polishing liquid containing at least one nonionic additive selected from nonionic hydrophilic resins has been proposed.
- this polishing liquid contains a nonionic additive, the cleaning efficiency is not good because the nonionic additive remains after polishing, and the user's request is not sufficiently satisfied.
- An object of the present invention is to provide a polishing composition and a polishing method capable of selectively polishing a silicon compound other than elemental silicon, such as silicon nitride and silicon dioxide, while suppressing the polishing rate of polysilicon. .
- a polishing composition according to an embodiment of the present invention includes abrasive grains, an organic acid, and a conjugate base of the same organic acid as the organic acid.
- the polishing composition of one embodiment can contain abrasive grains, an organic acid, and a conjugate base of the organic acid.
- the organic acid has a pKa value of 0.3 or more and 6.0 or less, and the polishing composition is equal to or more than 1.0 unit smaller than the pKa value of the organic acid.
- the pH value of the pKa value may be 1.5 units or less.
- the conjugate base of the organic acid may be at least one selected from an ammonium salt, a sodium salt, and a potassium salt.
- the abrasive grains may be silica having an organic acid immobilized on the surface.
- the content of abrasive grains may be 0.1% by mass or more and 20.0% by mass or less.
- the content of the conjugate base of the organic acid may be 0.01% by mass or more and 10.0% by mass or less.
- this polishing composition can be used for polishing a substrate containing elemental silicon, particularly polysilicon.
- the gist of a polishing method according to another aspect of the present invention is to polish an object to be polished using the polishing composition of the above embodiment.
- the object to be polished may be a substrate containing polysilicon.
- the polishing composition and polishing method of the present invention can suppress the polishing rate of single silicon, particularly polysilicon, when polishing a substrate containing single silicon. Further, it is possible to polish a silicon compound other than the single silicon, for example, silicon nitride, silicon dioxide and the like at a high polishing rate while suppressing the polishing rate of the single silicon, particularly polysilicon.
- the polishing composition of this embodiment can be produced by mixing abrasive grains, an organic acid, and a conjugate base of an organic acid.
- This polishing composition is used for polishing an object to be polished such as single silicon, silicon compound, metal, etc., for example, polishing the surface of a semiconductor wiring substrate containing single silicon, silicon compound, metal, etc. in a semiconductor device manufacturing process. It is suitable for the use to do. And it is especially suitable for the use which grind
- the single silicon includes polysilicon, single crystal silicon, amorphous silicon, and the like, and the polysilicon includes normal polysilicon and modified polysilicon.
- Modified polysilicon includes silicon doped with an impurity element such as B or P of polysilicon.
- the silicon compound include silicon nitride, silicon oxide, silicon carbide, and the like.
- the silicon compound film includes a low dielectric constant film having a relative dielectric constant of 3 or less.
- the abrasive grains used may be any of inorganic particles, organic particles, and organic-inorganic composite particles.
- the inorganic particles include particles made of metal oxides such as silica, alumina, ceria, titania, silicon nitride particles, silicon carbide particles, and boron nitride particles.
- Specific examples of the organic particles include polymethyl methacrylate (PMMA) particles.
- PMMA polymethyl methacrylate
- These abrasive grains may be used alone or in combination of two or more.
- the abrasive grains may be commercially available products or synthetic products. Among these abrasive grains, silica is preferable, and colloidal silica is particularly preferable.
- the abrasive grains may be surface-modified. Since ordinary colloidal silica has a zeta potential value close to zero under acidic conditions, silica particles are not electrically repelled with each other under acidic conditions and are likely to agglomerate. On the other hand, abrasive grains whose surfaces are modified so that the zeta potential has a relatively large negative value even under acidic conditions are strongly repelled from each other and dispersed well even under acidic conditions, resulting in storage of the polishing composition. Stability will be improved.
- Such surface-modified abrasive grains can be obtained, for example, by mixing a metal such as aluminum, titanium or zirconium or an oxide thereof with the abrasive grains and doping the surface of the abrasive grains.
- colloidal silica in which an organic acid is immobilized can be used.
- the organic acid is immobilized on the surface of the colloidal silica contained in the polishing composition, for example, by chemically bonding a functional group of the organic acid to the surface of the colloidal silica. If the colloidal silica and the organic acid are simply allowed to coexist, the organic acid is not fixed to the colloidal silica. If sulfonic acid, which is a kind of organic acid, is immobilized on colloidal silica, for example, the method described in “Sulfonic acid-functionalized silica through quantitative oxidation of thiol groups”, Chem. Commun. 246-247 (2003) It can be carried out.
- a silane coupling agent having a thiol group such as 3-mercaptopropyltrimethoxysilane is coupled to colloidal silica and then oxidized with hydrogen peroxide to fix the sulfonic acid on the surface.
- the colloidal silica thus obtained can be obtained.
- colloidal silica for example, “Novel Silane Coupling Agents Containing a Photolabile 2-Nitrobenzyl Ester for Introduction of a Carboxy Group on the Surface of Silica Gel”, Chemistry Letters, 3, 228- 229 (2000).
- colloidal silica having a carboxylic acid immobilized on the surface can be obtained by irradiating light after coupling a silane coupling agent containing a photoreactive 2-nitrobenzyl ester to colloidal silica.
- cationic silica produced by adding a basic aluminum salt or a basic zirconium salt as disclosed in JP-A-4-214022 can also be used as abrasive grains.
- the upper limit of the aspect ratio of the abrasive grains in the polishing composition is less than 1.5, preferably 1.3 or less, and more preferably 1.1 or less. Within such a range, the surface roughness caused by the shape of the abrasive grains can be made favorable.
- the aspect ratio is an average of values obtained by dividing the length of the longest side of the smallest rectangle circumscribing the image of the abrasive grains by a scanning electron microscope by the length of the shorter side of the same rectangle, It can be obtained using general image analysis software.
- the lower limit of the average primary particle diameter of the abrasive grains is preferably 5 nm or more, more preferably 7 nm or more, and further preferably 10 nm or more.
- the upper limit of the average primary particle diameter of the abrasive grains is preferably 200 nm or less, more preferably 150 nm or less, and further preferably 100 nm or less.
- the polishing rate of the object to be polished by the polishing composition is improved, and the occurrence of dishing on the surface of the object to be polished after polishing with the polishing composition is further suppressed. Can do.
- the average primary particle diameter of an abrasive grain is calculated based on the specific surface area of the abrasive grain measured by BET method, for example.
- the lower limit of the average secondary particle diameter of the abrasive grains is preferably 25 nm or more, more preferably 30 nm or more, and further preferably 35 nm or more.
- the upper limit of the average secondary particle diameter of the abrasive grains is preferably 300 nm or less, more preferably 260 nm or less, and further preferably 220 nm or less. Within such a range, the polishing rate of the object to be polished by the polishing composition is improved, and the occurrence of surface defects on the surface of the object to be polished after polishing with the polishing composition is further suppressed. be able to.
- the secondary particles referred to here are particles formed by association of abrasive grains in the polishing composition, and the average secondary particle diameter of the secondary particles is measured by, for example, a dynamic light scattering method. be able to.
- the lower limit of the content of abrasive grains in the polishing composition is preferably 0.005% by weight or more, more preferably 0.5% by weight or more, and even more preferably 1% by weight or more. Most preferably, it is 3% by weight or more.
- the upper limit of the content of the abrasive grains in the polishing composition is preferably 50% by weight or less, more preferably 30% by weight or less, and further preferably 20% by weight or less.
- Organic acid and conjugate base of the organic acid is not particularly limited.
- carbonic acid, acetic acid, succinic acid, phthalic acid, and citric acid are preferable.
- the organic acid conjugate base may be any organic acid conjugate base to be used.
- the conjugate base is selected from ammonium salts, sodium salts, potassium salts.
- the lower limit of the content (concentration) of the organic acid in the polishing composition is not particularly limited because it exhibits an effect even in a small amount, it is preferably 0.01 g / L or more, preferably 0.1 g / L. It is more preferably L or more, and further preferably 10 g / L or more.
- the upper limit of the content (concentration) of the organic acid in the polishing composition of the present invention is preferably 100 g / L or less, more preferably 50 g / L or less, and 25 g / L or less. More preferably.
- the lower limit of the content (concentration) of the conjugated base in the polishing composition is not particularly limited because the effect is exhibited even in a small amount, but is preferably 0.01 g / L or more, preferably 0.1 g / L. It is more preferably L or more, and further preferably 1 g / L or more.
- the upper limit of the content (concentration) of the conjugated base in the polishing composition of the present invention is preferably 100 g / L or less, more preferably 50 g / L or less, and 25 g / L or less. More preferably.
- the kind and content of the organic acid and the conjugate base of the organic acid should be appropriately selected and adjusted according to the design of the polishing composition.
- the reason for using a combination of an organic acid and a conjugate base of the organic acid is that such a combination has a “buffer capacity” that keeps the concentration of OH ⁇ acting on single silicon constant. It is because it is thought that it can have. It is considered that the polishing of single silicon is expressed by water-solubilizing Si with OH ⁇ as shown in the following chemical reaction formula.
- H + and OH - for receipt of the presence, H + and OH - also is mixed into the surplus system It is considered that H + and OH ⁇ are kept constant.
- acetate ions absorb H + by the following chemical reaction.
- CH 3 COO ⁇ + H + ⁇ CH 3 COOH When OH ⁇ is mixed in the slurry, undissociated acetic acid absorbs OH ⁇ as shown in the following chemical reaction formula.
- the organic acid has a pKa value of 0.3 or more and 6.0 or less, a value that is 1.0 unit smaller than the pKa value, or 1.5 units of the pKa value. You may have a pH value below a large value.
- the pKa value is within this range, the polishing rate of single silicon tends to be suppressed. This is because OH ⁇ ions cause the polishing rate of simple silicon and the polishing rate of simple silicon can be suppressed by controlling OH ⁇ ions.
- the pH of the polishing composition deviates from the above range with respect to the pKa value of the organic acid, the effect of suppressing the polishing rate of single silicon tends to be reduced.
- the pKa value of the organic acid has a pKa corresponding to the valence, and one of the pKa values may be 0.3 or more and 6.0 or less.
- the organic acid having a pKa value of 0.3 or more and 6.0 or less include carbonic acid, acetic acid, succinic acid, phthalic acid, and citric acid.
- PH adjuster The pH value of the polishing composition can be adjusted by adding a pH regulator.
- the pH adjuster used as necessary to adjust the pH value of the polishing composition to a desired value may be either acid or alkali, and any of inorganic compounds and organic compounds. There may be.
- the acid as the pH adjuster include inorganic acids, organic acids such as carboxylic acids and organic sulfuric acids. As long as the organic acid as a pH adjuster is within a range that does not interfere with the effect of suppressing the polishing rate of single silicon, a kind of organic acid overlapping with the organic acid used together with the conjugate base may be used.
- the inorganic acid include sulfuric acid, nitric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, phosphoric acid and the like.
- carboxylic acid examples include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid Maleic acid, phthalic acid, malic acid, tartaric acid, citric acid, lactic acid and the like.
- organic sulfuric acid include methanesulfonic acid, ethanesulfonic acid, isethionic acid and the like. These acids may be used individually by 1 type, and may be used
- the base as the pH adjusting agent include alkali metal hydroxides or salts thereof, alkaline earth metal hydroxides or salts thereof, quaternary ammonium hydroxide or salts thereof, ammonia, amines, and the like. It is done.
- Specific examples of the alkali metal include potassium and sodium.
- Specific examples of the alkaline earth metal include calcium and strontium.
- specific examples of the salt include carbonate, hydrogen carbonate, sulfate, acetate, and the like.
- specific examples of quaternary ammonium include tetramethylammonium, tetraethylammonium, tetrabutylammonium and the like.
- the quaternary ammonium hydroxide compound includes quaternary ammonium hydroxide or a salt thereof, and specific examples thereof include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide and the like.
- amines include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- ( ⁇ -aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine
- examples include anhydrous piperazine, piperazine hexahydrate, 1- (2-aminoethyl) piperazine, N-methylpiperazine, guanidine and the like. These bases may be used individually by 1 type, and may be used in combination of 2 or more type.
- the polishing composition contains a potassium compound as a base from the viewpoint of preventing metal contamination.
- the potassium compound include potassium hydroxide or potassium salt, and specific examples include potassium hydroxide, potassium carbonate, potassium hydrogen carbonate, potassium sulfate, potassium acetate, and potassium chloride.
- a complexing agent may be added to the polishing composition.
- the complexing agent has a function of chemically etching the surface of the object to be polished.
- Specific examples of the complexing agent include inorganic acids or salts thereof, organic acids or salts thereof, nitrile compounds, amino acids, chelating agents and the like.
- the organic acid as the complexing agent is within a range that does not hinder the polishing rate suppressing effect of the single silicon, a kind of organic acid overlapping with the organic acid used together with the organic acid conjugate base may be used.
- These complexing agents may be used singly or in combination of two or more. These complexing agents may be commercially available products or synthetic products.
- the inorganic acid examples include hydrochloric acid, sulfuric acid, nitric acid, carbonic acid, boric acid, tetrafluoroboric acid, hypophosphorous acid, phosphorous acid, phosphoric acid, pyrophosphoric acid and the like.
- Specific examples of the organic acid include carboxylic acid and sulfonic acid.
- carboxylic acid examples include formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n- Monovalent carboxylic acids such as heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, lactic acid, glycolic acid, glyceric acid, benzoic acid, salicylic acid, oxalic acid, malonic acid, succinic acid, glutar Examples thereof include polyvalent carboxylic acids such as acid, gluconic acid, adipic acid, pimelic acid, maleic acid, phthalic acid, fumaric acid, malic acid, tartaric acid and citric acid.
- sulfonic acid include methanesulfonic acid, ethane
- salts of these inorganic acids or organic acids can be used, and in particular, salts of weak acid and strong base, salts of strong acid and weak base, or salts of weak acid and weak base are used.
- a buffering effect on pH can be expected.
- salts include potassium chloride, sodium sulfate, potassium nitrate, potassium carbonate, potassium tetrafluoroborate, potassium pyrophosphate, potassium oxalate, trisodium citrate, (+)-potassium tartrate, hexafluorophosphoric acid Examples include potassium.
- nitrile compound examples include acetonitrile, aminoacetonitrile, propionitrile, butyronitrile, isobutyronitrile, benzonitrile, glutaronitrile, methoxyacetonitrile and the like.
- amino acids include glycine, ⁇ -alanine, ⁇ -alanine, N-methylglycine, N, N-dimethylglycine, 2-aminobutyric acid, norvaline, valine, leucine, norleucine, isoleucine, phenylalanine, proline, Sarcosine, ornithine, lysine, taurine, serine, threonine, homoserine, tyrosine, bicine, tricine, 3,5-diiodotyrosine, ⁇ - (3,4-dihydroxyphenyl) alanine, thyroxine, 4-hydroxyproline, cysteine, methionine , Ethionine, lanthionine, cystathionine, cystine, cysteic acid, aspartic acid, glutamic acid, S- (carboxymethyl) cysteine, 4-aminobutyric acid, asparagine, glutamine, azaserine,
- chelating agent examples include nitrilotriacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetraacetic acid, N, N, N-trimethylenephosphonic acid, ethylenediamine-N, N, N ′, N′-tetramethylenesulfonic acid, Transcyclohexanediaminetetraacetic acid, 1,2-diaminopropanetetraacetic acid, glycol etherdiaminetetraacetic acid, ethylenediamine orthohydroxyphenylacetic acid, ethylenediamine disuccinic acid (SS form), N- (2-carboxylateethyl) -L-aspartic acid , ⁇ -alanine diacetate, 2-phosphonobutane-1,2,4-tricarboxylic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, N, N′-bis (2-hydroxybenzyl) ethylenediamine-N, N′- Diac
- At least one selected from the group consisting of an inorganic acid or a salt thereof, a carboxylic acid or a salt thereof, and a nitrile compound is preferable, from the viewpoint of the stability of the complex structure with the metal compound contained in the object to be polished.
- An inorganic acid or a salt thereof is more preferable.
- the lower limit value of the content of the complexing agent in the entire polishing composition is not particularly limited because the effect is exhibited even in a small amount, but the higher the content of the complexing agent, the more the polishing object by the polishing composition. Therefore, the content of the complexing agent in the entire polishing composition is preferably 0.001 g / L or more, more preferably 0.01 g / L or more, and 1 g / L. More preferably, it is the above. Further, as the content of the complexing agent in the entire polishing composition is smaller, dissolution of the object to be polished is less likely to occur, and the step resolution is improved. Therefore, the content of the complexing agent in the entire polishing composition is preferably 20 g / L or less, more preferably 15 g / L or less, and even more preferably 10 g / L or less.
- a surfactant may be added to the polishing composition. Since the surfactant has an action of imparting hydrophilicity to the polished surface of the polished object after polishing, it can improve the cleaning efficiency of the polished object after polishing and suppress the adhesion of dirt and the like. it can.
- the surfactant any of an anionic surfactant, a cationic surfactant, an amphoteric surfactant, and a nonionic surfactant can be used.
- anionic surfactant examples include polyoxyethylene alkyl ether acetic acid, polyoxyethylene alkyl sulfuric acid ester, alkyl sulfuric acid ester, polyoxyethylene alkyl sulfuric acid, alkyl sulfuric acid, alkylbenzene sulfonic acid, alkyl phosphoric acid ester, polyoxyethylene Examples thereof include ethylene alkyl phosphates, polyoxyethylene sulfosuccinic acid, alkyl sulfosuccinic acid, alkyl naphthalene sulfonic acid, alkyl diphenyl ether disulfonic acid, and salts thereof.
- cationic surfactant examples include alkyl trimethyl ammonium salt, alkyl dimethyl ammonium salt, alkyl benzyl dimethyl ammonium salt, and alkyl amine salt.
- amphoteric surfactants include alkyl betaines and alkyl amine oxides.
- specific examples of the nonionic surfactant include polyoxyethylene alkyl ether, polyoxyalkylene alkyl ether, sorbitan fatty acid ester, glycerin fatty acid ester, polyoxyethylene fatty acid ester, polyoxyethylene alkylamine, and alkylalkanolamide. can give. These surfactants may be used individually by 1 type, and may be used in combination of 2 or more type.
- the surfactant content in the entire polishing composition increases, the cleaning efficiency of the polishing object after polishing is further improved. Therefore, the surfactant content in the entire polishing composition is 0.0001 g / L or more. It is preferable that it is 0.001 g / L or more. Further, the smaller the surfactant content in the polishing composition as a whole, the less surfactant remains on the polished surface of the polished object after polishing, and the cleaning efficiency is further improved.
- the surfactant content in the whole product is preferably 10 g / L or less, and more preferably 1 g / L or less.
- a water-soluble polymer may be added to the polishing composition.
- a water-soluble polymer is added to the polishing composition, the surface roughness of the polished object after polishing is further reduced (smoothed).
- Specific examples of water-soluble polymers include polystyrene sulfonate, polyisoprene sulfonate, polyacrylate, polymaleic acid, polyitaconic acid, polyvinyl acetate, polyvinyl alcohol, polyglycerin, polyvinyl pyrrolidone, isoprene sulfonic acid and acrylic.
- Acid copolymer polyvinylpyrrolidone polyacrylic acid copolymer, polyvinylpyrrolidone vinyl acetate copolymer, naphthalenesulfonic acid formalin condensate salt, diallylamine hydrochloride sulfur dioxide copolymer, carboxymethylcellulose, carboxymethylcellulose salt, hydroxy Examples include ethyl cellulose, hydroxypropyl cellulose, pullulan, chitosan, and chitosan salts. These water-soluble polymers may be used alone or in combination of two or more.
- the content of the water-soluble polymer in the entire polishing composition is larger, the surface roughness of the polishing surface of the object to be polished is further reduced, so that the content of the water-soluble polymer in the entire polishing composition is 0. It is preferably 0001 g / L or more, and more preferably 0.001 g / L or more. Further, as the content of the water-soluble polymer in the entire polishing composition is smaller, the remaining amount of the water-soluble polymer on the polishing surface of the object to be polished is reduced and the cleaning efficiency is further improved.
- the water-soluble polymer content in is preferably 10 g / L or less, more preferably 1 g / L or less.
- antiseptic and fungicide examples include 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one. And the like, and isothiazoline preservatives such as paraoxybenzoic acid esters and phenoxyethanol. These antiseptics and fungicides may be used alone or in combination of two or more.
- a dispersion medium or a solvent for dispersing or dissolving each component is usually used.
- the dispersion medium or solvent an organic solvent and water are conceivable, and among them, water is preferably included. From the viewpoint of inhibiting the action of other components, water containing as little impurities as possible is preferable. Specifically, pure water, ultrapure water, or distilled water from which foreign ions are removed through a filter after removing impurity ions with an ion exchange resin is preferable.
- Manufacturing method of polishing composition The manufacturing method of the polishing composition of this invention is not restrict
- the temperature at which each component is mixed is not particularly limited, but is preferably 10 to 40 ° C., and may be heated to increase the dissolution rate. Further, the mixing time is not particularly limited.
- polishing method As a polishing apparatus, a general holder having a polishing surface plate on which a holder for holding a substrate having a polishing object and a motor capable of changing the number of rotations are attached and a polishing pad (polishing cloth) can be attached.
- a polishing apparatus can be used.
- polishing pad As the polishing pad, a general nonwoven fabric, polyurethane, porous fluororesin, or the like can be used without particular limitation. It is preferable that the polishing pad is grooved so that the polishing liquid accumulates.
- the polishing conditions are not particularly limited.
- the rotation speed of the polishing platen is preferably 10 to 500 rpm, and the pressure (polishing pressure) applied to the substrate having the object to be polished is preferably 0.1 to 10 psi.
- the method of supplying the polishing composition to the polishing pad is not particularly limited, and for example, a method of continuously supplying with a pump or the like is employed. Although the supply amount is not limited, it is preferable that the surface of the polishing pad is always covered with the polishing composition of the present invention. After polishing, the substrate is washed in running water, and water droplets adhering to the substrate are removed by a spin dryer or the like and dried to obtain a substrate having a layer containing single silicon.
- Example 1 the colloidal silica having sulfonic acid immobilized on the surface, various organic acids, various conjugate bases, and water as a liquid medium were mixed, and Examples 1, 2 and Comparative Examples 1 to 5 polishing compositions were produced.
- Table 1 in Examples 1 and 2, maleic acid and ammonium maleate, acetic acid and ammonium acetate were used as organic acid and organic acid conjugate base, respectively, and Comparative Examples 1 to 3 and 5 were used.
- Comparative Example 4 maleic acid and ammonium citrate were used as the organic acid and organic acid conjugate base.
- the average primary particle diameter of colloidal silica having sulfonic acid immobilized on the surface is 35 nm, and the average secondary particle diameter is 70 nm. is there. Further, in the polishing compositions of Examples 1 and 2 and Comparative Examples 1 to 5, the content of the entire polishing composition of colloidal silica having sulfonic acid immobilized on the surface thereof is 3.8% by mass. . Further, in the polishing compositions of Examples 1 and 2 and Comparative Examples 1 to 5, as shown in Table 1, the pKa value of the organic acid is one value for acetic acid, two values for maleic acid, and three values for citric acid. The pH value of the polishing composition adjusted with the pH adjuster is as shown in Table 1, and all are in the range of 5.0 to 5.3.
- polishing compositions of Examples 1 and 2 and Comparative Examples 1 to 5 Using the polishing compositions of Examples 1 and 2 and Comparative Examples 1 to 5, a polysilicon film, a silicon dioxide film and a silicon nitride film formed on a silicon wafer having a diameter of 300 mm were polished under the following polishing conditions. .
- Polishing device FREX 300E (Ebara Seisakusho) Polishing pressure: 2.0 psi Rotating speed of polishing surface plate: 60rpm Carrier rotation speed: 58rpm Supply amount of polishing composition: 300 ml / min Polishing time: 60 seconds
- Silicon wafers subjected to polishing are silicon wafers with a silicon dioxide film (tetraethoxysilane film), silicon wafers with a polysilicon film, and silicon wafers with a silicon nitride film.
- a silicon wafer with a silicon dioxide film (tetraethoxysilane film) is “oxide”
- a silicon wafer with a polycrystalline silicon film is “poly-Si”
- a silicon wafer with a silicon nitride film is “SiN”. It showed.
- polishing was measured, respectively using the optical interference type film thickness measuring apparatus. Then, the polishing rates of silicon dioxide, polysilicon, and silicon nitride were calculated from the film thickness difference and the polishing time, respectively. The results are shown in Table 1.
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Abstract
Description
一実施形態の研磨用組成物は、砥粒、有機酸、及びこの有機酸の共役塩基を含有することができる。
一実施形態のこの研磨用組成物においては、有機酸は、0.3以上6.0以下のpKa値を有し、研磨用組成物は、有機酸のpKa値の1.0単位小さい値以上、同pKa値の1.5単位大きい値以下のpH値を有してもよい。
一実施形態の研磨用組成物において、砥粒は表面に有機酸を固定化したシリカであってもよい。
一実施形態の研磨用組成物において、砥粒の含有量が0.1質量%以上、20.0質量%以下であってもよい。
さらに、この研磨用組成物は、単体シリコン、特にポリシリコンを含有する基板の研磨に使用されることができる。
また、本発明の他の態様に係る研磨方法は、上記の実施形態の研磨用組成物を用いて研磨対象物を研磨することを要旨とする。この研磨方法においては、研磨対象物がポリシリコンを含有する基板であってもよい。
この研磨用組成物は、単体シリコン、シリコン化合物、金属等の研磨対象物を研磨する用途、例えば、半導体デバイスの製造プロセスにおいて半導体配線基板の単体シリコン、シリコン化合物、金属等を含んだ表面を研磨する用途に好適である。そして、ポリシリコンを含む基板を研磨する用途に特に好適である。単体シリコンには、ポリシリコン、単結晶シリコン、アモルファスシリコン等が含まれ、ポリシリコンには、通常のポリシリコンや、変性ポリシリコンが含まれる。変性ポリシリコンには、ポリシリコンのBやP等の不純物元素をドーピングしたシリコンが包含される。また、シリコン化合物としては、例えば、窒化ケイ素、酸化ケイ素、炭化ケイ素等が挙げられる。シリコン化合物膜には、比誘電率が3以下の低誘電率被膜が含まれる。単体シリコンの研磨速度を抑制して、単体シリコン以外のケイ素化合物を高研磨速度で研磨することができる。
1.砥粒について
使用される砥粒は、無機粒子、有機粒子、および有機無機複合粒子のいずれであってもよい。無機粒子の具体例としては、例えば、シリカ、アルミナ、セリア、チタニア等の金属酸化物からなる粒子、窒化ケイ素粒子、炭化ケイ素粒子、窒化ホウ素粒子が挙げられる。有機粒子の具体例としては、例えば、ポリメタクリル酸メチル(PMMA)粒子が挙げられる。該砥粒は、単独でもまたは2種以上混合して用いてもよい。また、該砥粒は、市販品を用いてもよいし合成品を用いてもよい。
これら砥粒の中でも、シリカが好ましく、特に好ましいのはコロイダルシリカである。
砥粒は表面修飾されていてもよい。通常のコロイダルシリカは、酸性条件下でゼータ電位の値がゼロに近いために、酸性条件下ではシリカ粒子同士が互いに電気的に反発せず凝集を起こしやすい。これに対し、酸性条件でもゼータ電位が比較的大きな負の値を有するように表面修飾された砥粒は、酸性条件下においても互いに強く反発して良好に分散する結果、研磨用組成物の保存安定性を向上させることになる。このような表面修飾砥粒は、例えば、アルミニウム、チタンまたはジルコニウムなどの金属あるいはそれらの酸化物を砥粒と混合して砥粒の表面にドープさせることにより得ることができる。
また、特開平4-214022号公報に開示されるような、塩基性アルミニウム塩また
は塩基性ジルコニウム塩を添加して製造したカチオン性シリカを砥粒として用いることもできる。
研磨用組成物中の砥粒のアスペクト比の上限は、1.5未満であり、1.3以下であることが好ましく、1.1以下であることがより好ましい。このような範囲であれば、砥粒の形状が原因の表面粗さを良好なものとすることができる。なお、アスペクト比は、走査型電子顕微鏡による砥粒粒子の画像に外接する最小の長方形の長辺の長さを同じ長方形の短辺の長さで除することにより得られる値の平均であり、一般的な画像解析ソフトウエアを用いて求めることができる。
砥粒の平均一次粒子径の下限は、5nm以上であることが好ましく、7nm以上であることがより好ましく、10nm以上であることがさらに好ましい。また、砥粒の平均一次粒子径の上限は、200nm以下であることが好ましく、150nm以下であることがより好ましく、100nm以下であることがさらに好ましい。このような範囲であれば、研磨用組成物による研磨対象物の研磨速度は向上し、また、研磨用組成物を用いて研磨した後の研磨対象物の表面にディッシングが生じるのをより抑えることができる。なお、砥粒の平均一次粒子径は、例えば、BET法で測定される砥粒の比表面積に基づいて算出される。
砥粒の平均二次粒子径の下限は、25nm以上であることが好ましく、30nm以上であることがより好ましく、35nm以上であることがさらに好ましい。また、砥粒の平均二次粒子径の上限は、300nm以下であることが好ましく、260nm以下であることがより好ましく、220nm以下であることがさらに好ましい。このような範囲であれば、研磨用組成物による研磨対象物の研磨速度は向上し、また、研磨用組成物を用いて研磨した後の研磨対象物の表面に表面欠陥が生じるのをより抑えることができる。なお、ここでいう二次粒子とは、砥粒が研磨用組成物中で会合して形成する粒子をいい、この二次粒子の平均二次粒子径は、例えば動的光散乱法により測定することができる。
研磨用組成物中の砥粒の含有量が、0.005重量%以上であると 研磨対象物の研磨速度が向上することができ、また、50重量%以下であると研磨用組成物のコストを抑えることができ、研磨用組成物を用いて研磨した後の研磨対象物の表面に表面欠陥が生じるのをより抑えることができる。
本発明の一実施形態において、有機酸は、特に限定されない。例えば、炭酸、酢酸、コハク酸、フタル酸、クエン酸が好ましい。また、有機酸の共役塩基としては、使用する有機酸の共役塩基であればよい。一実施形態において、共役塩基は、アンモニウム塩、ナトリウム塩、カリウム塩から選ばれる。
研磨用組成物中の有機酸の含有量(濃度)の下限は、少量でも効果を発揮するため特に限定されるものではないが、0.01g/L以上であることが好ましく、0.1g/L以上であることがより好ましく、10g/L以上であることがさらに好ましい。また、本発明の研磨用組成物中の有機酸の含有量(濃度)の上限は、100g/L以下であることが好ましく、50g/L以下であることがより好ましく、25g/L以下であることがさらに好ましい。
CH3COO- + H+ → CH3COOH
また、OH-がスラリー内に混入した場合、下記の化学反応式のように未解離の酢酸がOH-を吸収する。
CH3COOH + OH- → CH3COO- +H2O
このように、有機酸とその有機酸の共役塩基の系では、H+とOH-の受け取りが存在する。その結果、単体シリコンに作用するOH-がスラリー内の緩衝反応によって、消費され、単体シリコンの研磨速度を下げるのではないかと推測している。また、pHが有機酸のもつpKa近傍であると、OH―は非常に少ないため、スラリー内に少しでも吸収されると研磨速度の抑制の効果が顕著に得られるのではないかと推測される。
有機酸のpKa値は、有機酸が多価の場合、その価数分のpKaを有するが、そのうちの1つのpKa値が0.3以上6.0以下であればよい。pKa値が0.3以上6.0以下の有機酸の例としては、炭酸、酢酸、コハク酸、フタル酸、クエン酸等が挙げられる。
研磨用組成物には、その性能を向上させるために、pH調整剤、錯化剤、界面活性剤、水溶性高分子、防カビ剤等の各種添加剤を添加してもよい。
(pH調整剤)
研磨用組成物のpHの値は、pH調節剤の添加により調整することができる。研磨用組成物のpHの値を所望の値に調整するために必要に応じて使用されるpH調節剤は、酸及びアルカリのいずれであってもよく、また、無機化合物及び有機化合物のいずれであってもよい。
アルカリ金属の具体例としては、カリウム、ナトリウム等があげられる。また、アルカリ土類金属の具体例としては、カルシウム、ストロンチウム等があげられる。さらに、塩の具体例としては、炭酸塩、炭酸水素塩、硫酸塩、酢酸塩等があげられる。さらに、第四級アンモニウムの具体例としては、テトラメチルアンモニウム、テトラエチルアンモニウム、テトラブチルアンモニウム等があげられる。
水酸化第四級アンモニウム化合物としては、水酸化第四級アンモニウム又はその塩を含み、具体例としては、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、水酸化テトラブチルアンモニウム等があげられる。
また、研磨用組成物には、塩基として、金属汚染防止の観点からカリウム化合物を含むことがさらに好ましい。カリウム化合物としては、カリウムの水酸化物又はカリウム塩があげられ、具体的には水酸化カリウム、炭酸カリウム、炭酸水素カリウム、硫酸カリウム、酢酸カリウム、塩化カリウム等があげられる。
研磨用組成物による研磨対象物の研磨速度を向上させるために、研磨用組成物に錯化剤を添加してもよい。錯化剤は、研磨対象物の表面を化学的にエッチングする作用を有する。錯化剤の具体例としては、無機酸又はその塩、有機酸又はその塩、ニトリル化合物、アミノ酸、キレート剤等があげられる。錯化剤としての有機酸は、単体シリコンの研磨速度抑制効果を妨げない範囲であれば、有機酸の共役塩基と共に使用する有機酸と重複する種類の有機酸を使用してもよい。これらの錯化剤は、1種を単独で用いてもよいし、2種以上を組み合わせて用いてもよい。また、これらの錯化剤は、市販品を用いてもよいし合成品を用いてもよい。
また、有機酸の具体例としては、カルボン酸、スルホン酸等があげられる。カルボン酸の具体例としては、ギ酸、酢酸、プロピオン酸、酪酸、吉草酸、2-メチル酪酸、n-ヘキサン酸、3,3-ジメチル酪酸、2-エチル酪酸、4-メチルペンタン酸、n-ヘプタン酸、2-メチルヘキサン酸、n-オクタン酸、2-エチルヘキサン酸、乳酸、グリコール酸、グリセリン酸、安息香酸、サリチル酸等の一価カルボン酸や、シュウ酸、マロン酸、コハク酸、グルタル酸、グルコン酸、アジピン酸、ピメリン酸、マレイン酸、フタル酸、フマル酸、リンゴ酸、酒石酸、クエン酸等の多価カルボン酸があげられる。また、スルホン酸の具体例としては、メタンスルホン酸、エタンスルホン酸、イセチオン酸等があげられる。
また、ニトリル化合物の具体例としては、アセトニトリル、アミノアセトニトリル、プロピオニトリル、ブチロニトリル、イソブチロニトリル、ベンゾニトリル、グルタロジニトリル、メトキシアセトニトリル等があげられる。
また、研磨用組成物全体における錯化剤の含有量が少ないほど、研磨対象物の溶解が生じにくく段差解消性が向上する。よって、研磨用組成物全体における錯化剤の含有量は、20g/L以下であることが好ましく、15g/L以下であることがより好ましく、10g/L以下であることがさらに好ましい。
研磨用組成物には界面活性剤を添加してもよい。界面活性剤は、研磨後の研磨対象物の研磨表面に親水性を付与する作用を有しているので、研磨後の研磨対象物の洗浄効率を良好にし、汚れの付着等を抑制することができる。界面活性剤としては、陰イオン性界面活性剤、陽イオン性界面活性剤、両性界面活性剤、及び非イオン性界面活性剤のいずれも使用することができる。
さらに、両性界面活性剤の具体例としては、アルキルベタイン、アルキルアミンオキシドがあげられる。
さらに、非イオン性界面活性剤の具体例としては、ポリオキシエチレンアルキルエーテル、ポリオキシアルキレンアルキルエーテル、ソルビタン脂肪酸エステル、グリセリン脂肪酸エステル、ポリオキシエチレン脂肪酸エステル、ポリオキシエチレンアルキルアミン、アルキルアルカノールアミドがあげられる。
これらの界面活性剤は、1種を単独で用いてもよいし、2種以上を組み合わせて用いてもよい。
また、研磨用組成物全体における界面活性剤の含有量が少ないほど、研磨後の研磨対象物の研磨面への界面活性剤の残存量が低減され、洗浄効率がより向上するので、研磨用組成物全体における界面活性剤の含有量は10g/L以下であることが好ましく、1g/L以下であることがより好ましい。
研磨用組成物には水溶性高分子を添加してもよい。研磨用組成物に水溶性高分子を添加すると、研磨後の研磨対象物の表面粗さがより低減する(平滑となる)。
水溶性高分子の具体例としては、ポリスチレンスルホン酸塩、ポリイソプレンスルホン酸塩、ポリアクリル酸塩、ポリマレイン酸、ポリイタコン酸、ポリ酢酸ビニル、ポリビニルアルコール、ポリグリセリン、ポリビニルピロリドン、イソプレンスルホン酸とアクリル酸の共重合体、ポリビニルピロリドンポリアクリル酸共重合体、ポリビニルピロリドン酢酸ビニル共重合体、ナフタレンスルホン酸ホルマリン縮合物の塩、ジアリルアミン塩酸塩二酸化硫黄共重合体、カルボキシメチルセルロース、カルボキシメチルセルロースの塩、ヒドロキシエチルセルロース、ヒドロキシプロピルセルロース、プルラン、キトサン、及びキトサン塩類があげられる。これらの水溶性高分子は、1種を単独で用いてもよいし、2種以上を組み合わせて用いてもよい。
また、研磨用組成物全体における水溶性高分子の含有量が少ないほど、研磨対象物の研磨面への水溶性高分子の残存量が低減され洗浄効率がより向上するので、研磨用組成物全体における水溶性高分子の含有量は、10g/L以下であることが好ましく、1g/L以下であることがより好ましい。
本発明に係る研磨用組成物に添加し得る防腐剤および防カビ剤としては、例えば、2-メチル-4-イソチアゾリン-3-オンや5-クロロ-2-メチル-4-イソチアゾリン-3-オン等のイソチアゾリン系防腐剤、パラオキシ安息香酸エステル類、及びフェノキシエタノール等が挙げられる。これら防腐剤および防カビ剤は、単独でもまたは2種以上混合して用いてもよい。
本発明の研磨用組成物は、通常各成分の分散または溶解のための分散媒または溶媒が用いられる。分散媒または溶媒としては有機溶媒、水が考えられるが、その中でも水を含むことが好ましい。他の成分の作用を阻害するという観点から、不純物をできる限り含有しない水が好ましい。具体的には、イオン交換樹脂にて不純物イオンを除去した後フィルタを通して異物を除去した純水や超純水、または蒸留水が好ましい。
本発明の研磨用組成物の製造方法は、特に制限されず、必要に応じて他の成分を、水中で攪拌混合することにより得ることができる。
各成分を混合する際の温度は特に制限されないが、10~40℃が好ましく、溶解速度を上げるために加熱してもよい。また、混合時間も特に制限されない。
(研磨装置)
研磨装置としては、研磨対象物を有する基板等を保持するホルダーと回転数を変更可能なモータ等とが取り付けてあり、研磨パッド(研磨布)を貼り付け可能な研磨定盤を有する一般的な研磨装置を使用することができる。
(研磨パッド)
前記研磨パッドとしては、一般的な不織布、ポリウレタン、および多孔質フッ素樹脂等を特に制限なく使用することができる。研磨パッドには、研磨液が溜まるような溝加工が施されていることが好ましい。
研磨条件にも特に制限はなく、例えば、研磨定盤の回転速度は、10~500rpmが好ましく、研磨対象物を有する基板にかける圧力(研磨圧力)は、0.1~10psiが好ましい。研磨パッドに研磨用組成物を供給する方法も特に制限されず、例えば、ポンプ等で連続的に供給する方法が採用される。この供給量に制限はないが、研磨パッドの表面が常に本発明の研磨用組成物で覆われていることが好ましい。
研磨終了後、基板を流水中で洗浄し、スピンドライヤ等により基板上に付着した水滴を払い落として乾燥させることにより、単体シリコンを含む層を有する基板が得られる。
以下に実施例及び比較例を示し、本発明をさらに具体的に説明する。
表1に示すように、表面にスルホン酸を固定化したコロイダルシリカと、各種の有機酸と、各種の共役塩基と、液状媒体である水とを混合して、実施例1、2及び比較例1~5の研磨用組成物を製造した。この際、表1に示されるように、実施例1及び2では、有機酸及び有機酸の共役塩基としてマレイン酸とマレイン酸アンモニウム、酢酸と酢酸アンモニウムをそれぞれ使用し、比較例1~3及び5では、有機酸の共役塩基ではなく硫酸アンモニウムを使用し、比較例4では有機酸及び有機酸の共役塩基としてマレイン酸とクエン酸アンモニウムを使用した。
研磨装置:FREX 300E(荏原製作所製)
研磨圧力:2.0psi
研磨定盤の回転速度:60rpm
キャリアの回転速度:58rpm
研磨用組成物の供給量:300ml/分
研磨時間:60秒
各シリコンウェーハについては、光干渉式膜厚測定装置を用いて、研磨前と研磨後の各膜の膜厚をそれぞれ測定した。そして、膜厚差と研磨時間から、二酸化ケイ素、ポリシリコン、窒化ケイ素の研磨速度をそれぞれ算出した。結果を表1に示す。
Claims (11)
- 砥粒、有機酸、及び前記有機酸の共役塩基を含有する研磨用組成物。
- 前記有機酸は、0.3以上6.0以下のpKa値を有し、前記研磨用組成物は、前記pKa値の1.0単位小さい値以上、前記pKa値の1.5単位大きい値以下のpH値を有する、請求項1に記載の研磨用組成物。
- 前記有機酸の共役塩基が、アンモニウム塩、ナトリウム塩、カリウム塩から選ばれる少なくとも1種である請求項1に記載の研磨用組成物。
- 前記砥粒が表面に有機酸を固定化したシリカである請求項1~3のいずれか一項に記載の研磨用組成物。
- 前記表面に有機酸を固定化したコロイダルシリカの含有量が0.1質量%以上、20.0質量%以下である請求項1~4のいずれか一項に記載の研磨用組成物。
- 前記有機酸の共役塩基の含有量が、0.01質量%以上、10.0質量%以下である請求項1~5のいずれか一項に記載の研磨用組成物。
- 前記有機酸の含有量が、0.01質量%以上、10.0質量%以下である請求項1~6のいずれか一項に記載の研磨用組成物。
- 単体シリコンを含有する基板の研磨に使用されることを特徴とする請求項1~7のいずれか一項に記載の研磨用組成物。
- 前記単体シリコンが、ポリシリコンである請求項8に記載の研磨用組成物。
- 請求項1~9のいずれか一項に記載の研磨用組成物を使用して研磨する研磨方法。
- ポリシリコンを含有する基板を研磨する請求項10に記載の研磨方法。
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TW201617433A (zh) | 2016-05-16 |
JP6396740B2 (ja) | 2018-09-26 |
CN106687554A (zh) | 2017-05-17 |
KR102387645B1 (ko) | 2022-04-18 |
TWI677569B (zh) | 2019-11-21 |
KR20170063597A (ko) | 2017-06-08 |
JP2016069438A (ja) | 2016-05-09 |
US10093834B2 (en) | 2018-10-09 |
US20170298253A1 (en) | 2017-10-19 |
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