WO2015182643A1 - Élément de réluctance, capteur magnétique et capteur de courant - Google Patents

Élément de réluctance, capteur magnétique et capteur de courant Download PDF

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WO2015182643A1
WO2015182643A1 PCT/JP2015/065213 JP2015065213W WO2015182643A1 WO 2015182643 A1 WO2015182643 A1 WO 2015182643A1 JP 2015065213 W JP2015065213 W JP 2015065213W WO 2015182643 A1 WO2015182643 A1 WO 2015182643A1
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layer
magnetic field
magnetoresistive element
bus bar
ferromagnetic layer
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PCT/JP2015/065213
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English (en)
Japanese (ja)
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牛見　義光
米田　年麿
川浪　崇
島津　武仁
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株式会社村田製作所
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Definitions

  • the present invention relates to a magnetoresistive element, a magnetic sensor, and a current sensor.
  • an AMR (Anisotropic Magneto Resistance) element is known as a magnetoresistive effect element using an anisotropic magnetoresistive effect.
  • the AMR element has a ferromagnetic layer exhibiting an anisotropic magnetoresistance effect.
  • the anisotropic magnetoresistance effect is determined by the direction of current flowing through the magnetoresistive element, the magnetization direction of the ferromagnetic layer, and the like.
  • FIG. 16 is a diagram illustrating an example of the direction of current flowing through the magnetoresistive element and the magnetization direction of the ferromagnetic layer.
  • FIG. 17 is a diagram showing output characteristics of a general magnetoresistive element.
  • the electrical resistance of the magnetoresistive element is shown in FIG.
  • R0 is a constant value portion of the resistance
  • ⁇ R is the maximum value of the changing portion.
  • AMR elements are often used for magnetic heads and magnetic sensors of magnetic recording media.
  • the even function characteristic is converted into an odd function by applying a bias magnetic field to the ferromagnetic layer.
  • the change in magnetoresistance of the AMR element responds linearly to the external magnetic field.
  • the ferromagnetic layer of the AMR element has a large number of magnetic domains because it includes magnetizations having different directions. For this reason, when the magnetic field is changed, Barkhausen noise is generated when the domain wall moves so as to increase the magnetization.
  • As a method to suppress Barkhausen noise by controlling the magnetization direction of the ferromagnetic layer to make it a single domain for example, using an exchange coupling magnetic field generated by exchange coupling of the antiferromagnetic layer with the ferromagnetic layer A method to do this has been proposed.
  • Patent Document 1 JP-A-2006-41511
  • An AMR element disclosed in FIG. 2 of Patent Document 1 includes a substrate, a ferromagnetic layer provided on the substrate, an antiferromagnetic material provided on both ends of the ferromagnetic layer, and an antiferromagnetic material. And a pair of electrode portions provided on the ferromagnetic layer.
  • the antiferromagnetic layer is not provided in the central portion of the ferromagnetic layer, and the central portion of the ferromagnetic layer is exposed from the antiferromagnetic layer.
  • a magnetic bias is applied from the antiferromagnetic layer to the ferromagnetic layer, and the portion where the ferromagnetic layer and the antiferromagnetic layer are in contact (the pair of electrodes, the antiferromagnetic layer and the ferromagnetic layer are In the overlapping region), the ferromagnetic layer and the antiferromagnetic layer are exchange-coupled.
  • the AMR element disclosed in FIG. 3 of Patent Document 1 is provided on the ferromagnetic layer so as to cover the substrate, the ferromagnetic layer provided on the substrate, and the entire ferromagnetic layer.
  • An exchange coupling magnetic field adjustment layer and an antiferromagnetic material layer provided on the exchange coupling magnetic field adjustment layer so as to cover the entire exchange coupling magnetic field adjustment layer are provided.
  • the antiferromagnetic material layer and the ferromagnetic material layer are exchange coupled through the exchange coupling magnetic field adjustment layer.
  • an AMR element used for a magnetic head is designed to detect a weak magnetic field.
  • the ferromagnetic layer and the antiferromagnetic layer are exchanged only in a region where the pair of electrodes, the antiferromagnetic layer, and the ferromagnetic layer overlap each other. Join. For this reason, the linearly responsive region where the relationship between the detected magnetic field and the output of the AMR element is linear is narrowed.
  • the AMR element is There is a problem that it cannot be used because it will be magnetically saturated immediately.
  • the antiferromagnetic material layer of the AMR element described in Patent Document 1 is an alloy containing Mn, the electrical resistance is high, and a wasteful resistance component is inserted between the pair of electrodes and the ferromagnetic material layer. There is a problem that the magnetoresistance change rate of the element is lowered.
  • an antiferromagnetic layer 14 is formed over the entire surface of the ferromagnetic layer. Since the antiferromagnetic layer has a high electric resistance, a barber pole electrode is formed on the antiferromagnetic layer in order to form a linearly responding region by passing an electric current through the ferromagnetic layer in an oblique direction. Even if it exists, an electric current does not flow through a barber pole electrode, but mainly flows through a ferromagnetic layer. For this reason, in the AMR element disclosed in Patent Document 1, the direction of the current flowing through the ferromagnetic layer cannot be tilted by the barber pole electrode. As a result, there is a problem that a good linearly responding region cannot be formed.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a magnetoresistive element, a magnetic sensor, and a magnetic sensor that can expand a linearly responsive region while improving linearity of output. It is to provide a current sensor.
  • a magnetoresistive element according to the present invention is provided on the antiferromagnetic layer so as to cover the substrate, the antiferromagnetic layer provided above the substrate, and the entire main surface of the antiferromagnetic layer. And a plurality of barber pole electrodes provided apart from each other on the ferromagnetic layer.
  • the antiferromagnetic material layer includes an alloy containing any one element of Ni, Fe, Pd, Pt, and Ir and Mn, Pd, Pt, and Mn. It is preferable to be made of an alloy containing Ni or an alloy containing Cr, Pt and Mn.
  • the ferromagnetic layer is preferably made of an alloy containing Ni and Fe or an alloy containing Ni and Co.
  • the magnetoresistive element according to the present invention is provided between the antiferromagnetic material layer and the ferromagnetic material layer, and is generated between the antiferromagnetic material layer and the ferromagnetic material layer. It is preferable to further include an exchange coupling magnetic field adjustment layer for adjusting the magnitude of the exchange coupling magnetic field.
  • the exchange coupling magnetic field adjustment layer is preferably a ferromagnetic layer made of Co or an alloy containing Co.
  • the magnetic sensor based on this invention is equipped with the said magnetoresistive element.
  • a current sensor according to the present invention includes a bus bar through which a current to be measured flows and the magnetic sensor.
  • FIG. 1 is a schematic cross-sectional view of a magnetoresistive element according to a first embodiment. It is a top view which shows the positional relationship of the barber pole electrode with which the magnetoresistive element shown in FIG. 1 is equipped, and a laminated body.
  • FIG. 2 is a cross-sectional view schematically showing a state where the antiferromagnetic layer and the ferromagnetic layer shown in FIG. 1 are exchange coupled. It is a figure which shows the relationship between the magnetic resistance of the magnetoresistive element shown in FIG. 1, and a magnetic field. It is a top view of the magnetic sensor comprised using the magnetoresistive element shown in FIG.
  • FIG. 6 is a schematic cross-sectional view of a magnetoresistive element according to Embodiment 2.
  • FIG. It is a figure which shows the result of the composition analysis in the depth direction of the magnetoresistive element based on Example 2.
  • FIG. It is a figure which shows the relationship between the bridge voltage change rate of a magnetic sensor which comprises the magnetoresistive element based on Example 2, and a magnetic field.
  • FIG. 6 is a schematic diagram showing a current sensor according to a third embodiment.
  • FIG. 15 is a diagram schematically showing a generated magnetic field in the cross-sectional view seen from the direction of the arrow XV-XV shown in FIG. 14. It is a figure which shows an example of the direction of the electric current which flows through a magnetoresistive element, and the magnetization direction of a ferromagnetic material layer. It is a figure which shows the output characteristic of a general magnetoresistive element.
  • FIG. 1 is a schematic cross-sectional view of the magnetoresistive element according to the present embodiment.
  • FIG. 2 is a plan view showing the positional relationship between the barber pole electrode provided in the magnetoresistive element shown in FIG. 1 and the laminated body. With reference to FIG. 1 and FIG. 2, the magnetoresistive element 1 which concerns on this Embodiment is demonstrated.
  • the magnetoresistive element 1 includes a substrate 10, an insulating layer 11, a stacked body 12, a plurality of barber pole electrodes 17, a pair of electrodes 18, and a protective layer 19.
  • the substrate 10 for example, a silicon substrate is used. Further, as the substrate 10, an insulating substrate such as a glass substrate or a plastic substrate may be used. In this case, the insulating layer 11 can be omitted.
  • the insulating layer 11 is provided so as to cover the entire main surface of the substrate 10.
  • a silicon oxide film (SiO 2 film) or an aluminum oxide film (Al 2 O 3 ) is used for the insulating layer 11.
  • the insulating layer 11 can be formed by, for example, a CVD method or the like.
  • the laminated body 12 has a rectangular shape, for example.
  • the stacked body 12 is provided on the insulating layer 11.
  • the stacked body 12 includes an underlayer 13, an antiferromagnetic material layer 14, and a ferromagnetic material layer 15.
  • As the underlayer 13, a (111) plane parallel to the interface of one metal film made of a metal such as Ta, W, Mo, Cr, Ti, or Zr, or a face-centered cubic crystal and an antiferromagnetic material layer 14.
  • a metal film made of a metal or alloy in which is preferentially oriented for example, Ni, Au, Ag, Cu, Pt, Ni—Fe, Co—Fe, etc.
  • the underlayer 13 is provided for appropriately growing the crystal of the antiferromagnetic material layer 14.
  • the underlayer 13 can be omitted if the crystal of the antiferromagnetic material layer 14 can be grown appropriately.
  • the antiferromagnetic material layer 14 is provided above the substrate 10. Specifically, the antiferromagnetic material layer 14 is provided on the underlayer 13. When the underlayer 13 is omitted, the antiferromagnetic material layer 14 is provided on the insulating layer 11.
  • the antiferromagnetic material layer 14 includes an alloy containing any one element of Ni, Fe, Pd, Pt, and Ir and Mn, an alloy containing Pd, Pt, and Mn, or Cr, Pt, and Mn. It consists of an alloy containing Mn such as an alloy containing. Since these alloys have a high blocking temperature, the exchange coupling magnetic field does not disappear up to a high temperature. For this reason, the magnetoresistive element 1 can be operated stably.
  • An alloy containing Fe and Mn, an alloy containing Pt and Mn, an alloy containing Ir and Mn, and an alloy containing Cr, Pt and Mn are irregular alloys depending on the composition. No heat treatment (heat treatment for ordering the crystal structure) is required. For this reason, when these alloys are adopted as the antiferromagnetic material layer 14, the manufacturing process can be simplified.
  • the ferromagnetic layer 15 is provided on the antiferromagnetic layer 14 so as to cover the entire main surface of the antiferromagnetic layer 14.
  • the ferromagnetic layer 15 is made of a material that produces an anisotropic magnetoresistance effect, such as an alloy containing Ni and Fe or an alloy containing Ni and Co. Since an alloy containing Ni and Fe has a small coercive force, hysteresis can be reduced.
  • Ni 80 Fe 20 or an alloy containing Ni and Fe having a composition close to Ni 80 Fe 20 has a cubic crystal magnetic anisotropy of approximately 0 erg / cm 3 .
  • a material having a magnetocrystalline anisotropy of 0 erg / cm 3 is isotropic because it does not have an easy magnetization axis or a difficult magnetization axis due to magnetocrystalline anisotropy.
  • the magnetostriction is almost zero, so that the magnetic anisotropy induced magnetoelastically by the strain of the crystal is small.
  • an alloy including Ni and Fe can easily induce a macroscopic easy axis of magnetization throughout the thin film by heat treatment in a magnetic field, the direction of the easy axis of magnetization throughout the thin film is designed. It becomes easy.
  • a plurality of barber pole electrodes 17 are provided on the laminate 12. Specifically, the plurality of barber pole electrodes 17 are provided on the ferromagnetic layer 15 so as to be separated from each other. The plurality of barber pole electrodes 17 are provided so as to be inclined by 45 ° with respect to the longitudinal direction of the laminate 12. As the barber pole electrode 17, a metal having good electrical conductivity such as Al is used. In order to improve the adhesion between the barber pole electrode 17 and the ferromagnetic layer 15, an adhesion layer made of Ti or the like may be provided between the barber pole electrode 17 and the ferromagnetic layer 15.
  • the laminate 12 is provided so that the magnetization direction of the ferromagnetic layer 15 coincides with the longitudinal direction of the laminate 12 when there is no external magnetic field. Therefore, the angle at which the direction of the detection current I flowing between the two adjacent barber pole electrodes 17 in the shortest and the magnetization direction of the ferromagnetic layer 15 intersect is 45 °.
  • the magnetization direction of the ferromagnetic layer 15 is fixed in the longitudinal direction of the stacked body 12 by an exchange coupling magnetic field that acts from the antiferromagnetic layer 14.
  • the base layer 13 to the ferromagnetic layer 15 are formed by using a vacuum deposition method, a sputtering method, or the like. Subsequently, by performing heat treatment while applying a magnetic field, an exchange coupling magnetic field is obtained between the ferromagnetic layer 15 and the antiferromagnetic layer 14, and the magnetization direction of the ferromagnetic layer 15 is fixed in the direction of the magnetic field.
  • the underlayer 13 to the ferromagnetic layer 15 are formed using a vacuum deposition method, a sputtering method or the like while applying a magnetic field
  • the antiferromagnetic layer 14 is an irregular alloy
  • the magnetization of the ferromagnetic body 15 Since the direction is fixed in the direction of the magnetic field by the exchange coupling magnetic field between the ferromagnetic layer 15 and the antiferromagnetic layer 14, no heat treatment is required to cause exchange coupling.
  • heat treatment may be performed while applying a magnetic field in the same direction as the magnetic field applied during the formation.
  • the antiferromagnetic layer 14 is an ordered alloy
  • a heat treatment is performed while applying a magnetic field, thereby exchanging between the ferromagnetic layer 15 and the antiferromagnetic layer 14.
  • a coupled magnetic field is obtained, and the magnetization direction of the ferromagnetic layer 15 is fixed to the direction of the magnetic field.
  • the direction of the applied magnetic field is better to be the same direction as the magnetic field applied during formation.
  • the laminated body 12 is patterned into a rectangular shape so that the magnetization direction of the ferromagnetic layer 15 matches the longitudinal direction of the laminated body 12.
  • the pair of electrodes 18 are provided so as to sandwich a plurality of barber pole electrodes 17.
  • the pair of electrodes 18 are provided at both ends of the multilayer body 12 in the direction in which the plurality of barber pole electrodes 17 are arranged.
  • the pair of electrodes 18 are provided so as to cover the upper surface of the ferromagnetic layer 15, the side surface of the multilayer body 12 in the direction in which the barber pole electrodes 17 are arranged, and the end of the uppermost layer.
  • the electrode 18 is made of a metal material having good electrical conductivity such as Al.
  • an adhesion layer made of Ti or the like may be provided between the electrode 18 and the ferromagnetic layer 15.
  • the protective layer 19 is provided so as to cover the stacked body 12, the plurality of barber pole electrodes 17, and the pair of electrodes 18.
  • the protective layer 19 is provided with a contact hole 19a so that a part of the pair of electrodes 18 is exposed.
  • the protective layer 19 is made of, for example, a silicon oxide film (SiO 2 ), and is provided to prevent the ferromagnetic layer 15 and the like from being oxidized or corroded. Note that the protective layer 19 may not be provided.
  • FIG. 3 is a cross-sectional view schematically showing a state where the antiferromagnetic layer and the ferromagnetic layer shown in FIG. 1 are exchange coupled.
  • FIG. 3 a state where the antiferromagnetic material layer 14 and the ferromagnetic material layer 15 are exchange-coupled will be described.
  • an exchange coupling magnetic field acts on the entire ferromagnetic layer.
  • the magnetization direction of the ferromagnetic layer 15 can be aligned in one direction. That is, the ferromagnetic layer 15 can be made into a single magnetic domain.
  • the magnitude of the exchange coupling magnetic field can be adjusted by, for example, the film thickness of the ferromagnetic layer 15. By reducing the thickness of the ferromagnetic layer 15, the magnitude of the exchange coupling magnetic field is increased.
  • FIG. 4 is a diagram showing the relationship between the magnetic resistance and the magnetic field of the magnetoresistive element shown in FIG. With reference to FIG. 4, the relationship between the magnetic resistance of the magnetoresistive element 1 and a magnetic field is demonstrated.
  • the plurality of barber pole electrodes 17 are provided on the ferromagnetic layer 15. Since the electrical resistance of the ferromagnetic layer 15 is smaller than the electrical resistance of the antiferromagnetic layer 14, the detected current flowing from the electrode 18 on one end side toward the electrode 18 on the other end side is detected by the ferromagnetic layer 15 and the barber. It flows through the pole electrode 17. At this time, the direction of the detection current flowing through the ferromagnetic layer 15 can be reliably tilted in the direction connecting the adjacent barber pole electrodes 17 in the shortest distance.
  • the ferromagnetic layer 15 is provided on the antiferromagnetic layer 14 so as to cover the entire main surface of the antiferromagnetic layer 14, and the magnetization direction of the ferromagnetic layer 15 changes from the antiferromagnetic layer 14. Since it is fixed in one direction by the exchange coupling magnetic field, it is made into a single magnetic domain. Thereby, Barkhausen noise can be suppressed. Furthermore, in order to move the magnetization of the ferromagnetic layer 15 by the exchange coupling magnetic field from the antiferromagnetic layer 14, a larger magnetic field is required. Thereby, even when a large magnetic field is applied, the magnetoresistive element 1 is not magnetically saturated, and the region that responds linearly can be expanded.
  • FIG. 5 is a plan view of a magnetic sensor constituted by using a plurality of magnetoresistive elements shown in FIG. With reference to FIG. 5, a magnetic sensor 100 configured by using a plurality of magnetoresistive elements shown in FIG. 1 will be described.
  • the magnetic sensor 100 is provided by configuring a full bridge circuit using four magnetoresistive elements 1A, 1B, 1C, and 1D.
  • One end of the magnetoresistive element 1A is electrically connected to an electrode pad P1 for taking out the output voltage Vout2 through the wiring pattern 3A.
  • the other end side of the magnetoresistive element 1A is electrically connected to an electrode pad P3 for applying the power supply voltage Vcc via the wiring pattern 3B.
  • One end of the magnetoresistive element 1D is electrically connected to the electrode pad P1 through the wiring pattern 3A.
  • the other end side of the magnetoresistive element 1D is electrically connected to the electrode pad P4 connected to the ground via the wiring pattern 3D.
  • the one end side of the magnetoresistive element 1B is electrically connected to the electrode pad P2 for taking out the output voltage Vout1 through the wiring pattern 3C.
  • the other end of the magnetoresistive element 1B is electrically connected to the electrode pad P3 via the wiring pattern 3B.
  • One end of the magnetoresistive element 1C is electrically connected to the electrode pad P2 via the wiring pattern 3C.
  • the other end side of the magnetoresistive element 1C is connected to the electrode pad P4 via the wiring pattern 3D.
  • Magnetoresistive elements 1A, 1B, 1C, 1D are arranged so that their magnetization directions are parallel to each other.
  • the extending direction of the barber pole electrode in the magnetoresistive elements 1A and 1C intersects the extending direction of the barber pole electrode in the magnetoresistive elements 1B and 1D.
  • the extending directions of the barber pole electrodes in the magnetoresistive elements 1A and 1C are parallel to each other.
  • the barber pole electrodes in the magnetoresistive elements 1A and 1C are inclined so as to move away from the magnetoresistive elements 1D and 1B from the inside toward the outside.
  • the extending directions of the barber pole electrodes in the magnetoresistive elements 1B and 1D are parallel to each other.
  • the barber pole electrodes in the magnetoresistive elements 1B and 1D are inclined so as to be separated from the magnetoresistive elements 1C and 1A from the inside toward the outside.
  • the magnetoresistive elements 1A and 1D are connected in series via the wiring patterns 3B, 3A and 3D and the electrode pads P3, P1 and P4, thereby forming a first series circuit (half bridge circuit).
  • the magnetoresistive elements 1B and 1C are connected in series via the wiring patterns 3B, 3C and 3D and the electrode pads P3, P2 and P4, thereby forming a second series circuit (half bridge circuit).
  • the first series circuit (half-bridge circuit) and the second series circuit (half-bridge circuit) are connected in parallel via the electrode pads P3 and P4, thereby forming a full bridge circuit.
  • the magnetoresistive elements 1A and 1C have a positive output property, and the magnetoresistive elements 1B and 1D have a negative output property.
  • the output voltages Vout2 and Vout1 are extracted from the electrode pad P1 and the electrode pad P2 according to the magnetic field strength.
  • the output voltages Vout2 and Vout1 are differentially amplified through a differential amplifier (not shown).
  • output characteristics (relationship between the magnetoresistance change rate of the magnetoresistive element and the magnetic field) in the magnetic sensor 100 will be described below with reference to Comparative Example and Example 1.
  • FIG. 6 is a diagram showing the relationship between the magnetoresistance change rate of the magnetoresistive element and the magnetic field in the comparative example. With reference to FIG. 6, the relationship between the magnetoresistance change rate of the magnetoresistive element in a comparative example and a magnetic field is demonstrated.
  • the comparative example as a laminate, a laminate (Si / SiO 2 / Ta / Ni) in which an underlayer, a ferromagnetic layer, and an antiferromagnetic layer are sequentially laminated from the substrate side. -Fe / Fe-Mn).
  • the Si / SiO 2 described above is a substrate and an insulating layer and is not included in the stacked body. That is, in the comparative example, the stacking order of the antiferromagnetic layer and the ferromagnetic layer is reversed as compared with the magnetoresistive element 1 according to the first exemplary embodiment. For this reason, the barber pole electrode in the comparative example is provided on the antiferromagnetic material layer.
  • a Ta film is used as the underlayer
  • an alloy containing Ni and Fe is used as the ferromagnetic layer
  • an alloy containing Fe and Mn is used as the antiferromagnetic layer.
  • the magnetic sensor in the comparative example is provided so as to have the same configuration as the magnetic sensor 100 according to the first embodiment using the four magnetoresistive elements in the comparative example.
  • the change in magnetoresistance of each of the magnetoresistive elements 1A, 1B, 1C, and 1D confirmed based on the voltages output from the electrode pad P1 and the electrode pad P2 of the magnetic sensor by changing the intensity of the detected magnetic field.
  • the relationship between the rate and the magnetic field B is non-linear.
  • the barber pole electrode is provided on the antiferromagnetic layer having a higher electrical resistance than the ferromagnetic layer, the detection current does not flow through the barber pole electrode, and the ferromagnetic layer having a lower electrical resistance is mainly used. Flowing. For this reason, the direction of the detection current cannot be tilted by the barber pole electrode, and the magnetoresistance change cannot be linearly responded to the external magnetic field. Thereby, in the comparative example, the relationship between the magnetoresistance change rate of the magnetoresistive elements 1A, 1B, 1C, and 1D and the magnetic field B is nonlinear.
  • FIG. 7 is a diagram showing the relationship between the magnetoresistance change rate of the magnetoresistive element according to Example 1 and the magnetic field. With reference to FIG. 7, the relationship between the magnetoresistive change rate of the magnetoresistive element based on Example 1 and a magnetic field is demonstrated.
  • the laminated body 12 is formed by sequentially laminating the base layer 13, the antiferromagnetic layer 14, and the ferromagnetic layer 15 in this order from the substrate 10 side (Si / SiO 2 / Ta / Ni—Fe / Fe—Mn / Ni—Fe) is used.
  • the Si / SiO 2 described above is a substrate and an insulating layer and is not included in the laminate.
  • the magnetic sensor according to Example 1 has substantially the same configuration as the magnetic sensor according to Embodiment 1. For this reason, the barber pole electrode 17 according to the first embodiment is provided on the ferromagnetic layer 15.
  • Example 1 a laminated film 12 in which an alloy containing Ni and Fe is laminated on a Ta film is used as the underlayer 13, and an alloy containing Fe and Mn is used as the antiferromagnetic material layer 14. An alloy containing Ni and Fe is used as the ferromagnetic layer 15.
  • the magnetic sensor according to Example 1 is provided using the four magnetoresistive elements according to Example 1 so as to have the same configuration as the magnetic sensor 100 according to Embodiment 1.
  • the magnetoresistance of each magnetoresistive element 1A, 1B, 1C, 1D confirmed based on the voltage output from the electrode pad P1 and electrode pad P2 of the magnetic sensor by changing the strength of the detected magnetic field.
  • the relationship between the rate of change and the magnetic field B is linear.
  • the detection current flows through the ferromagnetic layer 15 and the barber pole electrode 17.
  • the barber pole electrode With an inclination of 45 ° with respect to the longitudinal direction of the laminate, the direction of the detection current I flowing between the two adjacent barber pole electrodes 17 and the magnetization M of the ferromagnetic layer 15 are reduced.
  • the angle at which the direction intersects can be 45 °.
  • the magnetoresistance change can be linearly responded to the external magnetic field.
  • Example 1 the relationship between the magnetoresistance change rate of the magnetoresistive elements 1A, 1B, 1C, and 1D and the magnetic field B is Become linear.
  • the magnetoresistive element 1 according to the present embodiment can expand the linearly responsive region while improving the linearity of the output.
  • FIG. 8 is a schematic cross-sectional view of the magnetoresistive element according to the present embodiment. With reference to FIG. 8, a magnetoresistive element 1E according to the present exemplary embodiment will be described.
  • the magnetoresistive element 1 ⁇ / b> E is different from the magnetoresistive element 1 according to Embodiment 1 in that it further includes an exchange coupling magnetic field adjustment layer 16. Other configurations are almost the same.
  • the exchange coupling magnetic field adjustment layer 16 is provided between the antiferromagnetic material layer 14 and the ferromagnetic material layer 15, and has a large exchange coupling magnetic field generated between the antiferromagnetic material layer 14 and the ferromagnetic material layer 15. Adjust the height.
  • the exchange coupling magnetic field adjustment layer 16 is a ferromagnetic layer made of, for example, Co or an alloy containing Co.
  • the exchange coupling magnetic field adjustment layer 16 is preferably provided on the antiferromagnetic material layer 14 so as to cover the entire main surface of the antiferromagnetic material layer 14.
  • the range of the linear response region can be adjusted. Thereby, the freedom degree of design of an input dynamic range can be enlarged.
  • the magnitude of the exchange coupling magnetic field generated between the exchange coupling magnetic field adjusting layer 16 and the antiferromagnetic layer 14 is such that the ferromagnetic layer 15 is laminated directly on the antiferromagnetic layer 14. It is preferable that the magnitude of the exchange coupling magnetic field generated between the magnetic layer 14 and the ferromagnetic layer 15 is larger. In this case, by providing the exchange coupling magnetic field adjustment layer 16, the magnitude of the exchange coupling magnetic field that acts on the ferromagnetic layer 15 from the antiferromagnetic layer 14 can be increased. Thereby, the range of the region which responds linearly can be expanded.
  • the exchange coupling magnetic field adjustment layer 16 made of Co or a ferromagnetic layer made of Co the Mn contained in the antiferromagnetic layer 14 is converted into the ferromagnetic layer 15 during the heat treatment in the manufacturing process. Can be prevented from diffusing. Thereby, the performance deterioration accompanying diffusion can be suppressed, the characteristics can be stabilized, and the reliability can be improved.
  • Example 2 and Example 3 the composition from the upper layer (surface layer) to the lower layer is analyzed using TEM-EDX for the cross section of the laminate along the lamination direction.
  • the protective layer is not provided on the stacked body 12, and in Example 3, the protective layer is provided on the stacked body 12.
  • the bridge voltage change rate is measured.
  • FIG. 9 is a diagram showing the results of composition analysis in the depth direction of the magnetoresistive element according to Example 2.
  • FIG. 10 is a diagram illustrating the relationship between the bridge voltage change rate and the magnetic field of the magnetic sensor including the magnetoresistive element according to the second embodiment. With reference to FIG. 9 and FIG. 10, the composition analysis result in the depth direction of the magnetoresistive element according to Example 2, and the relationship between the bridge voltage change rate and the magnetic field will be described.
  • a multilayer body (Si / SiO 2 / Ta / layer) in which an underlayer, an antiferromagnetic layer, and a ferromagnetic layer are sequentially laminated from the substrate 10 side.
  • Ni—Fe / Ni—Mn / Ni—Fe) is used as the substrate 10 side.
  • the Si / SiO 2 described above is a substrate and an insulating layer and is not included in the laminate.
  • a laminated film in which an alloy containing Ni and Fe is laminated on a Ta film is used as the underlayer 13.
  • An alloy containing Ni and Mn is used as the antiferromagnetic material layer 14.
  • An alloy containing Ni and Fe is used as the ferromagnetic layer 15.
  • the thickness of the Ta film is 2 nm, and the thickness of the alloy layer containing Ni and Fe is 5 nm.
  • the thickness of the alloy layer containing Ni and Mn is 40 nm.
  • the thickness of the alloy layer containing Ni and Fe as the ferromagnetic layer 15 is 30 nm.
  • no protective layer is provided on the laminate 12.
  • the peak of Mn is confirmed at a position where the depth from the surface layer of the multilayer body 12 is several nanometers.
  • the depth from the surface layer of the laminated body 12 is 10 nm to 30 nm
  • Fe and Ni that are elements constituting the ferromagnetic layer 15 are mainly confirmed.
  • the depth from the surface layer of the multilayer body 12 is 40 nm to 70 nm
  • Ni and Mn that are elements constituting the antiferromagnetic material layer 14 are mainly confirmed.
  • Fe and Ni which are elements constituting a part of the base layer 13 are mainly confirmed.
  • the bridge voltage change rate exhibits linearity in the range of ⁇ 6 [mT] to 6 [mT].
  • FIG. 11 is a diagram showing the result of composition analysis in the depth direction of the magnetoresistive element according to Example 3.
  • FIG. 12 is a diagram illustrating the relationship between the bridge voltage change rate and the magnetic field of the magnetic sensor including the magnetoresistive element according to the third embodiment. With reference to FIG. 11 and FIG. 12, the composition analysis result in the depth direction of the magnetoresistive element according to Example 3, and the relationship between the bridge voltage change rate and the magnetic field will be described.
  • the magnetoresistive element according to Example 3 As the stacked body 12, the base layer 13, the antiferromagnetic layer 14, the exchange coupling magnetic field adjustment layer 16, and the ferromagnetic layer 15 were stacked in this order from the substrate 10 side.
  • a laminated body Si / SiO 2 / Ta / Ni—Fe / Ni—Mn / Co—Fe / Ni—Fe) is used as the stacked body 12.
  • the Si / SiO 2 described above is a substrate and an insulating layer and is not included in the stacked body.
  • a laminated film in which an alloy containing Ni and Fe is laminated on a Ta film is used as the underlayer 13.
  • An alloy containing Ni and Mn is used as the antiferromagnetic material layer 14.
  • An alloy containing Ni and Fe is used as the ferromagnetic layer 15.
  • the thickness of the Ta film is 2 nm, and the thickness of the alloy layer containing Ni and Fe is 5 nm.
  • the thickness of the alloy layer containing Ni and Mn is 40 nm.
  • the thickness of the alloy layer containing Ni and Fe is 30 nm.
  • the depth from the surface layer (upper layer of the protective layer) of the laminate 12 provided with the protective layer 19 is several nm, Si which is an element constituting the protective layer 19 is confirmed.
  • Si which is an element constituting the protective layer 19
  • Fe and Ni which are elements constituting the ferromagnetic layer are mainly confirmed.
  • a peak of Co which is a kind of element constituting the exchange coupling magnetic field adjustment layer 16 is confirmed.
  • Ni and Mn which are elements constituting the antiferromagnetic material layer 14 are mainly confirmed.
  • Fe and Ni At a position where the depth from the upper layer of the protective layer 19 is approximately 80 nm, Fe and Ni that are elements constituting a part of the underlayer 13 are mainly confirmed.
  • the peak of Ta which is an element constituting a part of the underlayer 13 is mainly confirmed.
  • Si which is an element constituting the insulating layer 11, is mainly confirmed at a position of about 87 nm or more from the upper layer of the protective layer 19.
  • the diffusion of Mn from the antiferromagnetic layer 14 to the ferromagnetic layer 15 is suppressed as compared with the magnetoresistive element according to Example 2. ing. Since heat treatment is performed in the process before forming the protective layer 19, the presence or absence of the protective film does not affect the diffusion of Mn.
  • the change rate of the bridge voltage shows linearity in the range of ⁇ 10 [mT] to 10 [mT]. .
  • FIG. 13 is a diagram showing the relationship between the hysteresis and temperature of the magnetoresistive elements according to Example 2 and Example 3.
  • the hysteresis increases as the temperature decreases, and significantly increases on the low temperature side.
  • the hysteresis is small and the size hardly changes in the range of ⁇ 40 ° C. to 125 ° C.
  • the magnetoresistive element according to Example 3 has a smaller hysteresis particularly on the low temperature side than the magnetoresistive element according to Example 2. It is confirmed that the hysteresis on the low temperature side can be reduced by providing the exchange coupling magnetic field adjustment layer 16. Thus, by providing the exchange coupling magnetic field adjustment layer 16, resistance to environmental temperature can also be improved.
  • FIG. 14 is a schematic diagram showing a current sensor according to the present embodiment. A current sensor according to the present embodiment will be described with reference to FIG.
  • the current sensor 150 includes magnetic sensors 100A and 100B, a bus bar 110 through which a current to be measured flows, and a subtractor 130.
  • the magnetic sensors 100A and 100B have the same configuration as that of the magnetic sensor 100 according to Embodiment 1, and have an odd function input / output characteristic.
  • the magnetic sensors 100A and 100B detect the strength of the magnetic field generated by the current flowing through the bus bar 110, and output a signal corresponding to the strength of the magnetic field from the bridge circuit.
  • the subtractor 130 is a calculation unit that calculates a current value by subtracting the detection values of the magnetic sensor 100A and the magnetic sensor 100B.
  • the bus bar 110 includes a first bus bar part 111, a second bus bar part, and a third bus bar part 113 that are electrically connected in series.
  • the first bus bar portion 111 and the third bus bar portion 113 are spaced apart from each other and extend in parallel.
  • the first bus bar portion 111 and the third bus bar portion 113 are connected by the second bus bar portion.
  • the second bus bar portion includes a parallel portion 112 extending in parallel with a distance from each of the first bus bar portion 111 and the third bus bar portion 113.
  • the second bus bar portion includes a first connecting portion 114 that connects the other end of the first bus bar portion 111 and one end of the parallel portion 112 of the second bus bar portion, and the other end of the parallel portion 112 of the second bus bar portion.
  • 2nd connection part 115 which connects the one end of the 3rd bus-bar part 113 is included.
  • the first bus bar part 111, the parallel part 112 of the second bus bar part, and the third bus bar part 113 are arranged at equal intervals.
  • Each of the first bus bar portion 111, the parallel portion 112 of the second bus bar portion, and the third bus bar portion 113 has a rectangular parallelepiped shape.
  • the shape of each of the first bus bar portion 111, the parallel portion 112 of the second bus bar portion, and the third bus bar portion 113 is not limited to a rectangular parallelepiped shape, and may be, for example, a cylindrical shape.
  • the first connecting portion 114 of the second bus bar portion extends linearly in a side view and is orthogonal to each of the first bus bar portion 111 and the parallel portion 112 of the second bus bar portion.
  • the second connecting portion 115 of the second bus bar portion extends linearly in a side view and is orthogonal to each of the parallel portion 112 and the third bus bar portion 113 of the second bus bar portion.
  • Each of the 1st connection part 114 and the 2nd connection part 115 of a 2nd bus-bar part has a rectangular parallelepiped shape.
  • each shape of the 1st connection part 114 of the 2nd bus-bar part and the 2nd connection part 115 is not restricted to a rectangular parallelepiped shape, For example, a column shape may be sufficient.
  • the bus bar 110 has an S-shape when viewed from the side. By configuring the bus bar 110 with one bus bar member having a bent shape so as to be folded back, the bus bar 110 having a high mechanical strength and a symmetrical shape can be obtained.
  • the shape of the bus bar 110 is not limited to this.
  • the bus bar 110 is appropriately selected as long as the bus bar 110 has a shape including the first bus bar portion 111, the second bus bar portion, and the third bus bar portion 113 such as an E shape. be able to.
  • the bus bar 110 is made of, for example, aluminum. However, the material of the bus bar 110 is not limited to this, and may be a single metal such as silver or copper, or an alloy of these metals and other metals. The bus bar 110 may be subjected to a surface treatment.
  • the direction 211 in which the current flows through the first bus bar portion 111 and the direction 215 in which the current flows through the third bus bar portion 113 are the same.
  • the direction 211 in which current flows in the first bus bar part 111, the direction 215 in which current flows in the third bus bar part 113, and the direction 213 in which current flows in the parallel part 112 of the second bus bar part 113 are opposite.
  • the direction 212 in which the current flows through the first connecting portion 114 of the second bus bar portion is the same as the direction 214 in which the current flows through the second connecting portion 115 of the second bus bar portion.
  • the magnetic sensor 100A is located between the first bus bar portion 111 and the parallel portion 112 of the second bus bar portion facing each other.
  • the magnetic sensor 100B is located between the parallel portion 112 and the third bus bar portion 113 of the second bus bar portion facing each other.
  • the magnetic sensor 100A is in a direction orthogonal to the direction in which the first bus bar portion 111 and the third bus bar portion 113 are arranged, and in a direction orthogonal to the extending direction of the first bus bar portion 111 in FIG.
  • the detection axis is in the direction indicated by the arrow 101A.
  • the magnetic sensor 100B is in a direction orthogonal to the direction in which the first bus bar part 111 and the third bus bar part 113 are arranged, and in a direction orthogonal to the extending direction of the third bus bar part 113 in FIG. And has a detection axis in the direction indicated by arrow 101B.
  • the magnetic sensors 100A and 100B output a positive value when a magnetic field directed in one direction of the detection axis is detected, and are negative when a magnetic field directed in a direction opposite to the one direction of the detection axis is detected. It has an odd function input / output characteristic that outputs a value. That is, with respect to the strength of the magnetic field generated by the current flowing through the bus bar 110, the phase of the detection value of the magnetic sensor 100A and the phase of the detection value of the magnetic sensor 100B are opposite in phase.
  • the magnetic sensor 100 ⁇ / b> A is electrically connected to the subtractor 130 through the first connection wiring 141.
  • the magnetic sensor 100 ⁇ / b> B is electrically connected to the subtractor 130 through the second connection wiring 142.
  • the subtracter 130 calculates the value of the current flowing through the bus bar 110 by subtracting the detection value of the magnetic sensor 100A and the detection value of the magnetic sensor 100B.
  • the subtractor 130 is used as the calculation unit.
  • the calculation unit is not limited to this, and a differential amplifier or the like may be used.
  • FIG. 15 is a diagram schematically showing a generated magnetic field in a cross-sectional view of the current sensor 150 according to the present embodiment as viewed from the direction of arrows XV-XV in FIG.
  • the detection axis direction of the magnetic sensor 100A and the magnetic sensor 100B is shown as the X direction
  • the direction in which the first bus bar part 111, the parallel part 112 of the second bus bar part and the third bus bar part 113 are arranged is shown as the Y direction. Yes.
  • the extending direction of the parallel portion 112 of the second bus bar portion is the Z direction.
  • a magnetic field leftward in the figure is applied to the magnetic sensor 100A in the direction of the detection axis indicated by the arrow 101A.
  • a magnetic field facing right in the figure is applied to the magnetic sensor 100B in the direction of the detection axis indicated by the arrow 101B.
  • the strength of the magnetic field detected by the magnetic sensor 100A is a positive value
  • the strength of the magnetic field detected by the magnetic sensor 100B is a negative value.
  • the detection value of the magnetic sensor 100A and the detection value of the magnetic sensor 100B are transmitted to the subtractor 130.
  • the subtracter 130 subtracts the detection value of the magnetic sensor 100B from the detection value of the magnetic sensor 100A. As a result, the absolute value of the detection value of the magnetic sensor 100A and the absolute value of the detection value of the magnetic sensor 100B are added. From the addition result, the value of the current flowing through the bus bar 110 is calculated.
  • an adder or an addition amplifier may be used as the calculation unit in place of the subtractor 130 while the input / output characteristics of the magnetic sensor 100A and the magnetic sensor 100B have opposite polarities.
  • the first bus bar portion 111 and the third bus bar portion 113 are positioned symmetrically with respect to each other about the center point of the parallel portion 112 of the second bus bar portion in the cross section. .
  • the first bus bar portion 111 and the third bus bar portion 113 are positioned symmetrically with respect to each other about the center line of the parallel portion 112 of the second bus bar portion in the direction of the detection axis of the magnetic sensor 100A and the magnetic sensor 100B in the cross section. is doing.
  • the magnetic sensor 100A and the magnetic sensor 100B are located point-symmetrically with respect to the center point of the parallel portion 112 of the second bus bar portion in the cross section. In addition, the magnetic sensor 100A and the magnetic sensor 100B are positioned symmetrically with respect to each other about the center line of the parallel portion 112 of the second bus bar portion in the direction of the detection axis of the magnetic sensor 100A and the magnetic sensor 100B in the cross section.
  • the magnetic sensor 100A and the magnetic sensor 100B arranged symmetrically in this way show detection values that equally reflect the magnetic field generated by the current flowing through the bus bar 110. Therefore, the linearity between the strength of the magnetic field generated by the current flowing through the bus bar 110 and the value of the current flowing through the bus bar 110 calculated therefrom can be improved.
  • the magnetic sensor included in the current sensor 150 is configured by the magnetoresistive element according to the first embodiment
  • the present invention is not limited to this. You may be comprised by the magnetoresistive element which concerns on form 2.
  • the current sensor 150 can expand the linearly responsive region while improving the linearity of the output.

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Abstract

　L'invention concerne un élément (1) de réluctance, lequel comporte: un substrat (10); une couche antiferromagnétique (14) située au-dessus du substrat (10); une couche ferromagnétique (15) située sur la couche antiferromagnétique (14) de façon à recouvrir complètement la surface principale de cette dernière; et plusieurs électrodes (17) en forme de zébrures espacées les unes des autres et situées sur la couche ferromagnétique (15).
PCT/JP2015/065213 2014-05-30 2015-05-27 Élément de réluctance, capteur magnétique et capteur de courant WO2015182643A1 (fr)

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Cited By (2)

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WO2018006879A1 (fr) * 2016-07-08 2018-01-11 江苏多维科技有限公司 Résistance magnétique anisotrope et capteur de courant sans appareil de réglage et de réinitialisation
US20190120916A1 (en) * 2016-04-06 2019-04-25 MultoDimension Technology Co., Ltd. Anisotropic magnetoresistive (amr) sensor without set and reset device

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JP2002267692A (ja) * 2001-03-08 2002-09-18 Yazaki Corp 電流センサ
JP2006041511A (ja) * 1996-11-20 2006-02-09 Toshiba Corp 反強磁性体膜とそれを用いた交換結合膜、磁気抵抗効果素子および磁気装置
JP2009123818A (ja) * 2007-11-13 2009-06-04 Mitsubishi Electric Corp 磁気センサデバイスの製造方法
JP2010080008A (ja) * 2008-09-26 2010-04-08 Fujitsu Ltd 再生磁気ヘッド

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JP2006041511A (ja) * 1996-11-20 2006-02-09 Toshiba Corp 反強磁性体膜とそれを用いた交換結合膜、磁気抵抗効果素子および磁気装置
JP2002267692A (ja) * 2001-03-08 2002-09-18 Yazaki Corp 電流センサ
JP2009123818A (ja) * 2007-11-13 2009-06-04 Mitsubishi Electric Corp 磁気センサデバイスの製造方法
JP2010080008A (ja) * 2008-09-26 2010-04-08 Fujitsu Ltd 再生磁気ヘッド

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Publication number Priority date Publication date Assignee Title
US20190120916A1 (en) * 2016-04-06 2019-04-25 MultoDimension Technology Co., Ltd. Anisotropic magnetoresistive (amr) sensor without set and reset device
JP2019516094A (ja) * 2016-04-06 2019-06-13 江▲蘇▼多▲維▼科技有限公司Ｍｕｌｔｉｄｉｍｅｎｓｉｏｎ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．， Ｌｔｄ． セット／リセットデバイスのない異方性磁気抵抗（ａｍｒ）センサ
EP3441779A4 (fr) * 2016-04-06 2019-11-20 Multidimension Technology Co., Ltd. Capteur à magnétorésistance anisotrope (amr) ne nécessitant pas de dispositif de réglage/de remise à l'état initial
US11346901B2 (en) * 2016-04-06 2022-05-31 MultiDimension Technology Co., Ltd. Anisotropic magnetoresistive (AMR) sensor without set and reset device
WO2018006879A1 (fr) * 2016-07-08 2018-01-11 江苏多维科技有限公司 Résistance magnétique anisotrope et capteur de courant sans appareil de réglage et de réinitialisation

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