WO2015129699A1 - 貫通孔を有する絶縁基板 - Google Patents
貫通孔を有する絶縁基板 Download PDFInfo
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Abstract
Description
また、こういった基板は電子部品の低背化ニーズに対応するため薄板化が求められることから、高強度であることが必要である反面、電子部品実装後はダイシングにより個片化されることから、切削性の良さといった特性も求められる。
絶縁基板の厚さが25~300μmであり、貫通孔の径が20μm以上であり、絶縁基板がアルミナ焼結体からなり、アルミナ焼結体の相対密度が99.5%以上であり、平均粒径が2~50μmであることを特徴とする。
図1(a)、(c)に示すように、絶縁基板1には一方の主面1aと他方の主面1bとが設けられており、主面1aと1bとの間を貫通する貫通孔2が多数形成されている。
相対密度 (%)= 100(%) -気孔率(%)
すなわち、ハンドル基板の断面(接合面に対して垂直な断面)を鏡面研磨、サーマルエッチングし、結晶粒界を際立たせた後、光学顕微鏡写真(200倍)を撮影する。そして、ハンドル基板の厚さ方向(接合面に垂直な方向)に0.1mm、接合面に水平な方向に1.0mmの層状の視野を設定する。そして、各視野について、大きさ0.5μm以上の気孔の総面積を算出し、得られた気孔面積から視野面積比を算出し、気孔率とする。
(1) 多結晶セラミック焼結体の断面を鏡面研磨、サーマルエッチングして粒界を際立たせた後、顕微鏡写真(100~200倍)を撮影し、単位長さの直線が横切る粒子の数を数える。これを異なる3箇所について実施する。なお、単位長さは500μm~1000μmの範囲とする。
(2) 実施した3箇所の粒子の個数の平均をとる。
(3) 下記の式により、平均粒径を算出する。
[算出式]
D=(4/π)×(L/n)
[D:平均粒径、L:直線の単位長さ、n:3箇所の粒子の個数の平均]
D=(4/π)×[500/{(22+23+19)/3}]=29.9μmとなる。
好ましくは純度99.9%以上(更に好ましくは99.95%以上)の高純度アルミナ粉末に対して前述のような焼結助剤の粉末を添加する。このような高純度アルミナ粉末としては、大明化学工業株式会社製の高純度アルミナ粉体を例示できる。
図3を参照しつつ説明した手順に従って、本発明の絶縁基板を作製した。
具体的には、透光性アルミナセラミック製のブランク基板を作製する為、以下の成分を混合したスラリーを調製した。
(原料粉末)
・比表面積3.5~4.5m2/g、平均一次粒子径0.35~0.45μmのα-アルミナ粉末(アルミナ純度99.9%)
100質量部
・MgO(マグネシア) 250質量ppm
・ZrO2(ジルコニア) 400質量ppm
・Y2O3(イットリア) 15質量ppm
(分散媒)
・グルタル酸ジメチル 27質量部
・エチレングリコール 0.3質量部
(ゲル化剤)
・MDI樹脂 4質量部
(分散剤)
・高分子界面活性剤 3質量部
(触媒)
・N,N-ジメチルアミノヘキサノール 0.1質量部
絶縁破壊電圧: 測定平均 75kV/mm
絶縁基板1の厚さ: 150μm
貫通孔2の径W: 60μm
アルミナ純度: 99.9%
相対密度: 99.6%
平均粒径: 5μm
気孔率: 0.4%
抵抗率: 10E14 Ω・cm
貫通孔の間隔D: 500μm
貫通孔の個数: 3.2個/cm2
径10μm以上の気孔の密度: 0.0%
(ダイシング条件)
砥石回転数=30000rpm
砥石の送り速度=80mm/sec
砥石粒度=SD325(レジンボンド)
砥石幅=0.15mm
実施例1と同様にして絶縁基板を作製した。ただし、実施例1と異なり、成形時に貫通孔を形成しなかった。その代わりに、ブランク基板を粗研磨加工した後にレーザー加工によってブランク基板に貫通孔を形成し、その後に精密研磨加工を行った。
CO2レーザー(波長 10.6μm)
パルス(1000Hz- On time 5μs)
レーザーマスク径0.3mm
絶縁破壊電圧: 測定平均78kV/mm
絶縁基板1の厚さ: 150μm
貫通孔2の径W: 70μm
アルミナ純度: 99.9%
相対密度: 99.6%
平均粒径: 5μm
気孔率: 0.4%
抵抗率: 10E14 Ω・cm
貫通孔の間隔D: 500μm
貫通孔の個数: 3.2 個/cm2
径10μm以上の気孔の密度: 0.0%
得られた絶縁基板について、実施例1と同様の評価を行った
実施例2と同様の方法で基板を作製した。ただし、焼成温度を調整し、異なる平均粒径の基板を作製した。得られた基板について、実施例1と同様の評価を行った。
図3を参照しつつ説明した手順に従って、絶縁基板を作製した。
(原料粉末)
・α-アルミナ粉末(アルミナ純度 99.6%) 100質量部
・MgO(マグネシア) 100質量ppm
・Fe2O3 200質量ppm
・SiO2 150質量ppm
・CuO 100質量ppm
(分散媒)
・グルタル酸ジメチル 27質量部
・エチレングリコール 0.3質量部
(ゲル化剤)
・MDI樹脂 4質量部
(分散剤)
・高分子界面活性剤 3質量部
(触媒)
・N,N-ジメチルアミノヘキサノール 0.1質量部
実施例1と同様にして絶縁基板を作製した。ただし、アルミナ焼結体の性状および物性等は以下のとおりである。
アルミナ純度: 99.6%
平均粒径: 1μm
相対密度: 98%
気孔率: 2%
抵抗率: 10E14 Ω・cm
絶縁基板1の厚さ: 150μm
貫通孔2の径W: 70μm
貫通孔の間隔D: 500μm
貫通孔の個数: 35個/cm2
径10μm以上の気孔の密度: 1%
実施例2と同様の方法で基板を作製した。、ただし、用いるアルミナ原料、焼成温度の調整により異なるアルミナ純度、平均粒径の基板を作製した。得られた基板について、実施例1と同様の評価を行った。結果を表2に示した。
これら比較例の条件では、砥石の目詰まりが見られた。
比較例5では、絶縁基板を構成するアルミナ焼結体の平均粒径が大きいため、ダイシング後のクラック、チッピングが多かった。
Claims (5)
- 導体用の貫通孔が配列されている絶縁基板であって、前記絶縁基板の厚さが25~300μmであり、前記貫通孔の径が20μm~100μmであり、前記絶縁基板がアルミナ焼結体からなり、前記アルミナ焼結体の相対密度が99.5%以上であり、平均粒径が2~50μmであることを特徴とする、貫通孔を有する絶縁基板。
- 前記アルミナ焼結体の絶縁破壊電圧が50kV/mm以上であることを特徴とする、請求項1記載の絶縁基板。
- 前記アルミナ焼結体のアルミナ純度が99.9%以上であり、前記アルミナ焼結体に焼結助剤としてジルコニアが200~800質量ppm、マグネシアが150~300質量ppmおよびイットリアが10~30質量ppm添加されていることを特徴とする、請求項1または2記載の絶縁基板。
- 前記貫通孔がレーザー加工によって形成されていることを特徴とする、請求項1~3のいずれか一つの請求項に記載の絶縁基板。
- 前記アルミナ焼結体の成形時に前記貫通孔が成形されていることを特徴とする、請求項1~3のいずれか一つの請求項記載の絶縁基板。
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JP2015536337A JP5877933B1 (ja) | 2014-02-26 | 2015-02-24 | 貫通孔を有する絶縁基板 |
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KR20180121509A (ko) * | 2016-03-11 | 2018-11-07 | 엔지케이 인슐레이터 엘티디 | 접속 기판 |
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WO2019004091A1 (ja) * | 2017-06-29 | 2019-01-03 | 京セラ株式会社 | アルミナ基板およびこれを用いた抵抗器 |
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EP3113586A1 (en) | 2017-01-04 |
EP3113585A1 (en) | 2017-01-04 |
US9538653B2 (en) | 2017-01-03 |
KR20160124650A (ko) | 2016-10-28 |
JP5877933B1 (ja) | 2016-03-08 |
CN105191511A (zh) | 2015-12-23 |
WO2015129574A1 (ja) | 2015-09-03 |
KR20160124649A (ko) | 2016-10-28 |
TWI632836B (zh) | 2018-08-11 |
KR102250469B1 (ko) | 2021-05-12 |
US20150353428A1 (en) | 2015-12-10 |
CN105191511B (zh) | 2019-04-09 |
TW201547334A (zh) | 2015-12-16 |
JPWO2015129574A1 (ja) | 2017-03-30 |
US20160007461A1 (en) | 2016-01-07 |
JP5877932B1 (ja) | 2016-03-08 |
EP3113586A4 (en) | 2017-10-25 |
EP3113585B1 (en) | 2018-11-28 |
KR102250468B1 (ko) | 2021-05-12 |
CN105144851B (zh) | 2019-02-12 |
EP3113586B1 (en) | 2018-11-28 |
US9894763B2 (en) | 2018-02-13 |
TWI632124B (zh) | 2018-08-11 |
JPWO2015129699A1 (ja) | 2017-03-30 |
CN105144851A (zh) | 2015-12-09 |
EP3113585A4 (en) | 2017-10-25 |
TW201546019A (zh) | 2015-12-16 |
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