WO2015053193A1 - 接合構造および電子部材接合構造体 - Google Patents
接合構造および電子部材接合構造体 Download PDFInfo
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- WO2015053193A1 WO2015053193A1 PCT/JP2014/076570 JP2014076570W WO2015053193A1 WO 2015053193 A1 WO2015053193 A1 WO 2015053193A1 JP 2014076570 W JP2014076570 W JP 2014076570W WO 2015053193 A1 WO2015053193 A1 WO 2015053193A1
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- 238000005304 joining Methods 0.000 title claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 221
- 239000002184 metal Substances 0.000 claims abstract description 221
- 239000013078 crystal Substances 0.000 claims abstract description 111
- 229910052802 copper Inorganic materials 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 41
- 239000000919 ceramic Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 description 77
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 60
- 239000010419 fine particle Substances 0.000 description 46
- 238000000034 method Methods 0.000 description 34
- 238000010438 heat treatment Methods 0.000 description 33
- 239000004065 semiconductor Substances 0.000 description 29
- 238000005245 sintering Methods 0.000 description 29
- 239000006185 dispersion Substances 0.000 description 20
- 239000002245 particle Substances 0.000 description 19
- 238000004381 surface treatment Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 13
- 238000007747 plating Methods 0.000 description 13
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 12
- 229910000679 solder Inorganic materials 0.000 description 12
- 238000005422 blasting Methods 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 10
- 239000011324 bead Substances 0.000 description 10
- 239000000523 sample Substances 0.000 description 8
- 239000002609 medium Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 230000002265 prevention Effects 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- 239000011164 primary particle Substances 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000011817 metal compound particle Substances 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VCUFZILGIRCDQQ-KRWDZBQOSA-N N-[[(5S)-2-oxo-3-(2-oxo-3H-1,3-benzoxazol-6-yl)-1,3-oxazolidin-5-yl]methyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C1O[C@H](CN1C1=CC2=C(NC(O2)=O)C=C1)CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F VCUFZILGIRCDQQ-KRWDZBQOSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- ORTVZLZNOYNASJ-UPHRSURJSA-N (z)-but-2-ene-1,4-diol Chemical compound OC\C=C/CO ORTVZLZNOYNASJ-UPHRSURJSA-N 0.000 description 1
- ZWVMLYRJXORSEP-UHFFFAOYSA-N 1,2,6-Hexanetriol Chemical compound OCCCCC(O)CO ZWVMLYRJXORSEP-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical compound CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 1
- IHCCLXNEEPMSIO-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 IHCCLXNEEPMSIO-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910002064 alloy oxide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- -1 amine compound Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 1
- SFMJNHNUOVADRW-UHFFFAOYSA-N n-[5-[9-[4-(methanesulfonamido)phenyl]-2-oxobenzo[h][1,6]naphthyridin-1-yl]-2-methylphenyl]prop-2-enamide Chemical compound C1=C(NC(=O)C=C)C(C)=CC=C1N1C(=O)C=CC2=C1C1=CC(C=3C=CC(NS(C)(=O)=O)=CC=3)=CC=C1N=C2 SFMJNHNUOVADRW-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000011146 organic particle Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 235000013772 propylene glycol Nutrition 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/002—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature
- B22F7/004—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of porous nature comprising at least one non-porous part
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Definitions
- the present invention relates to a joining structure in which a metal porous body is joined to a metal member and an electronic member joining structure, and more particularly to a joining structure in the case where the metal member is a circuit board, a ceramic substrate, or a lead frame.
- Solder is generally used to connect a semiconductor element (so-called power semiconductor element) for controlling or supplying power to a circuit board, a ceramic substrate, or a wiring body such as a lead frame.
- a semiconductor element so-called power semiconductor element
- cream solder in which flux is added to solder powder to have an appropriate viscosity is mainly used.
- flux when flux is used, there is a possibility that the surface of the semiconductor element may be contaminated and a cleaning process is required.
- it has been required to use a lead-free solder material that does not contain lead in consideration of the environment.
- Sn-Ag-Cu solder is available as a cheaper solder material than Au-Sn solder, but there is a problem that the growth of intermetallic compounds due to thermal history leads to lower reliability.
- ACF anisotropic conductive film
- an Ag paste in which Ag particles are dispersed in a resin as another joining member that does not use solder.
- an Ag paste is applied as a joining member of a power semiconductor element, high thermal conductivity and high conductivity are required, and therefore it is necessary to increase the Ag content in the paste.
- the ratio of the resin that is easily elastically deformed decreases, so that the rigidity of the bonding layer after the curing treatment increases and the strain absorption capacity of the bonding layer decreases.
- a strain exceeding the strain absorption capability is applied to the bonding layer, there is a problem that a defect occurs in the contact interface between the electrode of the semiconductor element or the die pad and the Ag particle or in the connection material, and peeling occurs.
- the electrode of the semiconductor element or the electrode of the substrate contains Ni
- the bonding strength (adhesion) is low, the interface breaks due to external force during handling, and the required long-term reliability Therefore, noble metal plating needs to be applied to the electrode of the semiconductor element and the electrode of the substrate.
- precious metal plating is performed and bonded in this manner, there is a problem in that durability is reduced because thermal stress on the semiconductor chip due to a difference in thermal expansion between members increases.
- metal particles having an average particle diameter of 100 nm or less whose surface is coated with an organic material are supplied between the materials to be bonded, and the organic particles are decomposed by heating to perform bonding by sintering the metal particles.
- Patent Document 1 Japanese Patent Document 1
- an oxide layer containing oxygen is formed at the bonding interface of the materials to be bonded, and a bonding material including a metal compound particle having an average particle size of 1 nm to 50 ⁇ m and a reducing agent made of an organic substance is disposed at the bonding interface.
- a bonding material including a metal compound particle having an average particle size of 1 nm to 50 ⁇ m and a reducing agent made of an organic substance is disposed at the bonding interface.
- the layer is oxidized to generate an oxide layer with a thickness greater than the natural oxide film thickness. It is said that the organic matter can be discharged efficiently, thereby increasing the shear strength of the joint surface.
- An object of the present invention is to provide a joining structure and an electronic member joining structure capable of preventing the occurrence of cracks at a joint between a metal member and a metal porous body and realizing highly reliable joining. is there.
- a joining structure is a joining structure including a metal member and a metal porous body formed on the metal member, and the metal member includes at least one of the metal members.
- the average crystal grain size ds of the first outer layer is smaller than the average crystal grain size di of the first inner layer, and the average crystal grain size dp of the metal porous body is the average of the first outer layer. It is characterized by being smaller than or the same as the crystal grain size ds.
- the average crystal grain size ds and the average crystal grain size dp preferably satisfy 1 ⁇ ds / dp ⁇ 100.
- the average crystal grain size ds is preferably 0.2 ⁇ m or more and less than 10 ⁇ m.
- the average crystal grain size di is preferably 10 ⁇ m or more and less than 100 ⁇ m.
- the average crystal grain size dp is preferably 0.1 ⁇ m or more and 1 ⁇ m or less.
- the metal material constituting the metal member and the metal porous body is Cu or Cu alloy, Ag or Ag alloy.
- a metal plate is further provided on the metal porous body.
- the metal plate includes at least one main surface and a second outer layer formed on the metal porous body side, and is formed at a position farther from the metal porous body in the thickness direction than the second outer layer. It is preferable that an average crystal grain size ds ′ in the second outer layer is smaller than an average crystal grain size di ′ in the second inner layer.
- the metal member is a lead frame base material.
- An electronic member connection structure is an electronic member connection structure including a ceramic substrate, a metal porous body formed on the ceramic substrate, and an electronic member disposed on the metal porous body.
- the ceramic substrate includes a ceramic body and a metal layer formed on the ceramic body, and the metal layer includes at least one main surface and is formed on the metal porous body side.
- the average crystal grain size dp of the metal porous body is smaller than or equal to the average crystal grain size ds of the outer layer.
- an electrode layer composed of one or more of Au, Ag, Cu, Pd, and Pt between the metal porous body and the electronic member.
- the joint structure of the present invention since the yield strain continuously changes in the thickness direction of the laminate, strain concentration is suppressed, and a crack occurrence point is difficult to be formed when repeated strain is added.
- the crystal grain size of the inner layer of the metal member is large, the overall strain relaxation effect is large. Therefore, it is possible to prevent the occurrence of cracks at the joint portion between the metal member and the metal porous body, and realize a highly reliable joint.
- FIG. 1 is a cross-sectional view schematically showing a bonding structure according to this embodiment.
- the joint structure of the present embodiment includes a metal member 1 and a metal porous body 2 formed on one main surface of the metal member 1.
- a semiconductor chip 10 is disposed on the metal porous body 2.
- the metal member 1 will not be specifically limited if it is a member containing a metal,
- board substrates, such as a circuit board and a lead frame, a connector material, etc. are mentioned.
- the metal material constituting the metal member is preferably Cu or Cu alloy or Ag or Ag alloy.
- a DBC (Direct Bonding Copper) board or an AMC (Active-metal brazed copper) board in which a copper plate is bonded to a ceramic board can be used.
- alumina (Al 2 O 3 ) can be used for the DBC substrate ceramic, and silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), or the like can be used for the AMC substrate ceramic.
- the metal porous body 2 is formed by sintering a metal fine particle dispersion containing metal fine particles and an organic dispersion medium.
- the metal fine particles include fine particles composed of one kind of metal selected from a metal element group consisting of Cu, Ag, Au, Al, Ni, Pt, Sn, Sb and Pd, and two or more metals selected from the metal element group.
- the metal fine particles may be fine particles made of the metal oxide or fine particles made of the alloy oxide, and the oxidation may be part of the fine particles.
- the average particle size (average particle size of primary particles) of the metal fine particles is preferably 5 nm or more and 200 nm or less.
- the average particle diameter of the primary particles means the average of the diameters of the primary particles that are individual metal fine particles constituting the secondary particles.
- the primary particle diameter can be measured using an electron microscope.
- the average particle size means the number average particle size of primary particles.
- the organic dispersion medium is preferably a polyhydric alcohol, more preferably one or two or more polyols having two or more hydroxyl groups in the molecule.
- ethylene glycol diethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, 1,3-butanediol, 1,4-butanediol, 2-butene-1 , 4-diol, 1,2,6-hexanetriol, glycerin, and 2-methyl-2,4-pentanediol, or two or more thereof.
- the metal fine particle dispersion can appropriately contain a dispersion auxiliary substance and a solvent.
- a dispersion auxiliary substance known substances can be used as appropriate.
- FIG. 2 is an enlarged schematic cross-sectional view for explaining the bonding structure according to the present embodiment.
- the metal member 1 includes one main surface 1 a, an outer layer 1 b formed on the metal porous body 2 side, and a distance from the metal porous body 2 in the thickness direction than the outer layer 1 b.
- the inner layer 1c formed at the other position (including the other main surface).
- the boundary between the outer layer 1b and the inner layer 1c is indicated by a broken line, but in reality, a certain degree of unevenness is formed at the boundary.
- the average crystal grain size ds of the outer layer 1b is smaller than the average crystal grain size di of the inner layer 1c, and the average crystal grain size dp of the metal porous body 2 is larger than the average crystal grain size ds of the outer layer 1b. Small or the same (dp ⁇ ds ⁇ di).
- the average crystal grain size ds and the average crystal grain size dp are expressed by the following formula 1 ⁇ ds / dp ⁇ 100. It is preferable to satisfy.
- the average crystal grain size ds of the outer layer 1b is smaller than the average crystal grain size di of the inner layer 1c, and the average crystal grain size dp of the metal porous body 2 is smaller than or equal to the average crystal grain size ds of the outer layer 1b.
- the yield strain changes continuously, the strain concentration is suppressed, and it is difficult to form a crack generation point when repeated strain is applied.
- the average crystal grain size di of the inner layer 1c is large, the overall strain relaxation effect is large.
- ds / dp ⁇ 100 the average crystal grain size dp of the metal porous body 2 is not too small than the average crystal grain size ds of the outer layer 1b, and the yield strain is likely to change continuously. Concentration is suppressed, and it is difficult to form crack generation points when repeated strain is applied.
- the average crystal grain size ds of the outer layer 1b is preferably 0.2 ⁇ m or more and less than 10 ⁇ m. If the average crystal grain size ds is less than 0.2 ⁇ m, the yield strain increases, so that stress concentrates on the interface (main surface 1a) between the metal porous body 2 and the outer layer 1b, and cracks are likely to occur. On the other hand, if the average crystal grain size ds is 10 ⁇ m or more, the average crystal grain size ds of the outer layer 1b is too large compared to the average crystal grain size dp of the metal porous body 2, so A continuous yield strain does not occur at the interface of the layer 1b, and cracks are likely to occur when repeated strain is applied.
- the thickness of the outer layer 1b is not particularly limited, but is preferably 0.5 ⁇ m or more and 10 ⁇ m or less.
- the average crystal grain size di of the inner layer 1c is preferably 10 ⁇ m or more and less than 100 ⁇ m. When the average crystal grain size di is less than 10 ⁇ m, the strain relaxation effect in the entire metal porous body 2 and the metal member 1 is reduced. On the other hand, if the average crystal grain size di is 100 ⁇ m or more, the average crystal grain size di of the inner layer 1c is too large compared to the average crystal grain size ds of the outer layer 1b. In other words, cracks are likely to occur when repeated strain is applied.
- the average crystal grain size dp of the metal porous body 2 is preferably 0.1 ⁇ m or more and 1 ⁇ m or less.
- the metal porous body 2 is not sufficiently sintered, and the adhesion between the metal particles tends to be weak.
- the average crystal grain size dp exceeds 1 ⁇ m, the metal diffusion of the metal fine particles is progressing, so that the fine pores in the metal porous body 2 are reduced and the rigidity of the entire metal porous body 2 is increased.
- the stress load to the electronic member (for example, semiconductor chip) which is a connection body will increase.
- the metal material which comprises the metal porous body 2 is Ag or Ag alloy, the average crystal grain diameter dp of the metal porous body 2 may exceed 1 micrometer.
- a process of forming the outer layer 1b on the main surface 1a of the metal member 1 is performed.
- the formation of the outer layer 1b causes atomic vacancies and / or dislocations on the surface of the metal member 1, and is preferably performed by mechanical processing such as polishing by blasting or buffing.
- examples of the abrasive include glass beads, alumina beads, and zirconia beads.
- the shape of the abrasive is not particularly limited, but is, for example, spherical or polygonal.
- the thickness of the outer layer 1b is not particularly limited, but is preferably 0.5 ⁇ m or more and 10 ⁇ m or less.
- the surface roughness Ra of the outer layer 1b is not particularly limited, but is preferably 0.1 ⁇ m or more and 2.0 ⁇ m or less.
- heat treatment may be performed before the process of forming the outer layer 1b on the main surface 1a of the metal member 1.
- the heat treatment condition is preferably about 300 to 400 ° C. and within one hour.
- the metal fine particle dispersion is applied to the metal member 1 and preliminarily dried by heating at 100 to 150 ° C. for 5 to 20 minutes.
- the semiconductor chip 10 is placed on the metal member on which the metal fine particles are placed.
- the laminated body in which the metal member 1, the metal porous body 2, and the semiconductor chip 10 are mounted in this order is set in a sintering apparatus as shown in FIG.
- FIGS. 3A to 3C are views showing a method for forming the joint structure according to the present embodiment.
- a layup press plate 22 is placed on a lower heating plate 21 of the sintering apparatus 20, and a laminate 23 is placed thereon.
- the press plate 22 is a plate made of Teflon (registered trademark), polyimide, 42 alloy, or the like. Note that the lay-up press plates may be placed above and below the laminate 23.
- the inert atmosphere is an atmosphere filled with an inert gas such as nitrogen or a vacuum atmosphere.
- the laminated body 23 is pinched
- the sintering temperature is preferably 150 ° C. or higher and 400 ° C. or lower.
- the pressure during sintering is preferably 5 MPa or more and 20 MPa or less, and the sintering time is preferably more than 0 minutes and less than 20 minutes.
- the shorter the sintering time the smaller the average crystal grain size ds of the outer layer 1b in the metal member 1 than the average crystal grain size di of the inner layer 1c, and the average crystal grain size dp of the metal porous body. It is more preferable that it is 15 minutes or less.
- the metal fine particles in the laminate 23 are sintered, and the metal porous body 2 is formed between the metal member 1 and the semiconductor chip 10.
- heat treatment may be further performed.
- diffusion bonding is promoted.
- the heat treatment conditions are preferably about 300 to 500 ° C. and about 30 minutes to 1 hour.
- the crystal grain size grows by promoting recrystallization.
- the average crystal grain size ds of the outer layer 1b in the metal member 1 is smaller than the average crystal grain size di of the inner layer 1c, and the average of the metal porous body 2
- the crystal grain size dp is smaller than or equal to the average crystal grain size ds of the outer layer 1b.
- the metal porous body 2 is formed on one main surface 1 a of the metal member 1, but the metal porous body may be formed on both main surfaces of the metal member 1.
- the bonding structure shown in FIG. 4A includes a metal member 1, a metal porous body 2 formed on one main surface of the metal member 1, and a semiconductor chip formed on the metal porous body 2. 10 and a metal porous body 3 formed on the other main surface of the metal member 1.
- the metal member 1 has a first outer layer including a main surface on the metal porous body 2 side and a second outer layer including a main surface on the metal porous body 3 side. And it has the 1st inner layer formed between these 1st outer layers and the 2nd outer layers.
- the average crystal grain size ds 12 of the first outer layer of the metal member 1 is smaller than the average crystal grain size di 1 of the first inner layer of the metal member 1, and the average crystal grain size dp 2 of the metal porous body 2 is It is smaller than or the same as the average crystal grain size ds 12 of the first outer layer of the metal member 1 (dp 2 ⁇ ds 12 ⁇ di 1 ).
- the average crystal grain size ds 13 of the second outer layer of the metal member 1 is smaller than the average crystal grain size di 1 of the first inner layer of the metal member 1 (ds 13 ⁇ di 1 ).
- mechanical processing such as blasting is performed on both main surfaces of the metal member 1. According to the configuration of FIG. 4A, it is possible to suppress the occurrence of cracks at the joints formed on both surfaces of the metal member 1.
- the thick copper plate 4B has a first outer layer including a main surface on the metal porous body 5 side and a second outer layer including a main surface on the metal porous body 6 side. And it has the 1st inner layer formed between these 1st outer layers and the 2nd outer layers.
- the average crystal grain size ds 45 of the first outer layer of the thick copper plate 4 is smaller than the average crystal grain size di 4 of the first inner layer of the thick copper plate 4, and the average crystal grain size dp 5 of the metal porous body 5 is It is smaller than or the same as the average crystal grain size ds 45 of the first outer layer (dp 5 ⁇ ds 45 ⁇ di 4 ).
- the average crystal grain size ds 46 of the second outer layer of the thick copper plate 4 is smaller than the average crystal grain size di 4 of the first inner layer of the thick copper plate 4, and the average crystal grain size dp 6 of the metal porous body 6. Is smaller than or equal to the average crystal grain size ds 46 of the second outer layer of the thick copper plate 4 (dp 6 ⁇ ds 46 ⁇ di 4 ).
- the copper plate 7 is a third outer layer including the main surface on the metal porous body 6 side, and a position farther from the metal porous body 6 in the thickness direction than the third outer layer, and is formed on the ceramic plate 8 side. And a third inner layer.
- the average crystal grain size ds 76 of the third outer layer of the copper plate 7 is smaller than the average crystal grain size di 7 of the third inner layer of the copper plate 7, and the average crystal grain size dp 6 of the metal porous body 6 is It is smaller than or the same as the average grain size ds 76 of the third outer layer of the copper plate 7 (dp 6 ⁇ ds 76 ⁇ di 7 ).
- An electrode layer (not shown) may be provided between the metal porous bodies 2 and 5 and the semiconductor chip 10.
- the electrode layer is composed of, for example, one or more of Au, Ag, Cu, Pd, and Pt.
- (1) Raw material (a) Semiconductor chip The size of the semiconductor chip is 7 mm ⁇ 7 mm, the thickness is 230 ⁇ m, and its joint surface is metallized with a Ni—Ti—Au alloy. The material is SiC. (B) Metal fine particle dispersion Copper fine particle dispersion: A copper fine particle dispersion in which copper fine particles are dispersed at a Cu concentration of 80% by mass in diethylene glycol was used. The copper fine particle dispersion contains 0.3% by mass of polyvinyl pyrrolidone as a polymer dispersant.
- Silver fine particle dispersion A silver fine particle dispersion (silver nanopaste, manufactured by DOWA Metaltech Co., Ltd.) in which silver fine particles are dispersed in octanediol at an Ag concentration of 89% by mass was used.
- C Metal member (metal substrate)
- I Ceramic substrate (DBC) A DBC substrate (Cu / Al 2 O 3 (alumina) / Cu) manufactured by Nippon Steel & Sumikin Electrodevices was used.
- Cu plate thickness 0.3 mm / ceramic plate thickness: 0.32 mm / Cu plate thickness: 0.3 mm.
- a copper foil having a thickness of 0.1 mm was heat-treated at 500 ° C. for 1 hour, and then a thick copper plate 4 having a plating layer of 0.1 mm formed on both surfaces of the copper foil under the following plating conditions was formed.
- After cleaning one copper plate 7 surface of the DBC substrate it was processed at a processing speed of 10 mm / sec at a pressure of 0.20 MPa by a wet blasting (WB) method using an alumina bead medium having a particle diameter of 40 ⁇ m.
- WB wet blasting
- the copper fine particle dispersion was applied to the surface treated with WB so as to have a thickness of 100 ⁇ m, and dried at 110 ° C. for 15 minutes. Furthermore, after mounting the copper foil with a plating layer which formed the plating layer on both surfaces of copper foil on the dried copper fine particle dispersion, it set to the sintering apparatus. Sintering was performed under a reduced pressure atmosphere (oxygen concentration of 1000 ppm or less) at 300 ° C. and a pressure of 10 MPa for 15 minutes to form a metal porous body 6 between the thick copper plate 4 and the copper plate 7 of the DBC substrate.
- a reduced pressure atmosphere oxygen concentration of 1000 ppm or less
- Plating solution CuSO 4 .5H 2 O 250 g / L (water), H 2 SO 4 50 g / L (water), NaCl 0.1 g / L (water) Current density: 5 A / dm 2 , temperature 40 ° C.
- the sample was set in TEM (JEM3010 manufactured by JEOL Ltd.), a TEM image was obtained under the conditions of an acceleration voltage of 200 KV and 5000 times, and the crystal grain size of the metal porous body was confirmed.
- TEM JEM3010 manufactured by JEOL Ltd.
- a straight line (a) is drawn at the center of the metal porous body in the thickness direction using TEM (JEM3010 manufactured by JEOL Ltd.), and about 20 crystals existing on the straight line (a) (long diameter + The average value of the minor axis) / 2 was calculated.
- the straight line (a) was drawn as follows.
- a straight line (d) was drawn at the center in the thickness direction of the metal member, and an average value of (major axis + minor axis) / 2 was calculated for 20 crystals existing on the straight line (d).
- the straight line (d) was drawn as follows. First, at the interface between the metal substrate and the metal porous body, two arbitrary points were selected such that the linear distance was the thickness of the metal member, and a straight line (e) connecting these two points was drawn. Next, a straight line (d) which is a straight line parallel to the straight line (e) is drawn at a position separated from the straight line (e) in the thickness direction of the metal member by half the thickness of the metal member (FIG. 5). .
- TCT Thermal shock test
- the average number of cycles was 1000 or more, “ ⁇ ”, and less than 1000, “ ⁇ ”. In the case where the metal member is a lead frame material, the average number of cycles is 500 or more, and “X” is less than 500.
- Example 1-1 After cleaning the copper plate surface of the DBC substrate, it was processed at a pressure of 0.20 MPa and a processing speed of 20 mm / sec by a wet blasting (WB) method using an alumina bead medium having a particle diameter of 14 ⁇ m. Next, the copper fine particle dispersion was applied to a thickness of 100 ⁇ m and dried at 110 ° C. for 15 minutes. After mounting the semiconductor chip, it was set in a sintering apparatus. Sintering was performed in a reduced pressure atmosphere (oxygen concentration of 1000 ppm or less) at 300 ° C. and a pressure of 10 MPa for 15 minutes.
- a reduced pressure atmosphere oxygen concentration of 1000 ppm or less
- Example 1-1 it was carried out in the same manner except that further heat treatment was performed after sintering. The heat treatment was performed at 500 ° C. for 30 minutes.
- Example 1-3 the same method was used except that the surface treatment conditions were changed. Specifically, the surface treatment was performed by a wet blasting (WB) method using an alumina bead medium having a particle diameter of 40 ⁇ m at a pressure of 0.20 MPa and a treatment speed of 10 mm / sec.
- WB wet blasting
- Example 1-4 In Example 1-2, instead of the DBC substrate, a substrate in which a Ni / Cr / Cu thin film layer and a plating layer were formed on a ceramic plate by sputtering was used, and heat treatment was performed before the surface treatment. It was carried out by the method. The heat treatment was performed at 400 ° C. for 30 minutes. [Example 1-5] In Example 1-3, the same process was performed except that the heat treatment was further performed after sintering. The heat treatment was performed at 500 ° C. for 30 minutes. [Example 1-6] In Example 1-4, the surface treatment conditions were changed, and the same method was carried out except that no further heat treatment was performed after sintering.
- Example 1-7 the same method was used except that the surface treatment conditions were changed. Specifically, the surface treatment was performed by a wet blasting (WB) method using an alumina bead medium having a particle diameter of 7 ⁇ m at a pressure of 0.2 MPa and a treatment speed of 20 mm / sec.
- Example 1-8 In Example 1-4, the same process was performed except that the heat treatment before the surface treatment was performed at 400 ° C. for 15 minutes.
- Example 1-9 In Example 1-1, the same method was used except that instead of the DBC substrate, a substrate in which a Ni / Cr / Cu thin film layer and a plating layer were formed on a ceramic plate by sputtering was used. [Example 1-10] In Example 1-1, the same method was used except that sintering was performed at 250 ° C. [Example 1-11] In Example 1-2, the same method was used except that the heat treatment was performed before the surface treatment. The heat treatment was performed at 400 ° C. for 1 hour. [Example 1-12] In Example 1-3, the same process was performed except that the heat treatment was further performed after sintering. The heat treatment was performed at 500 ° C. for 30 minutes.
- Example 1-13 In Example 1-6, sintering was performed at 200 ° C., and the same method was performed except that further heat treatment was performed after sintering. The heat treatment was performed at 500 ° C. for 30 minutes. [Example 1-14] In Example 1-12, the same method was used except that sintering was performed at 200 ° C. [Example 1-15] In Example 1-13, the heat treatment was not performed before the surface treatment, and the same method was performed except that the sintering was performed at 250 ° C. [Example 1-16] In Example 1-11, the same method was used except that the surface treatment conditions were changed and sintering was performed at 200 ° C.
- the surface treatment was performed by a wet blasting (WB) method using an alumina bead medium having a particle diameter of 40 ⁇ m at a pressure of 0.2 MPa and a treatment speed of 20 mm / sec.
- WB wet blasting
- Example 1-1 the same method was used except that the surface treatment was not performed.
- Example 1-2 the same method was used except that the surface treatment was changed from the WB treatment to the plasma treatment.
- the DBC substrate was set in a chamber of a sputtering apparatus and evacuated. And Ar gas was introduce
- Example 1-10 By supplying electric power from an RF power source, Ar plasma was generated near the copper plate surface of the DBC substrate, and the copper plate surface was irradiated.
- the input power condition of this RF power source was 0.25 W / cm 2 and the irradiation time was 5 minutes.
- Example 1-10 In Example 1-10, the same procedure was followed except that a further heat treatment was performed after sintering. The heat treatment was performed at 500 ° C. for 30 minutes.
- Example 2-1 to Example 2-16 The same method as in Examples 1-1 to 1-16 was performed except that the metal member was changed from the ceramic substrate to the lead frame material. [Comparative Example 2-1] In Example 2-2, the same process was performed except that the surface treatment was not performed. [Comparative Example 2-2] In Example 2-1, the same method was used except that the surface treatment was changed from the WB treatment to the plasma treatment. The plasma treatment was performed in the same manner as in Comparative Example 1-2.
- Example 3-1 to Example 3-16 A thick copper plate laminated DBC substrate in which a thick copper plate (metal member) was connected to a ceramic substrate via a sintered body was used. Surface treatment and heat treatment are performed on both the upper and lower surfaces of the thick copper plate of the thick copper plate laminated DBC substrate in the same manner as in Example 1-1 to Example 1-16, and the semiconductor chip is thickened through the metal porous body. Mounted on a copper plate. [Example 3-17] In Example 3-1, the surface treatment was performed only on the surface of the thick copper plate on the semiconductor chip side without performing the surface treatment on the surface of the thick copper plate on the metal porous body side of the thick copper plate laminated DBC substrate. Except for the above, the same method was used.
- Example 4-1 to Example 4-16 In Example 1-1 to Example 1-16, the copper fine particle dispersion was changed to a silver fine particle dispersion, and the sintering was performed in an air atmosphere in the same manner. [Comparative Examples 4-1 to 4-3] In Comparative Examples 1-1 to 1-3, the copper fine particle dispersion was changed to a silver fine particle dispersion, and the sintering was performed in an air atmosphere in the same manner.
- the average number of cycles in TCT was 1000 or more, and it was found that cracking prevention properties were good.
- the average number of cycles in TCT was all 1500 or more, and it was found that cracking prevention properties were particularly excellent.
- Comparative Example 1-1 and Comparative Example 1-2 in which the crystal grain size of the outer layer and the crystal grain size of the inner layer were the same, the average number of cycles in TCT was as small as 600 and 580.
- Comparative Example 1-3 in which the crystal grain size of the outer layer was larger than the crystal grain size of the inner layer, the average number of cycles in TCT was 510, which was very small.
- the average number of cycles in TCT was all 600 or more, and it was found that cracking prevention properties were good.
- the average number of cycles in TCT was all 650 or more, and it was found that cracking prevention properties were particularly excellent.
- Comparative Examples 2-1 and 2-2 in which the crystal grain size of the outer layer and the crystal grain size of the inner layer are the same, the average number of cycles in TCT was as small as 330 and 410.
- the average number of cycles in TCT was 1000 or more, and it was found that cracking prevention properties were good.
- the average number of cycles in TCT was all 2,000 or more, and it was found that crack generation prevention properties were extremely excellent.
- the average number of cycles in TCT was all 1000 or more, and it was found that crack generation was excellent.
- Comparative Examples 4-1 and 4-2 in which the crystal grain size of the outer layer and the crystal grain size of the inner layer were the same, the average number of cycles in TCT was as small as 590 and 530.
- Comparative Example 4-3 in which the crystal grain size of the outer layer was larger than the crystal grain size of the inner layer, the average number of cycles in TCT was as very small as 500.
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Abstract
Description
図1は、本実施形態に係る接合構造を概略的に示す断面図である。図1に示すように、本実施形態の接合構造は、金属部材1と、金属部材1の一方の主面上に形成された金属多孔質体2とを有する。金属多孔質体2上には、半導体チップ10が配置されている。
1≦ds/dp<100
を満たすことが好ましい。外部層1bの平均結晶粒径dsが内部層1cの平均結晶粒径diよりも小さく、金属多孔質体2の平均結晶粒径dpが外部層1bの平均結晶粒径dsよりも小さい又は同じであることにより、連続的に降伏歪が変化するため歪集中が抑制され、繰り返し歪付加時のクラック発生点が形成し難い。また、内部層1cの平均結晶粒径diが大きいため、全体としての歪み緩和効果が大きい。また、ds/dp<100であることにより、金属多孔質体2の平均結晶粒径dpが外部層1bの平均結晶粒径dsより小さくなりすぎず連続的に降伏歪が変化しやすいため、歪集中が抑制され、繰り返し歪を付加した際にクラック発生点が形成され難い。
本実施形態では、金属部材1の一方の主面1a上に金属多孔質体2が形成されているが、金属部材1の両方の主面上に金属多孔質体が形成されてもよい。
(イ)半導体チップ
半導体チップのサイズは7mm×7mm、厚さは230μmであり、その接合面はNi-Ti―Au合金でメタライズされている。材質は、SiCである。
(ロ)金属微粒子分散液
銅微粒子分散液:ジエチレングリコール中に、Cu濃度80質量%で銅微粒子が分散している銅微粒子分散液を用いた。なお、該銅微粒子分散液には、高分子分散剤としてポリビニルピロリドンが0.3質量%配合されている。
銀微粒子分散液:オクタンジオール中に、Ag濃度89質量%の濃度で銀微粒子が分散している銀微粒子分散液(DOWAメタルテック(株)製、銀ナノペースト)を用いた。
(ハ)金属部材(金属基板)
(i)セラミックス基板(DBC)
日鉄住金エレクトロデバイス社製のDBC基板(Cu/Al2O3(アルミナ)/Cu)を使用した。Cu板の厚さ:0.3mm/セラミックス板:厚さ0.32mm/Cu板の厚さ:0.3mmである。
(ii)セラミックス基板(薄膜+めっき)
厚さ0.64mmのAl2O3(アルミナ)の白板セラミックス基板にNi・Cr/Cu(0.2μm/6μm)を蒸着し、その後以下のめっき条件にて、Cuの厚さが両面0.3mmtとなるまで厚付した。
めっき液:CuSO4・5H2O 250g/L(水)、H2SO4 50g/L(水)、NaCl 0.1g/L(水)
電流密度:5A/dm2、温度40℃
(iii)リードフレーム材
無酸素銅C1020を使用した。厚さは1.2mmである。
(iv)積層DBC基板(厚銅板)
日鉄住金エレクトロデバイス社製のDBC基板(Cu/Al2O3(アルミナ)/Cu)を使用した。Cu板の厚さ:0.3mm/セラミックス板の厚さ:0.32mm/Cu板の厚さ:0.3mmである。
DBC基板の一方の銅板7表面を洗浄後、粒径40μmであるアルミナビーズのメディアを使用したウエットブラスト(WB)法により、圧力0.20MPaで処理速度10mm/secで処理した。次に、銅微粒子分散液を100μmの厚さになるようにWB処理された面に塗布し、110℃で15分間乾燥させた。更に、厚さ0.3mmの厚銅板4を、乾燥させた銅微粒子分散液上に搭載した後、焼結装置にセットした。焼結は、減圧雰囲気下(酸素濃度1000ppm以下)、300℃、圧力10MPaで15分間行い、厚銅板4とDBC基板の銅板7の間に金属多孔質体6を形成した。
(v)積層DBC基板(めっき層付き銅箔)
日鉄住金エレクトロデバイス社製のDBC基板(Cu/Al2O3(アルミナ)/Cu)を使用した。Cu板の厚さ:0.3mm/セラミックス板の厚さ:0.32mm/Cu板の厚さ:0.3mmである。
厚さ0.1mmの銅箔を500℃で1時間加熱処理を行った後、以下のめっき条件で銅箔の両表面にめっき層を0.1mm形成した厚銅板4を形成した。
DBC基板の一方の銅板7表面を洗浄後、粒径40μmであるアルミナビーズのメディアを使用したウエットブラスト(WB)法により、圧力0.20MPaで処理速度10mm/secで処理した。次に、銅微粒子分散液を100μmの厚さになるようにWB処理された面に塗布し、110℃で15分間乾燥させた。更に、銅箔の両表面にめっき層を形成しためっき層付き銅箔を、乾燥させた銅微粒子分散液上に搭載した後、焼結装置にセットした。焼結は、減圧雰囲気下(酸素濃度1000ppm以下)、300℃、圧力10MPaで15分間行い、厚銅板4とDBC基板の銅板7の間に金属多孔質体6を形成した。めっき液:CuSO4・5H2O 250g/L(水)、H2SO4 50g/L(水)、NaCl 0.1g/L(水)
電流密度:5A/dm2、温度40℃
図3(a)~(c)に示す焼結装置を使用した。
(イ)金属部材の表面粗さ
レーザー顕微鏡(KEYENCE VK9710)にて測定を行った。
(ロ)金属多孔質体の平均結晶粒径dp
金属部材上に金属多孔質体と半導体チップとを形成したサンプルを作製し、その半導体チップ側から半導体チップを10μm程度残すまで研磨する。その後、ナノ加工顕微鏡システム(FIB装置;エスアイアイ・ナノテクノロジー社製 SMI3050TB)を用いてGaビームエッチングにより厚さを50nm程度に加工して、マイクロプローブで切断してサンプルを切り出す。TEM(日本電子製 JEM3010)にそのサンプルをセットし、加速電圧200KV、5000倍の条件でTEM画像を得て、金属多孔質体の結晶粒径を確認した。TEM画像上で、TEM(日本電子製 JEM3010)付属ソフトを用いて金属多孔質体の厚み方向の中心に直線(a)を引き、その直線(a)上に存在する結晶20個について(長径+短径)/2の平均値を算出した。直線(a)は次のように引いた。
まず、金属基板と金属多孔質体との界面において、直線距離が金属多孔質体の厚さとなるような任意の2点を選択し、この2点を結ぶ直線(b)を引いた。次に、直線(b)から金属多孔質体の厚さ方向へ、金属多孔質体の半分の厚さ分離れた位置に、直線(b)と平行な直線である直線(a)を引いた(図5)
(ハ)外部層の平均結晶粒径ds
(ロ)と同様にして得られたサンプルを、(ロ)と同条件でTEMを使用し、金属部材の外部層の結晶粒径を確認した。TEM画像において、金属多孔質体と金属部材との界面から金属部材側へ1μm離れた位置に、当該界面に沿った線(c)を引いた。線(c)上に存在する結晶20個について(長径+短径)/2の平均値を算出した(図5)。
(ニ)内部層の平均結晶粒径di
(ロ)と同様にして得られたサンプルを、(ロ)と同条件でTEMを使用し、金属部材の内部層の結晶粒径を確認した。TEM画像において、金属部材の厚み方向の中心に直線(d)を引き、その直線(d)上に存在する結晶20個について(長径+短径)/2の平均値を算出した。直線(d)は次のように引いた。
まず、金属基板と金属多孔質体との界面において、直線距離が金属部材の厚みとなるような任意の2点を選択し、この2点を結ぶ直線(e)を引いた。次に、直線(e)から金属部材の厚さ方向へ、金属部材の半分の厚さ分離れた位置に、直線(e)と平行な直線である直線(d)を引いた(図5)。
(ホ)熱衝撃試験(TCT)
金属部材上に金属多孔質体と半導体チップとを形成したサンプルを作製した。温度サイクル試験(150℃で30分間、その後-40℃で30分間保持するサイクル試験)へサンプルを投入し、100サイクルごとに超音波探傷機(SAT)で観察した。超音波探傷機(日立建機株式会社製、 Mi-Scope)とプローブ(型式PQ2-13、50MHz)を使用して、半導体素子側から超音波を照射し、反射法で半導体素子裏面から金属部材表面まで入るようにゲートを調整し、接合面や金属多孔質体内に剥離やボイドなどの欠陥がないか測定を行った。金属部材と金属多孔質体との接合面の面積10%以上で剥離が見られるまで試験を繰り返した。剥離が見られるまでのサイクル数について、サンプル20個の平均値を算出した。
金属部材がセラミックス基板を有する場合には、平均サイクル数が1000以上を「○」、1000未満を「×」とした。金属部材がリードフレーム材である場合には、平均サイクル数が500以上を「○」、500未満を「×」とした。
DBC基板の銅板表面を洗浄後、粒径14μmであるアルミナビーズのメディアを使用したウエットブラスト(WB)法により、圧力0.20MPaで処理速度20mm/secで処理した。次に、銅微粒子分散液を100μmの厚さになるように塗布し、110℃で15分間乾燥させた。半導体チップを搭載した後、焼結装置にセットした。焼結は、減圧雰囲気下(酸素濃度1000ppm以下)、300℃、圧力10MPaで15分間行った。
[実施例1-2]
実施例1-1において、焼結後にさらに加熱処理を行った以外は同様の方法で実施した。加熱処理は、500℃で30分間行った。
[実施例1-3]
実施例1-1において、表面処理の条件を変更した以外は同様の方法で実施した。表面処理は、具体的には、粒径40μmであるアルミナビーズのメディアを使用したウエットブラスト(WB)法により、圧力0.20MPaで処理速度10mm/secで行った。
[実施例1-4]
実施例1-2において、DBC基板に代えて、セラミックス板にスパッタによりNi/Cr/Cuの薄膜層とめっき層を形成した基板を使用し、表面処理の前に加熱処理を行った以外は同様の方法で実施した。加熱処理は、400℃で30分間行った。
[実施例1-5]
実施例1-3において、焼結後にさらに加熱処理を行った以外は同様の方法で実施した。加熱処理は、500℃で30分間行った。
[実施例1-6]
実施例1-4において、表面処理の条件を変更し、焼結後にさらに加熱処理を行わなかった以外は同様の方法で実施した。表面処理は、具体的には、粒径7μmであるアルミナビーズのメディアを使用したウエットブラスト(WB)法により、圧力0.2MPaで処理速度20mm/secで行った。
[実施例1-7]
実施例1-1において、表面処理の条件を変更した以外は同様の方法で実施した。表面処理は、具体的には、粒径7μmであるアルミナビーズのメディアを使用したウエットブラスト(WB)法により、圧力0.2MPaで処理速度20mm/secで行った。
[実施例1-8]
実施例1-4において、表面処理の前における加熱処理を400℃で15分間行った以外は同様の方法で実施した。
[実施例1-9]
実施例1-1において、DBC基板に代えて、セラミックス板にスパッタによりNi/Cr/Cuの薄膜層とめっき層を形成した基板を使用した以外は同様の方法で実施した。
[実施例1-10]
実施例1-1において、焼結を250℃で行った以外は同様の方法で実施した。
[実施例1-11]
実施例1-2において、表面処理の前に加熱処理を行った以外は同様の方法で実施した。加熱処理は、400℃で1時間行った。
[実施例1-12]
実施例1-3において、焼結後にさらに加熱処理を行った以外は同様の方法で実施した。加熱処理は、500℃で30分間行った。
[実施例1-13]
実施例1-6において、焼結を200℃で行い、焼結後にさらに加熱処理を行った以外は同様の方法で実施した。加熱処理は、500℃で30分間行った。
[実施例1-14]
実施例1-12において、焼結を200℃で行った以外は同様の方法で実施した。
[実施例1-15]
実施例1-13において、表面処理の前に加熱処理を行わず、焼結を250℃で行った以外は同様の方法で実施した。
[実施例1-16]
実施例1-11において、表面処理の条件を変更し、焼結を200℃で行った以外は同様の方法で実施した。表面処理は、具体的には、粒径40μmであるアルミナビーズのメディアを使用したウエットブラスト(WB)法により、圧力0.2MPaで処理速度20mm/secで行った。
[比較例1-1]
実施例1-1において、表面処理を行わなかった以外は同様の方法で実施した。
[比較例1-2]
実施例1-1において、表面処理をWB処理からプラズマ処理に変更した以外は同様の方法で実施した。具体的に、まず、DBC基板をスパッタリング装置のチャンバー内にセットし、真空引きを行った。そして、Arガスをチャンバー内に導入し、チャンバー内圧力を1Paとした。RF電源によって電力を供給することで、DBC基板の銅板表面付近にArプラズマを発生させ、銅板表面に照射した。このRF電源の入カパワーの条件は、0.25W/cm2とし、照射時間は5分間とした。
[比較例1-3]
実施例1-10において、焼結後にさらに加熱処理を行った以外は同様の方法で実施した。加熱処理は、500℃で30分間行った。
実施例1-1ないし実施例1-16において、金属部材をセラミックス基板からリードフレーム材に変更した以外は同様の方法で実施した。
[比較例2-1]
実施例2-2において、表面処理を行わなかった以外は同様の方法で実施した。
[比較例2-2]
実施例2-1において、表面処理をWB処理からプラズマ処理に変更した以外は同様の方法で実施した。なお、プラズマ処理は比較例1-2と同様の方法で行った。
セラミックス基板に焼結体を介して厚銅板(金属部材)を接続した厚銅板積層DBC基板を用いた。
厚銅板積層DBC基板の厚銅板の上下両表面に対して、実施例1-1ないし実施例1-16と同様に表面処理及び加熱処理を行い、半導体チップを、金属多孔質体を介して厚銅板上に搭載した。
[実施例3-17]
実施例3-1において、厚銅板積層DBC基板の金属多孔質体側の厚銅板のセラミックス基板側の表面に対して表面処理を行わず、厚銅板の半導体チップ側の表面のみに表面処理を行った以外は同様の方法で実施した。
実施例1-1~実施例1-16において、銅微粒子分散液を銀微粒子分散液に変更し、焼結を大気雰囲気下で行った以外は同様の方法で実施した。
[比較例4-1~比較例4-3]
比較例1-1~比較例1-3において、銅微粒子分散液を銀微粒子分散液に変更し、焼結を大気雰囲気下で行った以外は同様の方法で実施した。
1a 主面
1b 外部層
1c 内部層
2,3,5,6 金属多孔質体
4 厚銅板
7,9 銅板
8 セラミックス板
21 下熱盤
22 プレス板
23 積層体
24 チャンバー
25 加圧シリンダー
26 上熱盤
Claims (11)
- 金属部材と、前記金属部材上に形成された金属多孔質体とを有する接合構造であって、
前記金属部材は、少なくとも一方の主面を含み前記金属多孔質体側に形成された第1外部層と、前記第1外部層よりも厚み方向において前記金属多孔質体から離れた位置に形成された第1内部層とを有し、
前記第1外部層の平均結晶粒径dsが、前記第1内部層の平均結晶粒径diよりも小さく、
前記金属多孔質体の平均結晶粒径dpが、前記第1外部層の平均結晶粒径dsよりも小さい、又は同じであることを特徴とする接合構造。 - 前記平均結晶粒径dsと前記平均結晶粒径dpが
1≦ds/dp<100
を満たすことを特徴とする、請求項1に記載の接合構造。 - 前記平均結晶粒径dsが0.2μm以上10μm未満であることを特徴とする、請求項1又は2に記載の接合構造。
- 前記平均結晶粒径diが10μm以上100μm未満であることを特徴とする、請求項1から3のいずれか1項に記載の接合構造。
- 前記平均結晶粒径dpが0.1μm以上1μm以下であることを特徴とする、請求項1から4のいずれか1項に記載の接合構造。
- 前記金属部材及び前記金属多孔質体を構成する金属材料がCu若しくはCu合金又はAg若しくはAg合金であることを特徴する、請求項1から5のいずれか1項に記載の接合構造。
- 前記金属多孔質体上に、さらに、金属板を備えることを特徴とする、請求項1から6のいずれか1項に記載の接合構造。
- [規則91に基づく訂正 27.01.2015]
前記金属板は、少なくとも一方の主面を含み前記金属多孔質体側に形成された第2外部層と、前記第2外部層よりも厚み方向において前記金属多孔質体から離れた位置に形成された第2内部層とを有し、
前記第2外部層における平均結晶粒径ds’が、前記第2内部層における平均結晶粒径di’よりも小さいことを特徴とする、請求項7に記載の接合構造。 - 前記金属部材がリードフレーム用基材であることを特徴とする、請求項1から6のいずれか1項に記載の接合構造。
- セラミックス基板と、前記セラミックス基板上に形成された金属多孔質体と、前記金属多孔質体上に配置された電子部材とを有する電子部材接合構造体であって、
前記セラミックス基板は、セラミックス体と、前記セラミックス体上に形成された金属層とを有し、
前記金属層は、少なくとも一方の主面を含み前記金属多孔質体側に形成された外部層と、前記外部層よりも厚み方向において前記金属多孔質体から離れた位置に形成された内部層とを有し、
前記外部層の平均結晶粒径dsが、前記内部層の平均結晶粒径diよりも小さく、
前記金属多孔質体の平均結晶粒径dpが、前記外部層の平均結晶粒径dsよりも小さい、又は同じであることを特徴とする電子部材接続構造体。 - 前記金属多孔質体と前記電子部材との間に、Au、Ag、Cu、Pd,Ptのいずれか1種又は2種以上からなる電極層を有する請求項10に記載の電子部材接合構造体。
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WO2018008168A1 (ja) * | 2016-07-04 | 2018-01-11 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
US10468375B2 (en) | 2016-07-04 | 2019-11-05 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing same |
CN109616460A (zh) * | 2017-10-04 | 2019-04-12 | 三菱电机株式会社 | 电力用半导体装置 |
CN109616460B (zh) * | 2017-10-04 | 2023-02-24 | 三菱电机株式会社 | 电力用半导体装置 |
WO2021048937A1 (ja) * | 2019-09-11 | 2021-03-18 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
JPWO2021048937A1 (ja) * | 2019-09-11 | 2021-11-25 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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EP3057123A4 (en) | 2017-09-13 |
JP5877276B2 (ja) | 2016-03-02 |
KR20160067119A (ko) | 2016-06-13 |
JPWO2015053193A1 (ja) | 2017-03-09 |
KR101887290B1 (ko) | 2018-08-09 |
EP3057123B1 (en) | 2021-12-08 |
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