JP7026739B2 - 接合方法、銅焼結体及び銅ペースト - Google Patents
接合方法、銅焼結体及び銅ペースト Download PDFInfo
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- JP7026739B2 JP7026739B2 JP2020132419A JP2020132419A JP7026739B2 JP 7026739 B2 JP7026739 B2 JP 7026739B2 JP 2020132419 A JP2020132419 A JP 2020132419A JP 2020132419 A JP2020132419 A JP 2020132419A JP 7026739 B2 JP7026739 B2 JP 7026739B2
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- 229910052802 copper Inorganic materials 0.000 title claims description 181
- 239000010949 copper Substances 0.000 title claims description 181
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 175
- 238000005304 joining Methods 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 36
- 239000002105 nanoparticle Substances 0.000 claims description 68
- 239000012298 atmosphere Substances 0.000 claims description 28
- 238000005245 sintering Methods 0.000 claims description 26
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 18
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 9
- 235000019253 formic acid Nutrition 0.000 claims description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000003638 chemical reducing agent Substances 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 8
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 7
- 239000005751 Copper oxide Substances 0.000 claims description 7
- 229910000431 copper oxide Inorganic materials 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 description 51
- 239000002612 dispersion medium Substances 0.000 description 10
- 239000003960 organic solvent Substances 0.000 description 8
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 239000011164 primary particle Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 150000001879 copper Chemical class 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005324 grain boundary diffusion Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Composite Materials (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
- Conductive Materials (AREA)
- Die Bonding (AREA)
Description
作製後1日以上経過して表面が酸化された銅焼結体を用いた。前処理は行わなかった。それ以外の条件は実施例2と同じにした。その結果、せん断強度は1~6MPaであり、実施例2と比べて接合強度が顕著に低かった。
作製後1日以上経過して表面が酸化された銅焼結体を用いた。前処理は行わなかった。それ以外の条件は実施例3、4と同じにした。その結果、せん断強度は3~17MPaであり、実施例3、4と比べて接合強度が顕著に低かった。
2 被接合物
3 被接合物
4 積層物
Claims (7)
- 銅ナノ粒子が焼結されてシート状に形成された銅焼結体を用いた接合方法であって、
一方の被接合物と、前記銅焼結体と、他方の被接合物とをこの順に積層した積層物を作る積層工程と、
前記積層物を加圧及び加熱して接合する接合工程とを有し、
前記積層工程の前に、前記銅焼結体の表面の銅酸化物が除去される前処理が行われることを特徴とする接合方法。 - 前記前処理として、前記銅ナノ粒子の焼結による前記銅焼結体の形成は、還元雰囲気下で行われることを特徴とする請求項1に記載の接合方法。
- 前記還元雰囲気は、ギ酸雰囲気であることを特徴とする請求項2に記載の接合方法。
- 前記前処理として、銅表面の酸化被膜を還元する還元剤、又は銅表面の酸化被膜をエッチングするエッチング液が前記銅焼結体に塗布されることを特徴とする請求項1に記載の接合方法。
- 前記還元剤は、ギ酸であることを特徴とする請求項4に記載の接合方法。
- 前記エッチング液は、硫酸を含む水溶液であることを特徴とする請求項4に記載の接合方法。
- 前記接合工程は、非酸化雰囲気下で行われることを特徴とする請求項1乃至請求項6のいずれか一項に記載の接合方法。
Priority Applications (3)
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JP2020132419A JP7026739B2 (ja) | 2020-08-04 | 2020-08-04 | 接合方法、銅焼結体及び銅ペースト |
PCT/JP2021/027888 WO2022030327A1 (ja) | 2020-08-04 | 2021-07-28 | 接合方法、銅焼結体及び銅ペースト |
CN202180037182.8A CN115697591A (zh) | 2020-08-04 | 2021-07-28 | 连接方法、铜烧结体和铜膏 |
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JP2020132419A JP7026739B2 (ja) | 2020-08-04 | 2020-08-04 | 接合方法、銅焼結体及び銅ペースト |
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JP2022029194A JP2022029194A (ja) | 2022-02-17 |
JP7026739B2 true JP7026739B2 (ja) | 2022-02-28 |
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JP (1) | JP7026739B2 (ja) |
CN (1) | CN115697591A (ja) |
WO (1) | WO2022030327A1 (ja) |
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JP2023098498A (ja) * | 2021-12-28 | 2023-07-10 | 三菱マテリアル株式会社 | 接合用シート、及び接合体の製造方法 |
JP2023098495A (ja) * | 2021-12-28 | 2023-07-10 | 三菱マテリアル株式会社 | 接合用シート、接合用シートの製造方法、及び接合体の製造方法 |
WO2024095698A1 (ja) * | 2022-10-31 | 2024-05-10 | 株式会社ダイセル | 溶剤組成物、及び焼結体の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244242A (ja) | 2007-03-28 | 2008-10-09 | Hitachi Ltd | 半導体装置、その製造方法、複合金属体及びその製造方法 |
JP2013091835A (ja) | 2011-10-27 | 2013-05-16 | Hitachi Ltd | 銅ナノ粒子を用いた焼結性接合材料及びその製造方法及び電子部材の接合方法 |
JP2014167145A (ja) | 2013-02-28 | 2014-09-11 | Osaka Univ | 接合材 |
JP2017152638A (ja) | 2016-02-26 | 2017-08-31 | 株式会社村田製作所 | 接合構造、該接合構造を備えた電子部品、および該接合構造の形成方法 |
WO2019188511A1 (ja) | 2018-03-29 | 2019-10-03 | ハリマ化成株式会社 | 銅ペースト、接合方法および接合体の製造方法 |
JP6713120B1 (ja) | 2019-12-27 | 2020-06-24 | 小松 晃雄 | 銅焼結基板ナノ銀含浸型接合シート、製法及び接合方法 |
-
2020
- 2020-08-04 JP JP2020132419A patent/JP7026739B2/ja active Active
-
2021
- 2021-07-28 CN CN202180037182.8A patent/CN115697591A/zh active Pending
- 2021-07-28 WO PCT/JP2021/027888 patent/WO2022030327A1/ja active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008244242A (ja) | 2007-03-28 | 2008-10-09 | Hitachi Ltd | 半導体装置、その製造方法、複合金属体及びその製造方法 |
JP2013091835A (ja) | 2011-10-27 | 2013-05-16 | Hitachi Ltd | 銅ナノ粒子を用いた焼結性接合材料及びその製造方法及び電子部材の接合方法 |
JP2014167145A (ja) | 2013-02-28 | 2014-09-11 | Osaka Univ | 接合材 |
JP2017152638A (ja) | 2016-02-26 | 2017-08-31 | 株式会社村田製作所 | 接合構造、該接合構造を備えた電子部品、および該接合構造の形成方法 |
WO2019188511A1 (ja) | 2018-03-29 | 2019-10-03 | ハリマ化成株式会社 | 銅ペースト、接合方法および接合体の製造方法 |
JP6713120B1 (ja) | 2019-12-27 | 2020-06-24 | 小松 晃雄 | 銅焼結基板ナノ銀含浸型接合シート、製法及び接合方法 |
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Publication number | Publication date |
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WO2022030327A1 (ja) | 2022-02-10 |
CN115697591A (zh) | 2023-02-03 |
JP2022029194A (ja) | 2022-02-17 |
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