WO2015050320A1 - 광투과도가 우수한 전극, 이의 제조방법 및 이를 포함하는 전자소자 - Google Patents
광투과도가 우수한 전극, 이의 제조방법 및 이를 포함하는 전자소자 Download PDFInfo
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- WO2015050320A1 WO2015050320A1 PCT/KR2014/007868 KR2014007868W WO2015050320A1 WO 2015050320 A1 WO2015050320 A1 WO 2015050320A1 KR 2014007868 W KR2014007868 W KR 2014007868W WO 2015050320 A1 WO2015050320 A1 WO 2015050320A1
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Images
Classifications
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H10K50/816—Multilayers, e.g. transparent multilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
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- H10K59/80517—Multilayers, e.g. transparent multilayers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
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- H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to an electrode having excellent light transmittance, a manufacturing method thereof, and an electronic device including the same. More particularly, the present invention relates to an electrode having a multilayer structure having improved light transmittance, which can be utilized as a transparent electrode.
- Transparent electrodes for next-generation electronic devices are mechanically flexible and require excellent optical properties (light transmittance> 85%, @ 550 nm) and excellent electrical properties (surface resistance ⁇ 15 mA / ⁇ ).
- the most commonly used transparent electrode is an indium tin oxide (ITO) thin film doped with indium oxide and tin oxide.
- ITO indium tin oxide
- the ITO has the following problems.
- ITO transparent electrodes unlike metal materials and polymer materials, are easily formed with cracks due to bending of the substrate, which makes it difficult to apply the device.
- One aspect of the present invention is to provide an electrode having a high light transmittance and low sheet resistance, the improved wettability of the metal to the substrate and an electronic device comprising the electrode.
- this paper suggests a way to combine flexibility.
- Another aspect of the present invention is to propose a method of manufacturing an electrode having excellent light transmittance that can be processed at a relatively low temperature, mass production.
- the first aspect of the present invention a substrate; An amine group-containing compound layer formed on the substrate; And it provides an electrode having excellent light transmittance comprising a metal layer formed on the amine group-containing compound layer.
- an anti-reflection layer may be further included on the metal layer, but is not limited thereto.
- a metal oxide layer may be further included between the substrate and the amine group-containing compound layer, but is not limited thereto.
- a second aspect of the present invention provides an electronic device including the electrode excellent in the light transmittance.
- a method including forming an amine group-containing compound layer on a substrate; And it provides a method for producing an electrode having excellent light transmittance comprising the step of forming a metal layer on the amine group-containing compound layer.
- the present invention when the solution process is used, it is easy to fabricate the electrode, and has excellent performance of light transmission having excellent performance (light transmittance> 85%, @ 550 nm, sheet resistance ⁇ 15 ⁇ s / ⁇ ) and flexibility to replace the existing ITO. Not only can it be manufactured, but the manufacturing cost can be lowered.
- FIG 1 is four examples of an electrode configuration diagram according to an embodiment of the present invention.
- Figure 2 is a scanning electron microscope (Scanning Electron Microscope, SEM) image (a) of the silver thin film formed on the glass substrate according to a comparative example of the present invention, and an amine group between the glass substrate and the silver thin film according to an embodiment of the present invention SEM image (b) when the containing polymer is interposed.
- SEM Scanning Electron Microscope
- FIG. 3 is SEM images of Ag thickness variation for a case of Ag and PEI (Polyethyleneimine) / Ag stacked on a glass substrate.
- PEI Polyethyleneimine
- FIG. 4 is a graph showing light transmittance for each wavelength band for a case of stacking Ag, PEI / Ag, and PEI / Ag / PEDOT: PSS on a glass substrate.
- FIG. 5 is a graph showing light transmittance for each wavelength band for a case of stacking Ag, PEI / Ag, and PEI / Ag / PEDOT: PSS on a PEN substrate.
- FIG. 6 is a graph showing light transmittance for each wavelength band when the Ag, TiOx / Ag, TiOx / PEI / Ag, and TiOx / PEI / Ag / PEDOT: PSS layers are stacked on a PEN substrate.
- FIG 8 is a graph showing light transmittance for each wavelength band for a case of stacking Ag, PEI / Ag, and PEI / Ag / DPF (Diphenyl fluorene derivative) on a glass substrate, respectively.
- FIG. 9 is a graph showing light transmittance for each wavelength band in the case of stacking Ag, PEI / Ag, and PEI / Ag / PFN on a PEN substrate.
- FIG. 10 is a diagram illustrating a case where a thin film is formed in an island mode when a metal is deposited on a substrate (a), and when a thin film is formed in a layer-by-layer mode (b). .
- FIG. 11 is a schematic diagram showing a bonding relationship between a metal layer (Ag) and a polymer (PEI) containing an amine group according to an embodiment of the present invention.
- FIG. 12 is a photograph of roughness of a surface of a glass substrate in which Ag and PEI / Ag are respectively laminated.
- FIG. 13 is a structural diagram of a solar cell including an electrode according to an embodiment of the present invention.
- FIG. 14 is a graph showing a performance evaluation result of a solar cell including an electrode according to an embodiment of the present invention.
- FIG. 15 is a structural diagram of an organic light emitting diode including an electrode according to an embodiment of the present invention.
- 16 is a graph illustrating a performance evaluation result of an organic light emitting diode including an electrode according to an embodiment of the present invention.
- the present invention relates to an electrode having excellent light transmittance and a method of manufacturing the same, and more particularly, to an ultra-thin metal electrode having a multilayer structure.
- the ultra-thin metal electrode having excellent light transmittance of the present invention is a substrate / amine group-containing compound layer / metal layer, substrate / amine group-containing compound layer / metal layer / antireflective layer, substrate / metal oxide layer / amine group-containing compound layer / metal layer or substrate / It may consist of a metal oxide layer / amine group-containing compound layer / metal layer / antireflection layer.
- An exemplary schematic diagram of each electrode is shown in FIG. 1.
- ultra thin metal electrodes can take advantage of the excellent mechanical flexibility and high electrical conductivity of the metal.
- An electrode using an ultra-thin metal is used by depositing a thin metal film of several nanometers to several tens of nanometers on a substrate.
- a difficulty in forming a uniform thin film due to poor wettability of the metal to the substrate.
- the nucleus of the metal is not evenly formed on the surface of the substrate to grow into the thin film.
- a metal thin film is formed as a so-called "Island Growth Mode" in which metal islands are formed three-dimensionally as the metal nuclei are nucleated on the surface of the substrate.
- Metal nano-films of several nanometers thick formed in island growth mode have a high surface resistance due to rough surface of the electrode without forming a continuous network.
- due to the plasmon effect generated due to the formation of metal islands there is a problem in that absorption appears in the visible light region and thus transmittance is lowered.
- This phenomenon can be seen in the graph of FIG. 4, when only Ag is deposited on the glass substrate, a peak due to the plasmon effect is observed in the vicinity of 550 nm, and it can be confirmed that the transmittance is very low.
- the island size of the metal is gradually increased to form a continuous network and significantly reduce the sheet resistance, but there is a problem that the transmittance is even lower.
- An amine group-containing compound may be applied onto the substrate to fix the metal on the substrate through a reaction between the metal of the metal layer formed thereafter and the amine group.
- FIG. 11 the binding relationship between the metal (Ag) included in the metal layer and the amine group-containing polymer (PEI), which is a kind of a compound containing an amine group, is illustrated. That is, due to the strong chemical bond between the amine group-containing polymer and the metal on the substrate, it prevents the aggregation of metal (Ag) nuclei, which is more uniform and dense than the metal thin film without the introduction of the amine group-containing polymer. ) Is formed. This is considered to be a result of the complex action of the large surface energy of the amine group-containing polymer and the chemical bond between the amine group and the metal.
- the metal thin film may be formed on the amine group-containing compound layer using a layer-by-layer growth mode as shown in FIG. 10 (b) instead of an island growth mode. .
- An inorganic substrate or an organic substrate may be used as the substrate.
- the inorganic substrate may be made of glass, quartz, Al 2 O 3 , SiC, Si, GaAs, or InP, but is not limited thereto.
- the organic substrate include methtone foil, polyimide (PI), polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), and polyethylene naphthalate. , PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polycarbonate (PC), cellulose triacetate (CTA), The cellulose acetate propionate (CAP) may be selected from, but is not limited thereto. Since the electrode of the present invention pursues excellent light transmittance, the inorganic substrate and the organic substrate are more preferably made of a transparent material.
- Non-limiting examples of the amine group-containing compound include alkylamines which may have substituents, cycloalkylamines which may have substituents, arylamines which may have substituents, polymers containing amine groups derived from these amines, or The polymer containing the amine group may be a combination of two or more, but is not limited thereto.
- the polymer containing the said amine group is a conjugated polymer containing all types of amine groups;
- the present invention may be understood as a concept including a non-conjugated polymer such as polyethyleneimine (PEI), polylysine PLS, or polyarylamine (PAA).
- PEI polyethyleneimine
- PAA polyarylamine
- Forming the amine group-containing compound layer on the substrate may include, for example, applying or self-assembling an amine group-containing compound to the surface of the substrate, but is not limited thereto.
- the amine group-containing compound When the amine group-containing compound is applied through a solution process, the amine group-containing compound may be dissolved in a solvent such as deionized water or alcohol to prepare a solution and apply the same.
- a solvent such as deionized water or alcohol
- the concentration of such a solution and the kind of solvent can be suitably adjusted as needed.
- the amine group-containing compound solution is spin coated, roll coated, spray coated, flow coated, inkjet printed, nozzle printing, dip coated, electrophoretic deposition, tape casting, Amine group-containing by coating on the substrate by screen printing, pad printing, doctor blade coating, gravure printing, gravure offset printing, or Langmuir-Blogett method
- the compound layer may be formed, or the amine group-containing compound layer may be formed using a sputter deposition method, an electron beam deposition method, a thermal deposition method, or a chemical vapor deposition method in addition to the solution process, but is not limited thereto.
- a metal layer is formed on the previously formed amine group-containing compound layer.
- Metals that may be used herein may include, but are not limited to, transition metals.
- the metal may be Ag, Cu, Au, Al, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Ti, V, Cr , Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Tl, Pb , Bi, Ga, Ge, Sb, Ac, Th, and a combination thereof may be a transition metal selected from the group consisting of.
- the metal layer may be formed by a sputter deposition method, an electron beam deposition method, a thermal deposition method, a chemical vapor deposition method, or a coating method by a solution process.
- the metal-containing solution may be prepared by dissolving the metal in an appropriate solvent, and the concentration of the solution may be appropriately adjusted within a range that can be applied to the amine group-containing compound layer by those skilled in the art.
- the solvent used for preparing the metal-containing solution may include an aqueous solvent, a non-aqueous solvent, or a mixed solvent thereof.
- the solvent may include alcohols such as water, methanol, ethanol, isopropanol, butanol; Glycols such as ethylene glycol and glycerin; Acetates such as ethyl acetate, butyl acetate and carbitol acetate; Ethers such as diethyl ether, tetrahydrofuran and dioxane; Ketones such as methyl ethyl ketone and acetone; Hydrocarbon systems such as hexane and heptane; Aromatics such as benzene and toluene; And a halogen-substituted solvent such as chloroform, methylene chloride, carbon tetrachloride, and a mixed solvent thereof, but are not limited thereto.
- alcohols such as water, methanol, ethanol, isopropanol, butanol
- Glycols such as ethylene glycol and glycerin
- Acetates such as
- the method of applying the metal-containing solution to the amine group-containing compound layer is the same as the method of applying the amine group-containing compound solution to the substrate, and the redundant description will be omitted below.
- the thickness of the metal layer can be adjusted in the range of 3 ⁇ 20 nm for electrode formation, but is not limited thereto.
- a good light transmittance and sheet resistance can be obtained as the electrode only by the configuration of the substrate / amine group-containing compound layer / metal layer, but an antireflection layer may be further included on the metal layer in order to obtain better performance.
- the anti-reflection layer has an anti-reflection effect due to the refractive index of the compound, it is determined that the transparency of the electrode is further increased by enhancing the optical properties using the anti-reflection layer.
- a conductive polymer may be used for the anti-reflection layer, but is not limited thereto, and metal oxides, electrolytes, or other organic materials may be used.
- the conductive polymer used as the antireflection layer may include a conductive polymer that may contain a hetero element selected from the group consisting of nitrogen, oxygen, sulfur, carbon, and combinations thereof, but is not limited thereto.
- the conductive polymer may be polyaniline, polythiophene, polyethylenedioxythiophene (PEDOT), polyimide, polystyrenesulfonate (PSS), polypyrrole , Polyacetylene, poly (p-phenylene) [Poly (p-phenylene)], poly (p-phenylene sulfide) [Poly (p-phenylene sulfide)], poly (p-phenylene vinylene) [Poly (p-phenylene vinylene)], Polythiophene Poly (thienylene vinylene) [Poly (3,4-ethylenedioxythiophene) poly (styrene sulfonate) [Poly (3,4-ethylenedioxythiophene) poly (st
- the polymer electrolyte in the electrolyte used as the antireflection layer is, for example, poly [9,9-bis (3 '-(N, N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7 -(9,9-dioctylfluorene)] (poly [(9,9-bis (3 '-(N, N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7- (9 , 9-dioctylfluorene), PFN), poly (9,9-bis (4'-sulfonatobutyl) fluorene-alt-co-1,4-phenylene (poly (9,9-bis (4'- sulfonatobutyl) (fluorine-alt-co-1,4-phenylene, PFP), polystyrene sulfonic acid (PSS), poly (p-quaterphen
- the method of forming the antireflection layer is the same as the method of applying the amine group-containing compound solution to the substrate, and the redundant description will be omitted below.
- a metal oxide layer is respectively provided between the substrate and the amine group-containing compound layer for each of the electrode composed of the substrate / amine group-containing compound layer / metal layer and the electrode composed of the substrate / amine group-containing compound layer / metal layer / antireflective layer. It is possible to provide an electrode further comprising.
- the introduction of the metal oxide layer between the substrate and the amine group-containing compound layer can be expected to increase the life of the electrode.
- the metal oxide is an amphiphilic material having both hydrophobicity and hydrophilicity, it will serve as an adhesive on hydrophobic substrates as well as hydrophilic substrates, thereby facilitating the fabrication of electrodes.
- the metal oxide constituting the metal oxide layer includes all kinds of metal oxides having amphiphilicity.
- titanium oxide Tianium sub-oxide, TiO X and Titanium oxide, TiO 2
- zinc oxide Zinc oxide
- ZnO zinc oxide
- tungsten oxide W 2 O 3 , WO 2 , WO 3
- molybdenum oxide Molybdenum oxide, MoO 2 , MoO 3 and Molybdenum sub-oxide, MoO X
- These materials can be manufactured from thin film by solution process using materials synthesized in the form of sputter deposition, thermal evaporation or sol-gel.
- the present invention provides an electronic device including the electrode of the multilayer structure. That is, the electrode of the present invention is a solar cell, a secondary battery or a fuel cell, and a plasma display (PDP), a liquid crystal display (TFT-LCD), an organic light emitting diode (OLED), a flexible display and an organic thin film transistor (OTFT), etc. It is usefully applicable as an electrode, especially a transparent electrode in the same field.
- the electrode of the present invention is a solar cell, a secondary battery or a fuel cell, and a plasma display (PDP), a liquid crystal display (TFT-LCD), an organic light emitting diode (OLED), a flexible display and an organic thin film transistor (OTFT), etc. It is usefully applicable as an electrode, especially a transparent electrode in the same field.
- the manufacturing cost can be significantly lowered, and thus, it is regarded as one of the potential transparent electrodes that can replace ITO.
- the substrate is immersed in order of deionized water, acetone, and isopropyl alcohol in this order and washed by sonication for 20 minutes.
- the washed substrates are dried in an oven maintained at 60 ° C.
- the dried substrate is UV-ozone treated for 10 minutes using a UV-ozone processor. This process is for evenly coating the subsequent amine group-containing compound layer.
- a PEI thin film is prepared by applying a solution of PEI dissolved in a concentration of 0.3wt% in deionized water by spin coating on the dried substrate.
- the thickness of the PEI thin film is formed to a thickness of several nm.
- the coating method and the amine group-containing compound used, the solvent of the solution, the concentration can be changed.
- the substrate on which the PEI thin film is formed is dried at 100 ° C. for 20 minutes using a hot plate. At this time, the drying method and temperature can be changed depending on the situation.
- Ag thin film is formed to a thickness of 8nm on the formed PEI thin film by thermal evaporation method. At this time, the formation method of a thin film can be changed.
- a PEDOT: PSS thin film is manufactured using a PEDOT: PSS solution, which is a kind of conductive polymer, using a spin coating method.
- the thickness of the PEDOT: PSS thin film is formed to a thickness of several tens of nm. At this time, the coating method, the polymer used, and the thickness of the PEDOT: PSS thin film can be changed.
- the metal oxide thin film is coated on the substrate by using a solution process or various vapor deposition methods before preparing the amine group-containing compound layer.
- the UV-ozone treatment process of the substrate may be omitted.
- PEI polyethyleneimine
- the “Inventive Electrode 4" was prepared by coating a thin film of DPF again on the Ag metal thin film using a solution process.
- the “Inventive Electrode 9” was prepared by coating a thin film of PEDOT: PSS on the Ag metal thin film again using a solution process.
- PEN Polyethylene naphthalate
- PEI polyethyleneimine
- a TiO x thin film is coated on a polyethylene naphthalate (PEN) substrate by using a solution process and an Ag metal thin film is coated.
- PEN polyethylene naphthalate
- Inventive Electrode 2 and Polymer Electrolyte Layer (PFN) were further added to the glass substrate, including "Inventive Electrode 1" and PEDOT: PSS.
- Inventive Electrode 3 and “Inventive Electrode 4" manufactured by further including a monomolecular electrolyte layer (DPF) have a lower sheet resistance and a higher surface area than "Comparative Electrode 1" formed with only a metal layer on a glass substrate. Permeability was shown.
- the sheet resistances of the "Inventive Electrode 2", the “Inventive Electrode 3", and the “Inventive Electrode 4" are 9.7 ⁇ / ⁇ , 8.9 ⁇ / ⁇ and 9.8 ⁇ / ⁇ , respectively, and are similar to those of the “Inventive Electrode 1”. It was.
- the transmittance was 87.3%, 98.7% and 91.9%, respectively, which is 20% higher than 72.7% of "Inventive Electrode 1", which is “Inventive Electrode 2", “Inventive Electrode 3", “Invention”
- the electrode 4 "is the result of the addition of the antireflection or antireflection effect of the conductive polymer layer, the polymer electrolyte layer and the monomolecular electrolyte layer.
- inventive Electrode 5" manufactured by laminating PEI and metal (Ag) on the PEN substrate
- inventive Electrode 6 manufactured by further including a conductive polymer layer (PEDOT: PSS), and a polymer electrolyte layer (PFN)
- the fabricated “invention electrode 7" has a lower sheet resistance and higher transmittance than the "comparative electrode 2" in which only a metal layer is formed on the PEN substrate.
- the “comparative electrode 2" shows much lower light transmittance than the "invented electrode 5", “invented electrode 6", and “invented electrode 7".
- the "invention electrode 6" and the “invention electrode 7” have a higher light transmittance than the "invention electrode 5" by adding the antireflection or antireflection effect of the conductive polymer layer and the polymer electrolyte layer, respectively.
- PSC polymer solar cell
- FIG. 13 The structure of the PSC and the material used are shown in FIG. 13.
- PSC was prepared by the PTB7-F40 (Poly (thieno [3,4-b] thiophene-alt-benzodithiophene) conjugated polymer and PC [70] BM ([6,6] -phenyl C 71-butyricacid methyl ester) )
- a composite of a fullerene derivative was coated and a thin film was coated on the TiO X (Titanium Sub-oxide) in the order of solution process, and Al metal was deposited on the TiO X thin film.
- VOC Open-circuit Voltage
- JSC Short-circuit Current
- FF Fill factor
- ⁇ Efficiency
- PLED polymer light emitting diode
- the highest brightness was 2626 cd / m 2 and the highest efficiency achieved a performance of 3.95 cd / A. This is a similar result when compared to the highest brightness of 2585 cd / m 2 and the highest efficiency of 3.92 cd / A of devices fabricated using ITO transparent electrodes.
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Abstract
Description
구분 | 구조 | 광투과도(%, @550nm) | 면저항(Ω/□) |
비교전극1 | Glass/Ag | 34.6 | ∞ |
발명전극1 | Glass/PEI/Ag | 72.7 | 10.1 |
발명전극2 | Glass/PEI/Ag/PEDOT:PSS | 87.3 | 9.7 |
발명전극3 | Glass/PEI/Ag/PFN | 94.3 | 7.0 |
발명전극4 | Glass/PEI/Ag/DPF | 91.9 | 9.8 |
구분 | 구조 | 광투과도(%, @550nm) | 면저항(Ω/□) |
비교전극2 | PEN/Ag | 43.2 | ∞ |
발명전극5 | PEN/PEI/Ag | 79.4 | 9.89 |
발명전극6 | PEN/PEI/Ag/PEDOT:PSS | 96.2 | 12.2 |
발명전극7 | PEN/PEI/Ag/PFN | 98.7 | 8.9 |
비교전극3 | PEN/TiOx/Ag | 52.4 | 39.3 |
발명전극10 | PEN/TiOx/PEI/Ag | 77.2 | 9.31 |
발명전극11 | PEN/TiOx/PEI/Ag/PEDOT:PS | 91.4 | 14.4 |
Claims (15)
- 기판;상기 기판 상에 형성된 아민기-함유 화합물층; 및상기 아민기-함유 화합물층 상에 형성된 금속층을 포함하는 광투과도가 우수한 전극.
- 제 1항에 있어서,상기 금속층 상에 형성된 반사방지층을 추가로 포함하는 광투과도가 우수한 전극.
- 제 1항 또는 제 2항에 있어서,상기 기판과 상기 아민기-함유 화합물층 사이에 금속산화물층을 추가로 포함하는 광투과도가 우수한 전극.
- 제 1항에 있어서,상기 기판은 유리, 석영(Quartz), Al2O3, SiC, Si, GaAs, InP로부터 선택되는 무기물 기판; 혹은 켑톤 호일, 폴리이미드(Polyimide, PI), 폴리에테르술폰(polyethersulfone, PES), 폴리아크릴레이트(polyacrylate, PAR), 폴리에테르 이미드(polyetherimide, PEI), 폴리에틸렌 나프탈레이트(polyethylene naphthalate, PEN), 폴리에틸렌 테레프탈레이트(polyethylene terephthalate, PET), 폴리페닐렌 설파이드(polyphenylene sulfide, PPS), 폴리아릴레이트(polyarylate), 폴리카보네이트(polycarbonate, PC), 셀룰로오스 트리 아세테이트(cellulose triacetate, CTA), 셀룰로오스 아세테이트 프로피오네이트(cellulose acetate propionate, CAP)로부터 선택되는 유기물 기판인 것인, 광투과도가 우수한 전극.
- 제 1항에 있어서,상기 아민기-함유 화합물층의 화합물은, 치환기를 가질 수 있는 알킬아민, 치환기를 가질 수 있는 시클로알킬아민, 치환기를 가질 수 있는 아릴아민, 이들 아민으로부터 유래된 아민기를 함유하는 고분자, 또는 상기 아민기를 함유하는 고분자들이 2 이상 조합된 것인, 광투과도가 우수한 전극.
- 제 1항에 있어서,상기 금속층의 금속은 Ag, Cu, Au, Al, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, In, Sn, Hf, Ta, W, Re, Os, Ir, Pt, Tl, Pb, Bi, Ga, Ge, Sb, Ac, Th 및 이들의 조합으로부터 선택되는 것인, 광투과도가 우수한 전극.
- 제 2항에 있어서,상기 반사방지층은 폴리아닐린(Polyaniline), 폴리티오펜(Polythiophene), 폴리에틸렌디옥시티오펜(Polyethylenedioxythiophene, PEDOT), 폴리이미드(Polyimide), 폴리스티렌설포네이트(Polystyrenesulfonate, PSS), 폴리피롤(Polypyrrole), 폴리아세틸렌(Polyacetylene), 폴리(p-페닐렌)[Poly(p-phenylene)], 폴리(p-페닐렌 설파이드)[Poly(p-phenylene sulfide)], 폴리(p-페닐렌 비닐렌)[Poly(p-phenylene vinylene)], 폴리티오펜 폴리(티에닐렌 비닐렌)[(Polythiophene Poly(thienylene vinylene)), 폴리(3,4-에틸렌디옥시티오펜)폴리(스타이렌설포네이트) [Poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate), PEDOT:PSS], 및 이들의 조합으로부터 선택되는 것으로 이루어지는 것인, 광투과도가 우수한 전극.
- 제 2항에 있어서,상기 반사방지층은 폴리[9,9-비스(3'-(N,N-디메틸아미노)프로필)-2,7-플루오렌)-alt-2,7-(9,9-디옥틸플루오렌)](poly [(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)], PFN), 폴리(9,9-비스(4'-술포나토부틸)플루오렌-alt-co-1,4-페닐렌(poly(9,9-bis(4'-sulfonatobutyl)(fluorine-alt-co-1,4-phenylene, PFP), 폴리스티렌설포네이트산(poly(styrenesulfonic acid), PSS), 폴리(p-쿼터페닐렌-2,2'-다이카르복실산)(poly(p-quaterphenylene-2,2'-dicarboxylic acid)), 디페닐 플루오렌 유도체(Diphenyl fluorene derivative, DPF), 테트라키스(1-이미다조릴)보레이트(Tetrakis(1-imidazolyl)borate, Bim4-), 및 이들의 조합으로부터 선택되는 것으로 이루어지는 것인, 광투과도가 우수한 전극.
- 제 1항 내지 제 8항 중 어느 한 항에 따른 광투과도가 우수한 전극을 포함하는 전자소자.
- 기판 상에 아민기-함유 화합물층을 형성하는 단계; 및상기 아민기-함유 화합물층 위에 금속층을 형성하는 단계를 포함하는 광투과도가 우수한 전극을 제조하는 방법.
- 제 10항에 있어서,상기 금속층 위에 반사방지층을 형성하는 단계를 추가로 포함하는, 광투과도가 우수한 전극을 제조하는 방법.
- 제 10항 또는 제 11항에 있어서,상기 기판과 상기 아민기-함유 화합물층 사이에 금속산화물층을 형성하는 단계를 추가로 포함하는, 광투과도가 우수한 전극을 제조하는 방법.
- 제 10항에 있어서,상기 아민기-함유 화합물층은 스핀 코팅법, 롤(roll) 코팅법, 스프레이 코팅법, 플로(flow) 코팅법, 잉크젯 프린팅법, 노즐 프린팅법, 딥 코팅법, 전기영동증착법, 테이프 캐스팅법, 스크린 프린팅법, 패드(pad) 프린팅법, 닥터 블레이드 코팅법, 그래비어 프린팅법, 그래비어 오프셋 프린팅법, 랭뮈어-블로제트(Langmuir-Blogett)법, 스퍼터 증착법, 전자선 증착법, 열증착법, 또는 화학기상 증착법에 의하여 형성되는 것인, 광투과도가 우수한 전극을 제조하는 방법.
- 제 10항에 있어서,상기 금속층은 스퍼터 증착법, 전자선 증착법, 열증착법, 화학기상 증착법, 또는 용액공정에 의한 도포방법에 의하여 형성되는 것인, 광투과도가 우수한 전극을 제조하는 방법.
- 제 11항에 있어서,상기 반사방지층은 스핀 코팅법, 롤(roll) 코팅법, 스프레이 코팅법, 플로(flow) 코팅법, 잉크젯 프린팅법, 노즐 프린팅법, 딥 코팅법, 전기영동증착법, 테이프 캐스팅법, 스크린 프린팅법, 패드(pad) 프린팅법, 닥터 블레이드 코팅법, 그래비어 프린팅법, 그래비어 오프셋 프린팅법, 랭뮈어-블로제트(Langmuir-Blogett)법, 스퍼터 증착법, 전자선 증착법, 열증착법, 또는 화학기상 증착법에 의하여 형성되는 것인, 광투과도가 우수한 전극을 제조하는 방법.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110767660A (zh) * | 2018-07-24 | 2020-02-07 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016130717A1 (en) * | 2015-02-10 | 2016-08-18 | University Of Houston System | Scratch resistant flexible transparent electrodes and methods for fabricating ultrathin metal films as electrodes |
DE102015112879A1 (de) * | 2015-08-05 | 2017-02-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
CN106129251B (zh) * | 2016-07-14 | 2019-05-14 | 华中科技大学 | 一种柔性钙钛矿电池的结构及其制备方法 |
US11107998B2 (en) * | 2016-08-25 | 2021-08-31 | Konica Minolta, Inc. | Transparent electrode and electronic device |
KR101929623B1 (ko) * | 2016-10-28 | 2018-12-14 | 고려대학교 산학협력단 | 플렉시블 전극 및 이의 제조방법 |
KR20180066945A (ko) | 2016-12-09 | 2018-06-20 | 삼성디스플레이 주식회사 | 표시 장치 |
KR101967622B1 (ko) * | 2017-04-18 | 2019-04-10 | 명지대학교 산학협력단 | 볼텍스 기반 적층조립법을 적용한 투명 전극 및 이의 제조방법 |
US11513410B2 (en) * | 2017-05-10 | 2022-11-29 | National Institute For Materials Science | Electrochromic device using organic/metal hybrid polymer and method for producing same |
CN107254664B (zh) * | 2017-06-27 | 2019-05-17 | 河北大学 | 一种超薄银基薄膜、多层复合透明导电薄膜及其制备方法与应用 |
JP6748611B2 (ja) * | 2017-07-12 | 2020-09-02 | 株式会社Joled | 有機el素子、有機el表示パネル、および、有機el表示パネルの製造方法 |
KR102096969B1 (ko) | 2017-11-16 | 2020-04-03 | 고려대학교 산학협력단 | 직물소재 기반 플렉시블 전극 및 이의 제조방법 |
CN109961874B (zh) * | 2017-12-14 | 2020-10-27 | Tcl科技集团股份有限公司 | 一种导电薄膜及其制备方法 |
CN110739408B (zh) * | 2018-07-18 | 2021-06-29 | Tcl科技集团股份有限公司 | 量子点发光二极管及其制备方法 |
KR102259417B1 (ko) * | 2018-08-08 | 2021-06-02 | 일진디스플레이(주) | 폴더블 터치 패널 및 그 제조방법 |
CN112154550A (zh) | 2019-03-05 | 2020-12-29 | 株式会社东芝 | 石墨烯含有膜、其制造方法、石墨烯含有膜层叠体和光电转换元件 |
KR102326739B1 (ko) * | 2019-05-09 | 2021-11-15 | 고려대학교 산학협력단 | 직물소재 기반 플렉시블 알루미늄 전극 및 그 제조방법 |
KR102077534B1 (ko) * | 2019-05-13 | 2020-02-17 | 연세대학교 산학협력단 | 용액 공정 기반 광 소자용 투명 상부전극의 제조 방법 및 이로부터 제조된 광 소자용 투명 상부전극 |
CN113903502A (zh) * | 2019-11-14 | 2022-01-07 | 宸盛光电有限公司 | 具自组装保护层的导电结构及自组装涂层组合物 |
CN111710786A (zh) * | 2020-06-18 | 2020-09-25 | 浙江浙能技术研究院有限公司 | 一种柔性电子传输层成膜工艺 |
KR20220161889A (ko) * | 2021-05-31 | 2022-12-07 | 건국대학교 산학협력단 | 고투과성 및 고이동도의 복합 투명전극을 포함하는 반투명 유기 전자 소자 및 이의 제작 방법 |
KR102710936B1 (ko) * | 2021-11-24 | 2024-09-26 | 성균관대학교산학협력단 | 투명 유연성 전극 및 이의 제조 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010068549A (ko) * | 2000-01-06 | 2001-07-23 | 김순택 | 반사방지막을 가지는 평판표시장치 |
JP2005129496A (ja) * | 2003-10-22 | 2005-05-19 | Hannstar Display Corp | 有機発光素子 |
KR20080073318A (ko) * | 2005-12-05 | 2008-08-08 | 제너럴 일렉트릭 캄파니 | 유기 전자 디바이스용 투명 전극 |
KR101204289B1 (ko) * | 2004-07-23 | 2012-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 전자 기기 및 조명 기기 |
KR20130027991A (ko) | 2011-09-08 | 2013-03-18 | 서울옵토디바이스주식회사 | 투명 전극용 ito층, 이를 포함하는 발광 다이오드 및 그 제조 방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001229737A (ja) * | 2000-02-10 | 2001-08-24 | Fuji Photo Film Co Ltd | 透明導電性フイルムおよびその接地方法 |
CN101343234B (zh) * | 2003-03-20 | 2012-08-15 | 出光兴产株式会社 | 芳香族胺衍生物和用该衍生物制作的有机场致发光元件 |
JP2005019056A (ja) * | 2003-06-24 | 2005-01-20 | Toray Ind Inc | 複合透明導電性基材とそれを用いたディスプレイ |
US7211509B1 (en) * | 2004-06-14 | 2007-05-01 | Novellus Systems, Inc, | Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds |
EP1792893A4 (en) * | 2004-08-31 | 2007-11-21 | Idemitsu Kosan Co | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THIS |
US8017252B2 (en) * | 2005-06-22 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic appliance using the same |
JP2007073498A (ja) * | 2005-08-09 | 2007-03-22 | Idemitsu Kosan Co Ltd | 導電性積層体 |
CN101320107B (zh) * | 2008-07-04 | 2010-04-21 | 友达光电股份有限公司 | 触控式显示面板、彩色滤光片及其制作方法 |
US20110186831A1 (en) * | 2008-08-12 | 2011-08-04 | Idemitsu Kosan Co., Ltd. | Aromatic amine derivative and organic electroluminescence element using same |
JP5539887B2 (ja) * | 2008-09-19 | 2014-07-02 | 株式会社日本触媒 | 導電性微粒子およびこれを用いた異方性導電材料 |
US9536633B2 (en) * | 2009-04-10 | 2017-01-03 | Sumitomo Chemical Company, Limited | Metallic composite and composition thereof |
JP5760334B2 (ja) * | 2009-06-19 | 2015-08-05 | 大日本印刷株式会社 | 有機電子デバイス及びその製造方法 |
GB201011118D0 (en) * | 2010-06-30 | 2010-08-18 | Univ Warwick | Transparent electrodes for semiconductor thin film devices |
WO2012040637A2 (en) * | 2010-09-24 | 2012-03-29 | The Regents Of The University Of California | Nanowire-polymer composite electrodes |
KR20190092492A (ko) * | 2011-10-13 | 2019-08-07 | 캄브리오스 필름 솔루션스 코포레이션 | 금속 나노와이어들을 통합한 전극을 갖는 광전기 디바이스들 |
KR101512412B1 (ko) * | 2013-03-06 | 2015-04-15 | 성균관대학교산학협력단 | 투명 전극 및 이의 제조 방법 |
KR102194819B1 (ko) * | 2013-08-27 | 2020-12-24 | 삼성디스플레이 주식회사 | 유기 발광 소자 |
-
2014
- 2014-08-25 CN CN201480060379.3A patent/CN105684098B/zh active Active
- 2014-08-25 WO PCT/KR2014/007868 patent/WO2015050320A1/ko active Application Filing
- 2014-08-25 EP EP14850547.2A patent/EP3054459B1/en active Active
- 2014-08-25 JP JP2016519970A patent/JP6228297B2/ja active Active
- 2014-08-25 KR KR1020167008658A patent/KR101827352B1/ko active IP Right Grant
- 2014-08-25 US US15/027,184 patent/US9735295B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010068549A (ko) * | 2000-01-06 | 2001-07-23 | 김순택 | 반사방지막을 가지는 평판표시장치 |
JP2005129496A (ja) * | 2003-10-22 | 2005-05-19 | Hannstar Display Corp | 有機発光素子 |
KR101204289B1 (ko) * | 2004-07-23 | 2012-11-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 전자 기기 및 조명 기기 |
KR20080073318A (ko) * | 2005-12-05 | 2008-08-08 | 제너럴 일렉트릭 캄파니 | 유기 전자 디바이스용 투명 전극 |
KR20130027991A (ko) | 2011-09-08 | 2013-03-18 | 서울옵토디바이스주식회사 | 투명 전극용 ito층, 이를 포함하는 발광 다이오드 및 그 제조 방법 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3054459A4 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110767660A (zh) * | 2018-07-24 | 2020-02-07 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板 |
CN110767660B (zh) * | 2018-07-24 | 2022-09-16 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板 |
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CN105684098B (zh) | 2018-10-02 |
JP6228297B2 (ja) | 2017-11-08 |
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EP3054459B1 (en) | 2018-07-11 |
JP2016535918A (ja) | 2016-11-17 |
CN105684098A (zh) | 2016-06-15 |
KR20160061346A (ko) | 2016-05-31 |
US9735295B2 (en) | 2017-08-15 |
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US20160233357A1 (en) | 2016-08-11 |
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