WO2014182139A1 - 광활성층, 이를 포함하는 유기 태양 전지 및 이의 제조 방법 - Google Patents
광활성층, 이를 포함하는 유기 태양 전지 및 이의 제조 방법 Download PDFInfo
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- WO2014182139A1 WO2014182139A1 PCT/KR2014/004220 KR2014004220W WO2014182139A1 WO 2014182139 A1 WO2014182139 A1 WO 2014182139A1 KR 2014004220 W KR2014004220 W KR 2014004220W WO 2014182139 A1 WO2014182139 A1 WO 2014182139A1
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- surface energy
- photoactive layer
- solar cell
- electron acceptor
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- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000005246 nonafluorobutyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000001425 triazolyl group Chemical group 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present specification relates to a photoactive layer, an organic solar cell including the same, and a method of manufacturing the same.
- the types of solar cells known to date include solar cells using monocrystalline or polycrystalline bulk silicon, thin film solar cells using amorphous, microcrystalline, or polycrystalline silicon, compound semiconductor solar cells, fuel-sensitized solar cells, and organic polymer solar cells. Very diverse
- Organic thin film solar cell technology converts solar energy into electrical energy using polymer or low molecular organic semiconductor. Its thin-film device, large-area device, and roll- It is a next-generation technology with both ultra-low cost and versatile mass production specifications such as flexible elements by a roll-to-roll method.
- an organic solar cell typically includes a photoactive layer having a junction structure of an electron donor and an electron acceptor material.
- US Patent Publication No. 2006-0011233 discloses poly-3-hexylthiophene (P3HT) as an electron donor and [6,6] -phenyl-C61-butyl acid methyl ester as an electron acceptor. 6,6] -phenyl-C61-butyric acid methyl ester (PCBM), and an organic solar cell in which a photoactive layer is introduced by spin coating are disclosed, but their energy conversion efficiency is not so high.
- P3HT poly-3-hexylthiophene
- PCBM -phenyl-C61-butyric acid methyl ester
- the present specification relates to a photoactive layer, an organic solar cell including the same, and a method of manufacturing the same.
- the photoactive layer comprises a compound comprising an electron acceptor, an electron donor and a functional group that reduces surface energy.
- a photoactive layer including an electron acceptor and an electron donor, wherein the photoactive layer further includes a compound further comprising a functional group for reducing surface energy of the electron acceptor.
- preparing a substrate Forming a first electrode in one region of the substrate; Forming an organic material layer including a photoactive layer on the first electrode; And forming a second electrode on the organic layer, wherein the photoactive layer comprises an electron acceptor, an electron donor, and a compound including a functional group that reduces surface energy of the electron acceptor.
- the photoactive layer comprises an electron acceptor, an electron donor, and a compound including a functional group that reduces surface energy of the electron acceptor.
- the organic solar cell according to the exemplary embodiment of the present specification introduces a compound including a functional group to reduce the surface energy of the electron acceptor in the photoactive layer, thereby uniformly distributing the electron acceptor and the electron donor in the photoactive layer.
- the morphology of the photoactive layer can be adjusted, so that the short circuit current density and fill factor can be increased. Therefore, an organic solar cell of high efficiency can be provided.
- 1 is a view showing the relative ratio of sulfur / oxygen atoms on the surface of the P3HT / PCB film according to the content of the compound containing a functional group to reduce the surface energy of the electron acceptor.
- the photoactive layer comprises a compound comprising an electron acceptor, an electron donor and a functional group that reduces surface energy.
- the electron donor generally has a negatively charged or unshared electron pair, and means to donate an electron to a portion lacking a positive charge or an electron pair.
- electron donors can transfer electrons to electron acceptors with high electronegativity due to the rich electron-retaining properties of the molecules themselves, even if they are negatively charged but do not have unshared pairs of electrons.
- an electron acceptor means to accept electrons from an electron donor.
- the surface energy means a surface tension of a solid, and may be calculated by measuring a contact angle by dropping a specific solvent.
- the method of obtaining surface energy by measuring a contact angle is a method generally used in the art.
- the compound including the functional group that reduces the surface energy does not bind with the electron acceptor or the electron donor, and thus does not affect the function of the electron donor or the electron acceptor.
- the compound containing a functional group to reduce the surface energy does not affect the function of the electron acceptor or electron donor.
- compounds containing functional groups that reduce the surface energy do not serve to accept or donate electrons and reduce surface energy.
- the compound including the functional group to reduce the surface energy has affinity with the electron acceptor, compared to the electron donor, it is possible to selectively reduce the surface energy of the electron acceptor.
- the compound including a functional group for reducing the surface energy reduces the surface energy of the electron acceptor.
- the surface energy of the electron acceptor When the surface energy of the electron acceptor is selectively reduced, the surface energy is relatively low, thereby preventing the electron donor from being concentrated on the surface of the photoactive layer.
- the electron acceptor and the electron donor can be uniformly distributed in the photoactive layer, thereby providing an appropriate morphology of the photoactive layer. In this case, a high efficiency organic solar cell can be provided.
- the surface energy of the electron acceptor when the compound containing a functional group for reducing the surface energy is added, the surface energy of the electron acceptor is different by 0.1% to 30% relative to the surface energy of the electron donor.
- the compound including a functional group that reduces the surface energy is a solid compound at room temperature, and remains in the photoactive layer even after the photoactive layer is prepared.
- the compound including the functional group for reducing the surface energy does not act as a solvent for dissolving the electron acceptor and the electron donor.
- the compound containing a functional group that reduces the surface energy remains in the photoactive layer, thereby uniformly distributing the electron acceptor and the electron donor, thereby controlling the morphology of the photoactive layer.
- the compound including a functional group that reduces the surface energy is 0.25% by weight to 1% by weight relative to the weight of the electron acceptor.
- the surface energy of the electron acceptor can be adjusted similarly to the surface energy of the electron donor. Therefore, the surface energy difference between the electron acceptor and the electron donor may be reduced, and thus the surface roughness of the photoactive layer may be reduced by uniformly distributing the electron acceptor and the electron donor in the photoactive layer.
- 1 is a view showing the relative ratio of sulfur / oxygen atoms on the surface of the P3HT / PCB film according to the content of the compound containing a functional group to reduce the surface energy of the electron acceptor.
- the ratio of sulfur atoms in P3HT and oxygen atoms in PCBM was measured by Secondary Ion Mass Spectroscopy (SIMS).
- the film surface of the photoactive layer which does not contain a compound containing a functional group that reduces surface energy, has a ratio of about two times the sulfur / oxygen atom. This can confirm that the electron donor (P3HT) is present on the surface. It can be seen that the ratio of sulfur / oxygen decreases when it contains a compound containing a functional group that reduces surface energy.
- compounds containing functional groups that reduce surface energy may be found to have a similar content of sulfur and oxygen on the surface of the photoactive layer within the range of 0.25 wt% to 1 wt%. This may prove that the electron acceptor and the electron donor are uniformly distributed.
- the functional group for reducing the surface energy contains at least one fluorine group (F).
- the functional group for reducing the surface energy includes a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, wherein the alkyl group is substituted with at least one fluorine group.
- the compound including a functional group to reduce the surface energy provides a compound represented by the following formula (1).
- Ar is a substituted or unsubstituted aryl group; Or a substituted or unsubstituted heterocyclic group,
- L is a direct bond; Substituted or unsubstituted divalent amide group; Substituted or unsubstituted alkylene group; Substituted or unsubstituted arylene group; Or a substituted or unsubstituted divalent heterocyclic group containing one or more of N, O and S atoms,
- R is an alkyl group having 1 to 20 carbon atoms substituted with at least one fluorine group.
- Ar is a substituted or unsubstituted naphthyl group.
- Ar is a substituted or unsubstituted fluorenyl group.
- Ar is a substituted or unsubstituted phenyl group.
- L is a substituted or unsubstituted divalent amide group.
- L is a substituted or unsubstituted alkylene group.
- L is an alkylene group substituted with a fluorine group.
- L is a direct bond
- R is an alkyl group substituted with at least one fluorine group.
- R is a heptafluoropropyl group.
- R is a nonafluorobutyl group.
- the compound represented by Chemical Formula 1 provides a compound represented by any one of the following Chemical Formulas 1-1 to 1-5, but is not limited thereto.
- a, b and d are each an integer of 0 to 7,
- c and e are each an integer of 0 to 5
- R 1 to R 5 , R ′ and R ′′ are the same as or different from each other, and each independently hydrogen; a substituted or unsubstituted alkyl group; a substituted or unsubstituted alkoxy group; a substituted or unsubstituted alkenyl group; a substituted or unsubstituted Or an aryl group or a substituted or unsubstituted heterocyclic group including one or more of N, O, and S atoms.
- substituted or unsubstituted is halogen, nitrile, nitro, hydroxy, alkyl, cycloalkyl, alkenyl, alkoxy, aryloxy, thiol, alkylthio, allylthio, sulfoxy, Alkyl sulfoxy, aryl sulfoxy, silyl, boron, arylamine, aralkylamine, alkylamine, aryl, fluorenyl, carbazole, arylalkyl, arylalkenyl, heterocyclic and acetylene groups It means that it is substituted with one or more substituents selected from the group consisting of, or does not have any substituents.
- the heterocyclic group is a heterocyclic group containing O, N or S as a hetero atom, and the carbon number is not particularly limited, but is preferably 2-60 carbon atoms.
- the heterocyclic group are thiophene group, furan group, pyrrole group, imidazole group, thiazole group, oxazole group, oxadiazole group, triazole group, pyridyl group, bipyridyl group, triazine group, acridil group, pyridazine group , Quinolinyl group, isoquinoline group, indole group, carbazole group, benzoxazole group, benzoimidazole group, benzothiazole group, benzocarbazole group, benzothiophene group, dibenzothiophene group, benzofuranyl group, dibenzofuran And the like, but are not limited thereto.
- the alkyl group may be linear, branched or cyclic.
- carbon number of an alkyl group is not specifically limited, It is preferable that it is C1-C25.
- methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, sec-butyl group, t-butyl group, n-pentyl group, iso-pentyl group, neo-pentyl group, n-hex It may be a real group, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, etc., but is not limited thereto.
- the alkenyl group may be linear or branched, preferably an alkenyl group having 2 to 40 carbon atoms, and specifically, an alkenyl substituted with an aryl group such as stilbenyl, styrenyl, or the like. Groups are preferred but not limited to these.
- the alkoxy group may be linear, branched or cyclic. Although carbon number of an alkoxy group is not specifically limited, It is preferable that it is C1-C25. Specifically, it may be a methoxy group, ethoxy group, n-propyloxy group, iso-propyloxy group, n-butyloxy group, cyclopentyloxy group and the like, but is not limited thereto.
- the aryl group may be a monocyclic aryl group or a polycyclic aryl group, and includes a case where an alkyl group having 1 to 25 carbon atoms or an alkoxy group having 1 to 25 carbon atoms is substituted.
- the aryl group in the present specification may mean an aromatic ring.
- the aryl group is a monocyclic aryl group
- carbon number is not particularly limited, but preferably 6 to 25 carbon atoms.
- the monocyclic aryl group may be a phenyl group, biphenyl group, terphenyl group, stilbenyl group and the like, but is not limited thereto.
- Carbon number is not particularly limited when the aryl group is a polycyclic aryl group. It is preferable that it is C10-24.
- the polycyclic aryl group may be naphthyl group, anthryl group, phenanthryl group, pyrenyl group, perylenyl group, chrysenyl group, fluorenyl group, etc., but is not limited thereto.
- the amide group may be substituted with one or two nitrogen atoms of an amide group, hydrogen, a linear, branched or cyclic alkyl group having 1 to 25 carbon atoms, or an aryl group having 6 to 25 carbon atoms. Specifically, it may be a compound of the following structural formula, but is not limited thereto.
- a divalent amide group, an arylene group, or a divalent heterocyclic group means that there are two bonding positions in the amide group, the aryl group, and the heterocyclic group, respectively.
- the description of the above-described amide group, aryl group, heterocyclic group can be applied except that they are each divalent group.
- the electron acceptor is a fullerene derivative or a nonfullerene derivative.
- the fullerene derivative is selected from the group consisting of a C 60 fullerene derivative, a C 70 fullerene derivative, a C 76 fullerene derivative, a C 78 fullerene derivative, a C 84 fullerene derivative, and a C 90 fullerene derivative.
- the nonfullerene derivative has an LUMO energy level of -2.0 to -6.0 eV. In another exemplary embodiment, the nonfullerene derivative has a LUMO energy level of -2.5 to -5.0 eV. In another exemplary embodiment, the nonfullerene derivative has an LUMO energy level of -3.5 to -4.5 eV.
- the electron acceptor is [6,6] -phenyl C-butyric acid methyl ester (PCBM).
- the electron donor is poly (3-hexylthiophene) (P3HT).
- the electron acceptor and the electron donor of the photoactive layer may form a bulk hetero junction (BHJ).
- BHJ bulk hetero junction
- the thickness of the photoactive layer is 60 nm to 300 nm.
- the thickness of the photoactive layer means a width between one surface of the photoactive layer and the surface opposite thereto.
- the surface roughness of the photoactive layer provides an organic solar cell having a reduction of 30% to 55% as compared with the case of not including a compound including a functional group that reduces surface energy.
- the surface roughness of the photoactive layer is affected by the heat treatment temperature of the photoactive layer. Surface roughness is measured herein using atomic force microscopy (AFM).
- roughness refers to an irregular component in which the inherent properties of the photoactive layer manufacturing process left on the surface are present on the surface.
- the surface roughness of the surface of the photoactive layer may cause high contact resistance.
- the surface roughness may be reduced by adding a compound including a functional group that reduces surface energy, thereby reducing the domain size of the electron donor and the electron acceptor.
- the surface energy of the electron acceptor may be reduced by 15% to 55% as compared to the case where the compound containing the functional group for reducing the surface energy is not included.
- the surface energy of the electron acceptor herein is 30 mN / m to 48 mN / m.
- the weight ratio of the electron donor and the electron acceptor is 1: 0.5 to 1: 5.
- the organic solar cell further includes at least one of a hole transport layer and a hole injection layer between the first electrode and the photoactive layer.
- the organic solar cell further includes an electron transport layer between the second electrode and the photoactive layer.
- the organic solar cell further includes an electron transport layer or a hole transport layer between the second electrode and the photoactive layer.
- a photoactive layer including an electron acceptor and an electron donor, wherein the photoactive layer further includes a compound including a functional group for reducing surface energy.
- the compound including a functional group for reducing the surface energy reduces the surface energy of the electron acceptor.
- the compound containing a functional group for reducing the surface energy of the electron acceptor is 0.25% by weight to 1% by weight relative to the weight of the electron acceptor.
- the surface roughness of the photoactive layer is reduced by 30% to 55% compared to the case that does not contain a compound containing a functional group to reduce the surface energy.
- the surface energy of the electron acceptor is reduced by 15% to 55% compared to the case that does not contain a compound containing a functional group to reduce the surface energy.
- the surface energy of the electron acceptor is different by 0.1% to 30% with respect to the surface energy of the electron donor.
- the first electrode may be an anode electrode or a cathode electrode.
- the second electrode may be a cathode electrode and may be an anode electrode.
- the organic solar cell may be arranged in the order of the anode electrode, the photoactive layer and the cathode electrode, and may be arranged in the order of the cathode electrode, the photoactive layer and the anode electrode, but is not limited thereto.
- the organic solar cell may be arranged in order of an anode electrode, a hole transport layer, a photoactive layer, an electron transport layer, and a cathode electrode, and in order of a cathode electrode, an electron transport layer, a photoactive layer, a hole transport layer, and an anode electrode. It may be arranged, but is not limited thereto.
- the organic solar cell may be arranged in order of an anode electrode, a buffer layer, a photoactive layer, and a cathode electrode.
- preparing a substrate Forming a first electrode in one region of the substrate; Forming an organic material layer including a photoactive layer on the first electrode; And forming a second electrode on the organic material layer, wherein the photoactive layer includes a compound including an electron acceptor, an electron donor, and a functional group that reduces surface energy of the electron acceptor. It provides a method for producing a solar cell.
- the compound containing a functional group for reducing the surface energy of the electron acceptor is 0.25% by weight to 1% by weight relative to the weight of the electron acceptor.
- the organic solar cell of the present specification may be manufactured by materials and methods known in the art, except that the photoactive layer includes a compound including a functional group that reduces surface energy.
- the substrate may be a glass substrate or a transparent plastic substrate having excellent transparency, surface smoothness, ease of handling, and waterproofness, but is not limited thereto, and the substrate may be any substrate commonly used in organic solar cells. Specifically, there are glass or polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polypropylene (PP), polyimide (PI), and triacetyl cellulose (TAC). It is not limited to this.
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PP polypropylene
- PI polyimide
- TAC triacetyl cellulose
- the anode electrode may be a transparent and excellent conductive material, but is not limited thereto.
- Metals such as vanadium, chromium, copper, zinc and gold or alloys thereof;
- Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO); ZnO: Al or SNO 2 : combination of a metal and an oxide such as Sb;
- Conductive polymers such as poly (3-methylthiophene), poly [3,4- (ethylene-1,2-dioxy) thiophene] (PEDOT), polypyrrole and polyaniline, and the like, but are not limited thereto.
- the method of forming the anode electrode is not particularly limited, but is applied to one surface of the substrate or coated in a film form using, for example, sputtering, E-beam, thermal deposition, spin coating, screen printing, inkjet printing, doctor blade or gravure printing. It can be formed by.
- the anode electrode When the anode electrode is formed on the substrate, it may be subjected to cleaning, water removal, and hydrophilic modification.
- the patterned ITO substrate is sequentially cleaned with a detergent, acetone, isopropyl alcohol (IPA), and then dried in a heating plate for 1 to 30 minutes at 100 to 150 ° C., preferably at 120 ° C. for 10 minutes to remove moisture.
- IPA isopropyl alcohol
- the surface of the substrate is modified to be hydrophilic.
- the bonding surface potential can be maintained at a level suitable for the surface potential of the photoactive layer.
- Pretreatment techniques for anode electrodes include a) surface oxidation using parallel planar discharges, b) oxidation of surfaces through ozone generated using UV ultraviolet light in a vacuum, and c) oxygen radicals generated by plasma. And oxidation using the same method.
- One of the above methods can be selected depending on the state of the anode electrode or the substrate. In any case, however, it is desirable to prevent oxygen escape from the surface of the anode electrode or the substrate and to minimize the residual of moisture and organic matter in common. At this time, the substantial effect of the pretreatment can be maximized.
- a method of oxidizing a surface through ozone generated using UV may be used.
- the patterned ITO substrate is baked on a hot plate and dried well, then put into a chamber, and a UV lamp is activated to cause oxygen gas to react with UV light.
- the patterned ITO substrate can be cleaned.
- the surface modification method of the patterned ITO substrate in this specification does not need to be specifically limited, Any method may be used as long as it is a method of oxidizing a substrate.
- the cathode electrode may be a metal having a small work function, but is not limited thereto.
- metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin and lead or alloys thereof; LiF / Al, LiO 2 / Al, LiF / Fe, Al: Li, Al: BaF 2 , Al: BaF 2
- It may be a material of a multi-layer structure such as, but is not limited thereto.
- the cathode electrode may be formed by being deposited in a thermal evaporator showing a vacuum degree of 5 ⁇ 10 ⁇ 7 torr or less, but is not limited thereto.
- the hole transport layer and / or electron transport layer material plays a role of efficiently transferring electrons and holes separated in the photoactive layer to the electrode, and the material is not particularly limited.
- the hole transport layer material may be PEDOT: PSS (Poly (3,4-ethylenediocythiophene) doped with poly (styrenesulfonic acid)), molybdenum oxide (MoO x ); Vanadium oxide (V 2 O 5 ); Nickel oxide (NiO); Tungsten oxide (WO x ), and the like, but is not limited thereto.
- PSS Poly (3,4-ethylenediocythiophene) doped with poly (styrenesulfonic acid)
- MoO x molybdenum oxide
- V 2 O 5 Vanadium oxide
- NiO Nickel oxide
- WO x Tungsten oxide
- the electron transport layer material may be electron-extracting metal oxides, specifically, a metal complex of 8-hydroxyquinoline; Complexes including Alq 3 ; Metal complexes including Liq; LiF; Ca; Titanium oxide (TiO x ); Zinc oxide (ZnO); And cesium carbonate (Cs 2 CO 3 ), and the like, but is not limited thereto.
- metal oxides specifically, a metal complex of 8-hydroxyquinoline; Complexes including Alq 3 ; Metal complexes including Liq; LiF; Ca; Titanium oxide (TiO x ); Zinc oxide (ZnO); And cesium carbonate (Cs 2 CO 3 ), and the like, but is not limited thereto.
- the photoactive layer may be formed by dissolving a photoactive material, such as an electron donor and / or an electron acceptor, in an organic solvent and then spin coating, dip coating, screen printing, spray coating, doctor blade, brush painting, or the like. It is not limited to the method.
- a photoactive material such as an electron donor and / or an electron acceptor
- the surface energy was determined by measuring contact angles for two solvents of ionic water and glycerol.
- the surface energy of the electron donor is 32.3 mN / m (2,2,3,3,4,4,4-heptafluoro-N-phenyl-butylamide)
- 2,2,3,3,4,4,4-heptafluoro-N-phenyl-butylamide is added in an amount of 0.25 wt% to 1 wt%, it can be seen that the surface energy is similar to that of the electron donor. Since the surface energy of the electron donor and the electron acceptor are similar, the electron donor and the electron acceptor may have a uniform distribution in the photoactive layer.
- the change of the surface roughness of the photoactive layer according to the addition amount of the surface energy is shown in Table 2 below.
- the roughness was measured using Atomic Force Microscopy (AFM).
- the photoactive layer including the electron donor (P3HT) and the electron acceptor (PCBM) has a large domain size after heat treatment, thereby reducing the contact area between the electron acceptor and the electron donor.
- the ratio of sulfur atoms in the electron donor (P3HT) and oxygen atoms in the electron acceptor (PCBM) was determined by Secondary Ion Mass Spectroscopy (SIMS).
- 1 is a view showing the relative ratio of sulfur / oxygen atoms on the surface of the P3HT / PCB film according to the content of the compound containing a functional group to reduce the surface energy of the electron acceptor.
- the film surface of the photoactive layer which does not contain a compound containing a functional group that reduces surface energy, has a ratio of about two times the sulfur / oxygen atom. This can confirm that the electron donor (P3HT) is present on the surface. It can be seen that the ratio of sulfur / oxygen decreases when it contains a compound containing a functional group that reduces surface energy.
- PEDOT poly (4-styrenesulfonate)
- IPA isopropyl alcohol
- the electron donor was poly (3-hexylthiophene) (Poly-3-hexylthiophene (P3HT)) and the electron acceptor was [6,6] -phenyl C60-butyric acid methyl ester (PCBM). 2,2,3,3,4,4,4-heptafluoro-N-phenyl-butylamide (2,2,3,3) in a photoactive layer material in which P3HT and PCBM 60 were mixed in a 1: 1 weight ratio.
- the optical short-circuit current density (J sc ), photo-opening voltage (V oc ), fill factor (FF), and energy conversion efficiency of the organic solar cell are shown in Table 3 below.
- the content refers to the content of 2,2,3,3,4,4,4-heptafluoro-N-phenyl-butylamide relative to the electron acceptor (PCBM), and J sc is the short-circuit current density, FF Is the fill factor and PCE is the photoelectric conversion efficiency.
- the open-circuit and short-circuit currents are the X- and Y-axis intercepts in the four quadrants of the voltage-current density curve, respectively. The higher these two values, the higher the efficiency of the solar cell.
- the fill factor is the area of the rectangle drawn inside the curve divided by the product of the short circuit current and the open voltage. By dividing these three values by the intensity of the emitted light, the energy conversion efficiency can be determined, and higher values are preferable.
- the photoelectric conversion efficiency of Comparative Example 1 was higher than that of 3.2%, in Examples 1 to 6 to which a compound containing a functional group for reducing surface energy was added.
- the photoelectric conversion efficiency is increased by about 25% or more.
- the short-circuit current density also increases when a compound containing a functional group that reduces surface energy is added.
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Abstract
Description
표면 에너지를 감소시키는 작용기를 포함하는 화합물의 첨가량(wt%) | PCBM의 표면 에너지(mN/m) |
0 | 44.6 |
0.25 | 36.7 |
0.5 | 34.5 |
1 | 30.6 |
3 | 27.5 |
5 | 23.6 |
10 | 20.2 |
표면 에너지를 감소시키는 작용기를 포함하는 화합물의 첨가량(wt%) | 광활성층의 표면 거칠기(nm) |
0(PCBM/P3HT 단독 film) | 5.92 |
0.25 | 3.57 |
0.5 | 2.58 |
1 | 2.81 |
3 | 3.45 |
5 | 4.31 |
10 | 6.16 |
함량 (wt%) | Jsc(mA/cm2) | Voc(V) | FF (%) | PCE (%) | |
실시예 1 | 0.25 | 11.6 | 0.63 | 54.9 | 4.0 |
실시예 2 | 0.5 | 12.6 | 0.63 | 55.8 | 4.4 |
실시예 3 | 1 | 12.5 | 0.63 | 55.2 | 4.3 |
실시예 4 | 3 | 11.1 | 0.63 | 54.2 | 3.8 |
실시예 5 | 5 | 11.0 | 0.63 | 55.7 | 3.8 |
실시예 6 | 10 | 11.0 | 0.63 | 50.7 | 3.5 |
비교예 1 | 0 | 10.5 | 0.63 | 49.4 | 3.2 |
Claims (20)
- 제1 전극;제1 전극과 대향하여 구비되는 제2 전극; 및상기 제1 전극과 상기 제2 전극 사이에 배치되는 광활성층을 포함하는 유기 태양 전지로서,상기 광활성층은 전자수용체, 전자공여체 및 표면 에너지를 감소시키는 작용기를 포함하는 화합물을 포함하는 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 표면 에너지를 감소시키는 작용기를 포함하는 화합물은 전자수용체의 표면 에너지를 감소시키는 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 표면 에너지를 감소시키는 작용기는 적어도 하나의 플루오르기(F)를 함유하는 기인 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 표면 에너지를 감소시키는 작용기를 포함하는 화합물은 상기 전자수용체의 중량 대비 0.25 중량% 내지 1 중량%인 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 전자수용체의 표면 에너지는 상기 전자공여체의 표면 에너지에 대하여 0.1 % 내지 30 %만큼 차이가 나는 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 표면 에너지를 감소시키는 작용기를 포함하는 화합물은 상온에서 고체인 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 표면 에너지를 감소시키는 작용기를 포함하는 화합물은 하기 화학식 1로 표시되는 화합물인 것인 유기 태양 전지:[화학식 1]화학식 1에 있어서,Ar은 치환 또는 비치환된 아릴기; 또는 치환 또는 비치환된 헤테로고리기이고,L은 직접결합; 치환 또는 비치환된 2가의 아미드기; 치환 또는 비치환된 알킬렌기; 치환 또는 비치환된 아릴렌기; 또는 N, O 및 S 원자 중 1개 이상을 포함하는 치환 또는 비치환된 2가의 헤테로고리기이며,R은 적어도 하나의 플루오르기로 치환된 탄소수 1 내지 20의 알킬기이다.
- 청구항 7에 있어서,상기 화학식 1로 표시되는 화합물은 하기 화학식 1-1 내지 1-5 중 어느 하나로 표시되는 화합물인 것인 유기 태양 전지:[화학식 1-1][화학식 1-2][화학식 1-3][화학식 1-4][화학식 1-5]화학식 1-1 내지 1-5에 있어서,a, b 및 d는 각각 0 내지 7의 정수이고,c 및 e는 각각 0 내지 5의 정수이며,R1 내지 R5, R' 및 R"는 서로 동일하거나 상이하고 각각 독립적으로 수소; 치환 또는 비치환된 알킬기; 치환 또는 비치환된 알콕시기; 치환 또는 비치환된 알케닐기; 치환 또는 비치환된 아릴기; 또는 N, O 및 S 원자 중 1개 이상을 포함하는 치환 또는 비치환된 헤테로고리기이다.
- 청구항 1에 있어서,상기 광활성층의 두께는 60 nm 내지 300 nm 인 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 광활성층의 표면 거칠기는 상기 표면 에너지를 감소시키는 작용기를 포함하는 화합물을 포함하지 않은 경우에 비하여 30 % 내지 55 % 감소한 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 전자 공여체와 상기 전자 수용체의 중량비율은 1:0.5 내지 1:5인 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 유기 태양 전지는 상기 제1 전극과 상기 광활성층 사이에 정공수송층 및 정공 주입층 중에서 하나 이상을 더 포함하는 것인 유기 태양 전지.
- 청구항 1에 있어서,상기 유기 태양 전지는 상기 제2 전극과 상기 광활성층 사이에 전자수송층 또는 정공수송층을 더 포함하는 것인 유기 태양 전지.
- 전자수용체 및 전자공여체를 포함하는 광활성층으로서,상기 광활성층은 표면 에너지를 감소시키는 작용기를 포함하는 화합물을 더 포함하는 것인 광활성층.
- 청구항 14에 있어서,상기 표면 에너지를 감소시키는 작용기를 포함하는 화합물은 전자수용체의 표면 에너지를 감소시키는 것인 광활성층.
- 청구항 14에 있어서,상기 표면 에너지를 감소시키는 작용기를 포함하는 화합물은 상기 전자수용체의 중량 대비 0.25 중량% 내지 1 중량%인 것인 광활성층.
- 청구항 14에 있어서,상기 광활성층의 표면 거칠기는 표면 에너를 감소시키는 작용기를 포함하는 화합물을 포함하지 않은 경우에 비하여 30 % 내지 55 % 감소한 것인 광활성층.
- 청구항 14에 있어서,상기 전자수용체의 표면 에너지는 상기 전자공여체의 표면 에너지에 대하여 0.1 % 내지 30 %만큼 차이가 나는 것인 광활성층.
- 기판을 준비하는 단계;상기 기판의 일 영역에 제1 전극을 형성하는 단계;상기 제1 전극 상부에 광활성층을 포함하는 유기물층을 형성하는 단계; 및상기 유기물층 상부에 제2 전극을 형성하는 단계를 포함하고,상기 광활성층은 전자수용체, 전자공여체 및 상기 전자수용체의 표면 에너지를 감소시키는 작용기를 포함하는 화합물을 포함하는 것인 유기 태양 전지의 제조 방법.
- 청구항 19에 있어서,상기 전자수용체의 표면 에너지를 감소시키는 작용기를 포함하는 화합물은 상기 전자수용체의 중량 대비 0.25 중량% 내지 1 중량%인 것인 유기 태양 전지의 제조 방법.
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060011233A1 (en) | 2002-05-22 | 2006-01-19 | Serdar Sariciftci | Method for the post-treatment of a photovoltaic cell |
JP2008510868A (ja) * | 2004-08-25 | 2008-04-10 | チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド | 表面改質剤 |
KR20100094475A (ko) * | 2007-10-26 | 2010-08-26 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 격납된 층을 제조하기 위한 방법 및 재료, 및 이를 사용하여 제조된 소자 |
JP2011091131A (ja) * | 2009-10-21 | 2011-05-06 | Kaneka Corp | 結晶シリコン系太陽電池の製造方法 |
KR20120132656A (ko) * | 2011-05-27 | 2012-12-07 | 포항공과대학교 산학협력단 | 높은 일함수를 가지는 고분자 전극을 채용한 단순화된 유기 전자 소자 |
KR20130044663A (ko) * | 2011-10-24 | 2013-05-03 | 서강대학교산학협력단 | 전하착체 화합물을 사용한 유기태양전지 및 그 제조방법 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7365360B2 (en) | 2004-05-11 | 2008-04-29 | Lg. Chem, Ltd. | Organic electronic device |
JP4322789B2 (ja) * | 2004-12-06 | 2009-09-02 | 株式会社リコー | 画像形成装置 |
US20080149879A1 (en) | 2005-02-25 | 2008-06-26 | Fabien Jean Brand | Fluorinated Compounds |
KR100868863B1 (ko) | 2006-04-10 | 2008-11-13 | 주식회사 엘지화학 | 신규한 축합고리 화합물 및 이를 이용한 유기전자소자 |
TW200933951A (en) * | 2007-10-26 | 2009-08-01 | Du Pont | Process for making contained layers and devices made with same |
WO2009113450A1 (ja) * | 2008-03-12 | 2009-09-17 | 東レ株式会社 | 光起電力素子、活性層材料および光起電力素子の製造方法 |
JP5310230B2 (ja) * | 2009-04-23 | 2013-10-09 | コニカミノルタ株式会社 | 有機光電変換素子 |
WO2011052511A1 (ja) | 2009-10-29 | 2011-05-05 | 住友化学株式会社 | 有機光電変換素子 |
JP5643572B2 (ja) * | 2009-12-09 | 2014-12-17 | ダイキン工業株式会社 | フラーレン誘導体、それを含有する電荷移動材料、それを含有するn型半導体材料、およびそれを含有するn型半導体薄膜 |
JP5692228B2 (ja) * | 2010-07-02 | 2015-04-01 | コニカミノルタ株式会社 | 有機光電変換素子およびそれを用いた太陽電池 |
EP2697283A4 (en) * | 2011-04-15 | 2015-12-16 | Univ Chicago | SEMICONDUCTOR POLYMERS |
-
2013
- 2013-05-10 KR KR1020130053376A patent/KR101563048B1/ko active IP Right Grant
-
2014
- 2014-05-12 JP JP2016512845A patent/JP6161799B2/ja active Active
- 2014-05-12 EP EP14794700.6A patent/EP2985801B1/en active Active
- 2014-05-12 WO PCT/KR2014/004220 patent/WO2014182139A1/ko active Application Filing
- 2014-05-12 CN CN201480026307.7A patent/CN105190927B/zh active Active
- 2014-05-12 US US14/889,315 patent/US9923144B2/en active Active
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060011233A1 (en) | 2002-05-22 | 2006-01-19 | Serdar Sariciftci | Method for the post-treatment of a photovoltaic cell |
JP2008510868A (ja) * | 2004-08-25 | 2008-04-10 | チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド | 表面改質剤 |
KR20100094475A (ko) * | 2007-10-26 | 2010-08-26 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 격납된 층을 제조하기 위한 방법 및 재료, 및 이를 사용하여 제조된 소자 |
JP2011091131A (ja) * | 2009-10-21 | 2011-05-06 | Kaneka Corp | 結晶シリコン系太陽電池の製造方法 |
KR20120132656A (ko) * | 2011-05-27 | 2012-12-07 | 포항공과대학교 산학협력단 | 높은 일함수를 가지는 고분자 전극을 채용한 단순화된 유기 전자 소자 |
KR20130044663A (ko) * | 2011-10-24 | 2013-05-03 | 서강대학교산학협력단 | 전하착체 화합물을 사용한 유기태양전지 및 그 제조방법 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2985801A4 |
Also Published As
Publication number | Publication date |
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JP2016519440A (ja) | 2016-06-30 |
KR20140133331A (ko) | 2014-11-19 |
CN105190927B (zh) | 2017-08-04 |
US9923144B2 (en) | 2018-03-20 |
KR101563048B1 (ko) | 2015-10-30 |
CN105190927A (zh) | 2015-12-23 |
EP2985801A1 (en) | 2016-02-17 |
US20160087214A1 (en) | 2016-03-24 |
EP2985801B1 (en) | 2019-08-28 |
EP2985801A4 (en) | 2016-12-14 |
JP6161799B2 (ja) | 2017-07-12 |
TWI568044B (zh) | 2017-01-21 |
TW201511376A (zh) | 2015-03-16 |
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