WO2022215990A1 - 페로브스카이트 태양 전지 및 이를 포함하는 탠덤 태양 전지 - Google Patents
페로브스카이트 태양 전지 및 이를 포함하는 탠덤 태양 전지 Download PDFInfo
- Publication number
- WO2022215990A1 WO2022215990A1 PCT/KR2022/004831 KR2022004831W WO2022215990A1 WO 2022215990 A1 WO2022215990 A1 WO 2022215990A1 KR 2022004831 W KR2022004831 W KR 2022004831W WO 2022215990 A1 WO2022215990 A1 WO 2022215990A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- transport layer
- solar cell
- electron transport
- perovskite
- Prior art date
Links
- 239000010409 thin film Substances 0.000 claims abstract description 122
- 230000031700 light absorption Effects 0.000 claims abstract description 37
- 230000005525 hole transport Effects 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 229910052718 tin Inorganic materials 0.000 claims description 23
- 229910006854 SnOx Inorganic materials 0.000 claims description 20
- 229910003087 TiOx Inorganic materials 0.000 claims description 18
- 229910007667 ZnOx Inorganic materials 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910003320 CeOx Inorganic materials 0.000 claims description 12
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 9
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 7
- 229910003472 fullerene Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 141
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 26
- 239000000463 material Substances 0.000 description 26
- 238000000231 atomic layer deposition Methods 0.000 description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 17
- -1 polyethylene terephthalate Polymers 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 14
- 239000011787 zinc oxide Substances 0.000 description 13
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 11
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 11
- 239000004020 conductor Substances 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000000376 reactant Substances 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical group [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000005211 surface analysis Methods 0.000 description 3
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 229920002284 Cellulose triacetate Polymers 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 2
- NPNMHHNXCILFEF-UHFFFAOYSA-N [F].[Sn]=O Chemical compound [F].[Sn]=O NPNMHHNXCILFEF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-O ethylaminium Chemical compound CC[NH3+] QUSNBJAOOMFDIB-UHFFFAOYSA-O 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 2
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229960002796 polystyrene sulfonate Drugs 0.000 description 2
- 239000011970 polystyrene sulfonate Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- XRIBIDPMFSLGFS-UHFFFAOYSA-N 2-(dimethylamino)-2-methylpropan-1-ol Chemical compound CN(C)C(C)(C)CO XRIBIDPMFSLGFS-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 230000005595 deprotonation Effects 0.000 description 1
- 238000010537 deprotonation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/84—Layers having high charge carrier mobility
- H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2101/00—Properties of the organic materials covered by group H10K85/00
- H10K2101/80—Composition varying spatially, e.g. having a spatial gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to a perovskite solar cell and a tandem solar cell including the same, and more particularly, to a perovskite solar cell including an electron transport layer improved by using an atomic deposition method, and a tandem solar cell including the same it's about
- a solar cell is an aggregate that converts solar energy into electricity, and has been studied for a long time as it has attracted attention as next-generation energy, and high photoelectric efficiency is reported based on various materials such as silicon, CIGS, and perovskite.
- the most widely used solar cell is a silicon-based solar cell, which accounts for more than 90% of the solar cell market.
- a silicon solar cell When a silicon solar cell includes a crystalline silicon solar cell and an amorphous silicon solar cell, the crystalline silicon solar cell has a disadvantage in that the manufacturing cost is high, but it is widely commercialized due to its high energy efficiency. On the other hand, in the case of amorphous materials, the process technology is difficult, the dependence on equipment is high, and above all, the development is not in progress due to the low efficiency. If a silicon solar cell is classified as a first-generation, a perovskite-based solar cell is a representative of a third-generation solar cell that is being actively studied worldwide as an environmentally friendly future promising item.
- a perovskite solar cell uses a material having a perovskite crystal structure by combining inorganic and organic materials.
- Perovskite has a very special structure that shows superconductivity as well as insulator, semiconductor, and conductor properties.
- a conventional perovskite solar cell has a substrate (Glass), a transparent electrode (Transparent anode), a hole transport layer (HTL), a light absorption layer (Perovskite), an electron transport layer (ETL), and a metal It has a structure in which an electrode (metal cathode) is sequentially stacked.
- ITO indium tin oxide
- FTO fluorine doped tin oxide
- Au or Ag having a high work function is used as the metal electrode.
- perovskite-based solar cells The efficiency of perovskite-based solar cells is increasing rapidly after 10 years of research, and high photoelectric efficiency has been reported.
- a single-junction solar cell as described above only solar energy in a limited wavelength region can be absorbed, and degradation loss occurs in solar energy below the bandgap, so that a higher efficiency than the S-Q limit efficiency cannot be obtained.
- an upper cell (cell) having a large bandgap absorbs solar energy in a low wavelength band
- a lower cell having a low bandgap absorbs solar energy in a high wavelength band, thereby reducing loss and reducing the loss in a wide wavelength band. Since solar energy can be operated, it is possible to obtain high efficiency of 30% or more, which cannot be achieved with a single junction.
- the perovskite silicon tandem solar cell has a small bandgap and a large bandgap, respectively, so it is advantageous for light operation, so research is active.
- a thin film such as a SnO-bonded thin film forming an electron transport layer has a p-type semiconductor characteristic and has a high electron transfer resistance, so that the FF (Fill Factor) value of the solar cell is low, and thus energy conversion efficiency is lowered.
- the present invention has been devised to solve the above problems, and includes a perovskite solar cell capable of improving the FF (Fill Factor) value and energy conversion efficiency of the solar cell by forming an improved electron transport layer and the same
- An object of the present invention is to provide a tandem solar cell.
- the present invention is a perovskite solar cell comprising a transparent electrode, a hole transport layer, a perovskite light absorption layer, an electron transport layer and a metal electrode, wherein the electron transport layer is
- a perovskite solar cell characterized in that it is a graded thin film in which the chemical bonding state of the elements constituting the electron transport layer gradually changes from the lower part to the upper part.
- the transparent electrode is positioned on the substrate, the hole transport layer is positioned on the transparent electrode, the perovskite light absorption layer is positioned on the hole transport layer, and the electron transport layer is on the perovskite light absorption layer is positioned, and the metal electrode may be positioned on the electron transport layer.
- the differential thin film is made of any one of SnOx, TiOx, ZnOx, WOx, NbOx, InOx, and CeOx, and is chemically bonded to each of Sn, Ti, Zn W, Nb, In, and Ce constituting the differential thin film.
- the number of oxygen may be characterized in that it gradually changes from the lower thin film to the upper thin film.
- the differential thin film may be a thin film that is gradually changed from a lower thin film made of SnO to an upper thin film made of SnO 2 .
- a fullerene-based electron transport layer made of PCBM or C60 may be further included between the electron transport layer and the perovskite light absorption layer.
- the present invention provides a tandem solar cell including a silicon solar cell and a perovskite solar cell positioned on the silicon solar cell, wherein the perovskite solar cell includes a first transparent electrode, a hole transport layer, and a perovskite solar cell. It includes a skylight light absorption layer, an electron transport layer, a second transparent electrode, and a metal electrode, wherein the electron transport layer is graded in which the chemical bonding state of the elements constituting the electron transport layer gradually changes from the bottom to the top. ) provides a tandem solar cell, characterized in that it is a thin film.
- the first transparent electrode is positioned on the silicon solar cell
- the hole transport layer is positioned on the first transparent electrode
- the perovskite light absorption layer is positioned on the hole transport layer
- the electron transport layer is It may be positioned on the perovskite light absorption layer
- the second transparent electrode is positioned on the electron transport layer
- the metal electrode is positioned on the second transparent electrode.
- the differential thin film is made of any one of SnOx, TiOx, ZnOx, WOx, NbOx, InOx, and CeOx, and is chemically bonded to each of Sn, Ti, Zn W, Nb, In, and Ce constituting the differential thin film.
- the number of oxygen may be characterized in that it gradually changes from the lower thin film to the upper thin film.
- the differential thin film may be a thin film that is gradually changed from a lower thin film made of SnO to an upper thin film made of SnO 2 .
- a fullerene-based electron transport layer made of PCBM or C60 may be further included between the electron transport layer and the perovskite light absorption layer.
- the electron transport layer of the perovskite solar cell is gradually changed from SnO to SnO 2 from the bottom to the top (graded) ) as a thin film, the FF (Fill Factor) value and energy conversion efficiency are remarkably improved.
- FIG. 1 is a view showing an example of a conventional perovskite solar cell.
- FIG. 2 is a view showing a perovskite solar cell according to an embodiment of the present invention.
- FIG 3 is a flowchart of an ALD process for forming a differential thin film made of SnOx according to an embodiment of the present invention.
- FIG. 4 is a diagram illustrating a tandem solar cell including a perovskite solar cell according to an embodiment of the present invention.
- FIG. 5 is a view showing the XPS analysis result of the thin film formed by changing the TDMASn flow rate.
- FIG. 6 is a view showing the FF and energy conversion efficiency of the perovskite solar cell in the case where the electron transport layer is formed by changing the TDMASn flow rate.
- FIG. 7 is a view showing the XPS analysis result of the thin film formed while further changing the TDMASn flow rate.
- FIG. 8 is a view showing the FF and energy conversion efficiency of the perovskite solar cell in the case of forming the electron transport layer while further changing the TDMASn flow rate.
- FIG. 2 is a diagram illustrating an embodiment of a perovskite solar cell 1 according to an embodiment of the present invention.
- a perovskite solar cell 1 includes a substrate 11 , a first transparent electrode 12 positioned on the substrate 12 , and a first The hole transport layer 13 positioned on the transparent electrode 12, the perovskite light absorbing layer 14 positioned on the hole transport layer 13, and the perovskite light absorbing layer 14 positioned on the upper part
- a fullerene-based electron transport layer 15, an electron transport layer 16 positioned on the electron transport layer 15, and a second transparent electrode 17 positioned on the electron transport layer 16 It includes a metal electrode 18 positioned on the second transparent electrode 17, and the electron transport layer 16 is a differential ( graded) as a thin film.
- the perovskite solar cell 1 according to an embodiment of the present invention shown in FIG. 2 has four structures of a general perovskite solar cell, that is, a mesoscopic crystal structure (n-i-p mesoscopic), and a planar crystal structure ( It relates to a p-i-n planar among n-i-p planar), p-i-n planar, and p-i-n mesoscopic.
- the structure of the perovskite solar cell 1 shown in FIG. 2 is only one embodiment, it is not limited thereto, and a modified perovskite having a different structure or a different stacking order or a different configuration.
- the configuration of the electron transport layer made of the differential thin film according to the embodiment of the present invention may be equally applied to the solar cell.
- the substrate 11 is a borosilicate glass, quartz glass, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), polycarbonate (PC), polypropylene (PP) , but may be triacetyl cellulose (TAC) or polyether sulfone (PES), but is not limited thereto.
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PI polyimide
- PC polycarbonate
- PP polypropylene
- TAC triacetyl cellulose
- PES polyether sulfone
- the first transparent electrode 12 may be formed of a light-transmitting conductive material, and according to an embodiment of the present invention may be indium-tin oxide (ITO).
- ITO indium-tin oxide
- the present invention is not limited thereto, and the light-transmitting conductive material may include, for example, a transparent conductive oxide, a carbonaceous conductive material, and a metallic material.
- transparent conductive oxide examples include Indium Tin Oxide (ITO), Indium Cerium Oxide (ICO), Indium Tungsten Oxide (IWO), Zinc Indium Tin Oxide (ZITO), Zinc Indium Oxide (ZIO), Zinc Tin Oxide (ZTO), GITO (Gallium Indium Tin Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), AZO (Aluminum doped Zinc Oxide), FTO (Fluorine Tin Oxide), ZnO, etc. may be used.
- ITO Indium Tin Oxide
- ICO Indium Cerium Oxide
- IWO Indium Tungsten Oxide
- ZITO Zinc Indium Tin Oxide
- ZIO Zinc Indium Oxide
- ZTO Zinc Tin Oxide
- GITO Gaallium Indium Tin Oxide
- GIO Gaallium Indium Oxide
- GZO Gaallium Zinc Oxide
- AZO Alluminum doped Zinc Oxide
- the carbonaceous conductive material for example, graphene or carbon nanotubes may be used, and as the metallic material, for example, a metal (Ag) nanowire, a metal having a multilayer structure such as Au/Ag/Cu/Mg/Mo/Ti A thin film may be used.
- the term "transparent” refers to something that can transmit light to a certain degree or more, and is not necessarily interpreted as meaning complete transparency.
- the materials described above are not necessarily limited to the above-described embodiments, and may be formed of various materials, and various modifications are possible, such as a single-layer or multi-layer structure.
- the hole transport layer 13 may include at least one of a metal oxide selected from tungsten oxide (WOx), molybdenum oxide (MoOx), vanadium oxide (V2O5), nickel oxide (NiOx), and mixtures thereof. In addition, it may include at least one selected from the group consisting of a single molecule hole transport material and a polymer hole transport material, but is not limited thereto, and any material used in the art may be used without limitation.
- tungsten oxide tungsten oxide
- MoOx molybdenum oxide
- V2O5 vanadium oxide
- NiOx nickel oxide
- spiro-MeOTAD [2,2',7,7'-tetrakis(N,N-p-dimethoxy-phenylamino)-9,9'-spirobifluorene]
- the polymer As the hole transport material, P3HT [poly(3-hexylthiophene)], PTAA (polytriarylamine), poly(3,4-ethylenedioxythiophene) or polystyrene sulfonate (PEDOT:PSS) may be used, but is not limited thereto.
- the hole transport layer 13 may further include a doping material, and the doping material is a dopant selected from the group consisting of a Li-based dopant, a Co-based dopant, a Cu-based dopant, a Cs-based dopant, and combinations thereof. can be used, but is not limited thereto.
- the hole transport layer 13 may be formed by applying a precursor solution for a hole transport layer on the first transparent electrode 12 and drying it.
- the perovskite light absorption layer 14 is ABX 3 (where A is a monovalent organic ammonium cation or metal cation, B is a divalent metal metal cation, and X is a halogen anion.)
- A represents methylammonium (CH 3 NH 3 + ) or ethylammonium (CH 3 CH 2 NH 3 + ), B represents Pb or Sn, and X represents I, Br or Cl may include, but is not limited to, perovskite having a chemical formula of ), and two or more types may be mixed and used.
- the perovskite compound is, for example, CH 3 NH 3 PbI 3 , CH 3 NH 3 PbI x Cl 3-x , MAPbI 3 , CH 3 NH 3 PbI x Br 3-x , CH 3 NH 3 PbCl x Br 3-x , HC(NH 2 ) 2 PbI 3 , HC(NH 2 ) 2 PbI x Cl 3-x , HC(NH 2 ) 2 PbI x Br 3-x , HC(NH 2 ) 2 PbCl x Br 3-x , ( CH 3 NH 3 )(HC(NH 2 ) 2 ) 1-y PbI 3 , (CH 3 NH 3 )(HC(NH 2 ) 2 ) 1-y PbI x Cl 3-x , (CH 3 NH 3 )( HC(NH 2 ) 2 ) 1-y PbI x Cl 3-x , (CH 3 NH 3 )( HC(NH 2 ) 2 ) 1-y P
- Perovskite has a large absorption coefficient (strong solar absorption) and a low non-radiative carrier recombination rate. It is known to increase the conversion efficiency due to the characteristic that it is not formed in or at the deep level.
- the electron transport layer 15 is located on the perovskite light absorption layer 14 and may be formed of a fullerene series made of PCBM or C60. However, this is not essential and, optionally, the upper electron transport layer 16 may be formed directly on the perovskite light absorption layer 14 without such an electron transport layer 15 in the embodiment of the present invention shown in FIG. 2 . have.
- the electron transport layer 16 is formed of TiOx or ZnOx on the perovskite light absorption layer 14, when the electron transport layer 16 comes into direct contact with the perovskite light absorption layer 14, the perovskite There is a problem of disassembling
- the fullerene-based electron transport layer 15 made of PCBM or C60 is formed between the electron transport layer 16 and the perovskite light absorption layer 14, so that electron transport made of TiOx or ZnOx. It is possible to prevent the layer from decomposing the perovskite by contacting the perovskite light absorbing layer.
- the electron transport layer 16 is located on the electron transport layer 15, and transfers electrons generated in the perovskite light absorption layer to the second transparent electrode.
- the electron transport layer 16 is a thin film made of SnOx, and is gradually changed from a lower thin film made of SnO to an upper thin film made of SnO 2 . It may be made of a thin film.
- Such a differential thin film made of SnOx according to an embodiment of the present invention may be formed by atomic layer deposition (ALD) at a low temperature of 150° C. or less.
- ALD atomic layer deposition
- FIG 3 is a flowchart of an ALD process for forming a differential thin film made of SnOx according to an embodiment of the present invention.
- a precursor gas which is a source of tin (Sn) constituting the differential thin film, is first injected and adsorbed on the surface (S1).
- the source of the tin (Sn) may be any one of TDMASn, TEMASn, Sn(dmamp) 2 , and SnCl 4 .
- TDMASn is used as the source of the tin Sn.
- a source of oxygen (O) is injected as a reactant constituting the differential thin film (S3).
- the source of oxygen (O) may be any one of H 2 O, H 2 O 2 , O 3 , and O 2 .
- H 2 O is used as a source of oxygen (O).
- steps S1 to S4 are used as one cycle and this cycle is repeated.
- the flow rate of TDMASn which is the source of tin (Sn)
- the flow rate of H 2 O which is the source of oxygen (O)
- the process temperature is 80 °C.
- graded SnOx thin film was formed on the electron transport layer according to an embodiment of the present invention could be confirmed by X-ray Phothelectron Spectroscopy (XPS) surface analysis equipment.
- XPS X-ray Phothelectron Spectroscopy
- XPS surface analysis equipment is an equipment that measures the components and bonding characteristics of a sample by measuring the kinetic energy and intensity of photoelectrons emitted from the surface of the sample by shooting X-rays on the sample.
- the upper electron transport layer 16 made of the above-described differential thin film of SnOx is only one embodiment of the present invention, and the differential thin film of the present invention may be formed of any one of TiOx, ZnOx, WOx, NbOx, InOx, and CeOx.
- the number of oxygen chemically bonded to each Ti, Zn W, Nb, In, and Ce is relatively small as in the SnOx differential thin film.
- the number of chemically bound oxygen from the predetermined lower thin film is gradually changed to the predetermined upper thin film having a relatively large number.
- a differential thin film of TiOx, ZnOx, WOx, NbOx, InOx, and CeOx may also be formed by low-temperature atomic layer deposition (ALD) as shown in FIG. 3 .
- the flow rate and process temperature of the reactants constituting each TiOx, ZnOx, WOx, NbOx, InOx, and CeOx may be different from SnOx, but oxygen (O) in each of TiOx, ZnOx, WOx, NbOx, and InOx
- O oxygen
- the second transparent electrode 17 may be indium zinc oxide (IZO) according to an embodiment of the present invention.
- IZO indium zinc oxide
- ITO indium tin oxide
- FTO fluorine-containing tin oxide
- It may be formed of the same material as the transparent electrode.
- the electron transport layer 16 and the electron transport layer 15 are present between the second transparent electrode 17 and the perovskite light absorption layer 14, they serve as a buffer layer. Even if the second transparent electrode 17 made of IZO is formed on the absorption layer 14 by sputtering, the perovskite light absorption layer 14 may be protected.
- the metal electrode 18 is a portion electrically connected to the outside, and may be formed by depositing a patterned silver (Ag) thin film.
- FIG. 4 is an embodiment of a tandem solar cell 2 including a perovskite solar cell according to an embodiment of the present invention.
- a tandem solar cell including a perovskite solar cell is formed on a silicon solar cell (lower cell) 20 and a silicon solar cell. It may include a perovskite solar cell (upper cell) 30 that becomes city) may be provided.
- This bonding layer is a transparent conductive oxide (TCO), a carbonaceous conductive material, so that the long-wavelength light passing through the perovskite solar cell 30 can be incident on the silicon solar cell 20 disposed below without transmission loss. It may be implemented using a metallic material or a conductive polymer.
- the tandem solar cell 2 is formed by spin coating a bonding layer solution on top of the silicon solar cell 20, and applying the spin-coated transparent bonding layer solution to the surface of the perovsky solution. It can be prepared by bonding the solar cell 30 and curing it by UV treatment or heat treatment. However, since this is only one embodiment, it goes without saying that the tandem solar cell may be manufactured by other well-known methods.
- the silicon solar cell 20 may be a silicon solar cell having a band gap of about 1.0 eV to 1.2 eV. It may include a back electrode 21 of a metal or a metal alloy disposed on the substrate, and a silicon semiconductor layer 22 disposed on the back electrode.
- the back-electrode 21 may be formed on a substrate (not shown) for electrical connection to the outside.
- the back electrode may be formed through e-beam evaporation vacuum deposition, and may be formed of Ag, Ti, Au, or the like.
- the silicon semiconductor layer 22 may include a p-type silicon semiconductor layer and an n-type silicon semiconductor layer disposed on the p-type silicon semiconductor layer.
- the perovskite solar cell 30 includes a first transparent electrode 31 , a hole transport layer 32 , a perovskite light absorption layer 33 , an electron transport layer 34 , an electron transport layer 35 , A second transparent electrode 36 and a metal electrode 37 may be included.
- the first transparent electrode 31 is formed on the silicon solar cell 20
- the hole transport layer 32 is formed on the first transparent electrode
- the perovskite light absorption layer 33 is formed on the hole transport layer 32
- the electron transport layer 34 is formed on the perovskite light absorption layer 33
- the electron transport layer ( 35) is formed on the fullerene-based electron transport layer 34
- the second transparent electrode 36 is formed on the electron transport layer 35
- the metal electrode 37 is 2 It may be formed on the transparent electrode 36 .
- the first transparent electrode 31 may be formed of a light-transmitting conductive material, and according to an embodiment of the present invention may be indium-tin oxide (ITO).
- ITO indium-tin oxide
- the present invention is not limited thereto, and the light-transmitting conductive material may include, for example, a transparent conductive oxide, a carbonaceous conductive material, and a metallic material.
- transparent conductive oxide examples include Indium Tin Oxide (ITO), Indium Cerium Oxide (ICO), Indium Tungsten Oxide (IWO), Zinc Indium Tin Oxide (ZITO), Zinc Indium Oxide (ZIO), Zinc Tin Oxide (ZTO), GITO (Gallium Indium Tin Oxide), GIO (Gallium Indium Oxide), GZO (Gallium Zinc Oxide), AZO (Aluminum doped Zinc Oxide), FTO (Fluorine Tin Oxide), ZnO, etc. may be used.
- ITO Indium Tin Oxide
- ICO Indium Cerium Oxide
- IWO Indium Tungsten Oxide
- ZITO Zinc Indium Tin Oxide
- ZIO Zinc Indium Oxide
- ZTO Zinc Tin Oxide
- GITO Gaallium Indium Tin Oxide
- GIO Gaallium Indium Oxide
- GZO Gaallium Zinc Oxide
- AZO Alluminum doped Zinc Oxide
- the carbonaceous conductive material for example, graphene or carbon nanotubes may be used, and as the metallic material, for example, a metal (Ag) nanowire, a metal having a multilayer structure such as Au/Ag/Cu/Mg/Mo/Ti A thin film may be used.
- the term "transparent” refers to something that can transmit light to a certain degree or more, and is not necessarily interpreted as meaning complete transparency.
- the materials described above are not necessarily limited to the above-described embodiments, and may be formed of various materials, and various modifications are possible, such as a single-layer or multi-layer structure.
- the hole transport layer 32 may include at least one of a metal oxide selected from tungsten oxide (WOx), molybdenum oxide (MoOx), vanadium oxide (V2O5), nickel oxide (NiOx), and mixtures thereof. In addition, it may include at least one selected from the group consisting of a single molecule hole transport material and a polymer hole transport material, but is not limited thereto, and any material used in the art may be used without limitation.
- WOx tungsten oxide
- MoOx molybdenum oxide
- V2O5 vanadium oxide
- NiOx nickel oxide
- spiro-MeOTAD [2,2',7,7'-tetrakis(N,N-p-dimethoxy-phenylamino)-9,9'-spirobifluorene]
- the polymer As the hole transport material, P3HT [poly(3-hexylthiophene)], PTAA (polytriarylamine), poly(3,4-ethylenedioxythiophene) or polystyrene sulfonate (PEDOT:PSS) may be used, but is not limited thereto.
- the hole transport layer 32 may further include a doping material, and the doping material is a dopant selected from the group consisting of a Li-based dopant, a Co-based dopant, a Cu-based dopant, a Cs-based dopant, and combinations thereof. can be used, but is not limited thereto.
- the hole transport layer 32 may be formed by applying a precursor solution for the hole transport layer on the first transparent electrode 31 and drying it.
- the perovskite light absorption layer 33 is ABX 3 (where A is a monovalent organic ammonium cation or metal cation, B is a divalent metal metal cation, and X is a halogen anion.)
- A represents methylammonium (CH 3 NH 3 + ) or ethylammonium (CH 3 CH 2 NH 3 + ), B represents Pb or Sn, and X represents I, Br or Cl may include, but is not limited to, perovskite having a chemical formula of ), and two or more types may be mixed and used.
- the perovskite compound is, for example, CH 3 NH 3 PbI 3 , CH 3 NH 3 PbI x Cl 3-x , MAPbI 3 , CH 3 NH 3 PbI x Br 3-x , CH 3 NH 3 PbCl x Br 3-x , HC(NH 2 ) 2 PbI 3 , HC(NH 2 ) 2 PbI x Cl 3-x , HC(NH 2 ) 2 PbI x Br 3-x , HC(NH 2 ) 2 PbCl x Br 3-x , ( CH 3 NH 3 )(HC(NH 2 ) 2 ) 1-y PbI 3 , (CH 3 NH 3 )(HC(NH 2 ) 2 ) 1-y PbI x Cl 3-x , (CH 3 NH 3 )( HC(NH 2 ) 2 ) 1-y PbI x Cl 3-x , (CH 3 NH 3 )( HC(NH 2 ) 2 ) 1-y P
- the electron transport layer 34 is located on the perovskite light absorption layer 33 and may be formed of a fullerene series made of PCBM or C60. However, this is not essential, and optionally, an upper electron transport layer may be formed directly on the perovskite light absorption layer 33 without such an electron transport layer 34 .
- the electron transport layer 34 is located between the electron transport layer 35 and the perovskite light absorption layer 33 when the electron transport layer 35 is made of TiOx, ZnOx, or the like, so that the electron transport layer is made of perovskite.
- the electron transport layer 35 is made of TiOx, ZnOx, or the like, so that the electron transport layer is made of perovskite.
- the electron transport layer 35 is located on the electron transport layer 34 , and transfers electrons generated in the perovskite light absorption layer 33 to the second transparent electrode 36 .
- the electron transport layer 35 is a thin film made of SnOx, and is gradually changed from a lower thin film made of SnO to an upper thin film made of SnO 2 . It may be made of a thin film.
- Such a differential thin film made of SnOx according to an embodiment of the present invention may be formed by the ALD process shown in FIG. 3 .
- the flow rate of TDMASn which is a source of tin (Sn)
- Sn tin
- O oxygen
- the flow rate of phosphorus H 2 O is 10 ⁇ 100 sccm, and the process temperature can be 80 °C.
- the upper electron transport layer made of the SnOx differential thin film is only one embodiment of the present invention, and the differential thin film of the present invention may be formed of any one of TiOx, ZnOx, WOx, NbOx, InOx, and CeOx.
- the number of oxygen chemically bonded to each Ti, Zn W, Nb, In, and Ce is relatively small as in the SnOx differential thin film.
- the number of chemically bound oxygen from the predetermined lower thin film is gradually changed to the predetermined upper thin film having a relatively large number.
- a differential thin film of TiOx, ZnOx, WOx, NbOx, InOx, and CeOx may also be formed by the atomic layer deposition (ALD) method shown in FIG. 3 .
- the flow rate and process temperature of the reactants constituting each TiOx, ZnOx, WOx, NbOx, InOx, and CeOx may be different from SnOx, but oxygen (O) in each of TiOx, ZnOx, WOx, NbOx, and InOx
- O oxygen
- the second transparent electrode 36 may be indium zinc oxide (IZO) according to an embodiment of the present invention.
- IZO indium zinc oxide
- ITO indium tin oxide
- FTO fluorine-containing tin oxide
- It may be formed of the same material as the transparent electrode 31 .
- the second transparent electrode 36 is essential. The reason is that when sunlight is irradiated from the top to the bottom of the tandem solar cell 2 shown in FIG. 4 , the metal electrode 37 must be formed in a grid pattern to transmit sunlight, so there is no empty space between the grid patterns.
- the second transparent electrode 36 is formed so that electrons generated in the perovskite light absorption layer 33 below and reaching this empty space can move to the metal electrode 37 through lateral movement.
- the metal electrode 37 is a portion electrically connected to the outside, and may be formed by depositing a silver (Ag) thin film in a grid pattern to allow sunlight to pass therethrough.
- FIG. 5 shows the XPS analysis results when the thin film was formed with the flow rate of TDMASn, the source of tin (Sn) being 20 sccm, and when the thin film was formed with the flow rate of 30 sccm
- FIG. 6 is the source of tin (Sn).
- the thin film shown in A of FIG. 5 has a flow rate of TDMASn, a source of tin (Sn), of 20 sccm, and a flow rate of, H 2 O, a source of oxygen (O) of 30 sccm on the ITO transparent electrode, and a process temperature of 80
- a thin film was formed by atomic layer deposition (ALD) shown in FIG. 3 at °C
- the thin film shown in FIG. 5B is a source of tin (Sn) under the same experimental conditions as in FIG.
- a thin film was formed by atomic layer deposition (ALD) with only the flow rate of TDMASn set to 30 sccm.
- XPS X-ray Photoelectron Spectroscopy
- analysis equipment is a surface analysis equipment that measures the components and bonding properties of materials by measuring the kinetic energy and intensity of photoelectrons emitted by the photoelectric effect by incident X-rays on the sample.
- the binding energy representing the peak value is 486.6 eV, which is formed in a single layer structure of SnO, and described in the present invention It can be seen that a graded thin film was not formed.
- the binding energy representing the peak value gradually increases from 486.6 eV (SnO) to 487.2 eV (SnO 2 ) from the bottom to the top. you can see that is changing.
- the lowermost layer is substantially formed only of SnO, but as the ratio of SnO2 to SnO2 increases toward the uppermost layer, the uppermost layer is substantially formed only of SnO2. That is, in the case of B of FIG. 5 , it can be seen that the graded thin film described in the present invention is formed.
- 6A is a perovskite by forming an electron transport layer with a single SnO thin film (a thin film not a differential thin film) as shown in FIG.
- the FF Frill Factor
- 6B shows a perovskite solar cell by forming an electron transport layer as a graded thin film as shown in FIG. 5B by atomic deposition at a flow rate of TDMASn, a source of tin (Sn), of 30 sccm
- TDMASn a source of tin
- Sn tin
- the case of manufacturing a perovskite solar cell by forming an electron transport layer with a graded thin film that gradually changes from SnO to SnO 2 from bottom to top according to an embodiment of the present invention is not the case with SnO single It can be seen that the FF (Fill Factor) and energy conversion efficiency are remarkably higher than those of the thin film.
- TDMASn which is a source of tin (Sn)
- Sn tin
- FIG. 7 The FF and energy conversion efficiency in the case of manufacturing a perovskite solar cell by forming an electron transport layer by changing the flow rate of TDMASn as a source to 20 sccm, 30 sccm, 60 sccm, and 90 sccm are shown in comparison.
- the source of tin (Sn) is 30 sccm or more (ie, 30 sccm, 60 sccm, and 90 sccm)
- a graded thin film that gradually changes from SnO to SnO 2 from the bottom to the top is formed.
- the flow rate of TDMASn which is a source of tin (Sn)
- 20 sccm As shown in FIG. 8, the flow rate of TDMASn, which is a source of tin (Sn), is changed to 20 sccm, 30 sccm, 60 sccm, and 90 sccm, and other conditions are the same as in FIG.
- the flow rate is 30 sccm and the process temperature is 80 ° C.
- Experimental data is shown in the case of manufacturing a perovskite solar cell by forming an electron transport layer made of a graded thin film by atomic deposition.
- the present invention can be used in the field of manufacturing perovskite solar cells.
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
- 투명전극, 정공전달층, 페로브스카이트 광흡수층, 전자전달층 및 금속전극을 포함하는 페로브스카이트 태양 전지에 있어서,상기 전자전달층은 하부에서 상부로 갈수록 상기 전자전달층을 구성하는 원소들의 화학적 결합상태가 점진적으로 변하는 차등(graded) 박막인 것을 특징으로 하는 페로브스카이트 태양 전지.
- 제1항에 있어서, 상기 정공전달층은 투명전극 상부에 위치하며,상기 페로브스카이트 광흡수층은 정공전달층 상부에 위치하고,상기 전자전달층은 상기 페로브스카이트 광흡수층 상부에 위치하며,상기 금속전극은 상기 전자전달층 상부에 위치하는 것을 특징으로 하는 페로브스카이트 태양 전지.
- 제1항 또는 제2항에 있어서,상기 차등 박막은 SnOx, TiOx, ZnOx, WOx, NbOx, InOx, 및 CeOx 중 어느 하나로 이루어지며,상기 차등 박막을 구성하는 각각의 Sn, Ti, Zn W, Nb, In, 및 Ce에 화학적으로 결합되는 산소의 개수는, 하부 박막으로부터 상부 박막으로 점진적으로 변화하는 것을 특징으로 하는 페로브스카이트 태양 전지.
- 제1항 또는 제2항에 있어서,상기 차등 박막은 SnO로 이루어진 하부 박막으로부터 SnO2로 이루어진 상부 박막으로 점진적으로 변화되는 박막인 것을 특징으로 하는 페로브스카이트 태양 전지.
- 제1항 또는 제2항에 있어서,상기 전자전달층과 상기 페로브스카이트 광흡수층 사이에 PCBM이나 C60으로 이루어지는 풀러렌 계열의 전자수송층을 더 포함하는 것을 특징으로 하는 페로브스카이트 태양 전지.
- 실리콘 태양 전지와 상기 실리콘 태양 전지 상부에 위치하는 페로브스카이트 태양 전지를 포함하는 탠덤 태양 전지에 있어서,상기 페로브스카이트 태양 전지는 제1 투명전극, 정공전달층, 페로브스카이트 광흡수층, 전자전달층, 제2 투명전극, 및 금속전극을 포함하고,상기 전자전달층은 하부에서 상부로 갈수록 상기 전자전달층을 구성하는 원소들의 화학적 결합상태가 점진적으로 변하는 차등(graded) 박막인 것을 특징으로 하는 탠덤 태양 전지.
- 제6항에 있어서,상기 제1 투명전극은 상기 실리콘 태양 전지 상부에 위치하고,상기 정공전달층은 제1 투명전극 상부에 위치하며,상기 페로브스카이트 광흡수층은 상기 정공전달층 상부에 위치하고,상기 전자전달층은 상기 페로브스카이트 광흡수층 상부에 위치하며,상기 제2 투명전극은 상기 전자전달층 상부에 위치하고,상기 금속전극은 상기 제2 투명전극 상부에 위치하는 것을 특징으로 하는 탠덤 태양 전지.
- 제6항 또는 제7항에 있어서,상기 차등 박막은 SnOx, TiOx, ZnOx, WOx, NbOx, InOx, 및 CeOx 중 어느 하나로 이루어지며,상기 차등 박막을 구성하는 각각의 Sn, Ti, Zn W, Nb, In, 및 Ce에 화학적으로 결합되는 산소의 개수는, 하부 박막으로부터 상부 박막으로 점진적으로 변화하는 것을 특징으로 하는 탠덤 태양 전지.
- 제6항 또는 제7항에 있어서,상기 차등 박막은 SnO로 이루어진 하부 박막으로부터 SnO2로 이루어진 상부 박막으로 점진적으로 변화되는 박막인 것을 특징으로 하는 탠덤 태양 전지.
- 제6항 또는 제7항에 있어서,상기 전자전달층과 상기 페로브스카이트 광흡수층 사이에 PCBM이나 C60으로 이루어지는 풀러렌 계열의 전자수송층을 더 포함하는 것을 특징으로 하는 탠덤 태양 전지.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023560868A JP2024513065A (ja) | 2021-04-07 | 2022-04-05 | ペロブスカイト太陽電池及びこれを含むタンデム太陽電池 |
EP22784899.1A EP4322235A1 (en) | 2021-04-07 | 2022-04-05 | Perovskite solar cell and tandem solar cell comprising same |
CN202280027044.6A CN117178649A (zh) | 2021-04-07 | 2022-04-05 | 钙钛矿太阳能电池和包括其的串联太阳能电池 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210045300A KR20220139497A (ko) | 2021-04-07 | 2021-04-07 | 페로브스카이트 태양 전지 및 이를 포함하는 탠덤 태양 전지 |
KR10-2021-0045300 | 2021-04-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022215990A1 true WO2022215990A1 (ko) | 2022-10-13 |
Family
ID=83545532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2022/004831 WO2022215990A1 (ko) | 2021-04-07 | 2022-04-05 | 페로브스카이트 태양 전지 및 이를 포함하는 탠덤 태양 전지 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP4322235A1 (ko) |
JP (1) | JP2024513065A (ko) |
KR (1) | KR20220139497A (ko) |
CN (1) | CN117178649A (ko) |
WO (1) | WO2022215990A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116669439A (zh) * | 2023-07-31 | 2023-08-29 | 宁德时代新能源科技股份有限公司 | 太阳能电池及其制备方法、光伏组件和光伏装置 |
CN117328040A (zh) * | 2023-11-14 | 2024-01-02 | 无锡松煜科技有限公司 | 一种钙钛矿薄膜太阳能电池的制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102657093B1 (ko) * | 2023-08-02 | 2024-04-15 | 한국화학연구원 | 플라즈마 ald를 이용한 전자수송층을 통한 박막 계면제어 방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130117144A (ko) * | 2012-04-17 | 2013-10-25 | 삼성전자주식회사 | 인버티드 유기 태양전지 및 그 제조방법 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101431817B1 (ko) | 2013-07-31 | 2014-08-20 | 국립대학법인 울산과학기술대학교 산학협력단 | 이중 소자 융합형 텐덤 태양 전지 및 그 제조 방법 |
-
2021
- 2021-04-07 KR KR1020210045300A patent/KR20220139497A/ko not_active Application Discontinuation
-
2022
- 2022-04-05 CN CN202280027044.6A patent/CN117178649A/zh active Pending
- 2022-04-05 WO PCT/KR2022/004831 patent/WO2022215990A1/ko active Application Filing
- 2022-04-05 JP JP2023560868A patent/JP2024513065A/ja active Pending
- 2022-04-05 EP EP22784899.1A patent/EP4322235A1/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130117144A (ko) * | 2012-04-17 | 2013-10-25 | 삼성전자주식회사 | 인버티드 유기 태양전지 및 그 제조방법 |
Non-Patent Citations (4)
Title |
---|
AHN JOON-SUB, KANG SEUNG-GU, SONG JAE-GWAN, KIM JIN-BONG, HAN EUN-MI: "Improved Photoelectric Conversion Efficiency of Perovskite Solar Cells with TiO 2 :TiCl 4 Electron Transfer Laye", JOURNAL OF THE MICROELECTRONICS AND PACKAGING SOCIETY, vol. 24, no. 4, 1 January 2017 (2017-01-01), pages 85 - 90, XP055976694, ISSN: 1226-9360, DOI: 10.6117/kmeps.2017.24.4.085 * |
HULTQVIST ADAM, JACOBSSON T. JESPER, SVANSTRÖM SEBASTIAN, EDOFF MARIKA, CAPPEL UTE B., RENSMO HÅKAN, JOHANSSON ERIK M. J., BOSCHLO: "SnO x Atomic Layer Deposition on Bare Perovskite—An Investigation of Initial Growth Dynamics, Interface Chemistry, and Solar Cell Performance", ACS APPLIED ENERGY MATERIALS, vol. 4, no. 1, 25 January 2021 (2021-01-25), pages 510 - 522, XP055976689, ISSN: 2574-0962, DOI: 10.1021/acsaem.0c02405 * |
MARJA N. MULLINGS, CARL HÄGGLUND, STACEY F. BENT: "Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water", JOURNAL OF VACUUM SCIENCE, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, vol. 31, no. 6, 1 January 2013 (2013-01-01), 2 Huntington Quadrangle, Melville, NY 11747, pages 061503, XP055252529, ISSN: 0734-2101, DOI: 10.1116/1.4812717 * |
SHAHIDUZZAMAN MD., KUWAHARA DAIKI, NAKANO MASAHIRO, KARAKAWA MAKOTO, TAKAHASHI KOHSHIN, NUNZI JEAN-MICHEL, TAIMA TETSUYA: "Low-Temperature Processed TiOx Electron Transport Layer for Efficient Planar Perovskite Solar Cells", NANOMATERIALS, vol. 10, no. 9, pages 1676, XP055976686, DOI: 10.3390/nano10091676 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116669439A (zh) * | 2023-07-31 | 2023-08-29 | 宁德时代新能源科技股份有限公司 | 太阳能电池及其制备方法、光伏组件和光伏装置 |
CN116669439B (zh) * | 2023-07-31 | 2024-04-12 | 宁德时代新能源科技股份有限公司 | 太阳能电池及其制备方法、光伏组件和光伏装置 |
CN117328040A (zh) * | 2023-11-14 | 2024-01-02 | 无锡松煜科技有限公司 | 一种钙钛矿薄膜太阳能电池的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
EP4322235A1 (en) | 2024-02-14 |
KR20220139497A (ko) | 2022-10-17 |
JP2024513065A (ja) | 2024-03-21 |
CN117178649A (zh) | 2023-12-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2022215990A1 (ko) | 페로브스카이트 태양 전지 및 이를 포함하는 탠덤 태양 전지 | |
KR101717430B1 (ko) | 페로브스카이트 기반 태양전지 | |
JP4966653B2 (ja) | 共有する有機電極を備えたタンデム型光起電力電池及びその製造方法 | |
WO2019017522A1 (ko) | 페로브스카이트 태양전지 및 이를 포함하는 탬덤 태양전지 | |
WO2011102677A2 (ko) | 나노구조 무기-유기 이종 접합 태양전지의 제조방법 | |
WO2011102673A2 (ko) | 전고체상 이종 접합 태양전지 | |
WO2018221913A1 (ko) | 페로브스카이트 실리콘 텐덤 태양전지의 제조 방법 | |
WO2014204130A1 (ko) | 태양전지 및 그 제조방법 | |
KR101310058B1 (ko) | 역구조 유기 태양전지 및 그 제조방법 | |
WO2018012825A1 (ko) | 유무기 복합 태양전지 | |
US20110237019A1 (en) | Method for Improving the Efficiency of Flexible Organic Solar Cells | |
WO2020130318A1 (ko) | 텐덤 태양전지 | |
WO2019039762A1 (ko) | 태양전지 및 태양전지의 제조 방법 | |
WO2015167225A1 (ko) | 유기태양전지 및 이의 제조방법 | |
KR20190089394A (ko) | 태양 전지 | |
WO2019050185A1 (ko) | 태양전지 및 그 제조 방법 | |
KR20090028987A (ko) | 광전변환소자 및 이의 제조방법 | |
WO2021107184A1 (ko) | 일체형 탠덤 태양전지 및 그 제조방법 | |
KR102600452B1 (ko) | 태양전지 | |
WO2021177552A1 (ko) | 태양 전지 및 이의 제조 방법 | |
WO2022059834A1 (ko) | 광안정성이 향상된 양자점 태양전지 및 이의 제조방법 | |
WO2018021869A1 (ko) | 유-무기 복합 태양전지 제조방법 | |
WO2023234627A1 (ko) | 탠덤 태양전지 및 이의 제조방법 | |
WO2022191464A1 (ko) | 태양 전지 및 그 제조 방법 | |
WO2023121020A1 (ko) | 암모늄 염 처리된 금속산화물이 포함된 태양전지 및 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 22784899 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2023560868 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 18286018 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2022784899 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2022784899 Country of ref document: EP Effective date: 20231107 |