WO2015022856A1 - 弾性波装置 - Google Patents
弾性波装置 Download PDFInfo
- Publication number
- WO2015022856A1 WO2015022856A1 PCT/JP2014/069905 JP2014069905W WO2015022856A1 WO 2015022856 A1 WO2015022856 A1 WO 2015022856A1 JP 2014069905 W JP2014069905 W JP 2014069905W WO 2015022856 A1 WO2015022856 A1 WO 2015022856A1
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- support layer
- acoustic wave
- elastic wave
- hollow
- wave device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0023—Balance-unbalance or balance-balance networks
- H03H9/0028—Balance-unbalance or balance-balance networks using surface acoustic wave devices
- H03H9/0047—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks
- H03H9/0052—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks being electrically cascaded
- H03H9/0057—Balance-unbalance or balance-balance networks using surface acoustic wave devices having two acoustic tracks being electrically cascaded the balanced terminals being on the same side of the tracks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1042—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a housing formed by a cavity in a resin
Definitions
- the present invention relates to an acoustic wave device in which a plurality of IDT electrodes are formed on a piezoelectric substrate. More specifically, the present invention relates to an acoustic wave device in which a plurality of IDT electrodes are sealed with a support layer and a cover member.
- Patent Document 1 discloses an example of this type of acoustic wave device.
- a plurality of surface acoustic wave element portions are formed on one piezoelectric substrate.
- Each surface acoustic wave element has at least a part of an IDT electrode.
- a support layer is formed on the piezoelectric substrate so as to surround the surface acoustic wave element portion.
- the cover member is joined on the support layer. Thereby, a hollow portion where the surface acoustic wave element portion faces is formed.
- An object of the present invention is to provide an elastic wave device that is unlikely to cause the above-described leakage failure.
- the acoustic wave device includes a piezoelectric substrate, a plurality of acoustic wave element portions, a support layer, and a cover member.
- the plurality of acoustic wave element portions are provided on the piezoelectric substrate and have at least one IDT electrode.
- the support layer is disposed on the piezoelectric substrate outside the region where the elastic wave element portion is provided in order to form a hollow portion in each portion where the elastic wave element portion is provided.
- the cover member is laminated on the support layer in order to seal each portion where the acoustic wave element portion is provided and form the hollow portion.
- the support layer includes a first support layer disposed along the outer peripheral edge of the piezoelectric substrate, and a second support layer disposed in a region surrounded by the first support layer. And a support layer.
- the second support layer is provided so as to surround a portion where the acoustic wave element portion is provided in a region surrounded by the first support layer.
- a hollow path is provided between the first support layer and the second support layer, and the hollow path is disposed so as to communicate at least two of the hollow portions.
- an opening is provided in the second support layer so as to reduce the plane area of the second support layer.
- the first support layer has a closed loop shape.
- the plurality of hollow portions are liquid-tightly sealed.
- the outer peripheral edge of the cover member when viewed in plan, the outer peripheral edge of the cover member reaches the outer peripheral edge of the piezoelectric substrate, thereby forming a wafer level package.
- the support layer has the first and second support layers, and the hollow path is provided between the first support layer and the second support layer. It becomes possible to effectively suppress the leakage failure due to the generation of voids. That is, even if a void is generated in the second support layer, only the hollow path and the hollow portion communicate with each other, and a leak failure between the outside and the hollow portion hardly occurs. In addition, since it is divided into the first support layer and the second support layer, the area of the second support layer can be reduced, and the generation of voids can also be suppressed. Therefore, a leak failure due to the generation of voids hardly occurs. Therefore, it is possible to effectively suppress a leak failure due to the generation of voids.
- FIG. 1 is a schematic plan view showing a structure in which the cover member of the acoustic wave device according to the first embodiment of the present invention is removed.
- FIG. 2 is a partially cutaway cross-sectional view showing a main part of the acoustic wave device according to the first embodiment of the present invention.
- FIG. 3A is a diagram illustrating a circuit configuration of the acoustic wave device according to the first embodiment
- FIG. 3B is a plan view illustrating an example of an electrode structure of a 1-port acoustic wave resonator.
- FIG. 4 is a schematic plan view showing a structure in which the cover member is removed in the acoustic wave device according to the second embodiment.
- FIG. 5 is a schematic plan view showing a structure in which the cover member is removed in the elastic wave device of the comparative example.
- FIG. 1 is a schematic plan view showing a structure in which a cover member is removed in an elastic wave device according to a first embodiment of the present invention.
- FIG. 2 is a partially cutaway cross-sectional view showing a main part of the elastic wave device according to the first embodiment of the present invention, and
- FIG. 3A is a circuit diagram of the elastic wave device according to the first embodiment.
- the acoustic wave device 1 includes a piezoelectric substrate 2.
- the piezoelectric substrate 2 is formed of a piezoelectric single crystal substrate or a piezoelectric ceramic plate such as LiTaO 3 or LiNbO 3 .
- the piezoelectric substrate 2 is a rectangular plate-shaped piezoelectric single crystal substrate.
- a duplexer is configured by configuring a plurality of acoustic wave element portions on the piezoelectric substrate 2. More specifically, a duplexer having the circuit configuration shown in FIG.
- the acoustic wave device 1 has an antenna terminal 3.
- a common terminal 4 is connected to the antenna terminal 3.
- a transmission filter 7 is configured between the common terminal 4 and the transmission terminal 5.
- a reception filter 8 is configured between the common terminal 4 and the pair of balanced terminals 6a and 6b.
- the transmission filter 7 has a ladder type circuit configuration. That is, it has series arm resonators S1, S2, S3a, S3b, and S4 each made of an elastic wave resonator, and parallel arm resonators P1 to P4.
- the series arm resonators S1 to S4 and the parallel arm resonators P1 to P4 are formed of a one-port elastic wave resonator.
- the 1-port acoustic wave resonator has an electrode structure shown in FIG. An IDT electrode 11 and reflectors 12 and 13 disposed on both sides of the IDT electrode 11 in the elastic wave propagation direction are formed on the piezoelectric substrate 2. Thereby, a 1-port elastic wave resonator is configured.
- a portion in which the series arm resonators S1 to S4 and the parallel arm resonators P1 to P4 are configured is schematically shown by a symbol in which X is surrounded by a rectangular frame. That is, the portions where the series arm resonators S1 to S4 and the parallel arm resonators P1 to P4 are configured are elastic wave element portions, respectively.
- a 1-port elastic wave resonator 9 as a trap filter is connected to the common terminal 4.
- 3IDT type longitudinally coupled resonator type acoustic wave filter sections 14 and 15 are provided between the 1-port type acoustic wave resonator 9 and the balanced terminals 6a and 6b.
- the longitudinally coupled resonator type acoustic wave filter units 14 and 15 are connected in cascade.
- the reception filter 8 is a balanced filter having a pair of balanced terminals 6a and 6b.
- the reception filter may be an unbalanced filter.
- the longitudinally coupled resonator type acoustic wave filter unit is formed with a plurality of IDTs arranged side by side in the propagation direction of the surface acoustic wave propagating on the surface of the piezoelectric substrate 2, and reflectors are provided on both sides of the plurality of IDT groups. Just do it. For example, as a configuration having an odd number of IDT groups of 3 or more, a configuration in which the longitudinally coupled resonator type acoustic wave filter section has five IDTs may be used.
- each part of the 1-port type acoustic wave resonator 9 and the longitudinally coupled resonator type acoustic wave filter units 14 and 15 is schematically illustrated in a shape in which X is surrounded by a frame. Will be shown.
- the portions where the 1-port type acoustic wave resonator 9 and the longitudinally coupled resonator type acoustic wave filter units 14 and 15 are configured are the acoustic wave element units in the present invention.
- the IDT electrode, the reflector, and the connection wiring in each of the acoustic wave element portions can be formed of an appropriate metal or alloy such as Ag, Cu, Pt, or W.
- the acoustic wave device 1 it is necessary to provide a space for preventing the vibration of the acoustic wave element portion from being hindered. However, it is necessary to seal the space in order to suppress frequency fluctuations and improve moisture resistance.
- the support layer 16 is provided around the acoustic wave element portion so that each of the acoustic wave element portions faces the hollow portion.
- the support layer 16 includes a first support layer 17 and a second support layer 18.
- the support layer 16 can be formed of an appropriate insulating material.
- a synthetic resin is preferably used because it can be reduced in weight and cost and can be manufactured more easily.
- a photosensitive resin is used because patterning is easy. By using a photosensitive resin, patterning can be easily performed by a photolithography method or the like. Thereby, the first and second support layers 17 and 18 and the hollow path 19 described later can be easily formed.
- photosensitive resin a conventionally known appropriate photosensitive resin can be used.
- a photosensitive resin a photosensitive polyimide, a photosensitive epoxy resin, a photosensitive silicone resin, or the like can be used.
- Photosensitive polyimide is more desirable because it has moderate rigidity and elasticity and can perform patterning with high accuracy.
- the support layer 16 is disposed in a first support layer 17 provided along the outer peripheral edge of the piezoelectric substrate 2 and a region surrounded by the first support layer 17.
- the 2nd support layer 18 is provided so that the circumference
- a hollow path 19 in which no support layer exists is provided between the second support layer 18 and the first support layer 17, a hollow path 19 in which no support layer exists.
- a hollow support layer having a height lower than the height of the second support layer 18 and the height of the first support layer 17 is partially provided.
- a path 19 may be formed.
- FIG. 2 is a partially cutaway sectional view schematically showing a portion where the parallel arm resonator P3 is formed.
- a parallel arm resonator P3 is formed as the elastic wave element portion.
- a hollow portion A is formed so that the IDT electrode 31 faces. That is, the hollow portion A is surrounded and formed by the second support layer 18 and the cover member 20.
- the first support layer 17 is located outside the second support layer 18 through the hollow path 19.
- the hollow path 19 is provided so as to communicate at least two hollow portions facing the acoustic wave element portion.
- the support layer 16 is divided into the first support layer 17 and the second support layer 18, the area of the second support layer 18 can be reduced.
- FIG. 5 shows an elastic wave device 101 of a comparative example in which a support layer 102 having no hollow path 19 is provided in place of the support layer 16.
- the elastic wave device 101 is the same as the above embodiment except that the support layer 102 is provided.
- the area of the support layer 102 is large.
- the support layer 16 is divided into a first support layer 17 and a second support layer 18.
- the rectangular frame-shaped main body portion 17a of the first support layer 17 is connected to the via conductor forming portion 17b.
- the width of the main body portion 17a of the first support layer 17 is preferably 50 ⁇ m or less in order to prevent air from entering the bonding surface, and preferably 10 ⁇ m or more in order to ensure the bonding strength between the support layer 16 and the cover member 20. .
- the width of the main body portion 17a is 20 ⁇ m.
- the area of the first support layer 17 and the area of the second support layer 18 are smaller than the area of the support layer 102 of the elastic wave device 101 of the comparative example.
- the width of the hollow path 19 is preferably in the range of 10 ⁇ m or more and 100 ⁇ m or less.
- the cover member is not shown, but in the acoustic wave device 1, the cover member 20 is laminated so as to cover the entire upper surface of the support layer 16, as shown in FIG.
- the cover member 20 can be formed of an appropriate insulating material.
- the cover member 20 is made of a synthetic resin. In that case, the manufacturing process can be simplified and the cost can be reduced.
- Such a synthetic resin is not particularly limited, and for example, an epoxy resin or polyimide can be used.
- an epoxy resin When an epoxy resin is used, it can be cured at a temperature of about 170 ° C. to 220 ° C., for example. Therefore, the cover member 20 can be formed by heat curing and bonded onto the support layer 16 by a relatively low temperature curing process.
- joining of the cover member 20 which consists of the above synthetic resins is joined by press-contacting on the support layer 16 toward the other side from the one side of the sheet-like cover member 20 using a roller, for example. It is performed using the process to do. In this case, air may enter the joint surface between the cover member 20 and the support layer 16 to generate voids.
- the support layer 16 is divided into the first and second support layers 17 and 18, the generation of voids is suppressed. For this reason, the leak defect of the hollow part by a void can also be suppressed effectively.
- the elastic wave device 1 may be sealed with a mold resin using a transfer mode method.
- a large pressure is applied to the cover member 20 from the cover member 20 side to the piezoelectric substrate 2 side, and a large pressure is also applied to the joint portion between the cover portion 20 and the support layer 16. Therefore, a part of the cover member may be deformed to interfere with the IDT electrode in the hollow portion.
- this deformation is suppressed by the tension of the cover member 20 generated by the deformation of the hollow path 19. Therefore, the hollow portion having a desired shape can be surely liquid-tightly sealed, more preferably hermetically sealed.
- the first support layer 17 is formed to have a closed shape along the outer peripheral edge of the piezoelectric substrate 2. Therefore, in the second support layer 18, the dimension in the thickness direction connecting the inner wall and the outer wall is relatively small.
- the second support layer 18 is provided on the inner side of the first support layer 17 through the hollow path 19, but has a relatively large area. But the 2nd support layer 18 has an area smaller than the support layer 102 of the elastic wave apparatus 101 of the comparative example shown in FIG.
- voids are more likely to occur as the area of the bonded portion increases. Therefore, in the acoustic wave device 101 shown in FIG. 5, a void as shown by an arrow B may occur so as to connect between the hollow portion and the outside. For this reason, a leak failure tends to occur.
- the elastic wave device 1 of the present embodiment even if a void reaching the hollow portion occurs in the second support layer 18, the other end of this void does not communicate with the outside air, It will remain in the part leading to the path 19. Therefore, a leak failure between the hollow portion and the outside can be reliably suppressed.
- the voids of the support layer 18 do not pose a problem because of the hollow path 19.
- the acoustic wave device 1 of the present embodiment it is possible to reliably suppress fluctuations in frequency characteristics and a decrease in moisture resistance due to a leak failure.
- FIG. 4 is a schematic plan view of an acoustic wave device according to a second embodiment of the present invention. Also in FIG. 4, illustration of the cover member is omitted. That is, the elastic wave device 21 with the cover member removed is shown.
- the support layer 24 includes the first support layer 17 and the second support layer 26.
- the elastic wave device 21 is configured in the same manner as the elastic wave device 1 except that the second support layer 26 is different from the second support layer 18. Therefore, the same reference numerals are assigned to the same parts, and the description of the first embodiment is incorporated.
- the second support layer 26 is formed of the same material as the first support layer 17, but the second support layer 26 further includes a plurality of openings 26 a and 26 b.
- the openings 26 a and 26 b are provided in the second support layer 26. Accordingly, the area of the second support layer 26 is smaller than the area of the second support layer 18 of the first embodiment.
- voids are less likely to occur between the second support layer 26 and the cover member. Even if a void reaching the openings 26a and 26b is formed, that is, even if a void extending from the inner hollow portion to the second hollow portion is generated, the void does not reach the outside. That is, since the air mass mixed in the joint surface between the support layer 16 and the cover member 20 can be discharged to the hollow path 19 disposed in the vicinity of the peripheral edge of the support layer 16, generation of voids is suppressed. can do. Therefore, the occurrence of a leak failure can be more effectively prevented.
- one or more openings may be appropriately formed in the second support layer.
- the first support layer 17 is along the outer peripheral edge of the piezoelectric substrate 2 and has a closed loop shape.
- the first support layer 17 has a closed loop shape, thereby further improving the sealing performance in the acoustic wave device.
- the first support layer may be partially cut away.
- one hollow passage 19 is provided so as to communicate a plurality of hollow portions, but the hollow passage 19 is disposed so as to communicate at least two hollow portions. There is no particular limitation.
- a plurality of hollow paths may be provided.
- the configuration of the plurality of acoustic wave element portions in the acoustic wave device of the present invention is not limited to the configuration of the above embodiment.
- the present invention can be applied to an appropriate acoustic wave device in which a plurality of acoustic wave element portions including acoustic wave resonators and acoustic wave filters are configured on a piezoelectric substrate.
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Abstract
Description
2…圧電基板
3…アンテナ端子
4…共通端子
5…送信端子
6a,6b…平衡端子
7…送信フィルタ
8…受信フィルタ
9…1ポート型弾性波共振子
11…IDT電極
12,13…反射器
14,15…弾性波フィルタ部
16…支持層
17…第1の支持層
17a…本体部
17b…ビア導体形成部
18…第2の支持層
19…中空経路
20…カバー部材
21…弾性波装置
24…支持層
26…第2の支持層
26a,26b…開口部
31…IDT電極
P1~P4…並列腕共振子
S1~S4…直列腕共振子
Claims (5)
- 圧電基板と、
前記圧電基板上に設けられており、少なくとも1つのIDT電極を有する、複数の弾性波素子部と、
前記弾性波素子部が設けられているそれぞれの部分に中空部を構成するために、前記弾性波素子部が設けられている領域の外側の前記圧電基板上に配置されている支持層と、
前記弾性波素子部が設けられているそれぞれの部分を封止し、前記中空部を形成するために、前記支持層上に積層されたカバー部材とを備え、
前記支持層が、前記圧電基板の外周縁に沿うように配置されている第1の支持層と、
前記第1の支持層に囲まれている領域内に配置されており、該領域内において、前記弾性波素子部が設けられている部分を囲むように設けられている第2の支持層とを有し、
前記第1の支持層と前記第2の支持層との間に、中空経路が設けられており、該中空経路が少なくとも2個の前記中空部を連通するように配置されている、弾性波装置。 - 前記第2の支持層の平面積を小さくするように、前記第2の支持層内に開口部が設けられている、請求項1に記載の弾性波装置。
- 前記第1の支持層が閉じたループ状の形状とされている、請求項1または2に記載の弾性波装置。
- 前記複数の中空部が液密封止されている、請求項1~3のいずれか1項に記載の弾性波装置。
- 平面視した場合、前記カバー部材の外周縁が前記圧電基板の外周縁に至っており、ウェハレベルパッケージが構成されている、請求項1または2に記載の弾性波装置。
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JP2014559978A JP5729526B1 (ja) | 2013-08-13 | 2014-07-29 | 弾性波装置 |
KR1020167003605A KR101825499B1 (ko) | 2013-08-13 | 2014-07-29 | 탄성파 장치 |
CN201480042253.3A CN105409120B (zh) | 2013-08-13 | 2014-07-29 | 弹性波装置 |
US15/011,864 US9876484B2 (en) | 2013-08-13 | 2016-02-01 | Elastic wave device with first and second support layers providing a hollow path |
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JP2013168080 | 2013-08-13 | ||
JP2013-168080 | 2013-08-13 |
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US15/011,864 Continuation US9876484B2 (en) | 2013-08-13 | 2016-02-01 | Elastic wave device with first and second support layers providing a hollow path |
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US (1) | US9876484B2 (ja) |
JP (1) | JP5729526B1 (ja) |
KR (1) | KR101825499B1 (ja) |
CN (1) | CN105409120B (ja) |
WO (1) | WO2015022856A1 (ja) |
Cited By (1)
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WO2016158050A1 (ja) * | 2015-03-27 | 2016-10-06 | 株式会社村田製作所 | 弾性波装置、通信モジュール機器及び弾性波装置の製造方法 |
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CN104798302B (zh) * | 2012-12-05 | 2017-07-07 | 株式会社村田制作所 | 弹性波装置的制造方法以及弹性波装置 |
JP6020519B2 (ja) * | 2014-06-20 | 2016-11-02 | 株式会社村田製作所 | 弾性波装置 |
CN110663178B (zh) * | 2017-05-26 | 2023-01-17 | 株式会社村田制作所 | 电子部件以及具备该电子部件的模块 |
CN110707964B (zh) * | 2019-10-10 | 2021-09-21 | 内蒙古工业大学 | 一种压电法电炉炼钢噪音发电装置 |
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JP2003283289A (ja) * | 2002-03-25 | 2003-10-03 | Kyocera Corp | 弾性表面波装置 |
WO2006006343A1 (ja) * | 2004-07-14 | 2006-01-19 | Murata Manufacturing Co., Ltd. | 圧電デバイス |
JP2008235432A (ja) * | 2007-03-19 | 2008-10-02 | Fujitsu Media Device Kk | 電子部品およびその製造方法 |
JP2010278972A (ja) * | 2009-06-01 | 2010-12-09 | Murata Mfg Co Ltd | 弾性波装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2016158050A1 (ja) * | 2015-03-27 | 2016-10-06 | 株式会社村田製作所 | 弾性波装置、通信モジュール機器及び弾性波装置の製造方法 |
JPWO2016158050A1 (ja) * | 2015-03-27 | 2017-10-26 | 株式会社村田製作所 | 弾性波装置、通信モジュール機器及び弾性波装置の製造方法 |
US10164603B2 (en) | 2015-03-27 | 2018-12-25 | Murata Manufacturing Co., Ltd. | Elastic wave device, communication module apparatus, and method for manufacturing elastic wave device |
Also Published As
Publication number | Publication date |
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JP5729526B1 (ja) | 2015-06-03 |
CN105409120A (zh) | 2016-03-16 |
US9876484B2 (en) | 2018-01-23 |
US20160149557A1 (en) | 2016-05-26 |
KR101825499B1 (ko) | 2018-02-05 |
CN105409120B (zh) | 2018-04-10 |
KR20160030991A (ko) | 2016-03-21 |
JPWO2015022856A1 (ja) | 2017-03-02 |
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