JP6652062B2 - 弾性波装置及びその製造方法 - Google Patents
弾性波装置及びその製造方法 Download PDFInfo
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- JP6652062B2 JP6652062B2 JP2016551880A JP2016551880A JP6652062B2 JP 6652062 B2 JP6652062 B2 JP 6652062B2 JP 2016551880 A JP2016551880 A JP 2016551880A JP 2016551880 A JP2016551880 A JP 2016551880A JP 6652062 B2 JP6652062 B2 JP 6652062B2
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- 238000004519 manufacturing process Methods 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims description 95
- 238000005192 partition Methods 0.000 claims description 9
- 230000003071 parasitic effect Effects 0.000 description 14
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 230000005284 excitation Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 235000019687 Lamb Nutrition 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02125—Means for compensation or elimination of undesirable effects of parasitic elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02952—Means for compensation or elimination of undesirable effects of parasitic capacitance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14502—Surface acoustic wave [SAW] transducers for a particular purpose
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/566—Electric coupling means therefor
- H03H9/568—Electric coupling means therefor consisting of a ladder configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
2…入力端子
3…出力端子
4…接続点
5…圧電基板
6,7…グラウンド端子
11〜18…配線部
16a,16b…第1,第2の分岐配線部
21…IDT電極
22,23…反射器
24…支持基板
24a…仕切り壁
31…第1の空洞部
32…第2の空洞部
33,34…配線部
41,51,61,71…弾性波装置
52…音響反射膜
52a〜52e…音響反射膜層
P1〜P4…並列腕共振子
S1〜S4…直列腕共振子
Claims (6)
- 直列腕を有するラダー型フィルタであって、
支持基板と、
前記支持基板上に積層された圧電基板と、
前記圧電基板上に設けられている、入力端子および出力端子と、
前記圧電基板上に設けられており、前記入力端子と前記出力端子とを結ぶ直列腕に設けられているIDT電極と、
前記圧電基板上に設けられており、前記IDT電極に電気的に接続されており、かつ、前記直列腕に設けられている第1配線部及び第2配線部とを備え、
前記第1配線部の少なくとも一部の下方において、第1の空洞部が設けられており、
前記第2配線部の少なくとも一部の下方において、第2の空洞部が設けられており、 前記IDT電極が形成されている領域の下方において、第3の空洞部が設けられており、
前記第1の空洞部と前記第3の空洞部とが、前記支持基板に設けられている仕切り壁により分離されている、ラダー型フィルタ。 - 直列腕を有するラダー型フィルタであって、
支持基板と、
前記支持基板上に積層された圧電基板と、
前記圧電基板上に設けられている、入力端子および出力端子と、
前記圧電基板上に設けられており、前記入力端子と前記出力端子とを結ぶ直列腕に設けられているIDT電極と、
前記圧電基板上に設けられており、前記IDT電極に電気的に接続されており、かつ、前記直列腕に設けられている第1配線部及び第2配線部とを備え、
前記第1配線部の少なくとも一部の下方において、第1の空洞部が設けられており、
前記第2配線部の少なくとも一部の下方において、第2の空洞部が設けられており、
前記IDT電極が形成されている領域の下方において、第3の空洞部が設けられており、
前記第2の空洞部と前記第3の空洞部とが、前記支持基板に設けられている仕切り壁により分離されている、ラダー型フィルタ。 - 前記第1配線部が前記入力端子に接続されており、前記第2配線部が前記出力端子に接続されている、請求項1または2に記載のラダー型フィルタ。
- 前記IDT電極は、第1IDT電極と第2IDT電極を有し、
前記第1配線部は、前記入力端子と前記第1IDT電極とに接続されている配線部であり、
前記第2配線部は、前記出力端子と前記第2IDT電極とに接続されている配線部である、請求項1または2に記載のラダー型フィルタ。 - 弾性波として板波を利用している、請求項1〜4のいずれか1項に記載のラダー型フィルタ。
- 弾性波としてリーキー波を利用している、請求項1〜4のいずれか1項に記載のラダー型フィルタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014200350 | 2014-09-30 | ||
JP2014200350 | 2014-09-30 | ||
PCT/JP2015/075733 WO2016052129A1 (ja) | 2014-09-30 | 2015-09-10 | 弾性波装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2016052129A1 JPWO2016052129A1 (ja) | 2017-05-18 |
JP6652062B2 true JP6652062B2 (ja) | 2020-02-19 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016551880A Active JP6652062B2 (ja) | 2014-09-30 | 2015-09-10 | 弾性波装置及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10615774B2 (ja) |
JP (1) | JP6652062B2 (ja) |
KR (1) | KR102058029B1 (ja) |
CN (1) | CN107078713B (ja) |
WO (1) | WO2016052129A1 (ja) |
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JP2013214954A (ja) | 2012-03-07 | 2013-10-17 | Taiyo Yuden Co Ltd | 共振子、周波数フィルタ、デュプレクサ、電子機器及び共振子の製造方法 |
JP2013223025A (ja) * | 2012-04-13 | 2013-10-28 | Taiyo Yuden Co Ltd | フィルタ装置、フィルタ装置の製造方法及びデュプレクサ |
CN103240220B (zh) * | 2013-05-09 | 2015-06-17 | 电子科技大学 | 一种压电式阵列超声换能器 |
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