WO2015008860A1 - Boîtier pour élément électrique - Google Patents

Boîtier pour élément électrique Download PDF

Info

Publication number
WO2015008860A1
WO2015008860A1 PCT/JP2014/069202 JP2014069202W WO2015008860A1 WO 2015008860 A1 WO2015008860 A1 WO 2015008860A1 JP 2014069202 W JP2014069202 W JP 2014069202W WO 2015008860 A1 WO2015008860 A1 WO 2015008860A1
Authority
WO
WIPO (PCT)
Prior art keywords
container
substrate
electrical
package
heater
Prior art date
Application number
PCT/JP2014/069202
Other languages
English (en)
Japanese (ja)
Inventor
佐藤　昇男
山口　城治
悦 橋本
鈴木　賢哉
神　好人
石井　雄三
直樹 大庭
Original Assignee
日本電信電話株式会社
Ｎｔｔエレクトロニクス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本電信電話株式会社, Ｎｔｔエレクトロニクス株式会社 filed Critical 日本電信電話株式会社
Publication of WO2015008860A1 publication Critical patent/WO2015008860A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/38—Cooling arrangements using the Peltier effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0077—Other packages not provided for in groups B81B7/0035 - B81B7/0074
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0083—Temperature control
    • B81B7/0087—On-device systems and sensors for controlling, regulating or monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H01L2224/48229—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA

Definitions

  • the present invention relates to a package of an electric element that contains the electric element and is hermetically sealed.
  • Non-Patent Document 1 the wavelength selective switch MEMS mirror array module disclosed in Non-Patent Document 1 is affected by a capacitance change due to humidity when it is exposed to the environment due to electric drive.
  • the module as described above is hermetically sealed in the container.
  • FIG. 7 is a configuration diagram showing a configuration of a generally used package.
  • FIG. 7 schematically shows a cross section.
  • This package includes a container 700 composed of a lid 701 and a container body 702.
  • the lid 701 and the container main body 702 are joined by seam welding, solder joining, or the like to form a shielded space 703 in which substances from the outside are blocked.
  • a glass optical window 713 is bonded to a window frame portion 712 made of Kovar.
  • the container main body 702 includes a ceramic substrate 705, a ceramic frame 710, and a Kovar frame 711.
  • the shielding space 703 is obtained by joining the lower surface peripheral part of the window frame 712 and the upper surface of the frame part 711.
  • An electric element 704 such as a laser diode, a MEMS sensor element, or a liquid crystal element is disposed in the shielding space 703 of the container 700 configured as described above.
  • An electric element 704 is fixed on the ceramic substrate 705 by an adhesive layer 709 such as solder. Electrical elements such as laser diodes, MEMS sensor elements, and liquid crystal elements may require temperature adjustment. Therefore, a temperature adjustment unit 721 including a heater 722 is provided outside the side portion of the container main body 702.
  • the container 700 includes an optical window 713 capable of inputting / outputting light to / from the outside, and can perform optical input / output with the electrical element 704 disposed in the container 700.
  • the shielded space 703 provides an operation area of the movable part that constitutes the MEMS. Further, the container 700 hermetically seals the electric element 704 to avoid the influence of humidity change and oxidation, and improve long-term reliability.
  • a plurality of metal pins 706 having a diameter of about 0.5 mm are provided on the back side of the ceramic substrate 705. Such a plurality of metal pins 706 is called a pin grid array (PGA).
  • the electric element 704 is connected to an electric wiring (not shown) in the container main body 702 via a bonding wire 707, and is connected to a metal pin 706 via this electric wiring.
  • the package is fixed by inserting metal pins 706 into the socket substrate 708.
  • the frame portion 710 and the like are generally formed relatively thick.
  • the heater 722 for temperature adjustment is disposed on the outer side of the side of the container body 702 away from the electric element 704.
  • a metal pin 706 is provided between the heater 722 and the electric element 704. For this reason, the heat generated from the heater 722 escapes to the socket substrate 708 via the metal pins 706. Therefore, most of the heat generated from the heater 722 is consumed for heating the metal pins 706 and the socket substrate 708, and therefore, more electric power is required to adjust the temperature of the target electric element 704. was there. Further, in the above structure, for example, in order to obtain a large amount of heat generation, the volume of the heater 722 itself is increased, and there is a problem that the entire structure becomes thick and large.
  • the present invention has been made to solve the above-described problems, and aims to further reduce the size and thickness of an electrical element package that requires temperature adjustment, and to further reduce power consumption.
  • An electrical element package includes an electrical element and a substrate on which the electrical element is mounted, a container that accommodates the electrical element and hermetically seals together with a space above the electrical element, and a temperature control unit provided on the substrate. And a connecting means for making an electrical connection between the electric element and the outside of the container.
  • the substrate on which the electric element is mounted is provided with the temperature adjusting means, the package of the electric element requiring temperature adjustment is further reduced in size and thickness, and the consumption is reduced. An excellent effect that electric power can be further reduced is obtained.
  • FIG. 1A is a cross-sectional view showing a configuration of an electrical element package according to Embodiment 1 of the present invention.
  • FIG. 1B is a cross-sectional view showing the configuration of the electrical element package according to Embodiment 1 of the present invention.
  • FIG. 1C is a plan view showing the configuration of the electrical element package according to Embodiment 1 of the present invention.
  • FIG. 2A is a plan view illustrating a configuration example of a heater.
  • FIG. 2B is a plan view illustrating a configuration example of the heater.
  • FIG. 2C is a plan view illustrating a configuration example of the heater.
  • FIG. 2D is a plan view illustrating a configuration example of the heater.
  • FIG. 1A is a cross-sectional view showing a configuration of an electrical element package according to Embodiment 1 of the present invention.
  • FIG. 1B is a cross-sectional view showing the configuration of the electrical element package according to Embodiment 1 of the present invention.
  • FIG. 3 is a cross-sectional view showing a configuration of an electrical element package according to Embodiment 2 of the present invention.
  • FIG. 4A is a cross-sectional view showing a configuration of an electrical element package according to Embodiment 3 of the present invention.
  • FIG. 4B is a cross-sectional view showing the configuration of the electrical element package according to Embodiment 3 of the present invention.
  • FIG. 4C is a plan view showing a configuration of an electrical element package according to Embodiment 3 of the present invention.
  • FIG. 5A is a cross-sectional view showing a configuration of a package of another electric element according to Embodiment 3 of the present invention.
  • FIG. 5B is a cross-sectional view showing a configuration of a package of another electric element according to Embodiment 3 of the present invention.
  • FIG. 6 is a cross-sectional view showing the configuration of the electrical element package according to Embodiment 4 of the present invention.
  • FIG. 7 is a cross-sectional view showing a configuration of an electrical element package.
  • FIGS. 1A to 1C show a cross section taken along line aa in FIG. 1C
  • FIG. 1B shows a cross section taken along line bb in FIG. 1C.
  • the electrical element package in Embodiment 1 includes an electrical element 103, a substrate 121 on which the electrical element 103 is mounted, and a container 100 that houses the electrical element 103.
  • the container 100 includes a lid portion 101 and a container main body 102.
  • the container 100 hermetically seals the electric element 103 together with the space above the electric element 103.
  • the substrate 121 is made of ceramic which is an insulator.
  • this package includes a heater 105 built in the substrate 121 and a flexible printed wiring 107 that makes electrical connection between the electric element 103 and the outside of the container 100.
  • a part of the substrate 121 constitutes the bottom of the container main body 102.
  • the heater 105 should just be provided in the area
  • the lid portion 101 includes a window frame portion 111 made of Kovar and an optical window 104 made of sapphire.
  • the opening area of the optical window 104 is indicated by a dotted line.
  • the container body 102 includes a substrate 121, a frame portion 122 made of ceramic, and a Kovar frame portion 123.
  • the substrate 121 and the frame portion 122 are integrally molded.
  • the electric element 103 is fixed on the substrate 121 in a region where the heater 105 is incorporated, by an adhesive layer 124 made of solder, resin, or the like.
  • the adhesive layer 124 can be made more thermally conductive if it is made of a metal such as solder.
  • an internal wiring structure 106 made of a conductive material is formed in the container main body 102.
  • a terminal connected to one end of the internal wiring structure 106 is disposed inside the container main body 102.
  • the terminal of the electric element 103 is connected to this terminal via a bonding wire 108.
  • a terminal connected to the other end of the internal wiring structure 106 is disposed outside the container body 102.
  • a flexible printed wiring 107 is connected to this terminal.
  • the flexible printed wiring 107 can electrically connect the electric element 103 and the outside of the container 100.
  • Some internal wiring structures 106 are also connected to the heater 105 inside the substrate 121.
  • the substrate 121 and the container body 102 are formed by laminating an unfired green sheet and a wiring structure and firing them.
  • the green sheet is manufactured as follows. For example, first, a slurry in which the above powder is dispersed in a dispersion medium made of an organic solvent such as 2-propanol is prepared by adding a polyvinyl binder and a surfactant to a metal oxide powder such as alumina. To do. Next, the produced slurry is formed by, for example, a well-known doctor blade method to form a slurry layer, and the slurry layer is dried to remove the dispersion medium to obtain a green sheet.
  • a slurry in which the above powder is dispersed in a dispersion medium made of an organic solvent such as 2-propanol is prepared by adding a polyvinyl binder and a surfactant to a metal oxide powder such as alumina. To do.
  • the produced slurry is formed by, for example, a well-known doctor blade method to form a slurry layer, and the slurry layer is dried to remove the dispersion medium to obtain a green sheet.
  • a wiring pattern and a portion to be the heater 105 are formed by screen printing using a paste material containing a metal material, and a new green sheet is laminated thereon to form the shape of the container body 102 And By firing these, a substrate 121 and a container body 102 which are made of alumina ceramic and have a heater 105 and an internal wiring structure 106 therein can be produced.
  • the heater 105 As described above, by forming the internal wiring structure 106 in the substrate 121 constituting the bottom of the container body 102, the internal wiring structure 106 can be arranged in a wide area in the region where the electric element 103 is fixed. Can do. In this region, the resistance value of the wiring in the region can be increased by designing the shape of the wiring, such as reducing the wiring width of the wiring constituting the internal wiring structure 106 and increasing the wiring length. Moreover, the wiring in the said area
  • the heater 105 adjusts the temperature of the electric element 103 disposed inside the container 100. For example, the temperature adjustment is performed by controlling the output of the heater 105 as the temperature adjusting means so that the temperature value measured by the temperature measuring means (not shown) approaches a predetermined temperature setting value.
  • the package can be thinned. Further, by increasing the area where the region where the heater 105 is formed and the region where the electric element 103 is arranged is increased, or by reducing the distance between the heater 105 and the electric element 103, the heat conduction is consequently increased. Can be improved. As a result, the temperature of the electric element 103 mounted on the substrate 121 can be adjusted with a small amount of heat generation (power consumption). Since the amount of generated heat can be reduced, the volume of the heater 105 itself can be reduced, and the package can be downsized. As described above, it is possible to reduce the thickness of the package and reduce the power consumption of the temperature adjustment mechanism.
  • the internal wiring structure 106 electrically connects the inside and outside of the shielding space in the container 100. Furthermore, the internal wiring structure 106 is electrically connected to the flexible printed wiring 107 outside the shielding space. When the electrical element 103 is inside the shielded space, the electrical element 103 is connected to the outside by connecting the terminal of the electrical element 103 and the terminal disposed inside the shielded space of the internal wiring structure 106 with a bonding wire 108 or the like. Can be electrically connected.
  • the electrical element 103 is, for example, a MEMS sensor element.
  • external light is input to the MEMS sensor element through the optical window 104 through which light passes, or light is output from the MEMS sensor element to the outside.
  • stress is applied to the container body 102 or the electric element 103 due to the difference between the coefficient of thermal expansion of the container 100 and the coefficient of thermal expansion of the external structure. causes a problem that the position shifts with respect to a predetermined optical axis.
  • PGA since the package is mechanically fixed by inserting metal pins into a socket substrate that is an external structure, the above-described problem occurs.
  • a connecting means As a method of electrically connecting to the outside, instead of the flexible printed wiring 107, as a connecting means, either or both of a coil and an antenna are provided on the container body and the outside of the container, and the connecting means in the vicinity of the space is separated. It is good also as a structure which exchanges an electric signal and electric power wirelessly.
  • an optical connecting means including a light receiving element and a light emitting element is provided on the container body and the outside of the container so that the electrical connection between the electric element and the outside of the container is performed wirelessly through optical communication. It may be.
  • a light receiving element may be provided inside the container, and light from a light emitting element disposed outside the container may be received by the light receiving element and converted into electric power or an electric signal.
  • a plurality of metal pins having a diameter of about 0.5 mm are provided on the bottom surface of the package.
  • a plurality of metal leads having a width of about 0.5 mm are provided on each side of the bottom of the package.
  • the package becomes thick and it is difficult to reduce the thickness.
  • since there are a plurality of metal bodies in the vicinity of the heater heat conduction to the outside of the package increases, and heat for heating the built-in electric element leaks.
  • the flexible printed wiring 107 extending in the horizontal direction together with the substrate 121 is used as the connecting means instead of the pins and leads, so that the package can be thinned. is there. Further, since the flexible printed wiring 107 is separated from the heater in the horizontal direction along the substrate 121, heat from the heater is difficult to escape. Furthermore, the flexible printed wiring itself has a low thermal conductivity because it is composed of, for example, a wiring having a cross section of about 200 ⁇ m in width and a thickness of about 20 ⁇ m and a length of several centimeters. Accordingly, the amount of heat generated by the heater can be reduced. Since the amount of generated heat can be reduced, the volume of the heater itself can be reduced and the size can be reduced. According to the first embodiment, it is possible to reduce the thickness of the package of the electric element and reduce the power consumption of the temperature adjustment mechanism.
  • FIGS. 2A to 2D are plan views showing wiring patterns serving as heaters.
  • the heater wiring pattern is formed in a coil shape, and the wiring interval is denser toward the periphery and the wiring interval is coarser toward the center.
  • the heater region where the heater is formed a temperature distribution in which the temperature becomes lower in the peripheral portion is likely to occur due to conduction to the outside.
  • the amount of heat conducted to the outside can be compensated. Thereby, a uniform temperature distribution in the heater region can be realized.
  • adjacent wirings may be arranged in parallel to each other, and current directions of adjacent wirings may be opposite to each other.
  • a resistance heating type heater when a large current flows, a magnetic field is generated according to Ampere's law, and the influence on an electric element and light cannot be controlled.
  • the adjacent magnetic lines cancel out the generated magnetic fields, so that the influence of the magnetic field due to the heater current can be reduced.
  • adjacent wirings may be arranged in parallel to each other, the intervals between the respective wirings may be equal, and the current directions of the adjacent wirings may be the same.
  • it is coiled.
  • the heater current an alternating current (Alternate Current)
  • it is possible to control electric elements and light with an alternating magnetic field generated by the alternating current while generating constant heat if averaged over time it can.
  • the wiring pattern used as a heater can be variously combined by the above-described three configurations.
  • a coil shape may be used, adjacent wirings may be parallel to each other, intervals between the respective wirings may be equal, and current directions of adjacent wirings may be reversed.
  • FIG. 3 is a cross-sectional view showing a configuration of an electrical element package according to Embodiment 2 of the present invention.
  • the electrical element package in Embodiment 2 includes the electrical element 103, a chip carrier 323 on which the electrical element 103 is mounted, and a container 100 that houses the electrical element 103.
  • the container 100 includes a lid portion 101 and a container main body 102.
  • the container 100 hermetically seals the electric element 103 together with the space above the electric element 103.
  • the chip carrier 323 is made of ceramic which is an insulator.
  • the electric element 103 is fixed on the chip carrier 323 by an adhesive layer 324 made of solder, resin, or the like. Note that the adhesive layer 324 can be made more thermally conductive if it is made of a metal such as solder.
  • the package also includes a heater 305 built in the chip carrier 323 and a flexible printed wiring 107 that electrically connects the electric element 103 and the outside of the container 100.
  • a part of the container support substrate 321 constitutes the bottom of the container main body 102.
  • the chip carrier 323 is accommodated in the container 100 together with the electric element 103.
  • the lid portion 101 includes a window frame portion 111 made of Kovar and an optical window 104 made of sapphire.
  • the container body 102 includes a container support substrate 321 made of ceramic, a frame portion 122 made of ceramic, and a frame portion 123 made of Kovar.
  • the container support substrate 321 and the frame part 122 are integrally molded.
  • the chip carrier 323 is fixed on the container support substrate 321 by an adhesive layer 322 made of solder, resin, or the like.
  • the adhesive layer 322 is preferably made of a resin or the like and has a lower thermal conductivity than the adhesive layer 324. By doing so, it is possible to suppress the heat generated from the heater 305 from escaping to the container support substrate 321 side. As a result, the temperature of the electric element 103 can be adjusted with a smaller amount of heat generation than in the first embodiment.
  • the adhesive layer 322 As a material for the adhesive layer 322, it is required that there is little degassing in order to use it in a hermetically sealed container and that the electric element is not displaced with respect to a predetermined optical axis. In order to satisfy the latter requirement, the difference in thermal expansion coefficient from the ceramic constituting the chip carrier and container is small, the curing shrinkage of the adhesive is small, and the glass transition temperature is small in order to reduce misalignment during high temperature storage and operation. Higher is suitable.
  • Epotek's 353ND and NTT Advanced Technology's AT4291A are materials for the adhesive layer 322 as an adhesive that takes into account differences in thermal expansion, cure shrinkage, and glass transition temperature. As mentioned.
  • an internal wiring structure 106 made of a conductive material is formed in the container main body 102.
  • a terminal connected to one end of the internal wiring structure 106 is disposed inside the container main body 102.
  • the terminal of the electric element 103 is connected to this terminal via a bonding wire 108.
  • a terminal connected to the other end of the internal wiring structure 106 is disposed outside the container body 102.
  • a flexible printed wiring 107 is connected to this terminal.
  • the flexible printed wiring 107 can electrically connect the electric element 103 and the outside of the container 100.
  • the container body 102 including the container support substrate 321 is formed by laminating unfired green sheets and wiring structures in the same manner as the substrate 121 (see FIGS. 1A, 1B, and 1C) in Embodiment 1 described above, and firing these. It is formed by doing. A wiring pattern is formed on the green sheet by screen printing using a paste material containing a metal material, and a new green sheet is laminated thereon to obtain the shape of the container body 102. By firing these, the container body 102 made of alumina ceramic and having the internal wiring structure 106 therein can be produced.
  • an internal wiring structure is formed in the chip carrier 323, and in the region where the electric element 103 is fixed, the wiring width of the wiring constituting the built-in internal wiring structure is reduced and the wiring length is increased.
  • the resistance value of the wiring can be increased by designing the shape of the wiring.
  • region can also be comprised from a metal material with high electrical resistance.
  • the wiring formed in this manner becomes a resistance heating element that generates resistance by flowing current, and can become the heater 305.
  • the heater 305 adjusts the temperature of the electric element 103 disposed inside the container 100 and fixed on the chip carrier 323.
  • the package can be thinned. Further, by increasing the area where the region where the heater 305 is formed and the region where the electric element 103 is arranged is increased, or by reducing the separation distance between the heater 305 and the electric element 103, heat conduction is consequently achieved. Can be improved. As a result, the temperature of the target electric element 103 can be adjusted with a small amount of heat generation (power consumption). Since the amount of generated heat can be reduced, the volume of the heater 305 itself can be reduced, and the package can be downsized. As described above, it is possible to reduce the thickness of the package and reduce the power consumption of the temperature adjustment mechanism. Other configurations are the same as those of the first embodiment described above.
  • FIGS. 4A to 4C show a cross section taken along line aa in FIG. 4C
  • FIG. 4B shows a cross section taken along line bb in FIG. 4C.
  • the electrical element package in Embodiment 3 includes an electrical element 103, a substrate 121 on which the electrical element 103 is mounted, and a container 100 that houses the electrical element 103.
  • the container 100 includes a lid portion 101 and a container main body 102.
  • the container 100 hermetically seals the electric element 103 together with the space above the electric element 103.
  • the substrate 121 is made of ceramic which is an insulator.
  • this package includes a heater 105 built in the substrate 121 and a flexible printed wiring 107 that makes electrical connection between the electric element 103 and the outside of the container 100.
  • a part of the substrate 121 constitutes the bottom of the container main body 102.
  • the lid 101 includes a window frame portion 111 made of Kovar and an optical window 104 made of sapphire.
  • the container body 102 includes a substrate 121, a frame portion 122 made of ceramic, and a Kovar frame portion 123.
  • the substrate 121 and the frame portion 122 are integrally molded.
  • the electric element 103 is fixed on the substrate 121 in a region where the heater 105 is incorporated, by an adhesive layer 124 made of solder, resin, or the like.
  • an internal wiring structure 106 made of a conductive material is formed in the container main body 102.
  • a terminal connected to one end of the internal wiring structure 106 is disposed inside the container main body 102.
  • the terminal of the electric element 103 is connected to this terminal via a bonding wire 108.
  • a terminal connected to the other end of the internal wiring structure 106 is disposed outside the container body 102.
  • a flexible printed wiring 107 is connected to this terminal.
  • the flexible printed wiring 107 can electrically connect the electric element 103 and the outside of the container 100.
  • Some internal wiring structures 106 are also connected to the heater 105 inside the substrate 121.
  • the substrate 121 and the container 100 are fixed to a fixed component 401 having an opening.
  • the four corners of the substrate 121 arranged in the opening of the fixed component 401 are fixed to the fixing portion 402 of the fixed component 401 by the adhesive layer 403.
  • the flexible printed wiring 107 is connected to a terminal connection portion 404 formed on the fixed component 401.
  • the adhesive layer 403 is an adhesive composed of a resin.
  • the adhesive layer 403 should just be comprised from the material whose heat conductivity is low compared with metals, such as solder.
  • the region fixed by the adhesive layer 403 is preferably as small as possible, and the adhesive layer 403 is preferably thick. By doing in this way, the thermal conductivity between the board
  • the portion where the terminal connecting portion 404 is fixed may be formed integrally with the fixing component 401 or may be a separate body.
  • the fixed component 401 may be disposed on the same side as the electric element 103 with respect to the substrate 121 constituting the container body 102.
  • the overall thickness does not change even if the fixing component 401 is provided, and the overall thickness can be further reduced.
  • the fourth embodiment is an example in which a Peltier element is used as the temperature adjusting means.
  • the electric element 603 may be accommodated in a container 600 including a container main body 601 and a lid 602 together with a chip carrier 604 composed of a Peltier element.
  • the temperature adjusting means is a chip carrier 604 composed of a Peltier element.
  • the container main body 601 includes a container support substrate 611 and a frame portion 612.
  • the lid portion 602 includes a frame portion 621 and an optical window 622.
  • a metal part 605 penetrating the container support substrate 611 is provided, and the chip carrier 604 is disposed thereon.
  • the metal part 605 may be made of CuW having the same thermal expansion coefficient as that of the container support substrate 611 made of ceramic and having high thermal conductivity.
  • the chip carrier 604 may be fixed on the metal portion 605 with an adhesive layer 607 made of AuSn, and the electric element 603 may be fixed on the chip carrier 604 with an adhesive layer 608 made of AuSn.
  • a heat sink 606 is provided on the back side of the metal part 605 (outside the container 600). As described above, by using the chip carrier 604 formed of Peltier elements, the temperature of the electric element 603 such as a laser diode element can be adjusted more precisely.
  • the electrical element package according to the present invention includes an electrical element, a substrate on which the electrical element is mounted, a container that houses the electrical element and is hermetically sealed together with a space above the electrical element, and the substrate. Temperature control means provided and connection means for making electrical connection between the electric element and the outside of the container are provided. As a result, according to the present invention, the package of the electric element that requires temperature adjustment can be made smaller and thinner, and the power consumption can be further reduced.
  • the substrate may constitute a part of the container. Further, the temperature adjusting means may be built in the substrate.
  • the electric element may be housed in a container together with the substrate, and the temperature adjusting means may be built in the substrate.
  • the substrate may be made of ceramic, and the temperature adjusting means may be made of a resistance heating element.
  • the temperature adjusting means may be a substrate composed of Peltier elements, and the electric element may be housed in a container together with the substrate composed of Peltier elements.
  • the connecting means may be constituted by flexible printed wiring.
  • the connection means may include at least one of a coil and an antenna, and may electrically connect the electrical element and the outside of the container wirelessly.
  • the connection means includes optical connection means including a light receiving element and a light emitting element, and the electrical connection between the electrical element and the outside of the container is performed wirelessly via optical communication. May be.
  • the sealing structure may be resin sealing.
  • SYMBOLS 100 ... Container, 101 ... Cover part, 102 ... Container main body, 103 ... Electrical element, 104 ... Optical window, 105 ... Heater (temperature adjustment means), 106 ... Internal wiring structure, 107 ... Flexible printed wiring (connection means), 108 DESCRIPTION OF SYMBOLS Bonding wire 111 ... Window frame part 121 ... Substrate 122 ... Frame part 123 ... Frame part 124 ... Adhesive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Selon l'invention, un boîtier comprend un élément électrique (103), un substrat (121) permettant de monter l'élément électrique (103), et un réceptacle (100) permettant de loger l'élément électrique (103). Le réceptacle (100) est constitué d'une pièce couvercle (101) et d'un corps de réceptacle (100). Le réceptacle (100) ainsi qu'un espace au-dessus de l'élément électrique (103) scellent de façon étanche à l'air l'élément électrique (103). Ce boîtier est aussi doté d'un élément de chauffage (105) incorporé dans le substrat (121), et de câblage imprimé flexible (107) permettant d'effectuer une connexion électrique entre l'élément électrique (103) et l'extérieur du réceptacle (100).
PCT/JP2014/069202 2013-07-19 2014-07-18 Boîtier pour élément électrique WO2015008860A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-150152 2013-07-19
JP2013150152A JP5782070B2 (ja) 2013-07-19 2013-07-19 電気素子のパッケージ

Publications (1)

Publication Number Publication Date
WO2015008860A1 true WO2015008860A1 (fr) 2015-01-22

Family

ID=52346300

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2014/069202 WO2015008860A1 (fr) 2013-07-19 2014-07-18 Boîtier pour élément électrique

Country Status (2)

Country Link
JP (1) JP5782070B2 (fr)
WO (1) WO2015008860A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016031117A1 (fr) * 2014-08-29 2016-03-03 日本電信電話株式会社 Boîtier pour dispositif électrique
EP3059760A1 (fr) * 2015-02-18 2016-08-24 Siemens Aktiengesellschaft Dispositif électronique
CN110240114A (zh) * 2018-03-07 2019-09-17 泰雷兹公司 包括微机电系统和封装该微机电系统的盒子的电子系统
US11244875B2 (en) 2018-12-06 2022-02-08 Mitsubishi Electric Corporation Semiconductor device and manufacturing method for semiconductor device
JP7470517B2 (ja) 2020-02-05 2024-04-18 古河電気工業株式会社 光学装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6713922B2 (ja) * 2016-12-21 2020-06-24 日本特殊陶業株式会社 光学素子搭載用配線基板
WO2023135929A1 (fr) * 2022-01-11 2023-07-20 ソニーセミコンダクタソリューションズ株式会社 Boîtier

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51144182A (en) * 1975-06-05 1976-12-10 Mitsubishi Electric Corp Indirectly heated semiconductor unit
JPH04348280A (ja) * 1991-05-24 1992-12-03 Honda Motor Co Ltd ヒータ内蔵ハイブリッドｉｃ
JP2004296948A (ja) * 2003-03-27 2004-10-21 Kyocera Corp 光半導体素子用サブキャリアおよび光半導体装置
JP2005032779A (ja) * 2003-07-07 2005-02-03 Mitsui Chemicals Inc パッケージの製造方法
JP2008147452A (ja) * 2006-12-11 2008-06-26 Sharp Corp 光通信デバイス
JP2010021530A (ja) * 2008-07-14 2010-01-28 Honeywell Internatl Inc パッケージ化されたダイヒータ
JP2010225919A (ja) * 2009-03-24 2010-10-07 Sony Corp 半導体装置
JP2010538497A (ja) * 2007-09-05 2010-12-09 ラムバス・インコーポレーテッド 不揮発性半導体メモリ・デバイスにおける欠陥を修復するための方法および装置
JP2012028578A (ja) * 2010-07-23 2012-02-09 Algan Kk 受光センサ及び液体試料分析装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51144182A (en) * 1975-06-05 1976-12-10 Mitsubishi Electric Corp Indirectly heated semiconductor unit
JPH04348280A (ja) * 1991-05-24 1992-12-03 Honda Motor Co Ltd ヒータ内蔵ハイブリッドｉｃ
JP2004296948A (ja) * 2003-03-27 2004-10-21 Kyocera Corp 光半導体素子用サブキャリアおよび光半導体装置
JP2005032779A (ja) * 2003-07-07 2005-02-03 Mitsui Chemicals Inc パッケージの製造方法
JP2008147452A (ja) * 2006-12-11 2008-06-26 Sharp Corp 光通信デバイス
JP2010538497A (ja) * 2007-09-05 2010-12-09 ラムバス・インコーポレーテッド 不揮発性半導体メモリ・デバイスにおける欠陥を修復するための方法および装置
JP2010021530A (ja) * 2008-07-14 2010-01-28 Honeywell Internatl Inc パッケージ化されたダイヒータ
JP2010225919A (ja) * 2009-03-24 2010-10-07 Sony Corp 半導体装置
JP2012028578A (ja) * 2010-07-23 2012-02-09 Algan Kk 受光センサ及び液体試料分析装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016031117A1 (fr) * 2014-08-29 2016-03-03 日本電信電話株式会社 Boîtier pour dispositif électrique
JP2016051773A (ja) * 2014-08-29 2016-04-11 日本電信電話株式会社 電気素子のパッケージ
EP3059760A1 (fr) * 2015-02-18 2016-08-24 Siemens Aktiengesellschaft Dispositif électronique
CN110240114A (zh) * 2018-03-07 2019-09-17 泰雷兹公司 包括微机电系统和封装该微机电系统的盒子的电子系统
CN110240114B (zh) * 2018-03-07 2024-03-29 泰雷兹公司 包括微机电系统和封装该微机电系统的盒子的电子系统
US11244875B2 (en) 2018-12-06 2022-02-08 Mitsubishi Electric Corporation Semiconductor device and manufacturing method for semiconductor device
US11676871B2 (en) 2018-12-06 2023-06-13 Mitsubishi Electric Corporation Semiconductor device and manufacturing method for semiconductor device
DE102019218478B4 (de) 2018-12-06 2023-08-31 Mitsubishi Electric Corporation Halbleitervorrichtung und Herstellungsverfahren für eine Halbleitervorrichtung
JP7470517B2 (ja) 2020-02-05 2024-04-18 古河電気工業株式会社 光学装置

Also Published As

Publication number Publication date
JP5782070B2 (ja) 2015-09-24
JP2015023154A (ja) 2015-02-02

Similar Documents

Publication Publication Date Title
WO2015008860A1 (fr) Boîtier pour élément électrique
JP6577616B2 (ja) 電気素子搭載用パッケージ、アレイ型パッケージおよび電気装置
KR101465837B1 (ko) 콤팩트 하우징
US9585264B2 (en) Package for housing semiconductor element and semiconductor device
JP6788044B2 (ja) 熱電素子内蔵パッケージ
JP2015088641A (ja) 光モジュール
JP2010177732A (ja) 恒温型圧電発振器
JP2014082348A (ja) 光学素子収納用パッケージ、光学フィルターデバイス、光学モジュール、および電子機器
JP6790902B2 (ja) 電子装置
WO2018116502A1 (fr) Carte de câblage pour montage d'élément optique
JP6457864B2 (ja) 光半導体素子パッケージおよび光半導体装置
JP2019021866A (ja) 半導体レーザ装置
WO2016031117A1 (fr) Boîtier pour dispositif électrique
JP2014235072A (ja) 物理量測定センサ
JP2018137534A (ja) 電子部品収納用パッケージ、電子装置および電子モジュール
JPH0837247A (ja) 光半導体素子収納用パッケージ
US10388628B2 (en) Electronic component package
JP6622583B2 (ja) 配線基板および電子装置
JP2016086126A (ja) 半導体素子パッケージおよび半導体装置
WO2013042627A1 (fr) Substrat de montage d'un composant électronique, boîtier pour composant électronique et dispositif électronique
JP5310375B2 (ja) 光送信モジュール
US20230359024A1 (en) Optical device, subassembly of optical device, and method of manufacturing optical device
JP2003007882A (ja) 光半導体気密封止容器及びそれを用いた光半導体モジュール
JP6923474B2 (ja) 半導体素子用パッケージおよび半導体装置
JP2007201945A (ja) 半導体装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14826181

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14826181

Country of ref document: EP

Kind code of ref document: A1