WO2014204694A1 - Led display with wavelength conversion layer - Google Patents

Led display with wavelength conversion layer Download PDF

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Publication number
WO2014204694A1
WO2014204694A1 PCT/US2014/041487 US2014041487W WO2014204694A1 WO 2014204694 A1 WO2014204694 A1 WO 2014204694A1 US 2014041487 W US2014041487 W US 2014041487W WO 2014204694 A1 WO2014204694 A1 WO 2014204694A1
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WO
WIPO (PCT)
Prior art keywords
micro led
layer
wavelength conversion
led device
layers
Prior art date
Application number
PCT/US2014/041487
Other languages
French (fr)
Inventor
Andreas Bibl
Kelly Mcgroddy
Original Assignee
LuxVue Technology Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LuxVue Technology Corporation filed Critical LuxVue Technology Corporation
Priority to CN201480034717.6A priority Critical patent/CN105339996B/en
Priority to JP2016521438A priority patent/JP6290389B2/en
Priority to EP14734362.8A priority patent/EP2997564B1/en
Priority to KR1020157035574A priority patent/KR101704334B1/en
Publication of WO2014204694A1 publication Critical patent/WO2014204694A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • H—ELECTRICITY
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
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    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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    • H—ELECTRICITY
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    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/12044—OLED
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    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Definitions

  • the present invention relates to micro LED devices. More particularly embodiments of the present invention relate to methods and structures for integrating micro LED devices onto a substrate with tunable color emission spectrum.
  • Quantum dots are semiconductor nanocrystals that can be tuned to emit light throughout the visible and infrared spectrum. Due to the small size of 1 to 100 nm, more typically 1 to 20 nm, quantum dots display unique optical properties that are different from those of the corresponding bulk material. The wavelength, and hence color, of the photo emission is strongly dependent on the size of a quantum dot. For an exemplary cadmium selenide (CdSe) quantum dot, light emission can be gradually tuned from red for a 5 nm diameter quantum dot, to the violet region for a 1.5 nm quantum dot. There are generally two types of schemes for quantum dot (QD) excitation. One uses photo excitation, and the other uses direct electrical excitation.
  • QD quantum dot
  • One proposed implementation for quantum dots is integration into the backlighting of a liquid crystal display (LCD) panel.
  • Current white light emitting diode (LED) backlight technology for LCD panels utilizes a cerium doped YAG:Ce (yttrium aluminum garnet) down- conversion phosphor layer over a plurality of blue emitting LED chips. The combination of blue light from the LED chips and a broad yellow emission from the YAG:Ce phosphor results in a near white light. It has been proposed to replace the YAG:Ce phosphor with a blend of quantum dots to achieve the white backlighting.
  • 8,294,168 describes arranging a quantum dot sealing package over a package including a row of light emitting device chips in an edge-type backlight unit light source module.
  • the light source module is positioned at an edge of the LED display panel so that it emits light through a side surface of a light guide plate behind the LED display panel, where the light is reflected toward the LCD display panel.
  • a display panel with one or more wavelength conversion layers and redundancy scheme are disclosed.
  • a display panel includes a display substrate including an array of pixels, with each pixel including multiple subpixels, and each subpixel is designed for a different emission spectrum.
  • a configuration may be a red- green-blue (RGB) pixel, including a subpixel designed for red emission, a subpixel designed for green emission, and a subpixel designed for blue emission.
  • RGB red- green-blue
  • An array of micro LED device pairs are mounted within each subpixel to form a redundancy scheme, and an array of wavelength conversion layers including phosphor particles are formed over the array of micro LED device pairs.
  • Exemplary phosphor particles include quantum dots and particles that exhibit luminescence due to their composition that do not qualify as quantum dots.
  • Exemplary micro LED devices may have a maximum with of 1 ⁇ - 100 ⁇ .
  • the array of wavelength conversion layers can include multiple groups of wavelength conversion layers, with each group designed to emit a different color emission spectrum.
  • the different groups of wavelength conversion layers can be separated into different subpixels. For example, in an RGB pixel arrangement, the different groups of wavelength conversion layers can be designed for red, green, and blue emission and separated into the red emission subpixel, green emission subpixel, and blue emission subpixel,
  • a wavelength conversion layer is not formed over every micro LED device.
  • some micro LED devices can be "naked” and it is not required to convert the emission spectrum of the micro LED device with a wavelength conversion layer.
  • the micro LED devices can all have the same color emission spectrum, or the array of micro LED devices can include groups of micro LED devices designed to emit different color emission spectra, with the different micro LED device groups separated into different subpixels.
  • Various combinations of micro LED devices color emission spectra and wavelength conversion layer specra are available.
  • a pixel can include a pair of "naked” red micro LED devices in a red subpixel, a green emission wavelength conversion layer over a blue micro LED device in a green subpixl, and a "naked” blue micro LED device in a blue subpixel, as an example for one of several manners of forming an RGB pixel arrangement with redundancy pairs.
  • each wavelength conversion layer is formed over only a single micro LED device.
  • Each wavelength conversion layer may also be formed over both micro LED devices of the redundant pair of micro LED devices in a subpixel.
  • Wavelength conversion layers may assume a dome shaped configuration such as hemispherical outer surface, and may be narrowed or flattened.
  • the wavelength conversion layers can also assume an elongated shape, such as elongated dome shaped.
  • Light distribution layers may be formed between the corresponding micro LED devices and the wavelength conversion layers.
  • the light distribution layers are in the form of light pipes, and may be characterized with a lateral length or width that is greater than a thickness of the light distribution layer.
  • Each light pipe may span over a single subpixel, or multiple subpixels. For example, each light pipe may span over no more than one subpixel and the micro LED device pairs mounted within the subpixel. For example, each light pipe may span over more than one subpixel and the micro LED device pairs mounted within the more than one subpixel. Each light pipe may span over all of the multiple subpixels within a corresponding pixel and the micro LED device pairs mounted within the multiple subpixels of the pixel.
  • a reflective bank layer may be formed within each subpixel, where each reflective bank layer is independently addressable from working circuitry within the substrate.
  • the display substrate may be a thin film transistor substrate.
  • a ground line may be formed on or within the display substrate.
  • One or more top electrode layers can be formed to electrically connect the array of micro LED device pairs to the ground line.
  • a first top electrode layer connects the first micro LED device of a pair of micro LED device to the ground line
  • a separate top electrode layer connects the second micro LED device of the pair to the ground line.
  • micro LED device irregularities are within the array of micro LED device pairs.
  • Exemplary irregularities can be missing, defective, or contaminated micro LED devices, and a passivation layer can be formed over the plurality of irregularities to electrically insulate them from one or more top electrode layers, which may be formed directly over the irregularities or adjusted so that they are not formed directly over the irregularities.
  • Repair micro LED devices may be formed within the subpixels corresponding to the plurality of micro LED device irregularities.
  • FIG.1A is a schematic top view illustration of an active matrix display panel in accordance with an embodiment of the invention.
  • FIG. IB is a schematic side-view illustration of the active matrix display panel of FIG. 1A taken along lines X-X and Y-Y prior to the transfer of a pair of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 1C is a schematic side-view illustration of the active matrix display panel of FIG. 1A taken along lines X-X and Y-Y after the transfer of a pair of micro LED devices in accordance with an embodiment of the invention.
  • FIG. ID is a schematic side-view illustration of an active matrix display panel similar to FIG. 1A taken along lines X-X and Y-Y after the transfer of a pair of micro LED devices in accordance with an embodiment of the invention.
  • FIGS. 2A-2D are isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel in accordance with embodiments of the invention.
  • FIGS. 3A-3C are isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with separate wavelength conversion layers formed over individual micro LED devices in accordance with embodiments of the invention.
  • FIGS. 4A-4C are isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single wavelength conversion layer formed over the micro LED devices in accordance with embodiments of the invention.
  • FIG. 5 is an isometric view illustration of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single wavelength conversion layer formed over the reflective bank structure and micro LED devices in accordance with embodiments of the invention.
  • FIGS. 6A-6C are isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with an elongated dome shaped wavelength conversion layer formed over the micro LED devices in accordance with embodiments of the invention.
  • FIG. 7A is an isometric view illustration of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single elongated dome shaped wavelength conversion layer formed over the micro LED devices in accordance with
  • FIG. 7B is an isometric view illustration of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single elongated dome shaped wavelength conversion layer formed over the reflective bank structure and micro LED devices in accordance with embodiments of the invention.
  • FIG. 8A is an isometric view illustration of a pixel including an elongated dome shaped wavelength conversion layer formed over multiple subpixels in accordance with an embodiment of the invention.
  • FIG. 8B is an isometric view illustration of a pixel including both an elongated dome shaped wavelength conversion layer formed over multiple subpixels and an elongated dome shaped wavelength conversion layer formed over a single subpixel in accordance with an embodiment of the invention.
  • FIG. 9A is a combination view illustration of a light pipe around a plurality of micro LED devices and a wavelength conversion layer over the light pipe in accordance with and embodiment of the invention.
  • FIG. 9B is a cross-sectional side view illustration of a light pipe around a pair of micro LED devices and a wavelength conversion layer over the light pipe in accordance with an embodiment of the invention.
  • FIGS. 9C-9D are cross-sectional side view illustrations of a tapered light pipe around a pair of micro LED devices and a wavelength conversion layer over the tapered light pipe in accordance with embodiments of the invention.
  • FIG. 10A is a combination view illustration of a light pipe around a pair of micro LED devices and a pair of reflective layers over the pair of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 10B is a cross-sectional side view illustration of a pair of reflective layers over a wavelength conversion layer and light pipe in accordance with an embodiment of the invention.
  • FIG. IOC is a cross-sectional side view illustration of a pair of reflective layers over a light pipe and underneath a wavelength conversion layer in accordance with an embodiment of the invention.
  • FIG. 10D is a combination view illustration of a light pipe around a pair of micro LED devices and a pair of reflective layers over the pair of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 10E is a cross-sectional side view illustration of a pair of reflective layers over a wavelength conversion layer and light pipe in accordance with an embodiment of the invention.
  • FIG. 10F is a cross-sectional side view illustration of a pair of reflective layers over a light pipe and underneath a wavelength conversion layer in accordance with an embodiment of the invention.
  • FIG. 11 A is a combination view illustration of a display including a plurality of micro LED devices and a plurality of light pipes and wavelength conversion layers over the plurality of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 11B-11E are a schematic side view illustrations of pixels in accordance with an embodiments of the invention.
  • FIG. 1 IF is a combination view illustration of a display including a plurality of micro LED devices and a plurality of light pipes and wavelength conversion layers around the plurality of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 11G-J are schematic side view illustrations of pixels in accordance with an embodiments of the invention.
  • FIG. 12A is a cross-sectional side view illustration of a light pipe and wavelength conversion layer over a reflective bank structure in accordance with an embodiment of the invention.
  • FIG. 12B is a cross-sectional side view illustration orthogonal to the cross-sectional side view illustration in FIG. 12A illustrating a top electrode layer formed over a pair of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 12C is a cross-sectional side view illustration orthogonal to the cross-sectional side view illustration in FIG. 12A illustrating one or more top electrode layers formed over a pair of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 12D is a cross-sectional side view illustration orthogonal to the cross-sectional side view illustration in FIG. 12A illustrating a top electrode layer formed over a plurality of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 12E is a cross-sectional side view illustration orthogonal to the cross-sectional side view illustration in FIG. 12A illustrating one or more top electrode layers formed over a pair of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 12F is a cross-sectional side view illustration of a plurality of micro LED devices with top and bottom contacts within a plurality of reflective bank structures, and a light pipe and wavelength conversion layer over the a plurality of micro LED devices in accordance with an embodiment of the invention.
  • FIGS. 13A-13B are cross-sectional side view illustrations of a plurality of micro LED devices with bottom contacts within a reflective bank structure, and a light pipe and wavelength conversion layer over the plurality of in accordance with embodiments of the invention.
  • FIG. 13C is a cross-sectional side view illustration of a plurality of micro LED devices with bottom contacts within a plurality of reflective bank structures, and a light pipe and wavelength conversion layer over the plurality of micro LED devices in accordance with an embodiment of the invention.
  • FIG. 14A is an illustration of a single side manner for applying wavelength conversion layers over micro LED devices, and a black matrix between subpixels in accordance with an embodiment of the invention.
  • FIG. 14B is an illustration of a top press down manner for applying wavelength conversion layer over micro LED devices, and a black matrix between subpixels in accordance with an embodiment of the invention.
  • FIG. 15 is a top schematic view illustration of a top electrode layer formed over an array of micro LED devices including a variety of configurations in accordance with an embodiment of the invention.
  • FIG. 16 is a top schematic view illustration of a plurality of separate top electrode layers formed over an array of micro LED devices including a variety of configurations in accordance with an embodiment of the invention.
  • FIG. 17 is a top schematic view illustration of a plurality of separate top electrode layers formed over an array of micro LED devices including a variety of configurations in accordance with an embodiment of the invention.
  • FIG. 18 is a top schematic view illustration of a scribed top electrode layer in accordance with an embodiment of the invention.
  • FIG. 19 is a top schematic view illustration of a scribed bottom contact layer in accordance with an embodiment of the invention.
  • FIG. 20 is a top view schematic illustration of a smart pixel display including a redundancy and repair site configuration in accordance with an embodiment of the invention.
  • FIG. 21 is a schematic illustration of a display system in accordance with an embodiment of the invention.
  • Embodiments of the present invention describe a display in which a display substrate includes an array of pixels, with each pixel including multiple subpixels, and each subpixel within a pixel is designed for a different color emission spectrum.
  • the display includes an array of micro LED device pairs, with a pair of micro LED devices being mounted within each subpixel.
  • An array of wavelength conversion layers comprising phosphor particles are formed over the array of micro LED device pairs.
  • the wavelength conversion layer includes a polymer or glass matrix and a dispersion of phosphor particles (e.g. quantum dots that exhibit luminescence due to their size, and particles that exhibit luminescence due to their composition) within the matrix. In this manner, the light emission can be accurately tuned to specific colors in the color spectrum, with improved color gamut.
  • the incorporation of micro LED devices in accordance with embodiments of the invention can be used to combine the performance, efficiency, and reliability of wafer-based LED devices with the high yield, low cost, mixed materials of thin film electronics, for both lighting and display applications.
  • micro LED devices which may be utilized with some embodiments of the invention are described in U.S. Patent No. 8,426,227, U.S. Publication No. 2013/0126081, U.S. Patent Application No. 13/458,932, U.S. Patent Application No. 13/711,554, and U.S. Patent
  • micro LED devices are highly efficient at light emission and consume very little power (e.g., 250 mW for a 10 inch diagonal display) compared to 5-10 watts for a 10 inch diagonal LCD or OLED display, enabling reduction of power consumption of an exemplary display panel incorporating the micro LED devices and wavelength conversion layers.
  • embodiments of the invention provide for configurations that allow phosphor particles of different emission spectra to be separated from one another while still providing good color mixing of the light as perceived by the viewer. Separating the phosphor particles from each other in each subpixel can prevent secondary absorption of light emitted from a phosphor particle emitting a different spectrum (e.g. absorption of green light emitted from a green emitting phosphor particle by a red emitting phosphor particle). This may increase efficiency and reduce unintended color shift.
  • the spatial color separation between different color emitting areas e.g. subpixels
  • the spatial color separation between different color emitting areas can be small enough (e.g.
  • the "micro" LED device scale enables the arrangement of micro LED devices, light distribution layers, and wavelength conversion layers including phosphor particles with small enough pitch (e.g. approximately 100 ⁇ or less) between adjacent micro LED devices or subpixels that the spatial color separation is not perceived by the human eye. In such a configuration, spatially non-uniform color of the light source often associated with non-micro LED device systems can be avoided.
  • embodiments of the invention describe a light distribution layer formed over one or more micro LED devices that allows the light emitted from a micro LED device to spread out prior to entering the wavelength conversion layer, and also decrease the optical intensity of light entering the wavelength conversion layer (and color filter).
  • the spread out light may result in more even emission from the wavelength conversion layer to be formed over the transparent light distribution layer. Consequently reduction of the optical density may reduce thermal degradation of the phosphor particles in wavelength conversion layer, prolonging lifetime of the light emitting device. This may also increase the chances of color conversion by the phosphor particles in the wavelength conversion layer without having to increase the volume loading of the phosphor particles in the wavelength conversion layer.
  • Spreading out of the light and reduction of the optical intensity may also reduce the amount of back reflection and emission from the wavelength conversion layer that is absorbed by a micro LED device.
  • inclusion of the light distribution layer may increase total light emission, increase emission uniformity, and increase sharpness of the color spectrum for the display.
  • embodiments of the invention describe light pipe configurations that can increase the fill factor for micro LED devices, pixels, or subpixels including micro LED devices.
  • Wafer-based LED devices can be characterized as point sources, where light emission occupies a small area and has a concentrated output. If wafer-based LED devices are secured far enough apart that they can be perceived by the human eye (e.g. approximately 100 ⁇ or more) it may be possible that the light emitted from the individual LED devices is perceived as small dots.
  • the light pipe configurations described in accordance with embodiments of the invention can be used to increase the fill factor for micro LED devices, pixels, or subpixels including micro LED devices, so that the individual micro LED devices are not distinguishable by the human eye, and small dots are not perceived.
  • embodiments of the invention describe a redundancy scheme in which a plurality of bonding sites are available for bonding a plurality of micro LED devices within each subpixel, for example, within each bank opening for a subpixel.
  • the redundancy scheme includes bonding layers (e.g. indium posts) at a pair of bonding sites (or more) within a bank opening, with each bonding layer designed to receive a separate micro LED device.
  • the redundancy scheme can also include a repair bonding site within the bank opening that is large enough to receive a micro LED device.
  • the repair bonding site may also optionally include a bonding layer.
  • each bank opening may correspond to a single emission color of a subpixel, and receives a plurality of micro LED devices of the emission color. If one of the micro LED devices of a pair of micro LED devices mounted within a subpixel is defective, then the other micro LED device compensates for the defective micro LED device.
  • the repair bonding site may be used to bond an additional micro LED device if desired.
  • a redundancy and repair configuration is integrated into a backplane structure which can improve emission uniformity across the display panel without having to alter the underlying thin film transistor (TFT) architecture already incorporated in conventional active matrix organic light emitting diode (AMOLED) displays.
  • TFT thin film transistor
  • AMOLED active matrix organic light emitting diode
  • embodiments of the invention may be compatible with conventional TFT backplane technology of AMOLED displays where the micro LED devices replace the organic emission layers of AMOLED display technology.
  • description is made with reference to figures. However, certain embodiments may be practiced without one or more of these specific details, or in combination with other known methods and configurations.
  • numerous specific details are set forth, such as specific configurations, dimensions and processes, etc., in order to provide a thorough understanding of the present invention.
  • well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present invention.
  • spanning, “over”, “to”, “between” and “on” as used herein may refer to a relative position of one layer with respect to other layers.
  • One layer “spanning”, “over”, or “on” another layer or bonded “to” another layer may be directly in contact with the other layer or may have one or more intervening layers.
  • One layer “between” layers may be directly in contact with the layers or may have one or more intervening layers.
  • FIGS. 1A-1D schematic top and side-view illustrations are provided of an active matrix display panel in accordance with an embodiment of the invention.
  • the underlying TFT substrate 102 can be similar to those in a typical AMOLED backplane including working circuitry (e.g. Tl, T2).
  • panel 100 may generally include a pixel area 104 including pixels 106 and subpixels 108 arranged in a matrix, and working circuitry connected to each subpixel for driving and switching the subpixels.
  • the non-pixel area generally includes a data driver circuit 109 connected to a data line of each subpixel to enable data signals (Vdata) to be transmitted to the subpixels, a scan driver circuit 112 connected to scan lines of the subpixels to enable scan signals (Vscan) to be transmitted to the subpixels, a power supply line 114 to transmit a power signal (Vdd) to the TFTs, and a ground ring 116 to transmit a ground signal (Vss) to the array of subpixels.
  • a data driver circuit 109 connected to a data line of each subpixel to enable data signals (Vdata) to be transmitted to the subpixels
  • a scan driver circuit 112 connected to scan lines of the subpixels to enable scan signals (Vscan) to be transmitted to the subpixels
  • a power supply line 114 to transmit a power signal (Vdd) to the TFTs
  • a ground ring 116 to transmit a ground signal (Vss) to the array of subpixels.
  • each of the subpixels 108 may be individually addressed with the corresponding underlying TFT circuitry while a uniform ground signal is supplied to the top of the pixel area 104.
  • openings 131 may be formed in the planarization layer 122 to contact the working circuitry.
  • Exemplary planarization materials include
  • the working circuitry can include traditional 2T1C (two transistors, one capacitor) circuits including a switching transistor, a driving transistor, and a storage capacitor. It is to be appreciated that the 2T1C circuitry is meant to be exemplary, and that other types of circuitry or modifications of the traditional 2T1C circuitry are contemplated in accordance with embodiments of the invention. For example, more complicated circuits can be used to compensate for process variations of the driver transistor and the micro LED devices, or for their instabilities. Furthermore, while embodiments of the invention are described and illustrated with regard to top gate transistor structures in the TFT substrate 102, embodiments of the invention also contemplate the use of bottom gate transistor structures.
  • embodiments of the invention are described and illustrated with regard to a top emission structure, embodiments of the invention also contemplate the use of bottom, or both top and bottom emission structures.
  • embodiments of the invention are described and illustrated below specifically with regard to a high side drive configuration including ground tie lines and ground ring.
  • a LED may be on the drain side of a PMOS driver transistor or a source side of an NMOS driver transistor so that the circuit is pushing current through the p-terminal of the LED.
  • Embodiments of the invention are not so limited may also be practiced with a low side drive configuration in which case the ground tie lines and ground ring become the power line in the panel and current is pulled through the n- terminal of the LED.
  • a patterned bank layer 126 including bank openings 128 is formed over the planarization layer 122.
  • Bank layer 126 may be formed by a variety of techniques such as ink jet printing, screen printing, lamination, spin coating, CVD, and PVD.
  • Bank layer 126 may be may be opaque, transparent, or semi-transparent to the visible wavelength.
  • Bank layer 126 may be formed of a variety of insulating materials such as, but not limited to, photo-definable acrylic, photoresist, silicon oxide (Si0 2 ), silicon nitride (SiN x ), poly(methyl methacrylate) (PMMA), benzocyclobutene (BCB), polyimide, acrylate, epoxy, and polyester.
  • bank player is formed of an opaque material such as a black matrix material.
  • exemplary insulating black matrix materials include organic resins, glass pastes, and resins or pastes including a black pigment, metallic particles such as nickel, aluminum, molybdenum, and alloys thereof, metal oxide particles (e.g. chromium oxide), or metal nitride particles (e.g. chromium nitride).
  • the thickness of the bank layer 126 and width of the bank openings 128 described with regard to the following figures may depend upon the height of the micro LED devices to be mounted within the opening, height of the transfer heads transferring the micro LED devices, and resolution of the display panel.
  • the resolution, pixel density, and subpixel density of the display panel may account for the width of the bank openings 128.
  • the width of the bank openings 128 may be anywhere from a few microns to 206 ⁇ to account for an exemplary 5 ⁇ wide surrounding bank structure between bank openings 128.
  • the width of the bank openings 128 may be anywhere from a few microns to 14 ⁇ to account for an exemplary 5 ⁇ wide surrounding bank structure. Width of the bank structure (i.e.
  • bank openings 128) may be any suitable size, so long as the structure supports the required processes and is scalable to the required PPI.
  • Table 1 provides a list of exemplary implementations in accordance with embodiments of the invention for various red-green-blue (RGB) displays with 1920 x 1080p and 2560x1600 resolutions.
  • the 40 PPI pixel density may correspond to a 55 inch 1920 x 1080p resolution television
  • the 326 and 440 PPI pixel density may correspond to a handheld device with RETINA (RTM) display.
  • RTM RETINA
  • embodiments of the invention are not limited to RGB color schemes or the 1920 x 1080p or 2560x1600 resolutions, and that the specific resolution and RGB color scheme is for illustrational purposes only.
  • the thickness of the bank layer 126 is not too thick in order for the bank structure to function. Thickness may be determined by the micro LED device height and a predetermined viewing angle. For example, where sidewalls of the bank openings 128 make an angle with the planarization layer 122, shallower angles may correlate to a wider viewing angle of the system. In an embodiment, exemplary thicknesses of the bank layer 126 may be between 1 ⁇ - 50 ⁇ . In an embodiment the thickness of the bank layer 126 is within 5 ⁇ of the thickness of the micro LED devices 400.
  • a patterned conductive layer is then formed over the patterned bank layer 126.
  • the patterned conductive layer includes reflective bank layer 142 formed within the bank openings 128 and in electrical contact with the working circuitry.
  • a reflective bank layer 142 can be formed for each subpixel, wherein each reflective bank layer functions as a bottom electrode and is independently addressable from working circuitry within the substrate. Accordingly, all micro LED devices that are bonded to one reflective bank layer of a subpixel are addressed together.
  • the patterned conductive layer may also optionally include the ground tie lines 144 and/or the ground ring 116. As used herein the term ground "ring" does not require a circular pattern, or a pattern that completely surrounds an object.
  • ground line in the form of a ground ring 116 at least partially surrounding the pixel area on three sides
  • embodiments of the invention can also be practiced with a ground line running along one side (e.g. left, right, bottom, top), or two sides (a combination of two of the left, right, bottom, top) of the pixel area.
  • a ground line running along one side (e.g. left, right, bottom, top), or two sides (a combination of two of the left, right, bottom, top) of the pixel area.
  • the patterned conductive layer may be formed of a number of conductive and reflective materials, and may include more than one layer.
  • a patterned conductive layer comprises a metallic film such as aluminum, molybdenum, titanium, titanium-tungsten, silver, or gold, or alloys thereof.
  • the patterned conductive layer may include a stack of layers or metallic films.
  • the patterned conductive layer may include a conductive material such as amorphous silicon, transparent conductive oxides (TCO) such as indium- tin- oxide (ITO) and indium- zinc-oxide (IZO), carbon nanotube film, or a transparent conducting polymer such as poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline, polyacetylene, polypyrrole, and polythiophene.
  • TCO transparent conductive oxides
  • ITO indium- tin- oxide
  • IZO indium- zinc-oxide
  • PEDOT poly(3,4-ethylenedioxythiophene)
  • the patterned conductive layer includes a stack of a conductive material and a reflective conductive material.
  • the patterned conductive layer includes a 3-layer stack including top and bottom layers and a reflective middle layer wherein one or both of the top and bottom layers are transparent.
  • the patterned conductive layer includes a conductive oxide-reflective metal-conductive oxide 3-layer stack.
  • the conductive oxide layers may be transparent.
  • the patterned conductive layer may include an ⁇ -silver-ITO layer stack. In such a configuration, the top and bottom ITO layers may prevent diffusion and/or oxidation of the reflective metal (silver) layer.
  • the patterned conductive layer includes a Ti-Al-Ti stack, or a Mo-Al-Mo-ITO stack.
  • the patterned conductive layer includes an ⁇ - ⁇ - ⁇ - ⁇ - ⁇ stack.
  • the patterned conductive layer is 1 ⁇ or less in thickness.
  • the patterned conductive layer may be deposited using a suitable technique such as, but not limited to, PVD.
  • an insulator layer 146 may then optionally be formed over the TFT substrate 102 covering the sidewalls of the pattered conductive layer.
  • the insulator layer 146 may at least partially cover the bank layer 126 and the reflective bank layer 142, ground tie lines 144, and/or ground ring 116. In the embodiment illustrated the insulator layer 146 completely covers the ground ring 116, however, this is optional.
  • the insulator layer 146 is formed by blanket deposition using a suitable technique such as lamination, spin coating, CVD, and PVD, and then patterned using a suitable technique such as lithography to form openings exposing the reflective bank layers 142 and openings 149 exposing the ground tie lines 149.
  • a suitable technique such as lamination, spin coating, CVD, and PVD
  • ink jet printing or screen printing may be used to form the insulator layer 146 and openings in the insulator layer without requiring lithography.
  • Insulator layer 146 may be formed of a variety of materials such as, but not limited to, Si0 2 , SiN x , PMMA, BCB, polyimide, acrylate, epoxy, and polyester.
  • the insulator layer 146 may be 0.5 ⁇ thick.
  • the insulator layer 146 may be transparent or semi-transparent where formed over the sidewalls of the reflective bank layers 142 within the bank openings 128 as to not significantly degrade light emission extraction of the completed system. Thickness of the insulator layer 146 may also be controlled to increase light extraction efficiency, and also to not interfere with the array of transfer heads during transfer of the array of light emitting devices to the reflective bank structure. As will become more apparent in the following description, the patterned insulator layer 146 is optional, and represents one manner for electrically separating conductive layers.
  • the reflective bank layers 142, ground tie lines 144, and ground ring 116 can be formed of the same conductive layer.
  • the ground tie lines 144 and/or ground ring 116 can be formed of a conductive material different from the reflective bank layer 142.
  • ground tie lines 14 and ground ring 116 may be formed with a material having a higher conductivity than the reflective bank layer 142.
  • ground tie lines 14 and/or ground ring 116 can also be formed within different layers from the reflective bank layers.
  • the ground tie lines 144 and ground ring 116 can also be formed within or below the patterned bank layer 126.
  • openings may be formed through the patterned bank layer 126 when forming the ground tie lines 144 and ground ring 116. Openings may also be formed through the patterned bank layer 126 and planarization layer 122 to contact the ground tie lines 144.
  • the ground ring and ground tie lines 144 may have been formed during formation of the working circuitry of the TFT substrate 102. Accordingly, it is to be appreciated that a number of possibilities exist for forming the ground tie lines 144 and ground ring 116.
  • a plurality of bonding layers 140 may be formed on the reflective bank layer 142 to facilitate bonding of micro LED devices.
  • two bonding layers 140 are illustrated for bonding a pair of micro LED devices.
  • the bonding layer 140 is selected for its ability to be inter-diffused with a bonding layer on the micro LED device (yet to be placed) through bonding mechanisms such as eutectic alloy bonding, transient liquid phase bonding, or solid state diffusion bonding as described in U.S. Patent Application No. 13/749,647.
  • the bonding layer 140 has a melting temperature of 250 °C or lower.
  • the bonding layer 140 may include a solder material such as tin (232 °C) or indium (156.7 °C), or alloys thereof. Bonding layer 140 may also be in the shape of a post, having a height greater than width. In accordance with some embodiments of the invention, taller bonding layers 140 may provide an additional degree of freedom for system component leveling, such as planarity of the array of micro LED devices with the TFT substrate during the micro LED device transfer operation and for variations in height of the micro LED devices, due to the change in height of the liquefied bonding layers as they spread out over the surface during bonding, such as during eutectic alloy bonding and transient liquid phase bonding. The width of the bonding layers 140 may be less than a width of a bottom surface of the micro LED devices to prevent wicking of the bonding layers 140 around the sidewalls of the micro LED devices and shorting the quantum well structures.
  • solder material such as tin (232 °C) or indium (156.7 °C), or alloys thereof.
  • FIG. 1C is a schematic side-view illustration of the active matrix display panel of FIG. 1A taken along lines X-X and Y-Y after the transfer of a pair of micro LED devices 400 in accordance with an embodiment of the invention.
  • the micro LED devices 400 can be transferred and bonded to the substrate 102 as part of an array of micro LED devices 400 using a variety of techniques including a transfer bonding process, transfer using elastomeric stamps, or transfer and bonding using an electrostatic transfer head array, as described in any of U.S. Patent No. 8,333,860, U.S. Patent No 8,349,116, U.S. Patent No. 8,415,771, U.S. Patent No. 8,415,767, or U.S. Patent No.
  • the micro LED devices 400 include a micro p-n diode between a bottom contact 404 and top contact 402.
  • the micro p-n diode is several microns thick, such as 30 ⁇ or less, or even 5 ⁇ or less, with the top and bottom contacts 404, 402 being 0.1 ⁇ - 2 ⁇ thick.
  • the micro p-n diode may include a n-doped layer 409, a p-doped layer 405, and one or more quantum well layers 416 between the n-doped layer and p-doped layer.
  • the n-doped layer 409 is illustrated as being above the p-doped layer 405.
  • the p-doped layer 405 may be above the n-doped layer 409.
  • the micro LED devices 400 may have straight or tapered sidewalls 406 (from top to bottom).
  • the top and bottom contacts 402, 404 may include one or more layers and can be formed of a variety of electrically conducting materials including metals, conductive oxides, and conductive polymers.
  • the top and bottom contacts 402, 404 may be transparent or semi-transparent to the visible wavelength spectrum (e.g. 380 nm - 750 nm) or opaque.
  • the top and bottom contacts 402, 404 may optionally include a reflective layer, such as a silver layer.
  • a conformal dielectric barrier layer 407 may optionally be formed along the sidewalls 406 of the p-n diode to electrically passivate the quantum well 416, and optionally along the top or bottom surface of the micro p-n diode.
  • the conformal dielectric barrier layer 407 may be thinner than the p-n diode so that it forms an outline of the topography of the p-n diode it is formed on.
  • the conformal dielectric barrier layer 407 may be approximately 50-600 angstroms thick aluminum oxide.
  • a bonding layer 414 may be positioned between the micro LED device 400 and the reflective bank layer 142 to facilitate bonding of the bottom contact 404 of micro LED device 400 to the reflective bank layer 142, or other intervening layer.
  • bonding layer 414 includes a material such as indium, gold, silver, molybdenum, tin, aluminum, silicon, or an alloy or alloys thereof.
  • Bonding layer 414 may be an alloy or intermetallic compound of a micro device bonding layer and a bonding layer 140.
  • the embodiments illustrated in FIGS. 1A-1C include a repair bonding site 401 within each bank opening 128 that is large enough to receive a micro LED device.
  • the plurality of bonding layers 140 and repair bonding site 401 create a redundancy and repair configuration within each bank opening 128.
  • the repair bonding site 401 is illustrated as being a bare surface on the reflective bank layer 142.
  • the repair bonding site 401 may also include a bonding layer 140 similarly as the other two bonding layers 140 described and illustrated for the preexisting redundancy scheme.
  • bonding layers 140 are provided on the reflective bank layer 142 at the sites of all of the intended micro LED devices in the redundancy scheme, as well as at the repair site 401.
  • an arrangement of ground tie lines 144 may run between bank openings 128 in the pixel area 104 of the display panel 100.
  • a plurality of openings 149 expose the plurality of ground tie lines 144.
  • the number of openings 149 may or may not have a 1: 1 correlation to the number of columns (top to bottom) of bank openings 128.
  • a ground tie opening 149 is formed for each column of bank openings 128, however, this is not required and the number of ground tie openings 149 may be more or less than the number of columns of bank openings 128.
  • the number of ground tie lines 144 may or may not have a 1: 1 correlation to the number of rows (left to right) of bank openings.
  • a ground tie line 144 is formed for every two rows of bank openings 128, however, this is not required and the number of ground tie lines 144 may have a 1: 1 correlation, or any l:n correlation to the number (n) of rows of bank openings 128.
  • ground tie lines 144 running left and right horizontally across the display panel 100
  • the ground tie lines can run vertically, or both horizontally and vertically to form a grid.
  • ground tie lines are formed between the bank openings 128 in the pixel area and are electrically connected to the ground ring 116 or ground line in the non-display area. In this manner, the ground signal may be more uniformly applied to the matrix of subpixels, resulting in more uniform brightness across the display panel 100.
  • the ground tie lines 144 from a material having better electrical conductivity than the top electrode layer (which is yet to be formed), this may reduce the contact resistance in the electrical ground path.
  • FIG. ID illustrates alternative micro LED devices 400 transferred and bonded to display substrate 102 similarly as described above with regard to FIG. 1C.
  • the micro LED devices in FIG ID includes a micro p-n diode including doped layers 405, 409 opposite one or more quantum well layers 416.
  • the micro LED devices in FIG. ID includes bottom contacts to both the doped layers 405, 409.
  • bottom contact 404 is formed on doped layer 405, and bottom contact 403 is are formed on doped layer 409.
  • a conformal dielectric barrier layer 407 may also be optionally formed on the micro LED devices of FIG. ID, particularly to protect sidewalls 406 including the quantum well layer(s) 416. Since the micro LED devices 400 of FIG. ID includes bottom contacts for both the n-doped and p-doped layers, the reflective layer 142 may also be separated into two electrically separate layers to make electrical contact with bottom contacts 404, 403, respectively. Accordingly, the micro LED device of FIG. ID may be implemented within embodiments of the invention where it is not required to have top and bottom contacts, and the micro LED devices can be operably connected with bottom contacts.
  • FIGS. 2A-2D isometric view illustrations are provided for arrangements of micro LED devices mounted within a reflective bank layer of a subpixel 108 in accordance with embodiments of the invention.
  • FIG. 2A illustrates a reflective bank layer 142 formed along the sidewalls and bottom surface of the bank openings 128 as previously described above, and partially along the top surface of the patterned bank layer 126 adjacent the bank openings 128.
  • a pair of micro LED devices 400 are mounted within the reflective bank layer 142 such that they are evenly spaced from opposite sidewalls along the length of the bank opening.
  • FIG. 2A is illustrative of an exemplary micro LED device redundancy scheme. In the embodiment illustrated in FIG.
  • FIG. 2B is illustrative of an exemplary micro LED device redundancy scheme with repair site.
  • micro LED devices 400 may be of 1 to 100 ⁇ in scale, for example, having a maximum width of approximately 20 ⁇ , 10 ⁇ , or 5 ⁇ .
  • Such micro LED devices are fabricated so that they are poised for pick up from a carrier substrate and transfer to the display substrate, for example, using an array of electrostatic transfer heads. Defective micro LED devices may result from a variety of reasons, such as contamination, stress fractures, and shorting between conductive layers.
  • Micro LED devices also may not be picked up during the transfer operation due to a variety of reasons, such as non-planarity of the carrier substrate, contamination (e.g. particulates), or irregular adhesion of the micro LED devices to the carrier substrate.
  • testing can be performed to detect defective, missing, or contaminated micro LED devices and determine if any repair operations need to be performed.
  • FIGS. 2C-2D illustrate exemplary applications of placing an additional micro LED device at the repair site after a defective, missing, or contaminated micro LED device is detected.
  • the micro LED devices transferred to the display substrate can be inspected. If it is found that a micro LED device 400X is defective or contaminated, a repair micro LED device 400 can then be bonded at the repair site 401 as illustrated in FIG. 2C. Alternatively, it is found that a micro LED device was not transferred to an intended bonding site, a repair micro LED device 400 can then be bonded at the repair site 401 as illustrated in FIG. 2D.
  • FIGS. 3A-3C isometric view illustrations are shown of arrangements of micro LED devices mounted within a reflective bank layer of a subpixel with separate wavelength conversion layers formed over individual micro LED devices in accordance with embodiments of the invention.
  • a separate wavelength conversion layer 310 is formed over each of the individual micro LED devices 400 of a pair of micro LED devices.
  • a repair micro LED device 400 has been transferred to the reflective bank layer 142 and a separate wavelength conversion layer 310 is formed over each of the individual micro LED devices 400 of a pair of micro LED devices.
  • a wavelength conversion layer 310 has not been formed over a defective or contaminated micro LED device 400X.
  • FIG. 3C is similar to that of FIG. 3B, except that a wavelength conversion layer is not formed over the bonding layer 140 corresponding to a missing micro LED device.
  • FIGS. 4A-4C show isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single wavelength conversion layer formed over the micro LED devices in accordance with embodiments of the invention.
  • the arrangement of the micro LED devices in FIGS. 4A-4C is the same as the exemplary
  • the wavelength conversion layer 130 may also be formed over a defective or contaminated micro LED device 400X, or a bonding layer 140 corresponding to a missing micro LED device.
  • the wavelength conversion layer 130 is illustrated as being within the reflective bank layer 142 within the subpixel, however, in other embodiments the wavelength conversion layer 130 is formed over the entire reflective bank layer 142 as illustrated in FIG. 5. In other embodiments, the wavelength conversion layer 130 is formed over at least the bottom surface and sidewalls of the reflective bank layer 142.
  • a black or white matrix material can be formed over portions of the reflective bank layer 142 formed on top of the patterned bank layer 126. In this manner all light emitted from the micro LED devices within the reflective bank layer 142 that is visible by the viewer passes through the wavelength conversion layer. In addition, such a configuration requires reflected light from other sources, such as outside of the display, to pass through the wavelength conversion layer 310.
  • FIG. 5 illustrates the micro LED device 400 pair configuration of FIG. 2B
  • the wavelength conversion layer 310 of FIG. 5 can be formed over any micro LED device configuration mounted within the reflective bank layer 142, including, for example, those previously illustrated in FIG. 2A, FIG. 2C, and FIG. 2D.
  • the wavelength conversion layer 130 in FIG. 3 A- FIG. 5 have been illustrated as being in a dome shaped configuration, which can be formed from the wavelength conversion layer 130, and optionally additional layers.
  • a light distribution layer can be formed underneath the wavelength conversion layer as will be described in further detail in the following description.
  • the dome shape profile may be hemispherical, flattened, or narrowed.
  • a hemispherical profile may improve light extraction and create a Lambertian emission pattern.
  • Flattening or narrowing of the dome profile can be used to adjust viewing angle for the light emitting device.
  • the thickness and profile the layers can be adjusted in order to change the light emission beam profile from the micro LED devices, as well as color over angle characteristics of the display which can be related to edge effects.
  • FIGS. 6A-8B a variety of configurations are illustrated including an elongated dome shaped wavelength conversion layer, which can be formed from the wavelength conversion layer 130, and optionally additional layers.
  • a light distribution layer can be formed underneath the wavelength conversion layer as will be described in further detail in the following description. In this manner, the light distribution layer can function as a light pipe to increase the fill factor for the micro LED devices within the reflective bank layers.
  • FIGS. 6A-6C show isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single elongated wavelength conversion layer formed over the micro LED devices in accordance with embodiments of the invention. The arrangement of the micro LED devices in FIGS.
  • 6A-6C is the same as the exemplary arrangements shown in FIGS 3A-3C, with the difference being that a single elongated wavelength conversion layer 310 is formed over all of the micro LED devices 400 within the subpixel, or within reflective bank layer 142. As shown in FIGS. 6B-6C, the elongated wavelength conversion layer 130 may also be formed over a defective or contaminated micro LED device 400X, or a bonding layer 140 corresponding to a missing micro LED device.
  • the wavelength conversion layer 130 is illustrated as being only on the bottom surface of the reflective bank layer 142 within the subpixel.
  • FIG. 7 A illustrates an embodiment in which the wavelength conversion layer 130 is formed over at least the bottom surface and sidewalls of the reflective bank layer 142.
  • FIG. 7B illustrates an embodiment in which the wavelength conversion layer 130 is formed over the entire reflective bank layer 142. In this manner all light emitted from the micro LED devices within the reflective bank layer 142 that is visible by the viewer passes through the wavelength conversion layer.
  • the configuration illustrated in FIG. 7B requires light that is reflected by the reflective bank layer 142 originating from sources other than the micro LED device, such as outside of the display, to pass through the wavelength conversion layer 310.
  • sources other than the micro LED device such as outside of the display
  • FIGS. 6A-6C and FIG. 7 A a black or white matrix material can be formed over portions of the reflective bank layer 142 formed on top of the patterned bank layer 126. It is to be appreciated, that while FIGS. 7A-7B illustrate the micro LED device 400 pair configuration of FIG. 2B, that the wavelength conversion layer 310 of FIGS. 7A-7B can be formed over any micro LED device configuration mounted within the reflective bank layer 142, including, for example, those previously illustrated in FIG. 2A, FIG. 2C, and FIG. 2D.
  • FIGS. 8A-8B a wavelength conversion layer is illustrated as being formed over or spanning multiple reflective bank layers 142.
  • each reflective bank layer 142 can correspond to a subpixel within a pixel.
  • FIG. 8A is an isometric view illustration of a pixel including an elongated dome shaped wavelength conversion layer 310 formed over multiple reflective bank layers 142 corresponding to multiple subpixels in accordance with an embodiment of the invention.
  • the wavelength conversion layer 310 may be formed over all of the reflective bank layers 142 within a pixel.
  • 8B is an isometric view illustration of a pixel including both an elongated dome shaped wavelength conversion layer 310 formed over multiple reflective bank layers 142 corresponding to multiple subpixels and an elongated dome shaped wavelength conversion layer 310 formed over a single reflective bank layer 142 corresponding to a single subpixel in accordance with an embodiment of the invention.
  • the wavelength conversion layers 310 have been illustrated as single layer systems.
  • a number of additional layers can be formed under or over the wavelength conversion layers.
  • the wavelength conversion layers may be included in a micro lens configuration that may be shaped to change the light emission beam profile from the micro LED devices 400.
  • FIG. 9A a combination view is provided of a light distribution layer in the form of a light pipe around a micro LED device and wavelength conversion layer over the light pipe in accordance with an embodiment of the invention.
  • FIG. 9A is referred to as a combination view because it includes characteristics of an isometric view, plan view for location of the micro LED device, and cross-sectional view of the layers.
  • a specific vertical micro LED device 400 structure It is to be appreciated, that the specific micro LED device 400 illustrated is exemplary and that
  • embodiments of the invention are not limited.
  • embodiments of the invention may also be practiced with LED devices such as those described and illustrated with regard to FIG. ID.
  • the following description is also made with regard to a light distribution layer 320 in the form of a light pipe. It is to be appreciated that such a configuration has been selected in order to adequately describe numerous possible arrangements of layers and shapes, and that the arrangements of layers can also be used to form any of the profiles previously described, such as dome shaped and elongated dome shaped, among others.
  • a light distribution layer 320 is optionally formed around one or more micro LED devices 400 prior to forming the wavelength conversion layer 320.
  • a layer “around" a micro LED device may be formed laterally to, over, or below the micro LED device.
  • the term “around” a micro LED device does not require the layer to be located at all directions from the micro LED device. Rather, the term “around” is intended to refer to a neighboring area through which the light emission beam path from the micro LED device is designed to pass through.
  • the light pipe around the micro LED devices 400 is both lateral to and over the micro LED devices.
  • a light distribution layer 320 in the form of a light pipe may be shaped to both allow refraction of incident light from the micro LED devices 400 out of the light pipe and toward a wavelength conversion layer 310, and to cause internal reflection and lateral spreading of incident light from the micro LED devices 400 within the light distribution layer 320.
  • the light distribution layer 320 may be thicker than the micro LED device 400. In an embodiment, the light distribution layer 320 is 1 ⁇ - 100 ⁇ thick.
  • the lateral length/width of the light distribution layer may be greater than the thickness of the light distribution layer in order to support lateral spreading of the incident light.
  • a light distribution layer 320 may have a lateral length of 100 ⁇ , a lateral width of 100 ⁇ and a height that is equal to or less than the maximum lateral length or width.
  • the light distribution layer 320 may also be dome shaped to create radial spreading of the light refracted out of the light pipe.
  • the dome shape profile may be hemispherical.
  • the dome shape may also be flattened or narrowed.
  • the light distribution layer 320 is elongated dome shaped.
  • the thickness and profile of the light distribution layer 320 provides a base structure upon which a micro lens structure is formed in order to change the light emission beam profile from the micro LED devices 400, as well as color over angle characteristics of the display which can be related to edge effects.
  • light distribution layer 320 is formed by ink jet printing.
  • the light distribution layer 320 is formed by application of a molten glass.
  • Glass compositions can range from a variety of compositions ranging from acrylic grass, crown glass, flint glass, and borosilicate glasses that possess indices of refraction that can be matched to those of a matrix material forming the wavelength conversion layer 310 such as epoxy, silicone, or acrylic.
  • the particular profile of the light distribution layer 320 can be created through several processing techniques. One way is by tailoring surface tension on in ink printed materials. Lithography or other wafer-level optics techniques such as those used to form micro lenses may also be used. Physical techniques such as moulding or imprint lithography may also be used.
  • FIG. 9B is a cross-sectional side view illustration of a light distribution layer in the form of a light pipe around a micro LED device and a wavelength conversion layer over the light pipe in accordance with an embodiment of the invention.
  • incident light emitting from the micro LED devices 400 can both be refracted out of the light distribution layer 320 and into the wavelength conversion layer 310, and also reflected internally within the light distribution layer 320 to cause lateral spreading of the incident light from the micro LED devices where the reflected light is eventually refracted out of the light distribution layer 320 and into the wavelength conversion layer 310.
  • FIGS. 9C-9D are cross-sectional side view illustrations of a light distribution layer in the form of a light pipe and having a tapered profile in accordance with embodiments of the invention.
  • the light distribution layer 320 is tapered toward the lateral edges so that the light distribution layer is thinner at the edges than the middle. Tapering the thickness of the light distribution layer 320 can result in increase reflection, causing the light to eventually refract through the top surface of the light distribution layer rather than through the edges.
  • the pair of micro LED devices are placed nearer one edge of the light distribution layer 320, which is tapered from one side to the other. In this manner, the light distribution layer 320 can guide the light from one side of the light distribution layer to the other where the light is refracted through the top surface rather than through a side of the light distribution layer.
  • light distribution layer 320 may also allow the light emitting from the micro LED devices 400 to spread out prior to entering the wavelength conversion layer 310, which decreases the optical intensity of light entering the wavelength conversion layer.
  • the internally reflected light allows for an improved fill factor of the micro LED devices 400, pixel, or subpixel including the micro LED devices.
  • the spread out light may result in more even emission from the wavelength conversion layer 310 to be formed over the light distribution layer.
  • the light distribution layer 320 may function to increase the length that light travels in the device before being emitted.
  • light distribution layer 320 may increase the fill factor, increase total light emission, increase emission uniformity, and increase sharpness of the color spectrum for the display device.
  • the thickness and profile of the light distribution layer may also provide a base structure from which a micro lens structure is formed in order to change the light emission beam profile from the micro LED devices 400, as well as color over angle characteristics of the display which can be related to edge effects.
  • a matching layer 222 may optionally be formed over the light distribution layer 320 prior to forming the wavelength conversion layer 310.
  • the matching layer 322 may function to match the indices of refraction for the light distribution layer 320 and wavelength conversion layer 310 to reduce back reflection of light.
  • the matching layer 322 is formed of an epoxy, silicone, acrylic, or glass having an index of refraction between that of layers 320, 310.
  • the polymer matrix forming layers 320, 310 is the same, and layers 320, 310 have an identical index of refraction.
  • the index of refraction for layers 320, 310 is within 0.3, or more particularly within 0.1.
  • matching layer is 2 ⁇ or less in thickness.
  • curing of the matching layer 322 may be thermal or UV.
  • a wavelength conversion layer 310 is formed over the micro LED devices 400 and over the optional light distribution layer 320 and matching layer, if present.
  • the wavelength conversion layer includes phosphor particles to control the light emission spectrum.
  • the wavelength conversion layer includes different phosphor particles (different in designed size or shape, or composition) for a blended color emission spectrum (e.g. a combination of any of red, blue, green, yellow, etc).
  • the wavelength conversion layer includes phosphor particles designed for a single color emission spectrum (e.g. red, blue, green, yellow, etc).
  • the wavelength conversion layer 310 is formed of phosphor particles.
  • the wavelength conversion layer is formed of a spray deposition method followed by removal of solvents.
  • the wavelength conversion layer includes a dispersion of phosphor particles in a matrix material such as a polymer or glass matrix material. Other filler materials such as pigment, dye, or scattering particles may also be dispersed within the matrix or among the phosphor particles themselves if no matrix material is present.
  • wavelength conversion layer 310 is formed by ink jet printing, and UV cured.
  • the wavelength conversion layer 310 is formed by application of a molten glass, where the fillers are thermally and chemically stable within the molten glass.
  • the thickness of the wavelength conversion layer 310, as well a concentration of fillers, e.g. phosphor particles, pigment, dye, or light scattering particles are tuned to achieve the requisite color spectrum.
  • the thickness and concentration is tuned to minimize color bleeding from the micro LED devices through the wavelength conversion layer, and maximize emission from the phosphor particles.
  • Thickness of the wavelength conversion layer 310 may also be partly determined by the spacing between micro LED devices. For example, micro LED devices may be spaced more closely together in high resolution display applications compared to lighting applications.
  • the wavelength conversion layer 310 is 5 ⁇ - 100 ⁇ thick, or more specifically 30 ⁇ - 50 ⁇ thick for an exemplary 5 ⁇ wide and 3.5 ⁇ tall micro LED device 400.
  • the thickness of the wavelength conversion layer and concentration of fillers may be designed to allow some light from the micro LED devices 400 to pass through resulting a mix of the micro LED device light spectrum and the converted light spectrum to achieve a blended emission spectrum, for example, white light. Concentration of the color converting materials (e.g. phosphor particles, pigment, dye) as well as thickness of the layers can depend upon the particular application of the light emitting device, for example, if full color conversion (e.g.
  • a volume loading percent of greater than 50% color converting materials may be included in the wavelength conversion layer.
  • the wavelength conversion layer includes greater than 50% volume loading of phosphor particles.
  • the light distribution layer 320 can function to increase the length that light travels in the device before being emitted in order to increase the chances of color conversion by the phosphor particles in the wavelength conversion layer 310 without having to increase the volume loading of the phosphor particles in the wavelength conversion layer.
  • the term "phosphor” may refer to any type of wavelength converting material that will absorb light at one wavelength and emit light at another wavelength.
  • One type of phosphor particle is a quantum dot.
  • Quantum dots are semiconductor materials where the size of the structure is small enough (less than tens of nanometers) that the electrical and optical characteristics differ from the bulk properties due to quantum confinement effects.
  • the emission properties of quantum dots are related to their size and shape in addition to their composition. Fluorescence of quantum dots is a result of exciting a valence electron by absorbing a certain wavelength, followed by the emission of lower energy in the form of photons as the excited electrons return to the ground state.
  • Quantum confinement causes the energy difference between the valence and conduction bands to change based on size and shape of the quantum dot meaning that the energy and wavelength of the emitted photons is determined by the size and shape of the quantum dot.
  • the larger the quantum dot the lower the energy of its fluorescence spectrum. Accordingly, smaller quantum dots emit bluer light (higher energy) and larger quantum dots emit redder light (lower energy). This allows size-dependent tuning of the semiconductor photoluminescence emission wavelength throughout the visible spectrum, with a sharp emission spectrum and high quantum efficiency.
  • quantum dot materials include, but are not limited to, groups II- VI, ⁇ -V, IV-VI semiconductor materials.
  • Some exemplary compound semiconductors include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, A1P, AlSb.
  • Some exemplary alloyed semiconductors include InGaP, ZnSeTe, ZnCdS, ZnCdSe, and CdSeS. Multi-core structures are also possible.
  • Exemplary multi core configurations may include a semiconductor core material, a thin metal layer to protect the core from oxidation and to aid lattice matching, and a shell to enhance the luminescence properties.
  • the shell may function to absorb light at a specific spectrum that is different from the emission spectrum from the quantum dot.
  • the core and shell layers may be formed of the same material, and may be formed of any of the exemplary compound semiconductors or alloyed semiconductors listed above.
  • the metal layer often comprises Zn or Cd.
  • one type of phosphor particle is a particle that exhibits luminescence due to its composition.
  • Some exemplary phosphor particles that exhibit luminescence due to their composition include sulfides, aluminates, oxides, silicates, nitrides, YAG (optionally doped with cerium), and terbium aluminum garnet (TAG) based materials.
  • Other exemplary materials include yellow-green emitting phosphors:
  • Tb 3 Ai 5 0 12 :Ce 3+ (TAG) (yellow- green); orange-red emitting phosphors:
  • (Ca,Sr,Ba)S:Eu 2+ (red); uv-deep blue absorbing phosphors for blue and yellow-green emission: (Mg,Ca,Sr,Ba) 2 Si0 4 :Eu 2+ (uv-blue excitation, yellow emission), (Mg,Ca,Sr,Ba) Si 2 0 7 :Eu 2+ (uv- deep blue excitation, blue-green emission), CagMg(Si0 4 ) 4 Cl 2 :Eu 2+ (uv-deep blue excitation, blue emission); and phosphors that can emit over the full visible spectrum depending on composition and processing (Sr,Ca,Ba)Si x O y N z :Eu 2+ (y>0 green, y 0 red), Y 2 0 2 S:Eu 3+ (blue-green),
  • the particle size for such phosphor particles may be from 1 ⁇ to 20 ⁇ . In other embodiments, the particles size for such phosphor particles can be nanoparticles from 100 nm to 1 ⁇ .
  • the phosphor particles can also include a blend of the 1 ⁇ to 20 ⁇ particles and 100 nm to 1 ⁇ nanoparticles.
  • Nanoparticles may be useful, for example, to reduce the amount of settling when dispersed within a matrix material of a wavelength conversion layer prior to curing or solvent removal, which may result in more even distribution of the nanoparticles and light emission of the light emitting device.
  • Other materials may also be dispersed within the wavelength conversion layer.
  • the other materials may be dispersed within the matrix material, such as glass or polymer matrix of the wavelength conversion layer.
  • a light scattering agent such as a Ti0 2 or A1 2 0 3 particles are dispersed within the wavelength conversion layer.
  • Such light scattering agents may have the effect of increasing the phosphor particle efficiency by increasing scattered light within the wavelength conversion layer.
  • Such light scattering agents may additionally have the effect of reduced bleeding of the micro LED device emitted light through the wavelength conversion layer.
  • Light scattering particles can also be used to control when and where light is emitted from the micro lens structure. For example, a higher
  • concentration of light scattering particles can be placed at the ends of the micro lens structure, e.g. at lateral edges of the wavelength conversion layer, to direct the light out.
  • a pigment or dye may be dispersed within the wavelength conversion layer 310. This may have the effect of incorporating a color filter into the wavelength conversion layer.
  • the pigment or dye may have a color similar to the emission wavelength of the phosphor particle. In this manner, the pigment or die can absorb wavelengths other than those being emitted from the phosphor particle, further sharpening the emission spectrum of the assembly.
  • the micro LED device 400 is a gallium nitride (GaN) based material, and emits a blue (e.g. 450 nm - 495 nm) or deep blue (e.g. 420 nm - 450 nm) light.
  • Quantum dots designed for red emission may be dispersed in the wavelength conversion layer 310 in order to absorb the blue or deep blue emission from the micro LED device 400 and convert the emission wavelength to red.
  • a red pigment or dye may also be dispersed within the wavelength conversion layer 310 to also absorb colors other than red. In this manner, the red pigment or dye may absorb additional blue or deep blue light, thereby reducing bleeding of the unconverted blue or deep blue light.
  • Exemplary pigments include lithol rubine (Red), B-copper thalocyanine (Blue), and diarylide yellow (Yellow). It is to be appreciated that a blue micro LED device and red phosphor particles with red pigment or dye is exemplary and a variety of emission spectrum configurations for the micro LED devices and wavelength conversion layers, where present, are possible.
  • the polymer matrix forming the wavelength conversion layer 310 may be permeable to oxygen or moisture.
  • an oxygen barrier film 324 may optionally be formed in order to protect the wavelength conversion layer 310 from oxygen or moisture absorption.
  • the oxygen barrier film 324 can act as a barrier to oxygen or moisture absorption by the quantum dots, thereby prolonging the lifetime of the quantum dots in the display device.
  • Suitable materials for the oxygen barrier film 324 include, but are not limited to, AI 2 O 3 , S1O 2 , SiN x , and glass.
  • the deposition method for oxygen barrier film 324 may be a low temperature method in order to not thermally degrade the quantum dots or other fillers.
  • Exemplary conformal deposition methods include atomic layer deposition (ALD), sputtering, spin on, and lamination.
  • the oxygen barrier film may also be blanket deposited over the entire substrate, or over all of the micro LED devices.
  • an A1 2 0 3 oxygen barrier film is deposited by atomic layer deposition (ALD).
  • FIGS. lOA-lOC combination and cross-sectional side view illustrations are provided for embodiments including reflective layers 330 directly over the micro LED devices 400 where light distribution layer 320 is in the form of a light pipe.
  • Reflective layers 330 can be provided in different locations, which may result in different effects on the light pipe and wavelength conversion layer configuration.
  • the reflective layers 330 are formed over the wavelength conversion layer 310.
  • the reflective layer can block incident light emitted from the micro LED devices 400 from bleeding through the wavelength conversion layer 310 at the closest location to the micro LED devices, where optical intensity may be the greatest. Reflection of the incident light can also have the effect of laterally spreading the light thereby improving the fill factor.
  • Another effect of the reflective layers 330 may also be to increase the number of passes of the incident light through the wavelength conversion layer.
  • situations are illustrated where the incident light passes through the wavelength conversion layer 310 three times and five times. With each pass, phosphor particles are excited and emit converted spectra. In this manner, the efficiency of the phosphor particles in the wavelength conversion layer 310 can be improved, thereby increasing the converted spectra light intensity of the system, while also improving the fill factor, and providing more even emission from the wavelength conversion layer 310.
  • FIG. 10D-10F illustrate embodiments similar to those illustrated and described with regard to FIGS. 1 OA- IOC.
  • a reflective layer 330 is formed over a micro LED device 400 pair including a repair micro LED device, and optionally not formed over a missing, defective, or contaminated micro LED device 400X.
  • a reflective layer can also be formed over a missing, defective, or contaminated micro LED device 400X.
  • the reflective layers 130 described above and illustrated in FIGS. 10A-10F are illustrated as being flat layers. However, it is not required that the reflective layers 330 are flat. Any configuration is possible, and the reflective layers 330 may be shaped to control the direction of light emission. Reflective layers 330 also are not required to be formed directly above the micro LED devices, and may be formed at other locations such as along the lateral edges of the light pipe or wavelength conversion layer.
  • the light emitting device configurations including the micro LED devices and wavelength conversion layers can be incorporated into a variety of display devices.
  • Exemplary display applications include display signage, display panels, televisions, tablets, phones, laptops, computer monitors, kiosks, digital cameras, handheld game consoles, media displays, ebook displays, or large area signage display.
  • the wavelength conversion layers can be designed to all emit the same color emission spectrum, or the wavelength conversion layers can be divided into multiple groups of wavelength conversion layers, with each group designed to emit a different color emission spectrum. In this manner, the displays can emit any color or patterns of colors depending upon the arrangement and content of the micro LED devices and wavelength conversion layers.
  • white light can be generated by incorporating red (e.g. 620 nm - 750 nm) and green (e.g. 495 nm -570 nm) emitting phosphor particles in a wavelength conversion layer positioned over a blue emitting (e.g. 450 nm - 495 nm) micro LED device.
  • white light can be generated by incorporating multiple micro LED devices into a pixel, with each micro LED device designed to emit the same emission spectrum (e.g. visible spectrum or UV spectrum), and different wavelength conversion layers designed to convert color emission.
  • emission spectrum e.g. visible spectrum or UV spectrum
  • different wavelength conversion layers designed to convert color emission.
  • a combination view illustration is provided of a display including a plurality of micro LED devices 400 bonded to a display substrate 102, a plurality of light distribution layers 320 in the form of light pipes around the plurality of micro LED devices 400, and a plurality of wavelength conversion layers 310 over the plurality of light distribution layers 320.
  • a pixel 106 includes a plurality of micro LED devices 400 within light distribution layers 320 and wavelength conversion layers 310 designed to convert emission, e.g. in an RGB subpixel arrangement.
  • a black matrix material 202 can be formed over the substrate 102 and between the light pipes to absorb light and prevent color bleeding into adjacent pixels 106 or subpixels 108. Alternatively, the black matrix material 202 can be substituted with a white matrix material to reflect light and prevent color bleeding into adjacent pixels 106 or subpixels 108.
  • each subpixel 108 may contain a single phosphor color emission, where present.
  • Each subpixel may likewise contain a different phosphor color emission, where present.
  • secondary absorption of light emitted from a phosphor particle emitting a different spectrum e.g. absorption of green light emitted from a green emitting phosphor particle by a red emitting phosphor particle
  • This may increase efficiency and reduce unintended color shift.
  • configurations can be used for the final output of white light, or any other color of light.
  • a pixel may contain 3 micro LED devices in 3 light pipes, or a pair of micro LED devices in each light pipe, with all the micro LED devices designed to emit blue light, with one red emitting wavelength conversion layer over one light pipe, one green emitting wavelength conversion layer over a second light pipe, and the third light pipe either not including a wavelength conversion layer over it or including a blue emitting wavelength conversion layer over it.
  • white light can be generated by incorporating multiple micro LED devices into a pixel, with each micro LED device designed to emit UV light, with one red emitting conversion layer over a first light pipe, one green emitting wavelength conversion layer over a second light pipe, and one blue emitting wavelength conversion layer over a third light pipe.
  • white light can be generated by incorporating combinations of micro LED devices designed for different emission spectrum and different wavelength conversion layers, or no wavelength conversion layers.
  • white light can be generated with a light pipe around a micro LED device designed for red emission with no overlying wavelength conversion layer, a light pipe around a micro LED device designed for blue emission with an overlying wavelength conversion layer designed for green emission, and a light pipe around a micro LED device designed for blue emission with no overlying wavelength conversion layer.
  • RGB red-green-blue
  • Examples of other subpixel arrangements that can be utilized include, but are not limited to, red-green-blue-yellow (RGBY), red-green-blue-yellow-cyan (RGBYC), or red-green-blue-white (RGBW), or other subpixel matrix schemes where the pixels may have different number of subpixels, such as the displays manufactured under the trademark name PenTile.RTM.
  • FIGS. 1 lB-1 IE are schematic side view illustration of various pixel
  • each micro LED device 400 may be one of a pair of micro LED devices 400 mounted within a reflective bank layer 142 of a subpixel 108, for example, as illustrated and described above with regard to FIGS. 1A-1D.
  • FIG. 1 IB is a schematic side view illustration of a pixel 106 in accordance with an embodiment of the invention.
  • each micro LED device 400 is designed to emit a deep blue (DB) color spectrum.
  • the different wavelength conversion layers 310 can be designed to emit red (R), green (G), and blue (B) in an RGB subpixel arrangement.
  • FIG. 11C is a schematic side view illustration of a pixel 106 in accordance with an embodiment of the invention.
  • each micro LED device 400 is designed to emit a blue (B) color spectrum.
  • the different wavelength conversion layers 310 can be designed to emit red (R) and green (G).
  • a wavelength conversion layer 310 is not formed over the third light distribution layer 320. In this manner an RGB subpixel arrangement is achieved without having to covert the blue light from the blue emitting subpixel.
  • the third light distribution layer 320 can be made thicker than the other two light distribution layers 320 over which wavelength conversion layers 310 are formed in order to achieve similar micro lens characteristics.
  • the thickness of the third light distribution layer 320 may be similar to the total thickness of the first light distribution layer 320 and first red wavelength conversion layer 310 (and any intermediate layers).
  • FIG. 1 ID is a schematic side view illustration of a pixel 106 in accordance with an embodiment of the invention.
  • each micro LED device 400 is designed to emit an ultraviolet (UV) color spectrum.
  • the different wavelength conversion layers 310 can be designed to emit red (R), green (G), and blue (B).
  • FIG. 1 IE is a schematic side view illustration of a pixel 106 in accordance with an embodiment of the invention.
  • the pixel 106 includes micro LED devices 400 designed to emit a red (R) or blue (B) color emission spectrum.
  • a green (G) emitting wavelength conversion layer 310 is formed over one of the light distribution layers 320 around one of the blue emitting micro LED device 400, and a wavelength conversion layer 310 is not required to be formed over the light distribution layers 320 formed around the red emitting micro LED device 400 or the other blue emitting micro LED device 400.
  • Such a configuration may be implemented, for example, when it is possible to fabricate and integrate blue emitting and red emitting micro LED devices that are more efficient than green emitting micro LED devices. In such an embodiment, it may be more efficient to convert blue light to green light with a wavelength conversion layer. Such a configuration may also be useful when providing a broad spectrum at the visual response peak, around 555 nm.
  • Such a configuration may also be useful for increasing the color rendering index (CRI), for example by using a narrow red (or blue) emission spectrum from the micro LED device rather than a broader phosphor particle emission spectrum.
  • CRI color rendering index
  • Such a configuration may also allow for controlling the correlated control temperature (CCT) of the light emitting device, and hence controlling the warmth, without losing lumens due to conversion in the red spectrum.
  • CCT correlated control temperature
  • the light distribution layer 320 formed around the red emitting micro LED device or the other blue emitting micro LED device in FIG. 1 IE may be made thicker than the other light distribution layer over which a wavelength conversion layer is formed in order to achieve similar micro lens characteristics.
  • each light distribution layer 320 in the form of a light pipe spans across multiple subpixels within a pixel 108.
  • the embodiment illustrated in FIG. 1 IF may be an exemplary RGB subpixel arrangement in which a light pipe 320 is formed around a micro LED device pair in each subpixel of the pixel 204, however, other subpixel arrangements are possible such as, but not limited to RGBY, RGBYC, RGBW, or others. In the particular cross- section illustrated, only a single micro LED device 400 of a pair is illustrated.
  • the light pipe spanning across multiple subpixels within a pixel allows for color mixing between subpixels.
  • Such a configuration may be used in applications where the micro LED devices or subpixels are far enough apart that they could otherwise be perceived by the human eye (e.g. approximately 100 ⁇ or more) and perceived as small dots.
  • the color mixing associated with the light pipe configurations of FIGS. 1 IF- 11 J may be used to blend the micro LED device emissions so that they are not perceived by the human eye.
  • One possible application may be in a heads up display where the viewing distance is short, and it is more likely that the viewer is to be capable of perceiving emission spectra from individual subpixels or micro LED devices.
  • each micro LED device 400 in FIGS. 11G- 11 J may be one of a pair of micro LED devices 400 mounted within a reflective bank layer 142 of a subpixel 108, for example, as illustrated and described above with regard to FIGS. 1A-1D.
  • the arrangements of emission spectra for the micro LED devices 400 and wavelength conversion layers 310 is similar to that of FIGS. 1 lB-1 IE, with one difference being that the wavelength conversion layers 310 are formed over only specific portions of the light pipe 320 shared by the micro LED devices 400 in the pixel 108. Additional modifications can also be incorporated into the configurations illustrated in FIGS. 1 lG-11J.
  • the profile of the light pipe 320 can be altered over certain micro LED devices 400.
  • the light pipe 320 can be made thicker over "naked" micro LED devices 400 over which a wavelength conversion layer 310 is not formed.
  • the light pipes 320 of FIGS. 1 lA-11J can also be tapered, for example, as previously described with regard to FIGS. 9C-9D, or include reflective layers as previously described with regard to FIGS. 10A-10F.
  • FIGS. 12A-12F various configurations for implementing micro
  • FIGS. 12A-12F may be combinable with other configurations described herein.
  • the configurations illustrated and described with regard to FIGS. 12A-12E may be combinable with the pixel arrangements described above with regard to FIGS. 1 lA-1 IE, and the configurations illustrated and described with regard to FIGS. 12F may be combinable with the pixel
  • FIG. 12A illustrates a cross-sectional side view across the shorter width of a rectangular shaped reflective bank layer 142 illustrated in FIG. 7B
  • FIG. 12B is an illustration of a longer width, orthogonal to the shorter width, of the rectangular shaped reflective bank layer 142 illustrated in FIG. 7B.
  • FIGS. 12A-12F are provided to illustrate particular examples for integrating micro LED device pairs in a redundancy and repair scheme, combined with a wavelength conversion layers for a tunable color emission spectrum.
  • the particular embodiments illustrated include a wavelength conversion layer 310 formed over an elongated dome shaped light distribution layer 320 in the form a light pipe, where the wavelength conversion layer 310 is also formed over the reflective bank layer 142.
  • FIGS. 12A-12F illustrate various top electrode configurations. However, as previously described in the preceding embodiments and figures, embodiments of the invention are not so limited. Accordingly, embodiments of the invention are not limited to the specific combinations of the top electrode configurations and redundancy and repair schemes illustrated in FIGS. 12A-12F.
  • a pair of micro LED devices 400 are bonded to a reflective bank layer 142 on or within a substrate 102 including an underlying circuitry 210.
  • the micro LED devices 400 can be transferred and bonded to the substrate 102 as part of an array of micro LED devices 400 using a variety of techniques including a transfer bonding process, transfer using elastomeric stamps, or transfer and bonding using an electrostatic transfer head array, as previously described.
  • the display substrate 102 can be examined for defective, missing, or contaminated micro LED devices. In this manner, detection of defective, missing, or contaminated micro LED devices can be used to potentially alter the deposition patterns of the passivation layer 316 and top electrode layers 318, as well as the wavelength conversion layers, and to potentially transfer replacement micro LED devices where required.
  • a sidewall passivation layer 316 can be formed around the sidewalls of the micro LED devices 400.
  • the sidewall passivation layer 316 covers and spans the quantum well structures 408.
  • the sidewall passivation layer 316 may be transparent or semi-transparent to the visible wavelength spectrum so as to not significantly degrade light extraction efficiency from sidewalls of the micro LED devices 400.
  • Sidewall passivation layer 316 may be formed of a variety of materials such as, but not limited to epoxy, silicone, acrylic, poly(methyl methacrylate) (PMMA), benzocyclobutene (BCB), polyimide, and polyester.
  • sidewall passivation layer 316 is formed by ink jet printing around the light emitting devices 400, followed by curing.
  • sidewall passivation layer 316 is cured with ultraviolet (UV) light to minimize volume change as a result of cure and protect the integrity of the bond between the micro LED devices and the reflective bank layer 142, though thermal curing may also be performed.
  • Sidewall passivation layer 316 can also be deposited using other techniques such as slit coating, physical vapor deposition or chemical vapor deposition of a dielectric material such as a nitride or oxide, spin on technique such as a spin on glass, or spray coating followed by solvent evaporation.
  • sidewall passivation layer is an a-staged or b-staged coating already formed over the substrate 102 prior to bonding the micro LED devices 400 wherein the micro LED devices punch through the coating during the transfer and bonding operations, and the coating is then cured after bonding of the micro LED devices 400.
  • the sidewall passivation layer 316 at least partially covers the reflective bank layer 142.
  • the sidewall passivation layer may completely cover the reflective bank layer 142, however, this is not required.
  • Any combination of other insulating layers can be used to electrically insulate the reflective bank layer 142 from other electrically conductive layers.
  • insulator layer 146 can be deposited over edges of the reflective bank layer 142.
  • the reflective bank layer 142 can be discontinuous, for example, so that sidewalls are not electrically connected to the bottom surface of the reflective bank layer 142 in electrical communication with the micro LED devices 400.
  • a sidewall passivation layer 316 may not be required where a conformal dielectric barrier layer 107 is present along sidewalls of the micro LED devices 400.
  • a sidewall passivation layer 316 may be formed in combination with an existing conformal dielectric barrier layer 107.
  • top electrode layer 318 is formed on the micro LED device 400 pairs and in electrical contact with the top contacts 402 and ground tie line 144.
  • top electrode layer 318 may be opaque, reflective, transparent, or semi-transparent to the visible wavelength.
  • Exemplary transparent conductive materials include amorphous silicon, transparent conductive oxides (TCO) such as indium-tin-oxide ( ⁇ ) and indium- zinc-oxide (IZO), carbon nanotube film, or a transparent conductive polymer such as poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline, polyacetylene, polypyrrole, and polythiophene.
  • TCO transparent conductive oxides
  • PEDOT poly(3,4-ethylenedioxythiophene)
  • PEDOT poly(3,4-ethylenedioxythiophene)
  • PEDOT poly(3,4-ethylenedioxythiophene)
  • PEDOT polyaniline
  • polyacetylene polyacetylene
  • polypyrrole polythiophene
  • top electrode layer 318 is approximately 50 nm - 1 ⁇ thick ITO-silver-ITO stack, with the silver layer thin enough to be transparent to the visible wavelength spectrum.
  • the top electrode layer 318 is formed by ink jet
  • PEDOT approximately 50 nm - 1 ⁇ thick PEDOT.
  • Other methods of formation may include chemical vapor deposition (CVD), physical vapor deposition (PVD), or spin coating depending upon the desired area to be coated and any thermal constraints.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • spin coating depending upon the desired area to be coated and any thermal constraints.
  • one or more top electrode layers 318 may be used to electrically connect the micro LED device 400 pairs from the array of subpixels to ground tie line 144.
  • a variety of configurations are possible with different redundancy and repair configurations.
  • FIGS. 12A-12E are limited to exemplary top electrode layer 318 configurations within a single subpixel
  • FIG. 12F shows an exemplary top electrode layer 318 configuration within a single pixel.
  • FIGS. 15-19 A more detailed description is provided with regard to FIGS. 15-19 for various top electrode layer configurations across the pixel area.
  • a single top electrode layer is illustrated as connecting both micro LED devices 400 of the pair to ground 144/116.
  • such a configuration may be used when both micro LED devices 400 have been determined to be transferred to the display substrate and not be defective or contaminated.
  • FIG. 12C an embodiment is illustrated where a micro LED device 400X is determined to be defective or contaminated.
  • a repair micro LED device 400 is then bonded to the reflective bank layer 142, and one or more top electrode layers 318 are then formed over only the operable micro LED device 400 pair to electrically connect them to ground 144/116.
  • FIGS. 12D-12E illustrate embodiments in which a passivation layer 316 can be formed over defective or contaminated micro LED devices 400X, or over a bonding layer 140 of a missing micro LED device.
  • FIG. 12D-12E illustrate embodiments in which a passivation layer 316 can be formed over defective or contaminated micro LED devices 400X, or over a bonding layer 140 of a missing micro LED device.
  • a single top electrode layer 318 is formed over the operable and defective, contaminated, or missing micro LED devices, where the passivation layer 316 prevents electrical contact with the defective, contaminated, or missing micro LED devices.
  • one or more top electrode layers 318 are formed only over the operable micro LED devices.
  • Optional wavelength distribution layer 320, optional matching layer 322, wavelength conversion layer 310, and optional barrier layer 324 may then be formed as described above with regard to FIG. 9A.
  • Black (or white) matrix 202 can be formed from a method that is appropriate based upon the material used, and composition of layers already formed. Manner of formation may also be determined by whether the black (or white) matrix is formed in a single side manner (see FIG. 14A) or a top press down manner (see FIG. 14B).
  • black (or white) matrix 202 can be applied using ink jet printing, sputter and etching, spin coating with lift-off, or a printing method.
  • black (or white) matrix 202 is formed by ink jet printing and UV cured in order to not thermally degrade the phosphor particles in a wavelength conversion layer 110 already formed.
  • Exemplary black matrix materials include carbon, metal films (e.g. nickel, aluminum, molybdenum, and alloys thereof), metal oxide films (e.g. chromium oxide), and metal nitride films (e.g. chromium nitride), organic resins, glass pastes, and resins or pastes including a black pigment or silver particles.
  • Exemplary white matrix materials include metal particles or Ti0 2 particles loaded win a polymer, organic resin, or glass paste, for example.
  • a color filter layer 328 may optionally be formed over the wavelength conversion layer 310 to filter out colors emitting through the wavelength conversion layer 310 other than those desired and to sharpen the emission spectrum of the light emitting device.
  • a red color filter layer 328 may be placed over a wavelength conversion layer 310 including red emitting phosphor particles in order to filter out colors other than red
  • a green color filter layer 328 may be placed over a wavelength conversion layer 310 including green emitting phosphor particles in order to filter out colors other than green
  • a blue color filter layer 328 may be placed over a wavelength conversion layer 310 including blue emitting phosphor particles in order to filter out colors other than blue.
  • a blue color filer may not be necessary over a blue wavelength conversion layer 310 wherein the underlying micro LED device 400 is deep blue emitting.
  • a blue color filer may not be necessary over naked (e.g. no wavelength conversion layer) blue emitting underlying micro LED device 400. It is to be appreciated that these configurations are exemplary and a variety of
  • Suitable materials for the color filter include pigments or dyes as previously described above.
  • color filter layer 328 includes a pigment or dye dispersed in a transparent matrix material.
  • the matrix material is the same polymer used for the wavelength conversion layer 310, such as epoxy, silicone, or acrylic.
  • the color filter may be formed using similar techniques, such as ink jet printing with UV cure.
  • the wavelength conversion layer 310 has an index of refraction within 0.3, or more particularly within 0.1, of the index of refraction for the wavelength conversion layer 310.
  • the color filter layer 328 is formed after the black matrix 202. In other embodiments, the color filter layer 328 is formed before the black matrix 202.
  • FIG. 12F a cross-sectional side view illustration is provided of a light pipe around a plurality of micro LED devices with top and bottom contacts within a plurality of reflective bank structures, and a wavelength conversion layer over the light pipe in accordance with embodiments of the invention.
  • the configuration illustrated in FIG. 12F is similar to that of FIG. 12A, with the difference being that the light pipe 320 is formed over multiple subpixels in a pixel, with each reflective bank layer 142 corresponding to a separate subpixel that is independently addressable by its own underlying circuitry 210.
  • the wavelength conversion layer 310 may be wider than the openings in the patterned bank layer 304 including the multiple reflective bank layers 142.
  • FIGS. 13A-13B are cross-sectional side view illustrations of a light pipe around a plurality of micro LED devices with bottom contacts within a reflective bank structure, and a wavelength conversion layer over the light pipe in accordance with embodiments of the invention.
  • FIG.13C is a cross-sectional side view illustrations of a light pipe around a plurality of micro LED devices with bottom contacts within a plurality of reflective bank structures, and a wavelength conversion layer over the light pipe in accordance with embodiments of the invention.
  • FIGS. 13A-13C are similar to those of FIGS. 12A-12B and 12F with one difference being that the micro LED devices 400 include bottom contacts 404, 403 rather than both a bottom and top contact.
  • Sidewall passivation layer 316 also may be omitted, and the light pipe 320 or other layers can electrically insulate the reflective bank structure layers 142A, 142B and quantum well structure 408. As illustrated, reflective bank structure layers 142A, 142B are electrically insulated from one another.
  • FIG. 14A is an illustration a single side fabrication manner for applying wavelength conversion layers and a black (or white) matrix between subpixels in accordance with an embodiment.
  • the wavelength conversion layers 310 and matrix 202 are formed on substrate 102 prior to applying a cover 500 over the light emitting devices.
  • Top cover 500 can be rigid or flexible, and can be applied in a variety of manners.
  • top cover 500 is a transparent plastic material and is laminated onto the display substrate 102.
  • top cover 500 is a rigid glass plate that is applied over the light display substrate 102, and sealed around the peripheral edges of the display substrate 102 with a sealant.
  • a getter material may optionally be placed inside the sealed region containing the micro LED devices and the wavelength conversion layer 310 to absorb moisture, particularly if the wavelength conversion layer includes quantum dots.
  • FIG. 14B is an illustration of a top press down manner for applying wavelength conversion layers and a black (or white) matrix between subpixels in accordance with an embodiment.
  • the matrix 202, wavelength conversion layer 310, oxygen barrier film 324, and optional color filter layer 328 are formed on the top cover 500 and pressed down over the array of micro LED devices 400 and light distribution layers 320.
  • the top cover 500 of FIG. 14B is a rigid glass plate, and is sealed around the peripheral edges of the display substrate 102 with a sealant.
  • a getter material may optionally be placed inside the sealed region containing the micro LED devices and the wavelength conversion layer 310 to absorb moisture, particularly if the wavelength conversion layer includes quantum dots. Either of the top cover configurations of FIGS. 14A-14B can be used when forming the display devices described and illustrated herein.
  • FIG. 15 is a top schematic view illustration of an array of micro LED devices including a variety of configurations described in FIGS. 12A-12F in accordance with
  • a top electrode layer 318 is formed over a plurality of bank openings 128, and may be formed over a plurality of subpixels or pixels 106. In an embodiment, the top electrode layer 318 is formed over all of the micro LED devices 400 in the pixel area.
  • FIG. 12B The embodiment illustrated in FIG. 12B is illustrated in the labeled pixel 106 in which the micro LED device 400 pairs are transferred without detection of any missing, defective, or contaminated micro LED devices.
  • the repair micro LED sites 401 are open, and repair micro LED devices have not been transferred.
  • FIG. 12D is also illustrated as one of the red- emitting subpixels in FIG. 15 including a repair micro LED device, where the top electrode layer 318 is formed over both the red emitting micro LED devices 400 and the defective or contaminated micro LED device 400X, where the defective or contaminated micro LED device 400X is covered with the passivation layer 316.
  • FIG. 15 including a repair micro LED device, where the top electrode layer 318 is formed over both the blue emitting micro LED devices 400 and the bonding layer 140 corresponding to a missing micro LED device.
  • FIG. 16 is a top schematic view illustration of an array of micro LED devices including a variety of configurations described in FIGS. 12A-12F in accordance with
  • the arrangements of micro LED devices 400 are the same as those described above with regard to FIG. 15.
  • the embodiments illustrated in FIG. 16 differ from those illustrated in FIG. 15 particularly in formation of a plurality of separate top electrode layers 318.
  • the length of the top electrode layer 318 can be determined based upon whether or not a replacement micro LED device is added.
  • the top electrode layer 318 may also be formed over the bonding site 401.
  • the top electrode layers 318 are formed by ink jet printing or screen printing. Inkjet printing in particular may be suitable since it is a non-contact printing method. Conventional AMOLED backplane processing sequences typically blanket deposit the tope electrode layer in a deposition chamber followed by singulation of the individual backplanes from a larger substrate. In accordance with embodiments of the invention, a display substrate 102 can be singulated from a larger substrate prior to transferring the array of micro LED devices. In an embodiment ink jet printing or screen printing provides a practical approach for patterning the individual top electrode layers without requiring a separate mask layer for each particular configuration in the redundancy and repair scheme. Line width can also vary for the top electrode layers 118 depending upon application.
  • the line width may approach that of the subpixel area.
  • the line width may be minimal.
  • line widths as low as approximately 15 microns may be accomplished with commercially available inkjet printers, and line widths as low as approximately 30 microns may be accomplished with commercially available screen printers. Accordingly, the line width may be more or less than the maximum width of the micro LED devices.
  • FIG. 17 is a top schematic view illustration of an array of micro LED devices including a variety of configurations described in FIGS. 12A-12F in accordance with
  • the arrangements of micro LED devices 400 are the same as those described above with regard to FIGS. 15-16.
  • the embodiments illustrated in FIG. 17 differ from those illustrated in FIG. 16 particularly in formation of the top electrode layers 318.
  • the embodiments illustrated in FIG. 16 were shown as altering the length of the top electrode layers 318, while the embodiments illustrated in FIG. 17 are shown as altering the path of the top electrode layers 318, and/or number of top electrode layers 318.
  • the top electrode layers 318 illustrated in FIG. 17 may correspond to those illustrated in FIG. 12C and FIG. 12E.
  • the exemplary embodiments of the invention may correspond to those illustrated in FIG. 12C and FIG. 12E.
  • a separate top electrode layer 318 can be formed for each micro LED device 400 in the subpixel.
  • a single top electrode layer 318 can be formed for multiple micro LED devices 400 in a subpixel where the path is adjusted to avoid a bonding layer 140, or alternatively a defective or contaminated micro LED device.
  • adjusting the path of the top electrode layers 318 can be used in the alternative to, or in addition to, adjusting deposition of the passivation layer 316 to cover defective or contaminated micro LED devices or the bonding sites of missing micro LED devices.
  • top electrode layer(s) 318 may provide an additional benefit during electrical testing of the display substrate 102 after formation of the top electrode layer(s) 318. For example, prior to formation of the top electrode layer 318 it may not have been possible to detect certain defects resulting in shorting of a micro LED device 400S. The implication of a shorted micro LED device 400S could result in a dark subpixel in which all of the current flows through the shorted micro LED devices 400S rather than any of the other micro LED devices in the subpixel. In the embodiment illustrated in FIG. 18 the top electrode layer 318 connected to a shorted micro LED device 400S is cut using a suitable technique such as laser scribing.
  • the top electrode layer 318 to the micro LED device 400S can be cut, allowing the redundant and/or repair micro LED device to provide the emission from the subpixel.
  • FIG. 19 illustrates an alternative embodiment where rather than cutting or scribing the top electrode layer 318, the reflective bank layer 142 can be formed to include multiple bottom contact areas 124 that can be cut using a suitable technique such as laser scribing to segregate irregular micro LED devices.
  • the bottom contact area 124 includes separate landing areas for the micro LED devices.
  • the bottom contact area 124 supporting the micro LED device 400S is cut using a suitable technique such as laser scribing to segregate the irregular micro LED device so that it is not in electrical communication with the underlying TFT circuitry through filled opening 131.
  • FIG. 20 is a top view schematic illustration of a smart pixel display including a redundancy and repair site configuration in accordance with an embodiment of the invention.
  • the display panel 200 includes a substrate 201 which may be opaque, transparent, rigid, or flexible.
  • a smart pixel area 206 may include separate subpixels of different emission colors, and a micro controller chip 208 including the working circuitry described above with regard to the TFT substrate.
  • the micro LED devices 400 and micro controller chip 208 are both transferred to the same side or surface of the substrate 201.
  • Electrical distribution lines can connect the micro controller chip 208 to the data driver circuit 109 and scan driver circuit 112 similarly as with a TFT substrate.
  • reflective bank layer structures can be formed on the substrate 201 similarly as described above for the TFT substrate to contain the micro LED devices 400 and repair bonding site 401.
  • a top electrode layer 318, or separate top electrode layers 318 can connect the micro LED devices 400 to a ground tie line 144 or ground ring 116 similarly as described above with regard to the TFT substrate configuration.
  • Wavelength conversion layers, and other optional layers, can also be formed over the micro LED devices 400 to generate the determined color emission spectrum as described above.
  • similar color emission configurations including wavelength conversion layers, redundancy, and repair site configurations can be formed with the smart pixel
  • FIG. 21 illustrates a display system 2100 in accordance with an embodiment.
  • the display system houses a processor 2110, data receiver 2120, a display 2130, and one or more display driver ICs 2140, which may be scan driver ICs and data driver ICs.
  • the data receiver 2120 may be configured to receive data wirelessly or wired.
  • Wireless may be implemented in any of a number of wireless standards or protocols including, but not limited to, Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev- DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond.
  • the one or more display driver ICs 2140 may be physically and electrically coupled to the display 2130.
  • the display 2130 includes one or more micro LED devices
  • the display 2130 may include a plurality of micro LED devices, a plurality of light distribution layers around the micro LED devices, and a plurality of wavelength conversion layers over the light distribution layers.
  • the display system 2100 may include other components. These other components include, but are not limited to, memory, a touch-screen controller, and a battery. In various implementations, the display system 2100 may be a television, tablet, phone, laptop, computer monitor, kiosk, digital camera, handheld game console, media display, ebook display, or large area signage display. [00145] In utilizing the various aspects of this invention, it would become apparent to one skilled in the art that combinations or variations of the above embodiments are possible for integrating micro LED devices and wavelength conversion layers into display applications. Although the present invention has been described in language specific to structural features and/or methodological acts, it is to be understood that the invention defined in the appended claims is not necessarily limited to the specific features or acts described. The specific features and acts disclosed are instead to be understood as particularly graceful implementations of the claimed invention useful for illustrating the present invention.

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Abstract

A display and method of manufacture are described. The display may include a substrate including an array of pixels with each pixel including multiple subpixels, and each subpixel within a pixel is designed for a different color emission spectrum. An array of micro LED device pairs are mounted within each subpixel to provide redundancy. An array of wavelength conversions layers comprising phosphor particles are formed over the array of micro LED device pairs for tunable color emission spectrum.

Description

LED DISPLAY WITH WAVELENGTH CONVERSION LAYER
BACKGROUND
FIELD
[0001] The present invention relates to micro LED devices. More particularly embodiments of the present invention relate to methods and structures for integrating micro LED devices onto a substrate with tunable color emission spectrum.
BACKGROUND INFORMATION
[0002] Quantum dots are semiconductor nanocrystals that can be tuned to emit light throughout the visible and infrared spectrum. Due to the small size of 1 to 100 nm, more typically 1 to 20 nm, quantum dots display unique optical properties that are different from those of the corresponding bulk material. The wavelength, and hence color, of the photo emission is strongly dependent on the size of a quantum dot. For an exemplary cadmium selenide (CdSe) quantum dot, light emission can be gradually tuned from red for a 5 nm diameter quantum dot, to the violet region for a 1.5 nm quantum dot. There are generally two types of schemes for quantum dot (QD) excitation. One uses photo excitation, and the other uses direct electrical excitation.
[0003] One proposed implementation for quantum dots is integration into the backlighting of a liquid crystal display (LCD) panel. Current white light emitting diode (LED) backlight technology for LCD panels utilizes a cerium doped YAG:Ce (yttrium aluminum garnet) down- conversion phosphor layer over a plurality of blue emitting LED chips. The combination of blue light from the LED chips and a broad yellow emission from the YAG:Ce phosphor results in a near white light. It has been proposed to replace the YAG:Ce phosphor with a blend of quantum dots to achieve the white backlighting. U.S. Patent No. 8,294,168 describes arranging a quantum dot sealing package over a package including a row of light emitting device chips in an edge-type backlight unit light source module. The light source module is positioned at an edge of the LED display panel so that it emits light through a side surface of a light guide plate behind the LED display panel, where the light is reflected toward the LCD display panel.
SUMMARY OF THE INVENTION
[0004] A display panel with one or more wavelength conversion layers and redundancy scheme are disclosed. In an embodiment a display panel includes a display substrate including an array of pixels, with each pixel including multiple subpixels, and each subpixel is designed for a different emission spectrum. For example, such a configuration may be a red- green-blue (RGB) pixel, including a subpixel designed for red emission, a subpixel designed for green emission, and a subpixel designed for blue emission. An array of micro LED device pairs are mounted within each subpixel to form a redundancy scheme, and an array of wavelength conversion layers including phosphor particles are formed over the array of micro LED device pairs. Exemplary phosphor particles include quantum dots and particles that exhibit luminescence due to their composition that do not qualify as quantum dots. Exemplary micro LED devices may have a maximum with of 1 μιη - 100 μιη. The array of wavelength conversion layers can include multiple groups of wavelength conversion layers, with each group designed to emit a different color emission spectrum. The different groups of wavelength conversion layers can be separated into different subpixels. For example, in an RGB pixel arrangement, the different groups of wavelength conversion layers can be designed for red, green, and blue emission and separated into the red emission subpixel, green emission subpixel, and blue emission subpixel,
respectively.
[0005] In some embodiments a wavelength conversion layer is not formed over every micro LED device. For example, some micro LED devices can be "naked" and it is not required to convert the emission spectrum of the micro LED device with a wavelength conversion layer. The micro LED devices can all have the same color emission spectrum, or the array of micro LED devices can include groups of micro LED devices designed to emit different color emission spectra, with the different micro LED device groups separated into different subpixels. Various combinations of micro LED devices color emission spectra and wavelength conversion layer specra are available. For example, a pixel can include a pair of "naked" red micro LED devices in a red subpixel, a green emission wavelength conversion layer over a blue micro LED device in a green subpixl, and a "naked" blue micro LED device in a blue subpixel, as an example for one of several manners of forming an RGB pixel arrangement with redundancy pairs.
[0006] The size and shape of wavelength conversion layers can also be varied. In some embodiments, each wavelength conversion layer is formed over only a single micro LED device. Each wavelength conversion layer may also be formed over both micro LED devices of the redundant pair of micro LED devices in a subpixel. Wavelength conversion layers may assume a dome shaped configuration such as hemispherical outer surface, and may be narrowed or flattened. The wavelength conversion layers can also assume an elongated shape, such as elongated dome shaped. Light distribution layers may be formed between the corresponding micro LED devices and the wavelength conversion layers. In some embodiments the light distribution layers are in the form of light pipes, and may be characterized with a lateral length or width that is greater than a thickness of the light distribution layer. Each light pipe may span over a single subpixel, or multiple subpixels. For example, each light pipe may span over no more than one subpixel and the micro LED device pairs mounted within the subpixel. For example, each light pipe may span over more than one subpixel and the micro LED device pairs mounted within the more than one subpixel. Each light pipe may span over all of the multiple subpixels within a corresponding pixel and the micro LED device pairs mounted within the multiple subpixels of the pixel.
[0007] A reflective bank layer may be formed within each subpixel, where each reflective bank layer is independently addressable from working circuitry within the substrate. For example, the display substrate may be a thin film transistor substrate. A ground line may be formed on or within the display substrate. One or more top electrode layers can be formed to electrically connect the array of micro LED device pairs to the ground line. In an embodiment, a first top electrode layer connects the first micro LED device of a pair of micro LED device to the ground line, and a separate top electrode layer connects the second micro LED device of the pair to the ground line. In an embodiment micro LED device irregularities are within the array of micro LED device pairs. Exemplary irregularities can be missing, defective, or contaminated micro LED devices, and a passivation layer can be formed over the plurality of irregularities to electrically insulate them from one or more top electrode layers, which may be formed directly over the irregularities or adjusted so that they are not formed directly over the irregularities. Repair micro LED devices may be formed within the subpixels corresponding to the plurality of micro LED device irregularities.
BRIEF DESCRIPTION OF THE DRAWINGS
[0008] FIG.1A is a schematic top view illustration of an active matrix display panel in accordance with an embodiment of the invention.
[0009] FIG. IB is a schematic side-view illustration of the active matrix display panel of FIG. 1A taken along lines X-X and Y-Y prior to the transfer of a pair of micro LED devices in accordance with an embodiment of the invention.
[0010] FIG. 1C is a schematic side-view illustration of the active matrix display panel of FIG. 1A taken along lines X-X and Y-Y after the transfer of a pair of micro LED devices in accordance with an embodiment of the invention. [0011] FIG. ID is a schematic side-view illustration of an active matrix display panel similar to FIG. 1A taken along lines X-X and Y-Y after the transfer of a pair of micro LED devices in accordance with an embodiment of the invention.
[0012] FIGS. 2A-2D are isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel in accordance with embodiments of the invention.
[0013] FIGS. 3A-3C are isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with separate wavelength conversion layers formed over individual micro LED devices in accordance with embodiments of the invention.
[0014] FIGS. 4A-4C are isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single wavelength conversion layer formed over the micro LED devices in accordance with embodiments of the invention.
[0015] FIG. 5 is an isometric view illustration of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single wavelength conversion layer formed over the reflective bank structure and micro LED devices in accordance with embodiments of the invention.
[0016] FIGS. 6A-6C are isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with an elongated dome shaped wavelength conversion layer formed over the micro LED devices in accordance with embodiments of the invention.
[0017] FIG. 7A is an isometric view illustration of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single elongated dome shaped wavelength conversion layer formed over the micro LED devices in accordance with
embodiments of the invention.
[0018] FIG. 7B is an isometric view illustration of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single elongated dome shaped wavelength conversion layer formed over the reflective bank structure and micro LED devices in accordance with embodiments of the invention.
[0019] FIG. 8A is an isometric view illustration of a pixel including an elongated dome shaped wavelength conversion layer formed over multiple subpixels in accordance with an embodiment of the invention.
[0020] FIG. 8B is an isometric view illustration of a pixel including both an elongated dome shaped wavelength conversion layer formed over multiple subpixels and an elongated dome shaped wavelength conversion layer formed over a single subpixel in accordance with an embodiment of the invention.
[0021] FIG. 9A is a combination view illustration of a light pipe around a plurality of micro LED devices and a wavelength conversion layer over the light pipe in accordance with and embodiment of the invention.
[0022] FIG. 9B is a cross-sectional side view illustration of a light pipe around a pair of micro LED devices and a wavelength conversion layer over the light pipe in accordance with an embodiment of the invention.
[0023] FIGS. 9C-9D are cross-sectional side view illustrations of a tapered light pipe around a pair of micro LED devices and a wavelength conversion layer over the tapered light pipe in accordance with embodiments of the invention.
[0024] FIG. 10A is a combination view illustration of a light pipe around a pair of micro LED devices and a pair of reflective layers over the pair of micro LED devices in accordance with an embodiment of the invention.
[0025] FIG. 10B is a cross-sectional side view illustration of a pair of reflective layers over a wavelength conversion layer and light pipe in accordance with an embodiment of the invention.
[0026] FIG. IOC is a cross-sectional side view illustration of a pair of reflective layers over a light pipe and underneath a wavelength conversion layer in accordance with an embodiment of the invention.
[0027] FIG. 10D is a combination view illustration of a light pipe around a pair of micro LED devices and a pair of reflective layers over the pair of micro LED devices in accordance with an embodiment of the invention.
[0028] FIG. 10E is a cross-sectional side view illustration of a pair of reflective layers over a wavelength conversion layer and light pipe in accordance with an embodiment of the invention.
[0029] FIG. 10F is a cross-sectional side view illustration of a pair of reflective layers over a light pipe and underneath a wavelength conversion layer in accordance with an embodiment of the invention.
[0030] FIG. 11 A is a combination view illustration of a display including a plurality of micro LED devices and a plurality of light pipes and wavelength conversion layers over the plurality of micro LED devices in accordance with an embodiment of the invention.
[0031] FIG. 11B-11E are a schematic side view illustrations of pixels in accordance with an embodiments of the invention. [0032] FIG. 1 IF is a combination view illustration of a display including a plurality of micro LED devices and a plurality of light pipes and wavelength conversion layers around the plurality of micro LED devices in accordance with an embodiment of the invention.
[0033] FIG. 11G-J are schematic side view illustrations of pixels in accordance with an embodiments of the invention.
[0034] FIG. 12A is a cross-sectional side view illustration of a light pipe and wavelength conversion layer over a reflective bank structure in accordance with an embodiment of the invention.
[0035] FIG. 12B is a cross-sectional side view illustration orthogonal to the cross-sectional side view illustration in FIG. 12A illustrating a top electrode layer formed over a pair of micro LED devices in accordance with an embodiment of the invention.
[0036] FIG. 12C is a cross-sectional side view illustration orthogonal to the cross-sectional side view illustration in FIG. 12A illustrating one or more top electrode layers formed over a pair of micro LED devices in accordance with an embodiment of the invention.
[0037] FIG. 12D is a cross-sectional side view illustration orthogonal to the cross-sectional side view illustration in FIG. 12A illustrating a top electrode layer formed over a plurality of micro LED devices in accordance with an embodiment of the invention.
[0038] FIG. 12E is a cross-sectional side view illustration orthogonal to the cross-sectional side view illustration in FIG. 12A illustrating one or more top electrode layers formed over a pair of micro LED devices in accordance with an embodiment of the invention.
[0039] FIG. 12F is a cross-sectional side view illustration of a plurality of micro LED devices with top and bottom contacts within a plurality of reflective bank structures, and a light pipe and wavelength conversion layer over the a plurality of micro LED devices in accordance with an embodiment of the invention.
[0040] FIGS. 13A-13B are cross-sectional side view illustrations of a plurality of micro LED devices with bottom contacts within a reflective bank structure, and a light pipe and wavelength conversion layer over the plurality of in accordance with embodiments of the invention.
[0041] FIG. 13C is a cross-sectional side view illustration of a plurality of micro LED devices with bottom contacts within a plurality of reflective bank structures, and a light pipe and wavelength conversion layer over the plurality of micro LED devices in accordance with an embodiment of the invention.
[0042] FIG. 14A is an illustration of a single side manner for applying wavelength conversion layers over micro LED devices, and a black matrix between subpixels in accordance with an embodiment of the invention. [0043] FIG. 14B is an illustration of a top press down manner for applying wavelength conversion layer over micro LED devices, and a black matrix between subpixels in accordance with an embodiment of the invention.
[0044] FIG. 15 is a top schematic view illustration of a top electrode layer formed over an array of micro LED devices including a variety of configurations in accordance with an embodiment of the invention.
[0045] FIG. 16 is a top schematic view illustration of a plurality of separate top electrode layers formed over an array of micro LED devices including a variety of configurations in accordance with an embodiment of the invention.
[0046] FIG. 17 is a top schematic view illustration of a plurality of separate top electrode layers formed over an array of micro LED devices including a variety of configurations in accordance with an embodiment of the invention.
[0047] FIG. 18 is a top schematic view illustration of a scribed top electrode layer in accordance with an embodiment of the invention.
[0048] FIG. 19 is a top schematic view illustration of a scribed bottom contact layer in accordance with an embodiment of the invention.
[0049] FIG. 20 is a top view schematic illustration of a smart pixel display including a redundancy and repair site configuration in accordance with an embodiment of the invention.
[0050] FIG. 21 is a schematic illustration of a display system in accordance with an embodiment of the invention.
DETAILED DESCRIPTION OF THE INVENTION
[0051] Embodiments of the present invention describe a display in which a display substrate includes an array of pixels, with each pixel including multiple subpixels, and each subpixel within a pixel is designed for a different color emission spectrum. The display includes an array of micro LED device pairs, with a pair of micro LED devices being mounted within each subpixel. An array of wavelength conversion layers comprising phosphor particles are formed over the array of micro LED device pairs. In an embodiment, the wavelength conversion layer includes a polymer or glass matrix and a dispersion of phosphor particles (e.g. quantum dots that exhibit luminescence due to their size, and particles that exhibit luminescence due to their composition) within the matrix. In this manner, the light emission can be accurately tuned to specific colors in the color spectrum, with improved color gamut. In addition, the incorporation of micro LED devices in accordance with embodiments of the invention can be used to combine the performance, efficiency, and reliability of wafer-based LED devices with the high yield, low cost, mixed materials of thin film electronics, for both lighting and display applications.
Exemplary micro LED devices which may be utilized with some embodiments of the invention are described in U.S. Patent No. 8,426,227, U.S. Publication No. 2013/0126081, U.S. Patent Application No. 13/458,932, U.S. Patent Application No. 13/711,554, and U.S. Patent
Application No. 13/749,647 all of which are incorporated herein by reference. The micro LED devices are highly efficient at light emission and consume very little power (e.g., 250 mW for a 10 inch diagonal display) compared to 5-10 watts for a 10 inch diagonal LCD or OLED display, enabling reduction of power consumption of an exemplary display panel incorporating the micro LED devices and wavelength conversion layers.
[0052] In one aspect, embodiments of the invention provide for configurations that allow phosphor particles of different emission spectra to be separated from one another while still providing good color mixing of the light as perceived by the viewer. Separating the phosphor particles from each other in each subpixel can prevent secondary absorption of light emitted from a phosphor particle emitting a different spectrum (e.g. absorption of green light emitted from a green emitting phosphor particle by a red emitting phosphor particle). This may increase efficiency and reduce unintended color shift. In the micro LED device systems in accordance with embodiments of the invention the spatial color separation between different color emitting areas (e.g. subpixels) can be small enough (e.g. approximately 100 μιη or less) that it will not be perceived by the human eye. In this manner, the "micro" LED device scale enables the arrangement of micro LED devices, light distribution layers, and wavelength conversion layers including phosphor particles with small enough pitch (e.g. approximately 100 μιη or less) between adjacent micro LED devices or subpixels that the spatial color separation is not perceived by the human eye. In such a configuration, spatially non-uniform color of the light source often associated with non-micro LED device systems can be avoided.
[0053] In another aspect, embodiments of the invention describe a light distribution layer formed over one or more micro LED devices that allows the light emitted from a micro LED device to spread out prior to entering the wavelength conversion layer, and also decrease the optical intensity of light entering the wavelength conversion layer (and color filter). The spread out light may result in more even emission from the wavelength conversion layer to be formed over the transparent light distribution layer. Consequently reduction of the optical density may reduce thermal degradation of the phosphor particles in wavelength conversion layer, prolonging lifetime of the light emitting device. This may also increase the chances of color conversion by the phosphor particles in the wavelength conversion layer without having to increase the volume loading of the phosphor particles in the wavelength conversion layer. Spreading out of the light and reduction of the optical intensity may also reduce the amount of back reflection and emission from the wavelength conversion layer that is absorbed by a micro LED device. In accordance with embodiments of the invention, inclusion of the light distribution layer may increase total light emission, increase emission uniformity, and increase sharpness of the color spectrum for the display.
[0054] In another aspect, embodiments of the invention describe light pipe configurations that can increase the fill factor for micro LED devices, pixels, or subpixels including micro LED devices. Wafer-based LED devices can be characterized as point sources, where light emission occupies a small area and has a concentrated output. If wafer-based LED devices are secured far enough apart that they can be perceived by the human eye (e.g. approximately 100 μιη or more) it may be possible that the light emitted from the individual LED devices is perceived as small dots. The light pipe configurations described in accordance with embodiments of the invention can be used to increase the fill factor for micro LED devices, pixels, or subpixels including micro LED devices, so that the individual micro LED devices are not distinguishable by the human eye, and small dots are not perceived.
[0055] In another aspect, embodiments of the invention describe a redundancy scheme in which a plurality of bonding sites are available for bonding a plurality of micro LED devices within each subpixel, for example, within each bank opening for a subpixel. In an embodiment, the redundancy scheme includes bonding layers (e.g. indium posts) at a pair of bonding sites (or more) within a bank opening, with each bonding layer designed to receive a separate micro LED device. In an embodiment, the redundancy scheme can also include a repair bonding site within the bank opening that is large enough to receive a micro LED device. The repair bonding site may also optionally include a bonding layer. In this manner, in an embodiment, each bank opening may correspond to a single emission color of a subpixel, and receives a plurality of micro LED devices of the emission color. If one of the micro LED devices of a pair of micro LED devices mounted within a subpixel is defective, then the other micro LED device compensates for the defective micro LED device. In addition, the repair bonding site may be used to bond an additional micro LED device if desired. In one embodiment, a redundancy and repair configuration is integrated into a backplane structure which can improve emission uniformity across the display panel without having to alter the underlying thin film transistor (TFT) architecture already incorporated in conventional active matrix organic light emitting diode (AMOLED) displays. Thus, embodiments of the invention may be compatible with conventional TFT backplane technology of AMOLED displays where the micro LED devices replace the organic emission layers of AMOLED display technology. [0056] In various embodiments, description is made with reference to figures. However, certain embodiments may be practiced without one or more of these specific details, or in combination with other known methods and configurations. In the following description, numerous specific details are set forth, such as specific configurations, dimensions and processes, etc., in order to provide a thorough understanding of the present invention. In other instances, well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present invention. Reference throughout this specification to "one embodiment" means that a particular feature, structure, configuration, or characteristic described in connection with the embodiment is included in at least one embodiment of the invention. Thus, the appearances of the phrase "in one embodiment" in various places throughout this specification are not necessarily referring to the same embodiment of the invention. Furthermore, the particular features, structures, configurations, or
characteristics may be combined in any suitable manner in one or more embodiments.
[0057] The terms "spanning", "over", "to", "between" and "on" as used herein may refer to a relative position of one layer with respect to other layers. One layer "spanning", "over", or "on" another layer or bonded "to" another layer may be directly in contact with the other layer or may have one or more intervening layers. One layer "between" layers may be directly in contact with the layers or may have one or more intervening layers.
[0058] Referring now to FIGS. 1A-1D schematic top and side-view illustrations are provided of an active matrix display panel in accordance with an embodiment of the invention. In such an embodiment, the underlying TFT substrate 102 can be similar to those in a typical AMOLED backplane including working circuitry (e.g. Tl, T2). Referring to FIG. 1A, panel 100 may generally include a pixel area 104 including pixels 106 and subpixels 108 arranged in a matrix, and working circuitry connected to each subpixel for driving and switching the subpixels. The non-pixel area generally includes a data driver circuit 109 connected to a data line of each subpixel to enable data signals (Vdata) to be transmitted to the subpixels, a scan driver circuit 112 connected to scan lines of the subpixels to enable scan signals (Vscan) to be transmitted to the subpixels, a power supply line 114 to transmit a power signal (Vdd) to the TFTs, and a ground ring 116 to transmit a ground signal (Vss) to the array of subpixels. As shown, the data driver circuit, scan driver circuit, power supply line, and ground ring are all connected to a flexible circuit board (FCB) 113 which includes a power source for supplying power to the power supply line 114 and a power source ground line electrically connected to the ground ring 116. In accordance with embodiments of the invention, each of the subpixels 108 may be individually addressed with the corresponding underlying TFT circuitry while a uniform ground signal is supplied to the top of the pixel area 104.
[0059] Referring now to FIGS. IB- ID, openings 131 may be formed in the planarization layer 122 to contact the working circuitry. Exemplary planarization materials include
benzocyclobutene (BCB) and acrylic. The working circuitry can include traditional 2T1C (two transistors, one capacitor) circuits including a switching transistor, a driving transistor, and a storage capacitor. It is to be appreciated that the 2T1C circuitry is meant to be exemplary, and that other types of circuitry or modifications of the traditional 2T1C circuitry are contemplated in accordance with embodiments of the invention. For example, more complicated circuits can be used to compensate for process variations of the driver transistor and the micro LED devices, or for their instabilities. Furthermore, while embodiments of the invention are described and illustrated with regard to top gate transistor structures in the TFT substrate 102, embodiments of the invention also contemplate the use of bottom gate transistor structures. Likewise, while embodiments of the invention are described and illustrated with regard to a top emission structure, embodiments of the invention also contemplate the use of bottom, or both top and bottom emission structures. In addition, embodiments of the invention are described and illustrated below specifically with regard to a high side drive configuration including ground tie lines and ground ring. In a high side drive configuration a LED may be on the drain side of a PMOS driver transistor or a source side of an NMOS driver transistor so that the circuit is pushing current through the p-terminal of the LED. Embodiments of the invention are not so limited may also be practiced with a low side drive configuration in which case the ground tie lines and ground ring become the power line in the panel and current is pulled through the n- terminal of the LED.
[0060] A patterned bank layer 126 including bank openings 128 is formed over the planarization layer 122. Bank layer 126 may be formed by a variety of techniques such as ink jet printing, screen printing, lamination, spin coating, CVD, and PVD. Bank layer 126 may be may be opaque, transparent, or semi-transparent to the visible wavelength. Bank layer 126 may be formed of a variety of insulating materials such as, but not limited to, photo-definable acrylic, photoresist, silicon oxide (Si02), silicon nitride (SiNx), poly(methyl methacrylate) (PMMA), benzocyclobutene (BCB), polyimide, acrylate, epoxy, and polyester. In an embodiment, bank player is formed of an opaque material such as a black matrix material. Exemplary insulating black matrix materials include organic resins, glass pastes, and resins or pastes including a black pigment, metallic particles such as nickel, aluminum, molybdenum, and alloys thereof, metal oxide particles (e.g. chromium oxide), or metal nitride particles (e.g. chromium nitride). [0061] In accordance with embodiments of the invention, the thickness of the bank layer 126 and width of the bank openings 128 described with regard to the following figures may depend upon the height of the micro LED devices to be mounted within the opening, height of the transfer heads transferring the micro LED devices, and resolution of the display panel. In an embodiment, the resolution, pixel density, and subpixel density of the display panel may account for the width of the bank openings 128. For an exemplary 55 inch television with a 40 PPI (pixels per inch) and 211 μιη subpixel pitch, the width of the bank openings 128 may be anywhere from a few microns to 206 μιη to account for an exemplary 5 μιη wide surrounding bank structure between bank openings 128. For an exemplary display panel with 440 PPI and a 19 μιη subpixel pitch, the width of the bank openings 128 may be anywhere from a few microns to 14 μιη to account for an exemplary 5 μιη wide surrounding bank structure. Width of the bank structure (i.e.
between bank openings 128) may be any suitable size, so long as the structure supports the required processes and is scalable to the required PPI.
[0062] Table 1 provides a list of exemplary implementations in accordance with embodiments of the invention for various red-green-blue (RGB) displays with 1920 x 1080p and 2560x1600 resolutions. In the exemplary embodiments, the 40 PPI pixel density may correspond to a 55 inch 1920 x 1080p resolution television, and the 326 and 440 PPI pixel density may correspond to a handheld device with RETINA (RTM) display. It is to be appreciated that embodiments of the invention are not limited to RGB color schemes or the 1920 x 1080p or 2560x1600 resolutions, and that the specific resolution and RGB color scheme is for illustrational purposes only.
Table 1.
Figure imgf000014_0001
[0063] In accordance with embodiments of the invention, the thickness of the bank layer 126 is not too thick in order for the bank structure to function. Thickness may be determined by the micro LED device height and a predetermined viewing angle. For example, where sidewalls of the bank openings 128 make an angle with the planarization layer 122, shallower angles may correlate to a wider viewing angle of the system. In an embodiment, exemplary thicknesses of the bank layer 126 may be between 1 μιη - 50 μιη. In an embodiment the thickness of the bank layer 126 is within 5 μιη of the thickness of the micro LED devices 400.
[0064] A patterned conductive layer is then formed over the patterned bank layer 126. In one embodiment the patterned conductive layer includes reflective bank layer 142 formed within the bank openings 128 and in electrical contact with the working circuitry. For example, a reflective bank layer 142 can be formed for each subpixel, wherein each reflective bank layer functions as a bottom electrode and is independently addressable from working circuitry within the substrate. Accordingly, all micro LED devices that are bonded to one reflective bank layer of a subpixel are addressed together. The patterned conductive layer may also optionally include the ground tie lines 144 and/or the ground ring 116. As used herein the term ground "ring" does not require a circular pattern, or a pattern that completely surrounds an object. In addition, while the following embodiments are described and illustrated with regard to a ground line in the form of a ground ring 116 at least partially surrounding the pixel area on three sides, it is to be appreciated that embodiments of the invention can also be practiced with a ground line running along one side (e.g. left, right, bottom, top), or two sides (a combination of two of the left, right, bottom, top) of the pixel area. Accordingly, it is to be appreciated that in the following description the reference to and illustration of a ground ring, could potentially be replaced with a ground line where system requirements permit.
[0065] The patterned conductive layer may be formed of a number of conductive and reflective materials, and may include more than one layer. In an embodiment, a patterned conductive layer comprises a metallic film such as aluminum, molybdenum, titanium, titanium-tungsten, silver, or gold, or alloys thereof. In application, the patterned conductive layer may include a stack of layers or metallic films. The patterned conductive layer may include a conductive material such as amorphous silicon, transparent conductive oxides (TCO) such as indium- tin- oxide (ITO) and indium- zinc-oxide (IZO), carbon nanotube film, or a transparent conducting polymer such as poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline, polyacetylene, polypyrrole, and polythiophene. In an embodiment, the patterned conductive layer includes a stack of a conductive material and a reflective conductive material. In an embodiment, the patterned conductive layer includes a 3-layer stack including top and bottom layers and a reflective middle layer wherein one or both of the top and bottom layers are transparent. In an embodiment, the patterned conductive layer includes a conductive oxide-reflective metal-conductive oxide 3-layer stack. The conductive oxide layers may be transparent. For example, the patterned conductive layer may include an ΠΌ-silver-ITO layer stack. In such a configuration, the top and bottom ITO layers may prevent diffusion and/or oxidation of the reflective metal (silver) layer. In an embodiment, the patterned conductive layer includes a Ti-Al-Ti stack, or a Mo-Al-Mo-ITO stack. In an embodiment, the patterned conductive layer includes an ΠΟ-Τί-ΑΙ-Τί-ΠΌ stack. In an embodiment, the patterned conductive layer is 1 μιη or less in thickness. The patterned conductive layer may be deposited using a suitable technique such as, but not limited to, PVD.
[0066] Following the formation of reflective bank layers 142, ground tie lines 144, and ground ring 116, an insulator layer 146 may then optionally be formed over the TFT substrate 102 covering the sidewalls of the pattered conductive layer. The insulator layer 146 may at least partially cover the bank layer 126 and the reflective bank layer 142, ground tie lines 144, and/or ground ring 116. In the embodiment illustrated the insulator layer 146 completely covers the ground ring 116, however, this is optional.
[0067] In an embodiment, the insulator layer 146 is formed by blanket deposition using a suitable technique such as lamination, spin coating, CVD, and PVD, and then patterned using a suitable technique such as lithography to form openings exposing the reflective bank layers 142 and openings 149 exposing the ground tie lines 149. In an embodiment, ink jet printing or screen printing may be used to form the insulator layer 146 and openings in the insulator layer without requiring lithography. Insulator layer 146 may be formed of a variety of materials such as, but not limited to, Si02, SiNx, PMMA, BCB, polyimide, acrylate, epoxy, and polyester. For example, the insulator layer 146 may be 0.5 μιη thick. The insulator layer 146 may be transparent or semi-transparent where formed over the sidewalls of the reflective bank layers 142 within the bank openings 128 as to not significantly degrade light emission extraction of the completed system. Thickness of the insulator layer 146 may also be controlled to increase light extraction efficiency, and also to not interfere with the array of transfer heads during transfer of the array of light emitting devices to the reflective bank structure. As will become more apparent in the following description, the patterned insulator layer 146 is optional, and represents one manner for electrically separating conductive layers.
[0068] In the embodiment illustrated in FIG. 1B-1C, the reflective bank layers 142, ground tie lines 144, and ground ring 116 can be formed of the same conductive layer. In another embodiment, the ground tie lines 144 and/or ground ring 116 can be formed of a conductive material different from the reflective bank layer 142. For example, ground tie lines 14 and ground ring 116 may be formed with a material having a higher conductivity than the reflective bank layer 142. In another embodiment, ground tie lines 14 and/or ground ring 116 can also be formed within different layers from the reflective bank layers. The ground tie lines 144 and ground ring 116 can also be formed within or below the patterned bank layer 126. For example, openings may be formed through the patterned bank layer 126 when forming the ground tie lines 144 and ground ring 116. Openings may also be formed through the patterned bank layer 126 and planarization layer 122 to contact the ground tie lines 144. In an embodiment, the ground ring and ground tie lines 144 may have been formed during formation of the working circuitry of the TFT substrate 102. Accordingly, it is to be appreciated that a number of possibilities exist for forming the ground tie lines 144 and ground ring 116.
[0069] Referring to the embodiment illustrated in FIG. IB, a plurality of bonding layers 140 may be formed on the reflective bank layer 142 to facilitate bonding of micro LED devices. In the specific embodiment illustrated two bonding layers 140 are illustrated for bonding a pair of micro LED devices. In an embodiment, the bonding layer 140 is selected for its ability to be inter-diffused with a bonding layer on the micro LED device (yet to be placed) through bonding mechanisms such as eutectic alloy bonding, transient liquid phase bonding, or solid state diffusion bonding as described in U.S. Patent Application No. 13/749,647. In an embodiment, the bonding layer 140 has a melting temperature of 250 °C or lower. For example, the bonding layer 140 may include a solder material such as tin (232 °C) or indium (156.7 °C), or alloys thereof. Bonding layer 140 may also be in the shape of a post, having a height greater than width. In accordance with some embodiments of the invention, taller bonding layers 140 may provide an additional degree of freedom for system component leveling, such as planarity of the array of micro LED devices with the TFT substrate during the micro LED device transfer operation and for variations in height of the micro LED devices, due to the change in height of the liquefied bonding layers as they spread out over the surface during bonding, such as during eutectic alloy bonding and transient liquid phase bonding. The width of the bonding layers 140 may be less than a width of a bottom surface of the micro LED devices to prevent wicking of the bonding layers 140 around the sidewalls of the micro LED devices and shorting the quantum well structures.
[0070] FIG. 1C is a schematic side-view illustration of the active matrix display panel of FIG. 1A taken along lines X-X and Y-Y after the transfer of a pair of micro LED devices 400 in accordance with an embodiment of the invention. The micro LED devices 400 can be transferred and bonded to the substrate 102 as part of an array of micro LED devices 400 using a variety of techniques including a transfer bonding process, transfer using elastomeric stamps, or transfer and bonding using an electrostatic transfer head array, as described in any of U.S. Patent No. 8,333,860, U.S. Patent No 8,349,116, U.S. Patent No. 8,415,771, U.S. Patent No. 8,415,767, or U.S. Patent No. 8,415,768. In the following embodiments, description is made with regard to a specific vertical micro LED device 400 structures. It is to be appreciated, that the specific micro LED devices 400 illustrated is exemplary and that embodiments of the invention are not limited. For example, embodiments of the invention may also be practiced with LED devices that are not vertical LED devices. In the particular embodiment illustrated, the micro LED devices 400 include a micro p-n diode between a bottom contact 404 and top contact 402. In an embodiment, the micro p-n diode is several microns thick, such as 30 μιη or less, or even 5 μιη or less, with the top and bottom contacts 404, 402 being 0.1 μιη - 2 μιη thick. The micro p-n diode may include a n-doped layer 409, a p-doped layer 405, and one or more quantum well layers 416 between the n-doped layer and p-doped layer. In the particular embodiment illustrated in FIG. 1C the n-doped layer 409 is illustrated as being above the p-doped layer 405. Alternatively, the p-doped layer 405 may be above the n-doped layer 409. The micro LED devices 400 may have straight or tapered sidewalls 406 (from top to bottom). The top and bottom contacts 402, 404 may include one or more layers and can be formed of a variety of electrically conducting materials including metals, conductive oxides, and conductive polymers. The top and bottom contacts 402, 404 may be transparent or semi-transparent to the visible wavelength spectrum (e.g. 380 nm - 750 nm) or opaque. The top and bottom contacts 402, 404 may optionally include a reflective layer, such as a silver layer. In an embodiment, a conformal dielectric barrier layer 407 may optionally be formed along the sidewalls 406 of the p-n diode to electrically passivate the quantum well 416, and optionally along the top or bottom surface of the micro p-n diode. The conformal dielectric barrier layer 407 may be thinner than the p-n diode so that it forms an outline of the topography of the p-n diode it is formed on. For example, the conformal dielectric barrier layer 407 may be approximately 50-600 angstroms thick aluminum oxide. A bonding layer 414 may be positioned between the micro LED device 400 and the reflective bank layer 142 to facilitate bonding of the bottom contact 404 of micro LED device 400 to the reflective bank layer 142, or other intervening layer. In an embodiment, bonding layer 414 includes a material such as indium, gold, silver, molybdenum, tin, aluminum, silicon, or an alloy or alloys thereof. Bonding layer 414 may be an alloy or intermetallic compound of a micro device bonding layer and a bonding layer 140.
[0071] In addition to bonding layers 140, the embodiments illustrated in FIGS. 1A-1C include a repair bonding site 401 within each bank opening 128 that is large enough to receive a micro LED device. In this manner, the plurality of bonding layers 140 and repair bonding site 401 create a redundancy and repair configuration within each bank opening 128. In the particular embodiments illustrated in FIGS. 1A-1C the repair bonding site 401 is illustrated as being a bare surface on the reflective bank layer 142. However, embodiments of the invention are not limited to such. In other embodiments, the repair bonding site 401 may also include a bonding layer 140 similarly as the other two bonding layers 140 described and illustrated for the preexisting redundancy scheme. Accordingly, in some embodiments, bonding layers 140 are provided on the reflective bank layer 142 at the sites of all of the intended micro LED devices in the redundancy scheme, as well as at the repair site 401.
[0072] In the embodiments illustrated an arrangement of ground tie lines 144 may run between bank openings 128 in the pixel area 104 of the display panel 100. In addition, a plurality of openings 149 expose the plurality of ground tie lines 144. The number of openings 149 may or may not have a 1: 1 correlation to the number of columns (top to bottom) of bank openings 128. For example, in the embodiment illustrated in FIG. 1A, a ground tie opening 149 is formed for each column of bank openings 128, however, this is not required and the number of ground tie openings 149 may be more or less than the number of columns of bank openings 128. Likewise, the number of ground tie lines 144 may or may not have a 1: 1 correlation to the number of rows (left to right) of bank openings. For example, in the embodiment illustrated a ground tie line 144 is formed for every two rows of bank openings 128, however, this is not required and the number of ground tie lines 144 may have a 1: 1 correlation, or any l:n correlation to the number (n) of rows of bank openings 128.
[0073] While the above embodiments have been described an illustrated with ground tie lines 144 running left and right horizontally across the display panel 100, embodiments are not so limited. In other embodiments, the ground tie lines can run vertically, or both horizontally and vertically to form a grid. A number of possible variations are envisioned in accordance with embodiments of the invention. In accordance with embodiments of the invention, ground tie lines are formed between the bank openings 128 in the pixel area and are electrically connected to the ground ring 116 or ground line in the non-display area. In this manner, the ground signal may be more uniformly applied to the matrix of subpixels, resulting in more uniform brightness across the display panel 100. In addition, by forming the ground tie lines 144 from a material having better electrical conductivity than the top electrode layer (which is yet to be formed), this may reduce the contact resistance in the electrical ground path.
[0074] It is to be appreciated, that the specific arrangement of vertical micro LED devices 400 with ground tie lines 144 illustrated in FIGS. 1A-C is exemplary and that embodiments of the invention may also be practiced with other micro LED devices. For example, FIG. ID illustrates alternative micro LED devices 400 transferred and bonded to display substrate 102 similarly as described above with regard to FIG. 1C. Similar to the micro LED devices of FIG. 1C, the micro LED devices in FIG ID includes a micro p-n diode including doped layers 405, 409 opposite one or more quantum well layers 416. Unlike the micro LED devices of FIG. 1C, the micro LED devices in FIG. ID includes bottom contacts to both the doped layers 405, 409. For example, bottom contact 404 is formed on doped layer 405, and bottom contact 403 is are formed on doped layer 409. A conformal dielectric barrier layer 407 may also be optionally formed on the micro LED devices of FIG. ID, particularly to protect sidewalls 406 including the quantum well layer(s) 416. Since the micro LED devices 400 of FIG. ID includes bottom contacts for both the n-doped and p-doped layers, the reflective layer 142 may also be separated into two electrically separate layers to make electrical contact with bottom contacts 404, 403, respectively. Accordingly, the micro LED device of FIG. ID may be implemented within embodiments of the invention where it is not required to have top and bottom contacts, and the micro LED devices can be operably connected with bottom contacts.
[0075] Referring now to FIGS. 2A-2D isometric view illustrations are provided for arrangements of micro LED devices mounted within a reflective bank layer of a subpixel 108 in accordance with embodiments of the invention. FIG. 2A illustrates a reflective bank layer 142 formed along the sidewalls and bottom surface of the bank openings 128 as previously described above, and partially along the top surface of the patterned bank layer 126 adjacent the bank openings 128. In the embodiment illustrated in FIG. 2A, a pair of micro LED devices 400 are mounted within the reflective bank layer 142 such that they are evenly spaced from opposite sidewalls along the length of the bank opening. Accordingly, FIG. 2A is illustrative of an exemplary micro LED device redundancy scheme. In the embodiment illustrated in FIG. 2B, a pair of micro LED devices 400 are mounted within the reflective bank layer 142 so that there is room for an additional micro LED device at a repair bonding site 401. Accordingly, FIG. 2B is illustrative of an exemplary micro LED device redundancy scheme with repair site.
[0076] In practical application, it is not expected to always achieve 100% transfer success of the micro LED devices 400 from a carrier substrate to the display substrate 102, and with no defective, missing, or contaminated micro LED devices. In accordance with embodiments of the invention, micro LED devices may be of 1 to 100 μιη in scale, for example, having a maximum width of approximately 20 μιη, 10 μιη, or 5μιη. Such micro LED devices are fabricated so that they are poised for pick up from a carrier substrate and transfer to the display substrate, for example, using an array of electrostatic transfer heads. Defective micro LED devices may result from a variety of reasons, such as contamination, stress fractures, and shorting between conductive layers. Micro LED devices also may not be picked up during the transfer operation due to a variety of reasons, such as non-planarity of the carrier substrate, contamination (e.g. particulates), or irregular adhesion of the micro LED devices to the carrier substrate. After the micro LED device 400 transfer operations are completed, testing can be performed to detect defective, missing, or contaminated micro LED devices and determine if any repair operations need to be performed.
[0077] FIGS. 2C-2D illustrate exemplary applications of placing an additional micro LED device at the repair site after a defective, missing, or contaminated micro LED device is detected. For example, following the transfer and bonding of micro LED devices 400 shown in FIG. 2B the micro LED devices transferred to the display substrate can be inspected. If it is found that a micro LED device 400X is defective or contaminated, a repair micro LED device 400 can then be bonded at the repair site 401 as illustrated in FIG. 2C. Alternatively, it is found that a micro LED device was not transferred to an intended bonding site, a repair micro LED device 400 can then be bonded at the repair site 401 as illustrated in FIG. 2D.
[0078] Referring now to FIGS. 3A-3C isometric view illustrations are shown of arrangements of micro LED devices mounted within a reflective bank layer of a subpixel with separate wavelength conversion layers formed over individual micro LED devices in accordance with embodiments of the invention. As shown in FIG. 3 A a separate wavelength conversion layer 310 is formed over each of the individual micro LED devices 400 of a pair of micro LED devices. As shown in FIG. 3B a repair micro LED device 400 has been transferred to the reflective bank layer 142 and a separate wavelength conversion layer 310 is formed over each of the individual micro LED devices 400 of a pair of micro LED devices. In this configuration, a wavelength conversion layer 310 has not been formed over a defective or contaminated micro LED device 400X. FIG. 3C is similar to that of FIG. 3B, except that a wavelength conversion layer is not formed over the bonding layer 140 corresponding to a missing micro LED device.
[0079] FIGS. 4A-4C show isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single wavelength conversion layer formed over the micro LED devices in accordance with embodiments of the invention. The arrangement of the micro LED devices in FIGS. 4A-4C is the same as the exemplary
arrangements shown in FIGS 3A-3C, with the difference being that a single wavelength conversion layer 310 is formed over all of the micro LED devices 400 within the subpixel, or within reflective bank layer 142. As shown in FIGS. 4B-4C, the wavelength conversion layer 130 may also be formed over a defective or contaminated micro LED device 400X, or a bonding layer 140 corresponding to a missing micro LED device.
[0080] In the embodiments illustrated in FIGS. 4A-4C, the wavelength conversion layer 130 is illustrated as being within the reflective bank layer 142 within the subpixel, however, in other embodiments the wavelength conversion layer 130 is formed over the entire reflective bank layer 142 as illustrated in FIG. 5. In other embodiments, the wavelength conversion layer 130 is formed over at least the bottom surface and sidewalls of the reflective bank layer 142. A black or white matrix material can be formed over portions of the reflective bank layer 142 formed on top of the patterned bank layer 126. In this manner all light emitted from the micro LED devices within the reflective bank layer 142 that is visible by the viewer passes through the wavelength conversion layer. In addition, such a configuration requires reflected light from other sources, such as outside of the display, to pass through the wavelength conversion layer 310. It is to be appreciated, that while FIG. 5 illustrates the micro LED device 400 pair configuration of FIG. 2B, that the wavelength conversion layer 310 of FIG. 5 can be formed over any micro LED device configuration mounted within the reflective bank layer 142, including, for example, those previously illustrated in FIG. 2A, FIG. 2C, and FIG. 2D.
[0081] Thus far the wavelength conversion layer 130 in FIG. 3 A- FIG. 5 have been illustrated as being in a dome shaped configuration, which can be formed from the wavelength conversion layer 130, and optionally additional layers. For example, a light distribution layer can be formed underneath the wavelength conversion layer as will be described in further detail in the following description. The dome shape profile may be hemispherical, flattened, or narrowed. For example, a hemispherical profile may improve light extraction and create a Lambertian emission pattern. Flattening or narrowing of the dome profile can be used to adjust viewing angle for the light emitting device. In accordance with embodiments of the invention, the thickness and profile the layers can be adjusted in order to change the light emission beam profile from the micro LED devices, as well as color over angle characteristics of the display which can be related to edge effects.
[0082] Referring now to FIGS. 6A-8B, a variety of configurations are illustrated including an elongated dome shaped wavelength conversion layer, which can be formed from the wavelength conversion layer 130, and optionally additional layers. For example, a light distribution layer can be formed underneath the wavelength conversion layer as will be described in further detail in the following description. In this manner, the light distribution layer can function as a light pipe to increase the fill factor for the micro LED devices within the reflective bank layers. [0083] FIGS. 6A-6C show isometric view illustrations of an arrangement of micro LED devices mounted within a reflective bank layer of a subpixel with a single elongated wavelength conversion layer formed over the micro LED devices in accordance with embodiments of the invention. The arrangement of the micro LED devices in FIGS. 6A-6C is the same as the exemplary arrangements shown in FIGS 3A-3C, with the difference being that a single elongated wavelength conversion layer 310 is formed over all of the micro LED devices 400 within the subpixel, or within reflective bank layer 142. As shown in FIGS. 6B-6C, the elongated wavelength conversion layer 130 may also be formed over a defective or contaminated micro LED device 400X, or a bonding layer 140 corresponding to a missing micro LED device.
[0084] In the embodiments illustrated in FIGS. 6A-6C, the wavelength conversion layer 130 is illustrated as being only on the bottom surface of the reflective bank layer 142 within the subpixel. FIG. 7 A illustrates an embodiment in which the wavelength conversion layer 130 is formed over at least the bottom surface and sidewalls of the reflective bank layer 142. FIG. 7B illustrates an embodiment in which the wavelength conversion layer 130 is formed over the entire reflective bank layer 142. In this manner all light emitted from the micro LED devices within the reflective bank layer 142 that is visible by the viewer passes through the wavelength conversion layer. The configuration illustrated in FIG. 7B requires light that is reflected by the reflective bank layer 142 originating from sources other than the micro LED device, such as outside of the display, to pass through the wavelength conversion layer 310. In the
configurations illustrated in FIGS. 6A-6C and FIG. 7 A a black or white matrix material can be formed over portions of the reflective bank layer 142 formed on top of the patterned bank layer 126. It is to be appreciated, that while FIGS. 7A-7B illustrate the micro LED device 400 pair configuration of FIG. 2B, that the wavelength conversion layer 310 of FIGS. 7A-7B can be formed over any micro LED device configuration mounted within the reflective bank layer 142, including, for example, those previously illustrated in FIG. 2A, FIG. 2C, and FIG. 2D.
[0085] Up until this point, configurations have been illustrated in which a wavelength conversion layer is formed over a single reflective bank layer 142. In the embodiments illustrated in FIGS. 8A-8B a wavelength conversion layer is illustrated as being formed over or spanning multiple reflective bank layers 142. For example, each reflective bank layer 142 can correspond to a subpixel within a pixel. FIG. 8A is an isometric view illustration of a pixel including an elongated dome shaped wavelength conversion layer 310 formed over multiple reflective bank layers 142 corresponding to multiple subpixels in accordance with an embodiment of the invention. As illustrated, the wavelength conversion layer 310 may be formed over all of the reflective bank layers 142 within a pixel. FIG. 8B is an isometric view illustration of a pixel including both an elongated dome shaped wavelength conversion layer 310 formed over multiple reflective bank layers 142 corresponding to multiple subpixels and an elongated dome shaped wavelength conversion layer 310 formed over a single reflective bank layer 142 corresponding to a single subpixel in accordance with an embodiment of the invention.
[0086] Up until this point the wavelength conversion layers 310 have been illustrated as single layer systems. In some embodiments, a number of additional layers can be formed under or over the wavelength conversion layers. For example, the wavelength conversion layers may be included in a micro lens configuration that may be shaped to change the light emission beam profile from the micro LED devices 400.
[0087] Referring now to FIG. 9A a combination view is provided of a light distribution layer in the form of a light pipe around a micro LED device and wavelength conversion layer over the light pipe in accordance with an embodiment of the invention. FIG. 9A is referred to as a combination view because it includes characteristics of an isometric view, plan view for location of the micro LED device, and cross-sectional view of the layers. In the following embodiments description is made with regard to a specific vertical micro LED device 400 structure. It is to be appreciated, that the specific micro LED device 400 illustrated is exemplary and that
embodiments of the invention are not limited. For example, embodiments of the invention may also be practiced with LED devices such as those described and illustrated with regard to FIG. ID. The following description is also made with regard to a light distribution layer 320 in the form of a light pipe. It is to be appreciated that such a configuration has been selected in order to adequately describe numerous possible arrangements of layers and shapes, and that the arrangements of layers can also be used to form any of the profiles previously described, such as dome shaped and elongated dome shaped, among others.
[0088] As shown in FIGS. 9 A a light distribution layer 320 is optionally formed around one or more micro LED devices 400 prior to forming the wavelength conversion layer 320. As described herein a layer "around" a micro LED device may be formed laterally to, over, or below the micro LED device. Thus, the term "around" a micro LED device does not require the layer to be located at all directions from the micro LED device. Rather, the term "around" is intended to refer to a neighboring area through which the light emission beam path from the micro LED device is designed to pass through. In the particular embodiment illustrated in FIG. 9A, the light pipe around the micro LED devices 400 is both lateral to and over the micro LED devices.
[0089] A light distribution layer 320 in the form of a light pipe may be shaped to both allow refraction of incident light from the micro LED devices 400 out of the light pipe and toward a wavelength conversion layer 310, and to cause internal reflection and lateral spreading of incident light from the micro LED devices 400 within the light distribution layer 320. The light distribution layer 320 may be thicker than the micro LED device 400. In an embodiment, the light distribution layer 320 is 1 μιη - 100 μιη thick. The lateral length/width of the light distribution layer may be greater than the thickness of the light distribution layer in order to support lateral spreading of the incident light. In an exemplary embodiment, considering a 100 μιη x 100 μιη wide subpixel, a light distribution layer 320 may have a lateral length of 100 μιη, a lateral width of 100 μιη and a height that is equal to or less than the maximum lateral length or width.
[0090] The light distribution layer 320 may also be dome shaped to create radial spreading of the light refracted out of the light pipe. The dome shape profile may be hemispherical. The dome shape may also be flattened or narrowed. In some embodiments, the light distribution layer 320 is elongated dome shaped. In an embodiment, the thickness and profile of the light distribution layer 320 provides a base structure upon which a micro lens structure is formed in order to change the light emission beam profile from the micro LED devices 400, as well as color over angle characteristics of the display which can be related to edge effects. Light distribution layer 320 may be formed of a variety of transparent materials such as epoxy, silicone, and acrylic, which have the following reported refractive indices (n) at nominal 590 nm wavelength: n= 1.51 - 1.57 (epoxy), n= 1.38 - 1.58 (silicone), n= 1.49 (acrylic). In an embodiment, light distribution layer 320 is formed by ink jet printing. In an embodiment, the light distribution layer 320 is formed by application of a molten glass. Glass compositions can range from a variety of compositions ranging from acrylic grass, crown glass, flint glass, and borosilicate glasses that possess indices of refraction that can be matched to those of a matrix material forming the wavelength conversion layer 310 such as epoxy, silicone, or acrylic. The particular profile of the light distribution layer 320 can be created through several processing techniques. One way is by tailoring surface tension on in ink printed materials. Lithography or other wafer-level optics techniques such as those used to form micro lenses may also be used. Physical techniques such as moulding or imprint lithography may also be used.
[0091] FIG. 9B is a cross-sectional side view illustration of a light distribution layer in the form of a light pipe around a micro LED device and a wavelength conversion layer over the light pipe in accordance with an embodiment of the invention. As shown in FIG. 9B, incident light emitting from the micro LED devices 400 can both be refracted out of the light distribution layer 320 and into the wavelength conversion layer 310, and also reflected internally within the light distribution layer 320 to cause lateral spreading of the incident light from the micro LED devices where the reflected light is eventually refracted out of the light distribution layer 320 and into the wavelength conversion layer 310. FIGS. 9C-9D are cross-sectional side view illustrations of a light distribution layer in the form of a light pipe and having a tapered profile in accordance with embodiments of the invention. In the particular embodiment illustrated in FIG. 9C, the light distribution layer 320 is tapered toward the lateral edges so that the light distribution layer is thinner at the edges than the middle. Tapering the thickness of the light distribution layer 320 can result in increase reflection, causing the light to eventually refract through the top surface of the light distribution layer rather than through the edges. In the embodiment illustrated in FIG. 9D, the pair of micro LED devices are placed nearer one edge of the light distribution layer 320, which is tapered from one side to the other. In this manner, the light distribution layer 320 can guide the light from one side of the light distribution layer to the other where the light is refracted through the top surface rather than through a side of the light distribution layer.
[0092] In addition to allowing refraction and reflection of incident light from the micro LED devices 400, light distribution layer 320 may also allow the light emitting from the micro LED devices 400 to spread out prior to entering the wavelength conversion layer 310, which decreases the optical intensity of light entering the wavelength conversion layer. In one aspect, the internally reflected light allows for an improved fill factor of the micro LED devices 400, pixel, or subpixel including the micro LED devices. In another aspect, the spread out light (including incident light not reflected, as well as reflected light) may result in more even emission from the wavelength conversion layer 310 to be formed over the light distribution layer. In another aspect, the light distribution layer 320 may function to increase the length that light travels in the device before being emitted. The can result in a reduction of the optical density and reduce thermal degradation of the phosphor particles in wavelength conversion layer, prolonging lifetime of the display device. This may also increase the chances of color conversion by the phosphor particles in the wavelength conversion layer without having to increase the volume loading of the phosphor particles in the wavelength conversion layer. In yet another aspect, spreading out of the light and reduction of the optical intensity may reduce the amount of back reflection from the wavelength conversion layer that could otherwise be reabsorbed by the micro LED devices 400. In accordance with embodiments of the invention, light distribution layer 320 may increase the fill factor, increase total light emission, increase emission uniformity, and increase sharpness of the color spectrum for the display device. The thickness and profile of the light distribution layer may also provide a base structure from which a micro lens structure is formed in order to change the light emission beam profile from the micro LED devices 400, as well as color over angle characteristics of the display which can be related to edge effects. [0093] Following the formation of the optional light distribution layer 320, a matching layer 222 may optionally be formed over the light distribution layer 320 prior to forming the wavelength conversion layer 310. The matching layer 322 may function to match the indices of refraction for the light distribution layer 320 and wavelength conversion layer 310 to reduce back reflection of light. For example, where layers 320, 310 are formed of, for example, an epoxy, silicone, acrylic, or glass having different indices of refraction, the matching layer 322 is formed of an epoxy, silicone, acrylic, or glass having an index of refraction between that of layers 320, 310. In accordance with embodiments of the invention, the polymer matrix forming layers 320, 310 is the same, and layers 320, 310 have an identical index of refraction. In another embodiment, the index of refraction for layers 320, 310 is within 0.3, or more particularly within 0.1. In an embodiment, matching layer is 2 μιη or less in thickness. In an embodiment, curing of the matching layer 322 may be thermal or UV.
[0094] In accordance with embodiments of the invention, a wavelength conversion layer 310 is formed over the micro LED devices 400 and over the optional light distribution layer 320 and matching layer, if present. In an embodiment, the wavelength conversion layer includes phosphor particles to control the light emission spectrum. In one embodiment, the wavelength conversion layer includes different phosphor particles (different in designed size or shape, or composition) for a blended color emission spectrum (e.g. a combination of any of red, blue, green, yellow, etc). In another embodiment, the wavelength conversion layer includes phosphor particles designed for a single color emission spectrum (e.g. red, blue, green, yellow, etc).
[0095] In an embodiment, the wavelength conversion layer 310 is formed of phosphor particles. For example, the wavelength conversion layer is formed of a spray deposition method followed by removal of solvents. In an embodiment, the wavelength conversion layer includes a dispersion of phosphor particles in a matrix material such as a polymer or glass matrix material. Other filler materials such as pigment, dye, or scattering particles may also be dispersed within the matrix or among the phosphor particles themselves if no matrix material is present. In an embodiment, wavelength conversion layer 310 is formed by ink jet printing, and UV cured. In an embodiment, the wavelength conversion layer 310 is formed by application of a molten glass, where the fillers are thermally and chemically stable within the molten glass. The thickness of the wavelength conversion layer 310, as well a concentration of fillers, e.g. phosphor particles, pigment, dye, or light scattering particles are tuned to achieve the requisite color spectrum. For example, in an embodiment the thickness and concentration is tuned to minimize color bleeding from the micro LED devices through the wavelength conversion layer, and maximize emission from the phosphor particles. Thickness of the wavelength conversion layer 310 (as well as light distribution layer) may also be partly determined by the spacing between micro LED devices. For example, micro LED devices may be spaced more closely together in high resolution display applications compared to lighting applications. In an embodiment, the wavelength conversion layer 310 is 5 μιη - 100 μιη thick, or more specifically 30 μιη - 50 μιη thick for an exemplary 5 μιη wide and 3.5 μιη tall micro LED device 400. In some embodiments, the thickness of the wavelength conversion layer and concentration of fillers may be designed to allow some light from the micro LED devices 400 to pass through resulting a mix of the micro LED device light spectrum and the converted light spectrum to achieve a blended emission spectrum, for example, white light. Concentration of the color converting materials (e.g. phosphor particles, pigment, dye) as well as thickness of the layers can depend upon the particular application of the light emitting device, for example, if full color conversion (e.g. from blue to red, or blue to green, etc.) is to occur, if leakage or bleeding of light from the underlying micro LED devices is to occur, or if a mixture of converting materials is employed. In an embodiment where full color conversion (e.g. from blue to red, or blue to green, etc.) occurs a volume loading percent of greater than 50% color converting materials may be included in the wavelength conversion layer. In an
embodiment, the wavelength conversion layer includes greater than 50% volume loading of phosphor particles. The light distribution layer 320 can function to increase the length that light travels in the device before being emitted in order to increase the chances of color conversion by the phosphor particles in the wavelength conversion layer 310 without having to increase the volume loading of the phosphor particles in the wavelength conversion layer.
[0096] In accordance with embodiments of the invention, the term "phosphor" may refer to any type of wavelength converting material that will absorb light at one wavelength and emit light at another wavelength. One type of phosphor particle is a quantum dot. Quantum dots are semiconductor materials where the size of the structure is small enough (less than tens of nanometers) that the electrical and optical characteristics differ from the bulk properties due to quantum confinement effects. For example, the emission properties of quantum dots are related to their size and shape in addition to their composition. Fluorescence of quantum dots is a result of exciting a valence electron by absorbing a certain wavelength, followed by the emission of lower energy in the form of photons as the excited electrons return to the ground state. Quantum confinement causes the energy difference between the valence and conduction bands to change based on size and shape of the quantum dot meaning that the energy and wavelength of the emitted photons is determined by the size and shape of the quantum dot. The larger the quantum dot, the lower the energy of its fluorescence spectrum. Accordingly, smaller quantum dots emit bluer light (higher energy) and larger quantum dots emit redder light (lower energy). This allows size-dependent tuning of the semiconductor photoluminescence emission wavelength throughout the visible spectrum, with a sharp emission spectrum and high quantum efficiency.
[0097] Examples of quantum dot materials include, but are not limited to, groups II- VI, ΙΠ-V, IV-VI semiconductor materials. Some exemplary compound semiconductors include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaP, GaAs, GaSb, HgS, HgSe, HgTe, InAs, InP, InSb, AlAs, A1P, AlSb. Some exemplary alloyed semiconductors include InGaP, ZnSeTe, ZnCdS, ZnCdSe, and CdSeS. Multi-core structures are also possible. Exemplary multi core configurations may include a semiconductor core material, a thin metal layer to protect the core from oxidation and to aid lattice matching, and a shell to enhance the luminescence properties. The shell may function to absorb light at a specific spectrum that is different from the emission spectrum from the quantum dot. The core and shell layers may be formed of the same material, and may be formed of any of the exemplary compound semiconductors or alloyed semiconductors listed above. The metal layer often comprises Zn or Cd.
[0098] In accordance with embodiments of the invention, one type of phosphor particle is a particle that exhibits luminescence due to its composition. Some exemplary phosphor particles that exhibit luminescence due to their composition include sulfides, aluminates, oxides, silicates, nitrides, YAG (optionally doped with cerium), and terbium aluminum garnet (TAG) based materials. Other exemplary materials include yellow-green emitting phosphors:
(Ca,Sr,Ba)Al204:Eu (green), (Lu, Y)3Al5012:Ce3+(LuAG, YAG) (yellow- green),
Tb3Ai5012:Ce3+(TAG) (yellow- green); orange-red emitting phosphors:
BaMgAli0O17:Eu2+(Mn2+), Ca2Si5N8:Eu2+(orange-red), (Zn,Mg)S:Mn (green, red),
(Ca,Sr,Ba)S:Eu2+ (red); uv-deep blue absorbing phosphors for blue and yellow-green emission: (Mg,Ca,Sr,Ba)2Si04:Eu2+ (uv-blue excitation, yellow emission), (Mg,Ca,Sr,Ba) Si207:Eu2+ (uv- deep blue excitation, blue-green emission), CagMg(Si04)4Cl2:Eu2+ (uv-deep blue excitation, blue emission); and phosphors that can emit over the full visible spectrum depending on composition and processing (Sr,Ca,Ba)SixOyNz:Eu2+ (y>0 green, y=0 red), Y202S:Eu3+(blue-green),
(Ca,Mg,Y)vSiwAlxOyNz:Eu (yellow-green-red) . In some embodiments the particle size for such phosphor particles may be from 1 μιη to 20 μιη. In other embodiments, the particles size for such phosphor particles can be nanoparticles from 100 nm to 1 μιη. The phosphor particles can also include a blend of the 1 μιη to 20 μιη particles and 100 nm to 1 μιη nanoparticles.
Nanoparticles may be useful, for example, to reduce the amount of settling when dispersed within a matrix material of a wavelength conversion layer prior to curing or solvent removal, which may result in more even distribution of the nanoparticles and light emission of the light emitting device. [0099] Other materials may also be dispersed within the wavelength conversion layer. For example, the other materials may be dispersed within the matrix material, such as glass or polymer matrix of the wavelength conversion layer. In an embodiment, a light scattering agent such as a Ti02 or A1203 particles are dispersed within the wavelength conversion layer. Such light scattering agents may have the effect of increasing the phosphor particle efficiency by increasing scattered light within the wavelength conversion layer. Such light scattering agents may additionally have the effect of reduced bleeding of the micro LED device emitted light through the wavelength conversion layer. Light scattering particles can also be used to control when and where light is emitted from the micro lens structure. For example, a higher
concentration of light scattering particles can be placed at the ends of the micro lens structure, e.g. at lateral edges of the wavelength conversion layer, to direct the light out. In an
embodiment, a pigment or dye may be dispersed within the wavelength conversion layer 310. This may have the effect of incorporating a color filter into the wavelength conversion layer. In an embodiment, the pigment or dye may have a color similar to the emission wavelength of the phosphor particle. In this manner, the pigment or die can absorb wavelengths other than those being emitted from the phosphor particle, further sharpening the emission spectrum of the assembly. For example, in a particular embodiment, the micro LED device 400 is a gallium nitride (GaN) based material, and emits a blue (e.g. 450 nm - 495 nm) or deep blue (e.g. 420 nm - 450 nm) light. Quantum dots designed for red emission may be dispersed in the wavelength conversion layer 310 in order to absorb the blue or deep blue emission from the micro LED device 400 and convert the emission wavelength to red. In such an embodiment, a red pigment or dye may also be dispersed within the wavelength conversion layer 310 to also absorb colors other than red. In this manner, the red pigment or dye may absorb additional blue or deep blue light, thereby reducing bleeding of the unconverted blue or deep blue light. Exemplary pigments include lithol rubine (Red), B-copper thalocyanine (Blue), and diarylide yellow (Yellow). It is to be appreciated that a blue micro LED device and red phosphor particles with red pigment or dye is exemplary and a variety of emission spectrum configurations for the micro LED devices and wavelength conversion layers, where present, are possible.
[00100] In accordance with some embodiments of the invention, the polymer matrix forming the wavelength conversion layer 310 may be permeable to oxygen or moisture. In an embodiment, following the formation of the wavelength conversion layer 310, an oxygen barrier film 324 may optionally be formed in order to protect the wavelength conversion layer 310 from oxygen or moisture absorption. For example, where wavelength conversion layer 310 includes quantum dots, the oxygen barrier film 324 can act as a barrier to oxygen or moisture absorption by the quantum dots, thereby prolonging the lifetime of the quantum dots in the display device. Suitable materials for the oxygen barrier film 324 include, but are not limited to, AI2O3, S1O2, SiNx, and glass. The deposition method for oxygen barrier film 324 may be a low temperature method in order to not thermally degrade the quantum dots or other fillers. Exemplary conformal deposition methods include atomic layer deposition (ALD), sputtering, spin on, and lamination. The oxygen barrier film may also be blanket deposited over the entire substrate, or over all of the micro LED devices. In an embodiment, an A1203 oxygen barrier film is deposited by atomic layer deposition (ALD).
[00101] Referring now to FIGS. lOA-lOC, combination and cross-sectional side view illustrations are provided for embodiments including reflective layers 330 directly over the micro LED devices 400 where light distribution layer 320 is in the form of a light pipe. Reflective layers 330 can be provided in different locations, which may result in different effects on the light pipe and wavelength conversion layer configuration. In one embodiment illustrated in FIG. 10B the reflective layers 330 are formed over the wavelength conversion layer 310. In this manner, the reflective layer can block incident light emitted from the micro LED devices 400 from bleeding through the wavelength conversion layer 310 at the closest location to the micro LED devices, where optical intensity may be the greatest. Reflection of the incident light can also have the effect of laterally spreading the light thereby improving the fill factor. Another effect of the reflective layers 330 may also be to increase the number of passes of the incident light through the wavelength conversion layer. By way of example, situations are illustrated where the incident light passes through the wavelength conversion layer 310 three times and five times. With each pass, phosphor particles are excited and emit converted spectra. In this manner, the efficiency of the phosphor particles in the wavelength conversion layer 310 can be improved, thereby increasing the converted spectra light intensity of the system, while also improving the fill factor, and providing more even emission from the wavelength conversion layer 310.
[00102] In another embodiment illustrated in FIG. IOC reflective layers 330 are formed between the light distribution layer 320 and the wavelength conversion layer 310. In such a configuration, the reflective layer may influence lateral spreading of incident light, and improve the fill factor. Such a configuration may also block incident light from entering the wavelength conversion layer 310 at the closest location to the micro LED devices, where optical intensity may be the greatest. As such, bleeding of incident light through the wavelength conversion layer 310 can be reduced. This configuration may also increase the lifetime of the phosphor particles, particularly where optical intensity would have been the greatest. [00103] FIGS. 10D-10F illustrate embodiments similar to those illustrated and described with regard to FIGS. 1 OA- IOC. In the embodiments illustrated in FIGS. 10D-10F, a reflective layer 330 is formed over a micro LED device 400 pair including a repair micro LED device, and optionally not formed over a missing, defective, or contaminated micro LED device 400X.
Alternatively, a reflective layer can also be formed over a missing, defective, or contaminated micro LED device 400X.
[00104] The reflective layers 130 described above and illustrated in FIGS. 10A-10F are illustrated as being flat layers. However, it is not required that the reflective layers 330 are flat. Any configuration is possible, and the reflective layers 330 may be shaped to control the direction of light emission. Reflective layers 330 also are not required to be formed directly above the micro LED devices, and may be formed at other locations such as along the lateral edges of the light pipe or wavelength conversion layer.
[00105] In accordance with embodiments of the invention, the light emitting device configurations including the micro LED devices and wavelength conversion layers can be incorporated into a variety of display devices. Exemplary display applications include display signage, display panels, televisions, tablets, phones, laptops, computer monitors, kiosks, digital cameras, handheld game consoles, media displays, ebook displays, or large area signage display.
[00106] The wavelength conversion layers can be designed to all emit the same color emission spectrum, or the wavelength conversion layers can be divided into multiple groups of wavelength conversion layers, with each group designed to emit a different color emission spectrum. In this manner, the displays can emit any color or patterns of colors depending upon the arrangement and content of the micro LED devices and wavelength conversion layers. In one embodiment, white light can be generated by incorporating red (e.g. 620 nm - 750 nm) and green (e.g. 495 nm -570 nm) emitting phosphor particles in a wavelength conversion layer positioned over a blue emitting (e.g. 450 nm - 495 nm) micro LED device. In another embodiment, white light can be generated by incorporating multiple micro LED devices into a pixel, with each micro LED device designed to emit the same emission spectrum (e.g. visible spectrum or UV spectrum), and different wavelength conversion layers designed to convert color emission. In this manner, by including phosphor particles of a single color emission spectrum over each light distribution layer, secondary absorption of light emitted from different emission spectra of different phosphor particles is avoided. This may increase efficiency and reduce unintended color shift.
[00107] Referring now to FIG. 11 A, a combination view illustration is provided of a display including a plurality of micro LED devices 400 bonded to a display substrate 102, a plurality of light distribution layers 320 in the form of light pipes around the plurality of micro LED devices 400, and a plurality of wavelength conversion layers 310 over the plurality of light distribution layers 320. In the particular embodiment illustrated, a pixel 106 includes a plurality of micro LED devices 400 within light distribution layers 320 and wavelength conversion layers 310 designed to convert emission, e.g. in an RGB subpixel arrangement. In an embodiment, a black matrix material 202 can be formed over the substrate 102 and between the light pipes to absorb light and prevent color bleeding into adjacent pixels 106 or subpixels 108. Alternatively, the black matrix material 202 can be substituted with a white matrix material to reflect light and prevent color bleeding into adjacent pixels 106 or subpixels 108.
[00108] When arranged in a pixel configuration, each subpixel 108 may contain a single phosphor color emission, where present. Each subpixel may likewise contain a different phosphor color emission, where present. In this manner, secondary absorption of light emitted from a phosphor particle emitting a different spectrum (e.g. absorption of green light emitted from a green emitting phosphor particle by a red emitting phosphor particle) is avoided. This may increase efficiency and reduce unintended color shift. Such pixel and subpixel
configurations can be used for the final output of white light, or any other color of light.
[00109] For example, a pixel may contain 3 micro LED devices in 3 light pipes, or a pair of micro LED devices in each light pipe, with all the micro LED devices designed to emit blue light, with one red emitting wavelength conversion layer over one light pipe, one green emitting wavelength conversion layer over a second light pipe, and the third light pipe either not including a wavelength conversion layer over it or including a blue emitting wavelength conversion layer over it. In one embodiment, white light can be generated by incorporating multiple micro LED devices into a pixel, with each micro LED device designed to emit UV light, with one red emitting conversion layer over a first light pipe, one green emitting wavelength conversion layer over a second light pipe, and one blue emitting wavelength conversion layer over a third light pipe. In another embodiment, white light can be generated by incorporating combinations of micro LED devices designed for different emission spectrum and different wavelength conversion layers, or no wavelength conversion layers. In another exemplary embodiment, white light can be generated with a light pipe around a micro LED device designed for red emission with no overlying wavelength conversion layer, a light pipe around a micro LED device designed for blue emission with an overlying wavelength conversion layer designed for green emission, and a light pipe around a micro LED device designed for blue emission with no overlying wavelength conversion layer. [00110] In the above exemplary embodiments, a red-green-blue (RGB) subpixel arrangement is obtained, and each pixel includes three subpixels that emit red, green and blue lights, respectively. It is to be appreciated that the RGB arrangement is exemplary and that embodiments are not so limited. Examples of other subpixel arrangements that can be utilized include, but are not limited to, red-green-blue-yellow (RGBY), red-green-blue-yellow-cyan (RGBYC), or red-green-blue-white (RGBW), or other subpixel matrix schemes where the pixels may have different number of subpixels, such as the displays manufactured under the trademark name PenTile.RTM.
[00111] FIGS. 1 lB-1 IE are schematic side view illustration of various pixel
configurations in accordance with embodiments of the invention. While not specifically illustrated, each micro LED device 400 may be one of a pair of micro LED devices 400 mounted within a reflective bank layer 142 of a subpixel 108, for example, as illustrated and described above with regard to FIGS. 1A-1D.
[00112] FIG. 1 IB is a schematic side view illustration of a pixel 106 in accordance with an embodiment of the invention. As illustrated in FIG. 1 IB, each micro LED device 400 is designed to emit a deep blue (DB) color spectrum. In such an embodiment, the different wavelength conversion layers 310 can be designed to emit red (R), green (G), and blue (B) in an RGB subpixel arrangement.
[00113] FIG. 11C is a schematic side view illustration of a pixel 106 in accordance with an embodiment of the invention. As illustrated in FIG. 11C, each micro LED device 400 is designed to emit a blue (B) color spectrum. In such an embodiment, the different wavelength conversion layers 310 can be designed to emit red (R) and green (G). A wavelength conversion layer 310 is not formed over the third light distribution layer 320. In this manner an RGB subpixel arrangement is achieved without having to covert the blue light from the blue emitting subpixel. In an embodiment, the third light distribution layer 320 can be made thicker than the other two light distribution layers 320 over which wavelength conversion layers 310 are formed in order to achieve similar micro lens characteristics. For example, the thickness of the third light distribution layer 320 may be similar to the total thickness of the first light distribution layer 320 and first red wavelength conversion layer 310 (and any intermediate layers).
[00114] FIG. 1 ID is a schematic side view illustration of a pixel 106 in accordance with an embodiment of the invention. As illustrated in FIG. 1 ID, each micro LED device 400 is designed to emit an ultraviolet (UV) color spectrum. In such an embodiment, the different wavelength conversion layers 310 can be designed to emit red (R), green (G), and blue (B). [00115] FIG. 1 IE is a schematic side view illustration of a pixel 106 in accordance with an embodiment of the invention. As illustrated in FIG. 1 IE, the pixel 106 includes micro LED devices 400 designed to emit a red (R) or blue (B) color emission spectrum. As illustrated, a green (G) emitting wavelength conversion layer 310 is formed over one of the light distribution layers 320 around one of the blue emitting micro LED device 400, and a wavelength conversion layer 310 is not required to be formed over the light distribution layers 320 formed around the red emitting micro LED device 400 or the other blue emitting micro LED device 400. Such a configuration may be implemented, for example, when it is possible to fabricate and integrate blue emitting and red emitting micro LED devices that are more efficient than green emitting micro LED devices. In such an embodiment, it may be more efficient to convert blue light to green light with a wavelength conversion layer. Such a configuration may also be useful when providing a broad spectrum at the visual response peak, around 555 nm. Such a configuration may also be useful for increasing the color rendering index (CRI), for example by using a narrow red (or blue) emission spectrum from the micro LED device rather than a broader phosphor particle emission spectrum. Such a configuration may also allow for controlling the correlated control temperature (CCT) of the light emitting device, and hence controlling the warmth, without losing lumens due to conversion in the red spectrum. As described above with regard to FIG. 11C, the light distribution layer 320 formed around the red emitting micro LED device or the other blue emitting micro LED device in FIG. 1 IE may be made thicker than the other light distribution layer over which a wavelength conversion layer is formed in order to achieve similar micro lens characteristics.
[00116] Referring now to FIGS. 1 lF-11J various pixel configurations are illustrated similar to those illustrated and described above with regard to FIGS. 1 lA-1 IE with one difference being that each light distribution layer 320 in the form of a light pipe spans across multiple subpixels within a pixel 108. For example, the embodiment illustrated in FIG. 1 IF may be an exemplary RGB subpixel arrangement in which a light pipe 320 is formed around a micro LED device pair in each subpixel of the pixel 204, however, other subpixel arrangements are possible such as, but not limited to RGBY, RGBYC, RGBW, or others. In the particular cross- section illustrated, only a single micro LED device 400 of a pair is illustrated. In such arrangements the light pipe spanning across multiple subpixels within a pixel allows for color mixing between subpixels. Such a configuration may be used in applications where the micro LED devices or subpixels are far enough apart that they could otherwise be perceived by the human eye (e.g. approximately 100 μιη or more) and perceived as small dots. The color mixing associated with the light pipe configurations of FIGS. 1 IF- 11 J may be used to blend the micro LED device emissions so that they are not perceived by the human eye. One possible application may be in a heads up display where the viewing distance is short, and it is more likely that the viewer is to be capable of perceiving emission spectra from individual subpixels or micro LED devices.
[00117] While not specifically illustrated, each micro LED device 400 in FIGS. 11G- 11 J may be one of a pair of micro LED devices 400 mounted within a reflective bank layer 142 of a subpixel 108, for example, as illustrated and described above with regard to FIGS. 1A-1D. The arrangements of emission spectra for the micro LED devices 400 and wavelength conversion layers 310 is similar to that of FIGS. 1 lB-1 IE, with one difference being that the wavelength conversion layers 310 are formed over only specific portions of the light pipe 320 shared by the micro LED devices 400 in the pixel 108. Additional modifications can also be incorporated into the configurations illustrated in FIGS. 1 lG-11J. The profile of the light pipe 320 can be altered over certain micro LED devices 400. For example, the light pipe 320 can be made thicker over "naked" micro LED devices 400 over which a wavelength conversion layer 310 is not formed. The light pipes 320 of FIGS. 1 lA-11J can also be tapered, for example, as previously described with regard to FIGS. 9C-9D, or include reflective layers as previously described with regard to FIGS. 10A-10F.
[00118] Referring now to FIGS. 12A-12F, various configurations for implementing micro
LED device pairs are described. The embodiments illustrated and described with regard to FIGS. 12A-12F may be combinable with other configurations described herein. For example, the configurations illustrated and described with regard to FIGS. 12A-12E may be combinable with the pixel arrangements described above with regard to FIGS. 1 lA-1 IE, and the configurations illustrated and described with regard to FIGS. 12F may be combinable with the pixel
arrangements described above with regard to FIGS. 11-F-l 1J.
[00119] FIG. 12A illustrates a cross-sectional side view across the shorter width of a rectangular shaped reflective bank layer 142 illustrated in FIG. 7B, while FIG. 12B is an illustration of a longer width, orthogonal to the shorter width, of the rectangular shaped reflective bank layer 142 illustrated in FIG. 7B. It is to be appreciated that the particular embodiments illustrated in FIGS. 12A-12F are provided to illustrate particular examples for integrating micro LED device pairs in a redundancy and repair scheme, combined with a wavelength conversion layers for a tunable color emission spectrum. The particular embodiments illustrated include a wavelength conversion layer 310 formed over an elongated dome shaped light distribution layer 320 in the form a light pipe, where the wavelength conversion layer 310 is also formed over the reflective bank layer 142. Furthermore, FIGS. 12A-12F illustrate various top electrode configurations. However, as previously described in the preceding embodiments and figures, embodiments of the invention are not so limited. Accordingly, embodiments of the invention are not limited to the specific combinations of the top electrode configurations and redundancy and repair schemes illustrated in FIGS. 12A-12F.
[00120] In an embodiment a pair of micro LED devices 400 are bonded to a reflective bank layer 142 on or within a substrate 102 including an underlying circuitry 210. The micro LED devices 400 can be transferred and bonded to the substrate 102 as part of an array of micro LED devices 400 using a variety of techniques including a transfer bonding process, transfer using elastomeric stamps, or transfer and bonding using an electrostatic transfer head array, as previously described. Following the transfer process, and prior to formation of the passivation layers 316 and top electrode layers 318 illustrated in FIGS. 12A-12F the display substrate 102 can be examined for defective, missing, or contaminated micro LED devices. In this manner, detection of defective, missing, or contaminated micro LED devices can be used to potentially alter the deposition patterns of the passivation layer 316 and top electrode layers 318, as well as the wavelength conversion layers, and to potentially transfer replacement micro LED devices where required.
[00121] Still referring to FIGS. 12A-12B, a sidewall passivation layer 316 can be formed around the sidewalls of the micro LED devices 400. In an embodiment where the micro LED devices 400 are vertical LED devices, the sidewall passivation layer 316 covers and spans the quantum well structures 408. In accordance with embodiments of the invention, the sidewall passivation layer 316 may be transparent or semi-transparent to the visible wavelength spectrum so as to not significantly degrade light extraction efficiency from sidewalls of the micro LED devices 400. Sidewall passivation layer 316 may be formed of a variety of materials such as, but not limited to epoxy, silicone, acrylic, poly(methyl methacrylate) (PMMA), benzocyclobutene (BCB), polyimide, and polyester. In an embodiment, sidewall passivation layer 316 is formed by ink jet printing around the light emitting devices 400, followed by curing. In an embodiment, sidewall passivation layer 316 is cured with ultraviolet (UV) light to minimize volume change as a result of cure and protect the integrity of the bond between the micro LED devices and the reflective bank layer 142, though thermal curing may also be performed. Sidewall passivation layer 316 can also be deposited using other techniques such as slit coating, physical vapor deposition or chemical vapor deposition of a dielectric material such as a nitride or oxide, spin on technique such as a spin on glass, or spray coating followed by solvent evaporation. In an embodiment, sidewall passivation layer is an a-staged or b-staged coating already formed over the substrate 102 prior to bonding the micro LED devices 400 wherein the micro LED devices punch through the coating during the transfer and bonding operations, and the coating is then cured after bonding of the micro LED devices 400.
[00122] In an embodiment the sidewall passivation layer 316 at least partially covers the reflective bank layer 142. The sidewall passivation layer may completely cover the reflective bank layer 142, however, this is not required. Any combination of other insulating layers can be used to electrically insulate the reflective bank layer 142 from other electrically conductive layers. For example, insulator layer 146 can be deposited over edges of the reflective bank layer 142. The reflective bank layer 142 can be discontinuous, for example, so that sidewalls are not electrically connected to the bottom surface of the reflective bank layer 142 in electrical communication with the micro LED devices 400. In accordance with embodiments of the invention, a sidewall passivation layer 316 may not be required where a conformal dielectric barrier layer 107 is present along sidewalls of the micro LED devices 400. Alternatively, a sidewall passivation layer 316 may be formed in combination with an existing conformal dielectric barrier layer 107.
[00123] In embodiments including vertical micro LED device pairs, following the formation of optional sidewall passivation layer 316, a top electrode layer 318 is formed on the micro LED device 400 pairs and in electrical contact with the top contacts 402 and ground tie line 144. Depending upon the particular application, top electrode layer 318 may be opaque, reflective, transparent, or semi-transparent to the visible wavelength. Exemplary transparent conductive materials include amorphous silicon, transparent conductive oxides (TCO) such as indium-tin-oxide (ΠΌ) and indium- zinc-oxide (IZO), carbon nanotube film, or a transparent conductive polymer such as poly(3,4-ethylenedioxythiophene) (PEDOT), polyaniline, polyacetylene, polypyrrole, and polythiophene. In an embodiment top electrode layer 318 is approximately 50 nm - 1 μιη thick ITO-silver-ITO stack, with the silver layer thin enough to be transparent to the visible wavelength spectrum. In a particular embodiment, the top electrode layer 318 is formed by ink jet printing. In an embodiment top electrode layer 318 is
approximately 50 nm - 1 μιη thick PEDOT. Other methods of formation may include chemical vapor deposition (CVD), physical vapor deposition (PVD), or spin coating depending upon the desired area to be coated and any thermal constraints.
[00124] In accordance with embodiments of the present invention, one or more top electrode layers 318 may be used to electrically connect the micro LED device 400 pairs from the array of subpixels to ground tie line 144. A variety of configurations are possible with different redundancy and repair configurations. In interest of clarity, FIGS. 12A-12E are limited to exemplary top electrode layer 318 configurations within a single subpixel, and FIG. 12F shows an exemplary top electrode layer 318 configuration within a single pixel. A more detailed description is provided with regard to FIGS. 15-19 for various top electrode layer configurations across the pixel area.
[00125] Referring again to FIG. 12B, in one embodiment a single top electrode layer is illustrated as connecting both micro LED devices 400 of the pair to ground 144/116. For example, such a configuration may be used when both micro LED devices 400 have been determined to be transferred to the display substrate and not be defective or contaminated.
Referring to FIG. 12C, an embodiment is illustrated where a micro LED device 400X is determined to be defective or contaminated. In the embodiment illustrated, a repair micro LED device 400 is then bonded to the reflective bank layer 142, and one or more top electrode layers 318 are then formed over only the operable micro LED device 400 pair to electrically connect them to ground 144/116. FIGS. 12D-12E illustrate embodiments in which a passivation layer 316 can be formed over defective or contaminated micro LED devices 400X, or over a bonding layer 140 of a missing micro LED device. In the embodiment illustrated in FIG. 12D a single top electrode layer 318 is formed over the operable and defective, contaminated, or missing micro LED devices, where the passivation layer 316 prevents electrical contact with the defective, contaminated, or missing micro LED devices. In the embodiment illustrated in FIG. 12E, one or more top electrode layers 318 are formed only over the operable micro LED devices.
[00126] Optional wavelength distribution layer 320, optional matching layer 322, wavelength conversion layer 310, and optional barrier layer 324 may then be formed as described above with regard to FIG. 9A. Referring briefly back to FIGS. 11A,1 IF a black matrix (or alternatively white matrix) material 202 is illustrated between the reflective bank layers 142 in order to block light transmission, and to separate bleeding of light between adjacent subpixels. Black (or white) matrix 202 can be formed from a method that is appropriate based upon the material used, and composition of layers already formed. Manner of formation may also be determined by whether the black (or white) matrix is formed in a single side manner (see FIG. 14A) or a top press down manner (see FIG. 14B). For example, black (or white) matrix 202 can be applied using ink jet printing, sputter and etching, spin coating with lift-off, or a printing method. In some embodiments, black (or white) matrix 202 is formed by ink jet printing and UV cured in order to not thermally degrade the phosphor particles in a wavelength conversion layer 110 already formed. Exemplary black matrix materials include carbon, metal films (e.g. nickel, aluminum, molybdenum, and alloys thereof), metal oxide films (e.g. chromium oxide), and metal nitride films (e.g. chromium nitride), organic resins, glass pastes, and resins or pastes including a black pigment or silver particles. Exemplary white matrix materials include metal particles or Ti02 particles loaded win a polymer, organic resin, or glass paste, for example.
[00127] Referring again to FIGS. 12A-12E a color filter layer 328 may optionally be formed over the wavelength conversion layer 310 to filter out colors emitting through the wavelength conversion layer 310 other than those desired and to sharpen the emission spectrum of the light emitting device. By way of example, a red color filter layer 328 may be placed over a wavelength conversion layer 310 including red emitting phosphor particles in order to filter out colors other than red, a green color filter layer 328 may be placed over a wavelength conversion layer 310 including green emitting phosphor particles in order to filter out colors other than green, and a blue color filter layer 328 may be placed over a wavelength conversion layer 310 including blue emitting phosphor particles in order to filter out colors other than blue. Referring back to FIG. 1 IB, in an embodiment, a blue color filer may not be necessary over a blue wavelength conversion layer 310 wherein the underlying micro LED device 400 is deep blue emitting. Referring back to FIG. 11C, in an embodiment, a blue color filer may not be necessary over naked (e.g. no wavelength conversion layer) blue emitting underlying micro LED device 400. It is to be appreciated that these configurations are exemplary and a variety of
configurations are possible depending upon desired light emission spectrum. Suitable materials for the color filter include pigments or dyes as previously described above. In an embodiment, color filter layer 328 includes a pigment or dye dispersed in a transparent matrix material. In an embodiment, the matrix material is the same polymer used for the wavelength conversion layer 310, such as epoxy, silicone, or acrylic. Likewise, the color filter may be formed using similar techniques, such as ink jet printing with UV cure. In an embodiment, the wavelength conversion layer 310 has an index of refraction within 0.3, or more particularly within 0.1, of the index of refraction for the wavelength conversion layer 310. In the embodiments illustrated in FIGS. 12A-12E the color filter layer 328 is formed after the black matrix 202. In other embodiments, the color filter layer 328 is formed before the black matrix 202.
[00128] Referring now to FIG. 12F a cross-sectional side view illustration is provided of a light pipe around a plurality of micro LED devices with top and bottom contacts within a plurality of reflective bank structures, and a wavelength conversion layer over the light pipe in accordance with embodiments of the invention. The configuration illustrated in FIG. 12F is similar to that of FIG. 12A, with the difference being that the light pipe 320 is formed over multiple subpixels in a pixel, with each reflective bank layer 142 corresponding to a separate subpixel that is independently addressable by its own underlying circuitry 210. Similar to the other configurations, the wavelength conversion layer 310 may be wider than the openings in the patterned bank layer 304 including the multiple reflective bank layers 142.
[00129] FIGS. 13A-13B are cross-sectional side view illustrations of a light pipe around a plurality of micro LED devices with bottom contacts within a reflective bank structure, and a wavelength conversion layer over the light pipe in accordance with embodiments of the invention. FIG.13C is a cross-sectional side view illustrations of a light pipe around a plurality of micro LED devices with bottom contacts within a plurality of reflective bank structures, and a wavelength conversion layer over the light pipe in accordance with embodiments of the invention. FIGS. 13A-13C are similar to those of FIGS. 12A-12B and 12F with one difference being that the micro LED devices 400 include bottom contacts 404, 403 rather than both a bottom and top contact. As a result, it may not be required to form a top electrode layer to contact the ground tie line 144. Sidewall passivation layer 316 also may be omitted, and the light pipe 320 or other layers can electrically insulate the reflective bank structure layers 142A, 142B and quantum well structure 408. As illustrated, reflective bank structure layers 142A, 142B are electrically insulated from one another.
[00130] Referring now to FIGS. 14A-14B, alternative cover designs are described and illustrated for packaging the displays in accordance with embodiments. FIG. 14A is an illustration a single side fabrication manner for applying wavelength conversion layers and a black (or white) matrix between subpixels in accordance with an embodiment. As illustrated, the wavelength conversion layers 310 and matrix 202 are formed on substrate 102 prior to applying a cover 500 over the light emitting devices. Top cover 500 can be rigid or flexible, and can be applied in a variety of manners. In an embodiment, top cover 500 is a transparent plastic material and is laminated onto the display substrate 102. In an embodiment, top cover 500 is a rigid glass plate that is applied over the light display substrate 102, and sealed around the peripheral edges of the display substrate 102 with a sealant. A getter material may optionally be placed inside the sealed region containing the micro LED devices and the wavelength conversion layer 310 to absorb moisture, particularly if the wavelength conversion layer includes quantum dots.
[00131] FIG. 14B is an illustration of a top press down manner for applying wavelength conversion layers and a black (or white) matrix between subpixels in accordance with an embodiment. In the embodiment illustrated in FIG. 14B, the matrix 202, wavelength conversion layer 310, oxygen barrier film 324, and optional color filter layer 328 are formed on the top cover 500 and pressed down over the array of micro LED devices 400 and light distribution layers 320. In an embodiment, the top cover 500 of FIG. 14B is a rigid glass plate, and is sealed around the peripheral edges of the display substrate 102 with a sealant. A getter material may optionally be placed inside the sealed region containing the micro LED devices and the wavelength conversion layer 310 to absorb moisture, particularly if the wavelength conversion layer includes quantum dots. Either of the top cover configurations of FIGS. 14A-14B can be used when forming the display devices described and illustrated herein.
[00132] FIG. 15 is a top schematic view illustration of an array of micro LED devices including a variety of configurations described in FIGS. 12A-12F in accordance with
embodiments of the invention. In the particular embodiments illustrated in FIG. 15, a top electrode layer 318 is formed over a plurality of bank openings 128, and may be formed over a plurality of subpixels or pixels 106. In an embodiment, the top electrode layer 318 is formed over all of the micro LED devices 400 in the pixel area.
[00133] The embodiment illustrated in FIG. 12B is illustrated in the labeled pixel 106 in which the micro LED device 400 pairs are transferred without detection of any missing, defective, or contaminated micro LED devices. In this embodiment, the repair micro LED sites 401 are open, and repair micro LED devices have not been transferred.
[00134] The embodiment illustrated in FIG. 12D is also illustrated as one of the red- emitting subpixels in FIG. 15 including a repair micro LED device, where the top electrode layer 318 is formed over both the red emitting micro LED devices 400 and the defective or contaminated micro LED device 400X, where the defective or contaminated micro LED device 400X is covered with the passivation layer 316.
[00135] Similarly, an embodiment is illustrated for one of the blue-emitting subpixels of
FIG. 15 including a repair micro LED device, where the top electrode layer 318 is formed over both the blue emitting micro LED devices 400 and the bonding layer 140 corresponding to a missing micro LED device.
[00136] FIG. 16 is a top schematic view illustration of an array of micro LED devices including a variety of configurations described in FIGS. 12A-12F in accordance with
embodiments of the invention. In the particular embodiments illustrated in FIG. 16, the arrangements of micro LED devices 400 are the same as those described above with regard to FIG. 15. The embodiments illustrated in FIG. 16 differ from those illustrated in FIG. 15 particularly in formation of a plurality of separate top electrode layers 318. In one embodiment, such as those illustrated in the labeled pixel 106 where a micro LED device 400 is not placed on the repair bonding site 401, it is not required for the top electrode layers 318 to be formed thereon. Accordingly, the length of the top electrode layer 318 can be determined based upon whether or not a replacement micro LED device is added. The top electrode layer 318 may also be formed over the bonding site 401.
[00137] In some embodiments, the top electrode layers 318 are formed by ink jet printing or screen printing. Inkjet printing in particular may be suitable since it is a non-contact printing method. Conventional AMOLED backplane processing sequences typically blanket deposit the tope electrode layer in a deposition chamber followed by singulation of the individual backplanes from a larger substrate. In accordance with embodiments of the invention, a display substrate 102 can be singulated from a larger substrate prior to transferring the array of micro LED devices. In an embodiment ink jet printing or screen printing provides a practical approach for patterning the individual top electrode layers without requiring a separate mask layer for each particular configuration in the redundancy and repair scheme. Line width can also vary for the top electrode layers 118 depending upon application. For example, the line width may approach that of the subpixel area. Alternatively, the line width may be minimal. For example, line widths as low as approximately 15 microns may be accomplished with commercially available inkjet printers, and line widths as low as approximately 30 microns may be accomplished with commercially available screen printers. Accordingly, the line width may be more or less than the maximum width of the micro LED devices.
[00138] FIG. 17 is a top schematic view illustration of an array of micro LED devices including a variety of configurations described in FIGS. 12A-12F in accordance with
embodiments of the invention. In the particular embodiments illustrated in FIG. 17, the arrangements of micro LED devices 400 are the same as those described above with regard to FIGS. 15-16. The embodiments illustrated in FIG. 17 differ from those illustrated in FIG. 16 particularly in formation of the top electrode layers 318. The embodiments illustrated in FIG. 16 were shown as altering the length of the top electrode layers 318, while the embodiments illustrated in FIG. 17 are shown as altering the path of the top electrode layers 318, and/or number of top electrode layers 318. For example, the top electrode layers 318 illustrated in FIG. 17 may correspond to those illustrated in FIG. 12C and FIG. 12E. In the exemplary
embodiments illustrated in FIG. 17 for the red and green emitting micro LED devices, a separate top electrode layer 318 can be formed for each micro LED device 400 in the subpixel. In the embodiment illustrated in the bottom-most blue-emitting subpixel, a single top electrode layer 318 can be formed for multiple micro LED devices 400 in a subpixel where the path is adjusted to avoid a bonding layer 140, or alternatively a defective or contaminated micro LED device. In this manner, adjusting the path of the top electrode layers 318 can be used in the alternative to, or in addition to, adjusting deposition of the passivation layer 316 to cover defective or contaminated micro LED devices or the bonding sites of missing micro LED devices.
[00139] The formation of separate top electrode layer(s) 318 may provide an additional benefit during electrical testing of the display substrate 102 after formation of the top electrode layer(s) 318. For example, prior to formation of the top electrode layer 318 it may not have been possible to detect certain defects resulting in shorting of a micro LED device 400S. The implication of a shorted micro LED device 400S could result in a dark subpixel in which all of the current flows through the shorted micro LED devices 400S rather than any of the other micro LED devices in the subpixel. In the embodiment illustrated in FIG. 18 the top electrode layer 318 connected to a shorted micro LED device 400S is cut using a suitable technique such as laser scribing. In this manner, electrical shorts that could not have been or were not detected during the integrated testing method previously described could potentially be detected during an electrical test with the application of electrical current through the display after formation of the top electrode layer 318. In such an embodiment, if a micro LED device 400S is shorted, the top electrode layer 318 to the micro LED device 400S can be cut, allowing the redundant and/or repair micro LED device to provide the emission from the subpixel.
[00140] FIG. 19 illustrates an alternative embodiment where rather than cutting or scribing the top electrode layer 318, the reflective bank layer 142 can be formed to include multiple bottom contact areas 124 that can be cut using a suitable technique such as laser scribing to segregate irregular micro LED devices. In the particular embodiment illustrated, the bottom contact area 124 includes separate landing areas for the micro LED devices. In the particular embodiment illustrated, the bottom contact area 124 supporting the micro LED device 400S is cut using a suitable technique such as laser scribing to segregate the irregular micro LED device so that it is not in electrical communication with the underlying TFT circuitry through filled opening 131.
[00141] Up until this point, embodiments of the invention have been illustrated and described with a display substrate 102 including an underlying circuitry 210. However, embodiments of the invention are not so limited. For example, the circuitry can be provided on top of the substrate in the form of micro chips. FIG. 20 is a top view schematic illustration of a smart pixel display including a redundancy and repair site configuration in accordance with an embodiment of the invention. As shown the display panel 200 includes a substrate 201 which may be opaque, transparent, rigid, or flexible. A smart pixel area 206 may include separate subpixels of different emission colors, and a micro controller chip 208 including the working circuitry described above with regard to the TFT substrate. In this manner, rather than forming the pixel area on a TFT substrate including the working circuitry, the micro LED devices 400 and micro controller chip 208 are both transferred to the same side or surface of the substrate 201. Electrical distribution lines can connect the micro controller chip 208 to the data driver circuit 109 and scan driver circuit 112 similarly as with a TFT substrate. Likewise, reflective bank layer structures can be formed on the substrate 201 similarly as described above for the TFT substrate to contain the micro LED devices 400 and repair bonding site 401. Similarly, a top electrode layer 318, or separate top electrode layers 318 can connect the micro LED devices 400 to a ground tie line 144 or ground ring 116 similarly as described above with regard to the TFT substrate configuration. Wavelength conversion layers, and other optional layers, can also be formed over the micro LED devices 400 to generate the determined color emission spectrum as described above. Thus, similar color emission configurations including wavelength conversion layers, redundancy, and repair site configurations can be formed with the smart pixel
configuration as described above for the TFT substrate configurations.
[00142] FIG. 21 illustrates a display system 2100 in accordance with an embodiment. The display system houses a processor 2110, data receiver 2120, a display 2130, and one or more display driver ICs 2140, which may be scan driver ICs and data driver ICs. The data receiver 2120 may be configured to receive data wirelessly or wired. Wireless may be implemented in any of a number of wireless standards or protocols including, but not limited to, Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16 family), IEEE 802.20, long term evolution (LTE), Ev- DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivatives thereof, as well as any other wireless protocols that are designated as 3G, 4G, 5G, and beyond. The one or more display driver ICs 2140 may be physically and electrically coupled to the display 2130.
[00143] In some embodiments, the display 2130 includes one or more micro LED devices
400 and wavelength conversion layers 310 that are formed in accordance with embodiments of the invention described above. For example, the display 2130 may include a plurality of micro LED devices, a plurality of light distribution layers around the micro LED devices, and a plurality of wavelength conversion layers over the light distribution layers.
[00144] Depending on its applications, the display system 2100 may include other components. These other components include, but are not limited to, memory, a touch-screen controller, and a battery. In various implementations, the display system 2100 may be a television, tablet, phone, laptop, computer monitor, kiosk, digital camera, handheld game console, media display, ebook display, or large area signage display. [00145] In utilizing the various aspects of this invention, it would become apparent to one skilled in the art that combinations or variations of the above embodiments are possible for integrating micro LED devices and wavelength conversion layers into display applications. Although the present invention has been described in language specific to structural features and/or methodological acts, it is to be understood that the invention defined in the appended claims is not necessarily limited to the specific features or acts described. The specific features and acts disclosed are instead to be understood as particularly graceful implementations of the claimed invention useful for illustrating the present invention.

Claims

CLAIMS What is claimed is:
1. A display panel comprising:
a display substrate including an array of pixels, each pixel including multiple subpixels, with each of the subpixels designed for a different color emission spectrum;
an array of micro LED device pairs, wherein a pair of micro LED devices is mounted within each subpixel, and
an array of wavelength conversion layers comprising phosphor particles over the array of micro LED device pairs.
2. The display panel of claim 1, wherein the array of wavelength conversion layers comprises multiple groups of wavelength conversions layers, with each group designed to emit a different color emission spectrum, and the different groups of wavelength conversion layers are separated into different subpixels.
3. The display panel of claim 2, wherein a wavelength conversion layer is not formed over a micro LED device pair for one of the subpixels.
4. The display panel of claim 2, wherein the array of micro LED device pairs is designed to emit a single color emission spectrum.
5. The display panel of claim 1, wherein the array of micro LED device pairs includes groups of micro LED device pairs, with each group designed to emit a different color emission spectrum, and the different groups of micro LED device pairs are separated into different subpixels.
6. The display panel of claim 5, wherein a wavelength conversion layer is formed over a first group of micro LED device pairs in a first subpixel, and a wavelength conversion layer is not formed over a second group of micro LED device pairs in a second subpixel.
7. The display panel of claim 1, wherein each wavelength conversion layer is formed over a only a single micro LED device.
8. The display panel of claim 1, wherein each wavelength conversion layer is formed over a micro LED device pair.
9. The display panel of claim 1, wherein the wavelength conversion layers are dome shaped.
10. The display panel of claim 9, wherein the wavelength conversion layers have a shape selected from the group consisting of: a hemispherical outer surface and elongated dome shaped.
11. The display panel of claim 1, further comprising an array of light distribution layers between the array of wavelength conversion layers and corresponding micro LED device pairs.
12. The display panel of claim 11, wherein the light distribution layers are light pipes, each light distribution layer is characterized with a lateral length that is greater than a thickness of the light distribution layer.
13. The display panel of claim 1, wherein the phosphor particles are quantum dots.
14. The display panel of claim 1, wherein the phosphor particles exhibit luminescence due to their composition that do not qualify as quantum dots.
15. The display panel of claim 1, wherein the micro LED devices each have a maximum width of 1 μιη - 100 μιη.
16. The display panel of claim 1, further comprising a reflective bank layer corresponding to each subpixel, wherein each reflective bank layer is independently addressable from working circuitry within the display substrate.
17. The display panel of claim 1, further comprising a ground line on or within the display substrate.
18. The display panel of claim 17, further comprising one or more top electrode layers electrically connecting the array of micro LED device pairs to the ground line.
19. The display panel of claim 18, wherein the one or more top electrode layers comprise a first top electrode layer electrically connecting a first micro LED device of a micro LED device pair to the ground line, and a separate top electrode layer connecting a second micro LED device of the micro LED device pair to the ground line.
20. The display panel of claim 12, wherein each light distribution layer in the form of a light pipe spans over more than one subpixel and the micro LED device pairs mounted within the more than one subpixel.
21. The display panel of claim 12, wherein each light distribution layer in the form of a light pipe spans over all of the multiple subpixels within a corresponding pixel and the micro LED device pairs mounted within the multiple subpixels of the pixel.
22. The display panel of claim 12, wherein each light distribution layer in the form of a light pipe spans over no more than one subixel and the micro LED device pairs mounted within the subpixel.
PCT/US2014/041487 2013-06-18 2014-06-09 Led display with wavelength conversion layer WO2014204694A1 (en)

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CN201480034717.6A CN105339996B (en) 2013-06-18 2014-06-09 Light-emitting diode display with wavelength conversion layer
JP2016521438A JP6290389B2 (en) 2013-06-18 2014-06-09 LED display having wavelength conversion layer
EP14734362.8A EP2997564B1 (en) 2013-06-18 2014-06-09 Led display with wavelength conversion layer
KR1020157035574A KR101704334B1 (en) 2013-06-18 2014-06-09 Led display with wavelength conversion layer

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