KR102634305B1 - LED pixel unit - Google Patents

Abstract

The disclosed LED pixel unit includes a light shield wall having a first hole, a second hole, and a third hole extending from the upper surface to the lower surface; a first unit light emitting body disposed to fill the first hole; a second unit light emitting body arranged to fill the second hole; and a third unit light emitter arranged to fill the third hole, wherein the first unit light emitter, the second unit light emitter, and the third unit light emitter are respectively the first hole, the second hole, and the third unit light emitter. A first color filter, a second color filter, and a third color filter disposed on an upper inner side of each hole, and a first LED located below each of the first color filter, the second color filter, and the third color filter. chip, the second LED chip and the third LED chip, each between the first color filter and the first LED chip, between the second color filter and the second LED chip, and between the third color filter and the It includes a first wavelength conversion unit, a second wavelength conversion unit, and a third wavelength conversion unit located between the third LED chips, wherein the first LED chip, the second LED chip, and the third LED chip emit light of the same wavelength. The first wavelength converter, the second wavelength converter, and the third wavelength converter convert the light of the same wavelength received from the first LED chip, the second LED chip, and the third LED chip into white light. , the first color filter, the second color filter, and the third color filter separate and emit light of first, second, and third wavelengths from the white light.

Description

LED pixel unit{LED pixel unit}

The present invention relates to an LED pixel unit, and more specifically, to an LED pixel unit that constitutes one pixel in an LED display device.

In a typical full-color LED display device, each pixel is composed of a red LED, a green LED, and a blue LED. Additionally, in recent years, an LED display device in which each pixel is composed of red LED, green LED, blue LED, and white LED has been proposed. Typically, red LED, green LED, and blue LED are each manufactured as a package and mounted on a board. In this case, the LEDs that make up each pixel are spaced apart, making it difficult to obtain high-quality resolution. And when pixels are composed of package-level LEDs, it was difficult to apply them to the micro LED display device that has recently been attracting attention. Additionally, in the past, an LED pixel unit has been proposed in which red LED, green LED, and blue LED that constitute one pixel are mounted in one package. In this case, the spacing between LEDs within one pixel, that is, between subpixels, is reduced, but it is difficult to reduce the spacing between pixels. Additionally, light interference may occur between the red LED, green LED, and blue LED.

CN104282237(2015.01.14.)

The problem solved by the present invention is to provide an LED pixel unit that can minimize the distance between pixels and the distance between LEDs within each pixel when applied to an LED display device.

An LED pixel unit according to one aspect of the present invention includes a light shield wall having a first hole, a second hole, and a third hole extending from the upper surface to the lower surface; a first unit light emitting body disposed to fill the first hole; a second unit light emitting body arranged to fill the second hole; and a third unit light emitter arranged to fill the third hole, wherein the first unit light emitter, the second unit light emitter, and the third unit light emitter are respectively the first hole, the second hole, and the third unit light emitter. A first color filter, a second color filter, and a third color filter disposed on an upper inner side of each hole, and a first LED located below each of the first color filter, the second color filter, and the third color filter. chip, the second LED chip and the third LED chip, each between the first color filter and the first LED chip, between the second color filter and the second LED chip, and between the third color filter and the It includes a first wavelength conversion unit, a second wavelength conversion unit, and a third wavelength conversion unit located between the third LED chips, wherein the first LED chip, the second LED chip, and the third LED chip emit light of the same wavelength. The first wavelength converter, the second wavelength converter, and the third wavelength converter convert the light received from the first LED chip, the second LED chip, and the third LED chip into white light, and the third wavelength converter converts the light received from the first LED chip, the second LED chip, and the third LED chip into white light. The first color filter, the second color filter, and the third color filter separate and emit light of a first wavelength, a second wavelength, and a third wavelength from the white light.

According to one embodiment, the first LED chip, the second LED chip, and the third LED chip emit light in contact with the first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit, respectively. It includes a surface and a pad formation surface that faces the light emitting surface and is exposed to the outside.

According to one embodiment, a first conductive electrode pad and a second conductive electrode pad are provided on the pad formation surface, and the first conductive electrode pad and the second conductive electrode pad are formed on the lower surface of the light shield wall. It protrudes downward to form a flip type.

According to one embodiment, top surfaces of the first color filter, the second color filter, and the third color filter are on the same level as the top surface of the light shield wall.

According to one embodiment, the first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit form the same height.

According to one embodiment, the first LED chip, the second LED chip, and the third LED chip are blue LED chips that emit blue light with a wavelength of 400 to 480 nm depending on the application of power, and the first wavelength conversion unit and the third LED chip The second wavelength conversion unit and the third wavelength conversion unit may be a yellow phosphor.

According to one embodiment, the first, second and third holes form vertical or inclined holes.

According to one embodiment, the first color filter, the second color filter, and the third color filter may be a red filter, a green filter, and a blue filter that separate red light, green light, and red light from white light.

According to one embodiment, the first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit are each formed by mixing two or more phosphors including a green phosphor and a red phosphor.

According to one embodiment, the first LED chip, the second LED chip, and the third LED chip each include a first conductive type semiconductor layer including the light-emitting surface, and a second conductive type semiconductor layer including the pad formation surface. It includes a semiconductor layer and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer.

According to one embodiment, the first LED chip, the second LED chip, and the third LED chip each include a transparent semiconductor growth substrate including the light emission surface, and a first conductive type grown on the transparent semiconductor growth substrate. It includes a semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

According to one embodiment, at least a portion of a side surface of the transparent semiconductor growth substrate is in contact with an inner surface of the optical shield wall, and at least one of the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer has a side surface of the optical shield wall. It is exposed to the outside without contact with the shield wall.

According to another aspect of the present invention, there is provided a method of manufacturing an LED pixel unit, which method includes manufacturing a first unit light emitter, a second unit light emitter, and a third unit light emitter; The first unit light emitting body, the second unit light emitting body, and the third unit light emitting body are spaced apart, and the first group and the second unit light emitting body each include the first unit light emitting body, the second unit light emitting body, and the third unit light emitting body. Arranging the first unit light emitting body, the second unit light emitting body, and the third unit light emitting body so that the groups are spaced apart from each other; A light shield wall forming step of forming a light shield wall filling between the first unit light emitter, the second unit light emitter, and the third unit light emitter and between the first group and the second group; and cutting the light shield wall to separate the first group from the second group, wherein the first unit light emitter, the second unit light emitter, and the third unit light emitter each form an electrode pad. The light emission of the first LED chip, the second LED chip, and the third LED chip including a surface and a light emission surface opposite to the electrode pad formation surface, and the first LED chip, the second LED chip, and the third LED chip. A first wavelength converter, a second wavelength converter, and a third wavelength converter stacked on a surface, and a first wavelength converter stacked on the first wavelength converter, the second wavelength converter, and the third wavelength converter. It includes a color filter, a second color filter, and a third color filter, wherein the first LED chip, the second LED chip, and the third LED chip emit light of the same wavelength, and the first wavelength conversion unit and the third LED chip emit light of the same wavelength. The second wavelength converter and the third wavelength converter convert the light of the same wavelength into white light, and the first color filter, the second color filter, and the third color filter separate light of different wavelengths from the white light. send.

According to one embodiment, the step of manufacturing the first unit light emitter, the second unit light emitter, and the third unit light emitter includes a color filter including a first color filter, a second color filter, and a third color filter on a temporary substrate. forming an array film; Forming a wavelength conversion unit on the color filter array film to form a laminated film of the color filter array film and the wavelength conversion unit; Manufacturing an LED wafer including an electrode pad formation surface and a light-emitting surface opposing the electrode pad formation surface; manufacturing a light emitter plate by laminating the lamination film on the LED wafer so that the wavelength conversion portion is in contact with the light emitting surface; and a first unit light emitter including the first LED chip, the first wavelength conversion unit, and the first color filter, and the second LED chip, the second wavelength conversion unit, and the second color filter from the light emitter plate. It includes cutting the light emitter plate to separate the second unit light emitter including the third LED chip, the third wavelength converter, and the third color filter.

According to one embodiment, forming the color filter array film includes forming a first color filter at each of several locations on the temporary substrate, avoiding the first color filter and being continuous with the first color filter. forming a second color filter at several locations on the temporary substrate, and forming a third color filter at several locations on the temporary substrate to avoid the first color filter and the second color filter and to be continuous with the second color filter. It includes the step of forming.

According to one embodiment, forming the laminated film includes forming a wavelength conversion part covering all of the first color filter, the second color filter, and the third color filter to a uniform thickness over the entire area of one surface of the color filter array film. form

According to one embodiment, manufacturing the LED wafer includes sequentially growing a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the upper surface of the sapphire wafer, and growing the second conductive semiconductor layer in a plurality of regions. exposing the first conductive semiconductor layer in several regions by etching and removing the semiconductor layer and the active layer, forming a first conductive electrode pad in each of the several regions, and forming a first conductive electrode pad on the second conductive semiconductor layer. By forming a second conductive type electrode pad paired with the first conductive type electrode pad, one side of the LED wafer is formed as the electrode pad formation surface provided with a plurality of electrode pad pairs, and the other side of the LED wafer is formed as the light emitting surface. It includes the step of forming into cotton.

According to one embodiment, the step of cutting the light emitter plate includes the first unit light emitter, the second unit light emitter, and the third unit light emitter, respectively, the first color filter, the second color filter, and the third color. and cutting the illuminant plate to include any one of a filter and one of a plurality of electrode pad pairs.

According to one embodiment, the lower surface of the sapphire wafer constitutes the light-emitting surface, and the step of manufacturing the light emitter plate may bring the wavelength conversion unit into direct contact with the lower surface of the sapphire wafer.

According to one embodiment, the step of manufacturing the LED wafer further includes separating the sapphire wafer from the epi layer including the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, In the step of manufacturing the light emitter plate, the wavelength conversion unit may be brought into direct contact with one surface of the epitaxial layer from which the sapphire wafer substrate is separated.

According to one embodiment, in the step of arranging the first unit light emitter, the second unit light emitter, and the third unit light emitter, the first unit light emitter, the second unit light emitter, and the third unit light emitter are on a plane having the same level. They are arranged at the same height, and the step of forming the light shield wall is formed at a height that entirely covers at least the first color filter, the second color filter, and the third color filter.

According to another aspect of the present invention, an LED pixel unit is provided, wherein the LED pixel unit is a first unit light emitter. a second unit light emitter and a third unit light emitter; Between the first unit light emitting body and the second unit light emitting body, between the second unit light emitting body and the third unit light emitting body, and surrounding the outer surfaces of the first unit light emitting body, the second unit light emitting body, and the third unit light emitting body. It includes a light shield wall formed, wherein each of the first unit light emitter, the second unit light emitter, and the third unit light emitter includes an electrode pad formation surface and a light emission surface opposite to the electrode pad formation surface. An LED chip, a second LED chip, and a third LED chip, and a first wavelength conversion unit and a second wavelength conversion unit formed on the light emission surfaces of the first LED chip, the second LED chip, and the third LED chip, respectively. And a third wavelength conversion unit, and a first color filter, a second color filter, and a third color filter formed on the first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit, respectively, The first LED chip, the second LED chip, and the third LED chip emit light of the same wavelength, and the first wavelength converter, the second wavelength converter, and the third wavelength converter convert light of the same wavelength into white light. The first color filter, the second color filter, and the third color filter separate the white light into light of different wavelengths and emit it.

Here, a first conductive electrode pad and a second conductive electrode pad are provided on the pad formation surface, and the first conductive electrode pad and the second conductive electrode pad protrude below the lower surface of the light shield wall. and are on the same level as the upper surfaces of the first color filter, the second color filter, and the third color filter and the upper surface of the light shield wall, and the first wavelength converter, the second wavelength converter, and the light shield wall. The third wavelength conversion unit forms the same height.

According to the present invention, when applied to an LED display device, an LED pixel unit is provided that can minimize the distance between pixels and the distance between subpixels within each pixel, and this LED pixel unit is a general LED display device. Of course, it can be applied to micro LED display devices. In existing LED display devices, there was a limit to reducing the pixel size to approximately ^200㎛2 , but according to the present invention, the pixel size can be greatly reduced to approximately ^100㎛2 or less, which can be applied to a UHD level display. Additionally, according to the present invention, there is an advantage that the manufacturing process is simple. In addition, light interference between unit light emitters constituting a subpixel can be almost completely blocked.

1 is a plan view showing an LED pixel unit according to an embodiment of the present invention.
Figure 2 is a cross-sectional view taken along II in Figure 1;
FIG. 3 is a plan view showing a micro LED display panel to which the LED pixel unit shown in FIG. 1 is applied.
Figure 4 is a diagram for explaining a method of manufacturing an LED pixel unit according to an embodiment of the present invention.
FIG. 5 is a diagram for specifically explaining the first, second, and third unit light emitting unit manufacturing steps of the LED pixel unit manufacturing method shown in FIG. 4.
FIG. 6 is a diagram for explaining the steps of forming a color filter array film and a wavelength conversion unit in the first, second, and third unit light emitting unit manufacturing steps.
Figure 7 is a diagram for explaining the step of manufacturing an LED wafer in the first, second, and third unit light emitter manufacturing steps.
Figure 8 is a diagram for explaining another example of the step of manufacturing an LED wafer.

Hereinafter, preferred embodiments of the present invention will be described with reference to the attached drawings.

FIG. 1 is a plan view showing an LED pixel unit according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II of FIG. 1, and FIG. 3 is a micro LED display panel to which the LED pixel unit shown in FIG. 1 is applied. This is a floor plan showing.

1 to 3, the LED pixel unit 1 according to an embodiment of the present invention largely includes a light shield wall 100 and first, second, and second unit light emitters 200, 300, and 400. Includes.

The light shield wall 100 includes an upper surface and a lower surface parallel to each other, and a first vertical hole 101, a second vertical hole 102, and a third vertical hole from the upper surface to the lower surface of the light shield wall 100. Vertical holes 103 are formed in parallel. The light shield wall 100 is formed to cover the side surfaces of each of the first, second, and third unit light emitters 200, 300, and 400 having a rectangular parallelepiped shape, so that the first vertical hole 101 and the first vertical hole 101 The second vertical hole 102 and the third vertical hole 103 may be formed in a substantially square shape. Inclined holes may be used instead of vertical holes.

The first unit light emitting body 200 is disposed to fill the first vertical hole 101, and includes a first color filter 230 disposed on an upper inner side of the first vertical hole 101, and A first LED chip 210 disposed vertically below the one-color filter 230, and a first wavelength conversion unit 220 located between the first color filter 230 and the first LED chip 210. Includes.

In addition, the second unit light emitter 300 is disposed to fill the second vertical hole 102, and includes a second color filter 330 disposed on an upper inner side of the second vertical hole 102, A second LED chip 310 disposed vertically below the second color filter 330, and a second wavelength conversion unit located between the second color filter 330 and the second LED chip 310 ( 320).

In addition, the third unit light emitter 400 is disposed to fill the third vertical hole 103, and includes a third color filter 430 disposed on an upper inner side of the third vertical hole 103, A third LED chip 410 disposed vertically below the third color filter 430, and a third wavelength conversion unit located between the third color filter 430 and the third LED chip 410 ( 420).

At this time, the first LED chip 210, the second LED chip 310, and the third LED chip 410 all emit light in the same blue wavelength band. In addition, the first wavelength conversion unit 220, the second wavelength conversion unit 320, and the third wavelength conversion unit 420 are wavelength conversion units containing a yellow phosphor, and the first LED chip 210 ), the light in the blue wavelength band received from the second LED chip 310 and the third LED chip 410 is wavelength converted to produce white light by mixing the wavelength-converted light and the non-wavelength-converted light.

The first color filter 230 separates and emits only the light of the first wavelength, that is, red light, from the white light obtained from the combination of the first LED chip 210 and the first wavelength conversion unit 220. Additionally, the second color filter 330 separates and emits only the light of the second wavelength, that is, green light, from the white light obtained from the combination of the second LED chip 310 and the second wavelength conversion unit 320. Additionally, the third color filter 430 separates and emits only the third wavelength light, that is, blue light, from the white light obtained from the combination of the third LED chip 410 and the third wavelength converter 420. Accordingly, in the LED pixel unit 1, the first unit light emitter 200, the second unit light emitter 300, and the third unit light emitter 400 of the chip unit constitute subpixels that emit red light, green light, and blue light, respectively. Forms one pixel within an LED display panel.

According to this embodiment, the first LED chip 210, the second LED chip 310, and the third LED chip 410 are the first wavelength conversion unit 220 and the second wavelength conversion unit, respectively. (320), the light emitting surface in contact with the third wavelength conversion unit 330, and the first vertical hole 101, the second vertical hole 102, and the third vertical hole ( It includes a pad formation surface exposed to the outside through the lower part of 102). As will be described in detail below, the first LED chip 210, the second LED chip 310, and the third LED chip 410 each have first, second, and third wavelength conversion units (220, 320). , 420), and is provided with a first conductive electrode pad and a second conductive electrode pad (E1, E2) on a pad formation surface located opposite to the light emitting surface in contact with the first LED chip 210 and the first LED chip 210. 2 LED chip 310 and the third LED chip 410 receive power from the outside through the first conductive electrode pad (E1) and the second conductive electrode pad (E2) and solder bumps (not shown) connected thereto. It can be supplied and individually driven. At this time, the first conductive electrode pad (E1) and the second conductive electrode pad (E2) protrude below the lower surface of the light shield wall 100, and are electrodes (not shown) on an external substrate (not shown). ) can be easily connected to bumps (not shown) connected to the bumps (not shown).

Meanwhile, the first LED chip 210, the second LED chip 310, and the third LED chip 410 each have transparent semiconductor growth substrates 211, 311 included in the upper part including the light emission surface. 411), and a first conductive semiconductor layer (212, 312, 412), an active layer (213, 313, 413), and a second conductive semiconductor layer (214) grown on the transparent semiconductor growth substrate (211, 311, 411) , 314, 414). The transparent semiconductor growth substrates 211, 311, and 411 may be sapphire substrates. The first conductive semiconductor layers (212, 312, 412), active layers (213, 313, 413), and second conductive semiconductor layers (214, 314, 414) are grown on the sapphire substrate (211, 311, 411). It may be a gallium nitride-based compound semiconductor layer. The first conductive semiconductor layers 212, 312, and 412 may be n-type semiconductor layers, and the second conductive semiconductor layers 214, 314, and 414 may be p-type semiconductor layers. The active layers 213, 313, and 413 may include multi quantum wells.

The first color filter 230, the second color filter 330, and the third color filter 430 are connected to the first vertical hole 101 and the second vertical hole 102 of the light shield wall 100. and the third vertical hole 103, and are in contact with the inner wall of the light shield wall 100 and are isolated from each other. In addition, the first, second, and third wavelength conversion units 220, 320, and 420, and the transparent semiconductor growth substrates 211 of the first, second, and third LED chips 210, 310, and 310. 311 and 411 are also accommodated inside each of the first vertical hole 101, the second vertical hole 102, and the third vertical hole 103 of the light shield wall 100, and are located inside the light shield wall 100. They are in contact with the wall and are isolated from each other. Therefore, the red light, green light, and blue light of each of the first unit light emitter 200, the second unit light emitter 300, and the third unit light emitter 400 are transmitted through the light shield wall 100 without the use of a complicated package structure or partition. ) can be released without mixing. The light shield wall 100 may be formed by a black colored body as will be described below.

As mentioned before, at least a portion of the side surface of the transparent semiconductor growth substrate 211, 311, 411 is in contact with the inner surface of the light shield wall 100, and the first conductive semiconductor layer 212, 312, 412 ), the active layers 213, 313, 413, and the second conductive semiconductor layers 214, 314, 414 are preferably exposed to the outside without contacting the light shield wall 100. At least a portion of the first conductive semiconductor layers 212, 312, 412, the active layers 213, 313, 413, and the second conductive semiconductor layers 214, 314, 414 are outside the light shield wall 100. By being exposed, light loss due to light absorption by the light shield wall 100 can be minimized.

Meanwhile, for uniform distribution of light, the upper surfaces of the first color filter 230, the second color filter 330, and the third color filter 430 are on the same level as the upper surface of the light shield wall. This is desirable, and this can be easily and simply achieved by the LED pixel unit manufacturing method described in detail below. In addition, the first wavelength converter 220, the second wavelength converter 320, and the third wavelength converter 420 are also preferably on the same level for uniform light distribution. Additionally, this can be easily and simply achieved by the LED pixel unit manufacturing method described in detail below.

As mentioned before, the first LED chip 210, the second LED chip 310, and the third LED chip 410 are preferably blue LED chips that emit blue light with a wavelength of 400 to 480 nm depending on the application of power. It is preferable that the first wavelength conversion unit 220, the second wavelength conversion unit 320, and the third wavelength conversion unit 420 are yellow phosphors. In addition, the first color filter 230, the second color filter 330, and the third color filter 430 are red, green, and blue filters that separate red light from white light and emit red light. desirable. The first unit light emitter 200, the second unit light emitter 300, and the third unit light emitter 400 are the same LED chips (210, 310, 410) grown through the same process on the same substrate. , the wavelength converters (220, 320, 420) are identical wavelength converters obtained by separating them from one large wavelength converter, so they are identical to each other before the first, second, and second color filters (230, 330, 430). Although white light is generated, light of specific wavelengths, that is, red light, green light, and blue light, can be separated and emitted by the first, second, and second color filters 230, 330, and 430.

Meanwhile, the LED pixel unit 1 manufactured as described above is arranged in a matrix on a predetermined substrate as shown in FIG. 4 along with the same LED pixel units manufactured through the same process. At this time, the unit light emitters of each LED pixel unit are connected to the first conductive electrode pad and the second conductive electrode pad provided on the pad formation surface of each LED chip, the electrodes provided on the LED chip individual driving substrate, and the solder bump. Flip chip bonding is done by

Now, a method of manufacturing the above-described LED pixel unit will be described with reference to FIGS. 4 to 8.

Figure 4 is a diagram for explaining the LED pixel unit manufacturing method according to the present invention, and Figure 5 is a diagram specifically explaining the first, second and third unit light emitter manufacturing steps of the LED pixel unit manufacturing method shown in Figure 4. FIG. 6 is a diagram for explaining the manufacturing step of the color filter array film and the wavelength conversion unit in the first, second, and third unit light emitting unit manufacturing steps, and FIG. 7 is a diagram for explaining the first, second, and third unit light emitting unit manufacturing steps. This is a diagram for explaining the step of manufacturing an LED wafer in the third unit light emitter manufacturing step, and FIG. 8 is a diagram for explaining another example of the step for manufacturing an LED wafer.

First, referring to FIG. 4, the LED pixel unit manufacturing method according to the present invention includes manufacturing a first unit light emitter 200, a second unit light emitter 300, and a third unit light emitter 400 (see FIG. 5). and the first unit light emitting body 200, the second unit light emitting body 300, and the third unit light emitting body 400 are spaced apart, and the first unit light emitting body 200, the second unit light emitting body 300, and The first unit light emitter 200 and the second unit are spaced apart from each other such that the first group G1, second group G2, and third group G3 each including the third unit light emitter 400 are spaced apart from each other. Arraying the light emitter 300 and the third unit light emitter 400, between the first unit light emitter 200, the second unit light emitter 300 and the third unit light emitter 400 and the first group (G1), forming a plate-shaped light shield wall 100 filling between the second group (G2) and the third group (G3), and forming a plate-shaped light shield wall 100 between the first group (G1) and the second group (G2) ), cutting the light shield wall 100 to separate the third group G3 and the fourth group G4. By cutting the light shield wall 100, a plurality of LED pixel units 1 corresponding to each group are manufactured.

The steps of manufacturing the first unit light emitter 200, the second unit light emitter 300, and the third unit light emitter 400 will be described in more detail next with reference to FIG. 5. The step of arranging the first unit light emitter 200, the second unit light emitter 300, and the third unit light emitter 400 includes forming the first unit light emitter 200 on a flat surface of the array support substrate SS. , the second unit light emitter 300 and the third unit light emitter 400 are arrayed. The first unit light emitter 200, the second unit light emitter 300, and the third unit light emitter 400 arranged on the array support substrate SS have a full height, and the first, second, and third LEDs. The height between the chips, the height between the first, second, and third wavelength conversion units, and the height between the first, second, and third color filters are all the same.

The step of forming the light shield wall 100 includes between the first unit light emitter 200, the second unit light emitter 300, and the third unit light emitter 400 arrayed on the support substrate SS, A black colored body material is filled between the groups (G1, G2, and G3) including these and then solidified to form a black colored light shield wall 100. The square vertical holes formed in the light shield wall 100 are vertical holes in an open vertical direction that are naturally formed by entirely surrounding the side surfaces of the unit light emitting bodies 200, 300, and 400, which have an approximately rectangular parallelepiped shape.

The step of cutting the light shield wall 100 does not cut the light shield wall 100 between unit light emitters in one group, but cuts the light shield wall 100 between neighboring groups, so that one group ( An LED pixel unit 1 in which light interference between the first, second and third unit illuminators 200, 300, 400 in G1, G2 or G3) is completely blocked by the light shield wall 100 is obtained. You can. The step of cutting the light shield wall 100 is preferably performed by a sawing process using a blade (B).

Referring again to FIG. 2, in each LED pixel unit 1, the first unit light emitter 200, the second unit light emitter 300, and the third unit light emitter 400 each have an electrode pad formation surface and A first LED chip 210, a second LED chip 310, and a third LED chip 410 including a light-emitting surface facing the electrode pad formation surface, the first LED chip 210, and the third LED chip 410. 2 A first wavelength conversion unit 220, a second wavelength conversion unit 320, and a third wavelength conversion unit 420 formed on the light emitting surface of the LED chip 310 and the third LED chip 410, and , a first color filter 230, a second color filter 330 stacked on the first wavelength converter 220, the second wavelength converter 320, and the third wavelength converter 420, and Includes a third color filter 430.

As previously described, the first LED chip 210, the second LED chip 310, and the third LED chip 410 emit blue light of the same wavelength, and the first wavelength conversion unit 220 , the second wavelength conversion unit 320 and the third wavelength conversion unit 420 convert the blue light to a wavelength and create white light by mixing the wavelength-converted light with the non-wavelength light, and the first color filter 230 , the second color filter 330 and the third color filter 430 separate and emit light of different wavelengths from the white light.

Next, the above-described first, second, and third unit light emitting unit manufacturing steps will be described with reference to FIG. 5.

As well shown in FIG. 5, the first, second, and third unit light emitter manufacturing steps include forming a first color filter 230, a second color filter 330, and a third color filter on a temporary substrate (TS). (430) forming a two-dimensionally continuous and repetitive color filter array film (FM), and covering the entire upper surface of the color filter array film (FM) on the color filter array film (FM). Forming a wavelength conversion unit (WM), forming a laminated film of the color filter array film (FM) and the wavelength conversion unit (WM), an electrode pad formation surface and a light emitting surface opposing the electrode pad formation surface. manufacturing an LED wafer (LW) including a step of manufacturing a light emitter plate (LP) by stacking the laminated film on the LED wafer (LW) so that the wavelength conversion unit (WM) is in contact with the light emitting surface. and a first unit luminous body 200 including the first LED chip 210, the first wavelength conversion unit 220, and a first color filter 230 from the luminous plate LP, and the second unit luminous body 200. A second unit light emitter 300 including an LED chip 310, the second wavelength conversion unit 320, and the second color filter 330, the third LED chip 410, and the third wavelength conversion and cutting the light emitter plate LP to separate the third unit light emitter 400 including the portion 420 and the third color filter 430. The step of cutting the light emitter plate (LP) uses a dicing process using a diamond blade (DB).

The first LED chip 210, the second LED chip 310, and the third LED chip 410 are formed from one large LED wafer (LW) by cutting the light emitter plate (LP). Since they are formed by separating them into several pieces, their emission characteristics, such as wavelength, are the same, and their heights are also the same. In addition, the first wavelength conversion unit 220, the second wavelength conversion unit 320, and the third wavelength conversion unit 420 are formed into one large wavelength conversion unit by cutting the luminous plate LP. Since it is formed by dividing it into several parts from (WM), the wavelength conversion characteristics are the same and the height is also the same. The heights of the first color filter 230, the second color filter 330, and the third color filter 430 all follow the thickness of the color filter array film and are therefore the same.

The first unit light emitter 200, the second unit light emitter 300, and the fourth unit light emitter 400 manufactured as described above are used to manufacture an LED pixel unit as described above with reference to FIG. 4.

Meanwhile, the process of stacking the color filter array film (FM) and the wavelength conversion unit (WM) in the above-described first, second, and third unit light emitter manufacturing steps will be described in more detail with reference to FIG. 6 as follows. Same as

Referring to FIG. 6, the step of forming the color filter array film involves forming the first color filter 230 at each of several locations on the temporary substrate TS using the 3D shadow mask SD1 for the first color filter. and, using a 3D shadow mask (SD2) for a second color filter, several locations on the temporary substrate (TS) avoiding the first color filter 230 and continuous with the first color filter 230. forming a second color filter 330 and using a 3D shadow mask (SD3) for a third color filter to avoid the first color filter 230 and the second color filter 330; and It includes forming a third color filter 430 at several locations on the temporary substrate TS in series with the second color filter 330. In addition, the step of forming the wavelength conversion unit includes the entire upper surface of the color filter array film (FM) including the first color filter 230, the second color filter 330, and the third color filter 430. A wavelength conversion part (WM) of uniform thickness is formed to cover the surface. A 3D shadow mask (SD4) for forming the wavelength conversion part (SD4) can be used to form the wavelength conversion part (WM). For example, a material containing a wavelength conversion phosphor or quantum dot is placed on the color filter array film (FM) to a uniform thickness through a 3D shadow mask (SD4).

Figure 7 shows an example of the steps of manufacturing an LED wafer used to manufacture the first, second, and third unit light emitters.

Referring to FIG. 7, in the step of manufacturing the LED wafer, a sapphire wafer 11 suitable for growing a gallium nitride-based compound semiconductor layer is first prepared. Next, a first conductive semiconductor layer 12, an active layer 13, and a second conductive semiconductor layer 14, which are gallium nitride-based compound semiconductor layers, are sequentially grown on the upper surface of the sapphire wafer 11. Next, the second conductive semiconductor layer 14 and the active layer 13 are etched away to a certain depth in a plurality of regions on the upper surface of the second conductive semiconductor layer 14 to form the first conductive semiconductor layer 12. ) is exposed in several areas. A first conductive electrode pad E1 is formed in each of these exposed areas. Additionally, a second conductive type electrode pad (E2) paired with the first conductive type electrode pad (E1) is formed on the second conductive type semiconductor layer 14. One side of the LED wafer has a step formed by etching to expose the first conductive semiconductor 12 in several areas, and one side of the LED wafer on which the first and second conductive electrode pads E1 and E2 are formed is the electrode pad formation surface described in detail above. , and the opposite surface, that is, the lower surface of the sapphire wafer 11, becomes the light-emitting surface on which the wavelength conversion unit is laminated.

Referring again to FIG. 5, the wavelength conversion unit (WM) and the filter array film (WM) are in direct contact with the lower surface of the sapphire wafer 11 of the LED wafer (LW) manufactured as described above. A laminated film composed of FM) is laminated. And, the light emitter plate made by laminating the wavelength conversion unit (WM) and the filter array film (FM) on the LED wafer (LW) is cut as described above to form the first unit light emitter 200 and the second unit light emitter 300. ) and the third unit light emitting body 300, and each of the first unit light emitting body 200, the second unit light emitting body 300, and the third unit light emitting body 400, which are the results of the cutting, is the first unit light emitting body 300. It includes one of the first color filter 230, the second color filter 330, and the third color filter 430, and one electrode pad pair (E1, E2) among a plurality of electrode pad pairs.

Another example of the step of manufacturing an LED wafer is described in Figure 8 as follows.

Like the LED wafer manufacturing step described above, in the LED wafer manufacturing step of this example, a first conductive semiconductor layer 12, an active layer 13, and a second conductive semiconductor layer, which are gallium nitride-based compound semiconductor layers, are placed on the upper surface of the sapphire wafer 11. The semiconductor layers 14 are grown sequentially. Also, as in the previous example, the second conductive semiconductor layer 14 and the active layer 13 are etched away to a certain depth in a plurality of regions on the upper surface of the second conductive semiconductor layer 14, thereby forming the first conductive semiconductor layer 14. The type semiconductor layer 12 is exposed in several areas. Next, the first conductive semiconductor layer 12 is exposed on one surface of the LED wafer including the exposed area of the first conductive semiconductor layer 12 and the exposed surface of the second conductive semiconductor layer 12. An electrode formation support substrate (ES) is formed including a first conductive portion (VA) and a first conductive portion (VB) that are individually connected to the region and the second conductive semiconductor layer 12. Next, the sapphire wafer 11 is separated and removed. In this case, the laminated film including the wavelength conversion unit (WM) and the filter array film (FM) is formed so that the wavelength conversion unit (WM) is in contact with the rear surface of the first conductive semiconductor layer 11 from which the sapphire wafer 11 has been removed. Lamination takes place.

1.................................LED pixel unit
100............................................Light shield wall
200.......................................First unit illuminant
300...................................Second unit illuminant
400...................................Third unit illuminant
210, 310, 410............................LED chip
220, 320, 420................................Wavelength conversion unit
230, 330, 430.................................Color filter

Claims (16)

A light shield wall having a first hole, a second hole, and a third hole extending from the upper surface to the lower surface;
a first unit light emitting body disposed to fill the first hole;
a second unit light emitting body disposed to fill the second hole; and
It includes a third unit light emitting body disposed to fill the third hole,
The first unit light emitter, the second unit light emitter, and the third unit light emitter include a first color filter, a second color filter, and A third color filter, a first LED chip, a second LED chip, and a third LED chip located below each of the first color filter, the second color filter, and the third color filter, and each of the first LED chips A first wavelength conversion unit and a second wavelength conversion unit located between the color filter and the first LED chip, between the second color filter and the second LED chip, and between the third color filter and the third LED chip. and a third wavelength converter, wherein the first LED chip, the second LED chip, and the third LED chip emit light of the same wavelength, and the first wavelength converter, the second wavelength converter, and the third LED chip emit light of the same wavelength. 3 The wavelength converter converts light of the same wavelength received from the first LED chip, the second LED chip, and the third LED chip into white light, and the first color filter, the second color filter, and the third color filter Characterized by separating and emitting light of a first wavelength, a second wavelength, and a third wavelength from the white light,
Each of the first wavelength converter, the second wavelength converter, and the third wavelength converter is accommodated inside each of the first hole, the second hole, and the third hole, and is connected to the inner wall of the light shield wall and the third wavelength converter. LED pixel units in contact and isolated from each other. The method according to claim 1, wherein the first LED chip, the second LED chip, and the third LED chip each have a light emitting surface in contact with the first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit. And, an LED pixel unit comprising a pad formation surface that faces the light emission surface and is exposed to the outside. The method according to claim 2, wherein a first conductive electrode pad and a second conductive electrode pad are provided on the pad formation surface, and the first conductive electrode pad and the second conductive electrode pad are below the lower surface of the light shield wall. An LED pixel unit that protrudes to form a flip type. The LED pixel unit according to claim 1, wherein upper surfaces of the first color filter, the second color filter, and the third color filter are on the same level as the upper surface of the light shield wall. The LED pixel unit according to claim 1, wherein the first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit form the same height. The method according to claim 1, wherein the first LED chip, the second LED chip, and the third LED chip are blue LED chips that emit blue light with a wavelength of 400 to 480 nm depending on the application of power, and the first wavelength conversion unit and the second An LED pixel unit, wherein the wavelength conversion unit and the third wavelength conversion unit are yellow phosphors. The LED pixel unit of claim 1, wherein the first hole, the second hole, and the third hole form a vertical or inclined hole. The LED pixel unit of claim 1, wherein the first color filter, the second color filter, and the third color filter are a red filter, a green filter, and a blue filter that separate red light, green light, and red light from white light. . The LED pixel unit according to claim 1, wherein each of the first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit is formed by mixing two or more phosphors including a green phosphor and a red phosphor. . The method according to claim 3, wherein the first LED chip, the second LED chip, and the third LED chip each have a first conductive type semiconductor layer including the light emission surface and a second conductive type semiconductor layer including the pad formation surface. An LED pixel unit comprising a semiconductor layer and an active layer formed between the first conductive semiconductor layer and the second conductive semiconductor layer. The method according to claim 3, wherein the first LED chip, the second LED chip, and the third LED chip each include a transparent semiconductor growth substrate including the light-emitting surface, and a first conductive semiconductor grown on the transparent semiconductor growth substrate. An LED pixel unit comprising a layer, an active layer, and a second conductivity type semiconductor layer. The method of claim 11, wherein at least a portion of a side surface of the transparent semiconductor growth substrate is in contact with an inner surface of the optical shield wall, and at least one of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer has a side surface that is adjacent to the optical shield wall. An LED pixel unit that is exposed to the outside without contact with the wall. First unit illuminant. a second unit light emitter and a third unit light emitter;
Between the first unit light emitting body and the second unit light emitting body, between the second unit light emitting body and the third unit light emitting body, and surrounding the outer surfaces of the first unit light emitting body, the second unit light emitting body, and the third unit light emitting body. It includes a light shield wall formed,
The first unit light emitter, the second unit light emitter, and the third unit light emitter each include a first LED chip, a second LED chip, and a third unit light emitter including an electrode pad formation surface and a light emission surface opposing the electrode pad formation surface. An LED chip, a first wavelength converter, a second wavelength converter, and a third wavelength converter formed on the light emitting surfaces of the first LED chip, the second LED chip, and the third LED chip, respectively, and It includes a first color filter, a second color filter, and a third color filter formed on the first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit, respectively,
The first LED chip, the second LED chip, and the third LED chip emit light of the same wavelength, and the first wavelength converter, the second wavelength converter, and the third wavelength converter emit light of the same wavelength. converting the white light into white light, wherein the first color filter, the second color filter, and the third color filter separate the white light into light of different wavelengths and emit it;
The first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit each are in contact with an inner wall of the light shield wall and are isolated from each other. The method according to claim 13, wherein a first conductive type electrode pad and a second conductive type electrode pad are provided on the electrode pad formation surface, and the first conductive type electrode pad and the second conductive type electrode pad are on the lower surface of the light shield wall. An LED pixel unit characterized by protruding downward. The LED pixel unit of claim 13, wherein upper surfaces of the first color filter, the second color filter, and the third color filter are on the same level as the upper surface of the light shield wall. The LED pixel unit of claim 13, wherein the first wavelength conversion unit, the second wavelength conversion unit, and the third wavelength conversion unit form the same height.

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