CN109668062A - Light-emitting diode area source structure - Google Patents

Light-emitting diode area source structure Download PDF

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Publication number
CN109668062A
CN109668062A CN201811510488.7A CN201811510488A CN109668062A CN 109668062 A CN109668062 A CN 109668062A CN 201811510488 A CN201811510488 A CN 201811510488A CN 109668062 A CN109668062 A CN 109668062A
Authority
CN
China
Prior art keywords
light
isolation
emitting diode
area source
height
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811510488.7A
Other languages
Chinese (zh)
Inventor
黄文孝
林荣松
黄达人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interface Optoelectronics Shenzhen Co Ltd
Cheng Cheng Technology Chengdu Co Ltd
General Interface Solution Ltd
Original Assignee
Interface Optoelectronics Shenzhen Co Ltd
Cheng Cheng Technology Chengdu Co Ltd
General Interface Solution Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interface Optoelectronics Shenzhen Co Ltd, Cheng Cheng Technology Chengdu Co Ltd, General Interface Solution Ltd filed Critical Interface Optoelectronics Shenzhen Co Ltd
Priority to CN201811510488.7A priority Critical patent/CN109668062A/en
Priority to TW107144754A priority patent/TWI676302B/en
Publication of CN109668062A publication Critical patent/CN109668062A/en
Pending legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/238—Arrangement or mounting of circuit elements integrated in the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
    • F21K9/69—Details of refractors forming part of the light source
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]

Abstract

The invention discloses a kind of light-emitting diode area source structures, it includes: a circuit board, one light-emitting diodes volume array, it is set on the circuit board, with a plurality of light-emitting diodes body units, one first separation layer, completely cover the light-emitting diodes volume array, and there is one first isolation height and one first isolation thickness, one luminescent conversion layer, completely cover first separation layer, and there is a luminescent conversion layer height and a luminescent conversion layer thickness, and one second separation layer, completely cover the luminescent conversion layer, and there is one second isolation height, one second isolation thickness and a surface micro-structure.

Description

Light-emitting diode area source structure
Technical field
The present invention relates to a kind of straight-down negative light-emitting diode area source structures.
Background technique
Light-emitting diode area source structure can be divided into side-light type and two kinds of straight-down negative according to luminous dipolar object light source position, preceding Person mostly suitable for small-sized display panel, such as: monitor or laptop, the latter mostly suitable for larger display panels, Such as: LCD screen.The present invention mainly discloses a kind of light-emitting diode area source structure suitable for straight-down negative, however, now Straight-down negative light-emitting diode area source structure is broadly divided into coating encapsulation and two kinds of encapsulation patterns of thin-film package, hereinafter by needle Advantage and disadvantage comparison is carried out to this two kinds of packing forms.
Known light-emitting diode area source is coated with encapsulation, and first light-emitting diodes volume array is set on circuit board first, Then luminescent conversion layer is coated with and light-emitting diodes volume array is completely covered, wherein the material of the luminescent conversion layer can be selected from yttrium aluminium The fluorescent materials such as garnet (YAG), silicate or fluorination matter fluorescent powder, such packaged type encapsulation process is simple, and is packaged into This and light conversion efficiency are all higher than thin-film package mode, but LCD screen of arranging in pairs or groups is in use, its NTSC color gamut coverage rate only up to 80 ~85%.
Light-emitting diodes volume array, is set on circuit board first, connects by known light-emitting diode area source thin-film package The good luminescent conversion layer film of prior processing procedure is covered on light-emitting diodes volume array, wherein luminescent conversion layer film can be used Quantum dot fluorescence material also can be used in fluorescent material as described above, when using quantum dot fluorescent material, because of quantum dot fluorescence Material is easy by the image of temperature and humidity and then loses conversion efficacy, thus need to around luminescent conversion layer film again processing procedure one every Absciss layer is not damaged to protect quantum dot fluorescent material, such packaged type, because quantum dot fluorescence material can provide relatively narrow frequency Primitive color light (R/G/B), thus arrange in pairs or groups LCD screen in use, its NTSC color gamut coverage rate up to 100% or more, but in this area source Edge be but presented light leakage phenomena, need and increase chopping mechanism in this area source mechanism outside, it may thus be appreciated that thin-film package side Formula be easy to cause the waste of energy.
Therefore, it is intended to solve the problems, such as the packaged type of above-mentioned light-emitting diode now and missing, the present invention proposes a kind of new Structure design, using secondary millimeter light-emitting diode (Mini LED) in ultralow electric current (be less than 0.1mA) driving, light-emitting diode Array generates extremely low thermal characteristics, it is further proposed that this structure designs, but the present invention should not be limited only to this, also be applicable to shine Diode, secondary millimeter light-emitting diode (Mini LED) or miniature light-emitting diode (Micro LED).
Summary of the invention
The present invention proposes a kind of light-emitting diode area source structure, it includes: circuit board, light-emitting diodes volume array, setting In on the circuit board, having a plurality of light-emitting diodes body units, the first separation layer, light-emitting diodes volume array is completely covered, and have There are the first isolation height and the first isolation thickness, luminescent conversion layer, it is complete to cover the first separation layer, and have luminescent conversion layer high Degree and luminescent conversion layer thickness and the second separation layer completely cover luminescent conversion layer, and have the second isolation height, second Thickness and surface micro-structure is isolated.
Wherein the height of the first isolation height, the second isolation height and luminescent conversion layer height is defined as vertical with circuit board Direction, and the first isolation thickness, the second isolation thickness and the thickness of luminescent conversion layer thickness are defined as and circuit board level Direction.
Preferably, the first isolation thickness need to be greater than or equal to the first isolation height.
Preferably, the second isolation thickness need to be greater than or equal to the second isolation height.
Preferably, luminescent conversion layer thickness about equal (≒) is in the luminescent conversion layer height.
Preferably, surface micro-structure are prism, lens or cone structure etc., and penetrating anaclasis principle through this micro-structure can Further by the biggish light of the angle of diverging, its light path is corrected so that convergence is assembled, and then obtains the higher light source of luminous intensity.
Preferably, the refractive index of luminescent conversion layer are nq。
Preferably, the first separation layer and the second separation layer can be stacked by least one layer of sub- separation layer and be formed, however, the son every Its refractive index is sequentially n to absciss layer from inside to outside1、n2、n3、…、nN, wherein N is natural number, 1≤n of Ying Fuhe1≦n2≦n3≦… ≦nN≦nq。
The luminous energy of light-emitting diode can be more made full use of through said structure design and promotes the conversion ratio of light, and reduces leakage Optical phenomenon avoids the waste of light energy.
Detailed description of the invention
Fig. 1 is the schematic diagram of light-emitting diode of embodiment of the present invention area source structure.
Fig. 2 (a), Fig. 2 (b) and Fig. 2 (c) are that the surface of another embodiment of the present invention light-emitting diode area source structure is micro- The schematic diagram of structure.
Fig. 3 is the schematic diagram of another embodiment of the present invention light-emitting diode area source structure.
Appended drawing reference:
100,200,300: circuit board 110,210,310: light-emitting diodes volume array
120,220,320: luminescent conversion layer 130a, 230a, 330a: the first separation layer
130b, 230b, 330a: the second separation layer 240: surface micro-structure
331a ..., the 33Na: the first sub- separation layer 331b ..., the 33Nb: the second sub- separation layer
Specific embodiment
To reach above-mentioned purpose and effect, the technical means and structures that the present invention uses, the just present invention that hereby draws are implemented Its feature and function of example elaborate, can exaggerate the size of coating and range, understand completely in order to sharp, it will be appreciated that, this etc. Content is not enough at restriction of the invention.
With reference to Fig. 1, for according to the schematic diagram of light-emitting diode area source structure of the embodiment of the present invention, light-emitting diodes dignity light Source structure can sequentially include circuit board 100, light-emitting diodes volume array 110, the first separation layer 130a, luminescent conversion layer 120 and Two separation layer 130b.Light-emitting diodes volume array 110 is set on circuit board 100, circuit board 100 and the first separation layer 130a it Between, and coated completely by the first separation layer 130a；Luminescent conversion layer 120 is set on the first separation layer 130a, the first isolation Between layer 130a and the second separation layer 130b, wherein the second separation layer 130b is set on luminescent conversion layer 120 and is completely covered Luminescent conversion layer 120 is sandwiched between the first separation layer 130a and the second separation layer 130b by by luminescent conversion layer 120 to protect Influence of the luminescent conversion layer 120 from temperature and humidity.
The present invention may be configured as a plate body such as plane plate or bendable plate body etc., and the present embodiment is done with planar configuration It is described in detail, but not equal to limitation spirit of that invention and scope.Light-emitting diodes volume array 110 is uniformly arranged on circuit board first On 100, then the first separation layer 130a is coated with and is stacked on light-emitting diodes volume array 110 and is completely covered, this first every Absciss layer 130a has the first isolation height haThickness s is isolated with firsta, then by 120 even spread of luminescent conversion layer and it is stacked to It on first separation layer 130a and is completely covered, this luminescent conversion layer 120 has luminescent conversion layer height hqWith luminescent conversion thickness Spend sq, wherein luminescent conversion layer 120 can be selected from yttrium-aluminium-garnet (YAG), silicate, fluorination matter fluorescent powder or quantum dot fluorescence The fluorescent materials such as powder finally by the second separation layer 130b even spread and are stacked on luminescent conversion layer 120 and are completely covered, this Second separation layer 130b has the second isolation height hbThickness s is isolated with secondb, wherein the isolation of the first separation layer 130a and second The material of transparent or haze (Haze) can be used in layer 130b.As described above, mode, which is made, to be applied with slot coated, bar The modes such as cloth, immersion coating or rotary coating shape.
First isolation height haIt is defined as connecing from 100 surface of circuit board to the first separation layer 130a with luminescent conversion layer 120 The vertical height of contacting surface, luminescent conversion layer height hqBe defined as from the first separation layer 130a and 120 contact surface of luminescent conversion layer to The vertical height of luminescent conversion layer 120 and the second separation layer 130b contact surface, and the second isolation height hbIt is defined as luminescent conversion The vertical height of the top surface of layer 120 and the second separation layer 130b contact surface to the second separation layer 130b.
First isolation thickness saBe defined as from 110 edge side of light-emitting diodes volume array at edge to the first separation layer 130a with The horizontal breadth of 120 contact surface of luminescent conversion layer, luminescent conversion layer thickness sqIt is defined as from the first separation layer 130a and illuminating rotary Change 120 contact surface of layer to luminescent conversion layer 120 and the second separation layer 130b contact surface horizontal breadth, and second isolation thickness sb Be defined as luminescent conversion layer 120 and the second separation layer 130b contact surface to the second separation layer 130b edge side horizontal breadth.
First isolation thickness saThe first isolation height h need to be greater than or equal toa, and the second isolation thickness sbIt need to be greater than or equal to Second isolation height hb, main purpose is the edge optically focused or excessively bright for preventing area source.Luminescent conversion layer thickness sqIt need to about wait In (≒) luminescent conversion layer height hq, to prevent luminescent conversion layer 120 from being influenced by temperature and humidity, the first isolation height haWith Second isolation height hb30 μm, which need to be greater than, just has isolation effect, however the height of the first separation layer 130a and the second separation layer 130b Spend (ha、hb) or thickness (sa、sb) its thinner penetrance is better.
It is the table of another embodiment of the present invention light-emitting diode area source structure with reference to Fig. 2 (a), Fig. 2 (b) and Fig. 2 (c) The schematic diagram of face micro-structure 240.The feature such as above-described embodiment is held, the present embodiment is further in the top table of the second separation layer 230b An at least surface projection is processed as on face, surface projection can be for such as: prism, lens or cone surface micro-structure 240, or The combination of above structure to correct light path so that light restrains the effect of aggregation, and then is obtained by this surface micro-structure 240 The higher light source of luminous intensity, wherein its arrangement mode of surface micro-structure 240 of the invention can be regularly arranged or random random number Arrangement.It should be understood that the diagram of the embodiment of the present invention is only to enable fields to have usual skill this is more clearly understood The spirit and scope of invention, should not be limited only to this.
The present invention proposes another embodiment, according to Fresnel's equation (fresnel equation) when angle of light approaches When zero, the penetrance of light meets 4n1n2/(n1+n2)2× 100%, such as: light is incident to glass from air (refractive index 1) Glass (refractive index is about 1.5), according to Fresnel's equation 4 × 1 × 1.5/ (1+1.5)2× 100%=96% can obtain its penetrance It is 96%, if the film that a refractive index is 1.2 is coated in glass outer layer, according to 4 × 1 × 1.2/ (1+ of Fresnel's equation 1.2)2×4×1.2×1.5/(1.2+1.5)2The final penetrance that × 100% ≒ 98% can be obtained is 98%, therefore it follows that is applied One film of cloth can effectively promote the effect of penetrance in outer layer.
In summary, to promote light conversion efficiency, promotion light transmittance is necessary project, with further reference to Fig. 3, for this The schematic diagram for inventing another embodiment light-emitting diode area source structure, holds the feature such as above-described embodiment, and the of the present embodiment One separation layer 330a and the second separation layer 330b can be stacked further by least one sub- separation layer and be formed.As shown in figure, first every Absciss layer 330a includes at least one first sub- separation layer and from inside to outside to be sequentially 331a, 332a ..., 33Na, and the second separation layer 330b is comprising at least one second sub- separation layer and from inside to outside to be sequentially 331b, 332b ..., 33Nb, and wherein N is natural number.
To promote light conversion efficiency, when its refractive index of luminescent conversion layer 320 is nqWhen, the first sub- separation layer 331a, 332a ..., 33Na and second sub- separation layer 331b, 332b ..., 33Nb its refractive index are sequentially n1、n2、n3、…、nN, wherein N be Natural number, and refractive index has to comply with 1≤n1≦n2≦n3≦…≦nN≦nq.It is designed by this structure, may make more luminous energy Amount penetrates luminescent conversion layer 320 and then promotes the luminous efficiency of light-emitting diode area source.
Through above-mentioned detailed description, the purpose and efficacy of the present invention can be sufficiently shown, the foregoing is merely clear theorys Bright spirit and scope of the invention, not limitation is of the invention, therefore those skilled in the art should be understood that all apply to Description of the invention and the made equivalent replacement of diagramatic content and obvious variation, are all contained in protection scope of the present invention It is interior.

Claims (10)

1. a kind of light-emitting diode area source structure, characterized by comprising:
One circuit board；
One light-emitting diodes volume array, is set on the circuit board, has a plurality of light-emitting diodes body units；
One first separation layer completely covers the light-emitting diodes volume array, and has one first isolation height and one first isolation thick Degree；
One luminescent conversion layer completely covers first separation layer, and has a luminescent conversion layer height and a luminescent conversion thickness Degree；And
One second separation layer completely covers the luminescent conversion layer, and has one second isolation height, one second isolation thickness and one Surface micro-structure.
2. light-emitting diode area source structure as described in claim 1, wherein first isolation height, second isolation height And the height of the luminescent conversion layer height is defined as the direction vertical with the circuit board, and the first isolation thickness, this second every Thickness from thickness and the luminescent conversion layer thickness is defined as the direction with the circuit board level.
3. light-emitting diode area source structure as claimed in claim 2, wherein the first isolation thickness, which need to be greater than or equal to, is somebody's turn to do First isolation height.
4. light-emitting diode area source structure as claimed in claim 2, wherein the second isolation thickness, which need to be greater than or equal to, is somebody's turn to do Second isolation height.
5. light-emitting diode area source structure as claimed in claim 2, wherein the luminescent conversion layer thickness is equal to the illuminating rotary Change layer height.
6. light-emitting diode area source structure as described in claim 1, wherein the surface micro-structure is surface projection, to Light path is corrected so that the effect that light convergence is assembled.
7. light-emitting diode area source structure as described in claim 1, wherein the refractive index of the luminescent conversion layer is nq。
8. light-emitting diode area source structure as claimed in claim 2, wherein first separation layer by least one first son every Absciss layer stacks to be formed.
9. light-emitting diode area source structure as claimed in claim 2, wherein second separation layer by least one second son every Absciss layer stacks to be formed.
10. the light-emitting diode area source structure as described in claim 8 or the 9th, wherein the sub- separation layer from inside to outside its Refractive index is sequentially n1、n2、n3、…、nN, wherein N is natural number, and meets 1≤n1≦n2≦n3≦…≦nN≦nq。
CN201811510488.7A 2018-12-11 2018-12-11 Light-emitting diode area source structure Pending CN109668062A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201811510488.7A CN109668062A (en) 2018-12-11 2018-12-11 Light-emitting diode area source structure
TW107144754A TWI676302B (en) 2018-12-11 2018-12-12 Surface light source structure of light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811510488.7A CN109668062A (en) 2018-12-11 2018-12-11 Light-emitting diode area source structure

Publications (1)

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CN109668062A true CN109668062A (en) 2019-04-23

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TW (1) TWI676302B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112578598A (en) * 2020-12-14 2021-03-30 业成科技（成都）有限公司 Direct type backlight device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102047452A (en) * 2008-05-30 2011-05-04 夏普株式会社 Light emitting device, planar light source, liquid crystal display device and method for manufacturing light emitting device
TW201238088A (en) * 2011-03-07 2012-09-16 Advanced Optoelectronic Tech Light emitting diode package and method for making it
US20150008463A1 (en) * 2013-07-03 2015-01-08 Nichia Corporation Fluoride phosphor and light emitting device using the same and method of manufacturing the fluoride phosphor
CN105895641A (en) * 2015-02-13 2016-08-24 台医光电科技股份有限公司 Optical sensing module, optical sensing accessory, and optical sensing device
CN106463584A (en) * 2014-03-18 2017-02-22 通用电气照明解决方案有限责任公司 Heavily phosphor loaded led package
CN107706281A (en) * 2016-08-09 2018-02-16 行家光电股份有限公司 Has the wafer-class encapsulation light-emitting device of moisture barrier structure

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111464B2 (en) * 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
WO2017116136A1 (en) * 2015-12-31 2017-07-06 서울반도체주식회사 Display device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102047452A (en) * 2008-05-30 2011-05-04 夏普株式会社 Light emitting device, planar light source, liquid crystal display device and method for manufacturing light emitting device
TW201238088A (en) * 2011-03-07 2012-09-16 Advanced Optoelectronic Tech Light emitting diode package and method for making it
US20150008463A1 (en) * 2013-07-03 2015-01-08 Nichia Corporation Fluoride phosphor and light emitting device using the same and method of manufacturing the fluoride phosphor
CN106463584A (en) * 2014-03-18 2017-02-22 通用电气照明解决方案有限责任公司 Heavily phosphor loaded led package
CN105895641A (en) * 2015-02-13 2016-08-24 台医光电科技股份有限公司 Optical sensing module, optical sensing accessory, and optical sensing device
CN107706281A (en) * 2016-08-09 2018-02-16 行家光电股份有限公司 Has the wafer-class encapsulation light-emitting device of moisture barrier structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112578598A (en) * 2020-12-14 2021-03-30 业成科技（成都）有限公司 Direct type backlight device
CN112578598B (en) * 2020-12-14 2022-10-18 业成科技（成都）有限公司 Direct type backlight device

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TWI676302B (en) 2019-11-01

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