WO2014201822A1 - 阵列基板、显示装置及阵列基板的修复方法 - Google Patents
阵列基板、显示装置及阵列基板的修复方法 Download PDFInfo
- Publication number
- WO2014201822A1 WO2014201822A1 PCT/CN2013/089450 CN2013089450W WO2014201822A1 WO 2014201822 A1 WO2014201822 A1 WO 2014201822A1 CN 2013089450 W CN2013089450 W CN 2013089450W WO 2014201822 A1 WO2014201822 A1 WO 2014201822A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- repair
- line
- array substrate
- common
- peripheral circuit
- Prior art date
Links
- 230000008439 repair process Effects 0.000 title claims abstract description 133
- 239000000758 substrate Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 13
- 230000002093 peripheral effect Effects 0.000 claims abstract description 79
- 238000003466 welding Methods 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 230000004927 fusion Effects 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/355,327 US9335596B2 (en) | 2013-06-20 | 2013-12-14 | Array substrate, display device, and repair method for the array substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310246883.XA CN103353679B (zh) | 2013-06-20 | 2013-06-20 | 一种阵列基板、显示装置及阵列基板的修复方法 |
CN201310246883.X | 2013-06-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014201822A1 true WO2014201822A1 (zh) | 2014-12-24 |
Family
ID=49310065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2013/089450 WO2014201822A1 (zh) | 2013-06-20 | 2013-12-14 | 阵列基板、显示装置及阵列基板的修复方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9335596B2 (zh) |
CN (1) | CN103353679B (zh) |
WO (1) | WO2014201822A1 (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103353679B (zh) * | 2013-06-20 | 2015-08-26 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板的修复方法 |
CN104375347B (zh) * | 2014-12-04 | 2017-06-06 | 合肥鑫晟光电科技有限公司 | 阵列基板、修补片、显示面板和修复阵列基板的方法 |
CN105446036B (zh) * | 2015-12-23 | 2018-10-09 | 南京中电熊猫液晶显示科技有限公司 | 一种液晶显示面板及其修复方法 |
CN105527736B (zh) * | 2016-02-15 | 2019-01-18 | 京东方科技集团股份有限公司 | 一种阵列基板及其修复方法、显示面板和显示装置 |
US11526232B2 (en) * | 2021-03-26 | 2022-12-13 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display module and display device |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030016326A1 (en) * | 2000-12-07 | 2003-01-23 | Kazuya Hashimoto | Liquid crystal display device having an auxiliary wiring |
CN101334536A (zh) * | 2007-06-28 | 2008-12-31 | 上海广电Nec液晶显示器有限公司 | 一种阵列基板上的修复线结构及其制造方法 |
CN101435925A (zh) * | 2007-11-13 | 2009-05-20 | 上海广电Nec液晶显示器有限公司 | 液晶显示面板及其修复方法 |
CN101435924A (zh) * | 2007-11-13 | 2009-05-20 | 上海广电Nec液晶显示器有限公司 | 液晶显示面板及其修复方法 |
CN102141710A (zh) * | 2009-12-31 | 2011-08-03 | 乐金显示有限公司 | 薄膜晶体管阵列基板、包括该基板的液晶显示器及制造该基板的方法 |
US20120319557A1 (en) * | 2010-02-19 | 2012-12-20 | Thales | Active Matrix Display with Integrated Repair Structure for Open Lines |
CN103034008A (zh) * | 2012-12-17 | 2013-04-10 | 京东方科技集团股份有限公司 | 液晶面板的防静电结构及其制造方法、连接线的修复方法 |
CN103353679A (zh) * | 2013-06-20 | 2013-10-16 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板的修复方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006206833A (ja) * | 2005-01-31 | 2006-08-10 | Toshiba Matsushita Display Technology Co Ltd | 異方導電性接着剤及びこれを用いた接続構造、接続方法 |
JP4560026B2 (ja) * | 2006-10-04 | 2010-10-13 | セイコーエプソン株式会社 | フレキシブル基板及びこれを備えた電気光学装置、並びに電子機器 |
JP5424738B2 (ja) * | 2009-06-23 | 2014-02-26 | キヤノン株式会社 | 表示装置 |
CN101930128B (zh) * | 2009-06-24 | 2013-09-18 | 上海天马微电子有限公司 | 线路修复结构及其修复方法 |
TWM410891U (en) * | 2010-10-27 | 2011-09-01 | Chunghwa Picture Tubes Ltd | Active device array substrate and liquid crystal display panel |
-
2013
- 2013-06-20 CN CN201310246883.XA patent/CN103353679B/zh active Active
- 2013-12-14 WO PCT/CN2013/089450 patent/WO2014201822A1/zh active Application Filing
- 2013-12-14 US US14/355,327 patent/US9335596B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030016326A1 (en) * | 2000-12-07 | 2003-01-23 | Kazuya Hashimoto | Liquid crystal display device having an auxiliary wiring |
CN101334536A (zh) * | 2007-06-28 | 2008-12-31 | 上海广电Nec液晶显示器有限公司 | 一种阵列基板上的修复线结构及其制造方法 |
CN101435925A (zh) * | 2007-11-13 | 2009-05-20 | 上海广电Nec液晶显示器有限公司 | 液晶显示面板及其修复方法 |
CN101435924A (zh) * | 2007-11-13 | 2009-05-20 | 上海广电Nec液晶显示器有限公司 | 液晶显示面板及其修复方法 |
CN102141710A (zh) * | 2009-12-31 | 2011-08-03 | 乐金显示有限公司 | 薄膜晶体管阵列基板、包括该基板的液晶显示器及制造该基板的方法 |
US20120319557A1 (en) * | 2010-02-19 | 2012-12-20 | Thales | Active Matrix Display with Integrated Repair Structure for Open Lines |
CN103034008A (zh) * | 2012-12-17 | 2013-04-10 | 京东方科技集团股份有限公司 | 液晶面板的防静电结构及其制造方法、连接线的修复方法 |
CN103353679A (zh) * | 2013-06-20 | 2013-10-16 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板的修复方法 |
Also Published As
Publication number | Publication date |
---|---|
US9335596B2 (en) | 2016-05-10 |
CN103353679A (zh) | 2013-10-16 |
US20150277198A1 (en) | 2015-10-01 |
CN103353679B (zh) | 2015-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2014187097A1 (zh) | 阵列基板、该阵列基板断线修复方法及显示装置 | |
CN103034008B (zh) | 液晶面板的防静电结构及其制造方法、连接线的修复方法 | |
TWI421812B (zh) | 顯示面板之陣列基板及其修補方法 | |
TWI409558B (zh) | 顯示面板及其訊號線修補方法 | |
WO2014205856A1 (zh) | 一种线路修补结构及修补方法 | |
WO2014201822A1 (zh) | 阵列基板、显示装置及阵列基板的修复方法 | |
CN106169482B (zh) | 一种基板及其制作方法、电子器件 | |
JP2010009047A5 (zh) | ||
CN104503176A (zh) | 阵列基板、显示面板及显示装置 | |
CN110416270B (zh) | Oled显示面板及其检测方法、显示装置 | |
WO2014205892A1 (zh) | 像素单元、阵列基板及其制造、修复方法和显示装置 | |
WO2013053164A1 (zh) | Tft-lcd阵列基板及其制造方法 | |
CN102650784B (zh) | 一种阵列基板、液晶显示器件及其修复方法 | |
US20140041917A1 (en) | Display panel | |
US20180204829A1 (en) | Array substrate and display device | |
WO2018176754A1 (zh) | 阵列基板、显示面板及显示装置 | |
WO2018205553A1 (zh) | 阵列基板及其制作方法和维修方法、显示装置 | |
CN103135297A (zh) | 一种薄膜晶体管液晶显示装置及其断线数据线修复方法 | |
CN108920009B (zh) | 触摸显示屏、显示装置及其修复方法 | |
CN104051409B (zh) | 用于修复的线路结构和具有这种线路结构的平板显示设备 | |
CN102798999A (zh) | 一种阵列基板十字线修复方法、阵列基板和液晶显示器 | |
WO2014127580A1 (zh) | 静电保护电路、显示装置和静电保护方法 | |
WO2020108143A1 (zh) | 一种阵列基板、显示面板及显示装置 | |
US20150370101A1 (en) | Method of repairing display panel, and display panel | |
WO2016037373A1 (zh) | 薄膜晶体管阵列基板及薄膜晶体管阵列基板的制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 14355327 Country of ref document: US |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13887056 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 09.06.2016) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 13887056 Country of ref document: EP Kind code of ref document: A1 |