WO2018205553A1 - 阵列基板及其制作方法和维修方法、显示装置 - Google Patents

阵列基板及其制作方法和维修方法、显示装置 Download PDF

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Publication number
WO2018205553A1
WO2018205553A1 PCT/CN2017/112759 CN2017112759W WO2018205553A1 WO 2018205553 A1 WO2018205553 A1 WO 2018205553A1 CN 2017112759 W CN2017112759 W CN 2017112759W WO 2018205553 A1 WO2018205553 A1 WO 2018205553A1
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Prior art keywords
common
substrate
section
common line
signal line
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PCT/CN2017/112759
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English (en)
French (fr)
Inventor
张世举
刘国全
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京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Priority to US15/778,780 priority Critical patent/US10497721B2/en
Publication of WO2018205553A1 publication Critical patent/WO2018205553A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1306—Details
    • G02F1/1309—Repairing; Testing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133521—Interference filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an array substrate, a manufacturing method thereof, a maintenance method, and a display device.
  • Color-filter on Array is a technology that integrates a color filter substrate and an array substrate by forming a color film layer on the signal line layer of the array substrate.
  • Array substrate is a technology that integrates a color filter substrate and an array substrate by forming a color film layer on the signal line layer of the array substrate.
  • the array substrate For the fabricated array substrate, if the signal line in the array substrate is broken, the array substrate is usually repaired by first punching holes in the color film layer until the holes reach the signal line layer, and then at the punched position.
  • the particles formed by the photothermal reaction for example, tungsten powder
  • An embodiment of the present disclosure provides an array substrate including: a substrate substrate, a signal line layer, a color film layer, and a common line layer insulated from the signal line layer, which are sequentially stacked, the signal line layer includes a substantially parallel signal line, the common line layer comprising a plurality of substantially parallel first common lines, and a plurality of substantially parallel second common lines, the first common line and the second common line being cross-connected .
  • An orthographic projection of the signal line on the substrate substrate is substantially parallel to an orthographic projection of the second common line on the substrate; an orthographic projection of each signal line on the substrate substrate and the plurality of lines
  • the first common line has a coincident region on the orthographic projection of the base substrate;
  • the color film layer has a via hole penetrating the color film layer, an orthographic projection of the via hole on the base substrate and the The coincident regions at least partially overlap.
  • the first common line and the second common line form a grid-like structure, and the signal lines pass through the grid area of the grid-like structure.
  • the first common line and the second common line are perpendicular to each other, and the orthographic projection of the first common line on the base substrate and the orthographic projection of the signal line on the base substrate are perpendicular to each other.
  • the color film layer comprises a black matrix and color resists arranged in a stack.
  • the array substrate further includes a common electrode electrically coupled to the common line layer.
  • Another embodiment of the present disclosure provides a display device including the foregoing embodiment The array substrate of any of the embodiments.
  • Yet another embodiment of the present disclosure provides a method for fabricating an array substrate, including the following steps:
  • the signal line layer comprising a plurality of substantially parallel signal lines
  • first common line and the second common line Cross-connected.
  • An orthographic projection of the signal line on the substrate substrate is substantially parallel to an orthographic projection of the second common line on the substrate substrate, and an orthographic projection of each signal line on the substrate substrate and the plurality of strips.
  • the orthographic projection of the first common line on the base substrate has a coincident region, and the via corresponds to the coincident region.
  • the color film layer includes a black matrix and a color color resist, and the color film layer is formed over the surface of the signal line facing away from the substrate substrate, and the color film layer is formed through the patterning process. Vias include the following steps:
  • Via holes penetrating the color resist and the black matrix are formed by a patterning process.
  • the color film layer includes a black matrix and a color color resist.
  • a color film layer is formed over the surface of the signal line facing away from the substrate substrate, and the color film is formed through a patterning process.
  • the vias of the layer include the following steps:
  • a further embodiment of the present disclosure provides a method of repairing an array substrate, which can be used to repair an array substrate as described in the foregoing embodiments, the maintenance method comprising the steps of:
  • the connecting section is connected to the second breaking section through the through hole, and cuts the kth first common section as the second connecting section to form two sections of the second connecting section, wherein the second connecting section and the second breaking section connection;
  • the first connection subsection, the third connection subsection and the second connection subsection are used for transmitting signals, r ⁇ k, r>0, k>0, s>0.
  • k r+1.
  • the method further comprises the steps of:
  • the method further comprises the steps of:
  • the kth first common segment as the second connecting segment is cut by laser cutting to form two segments of the second connecting subsection.
  • the second common line of the sth is cut by laser cutting to form a three-stage third connecting sub-segment.
  • FIG. 1 is a schematic plan view showing an array substrate of an array substrate according to an embodiment of the present disclosure
  • Figure 2 is a cross-sectional view taken along line A-A of Figure 1;
  • FIG. 3 is a diagram for illustrating steps of a maintenance method provided in accordance with an embodiment of the present disclosure.
  • the inventors of the present application have recognized that for the prior art array substrate repair method of repairing a broken signal line by depositing particles generated by photothermal reaction, the photothermal reaction generated particles are directly deposited on the color film layer.
  • the heat generated by the photothermal reaction may cause damage to the color film layer, causing defects such as discoloration, uneven surface or perforation of the color film layer, and may even cause the array substrate to be scrapped.
  • the array substrate includes a substrate substrate 1, a signal line layer 2, a color film layer 3, and a common line insulated from the signal line layer 2, which are sequentially stacked.
  • Layer 4 The signal line layer 2 includes a plurality of substantially parallel signal lines 21, the common line layer 4 includes a plurality of substantially parallel first common lines 41, and a plurality of substantially parallel second common lines 42, the first common line 41 and The second common lines 42 are cross-connected to each other, and the orthographic projection of the signal lines 21 on the base substrate 1 is substantially parallel to the orthographic projection of the second common line 42 on the base substrate 1, and each of the signal lines 21 is on the base substrate 1.
  • a common line 41 has a coincident region on the orthographic projection of the base substrate 1, and the overlap region is shown by an elliptical frame in FIG.
  • the portion of the color film layer 3 corresponding to the overlap region is provided with a via 31 penetrating the color filter layer 3, which also means that the orthographic projection of the via 31 on the substrate substrate 1 at least partially overlaps with the overlap region.
  • the following maintenance method can be used for maintenance.
  • the breaking signal line 21' at this time includes the first breaking section 211' and the second breaking section 212', and the breaking point 22' of the breaking signal line 21' Located between the first breaking section 211' and the second breaking section 212';
  • the orthographic projection of the rth first common line 41' on the base substrate 1 and the first open section 211' on the base substrate 1 The orthographic projection has a coincident region, and the orthographic projection of the kth first common line 41" on the substrate substrate 1 and the orthographic projection of the second disconnecting portion 212' on the substrate substrate 1 have overlapping regions;
  • the kth first common line 41" is cut at one side of the portion of the kth first common line 41" overlapping the overlapping area to form two kth first common segments 411", wherein a kth first common
  • the segment 411" is connected as a second connecting segment to the second breaking segment 212' through the through hole 31, and cuts the kth first common segment 411" as the second connecting segment to form two segments of the second connecting subsection 411a" , wherein a section of the second connecting subsection 411a" is coupled to the second disconnecting section 212';
  • first connection subsection 411a', the third connection subsection 421', and the second connection subsection 411a" can be utilized for transmitting signals to complete maintenance of the array substrate;
  • a first common line 41', a kth first common line 41" and a sth second common line 42', and the above-mentioned rth first common line 41', the kth first common line 41" and The second common line 42' of the sth is cut.
  • the first connecting sub-section 411a' and the second connecting sub-section 411a" formed after the slitting can be respectively worn.
  • the via 31 is connected to the open signal line 21' such that the first connection subsection 411a', the third connection subsection 421' and the second connection subsection 411a" can be used to transmit signals.
  • the heat required for the slitting process is insufficient to cause damage to the color filter layer 3, so that the shutdown of the signal line 21 in the array substrate can be repaired without damaging the color filter layer 3.
  • the first common line 41 and the second common line 42 constitute a grid-like structure, and the plurality of signal lines 21 pass through the grid area of the grid-like structure.
  • first common line 41 and the second common line 42 are perpendicularly connected to each other to form a grid-like structure
  • the orthographic projection of the first common line 41 on the base substrate 1 and the orthographic projection of the signal line 21 on the base substrate 1 are mutually Vertically
  • the orthographic projection of the second common line 42 on the base substrate 1 and the orthographic projection of the signal line 21 on the base substrate 1 are parallel to each other, so that the first common line 41, the second common line 42, and the signal line 21 are
  • the orthographic projection of the base substrate 1 can constitute a regular rectangular grid-like structure, which improves the designability of the array substrate and the regularity of the structure, and simplifies the design process.
  • the color film layer 3 in the above embodiment may include a black matrix 32 and a color resist 33 arranged in a stacked manner.
  • the color resist 33 generally includes a red color resist R, a green color resist G, and a blue color resist B for realizing color display; the black matrix 32 is for preventing light leakage and color crosstalk between adjacent two color resists. problem.
  • the material of the signal line, the first common line and the second common line it may be a conductive material such as a metal or a metal oxide, which is not limited in the present invention.
  • the array substrate further includes a common electrode 5, a pixel electrode 6, a thin film transistor array, and a gate signal line 11 disposed on the base substrate 1.
  • Each of the thin film transistor arrays 9 includes a source 901 and a drain. 902, a gate 903, and an active layer 904 between the source 901 and the drain 902.
  • the common electrode 5 is electrically connected to the common line layer 4, the source 901 is electrically connected to the signal line 21, the drain 902 is electrically connected to the pixel electrode 5, and the gate 903 is electrically connected to the gate signal line 11; alternatively, the common electrode 5 is connected Can be electrically connected to the common line layer 4,
  • the source 901 can be electrically connected to the pixel electrode 5, the drain 902 can be electrically connected to the signal line 21, and the gate 903 can be electrically connected to the gate signal line 11.
  • the gate signal line 11 delivers the pulse signal to the gate 903, the thin film transistor is turned on.
  • the signal line 21 supplies the voltage signal to the source 901 and the drain 902, the pixel electrode 5 can be charged. Thereby, the deflection of the liquid crystal is controlled by the electric field formed between the common electrode 5 and the pixel electrode 6.
  • an insulating layer 7 may be disposed between the common line layer 4 and the signal line layer 2.
  • the common line layer 4 can be directly formed on the surface of the insulating layer 7 facing away from the base substrate 1. Since the insulating layer 7 is generally of a continuous structure, there is no via hole, so that the insulating layer 7 It is also possible to prevent the problem that the common line layer 4 is short-circuited by the connection of the via hole 31 to the signal line 21 during the formation.
  • the gate insulating layer 10 may be provided between the gate electrode 903 and the signal line 21.
  • a protective layer 8 may be provided between the thin film transistor array 9 and the color film layer 3.
  • Another embodiment of the present disclosure provides a display device including the array substrate described in the foregoing embodiments.
  • the display device provided in this embodiment may have the same advantageous effects as the array substrate provided in the foregoing embodiment, and details are not described herein again.
  • the display device in this embodiment may be any product or component having a display function, such as a liquid crystal panel, an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • a display function such as a liquid crystal panel, an electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • a further embodiment of the present disclosure provides a method for fabricating an array substrate, which can be used to fabricate the array substrate provided by the foregoing embodiments.
  • the manufacturing method can include the following steps:
  • the signal line layer 2 Forming a signal line layer 2 above the base substrate 1, the signal line layer 2 comprising a plurality of substantially parallel signal lines 21;
  • a plurality of substantially parallel first common lines 41 and a plurality of substantially parallel second common lines 42 are formed on the surface of the color filter layer 3 facing away from the base substrate 1, wherein the first common line 41 and the second common line 42 Cross-connecting, orthographic projection of the signal line 21 on the substrate 1
  • the orthogonal projections of the two common lines 42 on the base substrate 1 are substantially parallel, and the orthogonal projection of each of the signal lines 21 on the base substrate 1 and the orthographic projection of the plurality of first common lines 41 on the base substrate 1 have overlapping regions, and
  • the via 31 corresponds to the overlap region.
  • the method for fabricating the array substrate provided in this embodiment may have the same advantageous effects as the array substrate provided in the foregoing embodiment, and details are not described herein again.
  • Forming the via 31 by the one-step method may include the following steps:
  • a via 31 penetrating the color resist 33 and the black matrix 32 is formed by a patterning process.
  • forming the via 31 may include the following steps:
  • a color color resist 33 is formed on the surface of the black matrix 32 facing away from the base substrate 1, and a color resist via 312 penetrating through the color resist 33 is formed by a patterning process, so that the color resist via 312 is in communication with the black matrix via 311.
  • the color resist via 312 and the black matrix via 311 constitute a via 31.
  • the step of forming the one-step method is brief, and the alignment process of the black matrix via 311 and the color resist via 312 can be omitted, so that errors due to poor alignment can be reduced.
  • a further embodiment of the present disclosure provides a method for repairing an array substrate.
  • the method can be used to repair the array substrate provided by the foregoing embodiments of the present disclosure.
  • the maintenance method is used. Including the following steps:
  • the breaking signal line 21' includes the first breaking section 211' and the second breaking section 212', and the breaking point 22' of the breaking signal line 21' is located at the Between a broken section 211' and the second broken section 212';
  • the kth first common line 41" is cut at one side of the portion of the kth first common line 41" overlapping the overlapping area to form two kth first common segments 411", wherein a kth first common
  • the segment 411" is connected as a second connecting segment to the second breaking segment 212' through the through hole 31, and cuts the kth first common segment 411" as the second connecting segment to form two segments of the second connecting subsection 411a" , wherein a section of the second connecting subsection 411a" is coupled to the second disconnecting section 212';
  • the first connecting subsection 411a', the third connecting subsection 421' and the second connecting subsection 411a" are used to transmit signals to complete maintenance of the array substrate;
  • the maintenance method of the array substrate provided in this embodiment has the same advantageous effects as the array substrate provided in the foregoing embodiment, and details are not described herein again.
  • the cutting process involved in the above embodiment may adopt a laser cutting manner, and the connection of the rth first common section 411' with the first breaking section 211', the kth first common section 411" and the second breaking section 212' The process may be in a molten manner.
  • the r-th first common line 41' is cut on one side of the portion where the r-th first common line 41' overlaps the overlapping area, forming two segments of the r-th a common section 411', wherein a section of the rth first common section 411' is connected as a first connecting section to the first breaking section 211' through the through hole 31, and cuts the rth common section 411' as the first connecting section Forming two segments of the first connecting subsection 411a', wherein connecting the first connecting subsection 411a' with the first breaking section 211' may include the following steps:
  • a portion in which a portion of the rth first common portion 41' overlaps with the overlap region is melted in a molten manner, and molten liquid formed after melting passes through the via hole 31, so that a portion of the rth first common portion 411' serves as a first connection
  • the segment is connected to the first disconnected segment 211';
  • the r-th first common segment 411' as the first connecting segment is cut by laser cutting to form two segments of the first connecting sub-segment 411a', wherein a segment of the first connecting sub-segment 411a' is connected to the first breaking segment 211' .
  • the kth first common line 41" is cut at one side of the portion where the kth first common line 41" overlaps with the coincidence area, forming two kth first common segments 411", wherein a section k
  • the first common section 411" is connected as a second connecting section to the second breaking section 212' through the through hole 31, and cuts the kth first common section 411" as the second connecting section to form two second connecting sections.
  • the segment 411a", wherein a segment of the second connecting subsection 411a" is coupled to the second disconnecting segment 212', may include the following steps:
  • a portion of the k-th first common segment 411" overlapping the overlap region is melted in a molten manner, and the molten liquid formed after melting passes through the via hole 31 such that a portion of the kth first common segment 411" serves as a second connection
  • the segment is connected to the second broken segment 212';
  • the kth common segment 411" as the second connecting segment is cut by laser cutting to form two segments of the second connecting subsection 411a", wherein a segment of the second connecting subsection 411a" is coupled to the second breaking segment 212'.
  • the second common line 42' of the sth can be cut by laser cutting to form a third section of the third connecting subsection 421', wherein a third section
  • the connecting subsections 421' are respectively connected to the first connecting subsection 411a' and the second connecting subsection 411a".
  • cutting the s second common line 42' may include the following steps:
  • the second common line 42' of the sth is cut by laser cutting to form a three-stage third connecting sub-section 421', wherein a third connecting sub-section 421' is respectively connected with the first connecting sub-section 411a' and the second The connection subsection 411a" is connected.

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Abstract

一种阵列基板及其制作方法和维修方法、显示装置，涉及显示技术领域。阵列基板包括：依次层叠布置的衬底基板(1)、信号线层(2)、彩膜层(3)、以及与信号线层(2)绝缘的公共线层(4)，信号线层(2)包括多条大致平行的信号线(21)，公共线层(4)包括多条第一公共线(41)、多条的第二公共线(42)；第一公共线(41)与第二公共线(42)交叉连接；信号线(21)在衬底基板(1)上的正投影与第二公共线(42)在衬底基板(1)上的正投影大致平行；每条信号线(21)在衬底基板(1)的正投影与多条第一公共线(41)在衬底基板(1)的正投影具有重合区；彩膜层(3)具有贯穿彩膜层(3)的过孔(31)，过孔(31)在衬底基板(1)上的正投影与重合区至少部分重叠。

Description

阵列基板及其制作方法和维修方法、显示装置 技术领域
本公开涉及显示技术领域，尤其涉及一种阵列基板及其制作方法和维修方法、显示装置。
背景技术
彩膜阵列集成技术(Color-filter on Array，缩写为COA)是一种将彩膜基板和阵列基板集成在一起的技术，该技术是通过在阵列基板的信号线层上形成彩膜层来构成阵列基板。
对于制作完成的阵列基板，若阵列基板中的信号线发生断路，通常采用以下方式对阵列基板进行维修：先在彩膜层中打孔，直至孔到达信号线层，然后，在打孔的位置，采用光热反应生成的颗粒(例如，钨粉单质)进行连续沉积来形成膜，进而将信号线的断路连接起来。
发明内容
本公开的实施例提供了一种阵列基板，包括：依次层叠布置的衬底基板、信号线层、彩膜层、以及与所述信号线层绝缘的公共线层，所述信号线层包括多条大致平行的信号线，所述公共线层包括多条大致平行的第一公共线、以及多条大致平行的第二公共线，所述第一公共线与所述第二公共线相互交叉连接。信号线在所述衬底基板上的正投影与所述第二公共线在所述衬底基板上的正投影大致平行；每条信号线在所述衬底基板的正投影与所述多条第一公共线在所述衬底基板的正投影具有重合区；所述彩膜层具有贯穿所述彩膜层的过孔，所述过孔在所述衬底基板上的正投影与所述重合区至少部分重叠。
在一些实施例中，第一公共线与所述第二公共线构成网格状结构，信号线穿过网格状结构的网格区域。
在一些实施例中，第一公共线与所述第二公共线相互垂直，第一公共线在所述衬底基板的正投影与所述信号线在衬底基板的正投影相互垂直。
在一些实施例中，彩膜层包括层叠布置的黑矩阵和彩色色阻。
在一些实施例中，阵列基板还包括与所述公共线层电连接的公共电极。
本公开的另一实施例提供了一种显示装置，包括如前述实施例中 任一实施例所述的阵列基板。
本公开的又一实施例提供了一种阵列基板的制作方法，包括如下步骤：
提供衬底基板；
在所述衬底基板上形成信号线层，所述信号线层包括多条大致平行的信号线；
在所述信号线层背向所述衬底基板的表面上方形成彩膜层，并通过构图工艺形成贯穿所述彩膜层的过孔；
在所述彩膜层背向所述衬底基板的表面上方形成多条大致平行的第一公共线和多条大致平行的第二公共线，所述第一公共线和所述第二公共线相互交叉连接。信号线在所述衬底基板上的正投影与所述第二公共线在所述衬底基板上的正投影大致平行，每条信号线在所述衬底基板的正投影与所述多条第一公共线在所述衬底基板的正投影具有重合区，且所述过孔与所述重合区相对应。
在一些实施例中，彩膜层包括黑矩阵和彩色色阻，所述在所述信号线背向所述衬底基板的表面上方形成彩膜层，通过构图工艺形成贯穿所述彩膜层的过孔包括如下步骤：
在所述信号线层背向所述衬底基板的表面上方形成黑矩阵；
在所述黑矩阵背向所述衬底基板的表面上形成彩色色阻；
通过构图工艺形成贯穿所述彩色色阻和所述黑矩阵的过孔。
在一些实施例中，彩膜层包括黑矩阵和彩色色阻，替代性地，在所述信号线背向所述衬底基板的表面上方形成彩膜层，通过构图工艺形成贯穿所述彩膜层的过孔包括如下步骤：
在所述信号线背向所述衬底基板的表面上方形成黑矩阵，通过构图工艺形成贯穿所述黑矩阵的黑矩阵过孔，所述黑矩阵过孔与所述重合区相对应；
在所述黑矩阵背向所述衬底基板的表面上形成彩色色阻，通过构图工艺形成贯穿所述彩色色阻的彩色色阻过孔，使得所述彩色色阻过孔与所述黑矩阵过孔连通，其中，所述彩色色阻过孔与所述黑矩阵过孔相对应，所述彩色色阻过孔与所述黑矩阵过孔构成所述过孔。
本公开的另外的实施例提供一种阵列基板的维修方法，其可用于维修如前述实施例所述的阵列基板，所述维修方法包括如下步骤：
确定出现断路的信号线中的断路点所在位置，其中，出现断路的信号线包括第一断路段和第二断路段，所述断路点位于第一断路段和第二断路段之间；
获取第r条第一公共线和第k条第一公共线，其中，第r条第一公共线在衬底基板的正投影与第一断路段在衬底基板的正投影具有重合区，第k条第一公共线在衬底基板的正投影与第二断路段在衬底基板的正投影具有重合区；
在第r条第一公共线与所述重合区重叠的部分的一侧切开第r条第一公共线，形成两段第r第一公共段，其中一段第r第一公共段作为第一连接段穿过过孔与第一断路段连接，并将作为第一连接段的第r第一公共段切开，形成两段第一连接子段，其中一段第一连接子段与第一断路段连接；
在第k条第一公共线与所述重合区重叠的部分的一侧切开第k条第一公共线，形成两段第k第一公共段，其中一段第k第一公共段作为第二连接段穿过过孔与第二断路段连接，将作为第二连接段的第k第一公共段切开，形成两段第二连接子段，其中一段第二连接子段与第二断路段连接；
获取分别与第一连接子段和第二连接子段连接的第s条第二公共线；
将第s条第二公共线切开，形成三段第三连接子段，其中一段第三连接子段分别与第一连接子段和第二连接子段连接；
其中所述第一连接子段、第三连接子段和第二连接子段用于传送信号，r≠k，r＞0，k＞0，s＞0。
在一些实施例中，k＝r+1。
在一些实施例中，所述方法还包括如下步骤：
采用激光切割的方式在第r条第一公共线与所述重合区重叠的部分的一侧切开第r条第一公共线，形成两段第r第一公共段；
采用熔融的方式将所述第一连接段与所述重合区重叠的部分熔融，熔融后形成的熔融液穿过过孔，使得所述第一连接段与第一断路段连接；
采用激光切割的方式将作为所述第一连接段的第r第一公共段切开，形成两段第一连接子段，其中一段第一连接子段与第一断路段连 接。
在一些实施例中，所述方法还包括如下步骤：
采用激光切割的方式在第k条第一公共线与所述重合区重叠的部分的一侧切开第k条第一公共线，形成两段第k第一公共段；
采用熔融的方式将所述第二连接段与所述重合区重叠的部分熔融，熔融后形成的熔融液穿过过孔，使得所述第二连接段与第二断路段连接；
采用激光切割的方式将作为所述第二连接段的第k第一公共段切开，形成两段第二连接子段。
在一些实施例中，采用激光切割的方式将第s条第二公共线切开，形成三段第三连接子段。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，在附图中：
图1为本公开的一个实施例提供的阵列基板的平面结构示意图；
图2为沿着图1中的线A-A而得到剖视图；
图3用于图示根据为本公开实施例提供的维修方法的步骤。
具体实施方式
为使本公开实施例所提出的技术方案的目的、特征和优点能够更加明显易懂，下面将结合附图，对本公开中的实施例进行说明。
本申请的发明人认识到，对于之前提到的通过沉积由光热反应生成的颗粒来维修断路的信号线的现有的阵列基板维修方法，光热反应生成的颗粒是直接沉积在彩膜层上的，而光热反应所产生的热量会对彩膜层造成损伤，使得彩膜层出现变色、表面不平或穿孔等缺陷，甚至会导致阵列基板的报废。
本实施例提供了一种阵列基板，参见图1-图2，该阵列基板包括依次层叠布置的衬底基板1、信号线层2、彩膜层3、以及与信号线层2绝缘的公共线层4。信号线层2包括多条大致平行的信号线21，公共线层4包括多条大致平行的的第一公共线41、以及多条大致平行的的第二公共线42，第一公共线41与第二公共线42相互交叉连接，信号线21在衬底基板1上的正投影与第二公共线42在衬底基板1上的正投影大致平行，且每条信号线21在衬底基板1的正投影与所述多条第 一公共线41在衬底基板1的正投影具有重合区，重合区如图3中椭圆框所示。彩膜层3与重合区对应的部分设有贯穿彩膜层3的过孔31，这也意味着过孔31在衬底基板1上的正投影与重合区至少部分重叠。
当上述阵列基板的信号线层2中的信号线21出现断路类不良，如图3所示，可以采用如下维修方法进行维修。
确定出现断路的断路信号线21’中的断路点22’所在位置，此时断路信号线21’包括第一断路段211’和第二断路段212’，断路信号线21’的断路点22’位于第一断路段211’和第二断路段212’之间；
获取第r条第一公共线41’和第k条第一公共线41”，第r条第一公共线41’在衬底基板1的正投影与第一断路段211’在衬底基板1的正投影具有重合区，第k条第一公共线41”在衬底基板1的正投影与第二断路段212’在衬底基板1的正投影具有重合区；
在第r条第一公共线41’与重合区重叠的部分的一侧切开第r条第一公共线41’，形成两段第一公共段411’，其中一段作为穿过过孔31与第一断路段211’连接的第一连接段，将作为第一连接段的第一公共段411’切开，形成两段第一连接子段411a’，其中一段第一连接子段411a’与第一断路段211’连接；
在第k条第一公共线41”与重合区重叠的部分的一侧切开第k条第一公共线41”，形成两段第k第一公共段411”，其中一段第k第一公共段411”作为第二连接段穿过过孔31与第二断路段212’连接，将作为第二连接段的第k第一公共段411”切开，形成两段第二连接子段411a”，其中一段第二连接子段411a”与第二断路段212’连接；
获取分别与第一连接子段411a’和第二连接子段411a”连接的第s条第二公共线42’；
将第s条第二公共线42’切开，形成三段第三连接子段421’，其中一段第三连接子段421’分别与第一连接子段411a’和第二连接子段411a”连接。
这样，可以利用第一连接子段411a’、第三连接子段421’和第二连接子段411a”用于传送信号，完成对阵列基板的维修；
其中，r≠k，r＞0，k＞0，s＞0。
需要说明的是，图3中以粗实线示出切开的位置，以虚线示出维修后的信号传输方向。
利用本公开实施例提供的阵列基板，当阵列基板的信号线21出现断路类不良时，仅需要在确定断路信号线21’中的断路点22’所在位置的前提下，获取相应的第r条第一公共线41’、第k条第一公共线41”和第s条第二公共线42’，并将上述第r条第一公共线41’、第k条第一公共线41”和第s条第二公共线42’切开。而由于彩膜层3与重合区对应的部分设有贯穿该彩膜层的过孔31，所以，可以使得切开后形成的第一连接子段411a’和第二连接子段411a”分别穿过过孔31与断路信号线21’连接，从而使得第一连接子段411a’、第三连接子段421’和第二连接子段411a”可以用于传送信号。切开的过程所需要的热量是不足以对彩膜层3造成损伤的，从而可以在不损伤彩膜层3的前提下，实现对阵列基板中信号线21的断路类不良进行维修。
示例性地，参见图1，第一公共线41与第二公共线42构成网格状结构，多条信号线21穿过网格状结构的网格区域。
具体的，第一公共线41与第二公共线42相互垂直连接以形成网格状结构，第一公共线41在衬底基板1的正投影与信号线21在衬底基板1的正投影相互垂直，第二公共线42在衬底基板1的正投影与信号线21在衬底基板1的正投影相互平行，从而使得第一公共线41、第二公共线42和信号线21三者在衬底基板1的正投影可以构成规则的矩形网格状结构，提高阵列基板的可设计性和结构的规整性，简化设计工艺。
上述实施例中彩膜层3可包括层叠布置的黑矩阵32和彩色色阻33。其中，彩色色阻33一般包括红色色阻R、绿色色阻G和蓝色色阻B，用于实现彩色显示；黑矩阵32用于防止漏光以及相邻两个彩色色阻之间发生颜色串扰的问题。
对于信号线、第一公共线和第二公共线的材料，其可以为金属或者金属氧化物等导电材料均可，本发明对此不作限制。
此外，上述阵列基板还包括设在衬底基板1的公共电极5、像素电极6、薄膜晶体管阵列和栅极信号线11，薄膜晶体管阵列中的每个薄膜晶体管9均包括源极901、漏极902、栅极903以及位于源极901和漏极902之间的有源层904。公共电极5与公共线层4电连接，源极901与信号线21电连接，漏极902与像素电极5电连接，栅极903与栅极信号线11电连接；替代性地，公共电极5可与公共线层4电连接， 源极901可与像素电极5电连接，漏极902可与信号线21电连接，栅极903可与栅极信号线11电连接。当栅极信号线11将脉冲信号输送至栅极903时，薄膜晶体管被导通，此时，若信号线21将电压信号输送至源极901和漏极902，可以对像素电极5进行充电，从而通过公共电极5和像素电极6之间形成的电场来控制液晶的偏转。
为了防止公共线层4和信号线层2之间发生短路，可以在公共线层4与信号线层2之间设置绝缘层7。这样，在制作上述阵列基板的过程中，公共线层4可以直接形成在绝缘层7背向衬底基板1的表面，由于绝缘层7通常为连续结构，不存在过孔，从而使得绝缘层7也可以防止公共线层4在形成过程中穿过过孔31与信号线21连接而出现短路的问题。
同样地，为了防止栅极903与信号线21发生短路，可以在栅极903和信号线21之间设置栅极绝缘层10。
为了避免彩膜层3与有源层904内的半导体接触，影响薄膜晶体管9的特性，可以在薄膜晶体管阵列9与彩膜层3之间设置保护层8。
本公开的另一实施例提供了一种显示装置，该显示装置包括前述实施例所述的阵列基板。
本实施例提供的显示装置可具有与前述实施例提供的阵列基板相同的有益效果，在此不再赘述。
需要说明的是，本实施例中的显示装置可以为液晶面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本公开的又一实施例提供了一种阵列基板的制作方法，其可用于制作前述实施例提供的阵列基板，该制作方法可包括如下步骤：
提供衬底基板1；
在衬底基板1上方形成信号线层2，该信号线层2包括多条大致平行的的信号线21；
在信号线层21背向衬底基板1的表面上方形成彩膜层3，通过构图工艺形成贯穿彩膜层3的过孔31；
在彩膜层3背向衬底基板1的表面上形成多条大致平行的第一公共线41和多条大致平行的第二公共线42，其中，第一公共线41和第二公共线42相互交叉连接，信号线21在衬底基板1上的正投影与第 二公共线42在衬底基板1上的正投影大致平行，每条信号线21在衬底基板1的正投影与多条第一公共线41在衬底基板1的正投影具有重合区，且过孔31与重合区相对应。
本实施例提供的阵列基板的制作方法可具有与前述实施例提供的阵列基板相同的有益效果相同，在此不再赘述。
对于过孔31的形成方法，可以采用一步法，也可以包括两个步骤。采用一步法来形成过孔31可以包括如下步骤：
在信号线层2背向衬底基板1的表面依次形成黑矩阵32和彩色色阻33；
通过构图工艺形成贯穿彩色色阻33和黑矩阵32的过孔31。
替代性地，形成过孔31可以包括如下步骤：
在信号线层2背向衬底基板1的表面形成黑矩阵32，通过构图工艺形成贯穿黑矩阵32的黑矩阵过孔311；
在黑矩阵32背向衬底基板1的表面形成彩色色阻33，通过构图工艺形成贯穿彩色色阻33的彩色色阻过孔312，使得彩色色阻过孔312与黑矩阵过孔311连通，彩色色阻过孔312与黑矩阵过孔311构成过孔31。
相比于两步法的形成方式，一步法的形成方式步骤简要，可以省略黑矩阵过孔311和彩色色阻过孔312的对位过程，从而可以减少由于对位不良而产生的误差。
本公开的另外的实施例提供了一种阵列基板的维修方法，参见图3，该方法可用于维修本公开前述实施例提供的阵列基板，当阵列基板的信号线201出现断路时，该维修方法包括如下步骤：
确定出现断路的断路信号线21’中的断路点22’所在位置，断路信号线21’包括第一断路段211’和第二断路段212’，断路信号线21’的断路点22’位于第一断路段211’和第二断路段212’之间；
获取第r条第一公共线41’和第k条第一公共线41”，其中，第r条第一公共线41’在衬底基板1的正投影与第一断路段211’在衬底基板1的正投影具有重合区，第k条第一公共线41”在衬底基板1的正投影与第二断路段212’在衬底基板1的正投影具有重合区；
在第r条第一公共线41’与重合区重叠的部分的一侧切开第r条第一公共线41’，形成两段第r第一公共段411’，其中一段第r第一公共 段411’作为第一连接段穿过过孔31与第一断路段211’连接，将作为第一连接段的第r公共段411’切开，形成两段第一连接子段411a’，其中一段第一连接子段411a’与第一断路段211’连接；
在第k条第一公共线41”与重合区重叠的部分的一侧切开第k条第一公共线41”，形成两段第k第一公共段411”，其中一段第k第一公共段411”作为第二连接段穿过过孔31与第二断路段212’连接，将作为第二连接段的第k第一公共段411”切开，形成两段第二连接子段411a”，其中一段第二连接子段411a”与第二断路段212’连接；
获取分别与第一连接子段411a’和第二连接子段411a”连接的第s条第二公共线42’；
将第s条第二公共线42’切开，形成三段第三连接子段421’，其中一段第三连接子段421’分别与第一连接子段411a’和第二连接子段411a”连接；
第一连接子段411a’、第三连接子段421’和第二连接子段411a”用于传送信号，完成对阵列基板的维修；
其中，r≠k，r＞0，k＞0，s＞0。
需要说明的是，图3中以粗实线示出切开的位置，以虚线示出维修后的信号传输方向。
在一些实施例中，k＝r+1，即第r条第一公共线41’与第k条第一公共线41”相邻，这样能够缩短用于传输信号的第三连接子段421’的长度，从而保证公共线层4的完整。
本实施例提供的阵列基板的维修方法具有与前述实施例提供的阵列基板相同的有益效果，在此不再赘述。
上述实施例中所涉及的切开过程可采用激光切割的方式，第r第一公共段411’与第一断路段211’、第k第一公共段411”与第二断路段212’的连接过程可采用熔融的方式。示例性地，上述的在第r条第一公共线41’与重合区重叠的部分的一侧切开第r条第一公共线41’，形成两段第r第一公共段411’，其中一段第r第一公共段411’作为第一连接段穿过过孔31与第一断路段211’连接，将作为第一连接段的第r公共段411’切开，形成两段第一连接子段411a’，其中一段第一连接子段411a’与第一断路段211’连接可包括如下步骤：
采用激光切割的方式在第r条第一公共线41’与重合区重叠的部分 的一侧切开第r条第一公共线41’，形成两段第r第一公共段411’；
采用熔融的方式使得其中一段第r第一公共段41’与重合区重叠的部分熔融，熔融后形成的熔融液穿过过孔31，使得其中一段第r第一公共段411’作为第一连接段与第一断路段连接211’；
采用激光切割的方式切开作为第一连接段的第r第一公共段411’，形成两段第一连接子段411a’，其中一段第一连接子段411a’与第一断路段211’连接。
同样地，在第k条第一公共线41”与重合区重叠的部分的一侧切开第k条第一公共线41”，形成两段第k第一公共段411”，其中一段第k第一公共段411”作为第二连接段穿过过孔31与第二断路段212’连接，将作为第二连接段的第k第一公共段411”切开，形成两段第二连接子段411a”，其中一段第二连接子段411a”与第二断路段212’连接可包括如下步骤：
采用激光切割的方式在第k条第一公共线41”与重合区重叠的部分的一侧切开第k条第一公共线41”，形成两段第k第一公共段411”；
采用熔融的方式将其中一段第k第一公共段411”与重合区重叠的部分熔融，熔融后形成的熔融液穿过过孔31，使得其中一段第k第一公共段411”作为第二连接段与第二断路段212’连接；
采用激光切割的方式将作为第二连接段的第k公共段411”切开，形成两段第二连接子段411a”，其中一段第二连接子段411a”与第二断路段212’连接。
对于第s条第二公共线42’的切开过程也可以采用激光切割的方式，将第s条第二公共线42’切开，形成三段第三连接子段421’，其中一段第三连接子段421’分别与第一连接子段411a’和第二连接子段411a”连接，具体地，切开第s条第二公共线42’可包括如下步骤：
采用激光切割的方式将第s条第二公共线42’切开，形成三段第三连接子段421’，其中一段第三连接子段421’分别与第一连接子段411a’和第二连接子段411a”连接。
以上所述，仅为本公开的一些实施例，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。

Claims (14)

  1. 一种阵列基板，包括：依次层叠布置的衬底基板、信号线层、彩膜层、以及与所述信号线层绝缘的公共线层，其中所述信号线层包括多条大致平行的信号线，所述公共线层包括多条大致平行的第一公共线、以及多条大致平行的第二公共线，所述第一公共线与所述第二公共线相互交叉连接；
    其中所述信号线在所述衬底基板上的正投影与所述第二公共线在所述衬底基板上的正投影大致平行；
    每条信号线在所述衬底基板的正投影与所述多条第一公共线在所述衬底基板的正投影具有重合区；
    所述彩膜层具有贯穿所述彩膜层的过孔，所述过孔在所述衬底基板上的正投影与所述重合区至少部分重叠。
  2. 根据权利要求1所述的阵列基板，其中所述第一公共线与所述第二公共线构成网格状结构，所述信号线穿过网格状结构的网格区域。
  3. 根据权利要求1所述的阵列基板，其中所述第一公共线与所述第二公共线相互垂直，所述第一公共线在所述衬底基板的正投影与所述信号线在所述衬底基板的正投影相互垂直。
  4. 根据权利要求1所述的阵列基板，其中所述彩膜层包括层叠布置的黑矩阵和彩色色阻。
  5. 根据权利要求1-4中任一项所述的阵列基板，其中所述阵列基板还包括与所述公共线层电连接的公共电极。
  6. 一种显示装置，包括：如权利要求1～5任一项所述的阵列基板。
  7. 一种阵列基板的制作方法，包括如下步骤：
    提供衬底基板；
    在所述衬底基板上形成信号线层，所述信号线层包括多条大致平行的信号线；
    在所述信号线层背向所述衬底基板的表面上方形成彩膜层，并通过构图工艺形成贯穿所述彩膜层的过孔；
    在所述彩膜层背向所述衬底基板的表面上方形成多条大致平行的第一公共线和多条大致平行的第二公共线，所述第一公共线和所述第二公共线相互交叉连接，
    其中所述信号线在所述衬底基板上的正投影与所述第二公共线在所述衬底基板上的正投影大致平行，每条信号线在所述衬底基板的正投影与所述多条第一公共线在所述衬底基板的正投影具有重合区，且所述过孔与所述重合区相对应。
  8. 根据权利要求7所述的阵列基板的制作方法，其中所述彩膜层包括黑矩阵和彩色色阻，所述在所述信号线背向所述衬底基板的表面上方形成彩膜层，通过构图工艺形成贯穿所述彩膜层的过孔包括如下步骤：
    在所述信号线层背向所述衬底基板的表面上方形成黑矩阵；
    在所述黑矩阵背向所述衬底基板的表面上形成彩色色阻；
    通过构图工艺形成贯穿所述彩色色阻和所述黑矩阵的过孔。
  9. 根据权利要求7所述的阵列基板的制作方法，其中所述彩膜层包括黑矩阵和彩色色阻，所述在所述信号线背向所述衬底基板的表面上方形成彩膜层，通过构图工艺形成贯穿所述彩膜层的过孔包括如下步骤：
    在所述信号线背向所述衬底基板的表面上方形成黑矩阵，通过构图工艺形成贯穿所述黑矩阵的黑矩阵过孔，所述黑矩阵过孔与所述重合区相对应；
    在所述黑矩阵背向所述衬底基板的表面上形成彩色色阻，通过构图工艺形成贯穿所述彩色色阻的彩色色阻过孔，使得所述彩色色阻过孔与所述黑矩阵过孔连通，其中，所述彩色色阻过孔与所述黑矩阵过孔相对应，所述彩色色阻过孔与所述黑矩阵过孔构成所述过孔。
  10. 一种阵列基板的维修方法，用于维修如权利要求1～5任一项所述的阵列基板，所述维修方法包括如下步骤：
    确定出现断路的信号线中的断路点所在位置，其中，出现断路的信号线包括第一断路段和第二断路段，所述断路点位于第一断路段和第二断路段之间；
    获取第r条第一公共线和第k条第一公共线，其中，第r条第一公共线在衬底基板的正投影与第一断路段在衬底基板的正投影具有重合区，第k条第一公共线在衬底基板的正投影与第二断路段在衬底基板的正投影具有重合区；
    在第r条第一公共线与所述重合区重叠的部分的一侧切开第r条第 一公共线，形成两段第r第一公共段，其中一段第r第一公共段作为第一连接段穿过过孔与第一断路段连接，并将作为第一连接段的第r第一公共段切开，形成两段第一连接子段，其中一段第一连接子段与第一断路段连接；
    在第k条第一公共线与所述重合区重叠的部分的一侧切开第k条第一公共线，形成两段第k第一公共段，其中一段第k第一公共段作为第二连接段穿过过孔与第二断路段连接，将作为第二连接段的第k第一公共段切开，形成两段第二连接子段，其中一段第二连接子段与第二断路段连接；
    获取分别与第一连接子段和第二连接子段连接的第s条第二公共线；
    将第s条第二公共线切开，形成三段第三连接子段，其中一段第三连接子段分别与第一连接子段和第二连接子段连接；
    其中所述第一连接子段、第三连接子段和第二连接子段用于传送信号，r≠k，r＞0，k＞0，s＞0。
  11. 根据权利要求10所述的阵列基板的维修方法，其中，k＝r+1。
  12. 根据权利要求10所述的阵列基板的维修方法，其中所述方法还包括如下步骤：
    采用激光切割的方式在第r条第一公共线与所述重合区重叠的部分的一侧切开第r条第一公共线，形成两段第r第一公共段；
    采用熔融的方式将所述第一连接段与所述重合区重叠的部分熔融，熔融后形成的熔融液穿过过孔，使得所述第一连接段与第一断路段连接；
    采用激光切割的方式将作为所述第一连接段的第r第一公共段切开，形成两段第一连接子段，其中一段第一连接子段与第一断路段连接。
  13. 根据权利要求10所述的阵列基板的维修方法，其中所述方法还包括如下步骤：
    采用激光切割的方式在第k条第一公共线与所述重合区重叠的部分的一侧切开第k条第一公共线，形成两段第k第一公共段；
    采用熔融的方式将所述第二连接段与所述重合区重叠的部分熔融，熔融后形成的熔融液穿过过孔，使得所述第二连接段与第二断路 段连接；
    采用激光切割的方式将作为所述第二连接段的第k第一公共段切开，形成两段第二连接子段。
  14. 根据权利要求10所述的阵列基板的维修方法，其中采用激光切割的方式将第s条第二公共线切开，形成三段第三连接子段。
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