CN104375347B - 阵列基板、修补片、显示面板和修复阵列基板的方法 - Google Patents
阵列基板、修补片、显示面板和修复阵列基板的方法 Download PDFInfo
- Publication number
- CN104375347B CN104375347B CN201410735902.XA CN201410735902A CN104375347B CN 104375347 B CN104375347 B CN 104375347B CN 201410735902 A CN201410735902 A CN 201410735902A CN 104375347 B CN104375347 B CN 104375347B
- Authority
- CN
- China
- Prior art keywords
- base palte
- array base
- patch
- periphery circuit
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 230000002093 peripheral effect Effects 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 39
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/28—Adhesive materials or arrangements
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明公开了一种阵列基板,包括:基板;在基板的外围区域设置的外围线路;在外围线路上设置的绝缘层,所述绝缘层包括分别位于外围线路的易断部分两侧的过孔;以及在绝缘层上的每个过孔处设置的导电部分,所述导电部分通过所述过孔电连接到所述外围线路。通过具有上述结构的阵列基板,当阵列基板的外围线路断裂时,能够通过将一修补片跨接于断裂部分两侧的导电部分上而使断裂部分两侧的外围线路部分通过修补片电连接,从而能够方便地修复该外围线路的断裂部分,使阵列基板能够正常使用。本发明还提出了一种用于阵列基板的修补片、包括阵列基板的显示面板和一种修复阵列基板的方法。
Description
技术领域
本发明的实施例涉及显示器技术领域,特别涉及一种用于显示器的阵列基板、用于阵列基板的修补片、包含所述阵列基板的显示面板以及修补阵列基板的方法。
背景技术
TFT-LCD显示面板主要包括CF(彩膜)基板和TFT(薄膜晶体管)阵列基板,两个基板采用封框胶(Sealant)在贴合工艺段将四周粘合,形成液晶盒,同时封框胶可以封住盒内液晶。通常,TFT阵列基板包括位于封框胶外侧的突出于CF基板的外围区域,该外围区域用于连接源极和栅极驱动芯片并包括各种用于将外部电信号引入基板内部的外围线路,包括各种控制信号及电压走线,例如帧开启信号线STV、行开启信号线CPV、输出启动信号线OE、栅极开启电压线VGH、栅极关闭电压线VGL等。
由于阵列基板的外围区域为单层结构并暴露于外部,在生产和搬运过程中易于受到外力冲击、摩擦、划伤等,造成外围线路断裂,特别是阵列基板的边角部分更容易出现损伤,导致显示设备显示易常。这种情况在大尺寸显示面板上尤为严重。如果这种损伤不能修复,将会造成生产资源的巨大浪费。因此,实践中存在修复外围线路断裂的阵列基板的需要。
发明内容
鉴于上述问题,本发明的实施例提出了一种阵列基板,通过预先设计阵列基板的结构,当阵列基板的外围线路断裂时,能够方便地修复该外围线路的断裂部分,使阵列基板能够正常使用。本发明还提出了一种用于阵列基板的修补片、一种包括该阵列基板的显示面板和一种修复阵列基板的方法。
本发明的第一方面提供一种阵列基板,包括:基板;在基板的外围区域设置的外围线路;在外围线路上设置的绝缘层,所述绝缘层包括分别位于外围线路的易断部分两侧的过孔;以及在绝缘层上的每个过孔处设置的导电部分,所述导电部分通过所述过孔电连接到所述外围线路。
根据本发明实施例提供的阵列基板,通过在外围线路上方的绝缘层中设置的过孔和在绝缘层上的每个过孔处设置的导电部分,能够将外围线路中易断部分(断裂部分)两侧的外围线路部分电导通至阵列基板的表面,因此当阵列基板内部的外围线路断裂时,便于通过外部修补片连接断裂部分两侧的外围线路部分,从而对断裂的外围线路进行修复,使得阵列基板正常使用。
根据一个实施例,所述外围线路由阵列基板中的数据线引出。
根据一个实施例,在所述外围线路和所述基板之间还设置有另一绝缘层。
根据一个实施例,所述外围线路由阵列基板中的栅极线引出。
根据一个实施例,所述绝缘层包括栅级绝缘层和钝化层。
根据一个实施例,所述导电部分由像素电极层引出。
根据一个实施例,所述外围线路是传输控制信号的信号线或传输电压的电压线。
根据本发明第二方面,提供了一种用于修复根据上述任意实施例的阵列基板的修补片。所述修补片包括导电线路,所述导电线路的形状与阵列基板的包含易断部分的外围线路部分的形状一致;所述修补片被构造成当所述外围线路的易断部分断裂时,所述修补片能够叠加在阵列基板上的与包含断裂部分的外围线路部分对应的部分处,以使修补片上的导电线路电连接外围线路的断裂部分两侧的部分。
因此,利用所述修补片能够方便地修补断裂的外围线路。
根据一个实施例,所述修补片是柔性印刷电路板。
根据一个实施例,所述修补片通过掺杂有金球的各向异性导电胶带粘贴到所述阵列基板。
根据一个实施例,所述修补片的形状与阵列基板的角部的形状一致。
根据本发明另一方面的实施例,提供了一种阵列基板组件,包括上述第一方面的阵列基板和第二方面的修补片。
根据一个实施例,所述的阵列基板组件,还包括掺杂有金球的各向异性导电胶带,用于将修补片粘贴到阵列基板外围结构的破损部分。
根据本发明的第四方面,提供了一种修复阵列基板的方法,所述阵列基板包括基板、在基板的外围区域设置的外围线路和在外围线路上设置的绝缘层,所述方法包括:
S1:通过构图工艺在绝缘层中形成分别位于外围线路的易断部分两侧的过孔;
S2:在形成有所述过孔的绝缘层上形成导电部分,所述导电部分至少形成在在每个过孔处以通过每个过孔电连接到所述外围线路;
S3:制作修补片,所述修补片包括导电线路,所述导电线路的形状与包含易断部分的外围线路部分的形状一致;
S4:将修补片叠加在阵列基板上的与包含断裂部分的外围线路部分对应的部分处,以使修补片上的导电线路电连接外围线路的断裂部分两侧的部分。
根据上述方法,能够方便地修补断裂的外围线路。
根据一个实施例,所述外围线路由阵列基板中的数据线引出,在形成数据线的同时形成外围线路。
根据一个实施例,所述外围线路由阵列基板中的栅级线引出,在形成栅极线的同时形成外围线路。
根据一个实施例,所述导电部分由像素电极引出,在形成像素电极的同时形成导电部分。
根据一个实施例,所述用于修复外围线路的过孔可以在形成阵列基板内部的用于连接栅极和像素电极或连接数据线和像素电极的过孔的同时形成。
根据一个实施例,所述修补片是柔性印刷电路板。
根据一个实施例,通过掺杂有金球的各向异性导电胶带将修补片粘贴到阵列基板外围结构的破损部分。
本发明的第四方面提供一种显示面板,包括根据本发明的第一方面的实施例的阵列基板和与所述阵列基板对盒的彩膜基板。
附图说明
图1是示出根据本发明的一个实施例的阵列基板的示意图;
图2是图1的阵列基板的一个角部的放大图;
图3是沿图2的B-B’线截取的阵列基板的部分剖面示意图;
图4根据本发明的一个实施例的修补片的示意图;
图5是类似于图3的的连接有修补片的阵列基板的角部的放大图;
图6是根据一个实施例的沿图5的C-C’线截取的阵列基板的部分剖面示意图;以及
图7是根据另一个实施例的沿图5的C-C”线截取的阵列基板的部分剖面示意图。
具体实施方式
下面结合附图和实施例,对本发明的具体实施方式作进一步详细描述。
图1示出了根据本发明的一个实施例的阵列基板的平面示意图。如图1所示,阵列基板100包括显示区域109、封框胶区域108和外围区域120。显示区域109对应显示设备的显示图像的部分。封框胶区域108对应用于与CF基板贴合的部分。在外围区域120中设置有外围线路102,用于将来自源极和栅极驱动芯片110和130的控制信号或电压信号等引入到阵列基板100内部。
由于阵列基板100的外围区域120暴露于玻璃基板外部,易于受到外力冲击、摩擦、划伤等而破损,造成外围线路102断裂。图2示意地示出了易于发生破损的阵列基板100的一个角部。角部中的虚线X-X处是最易发生断裂的部分,以下称为易断部分(或断裂部分)。当外围线路102断裂时,阵列基板100不能正常使用。
图1-3的实施例提供了一种当外围线路断裂时易于修复的阵列基板的外围结构。如图1-3所示,阵列基板100包括:玻璃基板101;在基板101上设置的外围线路102,所述外围线路102位于基板101外围区域120中,用于将外部电信号引入阵列基板内部;在外围线路102上设置的绝缘层103,所述绝缘层103包括分别位于外围线路102的易断部分X-X两侧的过孔112a和112b;以及在绝缘层103上的每个过孔112a和112b处设置的导电部分111,所述导电部分111通过所述过孔电连接到所述外围线路102。
为便于图示,图1和2中未示出绝缘层等结构。图2示出了两条外条外围线路102和分别位于每条外围线路102的易断部分X-X的两侧的过孔112a和112b,并且,包含易断部分X-X的外围线路部分具有L形形状。但是,显然外围线路和过孔的数量、形状不受限制。另外,图1和2示出了易断部分X-X每一侧的导电部分111连续覆盖三个过孔,并且易断部分X-X两侧的导电部分不连续。但是,显然,导电部分111可以分别覆盖每个过孔,并且易断部分X-X两侧的导电部分可以连续延伸。
图4示出了用于修补图2所示的阵列基板100的角部的修补片200。如图4所示,修补片200包括导电线路114和支撑所述导电线路114的绝缘层113。导电线路114例如可以为铜线。绝缘层113例如可以为塑料。作为一个例子,所述修补片200可以是柔性印刷电路板。如图4所示,每条导电线路114的形状与图2所示的包含易断部分X-X的外围线路部分的形状一致,即形成L形。所述修补片200的形状也与阵列基板100的角部的形状一致,即形成L形。并且,修补片200的尺寸对应角部的尺寸,其中的导线114的位置和尺寸分别对应于角部中的外围线路的位置和尺寸。
当外围线路102沿图2中的易断部分X-X断裂时,可以将图4所示的修补片200叠加在图2所示的阵列基板的角部,使得修补片200中的导电线路114位于外围线路102正上方。这样,断裂部分X-X两侧的外围线路部分可以经由两侧的过孔112a和112b和导电部分111并通过位于过孔112a和112b之间的修补片200被电导通,从而,阵列基板可以被修复并正常使用。
具体地,可以通过各向异性导电胶带将修补片粘贴在阵列基板上的损伤部分处。例如通过掺杂有金球的双面胶带。因此,能够方便地修复阵列基板的破损。
图5是类似于图3但连接有修补片的阵列基板的角部的放大图。图6是根据一个示例实施例的沿图5的C-C’线截取的阵列基板的部分剖面示意图。图7是根据另一个示例实施例的沿图5的C-C’线截取的阵列基板的部分剖面示意图。为便于图示,图5-7省略了修补片200的绝缘层。
如图6所示,根据本发明的一个实施例,阵列基板100a包括玻璃基板101;在基板101上设置的外围线路102,所述外围线路102由阵列基板中的栅极线引出;在外围线路102和栅级线上设置的栅级绝缘层1031;在栅级绝缘层1031上设置的钝化层1032;在栅级绝缘层1031和钝化层1032中形成分别位于外围线路102的易断部分X-X两侧的过孔112a和112b,栅级绝缘层1031和钝化层1032中的过孔相互连通;以及在栅级绝缘层1031和钝化层1032的每个过孔112处设置的导电部分111,所述导电部分111可以是在钝化层1032上设置的透明导电层的一部分。透明导电层还包括例如像素电极。
外围线路102和栅级线的材料例如可以为Al、Cu等金属,透明导电层的材料例如可以为氧化铟锡ITO。栅级绝缘层1031的材料可以为SiNx、SiO2等,钝化层1032的材料可以为SiNx、SiO2等。
在如图6所示的实施例中,栅级绝缘层1031和钝化层1032对应图3中所示的绝缘层103。另外,图6示出了叠加在导电部分111上方的类似于图4中的修补片102。为便于图示,图中仅示出了修补片200的导电线路114。并且,图6中还示意地示出了用于电连接导电部分111和导电线路114的导电金球115。
图7是根据另一个示例实施例的沿图5的C-C’线截取的阵列基板的部分剖面示意图。如图7所示,阵列基板100a包括玻璃基板101;在基板101上设置的栅级绝缘层1031;在栅级绝缘层1031上设置的外围线路102,所述外围线路102由阵列基板中的数据线引出;在数据线和外围线路102上设置的钝化层1032;在钝化层1032中形成分别位于外围线路102的易断部分X-X两侧的过孔112a和112b;以及在钝化层1032的每个过孔112a和112b处设置的导电部分111,所述导电部分111可以是在钝化层1032上设置的透明导电层的一部分。透明导电层还包括例如像素电极。
外围线路102和栅级线的材料例如可以为Al、Cu等金属,透明导电层的材料例如可以为氧化铟锡ITO。栅级绝缘层1031的材料可以为SiNx、SiO2等,钝化层1032的材料可以为SiNx、SiO2等。
在图7所示的实施例中,钝化层1032对应图3中所示的绝缘层103。同样,图7示出了叠加在导电部分111上方的类似于图4中的修补片200。为便于图示,图中仅示出了修补片200的导电线路114。并且,图7中还示意地示出了用于电连接导电层111和导电线路114的导电金球115。
应当理解,图6和7只是示意示出了阵列基板的外围部分的结构。并且,为便于描述,以上实施例省略了对阵列基板的其它功能结构的描述。但是,本领域技术人员应当理解,阵列基板还包括TFT、像素电极、公共电极、数据线等等其它结构。另外,虽然实施例只是描述了阵列基板的边角部分破损的例子,但是,很显然,本发明的构思可以用于修复阵列基板的其它部分的破损。
本发明上述实施例的阵列基板可以与CF基板组合,形成液晶面板,用于平板电脑、电视机、显示器、笔记本电脑、数码相框等任何具有显示功能的产品或部件。因此,本发明的另一方面的实施例提供了一种显示面板,包括根据以上实施例的阵列基板和与所述阵列基板对盒的彩膜基板。如前所述,由于阵列基板中的外围线路发生断裂后可以方便地进行修复,因此,包括该阵列基板的显示面板的可维护性提高。
以下说明制造根据本发明的一个实施例的修复阵列基板的方法。所述阵列基板例如参见图3包括基板101、在基板101的外围区域设置的外围线路102和在外围线路102上设置的绝缘层103,所述方法包括步骤:
S1:在制作阵列基板的过程中,在形成绝缘层103后,通过构图工艺在绝缘层103中形成分别位于外围线路102的易断部分X-X两侧的过孔112a和112b。具体地,可以通过在绝缘层上涂敷光刻胶,采用掩膜曝光、显影、蚀刻等工艺在绝缘层中形成过孔。
S2:在形成有所述过孔112a和112b的绝缘层102上形成导电部分111,所述导电部分111至少形成在每个过孔112a和112b处以通过每个过孔电连接到所述外围线路102。具体地,可以通过在绝缘层103上沉积例如ITO的导电层,然后涂敷光刻胶,采用掩膜曝光、显影、蚀刻等工艺在绝缘层103中形成导电部分111。
S3:制作修补片,所述修补片包括导电线路,所述导电线路的形状与包含易断部分的外围线路部分的形状一致。例如,可以制作如图4所示的L形的修补片200,用于粘贴到如图2所示的阵列基板的角部。具体地,可以采用柔性印刷电路板制作工艺制作修补片。
S4:将修补片叠加在阵列基板上的与包含断裂部分的外围线路部分对应的部分处,以使修补片上的导电线路电连接外围线路的断裂部分两侧的部分。具体地,可以通过掺杂有金球的各向异性导电胶带将修补片粘贴到阵列基板外围结构的破损部分。
所述外围线路如图6所示可以由阵列基板中的栅级线引出,因此,在制造阵列基板的过程中,可以在形成栅级线的同时形成外围线路。
或者,所述外围线路如图7所示可以由阵列基板中的数据线引出,因此,在制造阵列基板的过程中,可以在形成数据线的同时形成外围线路。
此外,所述导电部分可以由阵列基板中的像素电极引出,因此,在制造阵列基板的过程中,可以在形成像素电极的同时形成导电部分。因此,不必增加专门的在外围线路上方沉积导电部分的工序。
此外,所述用于修复外围线路的过孔可以在形成阵列基板内部的用于连接栅极和像素电极或连接数据线和像素电极的过孔的同时形成,因此,不必增加专门的工序来形成用于修复外围线路的过孔。
因此,本发明实施例提供的修复阵列基板的方法可以方便地修复阵列基板外围线路中的断裂部分,而不必增加很多的工序。
以上说明了本发明的几个实施例。但是,应当理解,实施例仅用于说明本发明的构思,但不用来限制本发明的范围。另外,在描述实施例的过程中,为便于解释,阐述了许多具体的细节以提供对实施例的全面理解。然而明显地,一个或多个实施例在没有这些具体细节的情况下也可以被实施。另一方面,实施例可以包括图中未示出的其它公知的结构和装置。并且,在以上说明中提到的“在……上”不一定表示直接接触。因此,本领域的技术人员可以对实施例做出各种变化和变型,这些变化和变型构成的等同的技术方案也属于本发明的范畴。本发明的专利保护范围应由权利要求限定。
Claims (21)
1.一种阵列基板,包括:
基板;
在基板的外围区域设置的外围线路;
在外围线路上设置的绝缘层,所述绝缘层包括分别位于外围线路的易断部分两侧的过孔;以及
在绝缘层上的每个过孔处设置的导电部分,所述导电部分通过所述过孔电连接到所述外围线路。
2.根据权利要求1所述的阵列基板,其中,所述外围线路由阵列基板中的数据线引出。
3.根据权利要求2所述的阵列基板,其中,在所述外围线路和所述基板之间还设置有另一绝缘层。
4.根据权利要求1所述的阵列基板,其中,所述外围线路由阵列基板中的栅极线引出。
5.根据权利要求4所述的阵列基板,其中,所述绝缘层包括栅级绝缘层和钝化层。
6.根据权利要求1所述的阵列基板,其中,所述导电部分由像素电极层引出。
7.根据权利要求1所述的阵列基板,其中,所述外围线路是传输控制信号的信号线或传输电压的电压线。
8.一种用于修复根据权利要求1-7任一项所述的阵列基板的修补片,所述修补片包括导电线路,所述导电线路的形状与阵列基板的包含易断部分的外围线路部分的形状一致;所述修补片被构造成当所述外围线路的易断部分断裂时,所述修补片能够叠加在阵列基板上的与包含断裂部分的外围线路部分对应的部分处,以使修补片上的导电线路电连接外围线路的断裂部分两侧的部分。
9.根据权利要求8所述的修补片,其中,所述修补片是柔性印刷电路板。
10.根据权利要求9所述的修补片,其中,所述修补片通过掺杂有金球的各向异性导电胶带粘贴到所述阵列基板。
11.根据权利要求10所述的修补片,其中,所述修补片的形状与阵列基板的角部的形状一致。
12.一种阵列基板组件,包括如权利要求1所述的阵列基板和如权利要求8所述的修补片。
13.根据权利要求12所述的阵列基板组件,还包括掺杂有金球的各向异性导电胶带,用于将修补片粘贴到阵列基板外围结构的破损部分。
14.一种修复阵列基板的方法,所述阵列基板包括基板、在基板的外围区域设置的外围线路和在外围线路上设置的绝缘层,所述方法包括:
S1:通过构图工艺在绝缘层中形成分别位于外围线路的易断部分两侧的过孔;
S2:在形成有所述过孔的绝缘层上形成导电部分,所述导电部分至少形成在每个过孔处以通过每个过孔电连接到所述外围线路;
S3:制作修补片,所述修补片包括导电线路,所述导电线路的形状与包含易断部分的外围线路部分的形状一致;
S4:将修补片叠加在阵列基板上的与包含断裂部分的外围线路部分对应的部分处,以使修补片上的导电线路电连接外围线路的断裂部分两侧的部分。
15.根据权利要求14所述的修复阵列基板的方法,其中:
所述外围线路由阵列基板中的数据线引出,在形成数据线的同时形成外围线路。
16.根据权利要求14所述的修复阵列基板的方法,其中:
所述外围线路由阵列基板中的栅级线引出,在形成栅极线的同时形成外围线路。
17.根据权利要求14所述的修复阵列基板的方法,其中:
所述导电部分由像素电极引出,在形成像素电极的同时形成导电部分。
18.根据权利要求14所述的修复阵列基板的方法,其中:所述用于修复外围线路的过孔可以在形成阵列基板内部的用于连接栅极和像素电极或连接数据线和像素电极的过孔的同时形成。
19.根据权利要求14所述的修复阵列基板的方法,其中:
所述修补片是柔性印刷电路板。
20.根据权利要求14所述的修复阵列基板的方法,其中:
通过掺杂有金球的各向异性导电胶带将修补片粘贴到阵列基板外围结构的破损部分。
21.一种显示面板,包括:如权利要求1所述的阵列基板和与所述阵列基板对盒的彩膜基板。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410735902.XA CN104375347B (zh) | 2014-12-04 | 2014-12-04 | 阵列基板、修补片、显示面板和修复阵列基板的方法 |
US14/786,187 US9746731B2 (en) | 2014-12-04 | 2015-05-13 | Array substrate, repairing sheet, display panel and method of repairing array substrate |
PCT/CN2015/078856 WO2016086606A1 (zh) | 2014-12-04 | 2015-05-13 | 阵列基板、修补片、显示面板和修复阵列基板的方法 |
EP15778591.6A EP3229067A4 (en) | 2014-12-04 | 2015-05-13 | Array substrate, repairing patch, display panel, and method for repairing array substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410735902.XA CN104375347B (zh) | 2014-12-04 | 2014-12-04 | 阵列基板、修补片、显示面板和修复阵列基板的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104375347A CN104375347A (zh) | 2015-02-25 |
CN104375347B true CN104375347B (zh) | 2017-06-06 |
Family
ID=52554365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410735902.XA Active CN104375347B (zh) | 2014-12-04 | 2014-12-04 | 阵列基板、修补片、显示面板和修复阵列基板的方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9746731B2 (zh) |
EP (1) | EP3229067A4 (zh) |
CN (1) | CN104375347B (zh) |
WO (1) | WO2016086606A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018205659A1 (zh) * | 2017-05-12 | 2018-11-15 | 京东方科技集团股份有限公司 | 显示面板 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102322762B1 (ko) * | 2014-09-15 | 2021-11-08 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN104375347B (zh) * | 2014-12-04 | 2017-06-06 | 合肥鑫晟光电科技有限公司 | 阵列基板、修补片、显示面板和修复阵列基板的方法 |
CN104766815B (zh) * | 2015-04-27 | 2018-04-17 | 中建材浚鑫科技股份有限公司 | 一种石墨舟外叶片修复方法 |
CN104898333B (zh) * | 2015-06-17 | 2017-07-28 | 合肥鑫晟光电科技有限公司 | 一种阵列基板及其线不良维修方法、显示装置 |
CN104898338B (zh) * | 2015-07-01 | 2017-11-14 | 京东方科技集团股份有限公司 | 一种阵列基板及显示装置 |
CN107024786B (zh) * | 2017-05-02 | 2021-03-23 | 京东方科技集团股份有限公司 | 一种显示基板的金属线裂纹修复方法 |
TWI679754B (zh) * | 2018-11-26 | 2019-12-11 | 友達光電股份有限公司 | 元件基板 |
CN111768702B (zh) * | 2019-07-24 | 2022-03-29 | 友达光电股份有限公司 | 可挠性显示器 |
CN114114973B (zh) * | 2020-09-01 | 2024-01-23 | 京东方科技集团股份有限公司 | 显示面板双片生产控制方法及相关设备 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3227757B2 (ja) * | 1992-02-20 | 2001-11-12 | セイコーエプソン株式会社 | 半導体装置の修正方法 |
JP3167633B2 (ja) * | 1996-12-16 | 2001-05-21 | 富士通株式会社 | 液晶表示装置 |
KR100734232B1 (ko) * | 1999-12-31 | 2007-07-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 제조방법 |
JP2001257350A (ja) * | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
KR101119177B1 (ko) | 2005-01-27 | 2012-03-20 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조방법 |
KR20070037892A (ko) | 2005-10-04 | 2007-04-09 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 |
CN101399272B (zh) * | 2007-09-27 | 2011-10-12 | 北京京东方光电科技有限公司 | 薄膜晶体管阵列基板 |
CN101655640B (zh) | 2008-08-19 | 2011-07-20 | 北京京东方光电科技有限公司 | 薄膜晶体管阵列基板及制造、修复方法 |
CN101788729A (zh) * | 2009-01-23 | 2010-07-28 | 统宝光电股份有限公司 | 液晶显示装置及其修补的方法 |
TW201031959A (en) * | 2009-02-26 | 2010-09-01 | Chunghwa Picture Tubes Ltd | Display panel and repair method thereof |
CN101581865B (zh) * | 2009-06-22 | 2011-01-19 | 友达光电股份有限公司 | 显示面板及其修补方法 |
CN103022145B (zh) * | 2012-10-31 | 2016-11-16 | 京东方科技集团股份有限公司 | 阵列基板、显示装置及制备方法 |
CN103293812B (zh) * | 2013-06-03 | 2016-04-06 | 合肥京东方光电科技有限公司 | 一种阵列基板及其修复方法和显示装置 |
CN103353679B (zh) * | 2013-06-20 | 2015-08-26 | 京东方科技集团股份有限公司 | 一种阵列基板、显示装置及阵列基板的修复方法 |
CN104375347B (zh) | 2014-12-04 | 2017-06-06 | 合肥鑫晟光电科技有限公司 | 阵列基板、修补片、显示面板和修复阵列基板的方法 |
-
2014
- 2014-12-04 CN CN201410735902.XA patent/CN104375347B/zh active Active
-
2015
- 2015-05-13 EP EP15778591.6A patent/EP3229067A4/en not_active Withdrawn
- 2015-05-13 WO PCT/CN2015/078856 patent/WO2016086606A1/zh active Application Filing
- 2015-05-13 US US14/786,187 patent/US9746731B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018205659A1 (zh) * | 2017-05-12 | 2018-11-15 | 京东方科技集团股份有限公司 | 显示面板 |
Also Published As
Publication number | Publication date |
---|---|
US9746731B2 (en) | 2017-08-29 |
EP3229067A4 (en) | 2018-08-08 |
CN104375347A (zh) | 2015-02-25 |
WO2016086606A1 (zh) | 2016-06-09 |
EP3229067A1 (en) | 2017-10-11 |
US20160342053A1 (en) | 2016-11-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104375347B (zh) | 阵列基板、修补片、显示面板和修复阵列基板的方法 | |
US11604389B2 (en) | Flexible display apparatus | |
US9759966B2 (en) | Array substrate and method of manufacturing the same, and display device | |
CN105182646B (zh) | 阵列基板、显示装置 | |
CN203365869U (zh) | 阵列基板及显示装置 | |
CN106297566A (zh) | 显示装置及其制造方法 | |
CN203133441U (zh) | 一种显示面板及显示装置 | |
US20160372490A1 (en) | Array substrate and manufacturing method thereof, and display panel | |
CN104460070A (zh) | 显示面板及其制作方法、显示装置 | |
CN103513459A (zh) | 阵列基板及其制备方法、显示装置及其制备方法 | |
CN103021940B (zh) | 阵列基板及其制造方法、显示装置 | |
CN206340298U (zh) | 一种基板及显示装置 | |
CN105226068A (zh) | 一种双面显示基板及其制备方法和显示装置 | |
CN105489634A (zh) | 一种显示面板及其制造方法、以及显示装置 | |
WO2019000912A1 (zh) | 显示面板及其制造方法、显示装置 | |
CN106293255A (zh) | 一种触控基板及触控显示装置 | |
CN104460155A (zh) | 一种显示面板、显示面板的制造方法及显示器 | |
CN103296021A (zh) | Tft阵列基板 | |
CN104656327A (zh) | 一种阵列基板及液晶显示面板 | |
CN105096753A (zh) | 一种阵列基板、其制作方法及显示装置 | |
CN105093729A (zh) | 阵列基板及其制作方法、显示装置 | |
KR20080076554A (ko) | 표시 장치 및 그 제조 방법 | |
CN106200153A (zh) | 一种液晶显示装置 | |
CN203519954U (zh) | 阵列基板及显示装置 | |
CN105700723B (zh) | 一种具有触控装置的有机发光显示器及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |