WO2014201730A1 - 掩膜板和阵列基板的制作方法 - Google Patents
掩膜板和阵列基板的制作方法 Download PDFInfo
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- WO2014201730A1 WO2014201730A1 PCT/CN2013/078589 CN2013078589W WO2014201730A1 WO 2014201730 A1 WO2014201730 A1 WO 2014201730A1 CN 2013078589 W CN2013078589 W CN 2013078589W WO 2014201730 A1 WO2014201730 A1 WO 2014201730A1
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- Prior art keywords
- fan
- line width
- lines
- predetermined line
- impression
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 239000011521 glass Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 230000000873 masking effect Effects 0.000 claims description 5
- 238000005452 bending Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
Definitions
- the present invention relates to the field of display manufacturing, and in particular to a mask, and to a method of fabricating an array substrate.
- Display panel for manufacturing displays including LCD (Liquid Crystal) Display, liquid crystal display panels and OLED (Organic Light-Emitting Diode) panels all require a photolithography process to form a circuit.
- LCD Liquid Crystal
- OLED Organic Light-Emitting Diode
- the photolithography process mainly includes four steps of photoresist coating, exposure, photoresist development and etching. After forming a metal layer on the glass substrate, photoresist coating is started, and a photoresist layer is formed on the metal layer; then the photoresist layer is exposed; after the exposed photoresist layer is developed, the photoresist layer is formed in advance.
- the circuit pattern is designed; finally, the metal layer is etched, the metal without photoresist protection is etched away, and the remaining metal forms the circuit.
- the display panel includes a valid display area (AA, Active) Area) and the non-effective display area surrounding the effective display area.
- the effective display area has various signal traces, such as scan lines and data lines.
- the non-effective county has fan-out leads, and the fan-out leads are connected to the above signals. The other end is connected to the peripheral driver chip.
- FIG. 1 it is a schematic structural view of a display panel of the prior art, and the fan-out leads are also enlarged in the figure. Since the fan-out lead corresponds to the connection signal trace, when the signal is transmitted, the fan-out lead will act as a signal load.
- the effective length of the peripheral fan-out lead is greater than the intermediate fan-out lead, and the peripheral fan
- the resistance of the lead wire will be larger than the middle fan lead wire, so that different signal wires have different loads, which will affect the signal transmission, resulting in uneven display of the image of the display. This phenomenon is called display unevenness (Fanout). Mura) phenomenon.
- the fan-out leads in the middle are bent, which in turn increases the effective length of the intermediate fan-out leads and reduces the difference in resistance from the peripheral fan-out leads.
- Part (a) is a desired shape in which the fan-out lead forms a front curved portion, and the line width of the curved portion is equal to the line width elsewhere.
- Part (b) is the actual shape of the bent portion after the fan-out lead is formed under the existing photolithography process, and the line width of the curved portion is larger than the line width elsewhere.
- the reason for this is that in the exposure step, the optical path is difficult to achieve complete collimation, there will be a small amount of lateral light, and the exposed area will simultaneously illuminate the collimated light and the lateral light, but the part (b) of the A
- the A area is surrounded by three sides, that is, the A area has three sides that are not irradiated with the lateral light, and the other exposed areas can illuminate the collimated light and the lateral light, so
- the photosensitive intensity of the A region is weaker than that of the other exposed regions, and the chemical reaction of the photoresist is slow, which causes the development speed and etching speed of the A region to be slower than other exposed regions during the subsequent development and etching steps, and finally the curved portion of the fan lead is bent.
- the area of the A region is increased, the line width of the curved portion of the fan-out lead is increased, and the resistance is correspondingly small, causing the resistance difference to further increase.
- a primary object of the present invention is to provide a mask and an array substrate manufacturing method capable of reducing a difference in resistance between fan-out leads.
- a technical solution adopted by the present invention is to provide a mask for fabricating fan-out leads in an ineffective display area on an array substrate, the mask comprising a fan-out lead pattern and a fan-out lead
- the pattern has a plurality of fan-out impression lines, the effective lengths of the plurality of fan-out impression lines are equal, each fan-out impression line has a predetermined line width, and at least a part of the fan-out impression lines of the plurality of fan-out impression lines have at least A curved portion, the plurality of curved portions are continuously arranged in an S shape, and a line width of the curved portion of the same fan-out impression line is smaller than the predetermined line width of the fan-out impression line.
- the predetermined line widths of the fan-out impression lines are equal.
- the predetermined line width of the fan-out impression line in the middle of the fan-out lead pattern is smaller than the predetermined line width of the fan-out impression line at the edge of the fan-out lead pattern.
- the predetermined line width of the plurality of fan-out impression lines gradually increases in the direction from the middle to the edge of the fan-out lead pattern.
- another technical solution adopted by the present invention is to provide a mask for fabricating fan-out leads in an ineffective display area on an array substrate, the mask comprising a fan-out lead pattern, fan-out
- the lead pattern has a plurality of fan-out impression lines, each of the fan-out impression lines has a predetermined line width, and at least a portion of the plurality of fan-out impression lines have at least one curved portion and the same fan-out impression line
- the line width of the curved portion is smaller than the predetermined line width of the fan-out impression line.
- the plurality of curved portions are arranged in an S-shape in a continuous manner.
- the predetermined line widths of the fan-out impression lines are equal.
- the predetermined line width of the fan-out impression line in the middle of the fan-out lead pattern is smaller than the predetermined line width of the fan-out impression line at the edge of the fan-out lead pattern.
- the predetermined line width of the plurality of fan-out impression lines gradually increases in the direction from the middle to the edge of the fan-out lead pattern.
- the effective lengths of the plurality of fan-out impression lines are equal.
- another technical solution adopted by the present invention is to provide a method for fabricating an array substrate, comprising: providing a glass substrate, sequentially forming a metal layer and a photoresist layer on the glass substrate; providing any of the above The mask plate is used to expose the glass substrate by using a mask plate, wherein the exposure speed of the photoresist layer corresponding to the position of the curved portion is smaller than the exposure speed of the other position; the glass substrate is developed and transferred on the photoresist layer.
- a development speed of the position of the photoresist layer corresponding to the curved portion is smaller than a development speed of the other position; etching the metal layer to form a fan-out lead on the glass substrate, wherein the metal layer corresponds to the position of the curved portion
- the etching speed is lower than the etching speed at other positions such that the line width of the fan-out lead corresponding to the curved portion is less than or equal to a predetermined line width.
- the photoresist layer is formed by a positive photoresist, and the fan-out lead pattern is a non-hollow pattern.
- the photoresist layer is formed by a negative photoresist, and the fan-out lead pattern is a hollow pattern.
- the line width of the curved portion of the fan-out impression line is smaller than the predetermined line width of the fan-out impression line, and the photosensitive strength of the position of the photoresist layer corresponding to the curved portion is obtained. Further, the exposure intensity is smaller than that of other positions, and after development and etching, the line width of the corresponding curved portion of the fan-out lead can be made smaller than or equal to a predetermined line width, which can reduce the difference in resistance between the fan-out leads and eliminate display unevenness. .
- FIG. 1 is a schematic structural view of a display panel of the prior art, and the fan-out leads are also enlarged in the figure;
- FIG. 3 is a schematic structural view of an embodiment of a mask according to the present invention.
- Figure 4 is an enlarged schematic view showing a fan-out stamp line on the mask shown in Figure 3;
- FIG. 5 is a schematic flow chart of an embodiment of a method for fabricating an array substrate of the present invention.
- Fig. 6 is a view showing the effect of performing an exposure step and a developing step on the photoresist layer on the glass substrate in the manufacturing method shown in Fig. 5.
- FIG. 3 is a schematic structural view of an embodiment of a mask according to the present invention.
- 4 is an enlarged schematic view showing a fan-out stamp line on the mask shown in FIG.
- the mask 30 is used to fabricate fan-out leads in the ineffective display area on the array substrate.
- the masking plate 30 includes a fan-out lead pattern 31 corresponding to the fan-out lead in the non-effective display area, that is, the exposure is performed by the mask 31, and the fan-out lead pattern 31 can be turned into a fan-out lead. pattern.
- the fan-out lead pattern 31 has a fan shape, and the formed fan-out leads are also fan-shaped.
- the fan-out lead pattern 31 has a plurality of fan-out stamp lines 310, each fan-out stamp line 310 has a predetermined line width L1, and the predetermined line width L1 refers to a line width conforming to a design value. At least a portion of the fan-out impression lines 310 of the plurality of fan-out impression lines 310 have at least one curved portion 311. Since the fan-out impression lines 310 correspond to the fan-out leads, the length of the fan-out impression lines 310 determines the fan-out. The length of the lead, if the effective length of each of the fan-out stamp lines 310 is inconsistent, the effective length of each of the fan-out leads is inconsistent, resulting in an increase in the resistance difference between the fan-out leads.
- the curved portion 311 can increase the effective length of the fan-out impression line 310. In the present embodiment, the effective lengths of the plurality of fan-out impression lines 310 are equal.
- the line width L2 of the curved portion 311 of the same fan-out stamp line 310 is smaller than the predetermined line width L1 of the fan-out stamp line 310.
- the line width of each position thereof is a predetermined line width L1.
- the plurality of curved portions 311 are continuously arranged in an S shape (as shown in FIG. 4).
- the predetermined line width L1 of each fan-out stamp line 310 may take the same value or may take a different value. In the present embodiment, the predetermined line widths L1 of the respective fan-out stamp lines 310 are equal. In other embodiments, the predetermined line width L1 of the fan-out impression line 310 in the middle of the fan-out lead pattern 31 is smaller than the predetermined line width L1 of the fan-out impression line 310 at the edge of the fan-out lead pattern 31. Specifically, the predetermined line width L1 of the plurality of fan-out stamp lines 310 gradually increases in the direction toward the edge of the fan-out lead pattern 31.
- the effective length of the fan-out stamp line 310 in the middle of the fan-out lead pattern 31 is smaller than the effective length of the fan-out stamp line 310 at the edge of the fan-out lead pattern 31, if the fan-out stamp in the middle of the lead pattern 31 is fanned out
- the predetermined line width L1 of the line 310 is smaller than the predetermined line width L1 of the fan-out stamp line 310 at the edge of the fan-out lead pattern 31, and the formed fan-out lead has a unit length resistance in the middle portion larger than the unit length resistance at the edge, which can be reduced. The difference in resistance between the fan-out leads.
- FIG. 5 is a schematic flow chart of an embodiment of a method for fabricating an array substrate according to the present invention.
- the production method includes the following steps:
- Step S51 providing a glass substrate, and sequentially forming a metal layer and a photoresist layer on the glass substrate.
- the metal layer may be formed by a deposition process or the like, and the photoresist layer may be formed by a coating process or the like.
- Step S52 providing a mask for exposing the glass substrate by using a mask, wherein the exposure speed of the photoresist layer corresponding to the position of the curved portion is smaller than the exposure speed of the other positions.
- the mask is the mask 30 of the above embodiment.
- the photoresist layer is formed of a positive photoresist
- the fan-out wiring pattern 31 is a non-hollow pattern. That is to say, the photoresist that needs to form the fan-out lead does not need to be irradiated with light.
- the photosensitive layer corresponding to the curved portion 311 is weak in intensity, so that a part of the photoresist inside the curved portion 311 is chemically weak.
- FIG. 6 is a comparison view of the effect of the exposure step and the development step of the photoresist layer on the glass substrate in the manufacturing method shown in FIG. 5.
- Part (a) of the figure is a schematic diagram showing the effect of the exposure step of the photoresist layer.
- the position of the corresponding curved portion 311 on the photoresist layer that is, the B region, is surrounded by the three-sided photoresist, and the lateral light cannot be irradiated, the photosensitive intensity is weak, and the photoresist of the B region is chemically weak.
- the reaction is slow and the exposure speed is less than the exposure speed at other locations.
- Step S53 developing the glass substrate, and transferring a fan-out lead pattern on the photoresist layer, wherein the development speed of the position of the photoresist layer corresponding to the curved portion is smaller than the development speed of the other position.
- part (b) of Fig. 6 is a schematic view showing the effect of the development step of the photoresist layer. Since the photoresist chemical reaction in the region B in (a) is very slow, the chemical properties thereof are substantially unchanged, and the development speed is slow in development and is not washed away by the developer, and this portion of the photoresist is retained. Thereby, the photoresist of the portion (b) corresponds to an increase in the line width of the curved portion 311.
- Step S54 etching the metal layer to form a fan-out lead on the glass substrate, wherein the etching speed of the metal layer corresponding to the position of the curved portion is smaller than the etching speed of the other position, so that the line width of the fan-out lead corresponding to the curved portion is less than or Equal to the predetermined line width.
- the etching of the metal protected by the B region is slow at the time of etching, and the pattern of the remaining metal is the same as that of the fan-out lead pattern 31, and
- the line width of the fan-out lead corresponding to the curved portion 311 is less than or equal to the predetermined line width L1, so that the difference in resistance between the fan-out leads will be reduced, and display unevenness can be eliminated.
- the photoresist layer may be formed of a negative photoresist and the fan-out lead pattern 31 is a hollow pattern. Regardless of whether it is a positive photoresist or a negative photoresist, the photoresist of the B region is retained, so that the line widths of the respective portions of the fan-out leads on the array substrate are equal, and even the line width of the fan-out lead corresponding to the curved portion 311 is smaller than The line width is reserved.
- the line width of the curved portion of the fan-out impression line is smaller than the predetermined line width of the fan-out impression line, and the photosensitive strength of the position of the photoresist layer corresponding to the curved portion is
- the exposure light intensity smaller than other positions can make the line width of the corresponding curved portion of the fan-out lead less than or equal to the predetermined line width after development and etching, and can reduce the difference in resistance between the fan-out leads and eliminate display unevenness.
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Abstract
Description
Claims (18)
- 一种掩膜板,用于制作阵列基板上非有效显示区内的扇出引线,其中,所述掩膜板包括扇出引线图案,所述扇出引线图案具有多条扇出印模线,所述多条扇出印模线的有效长度相等,各所述扇出印模线具有预定线宽,所述多条扇出印模线中至少部分所述扇出印模线具有至少一个弯曲部分,多个所述弯曲部分呈S形连续排布,并且同一扇出印模线的所述弯曲部分的线宽小于所述扇出印模线的所述预定线宽。
- 根据权利要求1所述的掩膜板,其中,各所述扇出印模线的预定线宽相等。
- 根据权利要求1所述的掩膜板,其中,所述扇出引线图案中部的扇出印模线的预定线宽小于所述扇出引线图案边缘的扇出印模线的预定线宽。
- 根据权利要求3所述的掩膜板,其中,所述多条扇出印模线的所述预定线宽沿所述扇出引线图案的中部向边缘的方向逐渐增大。
- 一种掩膜板,用于制作阵列基板上非有效显示区内的扇出引线,其中,所述掩膜板包括扇出引线图案,所述扇出引线图案具有多条扇出印模线,各所述扇出印模线具有预定线宽,所述多条扇出印模线中至少部分所述扇出印模线具有至少一个弯曲部分,并且同一扇出印模线的所述弯曲部分的线宽小于所述扇出印模线的所述预定线宽。
- 根据权利要求5所述的掩膜板,其中,多个所述弯曲部分呈S形连续排布。
- 根据权利要求5所述的掩膜板,其中,各所述扇出印模线的预定线宽相等。
- 根据权利要求5所述的掩膜板,其中,所述扇出引线图案中部的扇出印模线的预定线宽小于所述扇出引线图案边缘的扇出印模线的预定线宽。
- 根据权利要求8所述的掩膜板,其中,所述多条扇出印模线的所述预定线宽沿所述扇出引线图案的中部向边缘的方向逐渐增大。
- 根据权利要求5所述的掩膜板,其中,所述多条扇出印模线的有效长度相等。
- 一种阵列基板的制作方法,其中,所述制作方法包括:提供一玻璃基板,在所述玻璃基板上依次形成金属层和光阻层;提供一掩膜板,利用所述掩膜板对所述玻璃基板进行曝光,其中,所述光阻层对应所述弯曲部分的位置的曝光速度小于其它位置的曝光速度,所述掩膜板包括扇出引线图案,所述扇出引线图案具有多条扇出印模线,各所述扇出印模线具有预定线宽,所述多条扇出印模线中至少部分所述扇出印模线具有至少一个弯曲部分,并且同一扇出印模线的所述弯曲部分的线宽小于所述扇出印模线的所述预定线宽;对所述玻璃基板进行显影,在所述光阻层上转印出所述扇出引线图案,其中,所述光阻层对应所述弯曲部分的位置的显影速度小于其它位置的显影速度;对所述金属层进行蚀刻,在所述玻璃基板上形成所述扇出引线,其中,所述金属层对应所述弯曲部分的位置的蚀刻速度小于其它位置的蚀刻速度,以使得所述扇出引线对应所述弯曲部分的线宽小于或等于所述预定线宽。
- 根据权利要求11所述的制作方法,其中,所述光阻层由正性光阻形成,所述扇出引线图案为非镂空图案。
- 根据权利要求11所述的制作方法,其中,所述光阻层由负性光阻形成,所述扇出引线图案为镂空图案。
- 根据权利要求11所述的制作方法,其中,多个所述弯曲部分呈S形连续排布。
- 根据权利要求11所述的制作方法,其中,各所述扇出印模线的预定线宽相等。
- 根据权利要求11所述的制作方法,其中,所述扇出引线图案中部的扇出印模线的预定线宽小于所述扇出引线图案边缘的扇出印模线的预定线宽。
- 根据权利要求16所述的制作方法,其中,所述多条扇出印模线的所述预定线宽沿所述扇出引线图案的中部向边缘的方向逐渐增大。
- 根据权利要求11所述的制作方法,其中,所述多条扇出印模线的有效长度相等。
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US20140377690A1 (en) | 2014-12-25 |
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