JP2016530547A - マスクとマトリックス基板の製作方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000011159 matrix material Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 55
- 239000011521 glass Substances 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims 6
- 230000000694 effects Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- Preparing Plates And Mask In Photomechanical Process (AREA)
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Abstract
Description
31 ファンアウト配線パターン
310 ファンアウト印刷線
311 湾曲部分
Claims (18)
- マトリックス基板上の非有効表示区域内にファンアウト配線を製作することに用いられるマスクであって、該マスクはファンアウト配線パターンを含み、該ファンアウト配線パターンは複数本のファンアウト印刷線を含み、該複数本のファンアウト印刷線の有効長さは一致し、前記各ファンアウト印刷線は所定の幅を有しており、前記複数本のファンアウト印刷線において、少なくとも一部分のファンアウト印刷線は少なくとも1個の湾曲部分を具備し、該複数個の湾曲部分はS形に順番に配置され、1本のファンアウト印刷線において、前記湾曲部分の幅は前記ファンアウト印刷線の前記所定の幅より小さいマスク。
- 前記各ファンアウト印刷線の所定の幅は一致する請求項1に記載のマスク。
- 前記ファンアウト配線パターンの中央部に位置するファンアウト印刷線の所定の幅は、前記ファンアウト配線パターンの辺縁部に位置するファンアウト印刷線の所定の幅より小さい請求項1に記載のマスク。
- 前記複数本のファンアウト印刷線の前記所定の幅は、前記ファンアウト配線パターンの中央部から辺縁部に向かって逓増する形状に設けられる請求項3に記載のマスク。
- マトリックス基板上の非有効表示区域内にファンアウト配線を製作することに用いられるマスクであって、該マスクはファンアウト配線パターンを含み、該ファンアウト配線パターンは複数本のファンアウト印刷線を含み、前記各ファンアウト印刷線は所定の幅を有しており、前記複数本のファンアウト印刷線において、少なくとも一部分のファンアウト印刷線は少なくとも1個の湾曲部分を具備し、1本のファンアウト印刷線において、前記湾曲部分の幅は前記ファンアウト印刷線の前記所定の幅より小さいマスク。
- 前記複数個の湾曲部分はS形に順番に配置される請求項5に記載のマスク。
- 前記各ファンアウト印刷線の所定の幅は一致する請求項5に記載のマスク。
- 前記ファンアウト配線パターンの中央部に位置するファンアウト印刷線の所定の幅は、前記ファンアウト配線パターンの辺縁部に位置するファンアウト印刷線の所定の幅より小さい請求項5に記載のマスク。
- 前記複数本のファンアウト印刷線の前記所定の幅は、前記ファンアウト配線パターンの中央部から辺縁部に向かって逓増する形状に設けられる請求項8に記載のマスク。
- 前記複数本のファンアウト印刷線の有効長さは一致する請求項5に記載のマスク。
- マトリックス基板の製作方法であって、該製作方法は、
ガラス基板を用意し、該ガラス基板上に金属層とフォトレジスト層を順番に形成するステップと、
マスクを用意し、該マスクを利用してガラス基板に対して露光を行うステップであって、前記湾曲部分に対応する前記フォトレジスト層の部分の露光速度は他の部分の露光速度より遅く、前記マスクはファンアウト配線パターンを含み、該ファンアウト配線パターンは複数本のファンアウト印刷線を含み、該各ファンアウト印刷線は所定の幅を有しており、前記複数本のファンアウト印刷線において、少なくとも一部分のファンアウト印刷線は少なくとも1個の湾曲部分を具備し、1本のファンアウト印刷線において、前記湾曲部分の幅は前記ファンアウト印刷線の前記所定の幅より小さいステップと、
前記ガラス基板に現象を行うことにより、前記フォトレジスト層上に前記ファンアウト配線パターンを形成するステップであって、前記湾曲部分に対応する前記フォトレジスト層の部分の現象速度が他の部分の現象速度より遅いステップと、
前記金属層をエッチングすることにより、前記ガラス基板上に前記ファンアウト配線を形成するステップであって、前記湾曲部分に対応する前記金属層の部分のエッチング速度が他の部分のエッチング速度より小さいことにより、前記湾曲部分に対応するファンアウト配線の幅を前記所定の幅より小さくするか或いは等しくするステップとを含むマトリックス基板の製作方法。 - 前記フォトレジスト層はポジ型フォトレジストで形成され、前記ファンアウト配線パターンは非貫通形パターンである請求項11に記載の製作方法。
- 前記フォトレジスト層はネガ型フォトレジストで形成され、前記ファンアウト配線パターンは貫通形パターンである請求項11に記載の製作方法。
- 前記複数個の湾曲部分はS形に順番に配置される請求項11に記載の製作方法。
- 前記各ファンアウト印刷線の所定の幅は一致する請求項11に記載の製作方法。
- 前記ファンアウト配線パターンの中央部に位置するファンアウト印刷線の所定の幅は、前記ファンアウト配線パターンの辺縁部に位置するファンアウト印刷線の所定の幅より小さい請求項11に記載の製作方法。
- 前記複数本のファンアウト印刷線の前記所定の幅は、前記ファンアウト配線パターンの中央部から辺縁部に向かって逓増する形状に設けられる請求項16に記載の製作方法。
- 前記複数本のファンアウト印刷線の有効長さは一致する請求項11に記載の製作方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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CN201310248034.8 | 2013-06-20 | ||
CN201310248034.8A CN103324035B (zh) | 2013-06-20 | 2013-06-20 | 掩膜板和阵列基板的制作方法 |
PCT/CN2013/078589 WO2014201730A1 (zh) | 2013-06-20 | 2013-07-01 | 掩膜板和阵列基板的制作方法 |
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JP2016530547A true JP2016530547A (ja) | 2016-09-29 |
JP6246916B2 JP6246916B2 (ja) | 2017-12-13 |
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US (1) | US9110375B2 (ja) |
JP (1) | JP6246916B2 (ja) |
KR (1) | KR101708158B1 (ja) |
CN (1) | CN103324035B (ja) |
GB (1) | GB2529790B (ja) |
RU (1) | RU2619817C1 (ja) |
WO (1) | WO2014201730A1 (ja) |
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JP2018158941A (ja) * | 2013-08-02 | 2018-10-11 | インスティチュート パスツール コリア | 抗感染症化合物 |
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CN104252098B (zh) * | 2014-09-18 | 2019-03-01 | 京东方科技集团股份有限公司 | 相移掩膜板及其制作方法、阵列基板及其制作方法 |
KR102458683B1 (ko) * | 2015-08-13 | 2022-10-26 | 삼성디스플레이 주식회사 | 어레이 기판 |
CN109698216A (zh) * | 2017-10-20 | 2019-04-30 | 昆山维信诺科技有限公司 | 柔性显示屏 |
CN111682054B (zh) * | 2020-06-24 | 2023-01-10 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及显示装置 |
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- 2013-07-01 JP JP2016520232A patent/JP6246916B2/ja active Active
- 2013-07-01 GB GB1522338.1A patent/GB2529790B/en active Active
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GB2529790B (en) | 2019-12-11 |
WO2014201730A1 (zh) | 2014-12-24 |
JP6246916B2 (ja) | 2017-12-13 |
KR20160018708A (ko) | 2016-02-17 |
RU2619817C1 (ru) | 2017-05-18 |
CN103324035A (zh) | 2013-09-25 |
US20140377690A1 (en) | 2014-12-25 |
GB2529790A (en) | 2016-03-02 |
KR101708158B1 (ko) | 2017-02-17 |
GB201522338D0 (en) | 2016-02-03 |
US9110375B2 (en) | 2015-08-18 |
CN103324035B (zh) | 2015-07-01 |
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