WO2017185438A1 - 一种掩膜版及彩色滤光片基板的制备方法 - Google Patents

一种掩膜版及彩色滤光片基板的制备方法 Download PDF

Info

Publication number
WO2017185438A1
WO2017185438A1 PCT/CN2016/083093 CN2016083093W WO2017185438A1 WO 2017185438 A1 WO2017185438 A1 WO 2017185438A1 CN 2016083093 W CN2016083093 W CN 2016083093W WO 2017185438 A1 WO2017185438 A1 WO 2017185438A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
semi
exposure
substrate
region
Prior art date
Application number
PCT/CN2016/083093
Other languages
English (en)
French (fr)
Inventor
贺晖
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US15/109,029 priority Critical patent/US10345693B2/en
Publication of WO2017185438A1 publication Critical patent/WO2017185438A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/22—Absorbing filters
    • G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method for preparing a mask and a color filter substrate.
  • the accuracy of the black matrix that affects the clarity and size of the display is also required.
  • scanning exposure and proximity exposure are usually employed. Among them, the scanning exposure precision is higher, but the manufacturing cost is higher because of the higher cost, so most companies will adopt the proximity exposure mode, but the mask used in the proximity exposure mode is the "light transmission area - the light shielding area".
  • the structure is such that the exposed light is directly in contact with the unexposed photoresist, and the dimensional accuracy of the photoresist is affected by the difficulty in controlling the time during the subsequent development, thereby making the dimensional accuracy of the formed black matrix pattern low.
  • the technical problem that is mainly solved by the present invention is to provide a mask which can improve the accuracy of the black matrix and the sharpness of the display panel when the black matrix is fabricated.
  • a mask version including:
  • a plurality of semi-transmissive portions are respectively disposed adjacent to both side edges of the plurality of the light shielding portions, wherein between the two adjacent ones of the light shielding portions, two adjacent semi-transmissive portions are Forming a light transmissive region;
  • the material of the substrate is quartz
  • the material of the light shielding portion is chromium
  • the material of the semi-transmissive portion is a material used for a gray tone mask or a halftone mask.
  • a mask including:
  • a plurality of semi-transmissive portions are respectively disposed adjacent to both side edges of the plurality of the light shielding portions, wherein between the two adjacent ones of the light shielding portions, two adjacent semi-transmissive portions are A light transmitting region is formed therebetween.
  • the width of the transparent region is greater than the width of the semi-transmissive portion.
  • the material of the substrate is quartz, and the material of the light shielding portion is chromium.
  • the material of the semi-transmissive portion is a material used for a gray tone mask or a halftone mask.
  • another technical solution provided by the present invention is to provide a method for preparing a color filter substrate, comprising forming a black matrix on a substrate, wherein the black matrix is formed on the substrate. Steps, including:
  • the mask version comprises:
  • a plurality of semi-transmissive portions are respectively disposed adjacent to both side edges of the plurality of the light shielding portions, wherein between the two adjacent ones of the light shielding portions, two adjacent semi-transmissive portions are A light transmitting region is formed therebetween.
  • the black photoresist material layer is divided into a first exposure area, a second exposure area, and a third exposure area after exposure, and the first exposure area corresponds to the light shielding part of the mask,
  • the second exposure area corresponds to the semi-transmissive portion of the mask, and the third exposure area corresponds to the transparent area of the mask, wherein the third exposure area, the second exposure area, and the first exposure area
  • the amount of exposure decreases in turn.
  • the solubility of the first exposure zone, the second exposure zone and the third exposure zone under the same conditions is sequentially decreased.
  • the performing the developing to form the black matrix on the base substrate comprises:
  • the exposed substrate is placed in a developing solution to remove the first exposed region and the second exposed region, leaving the third exposed region to form the black matrix.
  • the width of the black matrix is equal to the width of the light transmissive area on the mask.
  • the material of the semi-transmissive portion is a material used for a gray tone mask or a halftone mask.
  • the mask provided by the present invention is provided with two translucent transparent portions between the light shielding portion and the light transmitting region, and the exposure is performed using the mask plate.
  • the exposure amount of the black photoresist material layer corresponding to the semi-transmissive portion is smaller than the exposure amount of the black photoresist material layer corresponding to the transparent region, so that the black photoresist material layer corresponding to the semi-transmissive portion is developed.
  • the solubility is between the corresponding light-transmitting region and the solubility of the light-shielding portion, thereby functioning as a buffer, and it is easy to improve the development accuracy by controlling the development time.
  • the black photoresist material layer corresponding to the semi-transmissive portion can function as a buffer, it is convenient to set the width of the light-transmitting region to be smaller than the width of the light-transmitting region of the mask in the prior art, thereby making The resulting black matrix has a smaller width, thereby increasing the number of sub-pixels in the area unit of the color filter, thereby improving the definition of the display panel.
  • FIG. 1 is a schematic cross-sectional structural view of a mask of the present invention
  • FIG. 2 is a schematic flow chart of a method for preparing a color filter substrate of the present invention
  • FIG. 3 is a schematic view showing a black photoresist material layer formed in a method of fabricating a color filter substrate of the present invention
  • FIG. 4 is a schematic view showing exposure of a black photoresist material layer in a method of fabricating a color filter substrate of the present invention
  • FIG. 5 is a schematic view showing a black photoresist material layer after exposure in a method for preparing a color filter substrate of the present invention
  • Fig. 6 is a schematic view showing development in a method of producing a color filter substrate of the present invention.
  • a mask 100 provided by the present invention includes a substrate 10 , a plurality of light shielding portions 30 , and a plurality of semi-transmissive portions 50 .
  • the plurality of light shielding portions 30 are respectively disposed on the surface of the substrate 10 , and the plurality of semi-transparent portions are respectively transparent.
  • the portions 50 are respectively disposed adjacent to the two side edges of the plurality of light shielding portions 30, and a light transmitting region 70 is formed between the adjacent two light shielding portions 30 between the adjacent two semi-light transmitting portions 50.
  • the material of the substrate 10 may be, but not limited to, quartz, and the material of the light shielding portion 30 may be, but not limited to, chromium.
  • the material of the semi-transmissive portion 50 is a material used for a gray tone mask or a halftone mask, so that when the mask 100 is irradiated, part of the light can pass through the semi-transmissive portion 50, and other portions of the light are Reflected.
  • the mask 100 provided by the present invention is provided with a half transparent portion 50 between the light shielding portion 30 and the light transmitting region 70, and when exposed using the mask 100 of the present invention, Since the exposure amount of the black photoresist material layer corresponding to the semi-transmissive portion 50 is smaller than the exposure amount of the black photoresist material layer corresponding to the transparent region 70, the black photoresist material layer corresponding to the semi-transmissive portion 50 is developed.
  • the solubility at the time is between the regions corresponding to the light-transmitting region 70 and the light-shielding portion 30, thereby functioning as a buffer, and it is easy to improve the development accuracy by controlling the development time.
  • the black photoresist material layer corresponding to the semi-transmissive portion 50 can function as a buffer, it is convenient to set the width of the light-transmitting region 70 to be smaller than the width of the light-transmitting region of the mask in the prior art, and further The width of the fabricated black matrix is made smaller, thereby increasing the number of sub-pixels in the area unit of the color filter, thereby improving the definition of the display panel.
  • the present invention further provides a method for fabricating a color filter substrate 200, including the steps of forming a black matrix 21 on a substrate substrate 20, including:
  • Step S11 referring to FIG. 3, a black photoresist material is coated on the base substrate 20 to form a black photoresist material layer 22.
  • the black photoresist material layer 22 corresponding to the semi-transmissive portion and the black photoresist material layer 22 corresponding to the light-transmitting region have different solubility during development, and black lithography corresponding to the transparent region
  • the layer of glue material 22 is more difficult to dissolve under the same conditions.
  • Step S12 referring to FIG. 4, the black photoresist material layer 22 is exposed using a mask 100.
  • the mask 100 includes a substrate 10, a plurality of light shielding portions 30, and a plurality of semi-transmissive portions 50.
  • the plurality of light shielding portions 30 are respectively disposed on the surface of the substrate 10, and the plurality of semi-transmissive portions 50 are respectively abutted against the plurality of semi-transmissive portions 50.
  • the light-shielding portion 30 is provided on both sides of the light-shielding portion 30, and a light-transmitting region 70 is formed between the adjacent two light-shielding portions 30.
  • the width of the light transmitting region 70 is greater than the width of the semi-light transmitting portion 50.
  • the material of the substrate 10 is quartz, and the material of the light shielding portion 30 is chromium.
  • the material of the semi-transmissive portion 50 is a material used for the gray tone mask 100 or the halftone mask 100.
  • the effect of the exposure is to project an image composed of the light shielding portion 30, the semi-transmissive portion 50, and the light-transmitting region 70 on the mask 100 onto the black photoresist material layer 22 by ultraviolet irradiation.
  • the black photoresist material layer 22 is divided into a first exposure region 221, a second exposure region 222, and a third exposure region 223, wherein the first exposure region 221 is a corresponding mask.
  • the area of the light shielding portion 30 of the plate 100 is not irradiated with ultraviolet rays
  • the second exposure region 222 is a region corresponding to the semi-light transmitting portion 50 of the mask 100, that is, partially irradiated with ultraviolet rays
  • the third exposure region 223 corresponds.
  • the position of the light-transmitting region 70 of the mask 100 is irradiated with sufficient ultraviolet rays.
  • the exposure amounts of the third exposure area 223, the second exposure area 222, and the first exposure area 221 are sequentially decreased.
  • step S13 referring to FIG. 6, development is performed to form the black matrix 21 on the base substrate 20.
  • the solubility of the first exposure region 221, the second exposure region 222, and the third exposure region 223 under the same conditions is sequentially decreased, so that the second exposure region 222 can function as a buffer and is easy to be used.
  • the development time is controlled to thereby improve the accuracy of the third exposure region 223, that is, the black matrix 21.
  • developing to form the black matrix 21 on the base substrate 20 includes:
  • the exposed base substrate 20 is applied to the developing solution to remove the first exposure region 221 and the second exposure region 222, leaving the third exposure region 223, that is, the black matrix 21 is formed.
  • the width of the black matrix 21 is the width of the light-transmitting region 70 on the mask 100.
  • a flow of forming a color resin pattern of at least two colors on the base substrate 20 is further included.
  • the mask 100 applied in the method for preparing a color filter provided by the present invention is provided with a semi-transmissive portion 50 between the light shielding portion 30 and the light transmitting region 70, so that when exposed,
  • the solubility of the second exposure region 222 during development is between the first exposure region 221 and the third exposure region 223, so that the second exposure region 222 can serve as a buffer for the worker to control the development time and improve the development time.
  • the second exposure region 222 can function as a buffer during development, it is convenient to set the width of the light-transmitting region 70 to be smaller than the width of the light-transmitting region 70 of the mask 100 in the prior art, thereby making the finished
  • the width of the black matrix 21 is smaller, thereby increasing the number of sub-pixels in the area unit of the color filter, thereby improving the definition of the display panel.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Filters (AREA)
  • Liquid Crystal (AREA)

Abstract

一种掩膜版（100）和一种彩色滤光片基板的制备方法，掩膜板（100）包括：基板（10）；多个遮光部（30），分别间隔设置在基板（10）的表面；多个半透光部（50），分别紧靠多个遮光部（30）的两侧边而设置，其中，在相邻的两个遮光部（30）之间，相邻的两个半透光部（50）之间形成透光区域（70）。

Description

一种掩膜版及彩色滤光片基板的制备方法
【技术领域】
本发明涉及显示技术领域，特别是涉及一种掩膜版及彩色滤光片基板的制备方法。
【背景技术】
随着显示屏技术的发展，窄边框及清晰度高的显示屏越来越受到消费者们的青睐。为满足消费者们的需求，在对影响到显示屏清晰度及尺寸的黑矩阵的精度也要求越高。目前在制作黑矩阵的过程中，通常采用扫描式曝光及接近式曝光。其中扫描式曝光精度较高，但因费用较为昂贵而使得制造成本较高，因此大多数企业会采用接近式曝光方式，但接近式曝光方式所用的掩膜版为“透光区-遮光区”结构，使得曝光充足的与未曝光的光刻胶直接接触，在后续显影过程中因难以控制时间而影响到光刻胶的尺寸精度，进而使得所制成的黑矩阵图案的尺寸精度较低。
【发明内容】
为了本发明主要解决的技术问题是提供一种在制作黑矩阵时能提高黑矩阵精度以及显示面板的清晰度的掩膜版。
另外，还有必要提供一种彩色滤光片基板的制备方法。
为解决上述技术问题，本发明提供的一种技术方案是：一种掩膜版，包括：
基板；
多个遮光部，分别间隔设置在所述基板的表面；
多个半透光部，分别紧靠多个所述遮光部的两侧边而设置，其中，在相邻的两个所述遮光部之间，相邻的两个所述半透光部之间形成透光区域；
其中，所述基板的材料为石英，所述遮光部的材料是铬，所述半透光部的材料为灰色调掩膜版或半色调掩膜版所使用的材料。
为解决上述技术问题，本发明提供的另一种技术方案是：提供一种掩膜版，包括：
基板；
多个遮光部，分别间隔设置在所述基板的表面；
多个半透光部，分别紧靠多个所述遮光部的两侧边而设置，其中，在相邻的两个所述遮光部之间，相邻的两个所述半透光部之间形成透光区域。
其中，所述透光区域的宽度大于所述半透光部的宽度。
其中，所述基板的材料为石英，所述遮光部的材料是铬。
其中，所述半透光部的材料为灰色调掩膜版或半色调掩膜版所使用的材料。
为解决上述技术问题，本发明提供的又一种技术方案是：提供一种彩色滤光片基板的制备方法，包括在衬底基板上形成黑矩阵，所述在衬底基板上形成黑矩阵的步骤，包括：
在所述衬底基板上涂覆一层黑色光刻胶材料，形成黑色光刻胶材料层；
采用掩膜版对所述黑色光刻胶材料层进行曝光；
进行显影，以在所述衬底基板上形成黑矩阵；
其中，所述掩膜版包括：
基板；
多个遮光部，分别间隔设置在所述基板的表面；
多个半透光部，分别紧靠多个所述遮光部的两侧边而设置，其中，在相邻的两个所述遮光部之间，相邻的两个所述半透光部之间形成透光区域。
其中，所述黑色光刻胶材料层经过曝光后，分为第一曝光区、第二曝光区及第三曝光区，所述第一曝光区对应所述掩膜版的遮光部，所述第二曝光区对应所述掩膜版的半透光部，所述第三曝光区对应所述掩膜版的透光区域，其中所述第三曝光区、第二曝光区及第一曝光区的曝光量依次减小。
其中，在显影时，所述第一曝光区、第二曝光区及第三曝光区在同等条件下的溶解度依次减小。
其中，所述进行显影，以在所述衬底基板上形成黑矩阵具体包括：
将曝光后的衬底基板至于显影液中，以将所述第一曝光区及第二曝光区去除，留下所述第三曝光区，即形成所述黑矩阵。
其中，所述黑矩阵的宽度等于所述掩膜版上所述透光区域的宽度。
其中，所述半透光部的材料为灰色调掩膜版或半色调掩膜版所使用的材料。
本发明的有益效果是：区别于现有技术的情况，本发明所提供的掩膜版在遮光部与透光区域之间设置两个半透光透光部，使用该掩膜版进行曝光时，因对应半透光部的黑色光刻胶材料层的曝光量小于对应透光区域的黑色光刻胶材料层的曝光量，使得对应半透光部的黑色光刻胶材料层在显影时的溶解度介于对应透光区域及遮光部的溶解度之间，从而起到一个缓冲的作用，易于通过控制显影时间提高显影精度。另外，由于对应半透光部的黑色光刻胶材料层可以起到缓冲的作用，便于将透光区域的宽度设置为比现有技术中掩膜版的透光区域的宽度小，进而使制成的黑矩阵的宽度更小，从而提高彩色滤光片中面积单位内子像素的数量，进而提高显示面板的清晰度。
【附图说明】
图1是本发明掩膜版的剖面结构示意图；
图2是本发明彩色滤光片基板的制备方法的流程示意图；
图3是本发明彩色滤光片基板的制备方法中形成黑色光刻胶材料层的示意图；
图4是本发明彩色滤光片基板的制备方法中对黑色光刻胶材料层进行曝光的示意图；
图5是本发明彩色滤光片基板的制备方法中对黑色光刻胶材料层进行曝光后的示意图；
图6是本发明彩色滤光片基板的制备方法中进行显影后的示意图。
【具体实施方式】
下面结合附图和实施例对本发明进行详细说明。
请参阅图1，本发明提供的掩膜版100包括基板10、多个遮光部30、多个半透光部50，多个遮光部30分别间隔设置在基板10的表面，多个半透光部50分别紧靠多个遮光部30的两侧边而设置，在相邻的两个遮光部30之间，相邻的两个半透光部50之间形成透光区域70。
基板10的材料可为但不限于石英，遮光部30的材料可为但不限于铬。
半透光部50的材料为灰色调掩膜版或半色调掩膜版所使用的材料，以使掩膜版100在进行照射时，部分光线能穿过半透光部50，而其它部分光线则被反射。
相较于传统的掩膜版100，本发明所提供的掩膜版100在遮光部30与透光区域70之间设置一半透光部50，在使用本发明的掩膜版100进行曝光时，因对应半透光部50的黑色光刻胶材料层的曝光量小于对应透光区域70的黑色光刻胶材料层的曝光量，使得对应半透光部50的黑色光刻胶材料层在显影时的溶解度介于对应透光区域70及遮光部30的区域之间，从而起到一个缓冲的作用，易于通过控制显影时间从而提高显影精度。另外，由于对应半透光部50的黑色光刻胶材料层可以起到缓冲的作用，便于将透光区域70的宽度设置为比现有技术中掩膜版的透光区域的宽度小，进而使制成的黑矩阵的宽度更小，从而提高彩色滤光片中面积单位内子像素的数量，进而提高显示面板的清晰度。
请参阅图2及图3-图6，本发明还提供一种彩色滤光片基板200的制备方法，包括在衬底基板20上形成黑矩阵21的步骤，包括：
步骤S11，请参阅图3，在所述衬底基板20上涂覆一层黑色光刻胶材料，形成黑色光刻胶材料层22。
可以理解，在同样曝光能量下，对应半透光部的黑色光刻胶材料层22和对应透光区域的黑色光刻胶材料层22在显影时溶解度不一样，对应透光区域的黑色光刻胶材料层22在同等条件下更难溶解。
步骤S12，请参阅图4，采用掩膜版100对黑色光刻胶材料层22进行曝光。
其中，掩膜版100包括基板10、多个遮光部30、多个半透光部50，多个遮光部30分别间隔设置在基板10的表面，多个半透光部50分别紧靠多个遮光部30的两侧边而设置，在相邻的两个遮光部30之间，相邻的两个半透光部50之间形成透光区域70。
透光区域70的宽度大于半透光部50的宽度。
基板10的材料为石英，遮光部30的材料是铬。
半透光部50的材料为灰色调掩膜版100或半色调掩膜版100所使用的材料。
可以理解，曝光的作用是通过紫外线的照射，将掩膜版100上遮光部30、半透光部50及透光区域70组成的图像投影至黑色光刻胶材料层22上。
可以理解，请结合参阅图5，经过曝光后，黑色光刻胶材料层22分为第一曝光区221、第二曝光区222及第三曝光区223，其中第一曝光区221为对应掩膜版100的遮光部30的区域，即不受紫外线的照射，第二曝光区222为对应掩膜版100的半透光部50的区域，即受到部分紫外线的照射，第三曝光区223为对应掩膜版100的透光区域70的位置，即受到充分的紫外线的照射。其中第三曝光区223、第二曝光区222及第一曝光区221的曝光量依次减小。
步骤S13，请结合参阅图6，进行显影，以在衬底基板20上形成黑矩阵21。
可以理解，在显影时，第一曝光区221、第二曝光区222及第三曝光区223在同等条件下的溶解度依次减小，如此，第二曝光区222就可以起到缓冲的作用，易于控制显影时间，从而提高第三曝光区223，即黑矩阵21的精度。
其中，进行显影，以在衬底基板20上形成黑矩阵21具体步骤包括：
将曝光后的衬底基板20至于显影液中，以将第一曝光区221及第二曝光区222去除，留下第三曝光区223，即形成黑矩阵21。
可以理解，通过控制显影时间，使得黑矩阵21的宽度为掩膜版100上透光区域70的宽度。
可以理解，在其他实施方式中，进一步包括在衬底基板20上形成至少两种颜色的彩色树脂图案的流程。
区别于现有技术的情况，本发明提供的彩色滤光片的制备方法中所应用的掩膜版100在遮光部30及透光区域70之间设置半透光部50，使得在曝光时，第二曝光区222在显影时的溶解度介于第一曝光区221及第三曝光区223之间，如此第二曝光区222可以起到缓冲的作用，便于工作人员控制显影时间，提高显影后第三曝光区223的精度，即制备的黑矩阵21的精度。另外，由于第二曝光区222在显影时可以起到缓冲作用，便于将透光区域70的宽度设置为比现有技术中掩膜版100的透光区域70的宽度小，进而使制成的黑矩阵21的宽度更小，从而提高彩色滤光片中面积单位内子像素的数量，进而提高显示面板的清晰度。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (11)

  1. 一种掩膜版，其中，包括：
    基板；
    多个遮光部，分别间隔设置在所述基板的表面；
    多个半透光部，分别紧靠多个所述遮光部的两侧边而设置，其中，在相邻的两个所述遮光部之间，相邻的两个所述半透光部之间形成透光区域；
    其中，所述基板的材料为石英，所述遮光部的材料是铬，所述半透光部的材料为灰色调掩膜版或半色调掩膜版所使用的材料。
  2. 一种掩膜版，其中，包括：
    基板；
    多个遮光部，分别间隔设置在所述基板的表面；
    多个半透光部，分别紧靠多个所述遮光部的两侧边而设置，其中，在相邻的两个所述遮光部之间，相邻的两个所述半透光部之间形成透光区域。
  3. 根据权利要求2所述的掩膜版，其中，
    所述透光区域的宽度大于所述半透光部的宽度。
  4. 根据权利要求2所述的掩膜版，其中，
    所述基板的材料为石英，所述遮光部的材料是铬。
  5. 根据权利要求2所述的掩膜版，其中，
    所述半透光部的材料为灰色调掩膜版或半色调掩膜版所使用的材料。
  6. 一种彩色滤光片基板的制备方法，包括在衬底基板上形成黑矩阵，其中，所述在衬底基板上形成黑矩阵的步骤，包括：
    在所述衬底基板上涂覆一层黑色光刻胶材料，形成黑色光刻胶材料层；
    采用掩膜版对所述黑色光刻胶材料层进行曝光；
    进行显影，以在所述衬底基板上形成黑矩阵；
    其中，所述掩膜版包括：
    基板；
    多个遮光部，分别间隔设置在所述基板的表面；
    多个半透光部，分别紧靠多个所述遮光部的两侧边而设置，其中，在相邻的两个所述遮光部之间，相邻的两个所述半透光部之间形成透光区域。
  7. 根据权利要求6所述的方法，其中，
    所述黑色光刻胶材料层经过曝光后，分为第一曝光区、第二曝光区及第三曝光区，所述第一曝光区对应所述掩膜版的遮光部，所述第二曝光区对应所述掩膜版的半透光部，所述第三曝光区对应所述掩膜版的透光区域，其中所述第三曝光区、第二曝光区及第一曝光区的曝光量依次减小。
  8. 根据权利要求7所述的方法，其中，
    在显影时，所述第一曝光区、第二曝光区及第三曝光区在同等条件下的溶解度依次减小。
  9. 根据权利要求8所述的方法，其中，
    所述进行显影，以在所述衬底基板上形成黑矩阵具体包括：
    将曝光后的衬底基板至于显影液中，以将所述第一曝光区及第二曝光区去除，留下所述第三曝光区，即形成所述黑矩阵。
  10. 根据权利要求6所述的方法，其中，
    所述黑矩阵的宽度等于所述掩膜版上所述透光区域的宽度。
  11. 根据权利要求6所述的方法，其中，
    所述半透光部的材料为灰色调掩膜版或半色调掩膜版所使用的材料。
PCT/CN2016/083093 2016-04-26 2016-05-24 一种掩膜版及彩色滤光片基板的制备方法 WO2017185438A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/109,029 US10345693B2 (en) 2016-04-26 2016-05-24 Manufacturing method of a mask plate and a color filter substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610265438.1A CN105717737B (zh) 2016-04-26 2016-04-26 一种掩膜版及彩色滤光片基板的制备方法
CN201610265438.1 2016-04-26

Publications (1)

Publication Number Publication Date
WO2017185438A1 true WO2017185438A1 (zh) 2017-11-02

Family

ID=56161666

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/083093 WO2017185438A1 (zh) 2016-04-26 2016-05-24 一种掩膜版及彩色滤光片基板的制备方法

Country Status (3)

Country Link
US (1) US10345693B2 (zh)
CN (1) CN105717737B (zh)
WO (1) WO2017185438A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105892142A (zh) * 2016-06-29 2016-08-24 武汉华星光电技术有限公司 黑色矩阵光罩、制备黑色矩阵的方法及其应用
TWI613506B (zh) * 2017-01-04 2018-02-01 光罩的製作方式
CN107369777B (zh) * 2017-08-31 2020-01-03 京东方科技集团股份有限公司 一种oled基板及其制备方法、显示装置
CN107632453B (zh) * 2017-10-31 2021-03-02 京东方科技集团股份有限公司 显示面板及制造方法和显示装置
CN108563098A (zh) * 2018-01-17 2018-09-21 京东方科技集团股份有限公司 一种掩膜版及其制备方法
CN109212907A (zh) * 2018-11-05 2019-01-15 江苏博砚电子科技有限公司 一种制造黑色矩阵涂膜的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09325469A (ja) * 1996-06-03 1997-12-16 Ricoh Co Ltd ハーフトーン位相シフトマスクとその製造方法
JP2001174976A (ja) * 2000-11-02 2001-06-29 Hoya Corp ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク
US20020119379A1 (en) * 2000-12-22 2002-08-29 Kenji Noguchi Photomask
CN102854656A (zh) * 2012-09-29 2013-01-02 深圳市华星光电技术有限公司 彩色滤光基板以及其相关制作方法
JP2013134435A (ja) * 2011-12-27 2013-07-08 Hoya Corp フォトマスクの製造方法、フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法
CN103383522A (zh) * 2012-05-02 2013-11-06 Hoya株式会社 光掩模、图案转印方法以及平板显示器的制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI286663B (en) * 2003-06-30 2007-09-11 Hoya Corp Method for manufacturing gray tone mask, and gray tone mask
JP2005108912A (ja) * 2003-09-29 2005-04-21 Quanta Display Japan Inc 液晶表示装置とその製造方法
JP5058847B2 (ja) * 2007-03-07 2012-10-24 富士フイルム株式会社 光学フィルタ、及びそれを用いた液晶表示装置
WO2012060243A1 (ja) * 2010-11-02 2012-05-10 シャープ株式会社 カラーフィルタ基板、及び、その製造方法
JP5884521B2 (ja) * 2011-02-09 2016-03-15 信越化学工業株式会社 パターン形成方法
KR102001856B1 (ko) * 2012-08-13 2019-07-22 삼성디스플레이 주식회사 마스크 및 이를 이용한 표시 기판의 제조 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09325469A (ja) * 1996-06-03 1997-12-16 Ricoh Co Ltd ハーフトーン位相シフトマスクとその製造方法
JP2001174976A (ja) * 2000-11-02 2001-06-29 Hoya Corp ハーフトーン型位相シフトマスク及びハーフトーン型位相シフトマスクブランク
US20020119379A1 (en) * 2000-12-22 2002-08-29 Kenji Noguchi Photomask
JP2013134435A (ja) * 2011-12-27 2013-07-08 Hoya Corp フォトマスクの製造方法、フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法
CN103383522A (zh) * 2012-05-02 2013-11-06 Hoya株式会社 光掩模、图案转印方法以及平板显示器的制造方法
CN102854656A (zh) * 2012-09-29 2013-01-02 深圳市华星光电技术有限公司 彩色滤光基板以及其相关制作方法

Also Published As

Publication number Publication date
US20180101092A1 (en) 2018-04-12
US10345693B2 (en) 2019-07-09
CN105717737A (zh) 2016-06-29
CN105717737B (zh) 2019-08-02

Similar Documents

Publication Publication Date Title
WO2017185438A1 (zh) 一种掩膜版及彩色滤光片基板的制备方法
WO2013155747A1 (zh) 彩色滤光片、彩色滤光片的制作方法及液晶面板
WO2014107890A1 (zh) 彩色滤光片基板及其制造方法和液晶面板
WO2020224317A1 (zh) 彩膜基板、液晶显示装置、彩膜基板的制备方法以及液晶显示装置的制备方法
WO2017181460A1 (zh) 一种液晶显示面板、显示装置
WO2019019316A1 (zh) 一种显示面板、阵列基板及其制造方法
WO2017181463A1 (zh) 阵列基板及其制造方法、液晶显示器
WO2017031771A1 (zh) 一种彩色滤光片及其制作方法
WO2019169703A1 (zh) 掩膜板、阵列基板及阵列基板的制备方法
WO2017210924A1 (zh) 对透明基板进行曝光的方法
WO2020118937A1 (zh) 一种黑色矩阵的制备方法及显示装置
JP5622052B2 (ja) カラーフィルタ、液晶表示装置、カラーフィルタの製造方法
WO2018161432A1 (zh) 显示面板的制造方法、线栅偏光片及其制造方法
WO2019061556A1 (zh) 一种显示器的基板的制造方法及光罩
WO2019214168A1 (zh) 彩膜基板及其制备方法、显示装置
CN108594512B (zh) 彩膜基板的制作方法
WO2018233182A1 (zh) 光罩结构及阵列基板制造方法
WO2016041217A1 (zh) 液晶显示面板及其制造方法
TW201530197A (zh) 彩色濾光基板的製造方法
WO2021164120A1 (zh) 像素 bank 制备方法、像素 bank 结构、像素结构和显示面板
CN110703489A (zh) 掩膜版和显示面板及其制备方法
WO2018209760A1 (zh) 彩色滤光片基板及其制备方法
WO2016033829A1 (zh) 显示面板、彩色滤光基板的制造方法及制造设备
WO2015168900A1 (zh) 彩色滤光片及其制造方法
CN111965887A (zh) 一种掩膜版的制作方法及彩膜基板的制作工艺

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 15109029

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16899948

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 16899948

Country of ref document: EP

Kind code of ref document: A1