WO2019061556A1 - 一种显示器的基板的制造方法及光罩 - Google Patents

一种显示器的基板的制造方法及光罩 Download PDF

Info

Publication number
WO2019061556A1
WO2019061556A1 PCT/CN2017/105851 CN2017105851W WO2019061556A1 WO 2019061556 A1 WO2019061556 A1 WO 2019061556A1 CN 2017105851 W CN2017105851 W CN 2017105851W WO 2019061556 A1 WO2019061556 A1 WO 2019061556A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
area
region
substrate
transmitting
Prior art date
Application number
PCT/CN2017/105851
Other languages
English (en)
French (fr)
Inventor
杨昆
王幸
Original Assignee
武汉华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US15/745,120 priority Critical patent/US10725371B2/en
Publication of WO2019061556A1 publication Critical patent/WO2019061556A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • the present invention relates to the field of display, and in particular to a method of manufacturing a substrate for a display and a photomask of the corresponding substrate.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • CF color film
  • the illumination intensity in the overlap region is smaller than the illumination intensity in the central region of the lens
  • the thickness of the exposure pattern obtained in the overlap region due to insufficient exposure is generally smaller than the thickness of the target exposure pattern
  • Positive photoresist the exposure will be excessive, the thickness of the exposure pattern obtained will generally be greater than the target exposure
  • the thickness of the light pattern thus, the phenomenon of lens tens mura is generated macroscopically, and this phenomenon tends to cause a decrease in yield during the generation of a small-sized panel having a higher resolution.
  • the technical problem to be solved by the present invention is to provide a method for manufacturing a substrate of a display and a mask for the corresponding substrate, which can compensate for the exposure pattern obtained by the exposure machine having different lenses in the light overlapping region of the reticle, thereby obtaining more Accurate exposure patterns improve product yield.
  • an aspect of the present invention provides a method of manufacturing a substrate of a display, the method comprising:
  • the reticle comprises a direct light-emitting region and a light overlapping region, and includes a light-transmitting region and a non-transparent light in the light overlapping region
  • the light-emitting area and the non-light-transmissive area are included in the direct light-emitting area of the reticle; wherein each of the light-transmitting areas of the light overlapping area is larger or smaller than each of the direct light-emitting areas The area of the light zone;
  • the exposed photoresist layer is developed to obtain a photoresist pattern.
  • the substrate is an array substrate or a color film substrate.
  • an area of each light-transmitting region of the light overlapping region is larger than an area of each light-transmitting region of the direct light-emitting region.
  • the area of each light-transmitting region of the light overlapping region is smaller than the area of each light-transmitting region of the direct light-emitting region.
  • the present invention also provides a photomask for exposing a substrate coated with a photoresist layer using a plurality of lenses of an exposure machine, the photomask including a direct light-emitting region and a light overlapping region in the light
  • the overlapping area includes a light transmitting area and a non-light transmitting area, and includes a light transmitting area and a non-light transmitting area in the direct light emitting area of the reticle; each of the light transmitting areas of the light overlapping area is larger or smaller than The area of each light transmissive area of the direct light directing zone.
  • the substrate is an array substrate or a color film substrate.
  • the photoresist layer coated on the substrate body adopts a negative photoresist
  • the light overlaps
  • the area of each of the light-transmissive regions of the region is larger than the area of each of the light-transmitting regions of the direct light-emitting region.
  • the area of each light-transmitting region of the light overlapping region is smaller than the area of each light-transmitting region of the direct light-emitting region.
  • the present invention also provides a photomask for exposing a substrate coated with a photoresist layer using a plurality of lenses of an exposure machine, the photomask including a direct light-emitting region and a light overlapping region in the light
  • the overlapping area includes a light transmitting area and a non-light transmitting area, and includes a light transmitting area and a non-light transmitting area in the direct light emitting area of the reticle; wherein an area of each light transmitting area of the light overlapping area is larger than Or smaller than the area of each light transmissive area of the direct light directing zone;
  • the substrate is an array substrate or a color film substrate.
  • an area of each light-transmitting region of the light overlapping region is larger than an area of each light-transmitting region of the direct light-emitting region.
  • the area of each light-transmitting region of the light overlapping region is smaller than the area of each light-transmitting region of the direct light-emitting region.
  • the method for manufacturing the substrate of the display provided by the present invention and the reticle of the corresponding substrate by performing complementary value processing on the light-transmitting region in the light overlapping region of the reticle, that is, expanding or reducing the area of the light-transmitting region;
  • the size of the exposure pattern obtained in the overlap region on the substrate is closer to the size of the target exposure pattern, so that a more accurate exposure pattern can be obtained, thereby reducing or eliminating the influence of lens unevenness and improving the substrate product yield.
  • FIG. 1 is a schematic main flow diagram of an embodiment of a method for manufacturing a substrate of a display provided by the present invention
  • Figure 2 is a schematic structural view of an embodiment of the reticle of Figure 1;
  • FIG. 3 is a schematic structural view of another embodiment of the reticle of FIG. 1.
  • FIG. 1 a schematic diagram of a main flow of an embodiment of a method for manufacturing a substrate of a display provided by the present invention is shown.
  • the method includes the following steps:
  • a substrate body is provided; for example, in one example, the substrate body provided is a transparent glass substrate, and the glass substrate needs to be initially cleaned.
  • the initial cleaning generally involves placing the glass substrate into the cleaning tank, and removing the dust or impurities on the surface of the glass substrate by chemical or physical means to prevent the impurities from affecting the subsequent manufacturing;
  • Step S11 applying a photoresist layer on the substrate body, and the photoresist layer may adopt a positive photoresist or a negative photoresist;
  • Step S12 exposing the photoresist layer through a reticle by using a plurality of lenses of the exposure machine, wherein the reticle comprises a direct light ray area and a light ray overlapping area, and the light ray overlap area includes a light transmitting area and a non-
  • the light-transmitting region includes a light-transmitting region and a non-light-transmitting region in a direct light-emitting region of the reticle; wherein, when the photoresist layer coated on the substrate body adopts a negative photoresist, the light ray overlap region
  • the area of each of the light-transmitting regions is larger than the area of each of the light-transmitting regions of the direct light-emitting region; in this case, by increasing the area of the light-transmitting region, the total intensity of the transmitted light can be increased, thereby Obtaining a sufficient thickness of the exposed region; and in another case, that is, when the photoresist layer coated on the substrate body adopts a
  • step S13 the exposed photoresist layer is developed to obtain a photoresist pattern.
  • the substrate is an array substrate or a color film substrate, and the method can be applied to fabrication. In the process of array substrate or color film substrate.
  • FIG. 2 a schematic structural view of one embodiment of the reticle utilized in FIG. 1 is shown.
  • the photoresist layer coated on the substrate body is made of negative photoresist
  • the photomask shown in FIG. 2 can be used.
  • the photomask of the substrate is used for using multiple lenses of the exposure machine.
  • a substrate coated with a photoresist layer comprising light direct areas 10, 12 and a light overlap region 11, wherein the light of one lens covers area a and area b, and the light coverage area of the other lens c and the area b, that is, the area a is the direct light-emitting area 10 of the first lens, the area c is the direct light-emitting area 12 of the second lens; the area b is the light which can be irradiated by the first lens and the second lens light Overlapping area 11;
  • a light transmitting region 111 and a non-light transmitting region 110 are included in the light overlapping region 11 , and the light transmitting region 101 and the non-light transmitting region 100 are included in the light direct emitting region 10 of the reticle.
  • the area of each of the light-transmitting regions 111 of the light overlapping region is larger than the area of each of the light-transmitting regions 101 of the direct light-emitting region, and the area of the broken-line region 112 in the light-transmitting region 101 and the light-transmitting region
  • an area of each of the light-transmitting regions 111 of the light overlapping region may completely cover an area of each of the light-transmitting regions 101 of the light direct-emitting region, and each of the light-transmitting regions 111 of the light overlapping region includes the The area of a light transmissive region of the direct light directing region (i.e., the area enclosed by the dashed line at 112) and a complementary area (the area outside the dashed line 112 in the light transmissive region 111), it will be understood that in various embodiments Different complementary area can be selected.
  • the complementary area can be selected to be less than 1/10 of the area of the light-transmitting area of the direct light-emitting area, and the dotted area is only convenient for understanding, in the actual mask. This dashed area 112 is not indicated.
  • FIG. 3 a schematic structural view of another embodiment of the reticle utilized in FIG. 1 is shown.
  • the photomask shown in FIG. 3 can be used.
  • the photomask is different from that in FIG. 2 in that the light overlaps.
  • the area of the light-transmissive region 111 may be 1/10 smaller than the area of the dotted region 112, and the dotted region thereof Just for understanding
  • the dashed area 112 is not indicated in the actual reticle.
  • the photomask shown in FIG. 3 can be used. After step S13 in FIG. 1, it can be understood that the overlap is reduced. The area of each of the light-transmissive regions of the region reduces the total intensity of illumination through each of the light-transmissive regions, thereby obtaining a suitable thickness of the exposed regions.
  • the method for manufacturing the substrate of the display provided by the embodiment of the present invention and the reticle of the corresponding substrate are obtained by expanding or reducing the area of the light-transmitting area in the overlapping area of the light of the reticle, thereby obtaining the overlapping area on the substrate after patterning.
  • the size of the exposure pattern is closer to the size of the target exposure pattern, so that a more accurate exposure pattern can be obtained, thereby reducing or eliminating the influence of uneven lens light and improving the yield of the substrate product.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

一种显示器的基板的制造方法，包括：提供一基板本体（S10）；在基板本体上涂覆光阻层（S11）；利用曝光机多个镜头透过光罩（1）对光阻层进行曝光，其中，光罩（1）包括光线直射区（10，12）以及光线重叠区（11），在光线重叠区（11）中包括透光区（111）以及非透光区（110），在光罩（1）的光线直射区（10，12）中包括透光区（101）以及非透光区（100）；其中，光线重叠区（11）的每一透光区（111）的面积均大于或小于光线直射区（10，12）的每一透光区（101）的面积（S12）；对曝光后的光阻层进行显影，以获得光阻图案（S13）。对光线重叠区（11）的曝光图案进行补值，从而获得更加准确的曝光图案，能够提高产品良率。

Description

一种显示器的基板的制造方法及光罩
本申请要求于2017年9月26日提交中国专利局、申请号为201710884143.7、发明名称为“一种显示器的基板的制造方法及光罩”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及显示领域，特别涉及一种显示器的基板的制造方法及相应基板的光罩。
背景技术
在薄膜晶体管-液晶显示器(ThinFilm Transistor-Liquid Crystal Display，TFT-LCD)生成过程中，特别是在阵列(Array)基板或彩膜(CF)基板的制程中，需要多次使用光刻工艺。在光刻工艺中，利用具有设计图案的光罩(Mask)和曝光机的紫外光对涂有光阻的基板进行曝光，可以将光罩上的图案投影到基板的光阻上，然后通过显影在玻璃基板上复制光罩的图案。在TFT-LCD的生成过程中，需要反复几次进行光刻才能完成薄膜晶体管阵列基板和彩膜基板的制作。
而在实际生产过程中，很多曝光机具有多组镜头(lens)，例如现有的一种Nikon曝光机中具有6组镜头组成的光路系统，在实际照射中会存在多组镜头的紫外光照射到光罩中同一区域的情形，即不同镜头的光线照射在光罩的一个光线重叠区(overlap)上，由于不同镜头光线之间的重叠很难调整到最佳的对准位置，且在光线重叠区域的光照强度同镜头中心区域的光照强度存在差异性，极易造成透过该光线重叠区获得的光阻图案与实际需要的曝光图案(目标曝光图案)在关键尺寸上存在差异，一般来说，在重叠区的光照强度小于其镜头中心区的光照强度，则对于采用负性光阻，在重叠区由于曝光不足则其获得的曝光图案的厚度一般会小于目标曝光图案的厚度；对于采用正性光阻，则会曝光过量，其获得的曝光图案的厚度一般会大于于目标曝 光图案的厚度；从而在宏观上会产生镜头光线不均(lens mura)的现象，而该现象易造成在具有较高解析度的小尺寸面板产生过程中良率的下降。
发明内容
本发明所要解决的技术问题在于，提供一种显示器的基板的制造方法及相应基板的光罩，可以对具有不同镜头的曝光机在光罩的光线重叠区获得曝光图案进行补值，从而获得更加准确的曝光图案，能提高产品良率。
为了解决上述技术问题，本发明的一方面提供一种显示器的基板的制造方法，所述方法包括：
提供一基板本体；
在所述基板本体上涂覆光阻层；
利用曝光机的多个镜头透过光罩对所述光阻层进行曝光，其中，所述光罩包括光线直射区以及光线重叠区，在所述光线重叠区中包括透光区以及非透光区，在所述光罩的光线直射区中包括透光区以及非透光区；其中，所述光线重叠区的每一透光区的面积均大于或小于所述光线直射区的每一透光区的面积；
对曝光后的所述光阻层进行显影，以获得光阻图案。
其中，所述基板为阵列基板或彩膜基板。
其中，当所述基板本体上涂覆的光阻层采用负性光阻时，所述光线重叠区的每一透光区的面积大于所述光线直射区的每一透光区的面积。
其中，当所述基板本体上涂覆的光阻层采用正性光阻时，所述光线重叠区的每一透光区的面积小于所述光线直射区的每一透光区的面积。
相应地，本发明还提供一种光罩，用于利用曝光机的多个镜头对涂覆有光阻层的基板进行曝光，所述光罩包括光线直射区以及光线重叠区，在所述光线重叠区中包括透光区以及非透光区，在所述光罩的光线直射区中包括透光区以及非透光区；所述光线重叠区的每一透光区的面积均大于或小于所述光线直射区的每一透光区的面积。
其中，所述基板为阵列基板或彩膜基板。
其中，当所述基板本体上涂覆的光阻层采用负性光阻时，所述光线重叠 区的每一透光区的面积大于所述光线直射区的每一透光区的面积。
其中，当所述基板本体上涂覆的光阻层采用正性光阻时，所述光线重叠区的每一透光区的面积小于所述光线直射区的每一透光区的面积。
相应地，本发明还提供一种光罩，用于利用曝光机的多个镜头对涂覆有光阻层的基板进行曝光，所述光罩包括光线直射区以及光线重叠区，在所述光线重叠区中包括透光区以及非透光区，在所述光罩的光线直射区中包括透光区以及非透光区；其中，所述光线重叠区的每一透光区的面积均大于或小于所述光线直射区的每一透光区的面积；
其中，所述基板为阵列基板或彩膜基板。
其中，当所述基板本体上涂覆的光阻层采用负性光阻时，所述光线重叠区的每一透光区的面积大于所述光线直射区的每一透光区的面积。
其中，当所述基板本体上涂覆的光阻层采用正性光阻时，所述光线重叠区的每一透光区的面积小于所述光线直射区的每一透光区的面积。
实施本发明，具有如下有益效果：
本发明提供的显示器的基板的制造方法及相应基板的光罩，通过在光罩的光线重叠区，对透光区进行补值处理，即将透光区的面积扩大或减小；从而图案化之后在衬底上交叠区域获得的曝光图案的尺寸更加接近目标曝光图案案的尺寸，从而可以获得更加准确的曝光图案，从而可以减轻或者消除镜头光线不均产生的影响，提高基板产品良率。
附图说明
为了更清楚地说明本发明或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图。
图1是本发明提供的一种显示器的基板的制造方法的一个实施例的主流程示意图；
图2是图1涉及的光罩的一个实施例的结构示意图；
图3是图1涉及的光罩的另一个实施例的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
如图1所示，示出了本发明提供的一种显示器的基板的制造方法的一个实施例的主流程示意图；在该实施例中，该方法包括如下步骤：
步骤S10，提供一基板本体；例如在一个例子中，提供的基板本体为透明玻璃基板，需要对玻璃基板进行初始清选。此处的初始清洗一般为将玻璃基板放入清洗槽中，利用化学或物理的方法将在玻璃基板表面上的灰尘或杂质去除，防止这些杂质尘粒对后续的制造造成影响；
步骤S11，在所述基板本体上涂覆光阻层，该光阻层可以采用正性光阻或负性光阻；。
步骤S12，利用曝光机多个镜头透过光罩对所述光阻层进行曝光，其中，所述光罩包括光线直射区以及光线重叠区，在所述光线重叠区中包括透光区以及非透光区，在所述光罩的光线直射区中包括透光区以及非透光区；其中，当所述基板本体上涂覆的光阻层采用负性光阻时，所述光线重叠区的每一透光区的面积均大于所述光线直射区的每一透光区的面积；在这种情形下，通过增加透光区的面积，从而可以增加透过的光照的总强度，从而获得足够的曝光区域的厚度；而在另一种情形下，即当所述基板本体上涂覆的光阻层采用正性光阻时，所述光线重叠区的每一透光区的面积小于所述光线直射区的每一透光区的面积，从而可降低透过重叠区的透过区域的光照的总强度。
步骤S13，对曝光后的所述光阻层进行显影，以获得光阻图案。
可以理解的是，所述基板为阵列基板或彩膜基板，该方法可应用于制作 阵列基板或彩膜基板的过程中。
具体地，如图2所示，示出了图1中利用的光罩的一个实施例的结构示意图。当所述基板本体上涂覆的光阻层采用负性光阻时，可采用图2示出的光罩，在该实施例中，该基板的光罩，用于利用曝光机的多个镜头对涂覆有光阻层的基板进行曝光，所述光罩1包括光线直射区10、12以及光线重叠区11，其中，一个镜头的光线覆盖区域a和区域b，另一个镜头的光线覆盖区域c和区域b，即区域a为第一个镜头的光线直射区10，区域c为第二镜头的光线直射区12；区域b为第一个镜头和第二个镜头光线均能照射到的光线重叠区11；
在所述光线重叠区11中包括透光区111以及非透光区110，在所述光罩的光线直射区10中包括透光区101以及非透光区100。所述光线重叠区的每一透光区111的面积均大于所述光线直射区的每一透光区101的面积，所述透光区101内的虚线区112的面积与所述透光区101的面积相等，即，R4＞R1＝R2＝R3。具体地，所述光线重叠区的每一透光区111的面积可完全覆盖所述光线直射区的每一透光区101的面积，所述光线重叠区的每一透光区111包括所述光线直射区的一个透光区的面积(即标号112处虚线所包含的面积)和一个补值面积(透光区111中虚线112外侧的面积)，可以理解的是，在不同的实施例中，可以选取不同的补值面积，例如可以选取所述补值面积小于所述光线直射区的透光区的面积的1/10，且其中的虚线区域仅为理解的方便，在实际光罩中并不标示该虚线区域112。
可以理解的是，由于增加了重叠区的每一透光区的面积，可以增加透过每一透光区的光照的总强度，从而获得足够的曝光区域的厚度；
具体地，如图3所示，示出了图1中利用的光罩的另一个实施例的结构示意图。当所述基板本体上涂覆的光阻层采用正性光阻时，可采用图3示出的光罩，在该实施例中，该光罩与图2中的区别在于，所述光线重叠区的每一透光区111的面积(实线所包围的区域)小于所述光线直射区的每一透光区的面积(即虚线区域112的面积)，其中，R5＜R1＝R2＝R3；可以理解的是，在不同的实施例中，可以选取不同的面积差值，例如在一个例子中，透光区111的面积可以比虚线区域112的面积小1/10，且其中的虚线区域仅为理解 的方便，在实际光罩中并不标示该虚线区域112。
可以理解的是，对于基板本体上涂覆的光阻层采用正性光阻的情形，可采用图3所示的光罩，经过图1中的步骤S13，可以理解的是，由于减少了重叠区的每一透光区的面积，可以降低透过每一透光区的光照的总强度，从而获得合适的曝光区域的厚度。
可以理解的是，在图2和图3所示出的例子中，其中透光区和曝光图案均为圆形，仅为举例；在其他的例子中，可以为其他各种图案，如矩形、椭圆形、梯形等等或上述各种图案的组合。
实施本发明实施例，具有如下有益效果：
本发明实施例提供的显示器的基板的制造方法及相应基板的光罩，通过在光罩的光线重叠区，对透光区的面积扩大或缩小，从而图案化之后在衬底上交叠区域获得的曝光图案的尺寸更加接近目标曝光图案案的尺寸，从而可以获得更加准确的曝光图案，从而可以减轻或者消除镜头光线不均产生的影响，提高基板产品良率。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (11)

  1. 一种显示器的基板的制造方法，其中，所述方法包括：
    提供一基板本体；
    在所述基板本体上涂覆光阻层；
    利用曝光机的多个镜头透过光罩对所述光阻层进行曝光，其中，所述光罩包括光线直射区以及光线重叠区，在所述光线重叠区中包括透光区以及非透光区，在所述光罩的光线直射区中包括透光区以及非透光区；其中，所述光线重叠区的每一透光区的面积均大于或小于所述光线直射区的每一透光区的面积；
    对曝光后的所述光阻层进行显影，以获得光阻图案。
  2. 如权利要求1所述的方法，其中，所述基板为阵列基板或彩膜基板。
  3. 如权利要求1所述的方法，其中，当所述基板本体上涂覆的光阻层采用负性光阻时，所述光线重叠区的每一透光区的面积大于所述光线直射区的每一透光区的面积。
  4. 如权利要求1所述的方法，其中，当所述基板本体上涂覆的光阻层采用正性光阻时，所述光线重叠区的每一透光区的面积小于所述光线直射区的每一透光区的面积。
  5. 一种光罩，用于利用曝光机的多个镜头对涂覆有光阻层的基板进行曝光，所述光罩包括光线直射区以及光线重叠区，在所述光线重叠区中包括透光区以及非透光区，在所述光罩的光线直射区中包括透光区以及非透光区；其中，所述光线重叠区的每一透光区的面积均大于或小于所述光线直射区的每一透光区的面积。
  6. 如权利要求5所述的光罩，其中，所述基板为阵列基板或彩膜基板。
  7. 如权利要求5所述的光罩，其中，当所述基板本体上涂覆的光阻层采用负性光阻时，所述光线重叠区的每一透光区的面积大于所述光线直射区的每一透光区的面积。
  8. 如权利要求5所述的光罩，其中，当所述基板本体上涂覆的光阻层采用正性光阻时，所述光线重叠区的每一透光区的面积小于所述光线直射区的每一透光区的面积。
  9. 一种光罩，用于利用曝光机的多个镜头对涂覆有光阻层的基板进行曝光，所述光罩包括光线直射区以及光线重叠区，在所述光线重叠区中包括透光区以及非透光区，在所述光罩的光线直射区中包括透光区以及非透光区；其中，所述光线重叠区的每一透光区的面积均大于或小于所述光线直射区的每一透光区的面积；
    其中，所述基板为阵列基板或彩膜基板。
  10. 如权利要求9所述的光罩，其中，当所述基板本体上涂覆的光阻层采用负性光阻时，所述光线重叠区的每一透光区的面积大于所述光线直射区的每一透光区的面积。
  11. 如权利要求9所述的光罩，其中，当所述基板本体上涂覆的光阻层采用正性光阻时，所述光线重叠区的每一透光区的面积小于所述光线直射区的每一透光区的面积。
PCT/CN2017/105851 2017-09-26 2017-10-12 一种显示器的基板的制造方法及光罩 WO2019061556A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/745,120 US10725371B2 (en) 2017-09-26 2017-10-12 Method of manufacturing a substrate of a display device and mask thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201710884143.7A CN107703714A (zh) 2017-09-26 2017-09-26 一种显示器的基板的制造方法及光罩
CN201710884143.7 2017-09-26

Publications (1)

Publication Number Publication Date
WO2019061556A1 true WO2019061556A1 (zh) 2019-04-04

Family

ID=61174937

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2017/105851 WO2019061556A1 (zh) 2017-09-26 2017-10-12 一种显示器的基板的制造方法及光罩

Country Status (3)

Country Link
US (1) US10725371B2 (zh)
CN (1) CN107703714A (zh)
WO (1) WO2019061556A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11099481B2 (en) * 2018-03-09 2021-08-24 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Mask plate, array substrate, and preparation method thereof
CN111261644B (zh) * 2020-03-10 2023-05-02 Tcl华星光电技术有限公司 阵列基板及其制备方法
CN111427232A (zh) * 2020-04-27 2020-07-17 Tcl华星光电技术有限公司 屏幕显示的精度提升方法
CN113327938B (zh) * 2021-05-28 2023-12-22 合肥维信诺科技有限公司 掩膜版、阵列基板的制作方法和显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1896874A (zh) * 2005-07-14 2007-01-17 中华映管股份有限公司 曝光工艺
CN101846888A (zh) * 2010-03-26 2010-09-29 友达光电股份有限公司 曝光机台、阵列基板、图案化薄膜、光刻胶层及形成方法
US20110223393A1 (en) * 2010-03-15 2011-09-15 Au Optronics Corporation Exposure apparatus, method of forming patterned layer, method of forming patterned photoresist layer, active device array substrate and patterned layer
CN104536258A (zh) * 2014-12-23 2015-04-22 厦门天马微电子有限公司 一种掩膜板、曝光装置、制作光敏树脂图案的方法及基板
CN107219720A (zh) * 2017-05-27 2017-09-29 厦门天马微电子有限公司 一种掩膜板、曝光装置以及膜层图案化的制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070031764A1 (en) * 2005-08-03 2007-02-08 Meng-Chi Liou Exposure process
JP2011123271A (ja) * 2009-12-10 2011-06-23 Hitachi Displays Ltd 表示装置の製造方法および表示装置
CN103235486A (zh) * 2013-01-30 2013-08-07 常州同泰光电有限公司 一种校正曝光图形的方法
CN106873304A (zh) * 2017-03-20 2017-06-20 京东方科技集团股份有限公司 形成图案的方法以及光掩模
CN107145034B (zh) * 2017-06-23 2020-11-27 武汉华星光电技术有限公司 一种半色调掩膜板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1896874A (zh) * 2005-07-14 2007-01-17 中华映管股份有限公司 曝光工艺
US20110223393A1 (en) * 2010-03-15 2011-09-15 Au Optronics Corporation Exposure apparatus, method of forming patterned layer, method of forming patterned photoresist layer, active device array substrate and patterned layer
CN101846888A (zh) * 2010-03-26 2010-09-29 友达光电股份有限公司 曝光机台、阵列基板、图案化薄膜、光刻胶层及形成方法
CN104536258A (zh) * 2014-12-23 2015-04-22 厦门天马微电子有限公司 一种掩膜板、曝光装置、制作光敏树脂图案的方法及基板
CN107219720A (zh) * 2017-05-27 2017-09-29 厦门天马微电子有限公司 一种掩膜板、曝光装置以及膜层图案化的制作方法

Also Published As

Publication number Publication date
US20190384160A1 (en) 2019-12-19
CN107703714A (zh) 2018-02-16
US10725371B2 (en) 2020-07-28

Similar Documents

Publication Publication Date Title
US7494835B2 (en) Method for manufacturing thin film transistor substrate using maskless exposing device
WO2019061556A1 (zh) 一种显示器的基板的制造方法及光罩
WO2017049878A1 (zh) 一种光刻胶图案的制作方法、彩色滤光片及显示装置
CN107086181B (zh) 薄膜晶体管及其制作方法、阵列基板和显示器
WO2019184694A1 (zh) 基板边缘处理方法、掩膜版
WO2014194634A1 (zh) 显示屏的制作方法
WO2017045238A1 (zh) 一种触控面板及其制备方法
JP2008096779A (ja) 液晶表示装置とその製造方法
US10288928B2 (en) Photomask and method of manufacturing color filter substrate
TW200302393A (en) Mask for photolithography, method of forming thin film, liquid crystal display device, and method of producing the liquid crystal display device
WO2013170608A1 (zh) 掩模板及制造阵列基板的方法
JP2005531815A (ja) マスクおよびそのマスクを使用した製造方法
WO2018223691A1 (zh) 阵列基板的制作方法、阵列基板及显示装置
WO2019214108A1 (zh) 一种显示面板的制作方法以及显示面板
US9568843B2 (en) Exposure method and exposure device
WO2017035909A1 (zh) 用于光配向的光罩及光配向方法
TW201520682A (zh) 光罩及使用該光罩之基板之製造方法
KR20050104338A (ko) 포스트 스페이서 형성 방법, 포스트 스페이서, 디스플레이,액정 셀 및 포토마스크
US9977324B2 (en) Phase shift mask and method of forming patterns using the same
WO2020073547A1 (zh) 薄膜晶体管及其制造方法
WO2019056472A1 (zh) 一种彩色滤光片基板及其制作方法
KR20150029997A (ko) 하프톤 마스크 및 이를 이용한 표시장치의 제조방법
KR101266612B1 (ko) 노광장치
JP3055415B2 (ja) 裏面露光装置、及び非線形素子基板の製造方法
KR20110114299A (ko) 위상반전마스크용 펠리클과, 이를 부착한 위상반전마스크 및 그 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17927843

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17927843

Country of ref document: EP

Kind code of ref document: A1