WO2017035909A1 - 用于光配向的光罩及光配向方法 - Google Patents

用于光配向的光罩及光配向方法 Download PDF

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Publication number
WO2017035909A1
WO2017035909A1 PCT/CN2015/091721 CN2015091721W WO2017035909A1 WO 2017035909 A1 WO2017035909 A1 WO 2017035909A1 CN 2015091721 W CN2015091721 W CN 2015091721W WO 2017035909 A1 WO2017035909 A1 WO 2017035909A1
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WIPO (PCT)
Prior art keywords
light
interface
pattern
substrate
reticle
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PCT/CN2015/091721
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English (en)
French (fr)
Inventor
韩丙
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深圳市华星光电技术有限公司
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Priority to KR1020187005878A priority Critical patent/KR102179033B1/ko
Priority to GB1802288.9A priority patent/GB2556285B/en
Priority to JP2018510120A priority patent/JP6586225B2/ja
Priority to US15/754,502 priority patent/US10345696B2/en
Publication of WO2017035909A1 publication Critical patent/WO2017035909A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/13378—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation
    • G02F1/133788—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by treatment of the surface, e.g. embossing, rubbing or light irradiation by light irradiation, e.g. linearly polarised light photo-polymerisation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/16—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling the spray area
    • B05B12/20—Masking elements, i.e. elements defining uncoated areas on an object to be coated
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Definitions

  • the present invention relates to the field of manufacturing liquid crystal displays, and more particularly to a photomask for photoalignment and a photo-alignment method.
  • LCD Liquid Crystal Display
  • the liquid crystal panel is composed of a color filter substrate (CF), a thin film transistor array substrate (TFT Array Substrate), and a liquid crystal layer (filled between the two substrates).
  • the working principle is to control the rotation of the liquid crystal molecules of the liquid crystal layer by applying a driving voltage on the CF substrate and the TFT substrate, control the output of the light, and refract the light of the backlight module to generate a picture.
  • the alignment of the alignment film is an important process, and the liquid crystal molecules are arranged in a specific direction and angle by an alignment process.
  • Frictional alignment is a physical method that produces static and particulate contamination.
  • the light alignment is a non-contact alignment technology, which uses a linearly polarized light to illuminate a light-sensitive polymer alignment film through a reticle, and forms an alignment microstructure at a certain oblique angle on the surface of the alignment film to achieve an alignment effect.
  • the size of the reticle for light alignment is generally smaller than that of the LCD TV on the market. Therefore, in actual production, multiple reticle needs to be combined to work at the same time, and the overlap area of two adjacent reticles will be Take two light.
  • a plurality of substrate units of two or more sizes are designed to be arranged on a single large substrate, commonly referred to as an MMG product, on which an alignment film is coated.
  • Different light transmission patterns are disposed on the reticle to align the substrate units of different sizes.
  • a substrate 100 coated with an alignment film the substrate 100 is provided with a plurality of substrate units, and the plurality of substrate units include a plurality of first substrates in a first row of the substrate 100 .
  • a unit 101, and a plurality of second substrate units 102 in the second row wherein the first base of the first row.
  • a conventional photomask 200 for optical alignment includes a mask body 210 and is disposed on the mask body 210 for respectively facing the first substrate unit 101 and the The first mask pattern 300 and the second mask pattern 400 are exposed by the two substrate units 102; the first mask pattern 300 and the second mask pattern 400 are arranged on the mask body 210 along the first direction DX. And separated by a certain distance;
  • the first mask pattern 300 includes a first body 310 in the middle and a first interface 320 on both sides of the first body 310;
  • the first body 310 and the first interface 320 are each composed of a plurality of first light-transmissive patterns 311 arranged in a second direction DY perpendicular to the first direction DX; wherein the number of the first bodies 310 is composed
  • the first transparent patterns 311 are highly uniform and aligned at both ends, and the heights of the plurality of first transparent patterns 311 constituting the first interface 320 are from the side close to the first body 310 toward the side away from the first body 310. Decreasing sequentially, and the upper and lower sides of the first interface 320 are symmetrically disposed;
  • the second mask pattern 400 includes a second body 410 in the middle and a second interface 420 on both sides of the second body 410;
  • the second body 410 and the second interface 420 are each composed of a plurality of second light-transmissive patterns 411 arranged in a second direction DY perpendicular to the first direction DX; wherein the number of the second bodies 410 is composed
  • the second transparent patterns 411 are highly uniform and aligned at both ends, and the heights of the plurality of second transparent patterns 411 constituting the first interface 320 are from the side closer to the second body 410 toward the side away from the second body 410.
  • the first and second sides of the second interface 420 are symmetrically arranged in descending order.
  • a plurality of masks 200 shown in FIG. 1 are generally interleaved for exposure to the substrate 100 shown in FIG. 1, and the plurality of masks 200 are interlaced and adjacent.
  • the first interface portions 320 of the first mask patterns 300 of the two masks 200 are alternately overlapped, and the second interface portions 420 of the second mask patterns 400 are alternately overlapped to obtain a combined mask 500.
  • a schematic diagram of performing optical alignment processing on the substrate 100 shown in FIG. 1 by using the combined reticle 500 shown in FIG. 3 includes the following steps:
  • Step 1 as shown in Figure 4, providing a substrate 100 coated with an alignment film, a combined reticle 500, and a light source 600;
  • the first reticle pattern 300 in the combined reticle 500 is disposed under the light source 600, the light emitted by the light source 600 passes through the first light-transmitting pattern 311;
  • the substrate 100 is aligned with the combined reticle 500;
  • Step 2 As shown in FIG. 5, the substrate 100 is gradually translated in the first direction DX until the first substrate unit 101 is located below the first mask pattern 300 of the combined mask 500, and the light source 600 The emitted light passes through the first transparent pattern 311 in the first mask pattern 300 to expose all the first substrate units 101;
  • Step 3 as shown in FIG. 6 and FIG. 7, when the substrate 100 is translated to the end of the first substrate unit 101 beyond the end of the first mask pattern 300, and the front end of the second mask pattern 400 exceeds the When the front end of the second substrate unit 102, continue to translate the substrate 100 coated with the alignment film while translating the combined reticle 500;
  • Step 4 when the combined reticle 500 is translated to the second reticle pattern 400 in the combined reticle 500 under the light source 600, the combined reticle 500 is stopped, as shown in FIG.
  • the substrate 100 is further translated in the first direction DX, and the light is transmitted through the second transparent pattern 411 to expose the second substrate unit 102 on the substrate 1 to complete all the first substrate units 101 and the second in the substrate 100. Exposure of the substrate unit 102.
  • the optical alignment method may be at the end of the first substrate unit 11 at the first interface 320 when the first mask pattern 300 and the second mask pattern 400 are switched.
  • the rear of the overlap and the front end of the second substrate unit 102 form a small unexposed or underexposed area 150 in front of the overlap of the second interface 42 so that the first substrate unit 101 is subsequently used.
  • Problems such as mura (a phenomenon in which the brightness of the liquid crystal display is uneven) are generated in the display panel produced by the second substrate unit 102.
  • the existing solution is to enlarge the distance D between the first substrate unit 101 and the second substrate unit 102 in the substrate 100, thereby switching the first mask pattern. 300 and the second reticle pattern 400, so that the end of the first substrate unit 101 is completely covered by the first reticle pattern 300, and the front end of the second substrate unit 102 is completely covered by the second reticle pattern 400, avoiding An exposed or underexposed region is formed in the first substrate unit 101 and the second substrate unit 102, thereby eliminating the mura problem, but this solution in turn causes a relationship between the first substrate unit 101 and the second substrate unit 102 on the substrate.
  • the distance is large, which is not conducive to product design and low substrate utilization.
  • Another object of the present invention is to provide a photo-alignment method capable of improving the alignment effect and avoiding the mura of the MMG product due to the presence of unexposed or underexposed regions during alignment. Problems and increase the utilization of the substrate.
  • the present invention provides a photomask for optical alignment, comprising a mask body, and a first mask pattern and a second mask pattern disposed on the mask body;
  • the reticle pattern and the second reticle pattern are arranged on the reticle body in a first direction and spaced apart by a distance;
  • the first mask pattern includes a first body in the middle and a first interface on both sides of the first body;
  • the first body and the first interface are each composed of a plurality of first light-transmissive patterns arranged in a second direction perpendicular to the first direction; wherein the plurality of first light-transmitting patterns constituting the first body
  • the heights of the plurality of first light-transmitting patterns constituting the first interface portion are sequentially decreased from a side close to the first body toward a side away from the first body; and the first body and the first interface are formed All of the first light transmissive patterns are aligned at an end adjacent to the second mask pattern;
  • the second mask pattern includes a second body in the middle and a second interface on both sides of the second body;
  • the second body and the second interface are respectively composed of a plurality of second light-transmissive patterns arranged in a second direction; wherein the plurality of second light-transmitting patterns constituting the second body are at the same height; The heights of the plurality of second light-transmissive patterns of the two interface portions are sequentially decreased from a side closer to the second body toward a side away from the second body; and all of the second light-transmitting patterns constituting the second body and the second interface portion Aligned at the end near the first mask pattern.
  • the heights of the plurality of first light-transmitting patterns constituting the first interface portion are linearly decreasing from a side close to the first body toward a side away from the first body; and a plurality of second light-transmitting portions constituting the second interface portion
  • the height of the pattern is linearly decreasing from a side closer to the second body toward a side away from the second body.
  • widths of all the first light-transmitting patterns constituting the first body and the first interface portion are uniform; the widths of all the second light-transmitting patterns constituting the second body and the second interface portion are identical.
  • the first light transmissive pattern and the second light transmissive pattern are both rectangular.
  • the first light transmissive pattern and the second light transmissive pattern are each formed by a metal layer deposited on the quartz glass by photolithography.
  • the invention also provides a photo-alignment method comprising the following steps:
  • Step 1 providing a substrate coated with an alignment film, a plurality of photomasks for light alignment, and a light source;
  • the substrate includes a plurality of first substrate units arranged in two rows along a first direction, and a plurality of second substrate units, wherein the plurality of first substrate units are in a first row on the substrate and in a first direction Arranging in a vertical second direction, the plurality of second substrate units are arranged in a second direction in a second row on the substrate;
  • the photomask for optical alignment includes a mask body and is respectively disposed on the mask body a first mask pattern and a second mask pattern for exposing the first substrate unit and the second substrate unit; the first mask pattern and the second mask pattern are on the mask body Arranged in a first direction and spaced apart by a certain distance;
  • the first mask pattern includes a first body in the middle and a first interface on both sides of the first body;
  • the first body and the first interface are respectively composed of a plurality of first light-transmissive patterns arranged in a second direction; wherein the plurality of first light-transmitting patterns constituting the first body are of the same height; The heights of the plurality of first light-transmissive patterns of an interface are successively decreased from a side close to the first body toward a side away from the first body; and all the first light-transmitting patterns constituting the first body and the first interface Aligned at the end near the second mask pattern;
  • the second mask pattern includes a second body in the middle and a second interface on both sides of the second body;
  • the second body and the second interface are respectively composed of a plurality of second light-transmissive patterns arranged in a second direction; wherein the plurality of second light-transmitting patterns constituting the second body are at the same height; The heights of the plurality of second light-transmissive patterns of the two interface portions are sequentially decreased from a side closer to the second body toward a side away from the second body; and all of the second light-transmitting patterns constituting the second body and the second interface portion Aligned at the end near the first mask pattern;
  • Step 2 interlacing the plurality of photomasks for optical alignment, so that the first interface portions of the first mask patterns of the adjacent two masks are alternately overlapped, and the second mask pattern is secondly transferred. The parts are alternately overlapped to obtain a combined mask;
  • the first mask pattern in the combined reticle is disposed under the light source, and the light emitted by the light source passes through the first light transmission pattern;
  • Step 3 The substrate is gradually translated in a first direction below the first mask pattern of the combined mask, in the process, the light emitted by the light source passes through the first light transmission pattern in the first mask pattern. Exposing all of the first substrate units;
  • Step 4 when the substrate is translated to the end of the first substrate unit beyond the end of the first mask pattern, and the front end of the second mask pattern exceeds the front end of the second substrate unit, continue to translate the entire substrate Simultaneously translating the combined reticle;
  • Step 5 when the combined reticle is translated to the second reticle pattern in the combined reticle under the light source, stopping moving the combined reticle, continuing to translate the substrate in the first direction, and the light passes through the second light transmission
  • the pattern exposes all of the second substrate units on the substrate, thereby completing exposure of all of the first substrate unit and the second substrate unit on the substrate.
  • the heights of the plurality of first light transmissive patterns constituting the first interface portion are from a proximity to the first body The side is laterally deviated from the side of the first body; the heights of the plurality of second light-transmitting patterns constituting the second interface are linearly decreasing from a side closer to the second body toward a side away from the second body.
  • widths of all the first light-transmitting patterns constituting the first body and the first interface portion are uniform; the widths of all the second light-transmitting patterns constituting the second body and the second interface portion are identical.
  • the first light transmissive pattern and the second light transmissive pattern are both rectangular; the first light transmissive pattern and the second light transmissive pattern are each formed by a metal layer that is photolithographically deposited on the quartz glass.
  • the position of the light source is always stationary.
  • the present invention also provides a photomask for optical alignment, comprising a mask body, and a first mask pattern and a second mask pattern disposed on the mask body; the first mask pattern and the first mask pattern The two mask patterns are arranged on the mask body in a first direction and spaced apart by a certain distance;
  • the first mask pattern includes a first body in the middle and a first interface on both sides of the first body;
  • the first body and the first interface are each composed of a plurality of first light-transmissive patterns arranged in a second direction perpendicular to the first direction; wherein the plurality of first light-transmitting patterns constituting the first body
  • the heights of the plurality of first light-transmitting patterns constituting the first interface portion are sequentially decreased from a side close to the first body toward a side away from the first body; and the first body and the first interface are formed All of the first light transmissive patterns are aligned at an end adjacent to the second mask pattern;
  • the second mask pattern includes a second body in the middle and a second interface on both sides of the second body;
  • the second body and the second interface are respectively composed of a plurality of second light-transmissive patterns arranged in a second direction; wherein the plurality of second light-transmitting patterns constituting the second body are at the same height; The heights of the plurality of second light-transmissive patterns of the two interface portions are sequentially decreased from a side closer to the second body toward a side away from the second body; and all of the second light-transmitting patterns constituting the second body and the second interface portion Aligned at the end near the first mask pattern;
  • the heights of the plurality of first light transmissive patterns constituting the first interface portion are linearly decreasing from a side closer to the first body toward a side away from the first body; and a plurality of second portions constituting the second interface portion
  • the height of the light transmissive pattern is linearly decreasing from a side close to the second body toward a side away from the second body;
  • widths of all the first light-transmitting patterns constituting the first body and the first interface are the same; the widths of all the second light-transmitting patterns constituting the second body and the second interface are the same;
  • the first light transmissive pattern and the second light transmissive pattern are all rectangular;
  • the first light transmissive pattern and the second light transmissive pattern are each formed by a metal layer deposited on the quartz glass by photolithography.
  • a photomask and a light alignment method for optical alignment provided by the present invention
  • the front ends of all the second light-transmitting patterns constituting the second mask pattern are aligned, so that during the optical alignment process,
  • the end of the first substrate unit and the front end of the second substrate unit do not have an unexposed or underexposed area, which solves the problem of uneven brightness of the display due to the presence of unexposed or underexposed areas in the conventional optical alignment process.
  • 1 is a schematic structural view of a conventional substrate coated with an alignment film
  • FIG. 2 is a schematic structural view of a conventional photomask for light alignment
  • FIG. 3 is a schematic structural view of a combined reticle obtained by interlacing and combining a plurality of reticle of FIG. 2;
  • Figure 5 is a schematic view of step 2 of the prior optical alignment method
  • 6-7 are schematic diagrams of step 3 of the prior optical alignment method
  • Figure 10 is a schematic structural view of a photomask for photoalignment according to the present invention.
  • Figure 11 is a schematic view showing the structure of a substrate coated with an alignment film of the present invention.
  • FIG. 12 is a schematic structural view of a combined reticle obtained by interlacing a plurality of reticle of FIG. 10;
  • Figure 13 is a schematic view showing the step 2 of the photo-alignment method of the present invention.
  • Figure 14 is a schematic view showing the step 3 of the photo-alignment method of the present invention.
  • 15-16 are schematic views of the step 4 of the photo-alignment method of the present invention.
  • 17-18 are schematic views of the step 5 of the photo-alignment method of the present invention.
  • the present invention first provides a photomask 2 for optical alignment, including a mask body 21, and a first mask pattern 3 and a second mask pattern 4 disposed on the mask body 21.
  • the first mask pattern 3 and the second mask pattern 4 are arranged on the mask body 2 in the first direction DX and spaced apart by a certain distance;
  • the first mask pattern 3 includes a first body 31 located in the middle and located at the a first interface 32 on both sides of the first body 31;
  • the first body 31 and the first interface portion 32 are each composed of a plurality of first light-transmitting patterns 313 arranged in a second direction DY perpendicular to the first direction DX; wherein the number of the first body 31 is composed
  • the first light-transmitting patterns 313 are highly uniform; the heights of the plurality of first light-transmitting patterns 313 constituting the first interface portion 32 are sequentially decreased from the side close to the first body 31 toward the side away from the first body 31; All of the first light transmissive patterns 313 constituting the first body 31 and the first interface portion 32 are aligned at an end adjacent to the second mask pattern 4;
  • the second mask pattern 4 includes a second body 41 in the middle and a second interface 42 on both sides of the second body 41;
  • the second body 41 and the second interface 42 are respectively composed of a plurality of second light-transmissive patterns 413 arranged in the second direction DY; wherein the heights of the plurality of second light-transmitting patterns 413 constituting the second body 41 are Consistent; the heights of the plurality of second light-transmitting patterns 413 constituting the second interface portion 42 are sequentially decreased from the side closer to the second body 41 toward the side away from the second body 41; and the second body 41 is composed of All of the second light transmissive patterns 413 of the second interface portion 42 are aligned at an end close to the first mask pattern 3.
  • the heights of the plurality of first light-transmitting patterns 313 constituting the first interface portion 32 are linearly decreasing from a side close to the first body 31 toward a side away from the first body 31; and the second interface portion is formed.
  • the heights of the plurality of second light-transmitting patterns 413 of 42 are linearly decreasing from the side closer to the second body 41 toward the side away from the second body 41.
  • the widths of all the first light transmissive patterns 313 constituting the first body 31 and the first interface portion 32 are identical; and all the second light transmissive patterns 413 constituting the second body 41 and the second interface portion 42 are The width is the same.
  • the first light transmissive pattern 313 and the second light transmissive pattern 413 are all rectangular.
  • the lower end of the first mask pattern of the present invention Alignment, alignment of the upper ends of the second mask pattern ensures that the end of the first substrate unit and the front end of the second substrate unit are not underexposed or caused when the first mask pattern and the second mask pattern are switched In the case of no exposure, it is advantageous to reduce the distance between the first substrate unit and the second substrate unit on the substrate, thereby improving the substrate utilization.
  • the present invention further provides a photo-alignment method, comprising the following steps:
  • Step 1 please refer to FIG. 10, FIG. 11, and FIG. 13, providing a substrate coated with an alignment film, a plurality of photomasks 2 for light alignment, and a light source 6;
  • the substrate 1 includes a plurality of first ones arranged in two rows along the first direction DX. a substrate unit 11 and a plurality of second substrate units 12, the plurality of first substrate units 11 being arranged in a first row on the substrate 1 in a second direction DY perpendicular to the first direction DX, the plurality of The second substrate unit 12 is arranged in the second direction DY in the second row on the substrate 1;
  • the photomask 2 for optical alignment includes a mask body 21, and is disposed on the mask body 21 for respectively performing the first substrate unit 11 and the second substrate unit 12.
  • the exposed first mask pattern 3 and the second mask pattern 4; the first mask pattern 3 and the second mask pattern 4 are arranged on the mask body 21 in the first direction DX with a certain interval distance;
  • the first mask pattern 3 includes a first body 31 located in the middle and a first interface 32 on both sides of the first body 31;
  • the first body 31 and the first interface 32 are each composed of a plurality of first light-transmissive patterns 313 arranged in the second direction DY; wherein the heights of the plurality of first light-transmitting patterns 313 constituting the first body 31 are Consistent; the heights of the plurality of first light-transmitting patterns 313 constituting the first interface portion 32 are sequentially decreased from the side closer to the first body 31 toward the side away from the first body 31; and the first body 31 is composed of All of the first light transmissive patterns 313 of the first interface portion 32 are aligned at an end close to the second mask pattern 4;
  • the second mask pattern 4 includes a second body 41 in the middle and a second interface 42 on both sides of the second body 41;
  • the second body 41 and the second interface 42 are respectively composed of a plurality of second light-transmissive patterns 413 arranged in the second direction DY; wherein the heights of the plurality of second light-transmitting patterns 413 constituting the second body 41 are Consistent; the heights of the plurality of second light-transmitting patterns 413 constituting the second interface portion 42 are sequentially decreased from the side closer to the second body 41 toward the side away from the second body 41; and the second body 41 is composed of All the second light transmissive patterns 413 of the second interface portion 42 are aligned at an end close to the first mask pattern 3;
  • the heights of the plurality of first light transmissive patterns 313 constituting the first interface portion 32 are from a side close to the first body 31 toward a distance from the first body 31.
  • the sides are linearly decreasing; the heights of the plurality of second light-transmitting patterns 413 constituting the second interface portion 42 are linearly decreasing from the side closer to the second body 41 toward the side away from the second body 41.
  • widths of all the first light-transmitting patterns 313 constituting the first body 31 and the first interface portion 32 are identical; and all the second light-transmitting patterns 413 constituting the second body 41 and the second interface portion 42 are The width is the same.
  • the first light transmissive pattern 313 and the second light transmissive pattern 413 are all rectangular.
  • first light transmissive pattern 313 and the second light transmissive pattern 413 are each formed by a metal layer deposited on the quartz glass by photolithography.
  • the material of the metal layer is chromium (Cr).
  • Step 2 as shown in FIG. 12, the plurality of photomasks 2 for optical alignment are interlaced, and the first interface portions 32 of the first mask patterns 3 of the adjacent two masks 2 are alternately overlapped.
  • the second interface portion 42 of the second mask pattern 4 is alternately overlapped to obtain a combined mask 5;
  • the first reticle pattern 3 of the combined reticle 5 is disposed under the light source 6, the light emitted by the light source 6 passes through the first light-transmitting pattern 313;
  • the substrate 1 is then aligned with the combined reticle 5.
  • Step 3 as shown in FIG. 14, the substrate 1 is gradually translated in the first direction DX until the first substrate unit 11 is located under the first mask pattern 3 of the combined mask 5, and the light emitted by the light source 6 Exposing all of the first substrate units 11 through the first light-transmitting patterns 313 in the first mask pattern 3;
  • Step 4 as shown in FIGS. 15 and 16, when the substrate 1 is translated to the end of the first substrate unit 11 beyond the end of the first mask pattern 3, and the front end of the second mask pattern 4 exceeds the When the front end of the second substrate unit 12 is described, the substrate 1 is continuously translated while the combined reticle 5 is translated;
  • the end portion of the first substrate unit 11 is located at a small area behind the overlap of the intersection of the first interface portion 32, and the The front end of the second substrate unit 12 is located in a small block area in front of the intersection of the intersection portion of the second interface portion 42 to cause an unexposed or underexposed problem, thereby forming a mura in the first substrate unit 11 and the second substrate unit 12.
  • all the second light transmissions constituting the second mask pattern 4 are formed because the ends of all the first light transmissive patterns 313 constituting the first mask pattern 3 are aligned.
  • the front ends of the patterns 413 are aligned such that the end of the first substrate unit 11 and the front end of the second substrate unit 12 do not have an unexposed or underexposed area during exposure, so that the first substrate unit 11 and the second The substrate unit 12 is uniformly exposed, eliminating problems such as mura.
  • Step 5 as shown in FIG. 17, when the combined reticle 5 is translated to the second reticle pattern 4 in the combined reticle 5 under the light source 6, the movement of the combined reticle 5 is stopped, as shown in FIG.
  • the substrate 1 is further translated in the first direction DX, and the light is transmitted through the second transparent pattern 22 to expose all the second substrate units 12 on the substrate 1 to complete all the first substrate units 101 on the substrate 1 and Exposure of the two substrate units 102.
  • the position of the light source 6 is always fixed.
  • the light source 6 is an ultraviolet light source.
  • the present invention provides a photomask and photo-alignment method for optical alignment, which is formed by arranging the ends of all the first light-transmitting patterns constituting the first mask pattern in the mask to form a second The front ends of all the second light transmissive patterns of the reticle pattern are aligned so that during the optical alignment process, There is no unexposed or underexposed area at the end of the first substrate unit and the front end of the second substrate unit, which solves the problem of uneven brightness of the display due to the presence of unexposed or underexposed areas in the conventional optical alignment process. At the same time, it is advantageous to reduce the distance between the first substrate unit and the second substrate unit on the substrate, thereby improving the substrate utilization rate.

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Abstract

一种用于光配向的光罩(2)及光配向方法，通过设置光罩(2)中组成第一光罩图形(3)的第一透光图案(313)的末端对齐，组成第二光罩图形(4)的第二透光图案(413)的前端对齐，使得在光配向过程中，第一基板单元(11)的末端和第二基板单元(12)的前端不存在未曝光或者曝光不足的区域，解决了传统的光配向制程中因存在未曝光或者曝光不足的区域导致的显示器亮度不均匀等问题，同时有利于缩小基板上第一基板单元(11)与第二基板单元(12)之间的距离，从而提高基板利用率。

Description

用于光配向的光罩及光配向方法 技术领域
本发明涉及液晶显示器的制作领域，尤其涉及一种用于光配向的光罩及光配向方法。
背景技术
液晶显示器(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用，如液晶电视、移动电话、个人数字助理、数字相机、计算机屏幕或笔记本电脑屏幕等。
现有的液晶显示器大部分为背光型液晶显示器，其包括壳体、设于壳体内的液晶面板及设于壳体内的背光模组。通常液晶面板由一彩色滤光片基板(Color Filter，CF)、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)以及一填充于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在CF基板和TFT基板上施加驱动电压来控制液晶层的液晶分子的旋转，控制光的输出量，将背光模组的光线折射出来产生画面。
在液晶显示面板的制作过程中，对配向膜进行配向是一项重要工艺，通过配向工艺来实现液晶分子按照特定的方向与角度排列。在TFT-LCD生产中，有两种配向方法：摩擦配向和光配向。摩擦配向为物理方法，会产生静电和颗粒的污染。光配向是一种非接触式的配向技术，利用线偏振光透过光罩照射在对光敏感的高分子聚合物配向膜上，在配向膜表面形成一定倾斜角度的配向微结构达到配向效果。
目前，用于光配向的光罩的尺寸一般小于市场上液晶电视的尺寸，因此在实际生产中，需要将多个光罩组合起来同时工作，相邻两个光罩的重叠(overlap)区域会照两次光。
为了最大限度的提高基板的利用率，设计将两种或两种以上尺寸规格的多个基板单元排列在一整块大基板上，通常称为MMG产品，在该大基板上涂覆配向膜，在光罩上设置不同的透光图案，以对不同尺寸的基板单元进行配向。
如图1所示，为一涂覆有配向膜的基板100，所述基板100上设有多个基板单元，所述多个基板单元包括在基板100的第一行内的多个第一基板单元101，及在第二行内的多个第二基板单元102，其中，第一行的第一基 板单元101与第二行的第二基板单元102之间的间距D设计的越小，基板100的利用率越高。
如图2所示，为一种现有的用于光配向的光罩200，其包括光罩本体210、及设于所述光罩本体210上分别用于对上述第一基板单元101与第二基板单元102进行曝光的第一光罩图形300与第二光罩图形400；所述第一光罩图形300与第二光罩图形400在所述光罩本体210上沿第一方向DX排列且间隔一定距离；
所述第一光罩图形300包括位于中间的第一本体310及位于所述第一本体310两侧的第一交接部320；
所述第一本体310与第一交接部320均由沿与第一方向DX相垂直的第二方向DY排列的数个第一透光图案311组成；其中，组成所述第一本体310的数个第一透光图案311高度一致且两端对齐，组成所述第一交接部320的数个第一透光图案311的高度为从靠近第一本体310一侧向远离第一本体310一侧依次递减，且所述第一交接部320的上下两侧对称设置；
所述第二光罩图形400包括位于中间的第二本体410及位于所述第二本体410两侧的第二交接部420；
所述第二本体410与第二交接部420均由沿与第一方向DX相垂直的第二方向DY排列的数个第二透光图案411组成；其中，组成所述第二本体410的数个第二透光图案411高度一致且两端对齐，组成所述第一交接部320的数个第二透光图案411的高度为从靠近第二本体410一侧向远离第二本体410一侧依次递减，且所述第二交接部420的上下两侧对称设置。
如图3所示，通常将数个图1所示的光罩200进行交错组合，以用于对图1所示的基板100进行曝光，所述数个光罩200进行交错组合后，相邻两个光罩200中的第一光罩图形300的第一交接部320交错重叠，第二光罩图形400的第二交接部420交错重叠，得到组合光罩500。
如图4-9所示，为采用图3所示的组合光罩500对图1所示的基板100进行光配向处理的示意图，该光配向方法包括以下步骤：
步骤1、如图4所示，提供涂覆有配向膜的基板100、组合光罩500、及光源600；
将所述组合光罩500中的第一光罩图形300设于光源600的下方，光源600发出的光线穿过第一透光图案311；
然后将所述基板100与组合光罩500进行对位；
步骤2、如图5所示，将所述基板100沿第一方向DX逐渐平移至所述第一基板单元101位于组合光罩500的第一光罩图形300下方，光源600 发出的光线穿过所述第一光罩图形300中的第一透光图案311对所有第一基板单元101进行曝光；
步骤3、如图6及图7所示，当基板100平移至第一基板单元101的末端超过所述第一光罩图形300的末端，且所述第二光罩图形400的前端超过所述第二基板单元102的前端时，继续平移所述涂覆有配向膜的基板100，同时平移所述组合光罩500；
步骤4、如图8所示，当所述组合光罩500平移至组合光罩500中的第二光罩图形400位于光源600的下方时，停止移动组合光罩500，如图9所示，继续沿第一方向DX平移所述基板100，光线透过第二透光图案411对基板1上的第二基板单元102进行曝光，从而完成对基板100中的所有第一基板单元101与第二基板单元102的曝光。
如图7所示，上述光配向方法，在进行第一光罩图形300与第二光罩图形400的切换时，往往会在所述第一基板单元11的末端于所述第一交接部320重叠处的后方、以及所述第二基板单元102的前端于所述第二交接部42重叠处的前方形成一小块未曝光或者曝光不足的区域150，从而使后续采用第一基板单元101与第二基板单元102生产的显示面板中产生mura(液晶显示器亮度不均匀的现象)等问题。
基于上述曝光过程中出现的技术问题，现有的解决方案是将所述基板100中的第一基板单元101与第二基板单元102之间的距离D拉大，从而在切换第一光罩图形300与第二光罩图形400时，使得第一基板单元101的末端完全被第一光罩图形300遮盖，所述第二基板单元102的前端完全被第二光罩图形400遮盖，避免了在第一基板单元101和第二基板单元102中形成曝光或曝光不足的区域，从而消除了mura问题，但是这种解决方案又会使基板上第一基板单元101与第二基板单元102之间的距离拉大，造成不利于产品设计、及基板利用率低的问题。
因此，亟需一种新的解决方案，以解决现有的光配向制程造成的基板单元的mura问题和基板利用率低的问题。
发明内容
本发明的目的在于提供一种用于光配向的光罩，能够改善配向效果，避免MMG产品在配向时由于存在未曝光或者曝光不足的区域而导致的mura问题，并提高基板的利用率。
本发明的另一目的在于提供一种光配向方法，能够改善配向效果，避免MMG产品在配向时由于存在未曝光或者曝光不足的区域而导致的mura 问题，并提高基板的利用率。
为实现上述目的，本发明提供了一种用于光配向的光罩，包括光罩本体、及设于所述光罩本体上的第一光罩图形与第二光罩图形；所述第一光罩图形与第二光罩图形在所述光罩本体上沿第一方向排列且间隔一定距离；
所述第一光罩图形包括位于中间的第一本体及位于所述第一本体两侧的第一交接部；
所述第一本体与第一交接部均由沿与第一方向相垂直的第二方向排列的数个第一透光图案组成；其中，组成所述第一本体的数个第一透光图案高度一致；组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧依次递减；并且组成所述第一本体与第一交接部的所有第一透光图案在靠近第二光罩图形的一端对齐；
所述第二光罩图形包括位于中间的第二本体及位于所述第二本体两侧的第二交接部；
所述第二本体与第二交接部均由沿第二方向排列的数个第二透光图案组成；其中，组成所述第二本体的数个第二透光图案高度一致；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧依次递减；并且组成所述第二本体与第二交接部的所有第二透光图案在靠近第一光罩图形的一端对齐。
组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧呈线性递减；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧呈线性递减。
组成所述第一本体与第一交接部的所有第一透光图案的宽度一致；组成所述第二本体与第二交接部的所有第二透光图案的宽度一致。
所述第一透光图案、第二透光图案均为长方形。
所述第一透光图案、第二透光图案均通过光刻沉积于石英玻璃上的金属层形成。
本发明还提供一种光配向方法，包括如下步骤：
步骤1、提供涂覆有配向膜的基板、多个用于光配向的光罩、及光源；
所述基板包括沿第一方向排列成两行的多个第一基板单元、及多个第二基板单元，所述多个第一基板单元在基板上的第一行内沿与第一方向相垂直的第二方向排列，所述多个第二基板单元在基板上的第二行内沿第二方向排列；
所述用于光配向的光罩包括光罩本体、及设于所述光罩本体上分别用 于对所述第一基板单元与第二基板单元进行曝光的第一光罩图形、及第二光罩图形；所述第一光罩图形、及第二光罩图形在所述光罩本体上沿第一方向排列且间隔一定距离；
所述第一光罩图形包括位于中间的第一本体及位于所述第一本体两侧的第一交接部；
所述第一本体与第一交接部均由沿第二方向排列的数个第一透光图案组成；其中，组成所述第一本体的数个第一透光图案高度一致；组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧依次递减；并且组成所述第一本体与第一交接部的所有第一透光图案在靠近第二光罩图形的一端对齐；
所述第二光罩图形包括位于中间的第二本体及位于所述第二本体两侧的第二交接部；
所述第二本体与第二交接部均由沿第二方向排列的数个第二透光图案组成；其中，组成所述第二本体的数个第二透光图案高度一致；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧依次递减；并且组成所述第二本体与第二交接部的所有第二透光图案在靠近第一光罩图形的一端对齐；
步骤2、将所述多个用于光配向的光罩进行交错组合，使相邻两个光罩中的第一光罩图形的第一交接部交错重叠，第二光罩图形的第二交接部交错重叠，得到组合光罩；
将所述组合光罩中的第一光罩图形设于光源的下方，光源发出的光线穿过第一透光图案；
然后将所述基板与组合光罩进行对位；
步骤3、将所述基板沿第一方向逐渐平移至组合光罩的第一光罩图形下方，在该过程中，光源发出的光线穿过所述第一光罩图形中的第一透光图案对所有第一基板单元进行曝光；
步骤4、当基板平移至第一基板单元的末端超过所述第一光罩图形的末端，且所述第二光罩图形的前端超过所述第二基板单元的前端时，继续平移整块基板，同时平移所述组合光罩；
步骤5、当所述组合光罩平移至组合光罩中的第二光罩图形位于光源的下方时，停止移动组合光罩，继续沿第一方向平移所述基板，光线透过第二透光图案对基板上的所有第二基板单元进行曝光，从而完成对基板上的所有第一基板单元与第二基板单元的曝光。
组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一 侧向远离第一本体一侧呈线性递减；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧呈线性递减。
组成所述第一本体与第一交接部的所有第一透光图案的宽度一致；组成所述第二本体与第二交接部的所有第二透光图案的宽度一致。
所述第一透光图案、第二透光图案均为长方形；所述第一透光图案、第二透光图案均通过光刻沉积于石英玻璃上的金属层形成。
在所述光配向过程中，所述光源的位置始终固定不动。
本发明还提供一种用于光配向的光罩，包括光罩本体、及设于所述光罩本体上的第一光罩图形与第二光罩图形；所述第一光罩图形与第二光罩图形在所述光罩本体上沿第一方向排列且间隔一定距离；
所述第一光罩图形包括位于中间的第一本体及位于所述第一本体两侧的第一交接部；
所述第一本体与第一交接部均由沿与第一方向相垂直的第二方向排列的数个第一透光图案组成；其中，组成所述第一本体的数个第一透光图案高度一致；组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧依次递减；并且组成所述第一本体与第一交接部的所有第一透光图案在靠近第二光罩图形的一端对齐；
所述第二光罩图形包括位于中间的第二本体及位于所述第二本体两侧的第二交接部；
所述第二本体与第二交接部均由沿第二方向排列的数个第二透光图案组成；其中，组成所述第二本体的数个第二透光图案高度一致；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧依次递减；并且组成所述第二本体与第二交接部的所有第二透光图案在靠近第一光罩图形的一端对齐；
其中，组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧呈线性递减；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧呈线性递减；
其中，组成所述第一本体与第一交接部的所有第一透光图案的宽度一致；组成所述第二本体与第二交接部的所有第二透光图案的宽度一致；
其中，所述第一透光图案、第二透光图案均为长方形；
其中，所述第一透光图案、第二透光图案均通过光刻沉积于石英玻璃上的金属层形成。
本发明的有益效果：本发明提供的一种用于光配向的光罩及光配向方 法，通过设置所述光罩中组成第一光罩图形的所有第一透光图案的末端对齐，组成第二光罩图形的所有第二透光图案的前端对齐，使得在光配向过程中，所述第一基板单元的末端和第二基板单元的前端不存在未曝光或者曝光不足的区域，解决了传统的光配向制程中因存在未曝光或者曝光不足的区域导致的显示器亮度不均匀等问题，同时有利于缩小基板上第一基板单元与第二基板单元之间的距离，从而提高基板利用率。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的涂覆有配向膜的基板的结构示意图；
图2为现有的用于光配向的光罩的结构示意图；
图3为数个图2的光罩交错组合后得到的组合光罩的结构示意图；
图4为现有的光配向方法的步骤1的示意图；
图5为现有的光配向方法的步骤2的示意图；
图6-7为现有的光配向方法的步骤3的示意图；
图8-9为现有的光配向方法的步骤4的示意图；
图10为本发明的用于光配向的光罩的结构示意图；
图11为本发明的涂覆有配向膜的基板的结构示意图；
图12为数个图10的光罩交错组合后得到的组合光罩的结构示意图；
图13为本发明的光配向方法的步骤2的示意图；
图14为本发明的光配向方法的步骤3的示意图；
图15-16为本发明的光配向方法的步骤4的示意图；
图17-18为本发明的光配向方法的步骤5的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图10，本发明首先提供一种用于光配向的光罩2，包括光罩本体21、及设于所述光罩本体21上的第一光罩图形3与第二光罩图形4；所述第一光罩图形3与第二光罩图形4在所述光罩本体2上沿第一方向DX排列且间隔一定距离；
具体的，所述第一光罩图形3包括位于中间的第一本体31及位于所述 第一本体31两侧的第一交接部32；
所述第一本体31与第一交接部32均由沿与第一方向DX相垂直的第二方向DY排列的数个第一透光图案313组成；其中，组成所述第一本体31的数个第一透光图案313高度一致；组成所述第一交接部32的数个第一透光图案313的高度为从靠近第一本体31一侧向远离第一本体31一侧依次递减；并且组成所述第一本体31与第一交接部32的所有第一透光图案313在靠近第二光罩图形4的一端对齐；
具体的，所述第二光罩图形4包括位于中间的第二本体41及位于所述第二本体41两侧的第二交接部42；
所述第二本体41与第二交接部42均由沿第二方向DY排列的数个第二透光图案413组成；其中，组成所述第二本体41的数个第二透光图案413高度一致；组成所述第二交接部42的数个第二透光图案413的高度为从靠近第二本体41一侧向远离第二本体41一侧依次递减；并且组成所述第二本体41与第二交接部42的所有第二透光图案413在靠近第一光罩图形3的一端对齐。
具体的，组成所述第一交接部32的数个第一透光图案313的高度为从靠近第一本体31一侧向远离第一本体31一侧呈线性递减；组成所述第二交接部42的数个第二透光图案413的高度为从靠近第二本体41一侧向远离第二本体41一侧呈线性递减。
具体的，组成所述第一本体31与第一交接部32的所有第一透光图案313的宽度一致；组成所述第二本体41与第二交接部42的所有第二透光图案413的宽度一致。
具体的，所述第一透光图案313、第二透光图案413均为长方形。
将多个本发明的用于光配向的光罩2进行组合后，采用得到的组合光罩对一基板上的两种基板单元进行光配向处理时，由于本发明的第一光罩图形的下端对齐，第二光罩图形的上端对齐，可保证在进行第一光罩图形与第二光罩图形的切换时，不会造成第一基板单元的末端与第二基板单元的前端出现曝光不足或未曝光的情况，有利于缩小基板上第一基板单元与第二基板单元的距离，从而提高基板利用率。
基于上述用于光配向的光罩，请参阅图10-18，本发明还提供一种光配向方法，包括如下步骤：
步骤1、请参阅图10、图11、及图13，提供涂覆有配向膜的基板1、多个用于光配向的光罩2、及光源6；
如图11所示，所述基板1包括沿第一方向DX排列成两行的多个第一 基板单元11、及多个第二基板单元12，所述多个第一基板单元11在基板1上的第一行内沿与第一方向DX相垂直的第二方向DY排列，所述多个第二基板单元12在基板1上的第二行内沿第二方向DY排列；
如图10所示，所述用于光配向的光罩2包括光罩本体21、及设于所述光罩本体21上分别用于对所述第一基板单元11与第二基板单元12进行曝光的第一光罩图形3、及第二光罩图形4；所述第一光罩图形3、及第二光罩图形4在所述光罩本体21上沿第一方向DX排列且间隔一定距离；
具体的，所述第一光罩图形3包括位于中间的第一本体31及位于所述第一本体31两侧的第一交接部32；
所述第一本体31与第一交接部32均由沿第二方向DY排列的数个第一透光图案313组成；其中，组成所述第一本体31的数个第一透光图案313高度一致；组成所述第一交接部32的数个第一透光图案313的高度为从靠近第一本体31一侧向远离第一本体31一侧依次递减；并且组成所述第一本体31与第一交接部32的所有第一透光图案313在靠近第二光罩图形4的一端对齐；
所述第二光罩图形4包括位于中间的第二本体41及位于所述第二本体41两侧的第二交接部42；
所述第二本体41与第二交接部42均由沿第二方向DY排列的数个第二透光图案413组成；其中，组成所述第二本体41的数个第二透光图案413高度一致；组成所述第二交接部42的数个第二透光图案413的高度为从靠近第二本体41一侧向远离第二本体41一侧依次递减；并且组成所述第二本体41与第二交接部42的所有第二透光图案413在靠近第一光罩图形3的一端对齐；
具体的，所述用于光配向的光罩2中，组成所述第一交接部32的数个第一透光图案313的高度为从靠近第一本体31一侧向远离第一本体31一侧呈线性递减；组成所述第二交接部42的数个第二透光图案413的高度为从靠近第二本体41一侧向远离第二本体41一侧呈线性递减。
进一步的，组成所述第一本体31与第一交接部32的所有第一透光图案313的宽度一致；组成所述第二本体41与第二交接部42的所有第二透光图案413的宽度一致。
优选的，所述第一透光图案313、第二透光图案413均为长方形。
进一步地，所述第一透光图案313、第二透光图案413均通过光刻沉积于石英玻璃上的金属层形成。
优选的，所述金属层的材料为铬(Cr)。
步骤2、如图12所示，将所述多个用于光配向的光罩2进行交错组合，使相邻两个光罩2中的第一光罩图形3的第一交接部32交错重叠，第二光罩图形4的第二交接部42交错重叠，得到组合光罩5；
如图13所示，将所述组合光罩5中的第一光罩图形3设于光源6的下方，光源6发出的光线穿过第一透光图案313；
然后将所述基板1与组合光罩5进行对位。
步骤3、如图14所示，将所述基板1沿第一方向DX逐渐平移至所述第一基板单元11位于组合光罩5的第一光罩图形3下方，所述光源6发出的光线穿过所述第一光罩图形3中的第一透光图案313对所有第一基板单元11进行曝光；
步骤4、如图15、16所示，当所述基板1平移至第一基板单元11的末端超过所述第一光罩图形3的末端，且所述第二光罩图形4的前端超过所述第二基板单元12的前端时，继续平移所述基板1，同时平移所述组合光罩5；
现有的用于光配向的光罩，在上述步骤3中，往往会在所述第一基板单元11的末端位于所述第一交接部32交接部重叠处后方的小块区域、以及所述第二基板单元12的前端位于所述第二交接部42交接部重叠处前方的小块区域中造成未曝光或曝光不足的问题，从而在第一基板单元11与第二基板单元12中形成mura，而本发明的用于光配向的光罩，由于组成所述第一光罩图形3的所有第一透光图案313的末端对齐，组成所述第二光罩图形4的所有第二透光图案413的前端对齐，使得在曝光过程中，所述第一基板单元11的末端和第二基板单元12的前端不存在不能曝光或者曝光不足的区域，使得所述第一基板单元11与第二基板单元12被均匀曝光，消除了mura等问题。
步骤5、如图17所示，当所述组合光罩5平移至组合光罩5中的第二光罩图形4位于光源6的下方时，停止移动组合光罩5，如图18所示，继续沿第一方向DX平移所述基板1，光线透过第二透光图案22对基板1上的所有第二基板单元12进行曝光，从而完成对基板1上的所有第一基板单元101与第二基板单元102的曝光。
具体的，上述光配向方法中，光源6的位置始终固定不动。
优选的，所述光源6为紫外线光源。
综上所述，本发明提供的一种用于光配向的光罩及光配向方法，通过设置所述光罩中组成第一光罩图形的所有第一透光图案的末端对齐，组成第二光罩图形的所有第二透光图案的前端对齐，使得在光配向过程中，所 述第一基板单元的末端和第二基板单元的前端不存在未曝光或者曝光不足的区域，解决了传统的光配向制程中因存在未曝光或者曝光不足的区域导致的显示器亮度不均匀等问题，同时有利于缩小基板上第一基板单元与第二基板单元之间的距离，从而提高基板利用率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种用于光配向的光罩，包括光罩本体、及设于所述光罩本体上的第一光罩图形与第二光罩图形；所述第一光罩图形与第二光罩图形在所述光罩本体上沿第一方向排列且间隔一定距离；
    所述第一光罩图形包括位于中间的第一本体及位于所述第一本体两侧的第一交接部；
    所述第一本体与第一交接部均由沿与第一方向相垂直的第二方向排列的数个第一透光图案组成；其中，组成所述第一本体的数个第一透光图案高度一致；组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧依次递减；并且组成所述第一本体与第一交接部的所有第一透光图案在靠近第二光罩图形的一端对齐；
    所述第二光罩图形包括位于中间的第二本体及位于所述第二本体两侧的第二交接部；
    所述第二本体与第二交接部均由沿第二方向排列的数个第二透光图案组成；其中，组成所述第二本体的数个第二透光图案高度一致；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧依次递减；并且组成所述第二本体与第二交接部的所有第二透光图案在靠近第一光罩图形的一端对齐。
  2. 如权利要求1所述的用于光配向的光罩，其中，组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧呈线性递减；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧呈线性递减。
  3. 如权利要求1所述的用于光配向的光罩，其中，组成所述第一本体与第一交接部的所有第一透光图案的宽度一致；组成所述第二本体与第二交接部的所有第二透光图案的宽度一致。
  4. 如权利要求1所述的用于光配向的光罩，其中，所述第一透光图案、第二透光图案均为长方形。
  5. 如权利要求1所述的用于光配向的光罩，其中，所述第一透光图案、第二透光图案均通过光刻沉积于石英玻璃上的金属层形成。
  6. 一种光配向方法，包括如下步骤：
    步骤1、提供涂覆有配向膜的基板、多个用于光配向的光罩、及光源；
    所述基板包括沿第一方向排列成两行的多个第一基板单元、及多个第 二基板单元，所述多个第一基板单元在基板上的第一行内沿与第一方向相垂直的第二方向排列，所述多个第二基板单元在基板上的第二行内沿第二方向排列；
    所述用于光配向的光罩包括光罩本体、设于所述光罩本体上分别用于对所述第一基板单元与第二基板单元进行曝光的第一光罩图形、及第二光罩图形；所述第一光罩图形、及第二光罩图形在所述光罩本体上沿第一方向排列且间隔一定距离；
    所述第一光罩图形包括位于中间的第一本体及位于所述第一本体两侧的第一交接部；
    所述第一本体与第一交接部均由沿第二方向排列的数个第一透光图案组成；其中，组成所述第一本体的数个第一透光图案高度一致；组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧依次递减；并且组成所述第一本体与第一交接部的所有第一透光图案在靠近第二光罩图形的一端对齐；
    所述第二光罩图形包括位于中间的第二本体及位于所述第二本体两侧的第二交接部；
    所述第二本体与第二交接部均由沿第二方向排列的数个第二透光图案组成；其中，组成所述第二本体的数个第二透光图案高度一致；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧依次递减；并且组成所述第二本体与第二交接部的所有第二透光图案在靠近第一光罩图形的一端对齐；
    步骤2、将所述多个用于光配向的光罩进行交错组合，使相邻两个光罩中的第一光罩图形的第一交接部交错重叠，第二光罩图形的第二交接部交错重叠，得到组合光罩；
    将所述组合光罩中的第一光罩图形设于光源的下方，光源发出的光线穿过第一透光图案；
    然后将所述基板与组合光罩进行对位；
    步骤3、将所述基板沿第一方向逐渐平移至所述第一基板单元位于组合光罩的第一光罩图形下方，光源发出的光线穿过所述第一光罩图形中的第一透光图案对所有第一基板单元进行曝光；
    步骤4、当所述基板平移至第一基板单元的末端超过所述第一光罩图形的末端，且所述第二光罩图形的前端超过所述第二基板单元的前端时，继续平移所述基板，同时平移所述组合光罩；
    步骤5、当所述组合光罩平移至组合光罩中的第二光罩图形位于光源的 下方时，停止移动组合光罩，继续沿第一方向平移所述基板，光线透过第二透光图案对基板上的所有第二基板单元进行曝光，从而完成对基板上的所有第一基板单元与第二基板单元的曝光。
  7. 如权利要求6所述的光配向方法，其中，组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧呈线性递减；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧呈线性递减。
  8. 如权利要求6所述的光配向方法，其中，组成所述第一本体与第一交接部的所有第一透光图案的宽度一致；组成所述第二本体与第二交接部的所有第二透光图案的宽度一致。
  9. 如权利要求6所述的光配向方法，其中，所述第一透光图案、第二透光图案均为长方形；所述第一透光图案、第二透光图案均通过光刻沉积于石英玻璃上的金属层形成。
  10. 如权利要求6所述的光配向方法，其中，在所述光配向过程中，所述光源的位置始终固定不动。
  11. 一种用于光配向的光罩，包括光罩本体、及设于所述光罩本体上的第一光罩图形与第二光罩图形；所述第一光罩图形与第二光罩图形在所述光罩本体上沿第一方向排列且间隔一定距离；
    所述第一光罩图形包括位于中间的第一本体及位于所述第一本体两侧的第一交接部；
    所述第一本体与第一交接部均由沿与第一方向相垂直的第二方向排列的数个第一透光图案组成；其中，组成所述第一本体的数个第一透光图案高度一致；组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧依次递减；并且组成所述第一本体与第一交接部的所有第一透光图案在靠近第二光罩图形的一端对齐；
    所述第二光罩图形包括位于中间的第二本体及位于所述第二本体两侧的第二交接部；
    所述第二本体与第二交接部均由沿第二方向排列的数个第二透光图案组成；其中，组成所述第二本体的数个第二透光图案高度一致；组成所述第二交接部的数个第二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧依次递减；并且组成所述第二本体与第二交接部的所有第二透光图案在靠近第一光罩图形的一端对齐；
    其中，组成所述第一交接部的数个第一透光图案的高度为从靠近第一本体一侧向远离第一本体一侧呈线性递减；组成所述第二交接部的数个第 二透光图案的高度为从靠近第二本体一侧向远离第二本体一侧呈线性递减；
    其中，组成所述第一本体与第一交接部的所有第一透光图案的宽度一致；组成所述第二本体与第二交接部的所有第二透光图案的宽度一致；
    其中，所述第一透光图案、第二透光图案均为长方形；
    其中，所述第一透光图案、第二透光图案均通过光刻沉积于石英玻璃上的金属层形成。
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